2n4416, 2n4416a, sst4416 Vishay

2N4416/2N4416A/SST4416
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4416 2N4416A SST4416
VGS(off) (V)
v6 2.5 to 6 v6
V(BR)GSS Min (V)

30 35 30
gfs Min (mS)

4.5 4.5 4.5
IDSS Min (mA)

5 5 5
FEATURES
D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High AC/DC Switch Off-Isolation
BENEFITS
D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification
APPLICATIONS
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches
DESCRIPTION
The 2N4416/2N4416A/SST4416 n-channel JFETs are designed to provide high-performance amplification at high frequencies. The TO-206AF (TO-72) hermetically-sealed package is available with full military processing (see Military Information.) The TO-236 (SOT-23) package provides a low-cost option and is available with tape-and-reel options (see Packaging Information). For similar products in the TO-226AA (TO-92) package, see the J304/305 data sheet.
TO-206AF (TO-72) TO-236 (SOT-23)

S 1 4 C D 1 3 S 2 D Top View 2N4416 2N4416A 3 G 2 G
Top View SST4416 (H1)* *Marking Code for TO-236
For applications information see AN104. Document Number: 70242 S-50147Rev. H, 24-Jan-05 www.vishay.com
2N4416/2N4416A/SST4416
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage : (2N/SST4416) . . . . . . . . . . . . . . . . . . . . . 30 V (2N4416A) . . . . . . . . . . . . . . . . . . . . . . . . . 35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . 65 to 200 _C (SST Prefix) . . . . . . . . . . . . . . . . . 65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150 _C Power Dissipation : (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW (SST Prefix)b . . . . . . . . . . . . . . . . . . . . 350 mW
Notes a. Derate 2.4 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TA = 25_C UNLESS NOTED)

Limits
2N4416 2N4416A SST4416
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS
IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 1 nA VDS = 15 V, VGS = 0 V VGS = 20 V, VDS = 0 V (2N) TA = 150_C VGS = 15 V, VDS = 0 V (SST) TA = 125_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = 6 V VGS = 0 V, ID = 300 mA IG = 1 mA , VDS = 0 V
36 3 10 2 4 0.002 0.6 20 2 150 0.7
30 6 5 15 100 100
35 2.5 5 6 15 100 100
30 6 5 15
V mA pA 1 nA
Gate Reverse Current
IGSS
Gate Operating Current Drain Cutoff Currentc Drain-Source On-Resistancec Gate-Source Forward Voltagec
IG ID(off) rDS(on) VGS(F)
pA W V
Dynamic
Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 10 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V f = 1 kHz 6 15 2.2 0.7 1 6 4.5 7.5 50 4 0.8 2 4.5 7.5 50 4 0.8 2 nV Hz pF 4.5 7.5 50 mS mS
www.vishay.com
Document Number: 70242 S-50147Rev. H, 24-Jan-05
2N4416/2N4416A/SST4416
Vishay Siliconix
HIGH-FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (TA = 25_C UNLESS NOTED)
Limits
100 MHz 400 MHz
Parameter
Common Source Input Conductanced Common Source Input Susceptanced Common Source Output Conductanced Common Source Output Susceptanced Common Source Forward Transconductanced Common-Source Power Gaind Noise Figured
Symbol
giss biss goss boss gfs Gps NF
Test Conditions
Min
Max
100 2,500
Min
Max
1,000 10,000 100 4,000
Unit
VDS = 15 V, VGS = 0 V
75 1,000 4,000
mS
VDS = 15 V, ID = 5 mA RG = 1 kW
18 2
10 4
dB NH
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. d. Not a production test.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
20 IDSS Saturation Drain Current (mA)
10 rDS(on) Drain-Source On-Resistance ( ) gfs Forward Transconductance (mS)
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage

500 gos @ VDS = 10 V, VGS = 0 V f = 1 kHz
100
rDS @ ID = 300 mA, VGS = 0 V

80 gos Output conductance (S)
16
IDSS
400
12
gfs
300
rDS gos
60
200
40
IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 2 4 6 8 VGS(off) Gate-Source Cutoff Voltage (V) 10
100
20
0 0 4 6 8 VGS(off) Gate-Source Cutoff Voltage (V) 2 10
Output Characteristics
10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) VGS = 0 V 6 0.2 V 0.4 V 4 0.6 V 0.8 V 2 1.0 V 1.2 V 1.4 V 2 4 6 8 VDS Drain-Source Voltage (V) 12 15
VGS(off) = 3 V
VGS = 0 V 9 0.3 V 0.6 V 6 0.9 V 1.2 V 3 1.5 V 1.8 V
10
4 6 8 VDS Drain-Source Voltage (V)
10
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2N4416/2N4416A/SST4416
Vishay Siliconix
5
VGS(off) = 2 V
VGS(off) = 3 V VGS = 0 V
4 ID Drain Current (mA)
VGS = 0 V 0.2 V ID Drain Current (mA) 0.4 V 0.6 V
0.3 V 0.6 V 0.9 V 1.2 V 1.5 V
0.8 V 1.0 V
2 1.8 V 1 2.1 V
1.2 V 1.4 V
0 0 0.2 0.4 0.6 0.8 1.0 VDS Drain-Source Voltage (V)
0 0 0.2 0.4 0.6 0.8 1.0 VDS Drain-Source Voltage (V)
Transfer Characteristics
10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) TA = 55_C 6 25_C VDS = 10 V 8 10
Transfer Characteristics
VGS(off) = 3 V VDS = 10 V
TA = 55_C 6 25_C
125_C
125_C
0 0 0.4 0.8 1.2 1.6 2 VGS Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage

10 VGS(off) = 2 V gfs Forward Transconductance (mS) 8 TA = 55_C 6 25_C VDS = 10 V f = 1 kHz gfs Forward Transconductance (mS) 8 10
Transconductance vs. Gate-Source Voltgage

VGS(off) = 3 V VDS = 10 V f = 1 kHz
TA = 55_C 6 25_C
125_C
125_C
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2N4416/2N4416A/SST4416
Vishay Siliconix
On-Resistance vs. Drain Current

300 rDS(on) Drain-Source On-Resistance ( ) TA = 25_C 240 AV Voltage Gain VGS(off) = 2 V 180 3 V 120 80 100
Circuit Voltage Gain vs. Drain Current

g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 10 V ID
60
40
VGS(off) = 2 V
60
20 3 V
0 0.1
ID Drain Current (mA) 1
10
0.1
ID Drain Current (mA) 1
10
Common-Source Input Capacitance vs. Gate-Source Voltage

5 Crss Reverse Feedback Capacitance (pF) f = 1 MHz 4 Ciss Input Capacitance (pF) 3
Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage

f = 1 MHz 2.4
3 VDS = 0 V 2 10 V
1.8 VDS = 0 V
1.2
0.6
10 V
0 0 4 8 12 16 VGS Gate-Source Voltage (V) 20
0 0 4 8 12 16 VGS Gate-Source Voltage (V) 20
100
Input Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source bis
100
Forward Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source
10 (mS)
gis (mS)
10
gfs bfs
0.1 100
200
500
1000
0.1 100
200
500
1000
f Frequency (MHz)
f Frequency (MHz)
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2N4416/2N4416A/SST4416
Vishay Siliconix
Reverse Admittance
10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 1 (mS) (mS) brs 10
Output Admittance
bos
1 gos
grs 0.1 0.1 TA = 25_C VDS = 15 V VGS = 0 V Common Source 0.01 100 0.01 200 500 f Frequency (MHz) 1000 100 200 500 f Frequency (MHz) 1000
100 nA 10 nA 1 nA 100 pA
Gate Leakage Current

IG @ ID = 5 mA 1 mA 0.1 mA gfs Forward Transconductance (mS)
10
Common-Source Forward Transconductance vs. Drain Current

8 TA = 55_C
IG Gate Leakage
TA = 125_C IGSS @ 125_C 1 mA TA = 25_C 0.1 mA IGSS @ 25_C
6 25_C 4
5 mA 10 pA 1 pA 0.1 pA 0 4
125_C 2
0 8 12 16 VDG Drain-Gate Voltage (V) 20 0.1 1 ID Drain Current (mA) 10
20
Equivalent Input Noise Voltage vs. Frequency

VDS = 10 V
20
Output Conductance vs. Drain Current

16 Hz
gos Output Conductance (S)
16 TA = 55_C 12 25_C 125_C 4
en Noise Voltage nV /
12
8 ID = 5 mA VGS = 0 V 0 10 100 1k f Frequency (Hz) 10 k 100 k
0 0.1 1 ID Drain Current (mA) 10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70242. www.vishay.com Document Number: 70242 S-50147Rev. H, 24-Jan-05
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2N4416/2N4416A/SST4416

V(BR)GSS Min (V)

gfs Min (mS)

IDSS Min (mA)

TO-206AF (TO-72) TO-236 (SOT-23)

Top View SST4416 (H1)* *Marking Code for TO-236

SPECIFICATIONS (TA = 25_C UNLESS NOTED)

V(BR)GSS VGS(off) IDSS

36 3 10 2 4 0.002 0.6 20 2 150 0.7

35 2.5 5 6 15 100 100

Gate Reverse Current

IG ID(off) rDS(on) VGS(F)

Document Number: 70242 S-50147Rev. H, 24-Jan-05

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

10 rDS(on) Drain-Source On-Resistance ( ) gfs Forward Transconductance (mS)

On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage

rDS @ ID = 300 mA, VGS = 0 V

0 0 4 6 8 VGS(off) Gate-Source Cutoff Voltage (V) 2 10

VGS = 0 V 9 0.3 V 0.6 V 6 0.9 V 1.2 V 3 1.5 V 1.8 V

4 6 8 VDS Drain-Source Voltage (V)

Document Number: 70242 S-50147Rev. H, 24-Jan-05

4 ID Drain Current (mA)

VGS = 0 V 0.2 V ID Drain Current (mA) 0.4 V 0.6 V

0.3 V 0.6 V 0.9 V 1.2 V 1.5 V

0 0 0.2 0.4 0.6 0.8 1.0 VDS Drain-Source Voltage (V)

0 0 0.2 0.4 0.6 0.8 1.0 VDS Drain-Source Voltage (V)

0 0 0.4 0.8 1.2 1.6 2 VGS Gate-Source Voltage (V)

0 0 0.6 1.2 1.8 2.4 3 VGS Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltage

Transconductance vs. Gate-Source Voltgage

0 0 0.4 0.8 1.2 1.6 2 VGS Gate-Source Voltage (V)

0 0 0.6 1.2 1.8 2.4 3 VGS Gate-Source Voltage (V)

Document Number: 70242 S-50147Rev. H, 24-Jan-05

On-Resistance vs. Drain Current

Circuit Voltage Gain vs. Drain Current

ID Drain Current (mA) 1

ID Drain Current (mA) 1

Common-Source Input Capacitance vs. Gate-Source Voltage

Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage

0 0 4 8 12 16 VGS Gate-Source Voltage (V) 20

0 0 4 8 12 16 VGS Gate-Source Voltage (V) 20

Document Number: 70242 S-50147Rev. H, 24-Jan-05

Gate Leakage Current

Common-Source Forward Transconductance vs. Drain Current

TA = 125_C IGSS @ 125_C 1 mA TA = 25_C 0.1 mA IGSS @ 25_C

0 8 12 16 VDG Drain-Gate Voltage (V) 20 0.1 1 ID Drain Current (mA) 10

Equivalent Input Noise Voltage vs. Frequency

Output Conductance vs. Drain Current

gos Output Conductance (S)

16 TA = 55_C 12 25_C 125_C 4

8 ID = 5 mA VGS = 0 V 0 10 100 1k f Frequency (Hz) 10 k 100 k

0 0.1 1 ID Drain Current (mA) 10

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