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    NTE2409 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl To NTE2408)

    Uploaded by

    Maikel González
    The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 surface mount package. It is designed for use in audio amplifiers and has a maximum collector-base voltage of 80V, collector-emitter voltage of 65V, and total power dissipation of 200mW. Key electrical characteristics include a typical DC current gain of 220-475, collector-emitter saturation voltage of 75-300mV at 10mA collector current, and transition frequency above 150MHz at 10mA collector current.

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    NTE2409 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl To NTE2408)

    Uploaded by

    Maikel González
    1K views2 pages
    The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 surface mount package. It is designed for use in audio amplifiers and has a maximum collector-base voltage of 80V, collector-emitter voltage of 65V, and total power dissipation of 200mW. Key electrical characteristics include a typical DC current gain of 220-475, collector-emitter saturation voltage of 75-300mV at 10mA collector current, and transition frequency above 150MHz at 10mA collector current.

    Original Title

    Reemplazo Del Transistor m6

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    © Attribution Non-Commercial (BY-NC)

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    The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 surface mount package. It is designed for use in audio amplifiers and has a maximum collector-base voltage of 80V, collector-emitter voltage of 65V, and total power dissipation of 200mW. Key electrical characteristics include a typical DC current gain of 220-475, collector-emitter saturation voltage of 75-300mV at 10mA collector current, and transition frequency above 150MHz at 10mA collector current.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    1K views2 pages

    NTE2409 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl To NTE2408)

    Uploaded by

    Maikel González
    The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 surface mount package. It is designed for use in audio amplifiers and has a maximum collector-base voltage of 80V, collector-emitter voltage of 65V, and total power dissipation of 200mW. Key electrical characteristics include a typical DC current gain of 220-475, collector-emitter saturation voltage of 75-300mV at 10mA collector current, and transition frequency above 150MHz at 10mA collector current.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    NTE2409

    Silicon PNP Transistor


    General Purpose Amp, Surface Mount
    (Compl to NTE2408)
    Description:
    The NTE2409 is a silicon PNP general purpose transistor in a SOT23 type surface mount package
    designed for use in driver stages of audio amplifiers in thick and thinfilm hybrid circuits.
    Absolute Maximum Ratings:
    CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
    CollectorEmitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
    CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
    EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
    Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
    Peak Emitter Current, IEM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
    Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
    Total Power Dissipation (TA = +60C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
    Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C
    Thermal Resistance, JunctiontoTab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
    Thermal Resistance, TabtoSoldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W
    Thermal Resistance, Soldering PointstoAmbient (Note 1), RthSA . . . . . . . . . . . . . . . . . . . . 90K/W
    Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
    Electrical Characteristics: (TJ = +25C unless otherwise specified)
    Parameter
    Collector Cutoff Current
    BaseEmitter Voltage
    CollectorEmitter Saturation Voltage

    Symbol
    ICBO
    VBE
    VCE(sat)

    Test Conditions

    Min

    Typ

    Max

    Unit

    VCB = 30V, IE = 0

    15

    nA

    VCB = 30V, IE = 0, TJ = +150C

    VCE = 5V, IC = 2mA, Note 2

    600

    650

    750

    mV

    VCE = 5V, IC = 10mA, Note 2

    820

    mV

    IC = 10mA, IB = 0.5mA, Note 3

    75

    300

    mV

    IC = 100mA, IB = 5mA, Note 3

    250

    650

    mV

    Note 2. VBE decreases by about 2mV/K with increasing temperature.


    Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.

    Electrical Characteristics (Contd): (TJ = +25C unless otherwise specified)


    Parameter

    Symbol

    BaseEmitter Saturation Voltage

    VBE(sat)

    DC Current Gain

    hFE

    Test Conditions

    Min

    Typ

    Max

    Unit

    IC = 10mA, IB = 0.5mA, Note 3

    700

    mV

    IC = 100mA, IB = 5mA, Note 3

    850

    mV

    220

    475

    VCE = 5V, IC = 2mA

    Transition Frequency

    fT

    VCE = 5V, IC = 10mA, f = 35MHz

    150

    MHz

    Collector Capacitance

    Cc

    VCB = 10V, IE = Ie = 0, f = 1MHz

    4.5

    pF

    SmallSignal Current Gain

    hfe

    VCE = 5V, IC = 2mA

    75

    900

    Noise Figure

    NF

    VCE = 5V, IC = 200A, f = 1kHz,


    B = 200Hz, RS = 2k

    10

    Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.

    .016 (0.48)

    C
    B

    .098
    (2.5)
    Max

    .037 (0.95)
    .074 (1.9)
    .118 (3.0) Max

    .051
    (1.3)

    .043 (1.1)

    .007 (0.2)

    dB

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