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    03 BJT-Basics PDF

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    Md Arif
    - A bipolar junction transistor (BJT) is a three-terminal semiconductor device made of doped materials that can be used to amplify or switch signals. It contains PN junctions and operates using both electrons and holes as charge carriers. - A BJT has three terminals - collector, base, and emitter. Current flows from the emitter to the collector, and the base controls the flow. BJTs come in NPN and PNP types that differ in the doping of their materials. - BJTs can be configured as common base, common emitter, or common collector circuits. The common emitter configuration is most widely used as an amplifier because a small base current can control

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    03 BJT-Basics PDF

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    Md Arif
    281 views13 pages
    - A bipolar junction transistor (BJT) is a three-terminal semiconductor device made of doped materials that can be used to amplify or switch signals. It contains PN junctions and operates using both electrons and holes as charge carriers. - A BJT has three terminals - collector, base, and emitter. Current flows from the emitter to the collector, and the base controls the flow. BJTs come in NPN and PNP types that differ in the doping of their materials. - BJTs can be configured as common base, common emitter, or common collector circuits. The common emitter configuration is most widely used as an amplifier because a small base current can control

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    - A bipolar junction transistor (BJT) is a three-terminal semiconductor device made of doped materials that can be used to amplify or switch signals. It contains PN junctions and operates using both electrons and holes as charge carriers. - A BJT has three terminals - collector, base, and emitter. Current flows from the emitter to the collector, and the base controls the flow. BJTs come in NPN and PNP types that differ in the doping of their materials. - BJTs can be configured as common base, common emitter, or common collector circuits. The common emitter configuration is most widely used as an amplifier because a small base current can control

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    281 views13 pages

    03 BJT-Basics PDF

    Uploaded by

    Md Arif
    - A bipolar junction transistor (BJT) is a three-terminal semiconductor device made of doped materials that can be used to amplify or switch signals. It contains PN junctions and operates using both electrons and holes as charge carriers. - A BJT has three terminals - collector, base, and emitter. Current flows from the emitter to the collector, and the base controls the flow. BJTs come in NPN and PNP types that differ in the doping of their materials. - BJTs can be configured as common base, common emitter, or common collector circuits. The common emitter configuration is most widely used as an amplifier because a small base current can control

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    Bipolar Junction Transistors - I

    (BJT-I)
    BASICS

    A bipolar junction transistor (BJT) is a three terminal


    device constructed of doped semiconductor material
    BJT is used in amplifying or switching applications, in
    discrete circuits and in IC design, both in analog and
    digital domain
    Bipolar Junction Transistors are so named because
    their operation involves both electrons and holes
    which are negative and positive charge carriers

    Physical Structure of PNP Transistor


    P
    Emitter
    (E)

    J1

    J2

    Emitter Base
    region region

    Emitter-Base
    Junction

    P
    Collector
    region

    Collector
    (C)

    Collector-Base
    Junction
    Base
    (B)

    Symbol

    C
    B
    E

    Arrow indicates the direction


    in which the current flows in
    the emitter

    Physical Structure of NPN Transistor


    N
    Emitter
    (E)

    J1

    J2

    Emitter Base
    region region

    Emitter-Base
    Junction

    N
    Collector
    region

    Collector
    (C)

    Collector-Base
    Junction
    Base
    (B)

    Symbol

    C
    B
    E

    Arrow indicates the direction


    in which the current flows in
    the emitter

    NPN

    PNP

    B
    E

    Mode of Operation

    B-E Junction

    B-C Junction

    Active

    Forward Biased

    Reverse Biased

    Saturation

    Forward Biased

    Forward Biased

    Cut-Off

    Reverse Biased

    Reverse Biased

    Amplifier: Signal voltage (or current) is amplified


    Output AC signal power is more than input AC signal power
    Switch:

    At Saturation, very low resistance between C and E


    At Cut-Off, No current flow from C to E

    Operation of a PNP Transistor in the Active mode


    C

    Forward Biased

    Reverse Biased

    E
    E

    IE

    IE

    IC

    ICO
    IB
    +

    IE= IB+ IC
    IC = IE+ ICO

    VEB

    +
    B

    VCB

    is the fraction of the total emitter


    current which goes from the emitter,
    across the base, to the collector

    Operation of an NPN Transistor in the Active mode


    C

    Forward Biased

    E
    E

    IE

    IE

    N
    Injected
    electrons

    Reverse Biased

    P
    Diffusing
    electrons

    IE

    Collected
    electrons

    +
    Drift Current

    Injected holes

    IB

    + +

    ++

    Recombined
    electrons

    IB
    -

    +
    VEB

    IE= IB+ IC
    IC = IE+ ICO

    +
    VCB

    IC0

    IC

    IC =
    I +I
    E

    I =I
    +I
    E
    B

    CO

    IC =
    (I +I
    )+I
    B
    C

    CO

    (1-)IC =IB +ICO

    1
    IC =
    IB +
    I CO
    1-
    1-
    Define

    =
    1-

    I C = I B + ( + 1)I CO

    Different Transistor configurations


    A Transistor may be operated in three different
    configurations :
    Common Base (CB)
    Common Emitter (CE)
    Common Collector (CC)

    Common Base (CB) Transistor Configuration


    NPN

    PNP
    IC

    IE
    E

    IE

    B
    + VCC

    IB

    + VEE

    IB

    IB

    - +
    VEE

    IE

    IC

    IE

    N P

    +
    VCC

    IC

    IB
    B

    IC

    Common Emitter (CE) Transistor Configuration


    PNP

    NPN

    C
    P

    IB
    VBB

    IC

    IC

    +
    IE

    IB

    VCC

    VBB

    IE

    IC

    IC

    IB

    IB

    B
    B
    IE
    E

    IE
    E

    VCC

    Common Collector (CC) Transistor Configuration


    IE

    PNP

    NPN

    E
    P

    IB
    VBB

    +
    IC

    E
    N

    IB

    IE

    VEE
    VBB

    +
    -

    IC

    IE

    IE

    IB

    B
    IC

    IC
    C

    IB

    VEE

    IC
    C

    IB

    The Common Emitter (CE) configuration


    is the most common configuration for
    using a transistor.

    IE
    E

    We will discuss this in more detail in our


    subsequent slides concentrating mainly
    on the way in which this can be used as
    an amplifier.
    To keep things simple, we will mainly
    look at circuits using an NPN transistor
    but the usage of a PNP transistor will be
    very similar (just use voltage supplies of
    opposite polarity!).

    NPN

    IC
    C

    IB
    B
    IE
    E

    PNP

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