PBSS4140S

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PBSS4140S
40 V low VCEsat NPN transistor
Product data sheet
Supersedes data of 2001 Nov 27
2004 Aug 20
NXP Semiconductors
Product data sheet
PBSS4140S
FEATURES
QUICK REFERENCE DATA
High power dissipation (830 mW)
SYMBOL
Ultra low collector-emitter saturation voltage
VCEO
collector-emitter voltage
40
IC
collector current (DC)
High current switching
ICM
peak collector current
Improved device reliability due to reduced heat

generation.
RCEsat
equivalent on-resistance
<500
1 A continuous current
PARAMETER
MAX. UNIT
PINNING
APPLICATIONS
PIN
Medium power switching and muting

Linear regulators
DC/DC converter
LCD back-lighting
DESCRIPTION
base
collector
emitter
Supply line switching circuits

Battery driven equipment (mobile phones, video
cameras and hand-held devices).
handbook, halfpage
DESCRIPTION
2
3
1
NPN low VCEsat transistor in a SOT54 plastic package.

PNP complement: PBSS5140S.
MAM459
MARKING
TYPE NUMBER
MARKING CODE
PBSS4140S
Fig.1 Simplified outline (SOT54) and symbol.
S4140S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
VCEO
collector-emitter voltage
open base
40
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
ICM
peak collector current
IBM
peak base current
Ptot
total power dissipation
830
mW
Tstg
storage temperature
65
+150
Tj
junction temperature
150
Tamb
operating ambient temperature
65
+150
Tamb 25 C; note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
2004 Aug 20
NXP Semiconductors
Product data sheet
PBSS4140S
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
150
K/W
in free air; note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
CHARACTERISTICS
Tamb = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
collector-base cut-off
current
VCB = 40 V; IC = 0
100
nA
VCB = 40 V; IC = 0; Tamb = 150 C
50
ICEO
collector-emitter cut-off
current
VCE = 30 V; IB = 0
100
nA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
100
nA
hFE
DC current gain
VCE = 5 V; IC = 1 mA
300
VCE = 5 V; IC = 500 mA
300
900
VCE = 5 V; IC = 1 A
200
IC = 100 mA; IB = 1 mA
200
mV
IC = 500 mA; IB = 50 mA
250
mV
ICBO
VCEsat
collector-emitter saturation
voltage
IC = 1 A; IB = 100 mA
500
mV
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
260
<500
VBEsat
base-emitter saturation
voltage
IC = 1 A; IB = 100 mA
1.2
VBEon
base-emitter turn-on voltage VCE = 5 V; IC = 1 A
1.1
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
150
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
10
pF
Note
1. Pulse test: tp 300 s; 0.02.
2004 Aug 20
NXP Semiconductors
Product data sheet
PBSS4140S
MHC077
1000
MHC078
10
handbook, halfpage
handbook, halfpage
hFE
VBE
(V)
(1)
800
600
(2)
(1)
(2)
400
(3)
(3)
200
0
101
102
10
101
101
103
104
IC (mA)
VCE = 5 V.
(1) Tamb = 150 C.
(2) Tamb = 25 C.
(3) Tamb = 55 C.
VCE = 5 V.
(1) Tamb = 55 C.
(2) Tamb = 25 C.
(3) Tamb = 150 C.
Fig.2
Fig.3
DC current gain as a function of collector

current; typical values.
MHC079
103
handbook, halfpage
10
102
Base-emitter voltage as a function of

collector current; typical values.
MHC080
102
handbook, halfpage
VCEsat
(mV)
103
104
IC (mA)
RCEsat
()
102
10
(1)
(2)
(3)
10
1
(1)
(2)
(3)
10
102
103
IC (mA)
101
101
104
IC/IB = 10.
(1) Tamb = 150 C.

(2) Tamb = 25 C.
(3) Tamb = 55 C.
IC/IB = 10.
(1) Tamb = 150 C.
(2) Tamb = 25 C.
(3) Tamb = 55 C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a

function of collector current; typical values.
2004 Aug 20
10
102
103
104
IC (mA)
Equivalent on-resistance as a function of

collector current; typical values.
NXP Semiconductors
Product data sheet
PBSS4140S
MHC081
400
handbook, halfpage
fT
(MHz)
300
200
100
0
0
200
400
600
800
1000
IC (mA)
VCE = 10 V.
Fig.6
2004 Aug 20
Transition frequency as a function of

collector current.
NXP Semiconductors
Product data sheet
PBSS4140S
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
E
d
L
b
1
e1
3
b1
L1
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)

UNIT
b1
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Aug 20
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
NXP Semiconductors
Product data sheet
PBSS4140S
DATA SHEET STATUS

DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale NXP Semiconductors

products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes NXP Semiconductors

reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license Nothing in this document

may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use NXP Semiconductors products are

not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customers own risk.
Export control This document as well as the item(s)

described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications Applications that are described herein for

any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Aug 20
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
NXP B.V. 2009

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp8
Date of release: 2004 Aug 20
Document order number: 9397 750 13634

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DISCRETE SEMICONDUCTORS

Product data sheet

40 V low VCEsat NPN transistor

QUICK REFERENCE DATA

High power dissipation (830 mW)

Ultra low collector-emitter saturation voltage

collector current (DC)

High current switching

peak collector current

Improved device reliability due to reduced heat

Medium power switching and muting

Supply line switching circuits

NPN low VCEsat transistor in a SOT54 plastic package.

Fig.1 Simplified outline (SOT54) and symbol.

collector current (DC)

peak collector current

peak base current

total power dissipation

operating ambient temperature

Product data sheet

40 V low VCEsat NPN transistor

thermal resistance from junction to ambient

in free air; note 1

VCB = 40 V; IC = 0; Tamb = 150 C

emitter-base cut-off current

IC = 500 mA; IB = 50 mA; note 1

base-emitter turn-on voltage VCE = 5 V; IC = 1 A

IC = 50 mA; VCE = 10 V; f = 100 MHz

Product data sheet

40 V low VCEsat NPN transistor

DC current gain as a function of collector

Base-emitter voltage as a function of

(1) Tamb = 150 C.

Collector-emitter saturation voltage as a

Equivalent on-resistance as a function of

Product data sheet

40 V low VCEsat NPN transistor

Transition frequency as a function of

Product data sheet

40 V low VCEsat NPN transistor

DIMENSIONS (mm are the original dimensions)

Product data sheet

40 V low VCEsat NPN transistor

DATA SHEET STATUS

Objective data sheet

Preliminary data sheet

This document contains data from the preliminary specification.

Product data sheet

This document contains the product specification.

Terms and conditions of sale NXP Semiconductors

Right to make changes NXP Semiconductors

No offer to sell or license Nothing in this document

Suitability for use NXP Semiconductors products are

Export control This document as well as the item(s)

Applications Applications that are described herein for

NXP B.V. 2009

Date of release: 2004 Aug 20

Document order number: 9397 750 13634

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