BC327 & BC337: General Purpose Transistors
BC327 & BC337: General Purpose Transistors
BC327 & BC337: General Purpose Transistors
BC327 PNP
BC337 NPN
Minimum
Maximum
4.32
5.33
4.45
5.20
3.18
4.19
0.41
0.55
0.35
0.50
1.14
1.40
1.14
1.53
12.70
1.982
2.082
Dimensions : Millimetres
Pin Configuration
1. Emitter
2. Base
3. Collector
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31/05/05 V1.0
BC327 NPN
BC337 PNP
Symbol
Collector-Emitter Voltage
VCEO
45
Collector-Emitter Voltage
VCES
50
Emitter-Base Voltage
VEBO
5.0
IC
Unit
mA
ICM
800
1.0
IEM
1.0
IB
100
IBM
200
PTA
625
5.0
mW
mW/C
Tj, Tstg
-65 to +150
Rth(j-a)
200
C/W
mA
Thermal Resistance
From Junction to Ambient in Free Air
Symbol
Test Condition
BC327
Unit
Collector-Emitter Voltage
VCEO
VCES
IC = 10mA, IB = 0
IC = 100A. IE = 0
>45
>50
V
V
Emitter-Base Voltage
VEBO
IE = 10A, IC = 0
>5.0
ICBO
VCB = 20V, IE = 0
VCB = 20V, IE = 0, TJ = 150C
<100
<5.0
nA
A
IEBO
VEB = 5V, IC = 0
<10
DC Current Gain
hFE*
IC = 100mA, VCE = 1V
Group 16
Group 25
100-600
100-250
160-400
VCE(Sat)*
IC = 500mA, IB = 50mA
<0.70
VBE(on)*
IC = 500mA, VCE = 1V
<1.20
Dynamic Characteristics
fT
NPN
PNP
Typ 200
Typ 100
MHz
Cob
NPN
PNP
Typ 5.0
Typ 8.0
pF
Transistors Frequency
Output Capacitance
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45
VCES
maximum
(V)
50
IC
(A)
hFE
minimum
at IC = 100mA
FT minimum
(Typical*)
F = 35MHz
0.8
160-400
100
0.5
100-600
60
100-250
0.8
160-400
210
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Ptot
(mW)
Package
Part Number
BC327.25
625
TO-92
BC337
BC337.16
BC337.25
31/05/05 V1.0
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31/05/05 V1.0