Some Recent Developments in Acceleration Sensors: George Juraj STEIN
Some Recent Developments in Acceleration Sensors: George Juraj STEIN
Some Recent Developments in Acceleration Sensors: George Juraj STEIN
(1)
where the so-called sensors natural circular frequency 0 = (c/m) and dimension-less
damping ratio = b/bkrit , with critical damping bkrit = (4cm) are introduced. In this way the
acceleration &&
y(t ) of the sensor base is converted to relative movement of the proof mass in
respect to the body. Then certain mechanical variables are subject to further transformation to
electrical quantities and their further processing in acceleration sensors [1-3]:
a. Force Kx(t) in the spring type element via the intrisinic piezo-electric effect,
b. Relative displacement x(t) by a relative displacement sensor,
c. Counter-balancing the elastic force Kx(t) by another force of non-inertial nature, hence
establishing a pre-set equilibrium position sensed by a sensitive null-detector.
The first transducing principle is widely used in standard piezo-electric accelerometers,
having well known properties - good linearity and wide dynamic range, ruggedness, etc.
However, being a charge source has also some disadvantages - very high inner impedance,
low output signal and no steady state response. Some miniaturised accelerometers are
equipped with build-in integrated pre-amplifier/impedance converter, and in this way above
disadvantages are partially removed. Such an accelerometer is connected by a standard coaxial
cable to a simple powering front-end unit where the ac vibratory signal is branched of for
further processing. This type of accelerometer is generally termed as the Integrated Electronic
Piezo-Electric sensor (IEPE sensor) and is marketed under various brand names.
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The servo-accelerometer principle is following [6]: the sensitive element (dashed) is a comblike structure of 46 differential capacitors arranged in parallel on a beam forming the seismic
mass supported by springs etched from silicon substrate. The differential capacitor forms a
capacitive half-bridge driven from a high frequency square wave generator by opposite phase
pulses. When acceleration is applied perpendicularly to the seismic mass the differential
capacitor is mismatched and a non-zero signal appears on the central plate. This signal is preamplified, demodulated in the synchronous detector, amplified and outputted as voltage VPR,
corresponding to the applied acceleration. The demodulated signal VPR is feedback via the
internal loop 3 M resistor to the differential capacitor's central plate, so providing the
electrostatic restoring force to move the beam to the original centred position. Further signal
processing is provided on-board by a build-in signal conditioning/band-limiting amplifier.
Further improvements [7] consist of addition of a temperature sensor to compensate for
temperature influence and of using an on-board voltage-to-duty cycle converter to improve
connectivity to micro-controller (no ADC is required; instead counter inputs are used).
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m v 2 = 12 c x 2 = 12 k BT .
(2)
The average squared displacement x 2 of the oscillating mass due to the random thermal
force is equal to GN/(4bc) [8], while, according to generalised Nyquist's theorem, GN = 4bkBT.
Then the signal to noise ratio (SNR) due to thermal agitation is given as the ratio of the square
of the rms value of the force due to excitation by acceleration (ma) to the square of the rms
value of the force due to thermal agitation at temperature T [8, 9]:
SNR = (ma ) : (4 k BbT ) .
2
(3)
This source of noise is manifest at sensor's natural frequency, especially if in vacuum and
adds to the Johnson type noise generated by the sensor's electronic circuits [5]. For practical
purposes a SNR value of 1 is assumed. Then the combined thermal and Johnson noise floor is
given as equivalent rms acceleration value for the designed sensor frequency band [5-7].
The 1/f noise source seems to play an
important role in acceleration measurement
at low frequency [8, 9]. This noise source is
termed the Hooge's noise [9]. The power
spectral density frequency distribution GH(f)
depends on the biasing voltage across a
resistor Vb and the number of carriers n in
the resistor, is a constant (Fig. 3 after [9]):
GH ( f )= Vb2
(nf ).
(4)
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