5N52U
5N52U
5N52U
STF5N52U, STI5N52U
N-channel 525 V, 1.28 , 4.4 A, DPAK, TO-220FP, I2PAK
UltraFASTmesh Power MOSFET
Features
VDSS
RDS(on)
max
ID
Pw
525 V
< 1.5
4.4 A
25 W
Type
STD5N52U
STF5N52U
70 W
STI5N52U
TAB
TAB
3
70 W
DPAK
I2PAK
TO-220FP
Figure 1.
Applications
3
12
3
1
D or TAB(2)
Switching applications
High voltage inverters specific fo LCD TV
Lighting full bridge topology
Motor control
G(1)
Description
These devices are N-channel Power MOSFETs
developed using UltraFASTmesh technology,
which combines the advantages of reduced onresistance, Zener gate protection and very high
dv/dt capability with an enhanced fast body-drain
recovery diode.
Table 1.
S(3)
AM01476v1
Device summary
Order code
Marking
Package
Packaging
STD5N52U
5N52U
DPAK
STF5N52U
5N52U
TO-220FP
Tube
STI5N52U
5N52U
I2PAK
Tube
September 2011
1/18
www.st.com
18
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
........................... 6
Test circuits
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
.............................................. 9
Electrical ratings
Electrical ratings
Table 2.
Symbol
Parameter
DPAK
VGS
TO-220FP
I2PAK
Unit
30
ID
4.4
ID
2.8
17.6
IDM
(1)
PTOT
Total dissipation at TC = 25 C
70
25
70
IAR
4.4
EAS
170
mJ
20
V/ns
2800
dv/dt(2)
TJ
Tstg
2500
-55 to 150
Table 3.
Thermal data
Value
Symbol
Parameter
Rthj-case
Rthj-amb
Rthj-pcb
Unit
DPAK
TO-220FP
I2PAK
1.78
1.78
C/W
62.5
100
C/W
50
C/W
3/18
Electrical characteristics
Electrical characteristics
(Tcase =25 C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
Min.
Typ.
Max.
Unit
525
IDSS
VDS = 525 V
Zero gate voltage
drain current (VGS = 0) VDS = 525 V, TC=125 C
10
500
A
A
IGSS
Gate-body leakage
current (VDS = 0)
10
3.75
4.5
1.28
1.5
Min.
Typ.
Max.
Unit
pF
pF
pF
VGS = 20 V
VGS(th)
RDS(on)
Static drain-source on
resistance
Table 5.
Symbol
VGS = 10 V, ID = 2.2 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
529
71
13.4
Equivalent
capacitance time
related
11
pF
Rg
Qg
Qgs
Qgd
16.9
4.2
8.4
nC
nC
nC
Ciss
Coss
Crss
Co(tr)(1)
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Table 6.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
4/18
Test conditions
VDD = 260 V, ID = 2.2 A,
RG = 4.7 , VGS = 10 V
(see Figure 16)
Min.
Typ.
11.4
13.6
23.1
15
Max. Unit
ns
ns
ns
ns
Table 7.
Symbol
ISD
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Electrical characteristics
Test conditions
Source-drain current
Source-drain current (pulsed)
4.4
17.6
A
A
1.6
Forward on voltage
55
95
3.5
ns
C
A
120
266
4.5
ns
C
A
Table 8.
Symbol
BVGSO
Test conditions
Gate-source breakdown
voltage
Min.
Typ.
30
Max. Unit
-
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the devices ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the devices
integrity. These integrated Zener diodes thus avoid the usage of external components.
5/18
Electrical characteristics
2.1
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
6/18
Electrical characteristics
Figure 8.
Figure 10.
Figure 9.
7/18
Electrical characteristics
Figure 14. Source-drain diode forward
characteristics
8/18
Test circuits
Test circuits
47k
1k
100nF
3.3
F
2200
RL
VGS
IG=CONST
VDD
100
Vi=20V=VGMAX
VD
RG
2200
F
D.U.T.
D.U.T.
VG
2.7k
PW
47k
1k
PW
AM01468v1
AM01469v1
D.U.T.
FAST
DIODE
D
G
VD
L=100H
3.3
F
25
1000
F
VDD
2200
F
3.3
F
VDD
ID
G
RG
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
10%
AM01473v1
9/18
10/18
Table 9.
Dim.
Min.
Typ.
Max.
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
0.64
0.90
b4
5.20
5.40
0.45
0.60
c2
0.48
0.60
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
2.28
e1
4.40
4.60
9.35
10.10
1.50
L1
2.80
L2
0.80
L4
0.60
R
V2
0.20
0
11/18
0068772_H
1.8
1.6
2.3
6.7
2.3
1.6
AM08850v1
12/18
Table 10.
Dim.
Min.
Typ.
Max.
4.4
4.6
2.5
2.7
2.5
2.75
0.45
0.7
0.75
F1
1.15
1.70
F2
1.15
1.70
4.95
5.2
G1
2.4
2.7
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9.3
Dia
3.2
A
B
D
Dia
L5
L6
F1
F2
F
H
G1
L4
L2
L3
7012510_Rev_K
13/18
Table 11.
DIM.
min.
typ
max.
4.40
4.60
A1
2.40
2.72
0.61
0.88
b1
1.14
1.70
0.49
0.70
c2
1.23
1.32
8.95
9.35
2.40
2.70
e1
4.95
5.15
10
10.40
13
14
L1
3.50
3.93
L2
1.27
1.40
0004982_Rev_H
14/18
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
B0
10.4
10.6
1.5
12.1
12.8
1.6
20.2
16.4
50
B1
Min.
Max.
330
13.2
1.5
D1
1.5
1.65
1.85
7.4
7.6
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
40
0.25
0.35
15.7
16.3
18.4
22.4
15/18
P0
Top cover
tape
P2
E
F
B1
K0
B0
A0
P1
D1
Bending radius
User direction of feed
AM08852v1
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
16/18
Revision history
Revision history
Table 13.
Date
Revision
06-May-2009
First release.
28-Sep-2011
Changes
17/18
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