GDE001*

IGBTDriver
ApplicationManual

ConsiderationNeededforSafetyDesign
Whileourcompanyhasmadesignificantefforttoimprovethequalityandreliabilityofourproducts,
semiconductorapplicationproductscannotbecompletelyfreefromfaultsandmalfunctions.
Therefore,extremecareneedstobetakenforsafetydesign forexample,redundancydesign,fire
spreadpreventiondesign,andmalfunctionpreventiondesign sothatfaultormalfunctionofour
semiconductorapplicationproductswillnotresultinanincidentsuchasafatalaccident,fire
accident,andsocialproblem.

ImportantNotesforUseofThisDocument

Thisdocumentaimstohelpyouchooseandpurchaseourappropriateproductswhichmeetyour
applications.Regardingthetechnicalinformationprovidedonthisdocument,theimplementation
anduseofintellectualpropertyrightsandotherrightswhichhavebeenpossessedbyourcompany
arenotgrantedbythedocument.
Ourcompanyshallnotbeliabletoadamagewhichattributestotheuseoftheproductdata,
figures,tables,programs,algorithms,andcircuitapplicationexampleswhicharepresentedinthis
documentandtoviolationofrightspossessedbythirdparties.
Theproductdata,figures,tables,programs,algorithms,andallotherinformationpresentedinthis
documentarethosewhichwerethelatestwhenthedocumentwasgenerated.Thesearesubjectto
changewithoutnoticeforreasonssuchasimprovementofcharacteristics.Therefore,before
purchasingourproducts,checkthelatestinformationwithoursalesrepresentative.
Whenusingtechnicalinformationshownintheproductdata,figures,andtablesinthisdocument,
performthoroughevaluationfromtheperspectiveoftheentiresystembesidesthetechnical
informationitself,andjudgeonyouraccountwhetherthetechnicalinformationisapplicable.Our
companyshallnotbeliabletotheapplicabilityofourproducts.
Theproductsdescribedinthisdocumenthavenotbeendesignedandproducedforusewith
equipmentorsystemwhichisoperatedinanenvironmentwhichinvolveshumanlives.Ifintending
tousetheproducts,forspecialpurposes forexample,transportation,medicalapplications,
aerospace,nuclearpowercontrol,andsubmarinerelayequipmentorsystems,contactoursales
representative.
Reprintorreproductionofthisdocumentneedsourwrittenpermission.
Foranyinquiryaboutthecontentswritteninthisdocument,contactoursalesrepresentative.

ISAHAYAELECTRONICSCORPORATION

Contents

FeaturesofISAHAYAELECTRONICSIGBTDrivers

4p

IGBTDriverProductTree

4p

WhatisIGBT?

5p

WhatisIGBTDriver?

5p

AdvantagesofContainingShortCircuitProtectionCircuit

6p

OperationofShortCircuitProtectionCircuit

7p

EffectivenessofLatch/TimerResetSysteminShortCircuitProtectionCircuit8p
CollectorClampCircuitOperations

9p

GatePowerSupply

10p

SelectionofOutputCurrentCapacityofGatePowerSupply 11p
Derating byPowerConsumptionorGateAverageCurrent 11p
GateResistance

12p

GateDriverSelectionGuide

13,14p

InputGateSignalDriveCircuit

15p

WiringforGate,EmitterandPowerSupply

16p

MethodforDeactivatingShortCircuitProtectionCircuit

16p

FeaturesofISAHAYAELECTRONICSIGBTDrivers
Sincearound1990,ourcompanyhasdevelopedandproducedhybridICsforIGBTmoduledrivetobeusedintheindustrial
equipmentfield,andhasaccumulatedexperienceandaccomplishmentforover25years.Thecharacteristicsofourproduct
lineupareasfollows:
Wideapplicationrange
Awiderangeofproducts from15Acurrentcapacityclassto3600AclassIGBTmodules areavailable.
Builtinshortcircuitprotectioncircuit
MostofourproductscontainshortcircuitprotectioncircuitswhichareeffectivetopreventIGBTsfrombeingdamagedinterms
ofshortcircuit.
Widestructurevariation
Widestructurevariation(e.g.,SIL,DIL,andunittype)servestomakeyourproductssmallerandtosimplifyyourproduct
assembly.
Provisionofgatepowersupplies
Besidesgatedrivecircuits,productswhichcontaingatepowersuppliesareavailable,sothatanappropriateproductcanbe
chosendependingonequipmentdesignconditions.
Effectivetostandardizationofequipmentdesign
Standardizationisessentialtoimprovedesignefficiencyinthepresentsituationswheretheshortageofanalogengineershas
beenclaimed.
DesignstandardizationandcomponentstandardizationarepossiblebyusingISAHAYAELECTRONICSgatedriversingatedrive
circuits.

SIL

DIL

IGBTnonmountableunittype

IGBTmountableunittype

IGBTDriverProductTree

NonBuiltinPower
SupplyType

VLA507/VLA513
M57159L/M57959AL
M57962AL/M57962CL
VLA520/VLA531
VLA541/VLA542
VLA546

BuiltinPower
SupplyType

VLA500/VLA500K
VLA502/VLA551
VLA551K/VLA552
VLA554/VLA567

BuiltinPower
SupplyType

VLA536/VLA553
VLA555/VLA559

HybridICType

IGBTDriver
IGBTMountableUnit
Type

IGBTNonMountable
UnitType

BuiltinPower
SupplyType

GAU205S15252
GAU205P15252A
GAU205P15402
GAU208P15252
GAU212S15255
GAU212P15255
GAU405P15252
GAU605P15252

WhatisIGBT?
AnIGBTstandsforIsolatedGateBipolarTransistor.(Itselementsymbolisshowninthefigurebelow.)
Itisapowerdevicehavingacombinationofthefollowinggoodcharacteristics:largepowercharacteristicsofbipolartransistorsand
highspeedswitchingandvoltagedrivecharacteristicsofMOSFET.
Collector

Gate

Applications

Generalpurposeinverter,UPS,ACservo
robot,weldingmachine,largetypepower
supplyunit,solarpowergeneration,wind
powergeneration,inductionheating
equipment,etc.

Emitter
Charged/dischargedcurrentto
switchON/OFFthegate

Cies = CCG + CGE

IGBTisavoltagedrivetypeelement.
WhileanIGBTisavoltagedrivetypeelement,charge/dischargeforinputcapacity(Cies)isneededtoturn
onandoffthegatebecauseofthepresenceofcapacitybetweentheindividualterminalsasshownabove.
Therefore,switchinganIGBTneedsagatecharge/dischargecircuit.Onegatedrivecircuitisneededfor
eachIGBTelement.

WhatisIGBTDriver?
Thefigurebelowisablockdiagramwhichoutlinesagatedrivecircuit.
Agatedrivecircuitismainlycomposedofthreesections.
Oneisanoptocouplerwhichelectricallyisolatessignals.Anotherisaninterfacecircuitwhichreceivesand
amplifiessignalswhichcomefromtheoptocoupler.Theotherisaswitchingtransistorwhichservestocharge
anddischargetheIGBTgatecapacity.
WhenanIGBTisswitchedon,thegatevoltageneedspositivebiasto15V.Whenitisswitchedoff,thegate
voltageneedsnegativebiastoaround10V.
Thegatecapacitychargeanddischargewhichareneededatthistimemustbeexecutedathighspeed.
TheISAHAYAELECTRONICSIGBTdriversarehybridICswhichintegratedrivecircuitsforhighspeedgatecapacity
chargeanddischargefollowingreceptionofsignals.

Vcc=+15V
IGBTModule

IGBTDriver
ShortCircuit
DetectionCircuit

Optocoupler

Ig_ON
Interface and
Amplifier

ON/OFFGateSignal
fromLogicIC

Ig_OFF
GateShutdown
Circuit

ElectricalIsolation
SignalConversion

GateSignal
Amplification

Current
Amplification

Vee=10V
(6~10)

AdvantagesofContainingShortCircuitProtectionCircuit
Typically,itisdesirabletoperformIGBTshortcircuitprotectionbyswitchingoffthegateat10sorless.
Forthepurposeofthishighspeedprotection,ISAHAYAELECTRONICSIGBTdrivers(withsomeexceptions)containshort
circuitprotectioncircuits.Theproductcanbemadesmallerbybuildingagatedrivecircuitandshortcircuitprotection
circuitinonehybridIC.Asanotheradvantage,sinceashortcircuitdetectioncircuitandgateshutdowncircuitare
immediatelynearagatedrivecircuit,coordinationamongthecircuitsiseasy:immediatelyaftershortcircuitisdetected,
gateoutputcanbeshutdowneasily.
IfagatedrivecircuitanddetectioncircuitareplacedseparatelyanddetectedsignalsaresenttoaninputsideCPUtostop
gatesignals,itmaytaketimetoswitchoffthegateandthusitishighlyprobablethatelementdamageisresulted.
ShortCircuitProtectionCircuit

Vcc
4

Latch
14

Detection
Circuit

DetectionTerminal

IGBT
Module

Timerand
ResetCircuits
RG
Interface and
Amplifier
Optocoupler
13

5
Gate
Shutdown
Circuit

Vo

8 AlarmOutput
6

VEE

VLA54201R(RepresentativeModel)FunctionBlockDiagram

OperationofShortCircuitProtectionCircuit
TheshortcircuitprotectioncircuitbuiltintheIGBTdriverrecognizesshortcircuitstatusandimmediatelylowersthegatevoltage
whenthegateoutputisONandthecollectorvoltageoftheIGBTishigh.Atthesametime,theprotectioncircuitmakesalarmsignals
beoutputfromthealarmoutputterminalatLtotellthattheprotectioncircuitisfunctioning.
ThefigurebelowshowsanexampleofoperationwaveformgenerationwhichtakesplacewhenshortcircuitoccursaftertheIGBTis
switchedon.
Whenshortcircuitoccurs,thecollectorcurrentincreasesrapidly,followedbytheincreaseofthecollectorvoltage.Theoutputofthe
comparisoncircuitshownintheshortcircuitprotectioncircuitfunctionblockdiagrambelowisreversedduetoincreaseofthe
collectorvoltage,andthelatchandtimercircuitsstarttooperate,switchingonQ1.Then,theVout decreasesslowly,resultinginslow
decreaseoftheIGBTgatevoltageandsoftshutdown.Softshutdownwhichdecreasesthegatevoltageslowlysuppressesincreaseof
surgevoltagewhichisgeneratedwhentheshortcircuitcurrentofisIGBTisshutdown.Theshortcircuitprotectioncircuitof the
IGBTdriverdoesnotdirectlymonitorthecollectorcurrentoftheIGBT:itmonitorsthevoltageoftheVCE.Therefore,notethathigh
precisiondetectionprotectionisnotpossible.
IC

VCE

Shortcircuit
occurrence
point

VCE:Large
(Detection)

VGE

Softgateshutdownforsuppressionofsurgevoltage

Alarmoutputvoltage

Vcc (15V)
4

Vref

FRD
RP1H(Sanken)etc.

1
Vf n

Comparison
Circuit

Vout

Interface and
Amplifier

VCE

Latch
and
Timer

8
Q1

Alarm Output

Csoft
6

VLA542ShortCircuitProtectionCircuitFunctionBlockDiagram

VEE(10V)

TheprotectionisperformedbyswitchingofftheIGBTthroughthefollowingsequence:shortcircuitoccurrence>VCEvoltage
increase>comparisoncircuitreverse>Q1turnon>Vout (VGE)voltagedecrease>alarmoutputstart>IGBTturnoff.
TheVCEvoltageoutputwhenshortcircuitisactuallydetectedisresultedfromthefollowingequation:Vref (approx.9.5V) Vf
xn(wherenisnormally1).
Thedatasheetshows15V(minimum)astheshortcircuitdetectionvoltageVSC.Thisdesignatesthatdetectioniscertainly
possibleat15Vorhighervoltage.
TheCsoft inthefigureaboveisbuiltinthegatedriver.However,someproductsallowthegatedecreasespeedtobe
adjustedbyconnectingCsoft toanexternalterminalandconnectinganexternalcapacitortotheterminal.
SeetheproductlistintheGateDriverSelectionGuidesectionwhichispresentedlater.
7

Effectiveness of Latch/Timer Reset System in Short-Circuit Protection Circuit

Thissectiondescribesthecharacteristicsoftheshortcircuit
protectioncircuitofISAHAYAELECTRONICSIGBTdrivers.Once
theshortcircuitprotectioncircuitstartstofunction,itshuts
downthegateoutputandkeepsalarmoutput,causingthelatch
status.ThisstatusiscancelediftheinputsignalisOFFwhen
specifictimeelapsesaftertheactivationoftheshortcircuit
protectioncircuit.Then,gateoutputdependingoninputsignals
becomespossible.IftheinputsignalisONwhenspecifictime
elapses,thelatchstatusisnotcanceled:itiscanceledwhenthe
signalbecomesOFF.
Theflowchartshowntotherightshowstheoperationflow
regardingshortcircuitdetectionbyVLA542,whichisa
representativemodelthatcontainsthissystem.Theuppertime
chartpresentedbelowshowstherelationshipbetweenthe
VLA542inputsignalsandgateoutput.
Thelowertimechartshowsanoperationexampleofasystem
whichisresetthroughpulebypulse.
Asshownintheuppertimechart,onthelatch/timersystem,the
latchstatusisresultedafteractivationoftheprotectioncircuit
andshutdownofthegateoutput.Therefore,duringthisperiod,
gateoutputisnotmadenomatterhowmuchinputsignalsare
received.Forthisreason,itispossibletosafelystoptheentire
equipmentbysendingerrorsignalstothemicrocomputerduring
thisperiodtostopgatesignals.
However,forthepulsebypulsesystemshowninthelowertime
chart,resettingismadewhenthegatesignalisOFFevenafter
thegateoutputisdecreasedforprotection.Thus,whenthenext
gatesignalisreceived,gateoutputismadeandshortcircuitmay
beinducedagain.Therefore,itisnecessarytostopgatesignals
byinformingthemicrocomputerofanerroratveryhighspeed.
Forthereasonabove,thelatch/timerresetsignaleases
protectionoperationswhicharenottightontime.

ShortCircuitProtectionCircuitOperationFlow
(Exampleofarepresentativemodel,VLA54201R)
Start
Detectionofshortcircuit
status

Gate output shutdown

Timer operation start
Alarm output

Timer
1to2ms

Timerend

Istheinputsignal
OFF?

Thealarmiscleared.
Gateoutputispossible.

Thelatchstatusis
canceled.

Latch/TimerResetMethod(MainstreamofISAHAYAELECTRONICSIGBTdrivers)
InputGateSignal
Thegateshutdownstatusiskeptuntilthetimertime
elapses,irrespectiveofinputgatesignals.The
microcomputerisallowedtostopsignalswellinadvance.
GateOutput

OrdinaryPulsebyPulseResetMethod
InputGateSignal

GateOutput
Thegateisturnedonforeachgatesignalinput,andthusshort
circuitisrepeated,resultinginIGBTdamageunlesstheshort
circuitstatusiscanceled.
Forthissystem,inputsignalsmustbestoppedbeforethenextgate
rise.
Note:Someofourproductshaveemployedthepulsebypulsemethodasexceptions:checkwiththe
functionblockdiagramsinthedatasheets.Forproductswiththelatch/timerresetmethod,alatchcircuit
andadetectioncircuitareusedasasuite.

CollectorClampCircuitOperations
Inrecentyears,collectorclampbuiltinunitsfordrivinglargecapacityIGBTmoduleshavebeendeveloped.Thissectiondescribes
theoperationsofthecollectorclampcircuitthatisbuiltintheVLA553,whichisarepresentativemodel.
ThefigurebelowshowsoperationwaveformsofthegatevoltageandcollectorvoltagewhicharegeneratedwhentheIGBTis
turnedoff.
Thecollectorvoltageportionwhichjumpsfromthemainpowersupplyvoltageattributestothestrayinductanceofthemain
circuit.AsthecurrentvaluebecomeslargerwhentheIGBTisturnedoff,thedegreeofthejumpbecomeslarger.
Ifthemaximumvoltageatthattimeisbeyondthemaximumratingofthecollectorvoltage,theIGBTisdamaged.
Thecollectorclampcircuitaimstosuppressthisjumpofthecollectorvoltage.

Ls xdi/dt
VDC_Link
VCE

ThisvoltagemustnotexceedthespecificationoftheVCESoftheIGBT.

VGE
Theportioncircledwiththedottedlineisacollectorclampcircuit.
WhentheIGBTisturnedoff,thecollectorvoltageincreasesduetotheeffectofthestrayinductance.Whenthecollectorvoltage
exceedsthiszener voltage,zener currentflowstartsandthecurrentisdividedintotheonewhichflowstothegatedirectlyand
theonewhichflowstothebuffersection,eventuallyresultinginincreaseoftheIGBTgatevoltage.
Theincreaseofthegatevoltagesuppressestheoffspeedofthecollectorcurrent,resultinginsuppressionofthedi/dt andthus
suppressionofthecollectorvoltage.

Ls

Integrativestrayinductanceofthemainwiring

VDC_Link

Iz

IC

Collectorclampcircuit

Inter
face

Gatevoltageincrease

VLA553collectorclampcircuitfunctionblockdiagram

VCE

ThemaximumVCEvalueissuppressedbythecollectorclampcircuit.

VDC_Link

IC

Thedi/dt issuppressedbytheworkofthecollectorclampcircuit.

VGE

GatePowerSupply
Inthisdocument,gatepowersupplyreferstoapowersupplyforanIGBTgatedrivecircuit.
Thisgatepowersupplyneedsisolationtype+15Vand10Vpowersupplies.
Basically,onegatepowersupplyneedsasuiteofpositiveandnegativepowersupplies.
Regardingtheinputoutputisolationvoltageofthegatepowersupply,itisrecommendedtochoosethe
onewhichisnotlowerthantheisolationvoltageofthepackageoftheIGBTmodule.

IGBTmodule

+15V

Isolationtypepowersupply
(Gatepowersupply)

IGBTdriver

10V
+15V

UorVorW
IGBTdriver

10V

Inacasewhereanisolationtypepowersupplyischosenasagatepowersupply,trytochoosetheonehavingsmall
capacitanceinputtooutput.Ifcapacitanceinputtooutputislarge,switchingnoiseoftheIGBTiseasilysenttothe
inputside,possiblyresultinginmalfunctionofthecontrolcircuitoftheequipment.ForISAHAYAELECTRONICSVLA106
seriespowersuppliesforexample,thecapacitanceinputtooutputis35pF(approx.)orlessandhaslongbeenusedfor
IGBTswitchingwithoutanyproblems.
ThefigurebelowisthefunctionblockdiagramofanisolationtypeDC/DCconverterwhichemploystheflyback
method.Somepowersupplieswhicharecommerciallyavailablecontaincouplingcapacitorsbetweentheprimaryand
secondarysidesasshowninthefigure.Forthereasonsmentionedabove,usingthistypeisnotrecommended.

Transformer

Filter
Constant
voltage
circuit

Basedrive
circuit
Overcurrent
protectioncircuit

Couplingcapacitor

VCC

GND

Optocoupler

Itisnotrecommendedasagatepowersupplytousethetypewhichcontainsacouplingcapacitor
betweentheprimaryandsecondarysides.

10

SelectionofOutputCurrentCapacityofGatePowerSupply
Astheoutputcurrentcapacityofthegatepowersupply,choosetheonewhichallowssupplyofcurrentwhichisobtainedwith
thecalculationbelow:
Io=(ldrive +lcc)x(1+M)
lo:Outputcurrentcapacityofthegatepowersupply
ldrive =Gateaveragecurrent
lcc:ConstantcurrentconsumptionoftheIGBTdriver(Readfromthecharacteristicdiagramregardingthecurrentconsumption
vs.powersupplyvoltagecharacteristicsinthedatasheet.)
M:Margin(0.2to0.5)
ldrive =(Q1+lQ2l)xf
Q1:Gatechargeatthetimeofpositivebias(ReadfromthecharacteristicdiagramregardingthegatechargeintheIGBTdata
sheet.)
Q2:Gatechargeatthetimeofnegativebias(ReadfromthecharacteristicdiagramregardingthegatechargeintheIGBTdata
sheet.)
f:Switchingfrequency
ForISAHAYAELECTRONICSgatedriverswhichcontaingatepowersupplies,calculategateaveragecurrent(ldrive)withthe
formulabelow.Inthedatasheetsofthegatedrivershavingbuiltingatepowersupplies,themaximumvalueofthegateaverage
currenthasbeenspecified.
ldrive =(Q1+lQ2l)xf
Q1:Gatechargeatthetimeofpositivebias(ReadfromthecharacteristicdiagramregardingthegatechargeintheIGBTdata
sheet.)
Q2:Gatechargeatthetimeofnegativebias(ReadfromthecharacteristicdiagramregardingthegatechargeintheIGBTdata
sheet.)
f:Switchingfrequency
IGBTGateChargevs.GateVoltageCharacteristics
VGE
(V)
15V

Gatecharge

Q2

Negativebias
voltage
Q1

Derating byPowerConsumptionorGateAverageCurrent
Thegatedriverneedsderating bypowerconsumptionorgateaveragecurrent.
RegardingISAHAYAELECTRONICSproducts,derating hasbeenspecifiedwithpowerconsumption(forproductswhichdonotcontain
gatepowersupplies)orgateaveragecurrent(forproductswhichcontaingatepowersupplies).Thedatasheetsoftheproducts
presentcharacteristicdiagramswhichshowpowerconsumptionvs.ambienttemperaturecharacteristicsorldrive vs.Ta
characteristics.Thefollowingcalculationresults,whichdependonuseconditions,havetobewithinthederating curve.
Powerconsumptionofaproductnothavingabuiltingatepowersupplycanbecalculatedwiththeformulabelow:
Pd =(VCC+lVEEl)x(ldrive +lcc)
VCC:Positivebiaspowersupplyvoltageofgate
VEE:Negativebiaspowersupplyvoltageofgate
ldrive:Gateaveragecurrent
lcc:ConstantcurrentconsumptionoftheIGBTdriver(Readfromthecharacteristicdiagramregardingthecurrentconsumptionvs.
powersupplyvoltagecharacteristicsinthedatasheet.)
ldrive =(Q1+lQ2l)xf
Q1:Gatechargeatthetimeofpositivebias(ReadfromthecharacteristicdiagramregardingthegatechargeintheIGBTdata sheet.)
Q2:Gatechargeatthetimeofnegativebias(ReadfromthecharacteristicdiagramregardingthegatechargeintheIGBTdata
sheet.)
f:Switchingfrequency
Thegateaveragecurrentofaproducthavingabuiltingatepowersupplycanbecalculatedwiththeformulabelow:
ldrive =(Q1+lQ2l)xf
Q1:Gatechargeatthetimeofpositivebias(ReadfromthecharacteristicdiagramregardingthegatechargeintheIGBTdata sheet.)
Q2:Gatechargeatthetimeofnegativebias(ReadfromthecharacteristicdiagramregardingthegatechargeintheIGBTdata
sheet.)
f:Switchingfrequency

11

GateResistance
Forthegateresistance,choosetheonewhichallowsthepowervaluewhichiscalculatedwiththeformulabelow:
Pd =ldrive (VCC+lVEEl )
Pd:Gateresistancetoleranceloss
ldrive:Gateaveragecurrent
VCC:Positivebiaspowersupplyvoltageofgate
VEE:Negativebiaspowersupplyvoltageofgate
Calculategateaveragecurrentldrive withtheformulabelow:
ldrive =(Q1+lQ2l)xf
Q1:Gatechargeatthetimeofpositivebias(ReadfromtheIGBTdatasheet.)
Q2:Gatechargeatthetimeofnegativebias(ReadfromtheIGBTdatasheet.)
f:Switchingfrequency
Thegateresistancevalueistobedetermined,basedonthevaluepresentedinthedatasheetoftheIGTBtobeused.
Generally,astheresistancevalueismadesmaller,theswitchingnoiseoftheIGBTandthesurgevoltageofthe
collectorbecomelarger:however,theswitchinglossintheelementdecreases.Astheresistancevalueismadelarger,
theswitchingnoiseandthecollectorsurgevoltagebecomesmaller:however,theswitchinglossintheelement
increases.
Generally,aresistancevaluelargerthantheminimumvalueindicatedbythemanufacturerischosentosuppressthe
switchingnoiseandcollectorsurgevoltage.
Regardingthegatedriver,theminimumvalueofthegateresistancehasbeenindicatedintheelectriccharacteristics
columnsonthedatasheets.Chooseavaluewhichislargerthantheindicatedone.
Thepeakgatecurrentcanbecalculatedwiththeformulabelow:

Igpeak =

VCC+ lVEEl
(RG+RG_in +)

Igpeak Peakgatecurrent
VCC Positivebiaspowersupplyvoltage
VEENegativebiaspowersupplyvoltage
RGExternalgateresistancevalue
RG_in GateresistancevalueintheIGBTmodule
Factorssuchasgate,emitterwiringinductance,andgatedriveroutputTr switchingdelay

RG_in differsdependingontheIGBTmodulemodelandmaynotbeindicatedinthedatasheetoftheIGBT.
Itisdifficulttocalculate accurately,andthustheformulabelowcanbeusedforapproximatecalculation.

Igpeak =

VCC+ lVEEl
RG

A*A:0.4to0.8

Eventually,itisnecessarytocheckwithanactualproductthatthepeakvalueofthegatecurrentdoesnotexceedthe
maximumratingoftheoutputpeakcurrentofthedriver

12

GateDriverSelectionGuide

WhenchoosinganISAHAYAELECTRONICSIGBTdrivermodel,determinethefollowingitemsfirst.
IsolationVoltage
DeterminebasedontheisolationvoltageofthepackageoftheIGBTmoduletobeused.
Outputpeakcurrent
ChoosesothatthepeakvalueofthegatecurrentoftheIGBTmoduledoesnotexceedthemaximumratingofthe
outputpeakcurrentofthegatedriver.
Thepeakgatecurrentcanbecalculatedwiththeformulabelow:
Igpeak =

VCC+ lVEEl
(RG+RG_in +)

Igpeak Peakgatecurrent
VCCPositivebiaspowersupplyvoltage
VEENegativebiaspowersupplyvoltage
RGExternalgateresistancevalue
RG_in GateresistancevalueintheIGBTmodule
Factorssuchasgate,emitterwiringinductance,andgatedriveroutputTr switchingdelay
RG_in differsdependingontheIGBTmodulemodelandmaynotbeindicatedinthedatasheetoftheIGBT.
Itisdifficulttocalculate accurately,andthustheformulabelowcanbeusedforapproximatecalculation.

Igpeak =

VCC+ lVEEl
RG

A*A:0.4to0.8

Eventually,itisnecessarytocheckwithanactualproduct.Ifthemaximumratingoftheoutputpeakcurrentof
thedriverisexceeded,itisnecessarytolowertheexternalgateresistancevalueorchangethegatedriverto
theonewhoseoutputcurrentisonelevelhigher.
Bychoosingadriverwhoseoutputpeakcurrentvalueislargerthanrequired,higherflexibilityisallowedfor
externalgateresistancevalueselection.
Shortcircuitprotectioncircuitbuiltin/notbuiltin
TheISAHAYAELECTRONICSIGBTdriverswithsomeexceptionscontainshortcircuitprotectioncircuits.Some
IGBTshavenotbeenwarrantedbytheirmanufacturers.Thoseproductsmaybedamagedwhenshortcircuit
occurs,evenifashortcircuitprotectioncircuitisused:youmayuseadriverwhichdoesnotcontainashort
circuitprotectioncircuitordeactivatetheprotectionfunctionofadriverwhichcontainsashortcircuitprotection
circuit.Forthemethodfordeactivatingtheprotectionfunction,seeMethodfordeactivatingtheshortcircuit
protectioncircuitdescribedlater.
Gatepowersupplybuiltin/notbuiltin
Determinewhichistobechosenbetweenaproductthatcontainsagatepowersupplyandaproductthatdoes
notcontainit.Choosingaproductthatcontainsagatepowersupplyreleasesyoufromtheburdenofpower
supplydesignandalsoeasescircuitboarddesign.Ifintendingtodesignapowersupplyonyourown,choosea
productwhichdoesnotcontainapowersupply.
Softshutdownspeedadjustmentatthetimeofshortcircuitprotectionactivation
Theproductswhichcontainshortcircuitprotectioncircuitsareoriginallyequippedwithasoftshutdownfunction.
Productsequippedwithafunctionwhichdecreasesthespeedfurtherarealsoavailable.Thisfunctioniseffective
tosuppresscollectorsurgevoltagewhichbecomesespeciallylargewhenshortcircuitcurrentisshutdownina
largecapacityIGBT(1000Aclassorhigher).
Numberofbuiltindrivecircuits
Whilemostoftheproductscontainasinglegatedrivecircuit,someproductscontaintwogatedrivecircuits.

Fromtheproductlistonthenextpage,chooseanappropriatemodel,basedonthespecificationsandfunctions
determinedabove.

13

IGBTDriverProductList

Yesinthetabledesignatesthatthemodelsupportstherelevantitem.
BuiltinGatePower
ShortCircuit
Supply
Protection
(Maximumgateaverage
Circuit
currentpercircuit)

SoftShutdownSpeed
AdjustmentattheTime
ofShortCircuit
ProtectionActivation

Numberof
BuiltinDrive
Circuits

Yes

1
1
1
1
1
1

Yes

2.5

Yes

2500

Yes

VLA542

2500

Yes

VLA546

4000

Yes

Yes

VLA551
VLA551K
VLA567
VLA500

2500
4000
2500
2500

5
5
8
12

Yes
Yes
Yes
Yes

Yes100mA)
Yes(100mA)
Yes(100mA)
Yes(210mA)

Yes
Yes
Yes
Yes

1
1
2
1

VLA502

2500

12

Yes

Yes(210mA)

Yes

VLA500K
VLA552

4000
4000

12
24

Yes
Yes

Yes(210mA)
Yes(210mA)

Yes
Yes

1
1

VLA554

4000

24

Yes

Yes(210mA)

Yes

TypeName

Isolation
Voltage
(Vrms)

Output
Peak
Current
(A)

VLA507
VLA513
M57159L
M57959AL
M57962AL
M57962CL

2500
2500
2500
2500
2500
2500

3
5
1.5
2
5
5

Yes
Yes
Yes
Yes

VLA520

2500

VLA531

2500

VLA541

Notes

Builtinoptocoupler
foralarm
Protectioncircuit
pulsebypulsereset
Compatiblewith
M57959AL
Compatiblewith
M57962AL
Compatiblewith
M57962CL

Highspeedmodelof
VLA500

Forfiberoptic
interface

*ProductswhosetypenamesstartwithM5begantobesoldmanyyearsago.Whilestopoftheirproductionisnot
scheduledasofAugust2014,itisrecommendedtochooseproductswhosetypenamesstartwithVLA.
Forsomeoftheproductslistedinthetableabove,circuitboardsforevaluationareavailable.Seethetablebelowfortheutilization.
Allofthelistedproductscontainagatepowersupply.
IGBTNonMountableDriveUnitProductList

Yesinthetabledesignatesthatthemodelsupportstherelevantitem.

Isolation Isolation ShortCircuit

MaximumGate
SoftShutdownSpeedAdjustment Numberof
attheTimeofShortCircuit
BuiltinDrive
Voltage Voltage Protection AverageCurrentper
Circuit
ProtectionActivation
Circuit
Circuits
(Vrms)
(Vrms)

TypeName

BuiltinHIC

GAU205S15252

2500

90mA

VLA513/VLA106

GAU205P15252A

2500

Yes

85mA

VLA542/VLA106

GAU208P15252

2500

Yes

100mA

Yes

VLA567

GAU205P15402

4000

Yes

100mA

Yes

VLA551K

GAU212S15255

2500

12

210mA

VLA502

GAU212P15255

2500

12

Yes

210mA

Yes

VLA500

GAU405P15252

2500

Yes

100mA

Yes

VLA551

GAU605P15252

2500

Yes

100mA

Yes

VLA551

*VLA106intheBuiltinHICcolumninthetableisanHICforgatepowersupply
ISAHAYAELECTRONICShascommercializedHICcenteredbuiltintypedriveunits,forspecificIGBTmodules.Becarefulthat
theseunitssupportonlycertainIGBTmodules.
IGBTMountableDriveUnitProductList
TypeName
VLA53601R

Yesinthetabledesignatesthatthemodelsupportstherelevantitem.

Isolation Output ShortCircuit

MaximumGate
NumberofBuilt
Voltage
Peak
Protection AverageCurrentper
inDriveCircuits
(Vrms) Current(A)
Circuit
Circuit
2500

Yes

BuiltinHIC

SupportingIGBT

83mA

VLA520/VLA106

MitsubishiNX2in1
EconoDual

VLA55301R

4000

24

Yes

210mA

VLA552

CM2500DY24S

VLA55302R

4000

24

Yes

210mA

VLA552

CM1800DY34S
CM2500DY24S

VLA55501R

4000

24

Yes

210mA

VLA552

VLA55502R

4000

24

Yes

210mA

VLA552

CM1800DY34S

VLA55901R

4000

24

Yes

210mA

VLA552

PrimePack 1200Vseries

VLA55902R

4000

24

Yes

210mA

VLA552

PrimePack 1700Vseries

14

InputGateSignalDriveCircuit
FormostoftheISAHAYAELECTRONICSIGBTdrivers,thegatesignalinputsectionisequippedwithanoptocouplerforthe
purposeofelectricalisolationbetweentheinputandoutputsides:thiscanbeidentifiedwiththefunctionblocksinthe
productdatasheets.
WhentheinputLEDisturnedon,thegateoutputisturnedon.ForadrivecircuitwhichcausesthisONcurrenttoflow,the
internalresistanceissetsothatappropriateamountofcurrentflowswhendirectlydrivenbyaCMOStypeIC,at5Vpullup
powersupplyvoltage.Therefore,anexternallimitingresistorisnotneededtodrivewitha5Vcircuit.Ifitisabsolutely
necessarytodrivewitha15Vcircuit,anexternallimitingresistorneedstobeattachedasshowninthediagrambelow.
ThefunctionblockdiagramsonthedatasheetsoftheindividualproductsshowlimitingresistancevaluesoftheinternalLED
current.SetanexternalresistancevaluesothattheLEDcurrentfallsintherangerecommendedasanelectricalcharacteristic
inthedatasheets.
AsanICwhichdrivesLEDcurrent,itisnotrecommendedtousetheonewhoseoutputisopencollectororopendraintype:
onthesetypes,theterminalvoltagebecomesunstablewhenthestatusisOFF.UseatotempoleoutputtypehavingCMOS
output,suchasHC04.
Regardinggatesignalwiringpattern,maketheareasurroundedbywiringassmallaspossibletominimizetheeffectof
electromagneticinductionnoise:thisisalsotrueofwiringfromtheCPUtothedriveIC.

RepresentativeHIC:VLA542/VLA541/VLA567

CasewherepulluplinevoltageVIN=5V

Vf 1.5V

VCC

VIN:5V
HC04etc.

1k

VIN

PC

Detection
Latch

Gatesignalfrom
theCPU

(Note)

Interface

IN1

Gateshutdown
F.O.

240

IF:12~13mA

Vo

Timer

VEE

VoL:Approx.0.5V
(HC04)

RepresentativeHIC:VLA542/VLA541/VLA567
CasewherepulluplinevoltageVIN=15V
Vf 1.5V

VIN:15V

TotempoleoutputtypeIC
M81711FP,MAX626 etc.
Gatesignalfrom
theCPU

VCC
Rout

VIN

1k

PC

Detection
Latch

(Note)
IF:12~13mA

Interface

IN1

Vo

Timer
240

Gateshutdown
F.O.

VEE

IF=(151.5VoL)/(240+Rout) *AdjusttheRoutsothattheLEDcurrentis12to13mA.

Note:Designthewiringpatternsothattheareasurroundedbytheinputsignallinebecomesassmallas
possibletominimizetheeffectofelectromagneticinductionnoise.

15

WiringforGate,EmitterandPowerSupply
RegardingIGBTgateandemitterwiring,minimizetheeffectofelectromagneticinductionnoiseby,forexample,connectingby
meansoftwistedpairwires.Designthewiringpatternsothattheareasurroundedbythegatedriverpowersupplywiring
becomesassmallaspossible.Especiallymakeeveryefforttoplacepowersupplyvoltagecompensationcapacitorsverycloseto
theVCCandVEEterminalsofthegatedriver.

VCC

Gatedriver

Twistedpairwires

VEE

Powersupplyvoltagecompensationcapacitor

MethodforDeactivatingShortCircuitProtectionCircuit
MostoftheISAHAYAELECTRONICSIGBTdriverscontainashortcircuitprotectioncircuit.Theprotectioncircuitcanbe
deactivatedwiththefollowingmethodinacasewhereitneednotbeusedbecauseofinitialevaluationorfordesign
convenience.
Asshowninthediagrambelow,connectthedetectionterminaltotheGNDlevelofthegatepowersupplyviaa4.7kresistor. At
thistime,FRDforconnectionfromthedetectionterminaltotheIGBTcollectorandprotectionzener diodearenotneeded.
Moreover,thealarmoutputterminalcanbemadeopen.
Shortcircuitprotectioncircuit

Vcc

Detection terminal

4
Latch
14

Detection
circuit

1
4.7k
1/4W

Timerand
reset
circuits
Interface and
amplifier

Optocoupler
13

5
Gate
shutdown
circuit

Vo

RG

8
Alarm output terminal
6

VEE

ExampleofVLA54201R(representativemodel)

16