14ELN15/2s

USN

First / Second Semester B.E. Degree Examination, June / July 2015

Basic Electronics
Time: 3 hrs.

Max. Marks:100
e

Note: Answer any FIVE full questions, selecting ONE question from each part.

la.

PART . A
(05 Marks)
Draw and explain V - I characteristics of a Germanium Diode.
b. Find the value of the series resistance R, required to drive a forward current of l.25mA
through a Germanium diode from a 4.5V battery. Write the circuit,' iagram showing all the

value.

{-};,,,

iJ

(04 Marks)

With neat diagram, explain the working of a half wave ibbffier along with relevant

d.
a.
b.

c.

(07 Marks)
waveforms.
Discuss in brief clipping circuit. Explain the working of flfidsitive clipper with neat circuit
(04 Marks)
diagram and relevant
.1

Explain the working of a full wave rectifier B$#.& 4 diodes with neat diagram. Also derive
(10 Marks)
the expressions for Ia. and Ir-, of afull wave*feflifier.
(04 Marks)
Discuss in brief clamping circuit. Explain yo'fking of a negative clamper.
(06 Marks)
Distinguish between Zener and Avalaq-rtQe'breakdown.
-.

a.

"

waveforms

*l
'-*o*T

-B

Calculate the value of Ic, Ie aqApEtfor a transistor with cra. = 0.98 and Is = t20pA.

c.

(06 Marks)
u,.^*u"r-=
For the base bias circuit*.4\S"'.L 18V, R. =2.2KQ, , RB = 470kO, hr. = 100 and Vnr = 0.7V.
(08 Marks)
Find In, Is and Vce. D*$y"'the DC load line and indicate the Q point.
(06 Marks)
Discuss the ideal c-t-r"ffig"Cteristics of an operational amplifier.

a.

{"
Explain the -rroftdie follower circuit using operational amplifier. Mention its important

b.

:"-

t,l

propertresj
propert'res;;{.1"
,u*{7,

(05 Marks)

adder circuit using Op

amp to obtain afl output voltage of
fftVr + 0.5V2 + 2Y31,
rl, where Vr, Vz and V3 are input voltages. Draw the circuit

Design 1:"@"
dfi;

(08 Marks)

a voltage divider bias circuit to operate from a 12V supply with V6s = 3V, Vn = 5V
(07 Marks)
= lmA, VeB = 0.7V.

-*w-

dlhi
.""q

-\L%*
N

. H"rffi*u

PART. C

a.

With the help of a diode switching circuit and truth table explain the operation of an AND

b.

gate and OR gate.

State and prove Demorgan's theorem for three variables.

c.

(06 Marks)
(06 Marks)

With truth table and logical expressions, give the design of a full adder circuit. Realize the
(08 Marks)
circuit using i) Basic gates and ii) NAND gates.

a. Perform the following

i)

iv)

conversions :
(1234.56)8= (?)ro ii) (10110101001.101011)2 = (?)16
(532.65)ro = (?)ro
v) (ABCD.EF)6 = (?)a.
I of 2

iii)

(988.86)10 = Q)z
(05 Marks)

14ELNL5/25

b. i) Subtract (1000.01)2 from (1011.10)2 using 1's and 2's complement method.
ii) Add (7 A8.67)rc with (15C.71)ro.
c. Design a half adder circuit andrealize using Basic gates and NAND gates.
d. What are Universal gates? Realise AND and OR gate using Universal gates.

(05 Marks)
(05 Marks)
(05 Marks)
,{ut

PART . D

!,

ri:qi.-

t
,(ffiMartrsl
7a. Distinguish between aLatchand flipflop.
b. Explain i) See beck effect ii) Peltier effect and iii) Thomson effect. ,t*T0b Marks)
c. Explain the architecture of 8085 microprocessor, with neat diagram.
, } {to Marks)
*

ia

a. Explain the working of a LVDT with neat diagram.

-*.%.*
b. List the difference between a microprocessor and micro controller. ft\*)
c. Explain the working of a R - S flipflop with relevant circuit andffitable.
PARr

a. What is Modulation?
b.

c.

Efor maffiion
r,,ffi^
in

Mention some of the need

Give the comparison between AM and FM.

With block diagram, explain the workingot a

!'#i:'t '

Lh,fi

cffilqr

,;

(06 Marks)
(08 Marks)
(06 Marks)

communication system.
(06 Marks)

(O8Marks)

mobile communication sYstem.

(06 Marks)

10 a. Define Amplitude modulation

and derixe the expression

for AM wave with

relevant

(08 Marks)

b.
c.

waveforms. Draw the frequency spep,Jfurg.

(06 Marks)
With neat diagram, explain the wpffiffif a_telephone system.
a
carrier of
modulate
x
amplitude
am
is
used
to
500)t
An audio freqyency signal t0
"ffi$Pn
50 sin(2n x l0rt). Calculate .a\
i) Modulation index. *"6g,"

ii)

Sideband frequencieq\%

iii) Band width.

iv) Amplitude o{ eae#sideband.
v) Total powprffi'vered to a load of 6004.
vi) TransrqL@ efficiency.

of2

(06 Marks)

r
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I

10ELN1s/25

USN

I
I
I
I

First/Second Semester B.E. Degree Examination, June/July 2015

I
I

Basic Electronics
I

p Max. Marks:100

Time: 3 hrs.
Note: Answer ony FIWfull questions,
selecting at least two from each part

ci

o
P

g(n
L

-A
I a. Choose the correct answers for the following :
i) The reverse saturation current of germanium
PART

'd

(:)

0
r

.f

EP
O-.J'

ii)

Sa

Etn
aoil

c00
._1
.=N
cc$

iil)

EY
d'y'

o>

Bs

b.

raI

c.

()G)
*k

do

-\

botr
6(
vA
>9
P6
6Ed

5()
'Es
6a

d. 8.

-.
''"'

':.1'

- _t'
::"'l:''

''=

(04 Marks)

25'{ ii

diode at

A) 100 nA
B) 0.7A
D) lpA
c) 0.3.A
For every 1oC rise in temperature, the silicon diode foiward voltage drop decreased by
A)
D) 0.1pV/'C
The DC output voltage of a bridge rectifioX, having a total secondary peak voltage of

2mYl"C

V is _
A) 63.6 V
100

otr
do

B)z.l2mVloC C). nV/"C

volts

"-:

B) 31.8 v
D) 70.7 V
c)e0v
ir) Ideal value of voltage regulator for the power supply is _
D) zero
A) minimum
B) maximilr*
C) unit
With circuit and waveform, explain the *orking principle of a futt wave bridge rectifier and
(10 Marks)
derive an expression for average"ffid RMS value of current.
Design a zener diode voltage to meet the lollowing specification.
Unregulated DC input voltafe V; : 10 V t 20 V
Regulated DC output vottage Vs:5 V
Minimum zefiet curte it z*6 : 5 mA
Maximum ;zenet curient I2^u*:80 mA.
(06 Marks)
Load current Ir:20 mA.
'l:'1'

tro.
o.'
o .-:

2 a.

-!
o=
to
i, qE
sh

eE
>. q=
hoe

t50
.rd
o=
o;\

tr;

(,)
\r<

iil)

^.F

-i
oo

iv)

c.i

z
I

(d

ti

o.
d

base

.=,oi
ii)

!o

=o
->i

(04 Marks)
correct answers for the following :
i\""--* a properly biased PNP transistor, some of the holes from the emitters
A) recombine with electron in the
B) recombine in the emitter it self
C) pass through the base to the collector D) are stopped by the junction barrier
The current amplification factor u6. is given by
A) IclIB
B) IclIB
D)IBAC
c) IB/IE
The output resistance of transistor CB configuration is
A)1KO
B)0o
D)100 o
c)MO
The following relationship between u and B are correct EXCEPT
A) 0: ul
B) cr: P/l
D) 1-o(:1/1 + p.
C) cr: Fll+
With circuit and characteristic curve, explain the input and output characteristic curve of
(12 Marks)
transistor CE configuration.
The reverse leakage current of the transistor when connected in CB configuration is 0.1 plA.
(04 Marks)
While it is 16 pA when it is in CE configuration calculate croc and poc.

Cho,oge the

c'

l-u

-B

I of2

3 a.

10ELN1/25
Choose the correct answers for the following
The operating point is on the

(04 Marks)

i)
B) on the DC load line
, A) output characteristic curve
D) input characteristic curve
C) transfer characteristic curve
ii) The maximum peak to peak output voltage swing is obtained when the Q point of circuit
is located
B) near cutoff point
A) near saturation point
D) at least on the load line
C) at the centre of the DC load line
biasing cjrcuit
iii) The more stable operating point for transistor is obtained from the
bi$s
circuit
B)
voltage
divider
A) fixed bias circuit
.,,:..;
t.:!a
D) reverse bias
C) collector to base bias
,: ,1.
iv) In a transistor temperature sensitive parameter are
D) Vnf and Iceo.
C) Vcc and Ic
B) Vss and Ir
A) Vcc and Ie
Write the circuit diagram for :i) voltage divider bias circuit ii) fixed bfgs circuit. (10 Marks)
For the circuit shown in Fig. Q3(C). Find the range of operating poinffien hpsl6in; : 50,
(06 IVIarks)
hre(,,u*) : 200. Assume Si transistor.
.,

b.
c.

tt:

+ rI v
27ok L ., ro

*--)
LJ
l--s

{
Q3(c)
(04 Marks)
4 a. Choose the correct answers for the following )',:;j;+..
i) In an SCR, the function of the gate is to.:4A) to control the SCR current
'
D) reduce the reverse break down voltage
C) turn OFF the SCR
ii) The unijunction transistor has
Fig.

B) two base and one emitter

D) anode cathode and two gates

A) anode, cathode and gate

C) two anode and one gat,F "' ''

iii) A UJT used as a

,r11,,,",,

A) amplifier

B) re'laxation

oscillator

C) rectifier

D) inverter

iv) A FET consists of

D) all of the above.
C) gate
A) source ..,.=,.--1, B) drain
Sketch a 90o p$*$e,,Control circuit for an SCR and draw the load waveform. Explain the
',,il' '

b.
c.

5a.

operation of the dilcuit.

(08 Marks)

Drawand

(08 Marks)

ldinthetypicaldrain characteristic ofanN*channel JFET withVgs:0.

PART - B
1.,''r;.=
(04 Marks)
correct answers for the following
power
point is
i)'.,, an amplifier frequency response curve, the gain of the amplifier at half
C,hqbJe the

ii)
iii)

B) 1.41 of maximuni value of gain

A) 0.707 of maximum value of gain
gain
D) 3.14 of maximum value of gain
C) 1.11 of maximum value of
Band width of an amplifier is the range of frequency over which the gain is _
C) gain is zero
D) gain constant
A) gain is maximum B) gain is one
The electrical component of tank circuit are

A)R,C

B)R,L

C)R,C,L

D)L,C

iv)

b.

For sustaining oscillations in an oscillator circuit

B) phase shift should be 0'
A) feedback factor should be unity
D) both A and B.
C) feedback should be negative
of
each
component of RC coupled amplifier.
explain
the
significance
With a circuit diagram,
(06 Marks)

c.
d.

(06 Marks)
With a circuit diagram, explain the operation of a Hartley oscillator.
In a colPitts oscillator, Cr : 100 pF and Cz: 60 pF. Fihd the value of L, if the frequency of
(04 Marks)
oscillation is 40 KHz.
2 of3

6 a.

10ELN1/25
Choose the correct answers for the following
Voltage gain of an voltage follower is

i)

ii)

(04 Marks)

B)*

A)0

c)1

D)

The meaning of infinite band width of an op-Amp is

A) it allows the signal with 50 Hz frequency
B) it allows all the frequency from 0 to .nHz
C) it allows the signal with OHz frequency
D) it altows the signal with frequency
The ideal characteristic of an op-Amp are

105

ooHz.

iii)

A) R; : m,

,,.f,

:0, Ar: oo, CMRR: oo

B) Ri : 0, R4 : oo, Ar: 0, CMRR: 0
C) & :0, Ro :0, Ar: 1, CMRR: m
D) Ri : oo, R4 : 1, Av : 0, CMRR : oo.
Ro

.,,',,.

.,

iil'

i';

''

:'

iv) In a non-inverting amplifier circuit, Rr: 360 K, Rr :

A) 100
B) 1000
C) 4

,..-,str.'n"..il

120 K. The",:.,g n ofthe amplifier is

* ., -.-

D)2.

(08 Marks)
Explain how an op-Amp can be used as a inverting summer. , ,,],
A 10 mV, 5 KIlz sinusoidal signal is applied to input of an op-Amp integrator circuit for
u*
(08 Marks)
which R: 100 K, C: I pF. Find the output voltage.

b.

c.

i'

7 a.

(04 Marks)
Choose the correct answers for the following
power
in a modulated wave is
A 400W carrier is modulated to a depth of 7St(n,The total

i)

ii)
iii)

W
is

A) 600
B) 500
The BCD equivalent decimal 14
A)
B) 000r01Q0
The l5's complement of (ABC)16 is

00101010

A) CAB

,,

i-l'ir,,C) 498

*=-

D) 0.5 W

"''-

B) CDA,,,

c)

10010101

D) 01000001

c)

s43

D) ACB

c)

1.011

D) 0.10001

iv) The binary number of (0.56)iOl,iS

A)
b.

c.

d.

0.01010

0.10101

i)

(06 Marks)

i)
ii) (As1
8a.

-E)

Derive an expression for outjrut power of an AM transmitter.

Perform the following :
(ABC),0 + (ABCoE)ro : (?)ro
ii) Using 1's corr-$l-ement (1 1010)2 - (10000)2 (?)z
Perform the follo,wing :
(675t5$-)l',= (?)1s

(06 Marks)

;:(?)2.

(04 Marks)

correct answers for the following :

it.,,l{he Boolean expression x* yz is equal to
C$C[i"iie the

,i+, A)x+y+z
ii)

B)(x+y)(x+z)

(04 Marks)

C)(x+y)z

D) (x + z)y

c)1+B

D)0

The Boolean expression A + AB is equal to

A)B

B)A

iii) In EX-OR gate, if the inputs are logically same then the output is
A)1
B)A
D)0
C)B
iv) The universal gates are
A) ANDandOR B) NOTandNOR C) NANDandNOR D) EX-ORandEX-NOR.
Simplifi the Boolean expression

y: AB + A(B + C) +B(B + C).

c.
d.

(04 Marks)

Implement Y: ABCD using, two input NOR gates.

Explain the operation
of Fulladder and implement it using gates.
,1.

,t ,f ,f *

of3

(06 Marks)

(06Marks)