The document describes the LF353 dual operational amplifier from Fairchild Semiconductor. It provides specifications for electrical characteristics and mechanical dimensions of the JFET input op amp, which offers features such as low offset voltage and current, wide bandwidth, and high slew rate.
The document describes the LF353 dual operational amplifier from Fairchild Semiconductor. It provides specifications for electrical characteristics and mechanical dimensions of the JFET input op amp, which offers features such as low offset voltage and current, wide bandwidth, and high slew rate.
The document describes the LF353 dual operational amplifier from Fairchild Semiconductor. It provides specifications for electrical characteristics and mechanical dimensions of the JFET input op amp, which offers features such as low offset voltage and current, wide bandwidth, and high slew rate.
The document describes the LF353 dual operational amplifier from Fairchild Semiconductor. It provides specifications for electrical characteristics and mechanical dimensions of the JFET input op amp, which offers features such as low offset voltage and current, wide bandwidth, and high slew rate.
Features Description Internally trimmed offset voltage: 10mV The LF353 is a JFET input operational amplifier with an Low input bias current: 50pA internally compensated input offset voltage. The JFET input Wide gain bandwidth: 4MHz device provides wide bandwidth, low input bias currents and High slew rate: 13V/s offset currents. High Input impedance: 1012
Parameter Symbol Value Unit Power Supply Voltage VCC 18 V Differential Input Voltage VI(DIFF) 30 V Input Voltage Range VI 15 V Output Short Circuit Duration - Continuous - Power Dissipation PD 500 mW Operating Temperature Range TOPR 0 ~ +70 C Storage Temperature Range TSTG -65 ~ +150 C
RS=10K - 5.0 10 mV Input Offset Voltage VIO 0 CTA+70 C - - - - Input Offset Voltage Drift VIO/T RS=10K 0 CTA+70 C - 10 - V/ C - 25 100 pA Input Offset Current IIO 0 CTA+70 C - - 4 nA - 50 200 pA Input Bias Current IBIAS 0 CTA+70 C - - 8 nA Input Resistance RI - - 1012 - VO(P-P) = 10V 25 100 - V/mV Large Signal Voltage Gain GV RL = 2K 0 CTA+70 C 15 - - - Output Voltage Swing VO(P_P) RL = 10K 12 13.5 - V Input Voltage Range VI(R) - 11 15/-12 - V Common Mode Rejection Ratio CMRR RS 10K 70 100 - dB Power Supply Rejection Ratio PSRR RS 10K 70 100 - dB Power Supply Current ICC - - 3.6 6.5 mA Slew Rate SR GV = 1 - 13 - V/S Gain-Bandwidth Product GBW - - 4 - MHz f = 1Hz ~ 20KHz Channel Seperation CS - 120 - dB (Input referenced) RS = 100 nV/ Equivalent Input Noise Voltage VNI - 16 - f = 1KHz Hz pA/ Equivalent Input Noise Current INI f = 1KHz - 0.01 - Hz
Ordering Information Product Number Package Operating Temperature LF353N 8-DIP 0 ~ + 70C LF353M 8-SOP
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, and (c) whose failure to reasonably expected to cause the failure of the life support perform when properly used in accordance with device or system, or to affect its safety or effectiveness. instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
