TAS5715
TAS5715
TAS5715
1FEATURES
Audio Input/Output A
25-W Into an 8- Load From an 18-V Supply Benefits
50-W Support in PBTL Mode With 4- Load EQ: Speaker Equalization Improves Audio
Wide PVDD Range, From 8 V to 26 V Performance
Efficient Class-D Operation Eliminates DRC: Automatic Gain Limiter. Can Be Used
Need for Heatsinks As Power Limiter. Enables Speaker
Requires Only 3.3 V and PVDD Protection, Easy Listening
One Serial Audio Input (Two Audio Two-Band DRC: Set Two Different
Channels) Thresholds for Low- and High-Frequency
Content
I2C Address Selection via PIN (Chip Select)
Autobank Switching: Preload Coefficients
Supports 8-kHz to 48-kHz Sample Rate for Different Sample Rates. No Need to
(LJ/RJ/I2S) Write New Coefficients to the Part When
Headphone PWM Outputs Sample Rate Changes
Dedicated Pin for External Autodetect: Automatically Detects
Headphone-Amplifier Shutdown Sample-Rate Changes. No Need for
Single-Filter PBTL Support External Microprocessor Intervention
Audio/PWM Processing Single-Filter PBTL Support Reduces BOM
Independent Channel Volume Controls With Cost
24-dB to Mute Thgermal Dissipation, Improving System
Independent Headphone Volume Stability
Programmable Two-Band Dynamic Range
Control DESCRIPTION
Up to Eight User-Programmable Biquads The TAS5715 is a 25-W, efficient, digital audio-power
per Channel amplifier for driving stereo bridge-tied speakers. One
serial data input allows processing of up to two
Programmable Coefficients for DRC Filters discrete audio channels and seamless integration to
DC Blocking Filters and PWM DC Detect most digital audio processors and MPEG decoders.
CRC Checksum to Detect Biquad The device accepts a wide range of input data and
Coefficient Corruption data rates. A fully programmable data path routes
these channels to the internal speaker drivers.
General Features
Serial Control Interface Operational Without The TAS5715 is a slave-only device receiving all
clocks from external sources. The TAS5715 operates
MCLK
with a PWM carrier between a 384-kHz switching rate
Factory-Trimmed Internal Oscillator for and a 352-KHz switching rate, depending on the input
Automatic Rate Detection sample rate. Oversampling combined with a
Surface Mount, 48-Pin, 7-mm 7-mm fourth-order noise shaper provides a flat noise floor
HTQFP Package and excellent dynamic range from 20 Hz to 20 kHz.
Thermal and Short-Circuit Protection
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Copyright 2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TAS5715
SLOS645 AUGUST 2010 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
AVDD/DVDD AVCC/PVCC
OUT_A
LRCLK
Digital SCLK BST_A
Audio
Source MCLK LCBTL
BST_B
SDIN
OUT_B
2 SDA
I C OUT_C
Control SCL
BST_C
LCBTL
Control RESET BST_D
Inputs PDN
OUT_D
PLL_FLTP
Loop TPA6110A2
(1) (HP Amplifier)
Filter
PLL_FLTM
HPR_PWM
RC
Filter
HPL_PWM
A_SEL/HP_SD
B0264-12
(1)
See the TAS5715 User's Guide for loop-filter values.
FUNCTIONAL VIEW
OUT_A
2 HB
th FET Out
Serial 4 OUT_B
SDIN Audio S Order
Port Digital Audio Processor R Noise
(DAP) C Shaper
and OUT_C
PWM 2 HB
FET Out
OUT_D
Protection
Logic
Microcontroller
SDA Serial Based
Control System
SCL Control
Terminal Control
B0262-09
FAULT
4
FAULT Under-
voltage 4
Protection
Power
On
Reset
Protection AGND
and
I/O Logic
Temp.
Sense GND
VALID
Overcurrent Isense
Protection
BST_D
PVDD_D
PWM_D PWM Gate
Ctrl Timing OUT_D
Rcv Drive
PWM Controller
Pulldown Resistor
GVDD PGND_CD
Regulator
GVDD_OUT
BST_C
PVDD_C
PWM_C PWM Gate
Ctrl Timing OUT_C
Rcv Drive
Pulldown Resistor
PGND_CD
BST_B
PVDD_B
PWM_B PWM Gate
Ctrl Timing OUT_B
Rcv Drive
Pulldown Resistor
GVDD PGND_AB
Regulator
BST_A
PVDD_A
PWM_A PWM Gate
Ctrl Timing OUT_A
Rcv Drive
Pulldown Resistor
PGND_AB
B0034-06
2
I C Subaddress in Red
DAP Process Structure
59 0x51[1]
L 0x70
1BQ +
0x72 + 7BQ Vol1
+
Vol
0x52[0]
+
+
Vol
5
TAS5715
TAS5715
SLOS645 AUGUST 2010 www.ti.com
DEVICE INFORMATION
PIN ASSIGNMENT
PHP Package
(Top View)
PGND_CD
PGND_CD
PGND_AB
PGND_AB
PVDD_C
PVDD_C
PVDD_B
PVDD_B
OUT_C
OUT_B
BST_C
BST_B
48 47 46 45 44 43 42 41 40 39 38 37
OUT_A 1 36 OUT_D
PVDD_A 2 35 PVDD_D
PVDD_A 3 34 PVDD_D
BST_A 4 33 BST_D
HPR 5 32 GVDD_OUT
SSTIMER 6 31 VREG
TAS5715
HPL 7 30 AGND
PBTL 8 29 GND
AVSS 9 28 DVSS
PLL_FLTM 10 27 DVDD
PLL_FLTP 11 26 STEST
VR_ANA 12 25 RESET
13 14 15 16 17 18 19 20 21 22 23 24
LRCLK
MCLK
PDN
SCL
VR_DIG
SDIN
SDA
OSC_RES
DVSSO
AVDD
A_SEL
SCLK
P0075-10
PIN FUNCTIONS
PIN 5-V
TYPE (1) TERMINATION (2) DESCRIPTION
NAME NO. TOLERANT
AGND 30 P Analog ground for power stage
A_SEL 14 DIO This pin is monitored on the rising edge of RESET. A value of 0
makes the I2C dev address 0x54 and a value of 1 makes it 0x56.
This pin can be re-used after reset as external HP amplifer shutdown
signal.
AVDD 13 P 3.3-V analog power supply
AVSS 9 P Analog 3.3-V supply ground
BST_A 4 P High-side bootstrap supply for half-bridge A
BST_B 43 P High-side bootstrap supply for half-bridge B
BST_C 42 P High-side bootstrap supply for half-bridge C
BST_D 33 P High-side bootstrap supply for half-bridge D
DVDD 27 P 3.3-V digital power supply
DVSSO 17 P Oscillator ground
DVSS 28 P Digital ground
(1) Stresses beyond those listed under absolute ratings may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under recommended operation conditions are
not implied. Exposure to absolute-maximum conditions for extended periods may affect device reliability.
(2) 5-V tolerant inputs are PDN, RESET, SCLK, LRCLK, MCLK, SDIN, SDA, and SCL.
(3) Maximum pin voltage should not exceed 6.0V
(4) DC voltage + peak ac waveform measured at the pin should be below the allowed limit for all conditions.
(1) This data was taken using 1 oz trace and copper pad that is soldered directly to a JEDEC standard high-k PCB. The thermal pad must
be soldered to a thermal land on the printed-circuit board. See TI Technical Briefs SLMA002 for more information about using the
HTQFP thermal pad
(1) Continuous operation above the recommended junction temperature may result in reduced reliability and/or lifetime of the device.
ELECTRICAL CHARACTERISTICS
DC Characteristics
TA = 25, PVCC_x = 18 V, DVDD = AVDD = 3.3 V, RL= 8 , BTL AD Mode, fS = 48 KHz (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IOH = 4 mA
VOH High-level output voltage A_SEL and SDA 2.4 V
DVDD = 3 V
IOL = 4 mA
VOL Low-level output voltage A_SEL and SDA 0.5 V
DVDD = 3 V
VI < VIL ; DVDD = AVDD
IIL Low-level input current 75 mA
= 3.6V
VI > VIH ; DVDD =
IIH High-level input current 75 (1) mA
AVDD = 3.6V
Normal mode 56 85
3.3 V supply voltage (DVDD,
IDD 3.3 V supply current Reset (RESET = low, 26 40 mA
AVDD)
PDN = high)
Normal mode 40 85
IPVDD Supply current No load (PVDD_x) Reset (RESET = low, 5 13 mA
PDN = high)
Drain-to-source resistance, LS TJ = 25C, includes metallization resistance 110
(2)
rDS(on) Drain-to-source resistance, m
TJ = 25C, includes metallization resistance 110
HS
I/O Protection
Vuvp Undervoltage protection limit PVDD falling 7.2 V
Vuvp,hyst Undervoltage protection limit PVDD rising 7.6 V
OTE (3) Overtemperature error 150 C
(3) Extra temperature drop
OTEHYST 30 C
required to recover from error
OLPC Overload protection counter fPWM = 384 kHz 0.63 ms
IOC Overcurrent limit protection 4.5 A
IOCT Overcurrent response time 150 ns
Internal pulldown resistor at Connected when drivers are tristated to provide bootstrap
RPD 3 k
the output of each half-bridge capacitor charge.
(1) IIH for the PBTL pin has a maximum limit of 200 A due to an internal pulldown on the pin.
(2) This does not include bond-wire or pin resistance.
(3) Specified by design
tr tf
SCLK
(Input)
t(edge)
th1
tsu1
LRCLK
(Input)
th2
tsu2
SDIN
T0026-04
tw(H) tw(L) tr tf
SCL
tsu1 th1
SDA
T0027-01
SCL
th2 t(buf)
tsu2 tsu3
SDA
Start Stop
Condition Condition
T0028-01
RESET
tw(RESET)
2 2
I C Active I C Active
td(I2C_ready)
System Initialization.
2
Enable via I C.
T0421-01
NOTES: On power up, it is recommended that the TAS5715 RESET be held LOW for at least 100 ms after DVDD has
reached 3 V.
If RESET is asserted LOW while PDN is LOW, then the RESET must continue to be held LOW for at least 100 ms
after PDN is deasserted (HIGH).
1 1 PO = 5W
PO = 2.5W
PO = 2.5W
THD+N (%)
THD+N (%)
0.1 0.1
PO = 0.5W
PO = 1W
PO = 1W
0.01 0.01
0.001 0.001
20 100 1k 10k 20k 20 100 1k 10k 20k
Frequency (Hz) G001
Frequency (Hz) G002
Figure 6. Figure 7.
1 1
PO = 5W
PO = 5W
PO = 1W
THD+N (%)
THD+N (%)
0.1 0.1
PO = 1W PO = 2.5W PO = 2.5W
0.01 0.01
0.001 0.001
20 100 1k 10k 20k 20 100 1k 10k 20k
Frequency (Hz) G003
Frequency (Hz) G004
Figure 8. Figure 9.
1 1
f = 20Hz
f = 1kHz
THD+N (%)
THD+N (%)
0.1 0.1
f = 1kHz f = 20Hz
0.01 0.01
f = 10kHz
f = 10kHz
0.001 0.001
0.01 0.1 1 10 40 0.01 0.1 1 10 40
Output Power (W) G005
Output Power (W) G006
1 1
f = 20Hz
f = 1kHz
f = 1kHz
THD+N (%)
THD+N (%)
f = 20Hz
0.1 0.1
0.01 0.01
f = 10kHz
f = 10kHz
0.001 0.001
0.01 0.1 1 10 40 0.01 0.1 1 10 40
Output Power (W) G007
Output Power (W) G008
80
30 PVDD = 24V
70
PVDD = 18V
Output Power (W)
25
60
Efficiency (%)
THD+N = 10%
PVDD = 12V
20 50
PVDD = 8V
40
15
30
THD+N = 1%
10
20
5 RL = 8
10
T A = 25C
0 0
8 10 12 14 16 18 20 22 24 26 0 5 10 15 20 25 30 35 40
Supply Voltage (V) G009
Total Output Power (W) G010
NOTE: Dashed lines represent thermally limited region. NOTE: Dashed lines represent thermally limited region.
Figure 14. Figure 15.
CROSSTALK CROSSTALK
vs vs
FREQUENCY FREQUENCY
0 0
PO = 1W PO = 1W
-10 PVDD = 8V -10 PVDD = 12V
RL = 8 RL = 8
-20 T A = 25C -20 T A = 25C
-30 -30
Crosstalk (dB)
Crosstalk (dB)
-40 -40
-50 -50
-60 -60
Right to Left
-70 -70
Left to Right
-80 -80
Left to Right
-90 -90
Right to Left
-100 -100
20 100 1k 10k 20k 20 100 1k 10k 20k
Frequency (Hz) G011
Frequency (Hz) G012
-30 -30
Crosstalk (dB)
Crosstalk (dB)
-40 -40
-50 -50
-60 -60
Right to Left
-70 Right to Left -70
-80 -80
-90 -90
Left to Right Left to Right
-100 -100
20 100 1k 10k 20k 20 100 1k 10k 20k
Frequency (Hz) G013
Frequency (Hz) G014
THD+N (%)
0.1 0.1
PO = 1W PO = 1W
0.01 0.01
PO = 2.5W
0.001 0.001
20 100 1k 10k 20k 20 100 1k 10k 20k
Frequency (Hz) G021
Frequency (Hz) G022
1 1
f = 1kHz
f = 1kHz
THD+N (%)
THD+N (%)
0.1 0.1
f = 20Hz
0.01 0.01
f = 10kHz f = 10kHz
f = 20Hz
0.001 0.001
0.01 0.1 1 10 40 0.01 0.1 1 10 50
Output Power (W) G026
Output Power (W) G027
-30 -30
-40 -40
Crosstalk (dB)
Crosstalk (dB)
-50 -50
-60 -60
Right to Left
Right to Left
-70 -70
-80 -80
Left to Right
-90 -90 Left to Right
-100 -100
-110 -110
20 100 1k 10k 20k 20 100 1k 10k 20k
Frequency (Hz) G023
Frequency (Hz) G024
1 1
PO = 2.5W
PO = 5W
PO = 5W
PO = 2.5W
THD+N (%)
THD+N (%)
0.1 0.1
PO = 1W
0.01 0.01 PO = 1W
0.001 0.001
20 100 1k 10k 20k 20 100 1k 10k 20k
Frequency (Hz) G015
Frequency (Hz) G016
1 1
f = 1kHz
f = 20Hz
THD+N (%)
THD+N (%)
f = 20Hz
0.1 0.1
f = 1kHz
0.01 0.01
f = 10kHz f = 10kHz
0.001 0.001
0.01 0.1 1 10 50 0.01 0.1 1 10 40
Output Power (W) G017
Output Power (W) G018
60
Efficiency (%)
30 50
THD+N = 1% 40
20
30
20
10
10 RL = 4
T A = 25C
0 0
8 10 12 14 16 18 20 22 24 26 0 10 20 30 40 50 60
Supply Voltage (V) G019
Total Output Power (W) G020
NOTE: Dashed lines represent thermally limited region. NOTE: Dashed line represents thermally limited region.
Figure 30. Figure 31.
DETAILED DESCRIPTION
POWER SUPPLY
To facilitate system design, the TAS5715 needs only a 3.3-V supply in addition to the (typical) 18-V power-stage
supply. An internal voltage regulator provides suitable voltage levels for the gate drive circuitry. Additionally, all
circuitry requiring a floating voltage supply, e.g., the high-side gate drive, is accommodated by built-in bootstrap
circuitry requiring only a few external capacitors.
In order to provide good electrical and acoustical characteristics, the PWM signal path for the output stage is
designed as identical, independent half-bridges. For this reason, each half-bridge has separate bootstrap pins
(BST_x) and power-stage supply pins (PVDD_x). The gate drive voltages (GVDD_AB and GVDD_CD) are
derived from the PVDD voltage. Special attention should be paid to placing all decoupling capacitors as close to
their associated pins as possible. In general, inductance between the power-supply pins and decoupling
capacitors must be avoided.
For a properly functioning bootstrap circuit, a small ceramic capacitor must be connected from each bootstrap pin
(BST_x) to the power-stage output pin (OUT_x). When the power-stage output is low, the bootstrap capacitor is
charged through an internal diode connected between the gate-drive regulator output pin (GVDD_x) and the
bootstrap pin. When the power-stage output is high, the bootstrap capacitor potential is shifted above the output
potential and thus provides a suitable voltage supply for the high-side gate driver. In an application with PWM
switching frequencies in the range from 352 kHz to 384 kHz, it is recommended to use 33-nF ceramic capacitors,
size 0603 or 0805, for the bootstrap supply. These 33-nF capacitors ensure sufficient energy storage, even
during minimal PWM duty cycles, to keep the high-side power stage FET (LDMOS) fully turned on during the
remaining part of the PWM cycle.
Special attention should be paid to the power-stage power supply; this includes component selection, PCB
placement, and routing. As indicated, each half-bridge has independent power-stage supply pins (PVDD_x). For
optimal electrical performance, EMI compliance, and system reliability, it is important that each PVDD_x pin is
decoupled with a 100-nF ceramic capacitor placed as close as possible to each supply pin.
The TAS5715 is fully protected against erroneous power-stage turnon due to parasitic gate charging.
overloaded, a second protection system triggers a latching shutdown, resulting in the power stage being set in
the high-impedance (Hi-Z) state. The device returns to normal operation once the fault condition (i.e., a short
circuit on the output) is removed. Current limiting and overcurrent protection are not independent for half-bridges.
That is, if the bridge-tied load between half-bridges A and B causes an overcurrent fault, half-bridges A, B, C,
and D are shut down.
Overtemperature Protection
The TAS5715 has an overtemperature-protection system. If the device junction temperature exceeds 150C
(nominal), the device is put into thermal shutdown, resulting in all half-bridge outputs being set in the
high-impedance (Hi-Z) state and FAULT being asserted low. The TAS5715 recovers automatically once the
temperature drops approximately 30.
SSTIMER FUNCTIONALITY
SSTIMER is used to reduced turnon pop. This is used only in AD mode. The SSTIMER pin uses a capacitor
connected between this pin and ground to control the output duty cycle when exiting all-channel shutdown. The
capacitor on the SSTIMER pin is slowly charged through an internal current source, and the charge time
determines the rate at which the output transitions from a near-zero duty cycle to the desired duty cycle. This
allows for a smooth transition that minimizes audible pops and clicks. When the part is shut down, the drivers are
high-impedance and transition slowly down through a 3-k resistor, similarly minimizing pops and clicks. The
shutdown transition time is independent of the SSTIMER pin capacitance. Larger capacitors increase the start-up
time, whereas capacitors smaller than 2.2 nF decrease the start-up time. The SSTIMER pin should be left
floating for BD modulation.
PWM Section
The TAS5715 DAP device uses noise-shaping and sophisticated nonlinear correction algorithms to achieve high
power efficiency and high-performance digital audio reproduction. The DAP uses a fourth-order noise shaper to
increase dynamic range and SNR in the audio band. The PWM section accepts 24-bit PCM data from the DAP
and outputs two BTL PWM audio output channels.
The PWM section has individual-channel dc-blocking filters that can be enabled and disabled. The filter cutoff
frequency is less than 1 Hz. Individual-channel de-emphasis filters for 44.1- and 48-kHz are included and can be
enabled and disabled.
Finally, the PWM section has an adjustable maximum modulation limit of 93.8% to 99.2%.
For detailed description of using audio processing features like DRC, EQ, 3D, and bass boost, see the User's
Guide and TAS570X GDE software development tool documentation. Also see the GDE software development
tool for the device data path.
I2S Timing
I2S timing uses LRCLK to define when the data being transmitted is for the left channel and when it is for the
right channel. LRCLK is low for the left channel and high for the right channel. A bit clock running at 32, 48, or
64 fS is used to clock in the data. There is a delay of one bit clock from the time the LRCLK signal changes
state to the first bit of data on the data lines. The data is written MSB-first and is valid on the rising edge of bit
clock. The DAP masks unused trailing data-bit positions.
2
2-Channel I S (Philips Format) Stereo Input
32 Clks 32 Clks
SCLK SCLK
23 22 9 8 5 4 1 0 23 22 9 8 5 4 1 0
20-Bit Mode
19 18 5 4 1 0 19 18 5 4 1 0
16-Bit Mode
15 14 1 0 15 14 1 0
T0034-01
2
2-Channel I S (Philips Format) Stereo Input/Output (24-Bit Transfer Word Size)
24 Clks 24 Clks
SCLK SCLK
23 22 17 16 9 8 5 4 3 2 1 0 23 22 17 16 9 8 5 4 3 2 1
20-Bit Mode
19 18 13 12 5 4 1 0 19 18 13 12 5 4 1 0
16-Bit Mode
15 14 9 8 1 0 15 14 9 8 1 0
T0092-01
2
2-Channel I S (Philips Format) Stereo Input
16 Clks 16 Clks
SCLK SCLK
15 14 13 12 11 10 9 8 5 4 3 2 1 0 15 14 13 12 11 10 9 8 5 4 3 2 1
T0266-01
Left-Justified
Left-justified (LJ) timing uses LRCLK to define when the data being transmitted is for the left channel and when it
is for the right channel. LRCLK is high for the left channel and low for the right channel. A bit clock running at 32,
48, or 64 fS is used to clock in the data. The first bit of data appears on the data lines at the same time LRCLK
toggles. The data is written MSB-first and is valid on the rising edge of the bit clock. The DAP masks unused
trailing data-bit positions.
2-Channel Left-Justified Stereo Input
32 Clks 32 Clks
LRCLK
SCLK SCLK
23 22 9 8 5 4 1 0 23 22 9 8 5 4 1 0
20-Bit Mode
19 18 5 4 1 0 19 18 5 4 1 0
16-Bit Mode
15 14 1 0 15 14 1 0
T0034-02
24 Clks 24 Clks
LRCLK
SCLK SCLK
23 22 21 17 16 9 8 5 4 1 0 23 22 21 17 16 9 8 5 4 1 0
20-Bit Mode
19 18 17 13 12 5 4 1 0 19 18 17 13 12 5 4 1 0
16-Bit Mode
15 14 13 9 8 1 0 15 14 13 9 8 1 0
T0092-02
16 Clks 16 Clks
LRCLK
SCLK SCLK
15 14 13 12 11 10 9 8 5 4 3 2 1 0 15 14 13 12 11 10 9 8 5 4 3 2 1 0
T0266-02
Right-Justified
Right-justified (RJ) timing uses LRCLK to define when the data being transmitted is for the left channel and when
it is for the right channel. LRCLK is high for the left channel and low for the right channel. A bit clock running at
32, 48, or 64 fS is used to clock in the data. The first bit of data appears on the data 8 bit-clock periods (for
24-bit data) after LRCLK toggles. In RJ mode the LSB of data is always clocked by the last bit clock before
LRCLK transitions. The data is written MSB-first and is valid on the rising edge of bit clock. The DAP masks
unused leading data-bit positions.
2-Channel Right-Justified (Sony Format) Stereo Input
32 Clks 32 Clks
LRCLK
SCLK SCLK
23 22 19 18 15 14 1 0 23 22 19 18 15 14 1 0
20-Bit Mode
19 18 15 14 1 0 19 18 15 14 1 0
16-Bit Mode
15 14 1 0 15 14 1 0
T0034-03
24 Clks 24 Clks
LRCLK
SCLK SCLK
23 22 19 18 15 14 6 5 2 1 0 23 22 19 18 15 14 6 5 2 1 0
20-Bit Mode
19 18 15 14 6 5 2 1 0 19 18 15 14 6 5 2 1 0
16-Bit Mode
15 14 6 5 2 1 0 15 14 6 5 2 1 0
T0092-03
The TAS5715 DAP has a bidirectional I2C interface that is compatible with the Inter IC (I2C) bus protocol and
supports both 100-kHz and 400-kHz data transfer rates for single- and multiple-yte write and read operations.
This is a slave-only device that does not support a multimaster bus environment or wait-state insertion. The
control interface is used to program the registers of the device and to read device status.
The DAP supports the standard-mode I2C bus operation (100 kHz maximum) and the fast I2C bus operation
(400 kHz maximum). The DAP performs all I2C operations without I2C wait cycles.
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
SCL
Start Stop
T0035-01
There is no limit on the number of bytes that can be transmitted between start and stop conditions. When the last
word transfers, the master generates a stop condition to release the bus. A generic data transfer sequence is
shown in Figure 41.
The 7-bit address for TAS5715 is 0101 010 (0x54) or 0101 011 (0x56) defined by A_SEL (external pulldown for
0x54 and pullup for 0x56).Stero device with Headphone should use 0x54 as its device address.
Supplying a subaddress for each subaddress transaction is referred to as random I2C addressing. The TAS5715
also supports sequential I2C addressing. For write transactions, if a subaddress is issued followed by data for
that subaddress and the 15 subaddresses that follow, a sequential I2C write transaction has taken place, and the
data for all 16 subaddresses is successfully received by the TAS5715. For I2C sequential write transactions, the
subaddress then serves as the start address, and the amount of data subsequently transmitted, before a stop or
start is transmitted, determines how many subaddresses are written. As was true for random addressing,
sequential addressing requires that a complete set of data be transmitted. If only a partial set of data is written to
the last subaddress, the data for the last subaddress is discarded. However, all other data written is accepted;
only the incomplete data is discarded.
Single-Byte Write
As shown in Figure 42, a single-byte data-write transfer begins with the master device transmitting a start
condition followed by the I2C device address and the read/write bit. The read/write bit determines the direction of
the data transfer. For a data-write transfer, the read/write bit is 0. After receiving the correct I2C device address
and the read/write bit, the DAP responds with an acknowledge bit. Next, the master transmits the address byte or
bytes corresponding to the TAS5715 internal memory address being accessed. After receiving the address byte,
the TAS5715 again responds with an acknowledge bit. Next, the master device transmits the data byte to be
written to the memory address being accessed. After receiving the data byte, the TAS5715 again responds with
an acknowledge bit. Finally, the master device transmits a stop condition to complete the single-byte data-write
transfer.
Start
Condition Acknowledge Acknowledge Acknowledge
2 Stop
I C Device Address and Subaddress Data Byte
Read/Write Bit Condition
T0036-01
Multiple-Byte Write
A multiple-byte data-write transfer is identical to a single-byte data write transfer except that multiple data bytes
are transmitted by the master device to the DAP as shown in Figure 43. After receiving each data byte, the
TAS5715 responds with an acknowledge bit.
Start
Condition Acknowledge Acknowledge Acknowledge Acknowledge Acknowledge
2 Stop
I C Device Address and Subaddress First Data Byte Other Data Bytes Last Data Byte
Read/Write Bit Condition
T0036-02
Single-Byte Read
As shown in Figure 44, a single-byte data-read transfer begins with the master device transmitting a start
condition followed by the I2C device address and the read/write bit. For the data-read transfer, both a write
followed by a read are actually done. Initially, a write is done to transfer the address byte or bytes of the internal
memory address to be read. As a result, the read/write bit becomes a 0. After receiving the TAS5715 address
and the read/write bit, TAS5715 responds with an acknowledge bit. In addition, after sending the internal memory
address byte or bytes, the master device transmits another start condition followed by the TAS5715 address and
the read/write bit again. This time the read/write bit becomes a 1, indicating a read transfer. After receiving the
address and the read/write bit, the TAS5715 again responds with an acknowledge bit. Next, the TAS5715
transmits the data byte from the memory address being read. After receiving the data byte, the master device
transmits a not-acknowledge followed by a stop condition to complete the single-byte data-read transfer.
Repeat Start
Condition
Start Not
Condition Acknowledge Acknowledge Acknowledge Acknowledge
2 2
I C Device Address and Subaddress I C Device Address and Data Byte Stop
Read/Write Bit Read/Write Bit Condition
T0036-03
Multiple-Byte Read
A multiple-byte data-read transfer is identical to a single-byte data-read transfer except that multiple data bytes
are transmitted by the TAS5715 to the master device as shown in Figure 45. Except for the last data byte, the
master device responds with an acknowledge bit after receiving each data byte.
Repeat Start
Condition
Start Not
Condition Acknowledge Acknowledge Acknowledge Acknowledge Acknowledge Acknowledge
2 2
I C Device Address and Subaddress I C Device Address and First Data Byte Other Data Bytes Last Data Byte Stop
Read/Write Bit Read/Write Bit Condition
T0036-04
Bit 0: This is bit should be 1 if the headphone function is used in the TAS5715. If the headphone is not used, this
bit can be cleared to 0. Then if bit 1 is also set to 1, the TAS5715 drives the FAULTZ signal out on the A_SEL
pin. FAULTZ is the internal power-stage fault signal asserted low during errors like overcurrent, overtemperature,
and UVP.
Figure 46 shows the connection of A_SEL_HP_SDZ pin to headphone shutdown.
2
I S Audio Left
TAS5715
Right
(HP Amplifier)
HPL
RC
HPR Filter
15 k
B0424-01
Register 0x57 is used to achieve the clipping. Register 0x56 is used to scale the clipped waveform to get the
desired power out.
PWM DC Detection
The TAS5715 supports a PWM dc-detect function. This is to detect dc present in the input source and generated
by another means in the blocks prior to PCM-to-PWM conversion.
If enabled (0x46, bit 10), the detection block checks for PWM duty cycle. If it is above the programmed threshold
(0x0F, bits 74]) for more than the programmed duration of time (0x0F, bits 30), the PWM dc error flag is set on
error register 0x02, bit 0.
This bit is set as long as the dc condition remains. Once the dc condition is gone, the bit is cleared automatically.
The bit is cleared if detection is disabled.
T
Input Level (dB)
M0176-01
Professional-quality dynamic range compression automatically adjusts volume to flatten volume level.
Each DRC has adjustable threshold levels.
Programmable attack, release, and softening-filter constants
Transparent compression: compressors can attack fast enough to avoid apparent clipping before engaging,
and decay times can be set slow enough to avoid pumping.
S
a w 1
Z
B0265-05
DRC acts more like a gain limiter (automatic gain limiter, AGL). The block works to reduce the peak of energy if it
goes beyond the programmable threshold level. DRC starts an attack event (reduces gain) if energy goes above
the threshold. Similarly, it starts a release event if the level goes below the threshold (increases gain back to the
original value).
Attack and release events occur only when level remains above or below the threshold continuously during the
time-constant time. And the constant time is controlled by the attack/release rate. If the attack/release rate is
short, DRC operates frequently. Attack time defines how fast to cut the signal to bring it under the threshold.
Similarly, release time defines how fast to release the cut back to normal. Attack and release are shown in
Figure 50.
Threshold
INPUT
Threshold
OUTPUT
The device should be in all-channel shutdown when DRC parameters are changed. The TAS57X GDE (GUI)
takes care of this when changing DRC parameters.
TAS5715 supports two-band and one-band DRC. Two-band DRC helps to get the maximum sound levels out of
small, thin, low-cost speakers. It protects speakers from being overdriven/damaged and stops cabinet rattle
without sacrificing loudness.
In the two-band DRC mode, audio is split into to high-band and low-band. The bands have separate thresholds
and attack/decay filters.
Configuration is as shown in Figure 51. DRC1 (upper band) and DRC2 (lower band) can be programmed using
GDE. Default values for attack and decay filters cover most of the cases. Only thresholds require updating,
depending on the power levels for the upper and lower bands.
HPF DRC-1
LPF DRC-2
B0425-01
A crossover biquad should be used only for two-band DRC. It should be all-pass for the one-band DRC mode.
Only DRC1 (upper band) is used in the one-band DRC mode.
BANK SWITCHING
The TAS5715 uses an approach called bank switching together with automatic sample-rate detection. All
processing features that must be changed for different sample rates are stored internally in three banks. The
user can program which sample rates map to each bank. By default, bank 1 is used in 32-kHz mode, bank 2 is
used in 44.1/48-kHz mode, and bank 3 is used for all other rates. Combined with the clock-rate autodetection
feature, bank switching allows the TAS5715 to detect automatically a change in the input sample rate and switch
to the appropriate bank without any MCU intervention.
An external controller configures bankable locations (0x290x36, 0x3A0x3F, and 0x59,0x5D) for all three banks
during the initialization sequence.
If automatic bank switching is enabled (register 0x50, bits 2:0) , then the TAS5715 automatically swaps the
coefficients for subsequent sample rate changes, avoiding the need for any external controller intervention for a
sample-rate change.
By default, bits 2:0 have the value 000; indicating that bank switching is disabled. In that state, updates to
bankable locations take immediate effect. A write to register 0x50 with bits 2:0 being 001, 010, or 011 brings the
system into the coefficient-bank-update state update bank1, update bank2, or update bank3, respectively. Any
subsequent write to bankable locations updates the coefficient banks stored outside the DAP. After updating all
the three banks, the system controller should issue a write to register 0x50 with bits 2:0 being 100; this changes
the system state to automatic bank-switching mode. In automatic bank-switching mode, the TAS5715
automatically swaps banks based on the sample rate.
5
2 Bit
1
2 Bit
0
2 Bit
1
2 Bit
Sign Bit
S_xx.xxxx_xxxx_xxxx_xxxx_xxxx_xxx
M0125-01
The decimal value of a 3.23 format number can be found by following the weighting shown in Figure 52. If the
most significant bit is logic 0, the number is a positive number, and the weighting shown yields the correct
number. If the most significant bit is a logic 1, then the number is a negative number. In this case every bit must
be inverted, a 1 added to the result, and then the weighting shown in Figure 53 applied to obtain the magnitude
of the negative number.
1 0 1 4 23
2 Bit 2 Bit 2 Bit 2 Bit 2 Bit
1 0 1 4 23
(1 or 0) 2 + (1 or 0) 2 + (1 or 0) 2 + ....... (1 or 0) 2 + ....... (1 or 0) 2
M0126-01
Gain coefficients, entered via the I2C bus, must be entered as 32-bit binary numbers. The format of the 32-bit
number (4-byte or 8-digit hexadecimal number) is shown in Figure 54
Sign Fraction
Bit Digit 6
u u u u u u S x x. x x x x x x x x x x x x x x x x x x x x x x x 0
2
Figure 54. Alignment of 3.23 Coefficient in 32-Bit I C Word
0 ns
PDN
(1)
tPLL 50 ms
0 ns 2 ms
(2) (2)
50 ms 1 ms + 1.3 tstart 1 ms + 1.3 tstop 2 ms
0 ns
100 ms
RESET 13.5 ms
(1)
tPLL
2 ms
AVDD/DVDD 3V
0 ns
PDN 2 ms
0 ns
2
I C
2 ms
RESET
2 ms
0 ns
8V
PVDD
6V
T0420-05
Initialization Sequence
Use the following sequence to power-up and initialize the device:
1. Hold all digital inputs low and ramp up AVDD/DVDD to at least 3V.
2. Initialize digital inputs and PVDD supply as follows:
Drive RESET = 0, PDN = 1, and other digital inputs to their desired state while ensuring that
all are never more than 2.5V above AVDD/DVDD. Wait at least 100s, drive RESET = 1, and
wait at least another 13.5ms.
Ramp up PVDD to at least 8V while ensuring that it remains below 6V for at least 100s after
AVDD/DVDD reaches 3V. Then wait at least another 10s.
3. Trim oscillator (write 0x00 to register 0x1B) and wait at least 50ms.
4. Configure the DAP via I2C (see Users's Guide for typical values).
5. Configure remaining registers.
6. Exit shutdown (sequence defined below).
Normal Operation
The following are the only events supported during normal operation:
1. Writes to master/channel volume registers.
2. Writes to soft mute register.
3. Enter and exit shutdown (sequence defined below).
4. Clock errors and rate changes.
Note: Events 3 and 4 are not supported for 240ms+1.3*Tstart after trim following AVDD/DVDD powerup
ramp (where Tstart is specified by register 0x1A).
Shutdown Sequence
Enter:
1. Ensure I2S clocks have been stable and valid for at least 50ms.
2. Write 0x40 to register 0x05.
3. Wait at least 1ms+1.3*Tstop (where Tstop is specified by register 0x1A).
4. Once in shutdown, stable clocks are not required while device remains idle.
5. If desired, reconfigure by ensuring that clocks have been stable and valid for at least 50ms before
returning to step 4 of initialization sequence.
Exit:
1. Ensure I2S clocks have been stable and valid for at least 50ms.
2. Write 0x00 to register 0x05 (exit shutdown command may not be serviced for as much as 240ms
after trim following AVDD/DVDD powerup ramp).
3. Wait at least 1ms+1.3*Tstart (where Tstart is specified by register 0x1A).
4. Proceed with normal operation.
Powerdown Sequence
Use the following sequence to powerdown the device and its supplies:
1. If time permits, enter shutdown (sequence defined above); else, in case of sudden power loss,
assert PDN = 0 and wait at least 2ms.
2. Assert RESET = 0.
3. Drive digital inputs low and ramp down PVDD supply as follows:
Drive all digital inputs low after RESET has been low for at least 2s.
Ramp down PVDD while ensuring that it remains above 8V until RESET has been low for at
least 2s.
4. Ramp down AVDD/DVDD while ensuring that it remains above 3V until PVDD is below 6V and
that it is never more than 2.5V below the digital inputs.
Headphone Usage
HP/SPKR
(SE/BTL)
VALID
PWM_A(L+)
SpkrL+/R+ 50% HPL/R SpkrL+/R+
PWM_C(R+)
t(enterSD) t(exitSD)
FAULT = 1 Output
HPSD
(A0/FAULT)
Hi-Z (Ext. Pulldown)
I2C: SCL Enter HP Exit Enable Disable Enter Spkr Exit Unmute
Mute Config Unmute Mute Config
SDA ACSD ACSD FAULT FAULT ACSD ACSD (if not done in
Spkr Config)
PDN
T0452-01
Headphone/Speaker Configuration
PARAMETE
DESCRIPTION MIN TYP MAX UNIT
R
t(mute) Mute volume ramp wait time (t(volramp) given by register 0x0E <2:0>) 5 + 1.3 t(volramp) ms
Exit shutdown wait time before issuing further commands to device (t(start)
t(exitSD) 1 + 1.3 t(start) ms
given by regioster 0x1A<4:0>)
Enter shutdown wait time before issuing further commands to device (t(stop)
t(enterSD) 1 + 1.3 t(stop) ms
given by regioster 0x1A<4:0>)
Exit shutdown wait time before enabling external headphone amp (t(HPchg)
t(exitSDHP) 1 + 1.3 t(HPchg) ms
given by register 0x1A<6:5>)
Headphone amp exit shutdown wait time before unmuting (t(HPamp) given by
t(exitSDHPamp) 1 + 1.3 t(HPamp) ms
register 0x1C<7:4>)
Headphone amp enter shutdown wait time before entering ACSD (t(HPamp)
t(enterSDHPamp) 1 + 1.3 t(HPamp) ms
given by register 0x1C<7:4>)
Speaker Configuration
Registers 0x070x0B Master/channel speaker volume
Register 0x19 SDG = 0x30 or 0x00 (no channels in SDG)
Registers 0x110x12 ICD1/2 = {0xB8, 0x60}
Register 0x1A<7> Clear bit for speaker mode (HP/SPKR = 0)
Register 0x1A<4:0> Set to 0 1000 for 16.5-ms start/stop period
Register 0x20<23> Set bit for Ch1 BD mode
Register 0x20<19> Set bit for Ch2 BD mode
Register 0x46<1:0> Set both bits to enable DRC1 and DRC2
Register 0x50<7> Clear bit to enable EQ
Headphone Configuration
Registers 0x070x0B Master/channel headphone volume
Register 0x19 SDG = 0x30 or 0x00 (PWM3/4 in SDG)
Registers 0x110x12 ICD1/2 = {0xAC, 0x54}
Register 0x1A<7> Clear bit for headphone mode (HP/SPKR = 0)
Register 0x1A<4:0> Set to 0 0000 for 0-ms start/stop period
Register 0x20<23> Clear bit for Ch1 AD mode
Register 0x20<19> Clear bit for Ch2 AD mode
Register 0x46<1:0> Clear both bits to disable DRC1 and DRC2
Register 0x50<7> Set bit to disable EQ
VALID
PWM_A(L+)
PWM_C(R+) HPL/R HPL/R
t(exitSDHP)
t(HPamp) t(exitSDHPamp)
PWM_B(L)
PWM_D(R)
FAULT = 1 Output
HPSD
(A0/FAULT)
Hi-Z (Ext. Pulldown)
PDN
T0453-01
PARAMETE
DESCRIPTION MIN TYP MAX UNIT
R
t(PDN-HPSD) Delay from power-down event to headphone amplifier shutdown assertion 2 ms
Exit shutdown wait time before enabling external headphone amp (t(HPchg)
t(exitSDHP) 1 + 1.3 t(HPchg) ms
given by register 0x1A<6:5>)
Headphone amp exit shutdown wait time before unmuting (t(HPamp) given by 1 + 1.3
t(exitSDHPamp) ms
register 0x1C<7:4>) t(HPamp)
t(HPamp) Headphone amp enable/disable wait time (given by register 0x1C<7:4>) t(HPamp) ms
HP/SPKR
(SE/BTL)
VALID
PWM_A(L+)
PWM_C(R+) HPL/R HPL/R
t(mute) t(exitSDHP)
t(enterSDHPamp) t(exitSDHPamp)
PWM_B(L)
PWM_D(R)
FAULT = 1 Output
HPSD
(A0/FAULT)
Hi-Z (Ext. Pulldown)
PDN
T0454-01
PARAMETE
DESCRIPTION MIN TYP MAX UNIT
R
5 + 1.3
t(mute) Mute volume ramp wait time (t(volramp) given by register 0x0E <2:0>) ms
t(volramp)
Exit shutdown wait time before enabling external headphone amp (t(HPchg)
t(exitSDHP) 1 + 1.3 t(HPchg) ms
given by register 0x1A<6:5>)
Headphone amp exit shutdown wait time before unmuting (t(HPamp) given by 1 + 1.3
t(exitSDHPamp) ms
register 0x1C<7:4>) t(HPamp)
Headphone amp enter shutdown wait time before entering ACSD (t(HPamp) 1 + 1.3
t(enterSDHPamp) ms
given by register 0x1C<7:4>) t(HPamp)
When bit D6 is set low, the system exits all-channel shutdown and starts playing audio; otherwise, the outputs
are shut down (hard mute).
Volume in the TAS5715 is not intended for dynamic changes. Channel volumes are set during initialization.
Master volume is written with a value 0xFF to MUTE and with a value of 0x30 to UNMUTE during normal mode.
When DRC functionality is used, the maximum allowed volume (sum of channel and master volume ) is 15.5 dB.
When DRC is enabled, a MUTE command does not completely mute the system. The actual mute level depends
on the volume settings and modulation index.
FINE VOLUME SETTING:
TAS5715 has input mixers (0x73 , 0x77) that can be fine-tuned with a 3.23 format number to achieve the fine
volume setting.
To achieve 12.125 db of master volume, set the mixer to 0.125 db and set 0x07 (maser volume) to 12 db. The
advantage is 0x73 and 0x77 can be set to a much finer setting using 3.23 format numbers, providing the
flexibility to adjust output power precisely.
1 1 1 1 1 1 1 0 103 dB
1 1 1 1 1 1 1 1 Soft mute
Bits Volume slew rate (Used to control volume change and MUTE ramp rates). These bits control the
D2D0: number of steps in a volume ramp. Volume steps occur at a rate that depends on the sample rate of
the I2S data as follows:
Sample rate (KHz) Approximate ramp rate
8/16/32 125 ms/step
11.025/22.05/44.1 90.7 ms/step
12/24/48 83.3 ms/step
(1) See register 0x46, bit D10 for enable/disable control of this feature.
Copyright 2010, Texas Instruments Incorporated Submit Documentation Feedback 57
Product Folder Link(s): TAS5715
TAS5715
SLOS645 AUGUST 2010 www.ti.com
ICD settings have high impact on audio performance (e.g.: dynamic range, THD, crosstalk, etc.) Therefore,
appropriate ICD settings must be used. By default, the device has ICD settings for AD mode. If used in BD
mode, then update these registers before coming out of all-channel shutdown.
(1) This register can be written only with a non-reserved value. Also, this register can be written once after a reset.
(2) Default values are in bold.
D7 D6 D5 D4 D3 D2 D1 D0 FUNCTION
(1)
0 1 1 1 0 0 1 0 Reserved
RESERVED (0x210x24)
Note that channels are encoded so that channel 1 = 0x00, channel 2 = 0x01, , channel 4 = 0x03.
D7 D6 D5 D4 D3 D2 D1 D0 FUNCTION
0 1 0 0 0 1 0 1 Reserved (1)
D7 D6 D5 D4 D3 D2 D1 D0 FUNCTION
(1)
0 0 0 0 Reserved
0 Disable (1-H) complementary low-pass filter generation
(2) (3)
1 Enable (1-H) complementary low-pass filter generation
(2)
0 DRC2 turned OFF
1 DRC2 turned ON
(2)
0 DRC1 turned OFF
1 DRC1 turned ON
www.ti.com 11-Apr-2013
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (C) Top-Side Markings Samples
(1) Drawing Qty (2) (3) (4)
TAS5715PHP ACTIVE HTQFP PHP 48 250 Green (RoHS CU NIPDAU Level-3-260C-168 HR 0 to 85 TAS5715
& no Sb/Br)
TAS5715PHPR ACTIVE HTQFP PHP 48 1000 Green (RoHS CU NIPDAU Level-3-260C-168 HR 0 to 85 TAS5715
& no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 9-May-2017
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 9-May-2017
Pack Materials-Page 2
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