2N5564/5565/5566

Vishay Siliconix

Matched N-Channel JFET Pairs

PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV)
2N5564 0.5 to 3 40 7.5 3 5
2N5565 0.5 to 3 40 7.5 3 10
2N5566 0.5 to 3 40 7.5 3 20

FEATURES BENEFITS APPLICATIONS

D Two-Chip Design D Tight Differential Match vs. Current D Wideband Differential Amps
D High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed,
D Low Offset/Drift Voltage Accuracy Temp-Compensated,
D Low Gate Leakage: 3 pA D Minimum Input Error/Trimming Requirement Single-Ended Input Amps
D Low Noise: 12 nVHz @ 10 Hz D Insignificant Signal Loss/Error Voltage D High-Speed Comparators
D Good CMRR: 76 dB D High System Sensitivity D Impedance Converters
D Minimum Parasitics D Minimum Error with Large Input Signals D Matched Switches
D Maximum High Frequency Performance

DESCRIPTION
The 2N5564/5565/5566 are matched pairs of JFETs mounted The hermetically-sealed TO-71 package is available with full
in a TO-71 package. This two-chip design reduces parasitics military processing (see Military Information).
for good performance at high frequency while ensuring
extremely tight matching. This series features high
breakdown voltage (V(BR)DSS typically > 55 V), high gain For similar products see the low-noise U/SST401 series, and
(typically > 9 mS), and <5 mV offset between the two die. the low-leakage 2N5196/5197/5198/5199 data sheets.

TO-71

S1 G2

1 6

D1 2 5 D2

3 4
G1 S2

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "80 V Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 325 mW
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW
Notes
Lead Temperature (1/16 from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C a. Derate 2.6 mW/_C above 25_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 200_C b. Derate 5.2 mW/_C above 25_C

Document Number: 70254 www.vishay.com

S-04031Rev. D, 04-Jun-01 8-1
2N5564/5565/5566
Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
2N5564 2N5565 2N5566

Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Gate-Source
V(BR)GSS IG = 1 mA, VDS = 0 V 55 40 40 40
Breakdown Voltage
V
Gate-Source
VGS(off) VDS = 15 V, ID = 1 nA 2 0.5 3 0.5 3 0.5 3
Cutoff Voltage
Saturation Drain
Currentb
IDSS VDS = 15 V, VGS = 0 V 20 5 30 5 30 5 30 mA

VGS = 20 V, VDS = 0 V 5 100 100 100 pA

Gate Reverse Current IGSS
TA = 150_C 10 200 200 200 nA
VDG = 15 V, ID = 2 mA 3 pA
Gate Operating Currentc IG
TA = 125_C 1 nA
Drain-Source
rDS(on) VGS = 0 V, ID = 1 mA 50 100 100 100 W
On-Resistance
Gate-Source Voltagec VGS VDG = 15 V, ID = 2 mA 1.2
Gate-Source V
VGS(F) IG = 2 mA , VDS = 0 V 0.7 1 1 1
Forward Voltage

Dynamic
Common-Source
gfs 9 7.5 12.5 7.5 12.5 7.5 12.5 mS
Forward Transconductance VDS = 15 V, ID = 2 mA
Common-Source f = 1 kHz
gos 35 45 45 45 mS
Output Conductance
Common-Source VDS = 15 V, ID = 2 mA
Forward Transconductance
gfs
f = 100 MHz
8.5 7 7 7 mS

Common-Source
Ciss 10 12 12 12
Input Capacitance
VDS = 15 V, ID = 2 mA
Common-Source pF
f = 1 MHz
Reverse Transfer Crss 2.5 3 3 3
Capacitance
Equivalent Input VDS = 15 V, ID = 2 mA nV
en 12 50 50 50
Noise Voltage f = 10 Hz Hz
Noise Figure NF RG = 10 MW 1 1 1 dB

Matching
Differential |V GS1V GS2| VDG = 15 V, ID = 2 mA 5 10 20 mV
Gate-Source Voltage
Gate-Source Voltage D|V GS1V GS2| VDG = 15 V, ID = 2 mA mV/
Differential Change 10 25 50
DT TA = 55 to 125_C _C
with Temperature

Saturation Drain I DSS1

VDS = 15 V, VGS = 0 V 0.98 0.95 1 0.95 1 0.95 1
Current Ratioc I DSS2

gfs1 VDS = 15 V, ID = 2 mA
Transconductance Ratio gfs2 0.98 0.95 1 0.90 1 0.90 1
f = 1 kHz

Common Mode VDG = 10 to 20 V

CMRR 76 dB
Rejection Ratioc ID = 2 mA
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCBD
b. Pulse test: PW v300 ms duty cycle v3%.
c. This parameter not registered with JEDEC.

www.vishay.com Document Number: 70254

8-2 S-04031Rev. D, 04-Jun-01
 2N5564/5565/5566
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage On-Resistance vs. Drain Current
100 200 100
r DS(on) Drain-Source On-Resistance ( W )

r DS(on) Drain-Source On-Resistance ( W )

rDS @ ID = 1 mA, VGS = 0 TA = 25_C
IDSS @ VDS = 15 V, VGS = 0

I DSS Saturation Drain Current (mA)

80 160 80

IDSS VGS(off) = 2 V
60 rDS 120 60

40 80 40

20 40 20

0 0 0
0 2 4 6 8 10 1 10 100
VGS(off) Gate-Source Cutoff Voltage (V) ID Drain Current (mA)

On-Resistance vs. Temperature Turn-On Switching

200 5
ID = 1 mA tr approximately independent of ID
r DS(on) Drain-Source On-Resistance ( W )

rDS changes 0.7%/_C VDG = 5 V, RG = 50 W

VGS(L) = 10 V
160 4

tr
Switching Time (ns)

120 3
VGS(off) = 2 V td(on) @
ID = 12 mA

80 2

40 1 td(on) @
ID = 3 mA

0 0
55 35 15 5 25 45 65 85 105 125 0 2 4 6 8 10
TA Temperature (_C) VGS(off) Gate-Source Cutoff Voltage (V)

Forward Transconductance and Output Conductance

vs. Gate-Source Cutoff Voltage Turn-Off Switching
50 500 30
gfs and gos @ VDS = 15 V td(off) independent of device VGS(off)
VGS = 0 V, f = 1 kHz VDG = 5 V, VGS(L) = 10 V
g fs Forward Transconductance (mS)

40 400 24
g os Output Conductance ( mS)

tf
Switching Time (ns)

gfs gos
30 200 18
VGS(off) = 2 V

20 200 12
td(off)

10 100 6

0 0 0
0 2 4 6 8 10 0 2 4 6 8 10
VGS(off) Gate-Source Cutoff Voltage (V) ID Drain Current (mA)

Document Number: 70254 www.vishay.com

S-04031Rev. D, 04-Jun-01 8-3
2N5564/5565/5566
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Output Characteristics Transfer Characteristics
14 40
VGS(off) = 1.5 V VGS(off) = 2 V VDS = 15 V
VGS = 0 V
12
32
0.1 V
10
I D Drain Current (mA)

I D Drain Current (mA)

0.2 V 24 TA = 55_C
8
0.3 V 25_C
6 0.4 V 16

4 0.5 V
0.6 V 8
2 125_C

0.7 V
0 0
0 4 8 12 16 20
0 0.4 0.8 1.2 1.6 2
VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V)

Output Characteristics Capacitance vs. Gate-Source Voltage

5 30
VGS = 0 V VGS(off) = 1.5 V
f = 1 MHz
0.2 V
0.1 V VDS = 0 V
4 0.3 V 24
I D Drain Current (mA)

0.4 V
Capacitance (pF)

3 18
0.5 V

2 0.6 V 12

0.7 V Ciss
1 0.8 V 6
Crss

0.9 V
0 0
0 0.2 0.4 0.6 0.8 1 0 4 8 12 16 20
VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V)

Gate Leakage Current Common-Gate Input Admittance

10 nA 100
IGSS @ 25_C
VDG = 15 V
ID = 10 mA ID = 10 mA
TA = 125_C TA = 25_C gig
1 nA

big
I G Gate Leakage

1 mA 10
100 pA
1 mA
(mS)

10 pA 10 mA IGSS @ 25_C
TA = 25_C 1

1 pA

IG(on) @ ID
0.1 pA 0.1
0 6 12 18 24 30 100 200 500 1000

VDG Drain-Gate Voltage (V) f Frequency (MHz)

www.vishay.com Document Number: 70254

8-4 S-04031Rev. D, 04-Jun-01
 2N5564/5565/5566
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Common-Gate Forward Admittance Common-Gate Reverse Admittance
100 10
VDG = 15 V VDG = 15 V
ID = 10 mA ID = 10 mA
TA = 25_C TA = 25_C

gfg bfg
brg
10 1
gfg
(mS)

(mS)
+grg
grg

1 0.1

0.1 0.01
100 200 500 1000 100 200 500 1000
f Frequency (MHz) f Frequency (MHz)

Common-Gate Output Admittance Noise Voltage vs. Frequency

100 100
VDG = 15 V VDS = 15 V
ID = 10 mA
TA = 25_C
Hz

bog
en Noise Voltage nV /

10
(mS)

gog
10
ID = 1 mA

ID = 10 mA

0.1 1
100 200 500 1000 10 100 1k 10 k 100 k
f Frequency (MHz) f Frequency (Hz)

Output Conductance vs. Drain Current Transconductance vs. Drain Current

1000 100
VGS(off) = 2 V VDS = 15 V VGS(off) = 2 V VDS = 15 V
f = 1 kHz f = 1 kHz
gfs Forward Transconductance (mS)
gos Output Conductance (S)

TA = 55_C
25_C
TA = 55_C
100 10

25_C
125_C

125_C

10 1
0.1 1.0 10 0.1 1.0 10

ID Drain Current (mA) ID Drain Current (mA)

Document Number: 70254 www.vishay.com

S-04031Rev. D, 04-Jun-01 8-5