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    DPG80C400HB: Fast Diode

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    Neha Jain
    This document provides specifications for a fast diode component including maximum voltage ratings, current ratings, voltage drop characteristics, thermal resistance specifications, and switching performance characteristics like reverse recovery time and current. The document includes typical curves showing properties like forward voltage drop, reverse recovery charge and current, and reverse recovery time over varying temperatures and current conditions.

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    DPG80C400HB: Fast Diode

    Uploaded by

    Neha Jain
    37 views2 pages
    This document provides specifications for a fast diode component including maximum voltage ratings, current ratings, voltage drop characteristics, thermal resistance specifications, and switching performance characteristics like reverse recovery time and current. The document includes typical curves showing properties like forward voltage drop, reverse recovery charge and current, and reverse recovery time over varying temperatures and current conditions.

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    This document provides specifications for a fast diode component including maximum voltage ratings, current ratings, voltage drop characteristics, thermal resistance specifications, and switching performance characteristics like reverse recovery time and current. The document includes typical curves showing properties like forward voltage drop, reverse recovery charge and current, and reverse recovery time over varying temperatures and current conditions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    37 views2 pages

    DPG80C400HB: Fast Diode

    Uploaded by

    Neha Jain
    This document provides specifications for a fast diode component including maximum voltage ratings, current ratings, voltage drop characteristics, thermal resistance specifications, and switching performance characteristics like reverse recovery time and current. The document includes typical curves showing properties like forward voltage drop, reverse recovery charge and current, and reverse recovery time over varying temperatures and current conditions.

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    © All Rights Reserved
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    DPG80C400HB

    Fast Diode Ratings


    Symbol Definition Conditions min. typ. max. Unit
    VRSM max. non-repetitive reverse blocking voltage TVJ = 25C 400 V
    VRRM max. repetitive reverse blocking voltage TVJ = 25C 400 V
    IR reverse current, drain current VR = 400 V TVJ = 25C 1 A
    VR = 400 V TVJ = 150C 0.4 mA
    VF forward voltage drop IF = 40 A TVJ = 25C 1.43 V
    IF = 80 A 1.69 V
    IF = 40 A TVJ = 150 C 1.14 V
    IF = 80 A 1.44 V
    I FAV average forward current TC = 135C T VJ = 175 C 40 A
    rectangular d = 0.5
    VF0 threshold voltage TVJ = 175 C 0.79 V
    for power loss calculation only
    rF slope resistance 7.1 m
    R thJC thermal resistance junction to case 0.7 K/W
    R thCH thermal resistance case to heatsink 0.25 K/W
    Ptot total power dissipation TC = 25C 215 W
    I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C 400 A
    CJ junction capacitance VR = 200 V f = 1 MHz TVJ = 25C 46 pF
    I RM max. reverse recovery current TVJ = 25 C 4 A
    IF = 40 A; VR = 270 V TVJ = C 8.5 A
    t rr reverse recovery time -di F /dt = 200 A/s TVJ = 25 C 45 ns
    TVJ = C 80 ns

    IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a

    2013 IXYS all rights reserved


    DPG80C400HB

    Fast Diode
    80 0.8 20
    TVJ = 125C
    80 A
    TVJ = 125C 80 A
    70 VR = 270 V
    0.7 VR = 270 V 40 A
    40 A 20 A
    60 16
    0.6
    50 Qrr 20 A IRM
    IF
    40 0.5 12
    TVJ = 150C [C]
    [A] 30 [A]
    0.4
    20 8
    25C 0.3
    10

    0.2 4
    0.0 0.4 0.8 1.2 1.6 2.0 0 200 400 600 0 200 400 600
    VF [V] -diF /dt [A/s] -diF /dt [A/s]
    Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recov. current
    IF versus VF Qrr versus -diF /dt IRM versus -diF /dt

    1.4 120 1000 15


    TVJ = 125C VFR
    tfr
    1.2 VR = 270 V
    800 12
    100
    1.0

    0.8 trr tfr 600 9


    VFR
    Kf 80
    0.6 [ns] 400
    [ns] 6 [V]
    IRM
    0.4 80 A
    60
    40 A 200 TVJ = 125C 3
    0.2 20 A VR = 270 V
    Qrr
    IF = 40 A
    0.0 40 0 0
    0 40 80 120 160 0 200 400 600 0 200 400 600
    TVJ [C] -diF /dt [A/s] -diF /dt [A/s]
    Fig. 4 Typ. dynamic parameters Fig. 5 Typ. reverse recov. time Fig. 6 Typ. forward recovery voltage
    Qrr, IRM versus TVJ trr versus -diF /dt VFR & time tfr versus diF /dt

    25 0.8

    20
    0.6
    IF = 80 A
    15 40 A ZthJC
    Erec 20 A 0.4
    10 [K/W]
    [J]
    0.2
    5
    TVJ = 125C
    VR = 270 V
    0 0.0
    0 200 400 600 1 10 100 1000 10000
    -diF /dt [A/s] t [ms]
    Fig. 7 Typ. recovery energy Fig. 8 Transient thermal impedance junction to case
    Erec versus -diF /dt

    IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a

    2013 IXYS all rights reserved

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