BSS 98

SIPMOS Small-Signal Transistor

N channel
Enhancement mode
Logic Level
VGS(th) = 0.8...1.6 V

Pin 1 Pin 2 Pin 3

S G D

Type VDS ID RDS(on) Package Marking

BSS 98 50 V 0.3 A 3.5 TO-92 SS98

Type Ordering Code Tape and Reel Information

BSS 98 Q62702-S053 E6288
BSS 98 Q62702-S517 E6296
BSS 98 Q62702-S635 E6325

Maximum Ratings
Parameter Symbol Values Unit

Drain source voltage VDS 50 V

Drain-gate voltage V
DGR
RGS = 20 k 50
Gate source voltage VGS 20
ESD Sensitivity as per MIL-STD 883 Class 1
Continuous drain current ID A
TA = 25 C 0.3
DC drain current, pulsed IDpuls
TA = 25 C 1.2
Power dissipation Ptot W
TA = 25 C 0.63

Data Sheet 1 05.99

 BSS 98

Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature Tj -55 ... + 150 C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air 1) RthJA 200 K/W
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V (BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 C 50 - -
Gate threshold voltage V GS(th)
VGS=V DS, ID = 1 mA 0.8 1.2 1.6
Zero gate voltage drain current IDSS
VDS = 50 V, VGS = 0 V, Tj = 25 C - 0.05 0.5 A
VDS = 50 V, VGS = 0 V, Tj = 125 C - - 5
VDS = 30 V, VGS = 0 V, Tj = 25 C - - 100 nA
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-state resistance RDS(on)
VGS = 10 V, ID = 0.3 A - 1.8 3.5
VGS = 4.5 V, ID = 0.3 A - 2.8 6

Data Sheet 2 05.99

 BSS 98

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS 2 * ID * RDS(on)max, ID = 0.3 A 0.12 0.23 -
Input capacitance Ciss pF
VGS = 0 V, V DS = 25 V, f = 1 MHz - 40 55
Output capacitance Coss
VGS = 0 V, V DS = 25 V, f = 1 MHz - 15 25
Reverse transfer capacitance Crss
VGS = 0 V, V DS = 25 V, f = 1 MHz - 5 8
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 0.29 A
RG = 50 - 5 8
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 0.29 A
RG = 50 - 6 9
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 0.29 A
RG = 50 - 12 16
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 0.29 A
RG = 50 - 15 20

Data Sheet 3 05.99

 BSS 98

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TA = 25 C - - 0.3
Inverse diode direct current,pulsed ISM
TA = 25 C - - 1.2
Inverse diode forward voltage V SD V
VGS = 0 V, IF = 0.6 A - 1 1.4

Data Sheet 4 05.99

 BSS 98

Power dissipation Drain current

Ptot = (TA) ID = (TA)
parameter: VGS 10 V

0.70 0.32

W
A
0.60
Ptot 0.55 ID
0.24
0.50

0.45 0.20
0.40

0.35 0.16

0.30
0.12
0.25

0.20
0.08
0.15

0.10
0.04
0.05
0.00 0.00
0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160
TA TA

Safe operating area ID=f(VDS) Drain-source breakdown voltage

parameter : D = 0.01, TC=25C V(BR)DSS = (Tj)

60
V
58
V(BR)DSS 57
56
55
54
53
52
51
50
49
48
47
46
45
-60 -20 20 60 100 C 160
Tj

Data Sheet 5 05.99

 BSS 98

Typ. output characteristics Typ. drain-source on-resistance

ID = (VDS) RDS (on) = (ID)
parameter: tp = 80 s , Tj = 25 C parameter: tp = 80 s, Tj = 25 C

0.70 11
Ptot = 1W
a b c d e f
A lk i h
j g

0.60 VGS [V]
9
ID 0.55 a 2.0 RDS (on)
b 2.5
0.50 f 8
c 3.0

0.45 d 3.5 7
e 4.0
0.40
e f 4.5 6
0.35 g 5.0
h 6.0 5
0.30
d i 7.0
0.25 j 8.0
4
k 9.0
0.20 3 g
c l 10.0
0.15 h
i
2 kl j
0.10 VGS [V] =
b
1 a b c d e f g h i j k l
0.05 a 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
0.00 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0.10 0.20 0.30 0.40 A 0.60
VDS ID

Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 s parameter: tp = 80 s,
VDS 2 x ID x RDS(on)max V DS2 x ID x RDS(on)max

0.65 0.30
A S

0.55 0.26
ID gfs 0.24
0.50
0.22
0.45
0.20
0.40
0.18
0.35 0.16
0.30 0.14

0.25 0.12
0.10
0.20
0.08
0.15
0.06
0.10
0.04
0.05 0.02
0.00 0.00
0 1 2 3 4 5 6 7 8 V 10 0.00 0.10 0.20 0.30 0.40 A 0.55
VGS ID

Data Sheet 6 05.99

 BSS 98

Drain-source on-resistance Gate threshold voltage

RDS (on) = (Tj ) VGS (th) = (Tj )
parameter: ID = 0.3 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

9 2.6

V

2.2
RDS (on) 7 VGS(th)
2.0

1.8
6
98%
1.6
5 1.4
98% typ
4 1.2

1.0
3 2%
0.8
typ
2 0.6

0.4
1
0.2
0 0.0
-60 -20 20 60 100 C 160 -60 -20 20 60 100 C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = (VSD)
parameter:VGS=0V, f = 1 MHz parameter: Tj , tp = 80 s

10 3 10 1

pF A
C IF

10 2 10 0

Ciss

Coss
10 1 10 -1
Tj = 25 C typ

Crss Tj = 150 C typ

Tj = 25 C (98%)
Tj = 150 C (98%)

10 0 10 -2
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Data Sheet 7 05.99