BSS 119

SIPMOS ® Small-Signal Transistor

• N channel
• Enhancement mode
• VGS(th) = 1.6 ...2.6 V

Pin 1 Pin 2 Pin 3

G S D

Type VDS ID RDS(on) Package Marking

BSS 119 100 V 0.17 A 6Ω SOT-23 sSH
Type Ordering Code Tape and Reel Information
BSS 119 Q67000-S007 E6327

Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDS 100 V
Drain-gate voltage VDGR
RGS = 20 kΩ 100
Gate source voltage VGS ± 14
Gate-source peak voltage,aperiodic Vgs ± 20
Continuous drain current ID A
TA = 28 °C 0.17
DC drain current, pulsed IDpuls
TA = 25 °C 0.68
Power dissipation Ptot W
TA = 25 °C 0.36

Semiconductor Group 1 Sep-13-1996

 BSS 119

Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air RthJA ≤ 350 K/W
Therminal resistance, chip-substrate- reverse side 1)RthJSR ≤ 285
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 100 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 1.6 2 2.6
Zero gate voltage drain current IDSS µA
VDS = 100 V, VGS = 0 V, Tj = 25 °C
VDS = 100 V, VGS = 0 V, Tj = 125 °C - 0.1 1
VDS = 60 V, VGS = 0 V, Tj = 25 °C - 2 60
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-state resistance RDS(on) Ω
VGS = 10 V, ID = 0.17 A - 4 6
VGS = 4.5 V, ID = 0.17 A - 6 10

Semiconductor Group 2 Sep-13-1996

 BSS 119

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 0.17 A 0.1 0.2 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 70 95
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 10 15
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 4 6
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RGS = 50 Ω - 4 6
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RGS = 50 Ω - 5 8
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RGS = 50 Ω - 12 16
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RGS = 50 Ω - 12 16

Semiconductor Group 3 Sep-13-1996

 BSS 119

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TA = 25 °C - - 0.17
Inverse diode direct current,pulsed ISM
TA = 25 °C - - 0.68
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 0.34 A, Tj = 25 °C - 0.85 1.3

Semiconductor Group 4 Sep-13-1996

 BSS 119

Power dissipation Drain current

Ptot = ƒ(TA) ID = ƒ(TA)
parameter: VGS ≥ 10 V

0.40 0.18

W
A

Ptot 0.32 ID
0.14
0.28
0.12
0.24
0.10
0.20
0.08
0.16

0.06
0.12

0.04
0.08

0.04 0.02

0.00 0.00
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TA TA

Safe operating area ID=f(VDS) Drain-source breakdown voltage

parameter : D = 0.01, TC=25°C V(BR)DSS = ƒ(Tj)

120
V
116
V(BR)DSS114
112
110
108
106
104
102
100
98
96
94
92
90
-60 -20 20 60 100 °C 160
Tj

Semiconductor Group 5 Sep-13-1996

 BSS 119

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs , Tj = 25 °C parameter: tp = 80 µs, Tj = 25 °C

0.38 19
Ptot = 0W lki
j gf
A h e Ω a b c

0.32 VGS [V] 16

ID a 2.5 RDS (on)
0.28 b 3.0 14
c 3.5
d
d 4.0
0.24 12
e 4.5
f 5.0
0.20 10
g 5.5
h 6.0
0.16 i 7.0
8

c j 8.0
0.12 6 d
k 9.0
l 10.0 e
fi g
h
0.08 4 j k
b
VGS [V] =
0.04 2 a b c d e f g h i j k
a 2.5
3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0
0.00 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0.04 0.08 0.12 0.16 0.20 A 0.28
VDS ID

Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,

0.75 0.40

A
0.65 S

ID 0.60 gfs
0.30
0.55
0.50
0.25
0.45
0.40
0.20
0.35
0.30
0.15
0.25
0.20 0.10
0.15
0.10 0.05
0.05
0.00 0.00
0 1 2 3 4 5 6 7 8 V 10 0.00 0.10 0.20 0.30 0.40 0.50 A 0.65
VGS ID

Semiconductor Group 6 Sep-13-1996

 BSS 119

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = 0.17 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

15 4.6
Ω V
13 4.0
RDS (on) 12 VGS(th)
3.6
11
3.2
10
9 2.8 98%

8 2.4
98%
7 typ
2.0
6 2%
5 typ 1.6

4 1.2
3
0.8
2
0.4
1
0 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS=0V, f = 1 MHz parameter: Tj , tp = 80 µs

10 3 10 0

pF A
C IF

10 2 10 -1
Ciss

10 1 10 -2
Coss
Tj = 25 °C typ
Tj = 150 °C typ
Crss
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 0 10 -3
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 Sep-13-1996

 BSS 119

Package outlines
SOT-23
Dimensions in mm

Semiconductor Group 8 Sep-13-1996