STQ1NK60ZR

STD1LNK60Z-1
N-CHANNEL 600V - 13 - 0.8A TO-92/IPAK
Zener-Protected SuperMESH Power MOSFET

TYPE VDSS RDS(on) ID PW

STQ1NK60ZR 600 V < 15 0.3 A 3W

STD1LNK60Z-1 600 V < 15 0.8 A 25 W

TYPICAL RDS(on) = 13

EXTREMELY HIGH dv/dt CAPABILITY

ESD IMPROVED CAPABILITY TO-92 (Ammopack) TO-92

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED 3
2
1

IPAK
DESCRIPTION
The SuperMESH series is obtained through an
INTERNAL SCHEMATIC DIAGRAM
extreme optimization of STs well established strip-
based PowerMESH layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh products.

APPLICATIONS

AC ADAPTORS AND BATTERY CHARGERS

SWITH MODE POWER SUPPLIES (SMPS)

ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STQ1NK60ZR 1NK60ZR TO-92 BULK
STQ1NK60ZR-AP 1NK60ZR TO-92 AMMOPAK
STD1LNK60Z-1 D1LNK60Z IPAK TUBE

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STQ1NK60ZR - STD1LNK60Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
IPAK TO-92
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage 30 V
ID Drain Current (continuous) at TC = 25C 0.8 0.3 A
ID Drain Current (continuous) at TC = 100C 0.5 0.189 A
IDM (
) Drain Current (pulsed) 3.2 1.2 A
PTOT Total Dissipation at TC = 25C 25 3 W
Derating Factor 0.24 0.025 W/C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K) 800 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
Tj Operating Junction Temperature
-55 to 150 C
Tstg Storage Temperature
(
) Pulse width limited by safe operating area
(1) ISD 0.3A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.

THERMAL DATA
IPAK TO-92
Rthj-case Thermal Resistance Junction-case Max 5 -- C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 120 C/W
Rthj-lead Thermal Resistance Junction-lead Max -- 40 C/W
Tl Maximum Lead Temperature For Soldering 275 260 C
Purpose

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 0.8 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 60 mJ
(starting Tj = 25 C, ID = IAR, VDD = 50 V)

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVGSO Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V
Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the
usage of external components.

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ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)

ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 1 mA, VGS = 0 600 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 A
Drain Current (VGS = 0) VDS = Max Rating, TC = 125 C 50 A
IGSS Gate-body Leakage VGS = 20V 10 A
Current (VDS = 0)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 A 3 3.75 4.5 V
RDS(on) Static Drain-source On VGS = 10V, ID = 0.4 A 13 15
Resistance

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = V, ID = 0.4 A 0.5 S
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 94 pF
Coss Output Capacitance 17.6 pF
Crss Reverse Transfer 2.8 pF
Capacitance
Coss eq. (3) Equivalent Output VGS = 0V, VDS = 0V to 480V 11 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 300V, ID = 0.4 A 5.5 ns
tr Rise Time RG = 4.7 VGS = 10 V 5 ns
(Resistive Load see, Figure 3)
Qg Total Gate Charge VDD = 480V, ID = 0.8 A, 4.9 6.9 nC
Qgs Gate-Source Charge VGS = 10V 1 nC
Qgd Gate-Drain Charge 2.7 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 300V, ID = 0.4A 13 ns
tf Fall Time RG = 4.7 VGS = 10 V 28 ns
(Resistive Load see, Figure 3)
tr(Voff) Off-voltage Rise Time VDD =480V, ID = 0.8A, 28 ns
tf Fall Time RG = 4.7, VGS = 10V 12.5 ns
tc Cross-over Time (Inductive Load see, Figure 5) 48 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 0.8 A
ISDM (2) Source-drain Current (pulsed) 2.4 A
VSD (1) Forward On Voltage ISD = 0.8A, VGS = 0 1.6 V
trr Reverse Recovery Time ISD = 0.8 A, di/dt = 100A/s 140 ns
Qrr Reverse Recovery Charge VDD = 20V, Tj = 150C 224 nC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 3.2 A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.

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Safe Operating Area for IPAK Thermal Impedance for IPAK

Safe Operating Area for TO-92 Thermal Impedance for TO-92

Output Characteristics Transfer Characteristics

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Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

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Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature

Maximum Avalanche Energy vs Temperature Max Id Current vs Tc

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 STQ1NK60ZR - STD1LNK60Z-1

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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STQ1NK60ZR - STD1LNK60Z-1

TO-92 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.32 4.95 0.170 0.194
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.094 0.105
e1 1.14 1.40 0.044 0.055
L 12.70 15.49 0.50 0.610
R 2.16 2.41 0.085 0.094
S1 0.92 1.52 0.036 0.060
W 0.41 0.56 0.016 0.022
V 5 5

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TO-251 (IPAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H
C
A

A3
C2

A1

L2 D L
B3

B6

B5
B
3
=

=
B2

G
E

2
=

=
1

L1
0068771-E

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STQ1NK60ZR - STD1LNK60Z-1

TO-92 AMMOPACK

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A1 4.45 4.95 0.170 0.194
T 3.30 3.94 0.130 0.155
T1 1.6 0.06
T2 2.3 0.09
d 0.41 0.56 0.016 0.022
P0 12.5 12.7 12.9 0.49 0.5 0.51
P2 5.65 6.35 7.05 0.22 0.25 0.27
F1, F2 2.44 2.54 2.94 0.09 0.1 0.11
delta H -2 2 -0.08 0.08
W 17.5 18 19 0.69 0.71 0.74
W0 5.7 6 6.3 0.22 0.23 0.24
W1 8.5 9 9.25 0.33 0.35 0.36
W2 0.5 0.02
H 18.5 20.5 0.72 0.80
H0 15.5 16 16.5 0.61 0.63 0.65
H1 25 0.98
D0 3.8 4 4.2 0.15 0.157 0.16
t 0.9 0.035
L 11 0.43
l1 3 0.11
delta P -1 1 -0.04 0.04

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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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