DISCRETE SEMICONDUCTORS

DATA SHEET

J174; J175;
J176; J177
P-channel silicon field-effect
transistors
Product specification April 1995
File under Discrete Semiconductors, SC07
Philips Semiconductors Product specification

J174; J175;
P-channel silicon field-effect transistors
J176; J177

DESCRIPTION
Silicon symmetrical p-channel
junction FETs in a plastic TO-92
envelope and intended for application
with analog switches, choppers,
commutators etc.
A special feature is the
interchangeability of the drain and 1
handbook, halfpage
2
source connections. 3 d
g
s
PINNING MAM388

1 = source
2 = gate
3 = drain

Note: Drain and source are Fig.1 Simplified outline and symbol, TO-92.
interchangeable.

QUICK REFERENCE DATA

Drain-source voltage ± VDS max. 30 V
Gate-source voltage VGSO max. 30 V
Gate current −IG max. 50 mA
Total power dissipation
up to Tamb = 50 °C Ptot max. 400 mW

J174 J175 J176 J177

Drain current
min. 20 7 2 1.5 mA
−VDS = 15 V; VGS = 0 −IDSS
max. 135 70 35 20 mA

Drain-source ON-resistance
−VDS = 0.1 V; VGS = 0 RDS on max. 85 125 250 300 Ω

April 1995 2
Philips Semiconductors Product specification

J174; J175;
P-channel silicon field-effect transistors
J176; J177

RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage ± VDS max. 30 V
Gate-source voltage VGSO max. 30 V
Gate-drain voltage VGDO max. 30 V
Gate current (DC) −IG max. 50 mA
Total power dissipation
up to Tamb = 50 °C Ptot max. 400 mW
Storage temperature range Tstg −65 to +150 °C
Junction temperature Tj max. 150 °C

THERMAL RESISTANCE
From junction to ambient in free air Rth j-a = 250 K/W

STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified J174 J175 J176 J177
Gate cut-off current
VGS = 20 V; VDS = 0 IGSS max. 1 1 1 1 nA
Drain cut-off current
−VDS = 15 V; VGS = 10 V −IDSX max. 1 1 1 1 nA
Drain current
min. 20 7 2 1.5 mA
−VDS = 15 V; VGS = 10 V −IDSS
max. 135 70 35 20 mA
Gate-source breakdown voltage
IG = 1 µA; VDS = 0 V(BR)GSS min. 30 30 30 30 V
Gate-source cut-off voltage
min. 5 3 1 0.8 V
−ID = 10 nA; VDS = −15 V VGS off
max. 10 6 4 2.25 V
Drain-source ON-resistance
−VDS = 0.1 V; VGS = 0 RDSon max. 85 125 250 300 Ω

April 1995 3
Philips Semiconductors Product specification

J174; J175;
P-channel silicon field-effect transistors
J176; J177

DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Input capacitance, f = 1 MHz
VGS = 10 V; VDS = 0 V Cis typ. 8 pF
VGS = VDS = 0 Cis typ. 30 pF
Feedback capacitance, f = 1 MHz
VGS = 10 V; VDS = 0 V Crs typ. 4 pF
Switching times (see Fig.2 + 3) J174 J175 J176 J177
Delay time td typ. 2 5 15 20 ns
Rise time tr typ. 5 10 20 25 ns
Turn-on time ton typ. 7 15 35 45 ns
Storage time ts typ. 5 10 15 20 ns
Fall time tf typ. 10 20 20 25 ns
Turn-off time typ. 15 30 35 45 ns
toff

Test conditions: −VDD 10 6 6 6 V

VGS off 12 8 6 3 V
RL 560 1200 2000 2900 Ω
VGS on 0 0 0 0 V

handbook, halfpage −VDD VGSoff

90%

50 Ω INPUT

Vout 10%

RL
10% 10%

Vin D.U.T OUTPUT

90% 90%
50 Ω
tf tr
MBK292 ts td MBK293

Fig.2 Switching times test circuit. Fig.3 Input and output waveforms;
td + tr = ton ; ts + tf = toff.

April 1995 4
Philips Semiconductors Product specification

J174; J175;
P-channel silicon field-effect transistors
J176; J177

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

d A L

1
e1
2
D e

b1
L1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A b b1 c D d E e e1 L L1(1)

5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5

mm 2.54 1.27 2.5
5.0 0.40 0.56 0.40 4.4 1.4 3.6 12.7

Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT54 TO-92 SC-43 97-02-28

April 1995 5
Philips Semiconductors Product specification

J174; J175;
P-channel silicon field-effect transistors
J176; J177

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

April 1995 6