DISCRETE SEMICONDUCTORS

DATA SHEET

BF245A; BF245B; BF245C

N-channel silicon field-effect
transistors
Product specification 1996 Jul 30
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
Philips Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

FEATURES PINNING
• Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION
• Frequencies up to 700 MHz. 1 d drain
2 s source
APPLICATIONS 3 g gate
• LF, HF and DC amplifiers.

DESCRIPTION
1
handbook, halfpage 2
General purpose N-channel symmetrical junction 3 d
field-effect transistors in a plastic TO-92 variant package. g
s

MAM257
CAUTION
The device is supplied in an antistatic package. The
Fig.1 Simplified outline (TO-92 variant)
gate-source input must be protected against static
and symbol.
discharge during transport or handling.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VDS drain-source voltage − − ±30 V
VGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V −0.25 − −8 V
VGSO gate-source voltage open drain − − −30 V
IDSS drain current VDS = 15 V; VGS = 0
BF245A 2 − 6.5 mA
BF245B 6 − 15 mA
BF245C 12 − 25 mA
Ptot total power dissipation Tamb = 75 °C − − 300 mW
yfs forward transfer admittance VDS = 15 V; VGS = 0; 3 − 6.5 mS
f = 1 kHz; Tamb = 25 °C
Crs reverse transfer capacitance VDS = 20 V; VGS = −1 V; − 1.1 − pF
f = 1 MHz; Tamb = 25 °C

1996 Jul 30 2
Philips Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage − ±30 V
VGDO gate-drain voltage open source − −30 V
VGSO gate-source voltage open drain − −30 V
ID drain current − 25 mA
IG gate current − 10 mA
Ptot total power dissipation up to Tamb = 75 °C; − 300 mW
up to Tamb = 90 °C; note 1 − 300 mW
Tstg storage temperature −65 +150 °C
Tj operating junction temperature − 150 °C

Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm × 10 mm.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air 250 K/W
thermal resistance from junction to ambient 200 K/W

STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS = 0 −30 − V
VGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V −0.25 −8.0 V
VGS gate-source voltage ID = 200 µA; VDS = 15 V
BF245A −0.4 −2.2 V
BF245B −1.6 −3.8 V
BF245C −3.2 −7.5 V
IDSS drain current VDS = 15 V; VGS = 0; note 1
BF245A 2 6.5 mA
BF245B 6 15 mA
BF245C 12 25 mA
IGSS gate cut-off current VGS = −20 V; VDS = 0 − −5 nA
VGS = −20 V; VDS = 0; Tj = 125 °C − −0.5 µA

Note
1. Measured under pulse conditions: tp = 300 µs; δ ≤ 0.02.

1996 Jul 30 3
Philips Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Cis input capacitance VDS = 20 V; VGS = −1 V; f = 1 MHz − 4 − pF
Crs reverse transfer capacitance VDS = 20 V; VGS = −1 V; f = 1 MHz − 1.1 − pF
Cos output capacitance VDS = 20 V; VGS = −1 V; f = 1 MHz − 1.6 − pF
gis input conductance VDS = 15 V; VGS = 0; f = 200 MHz − 250 − µS
gos output conductance VDS = 15 V; VGS = 0; f = 200 MHz − 40 − µS
yfs forward transfer admittance VDS = 15 V; VGS = 0; f = 1 kHz 3 − 6.5 mS
VDS = 15 V; VGS = 0; f = 200 MHz − 6 − mS
yrs reverse transfer admittance VDS = 15 V; VGS = 0; f = 200 MHz − 1.4 − mS
yos output admittance VDS = 15 V; VGS = 0; f = 1 kHz − 25 − µS
fgfs cut-off frequency VDS = 15 V; VGS = 0; gfs = 0.7 of its − 700 − MHz
value at 1 kHz
F noise figure VDS = 15 V; VGS = 0; f = 100 MHz; − 1.5 − dB
RG = 1 kΩ (common source);
input tuned to minimum noise

MGE785 MGE789
−10 6
handbook, halfpage
handbook, halfpage ID
IGSS
(mA)
(nA) 5
−1
4

typ
−10−1 3

2
−10−2
1

−10−3 0
0 50 100 150 −4 −2 VGS (V) 0
Tj (°C)

VDS = 0; VGS = −20 V. VDS = 15 V; Tj = 25 °C.

Fig.2 Gate leakage current as a function of Fig.3 Transfer characteristics for BF245A;
junction temperature; typical values. typical values.

1996 Jul 30 4
Philips Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

MBH555 MGE787
6 15
handbook, halfpage handbook, halfpage
ID
(mA) ID
5
(mA)
VGS = 0 V
4 10

−0.5 V
2 5

1 −1 V

−1.5 V
0 0
0 10 VDS (V) 20 −4 −2 VGS (V) 0

VDS = 15 V; Tj = 25 °C. VDS = 15 V; Tj = 25 °C.

Fig.4 Output characteristics for BF245A; Fig.5 Transfer characteristics for BF245B;
typical values. typical values.

MBH553 MGE788
15 30
handbook, halfpage handbook, halfpage

ID ID
(mA) (mA)

VGS = 0 V
10 20

−0.5 V

−1 V
5 10
−1.5 V

−2 V

−2.5 V
0 0
0 10 VDS (V) 20 −10 −5 VGS (V) 0

VDS = 15 V; Tj = 25 °C. VDS = 15 V; Tj = 25 °C.

Fig.6 Output characteristics for BF245B; Fig.7 Transfer characteristics for BF245C;
typical values. typical values.

1996 Jul 30 5
Philips Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

MBH554 MGE775
30 4
handbook, halfpage handbook, halfpage
ID
ID
(mA)
(mA)
3
VGS = 0 V
20
VGS = 0 V

2 −0.5 V
−1 V

10
−2 V
1 −1 V
−3 V
−1.5 V
−4 V

0 0
0 10 VDS (V) 20 0 50 100 150
Tj (°C)

VDS = 15 V; Tj = 25 °C. VDS = 15 V.

Fig.8 Output characteristics for BF245C; Fig.9 Drain current as a function of junction
typical values. temperature; typical values for BF245A.

MGE776 MGE779
15 20
handbook, halfpage handbook, halfpage
ID
ID (mA)
(mA) 16

10 VGS = 0 V
12
VGS = 0 V

8
5 −2 V
−1 V
4
−2 V −4 V

0 0
0 50 100 150 0 50 100 Tj (°C) 150
Tj (°C)

VDS = 15 V. VDS = 15 V.

Fig.10 Drain current as a function of junction Fig.11 Drain current as a function of junction
temperature; typical values for BF245B. temperature; typical values for BF245C.

1996 Jul 30 6
Philips Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

MGE778 MGE780
103
handbook, halfpage
102 104
handbook, halfpage
10

gis bis brs Crs

(µA/V) gis (mA/V) (µA/V) (pF)
Crs
102 10 103 1
bis

brs
10 1 102 10−1

1 10−1 10 10−2
10 102 103 10 102 103
f (MHz) f (MHz)

VDS = 15 V; VGS = 0; Tamb = 25 °C.

VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.13 Common source reverse admittance as a
Fig.12 Input admittance; typical values. function of frequency; typical values.

MGE782 MGE783
10
gfs, halfpage
handbook,
103
handbook, halfpage
10

−bfs
gos bos
(mA/V)
8 (µA/V) (mA/V)
bos

102 1
6
gfs gos

4
10 10−1

2
−bfs

0 1 10−2
10 102 f (MHz) 103 10 102 103
f (MHz)

VDS = 15 V; VGS = 0; Tamb = 25 °C. VDS = 15 V; VGS = 0; Tamb = 25 °C.

Fig.14 Common-source forward transfer admittance Fig.15 Common-source output admittance as a

as a function of frequency; typical values. function of frequency; typical values.

1996 Jul 30 7
Philips Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

MGE777 MGE781
6 1.5
handbook, halfpage handbook, halfpage

Cis
(pF) Crs
(pF)
4
typ
typ
1

0 0.5
0 −2 −4 −6 −8 −10 0 −2 −4 −6 −8 −10
VGS (V) VGS (V)

VDS = 20 V; f = 1 MHz; Tamb = 25 °C. VDS = 20 V; f = 1 MHz; Tamb = 25 °C.

Fig.16 Input capacitance as a function of Fig.17 Reverse transfer capacitance as a function

gate-source voltage; typical values. of gate-source voltage; typical values.

MGE791 MGE784
8 −10
handbook, halfpage handbook,
V halfpage
GSoff
|yfs|
at ID = 10 nA
(mA/V)
BF245C (V) −8
BF245B
6
BF245A
−6

−4

2 BF245C
−2
BF245B

BF245A
0 −0
0 5 10 15 20 0 10 20 30
ID (mA)
IDSS at VGS = 0 (mA)

VDS = 15 V; f = 1 kHz; Tamb = 25 °C. VDS = 15 V; Tj = 25 °C.

Fig.18 Forward transfer admittance as a function of Fig.19 Gate-source cut-off voltage as a function of
drain current; typical values. drain current; typical values.

1996 Jul 30 8
Philips Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

MGE790 MGE786
103 3
handbook, halfpage
handbook, halfpage
RDSon
F
(kΩ)
(dB)
102
2
typ

10

1
BF245A
1
BF245B
BF245C

10−1 0
0 −1 −2 −3 −4 1 10 102 103
f (MHz)
VGS (V)

VDS = 0; f = 1 kHz; Tamb = 25 °C. VDS = 15 V; VGS = 0; RG = 1 kΩ; Tamb = 25 °C.

Input tuned to minimum noise.
Fig.20 Drain-source on-state resistance as a
function of gate-source voltage; Fig.21 Noise figure as a function of frequency;
typical values. typical values.

1996 Jul 30 9
Philips Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

PACKAGE OUTLINE

handbook, full pagewidth

0.40
min

4.2 max
1.7 5.2 max 12.7 min
1.4

1 0.48
0.40
4.8 2
max 2.54

3
0.66
0.56
(1) MBC015 - 1
2.5 max

Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.

Fig.22 TO-92 variant.

1996 Jul 30 10
Philips Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Jul 30 11