S29Gl-N Mirrorbit™ Flash Family
S29Gl-N Mirrorbit™ Flash Family
S29Gl-N Mirrorbit™ Flash Family
Publication Number S29GL-N_00 Revision B Amendment 3 Issue Date October 13, 2006
D a t a S h e e t
Advance Information
The Advance Information designation indicates that Spansion Inc. is developing one or more
specific products, but has not committed any design to production. Information presented in a
document with this designation is likely to change, and in some cases, development on the prod-
uct may discontinue. Spansion Inc. therefore places the following conditions upon Advance Infor-
mation content:
“This document contains information on one or more products under development at Spansion Inc. The
information is intended to help you evaluate this product. Do not design in this product without con-
tacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a
commitment to production has taken place. This designation covers several aspects of the prod-
uct life cycle, including product qualification, initial production, and the subsequent phases in the
manufacturing process that occur before full production is achieved. Changes to the technical
specifications presented in a Preliminary document should be expected while keeping these as-
pects of production under consideration. Spansion places the following conditions upon Prelimi-
nary content:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. The Preliminary status of this document indicates that product qualification has been completed,
and that initial production has begun. Due to the phases of the manufacturing process that require
maintaining efficiency and quality, this document may be revised by subsequent versions or modifica-
tions due to changes in technical specifications.”
Combination
Some data sheets will contain a combination of products with different designations (Advance In-
formation, Preliminary, or Full Production). This type of document will distinguish these products
and their designations wherever necessary, typically on the first page, the ordering information
page, and pages with DC Characteristics table and AC Erase and Program table (in the table
notes). The disclaimer on the first page refers the reader to the notice on this page.
Questions regarding these document designations may be directed to your local sales office.
Publication Number S29GL-N_00 Revision B Amendment 3 Issue Date October 13, 2006
D a t a S h e e t
General Description
The S29GL512/256/128N family of devices are 3.0V single power flash memory manufac-
tured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit, organized as
33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256 Mbit, organized as
16,777,216 words or 33,554,432 bytes. The S29GL128N is a 128 Mbit, organized as
8,388,608 words or 16,777,216 bytes. The devices have a 16-bit wide data bus that can also
function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed
either in the host system or in standard EPROM programmers.
Access times as fast as 90 ns (S29GL128N, S29GL256N), 100 ns (S29GL512N) are available.
Note that each access time has a specific operating voltage range (VCC) and an I/O voltage
range (VIO), as specified in the Product Selector Guide‚ on page 6 and the Ordering Infor-
mation‚ on page 12. The devices are offered in a 56-pin TSOP or 64-ball Fortified BGA
package. Each device has separate chip enable (CE#), write enable (WE#) and output enable
(OE#) controls.
Each device requires only a single 3.0 volt power supply for both read and write functions.
In addition to a VCC input, a high-voltage accelerated program (WP#/ACC) input provides
shorter programming times through increased current. This feature is intended to facilitate
factory throughput during system production, but may also be used in the field if desired.
The devices are entirely command set compatible with the JEDEC single-power-supply
Flash standard. Commands are written to the device using standard microprocessor write
timing. Write cycles also internally latch addresses and data needed for the programming and
erase operations.
The sector erase architecture allows memory sectors to be erased and reprogrammed
without affecting the data contents of other sectors. The device is fully erased when shipped
from the factory.
Device programming and erasure are initiated through command sequences. Once a program
or erase operation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6
(toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether
the operation is complete. To facilitate programming, an Unlock Bypass mode reduces com-
mand sequence overhead by requiring only two write cycles to program data instead of four.
The Enhanced VersatileI/O™ (VIO) control allows the host system to set the voltage levels
that the device generates and tolerates on all input levels (address, chip control, and DQ input
levels) to the same voltage level that is asserted on the VIO pin. This allows the device to
operate in a 1.8 V or 3 V system environment as required.
Hardware data protection measures include a low VCC detector that automatically inhibits
write operations during power transitions. Persistent Sector Protection provides in-sys-
tem, command-enabled protection of any combination of sectors using a single power supply
at VCC. Password Sector Protection prevents unauthorized write and erase operations in
any combination of sectors through a user-defined 64-bit password.
The Erase Suspend/Erase Resume feature allows the host system to pause an erase op-
eration in a given sector to read or program any other sector and then complete the erase
operation. The Program Suspend/Program Resume feature enables the host system to
pause a program operation in a given sector to read any other sector and then complete the
program operation.
The hardware RESET# pin terminates any operation in progress and resets the device,
after which it is then ready for a new operation. The RESET# pin may be tied to the system
reset circuitry. A system reset would thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power consumption in the standby mode when it detects specific voltage
levels on CE# and RESET#, or when addresses have been stable for a specified period of time.
The Secured Silicon Sector provides a 128-word/256-byte area for code or data that can
be permanently protected. Once this sector is protected, no further changes within the sector
can occur.
The Write Protect (WP#/ACC) feature protects the first or last sector by asserting a logic
low on the WP# pin.
MirrorBit flash technology combines years of Flash memory manufacturing experience to pro-
duce the highest levels of quality, reliability and cost effectiveness. The device electrically
erases all bits within a sector simultaneously via hot-hole assisted erase. The data is pro-
grammed using hot electron injection.
Table of Contents
Notice On Data Sheet Designations . . . . . . . . . . . ii Common Flash Memory Interface (CFI) . . . . . . 46
— Product Availability Table .................................................. 1 Table 8. CFI Query Identification String ................................ 46
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .6 Table 9. System Interface String ......................................... 47
S29GL512N ..............................................................................................................6 Table 10. Device Geometry Definition ................................... 48
S29GL256N, S29GL128N ....................................................................................6 Table 11. Primary Vendor-Specific Extended Query ................ 49
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Command Definitions . . . . . . . . . . . . . . . . . . . . . 50
Reading Array Data ...........................................................................................50
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .8
Reset Command .................................................................................................50
Special Package Handling Instructions ............................................................9
Autoselect Command Sequence ..................................................................... 51
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Enter Secured Silicon Sector/Exit Secured Silicon
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Sector Command Sequence ............................................................................. 51
S29GL512N ......................................................................................................... 11 Word Program Command Sequence ............................................................ 51
S29GL256N ........................................................................................................ 11 Unlock Bypass Command Sequence ........................................................ 52
S29GL128N ........................................................................................................ 11 Write Buffer Programming .......................................................................... 52
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 12 Accelerated Program .................................................................................... 53
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 13 Figure 1. Write Buffer Programming Operation ...................... 54
Table 1. Device Bus Operations ........................................... 13 Figure 2. Program Operation ............................................... 55
Word/Byte Configuration .................................................................................13 Program Suspend/Program Resume Command Sequence .................... 55
VersatileIOTM (VIO) Control ..............................................................................13 Figure 3. Program Suspend/Program Resume........................ 56
Requirements for Reading Array Data ......................................................... 14 Chip Erase Command Sequence ................................................................... 56
Page Mode Read .............................................................................................. 14 Sector Erase Command Sequence ................................................................ 57
Writing Commands/Command Sequences ................................................. 14 Figure 4. Erase Operation ................................................... 58
Write Buffer ..................................................................................................... 14 Erase Suspend/Erase Resume Commands .................................................. 58
Accelerated Program Operation ............................................................... 14 Lock Register Command Set Definitions .................................................... 59
Autoselect Functions ......................................................................................15 Password Protection Command Set Definitions ...................................... 59
Standby Mode ........................................................................................................15 Non-Volatile Sector Protection Command Set Definitions ..................60
Automatic Sleep Mode .......................................................................................15 Global Volatile Sector Protection Freeze Command Set .......................61
RESET#: Hardware Reset Pin ..........................................................................15 Volatile Sector Protection Command Set .................................................. 62
Output Disable Mode ........................................................................................ 16 Secured Silicon Sector Entry Command ..................................................... 62
Table 2. Sector Address Table–S29GL512N ........................... 16 Secured Silicon Sector Exit Command ........................................................ 62
Table 3. Sector Address Table–S29GL256N ........................... 28 Command Definitions ........................................................................................63
Table 4. Sector Address Table–S29GL128N ........................... 34 Table 12. Memory Array Commands (x16) ........................... 63
Autoselect Mode .................................................................................................37 Table 13. Sector Protection Commands (x16) ........................ 64
Table 5. Autoselect Codes (High Voltage Method) ................. 37 Table 14. Memory Array Commands (x8) ............................. 65
Sector Protection ................................................................................................38 Table 15. Sector Protection Commands (x8) .......................... 66
Persistent Sector Protection .......................................................................38 Write Operation Status . . . . . . . . . . . . . . . . . . . . . 67
Password Sector Protection ........................................................................38 DQ7: Data# Polling ............................................................................................ 67
WP# Hardware Protection .........................................................................38 Figure 5. Data# Polling Algorithm ........................................ 68
Selecting a Sector Protection Mode .........................................................38 RY/BY#: Ready/Busy# .......................................................................................68
Advanced Sector Protection ...........................................................................38 DQ6: Toggle Bit I ...............................................................................................69
Lock Register ........................................................................................................39 Figure 6. Toggle Bit Algorithm ............................................. 70
Table 6. Lock Register ........................................................ 39 DQ2: Toggle Bit II ............................................................................................... 71
Persistent Sector Protection ...........................................................................39 Reading Toggle Bits DQ6/DQ2 ...................................................................... 71
Dynamic Protection Bit (DYB) ...................................................................39 DQ5: Exceeded Timing Limits ......................................................................... 71
Persistent Protection Bit (PPB) ................................................................. 40 DQ3: Sector Erase Timer ................................................................................ 72
Persistent Protection Bit Lock (PPB Lock Bit) ...................................... 41 DQ1: Write-to-Buffer Abort ........................................................................... 72
Table 7. Sector Protection Schemes ..................................... 41 Table 16. Write Operation Status ......................................... 72
Persistent Protection Mode Lock Bit ........................................................... 41 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 73
Password Sector Protection ........................................................................... 42 Figure 7. Maximum Negative Overshoot Waveform ................ 73
Password and Password Protection Mode Lock Bit ............................... 42 Figure 8. Maximum Positive Overshoot Waveform.................. 73
64-bit Password ...................................................................................................43 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Persistent Protection Bit Lock (PPB Lock Bit) ...........................................43 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 74
Secured Silicon Sector Flash Memory Region ............................................43 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Write Protect (WP#) ....................................................................................... 44 Figure 9. Test Setup .......................................................... 75
Hardware Data Protection ..............................................................................45 Table 17. Test Specifications ............................................... 75
Low VCC Write Inhibit ................................................................................45 Key to Switching Waveforms . . . . . . . . . . . . . . . 76
Write Pulse Glitch Protection ....................................................................45 Figure 10. Input Waveforms and
Logical Inhibit ...................................................................................................45 Measurement Levels .......................................................... 76
Power-Up Write Inhibit ................................................................................45 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 77
S29GL256N, S29GL128N
VIO = 2.7–3.6 V 10 11
VCC = 2.7–3.6 V
VIO = 1.65–1.95 V 11
Speed Option
VIO = Regulated (3.0–3.6
VCC = Regulated (3.0–3.6 V) 90
V)
Block Diagram
RY/BY# DQ15–DQ0 (A-1)
VCC
Sector Switches
VSS
VIO
Erase Voltage Input/Output
Generator Buffers
RESET#
WE#
State
WP#/ACC Control
BYTE#
Command
Register
PGM Voltage
Generator
Y-Decoder Y-Gating
STB
Address Latch
AMax**–A0
Connection Diagrams
Connection Diagrams
A8 B8 C8 D8 E8 F8 G8 H8
NC A22 A231 VIO VSS A242 NC NC
A7 B7 C7 D7 E7 F7 G7 H7
A13 A12 A14 A15 A16 BYTE# DQ15/A-1 VSS
A6 B6 C6 D6 E6 F6 G6 H6
A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6
A5 B5 C5 D5 E5 F5 G5 H5
WE# RESET# A21 A19 DQ5 DQ12 VCC DQ4
A4 B4 C4 D4 E4 F4 G4 H4
RY/BY# WP#/ACC A18 A20 DQ2 DQ10 DQ11 DQ3
A3 B3 C3 D3 E3 F3 G3 H3
A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1
A2 B2 C2 D2 E2 F2 G2 H2
A3 A4 A2 A1 A0 CE# OE# VSS
A1 B1 C1 D1 E1 F1 G1 H1
NC NC NC NC NC VIO NC NC
Notes:
1. Ball C8 is NC on S29GL128N
2. Ball F8 is NC on S29GL256N and S29GL128N
Pin Description
A24–A0 = 25 Address inputs (512 Mb)
A23–A0 = 24 Address inputs (256 Mb)
A22–A0 = 23 Address inputs (128 Mb)
DQ14–DQ0 = 15 Data inputs/outputs
DQ15/A-1 = DQ15 (Data input/output, word mode), A-1 (LSB
Address input, byte mode)
CE# = Chip Enable input
OE# = Output Enable input
WE# = Write Enable input
WP#/ACC = Hardware Write Protect input;
Acceleration input
RESET# = Hardware Reset Pin input
BYTE# = Selects 8-bit or 16-bit mode
RY/BY# = Ready/Busy output
VCC = 3.0 volt-only single power supply
(see Product Selector Guide for speed options and
voltage supply tolerances)
VIO = Output Buffer power
VSS = Device Ground
NC = Pin Not Connected Internally
Logic Symbol
S29GL512N
25
A24–A0 16 or 8
DQ15–DQ0
CE# (A-1)
OE#
WE#
WP#/ACC
RESET#
VIO RY/BY#
BYTE#
S29GL256N
24
A23–A0 16 or 8
DQ15–DQ0
CE# (A-1)
OE#
WE#
WP#/ACC
RESET#
VIO RY/BY#
BYTE#
S29GL128N
23
A22–A0 16 or 8
DQ15–DQ0
CE# (A-1)
OE#
WE#
WP#/ACC
RESET#
VIO RY/BY#
BYTE#
Ordering Information
The ordering part number is formed by a valid combination of the following:
S29GL512N 11 F F I 01 0
PACKING TYPE
0 = Tray (standard; see note 1)
2 = 7” Tape and Reel
3 = 13” Tape and Reel
TEMPERATURE RANGE
I = Industrial (–40°C to +85°C)
SPEED OPTION
90 = 90 ns (Note 4)
10 = 100 ns (Note 4)
11 = 110 ns (Recommended)
DEVICE NUMBER/DESCRIPTION
S29GL128N, S29GL256N, S29GL512N
3.0 Volt-only, 512 Megabit (32 M x 16-Bit/64 M x 8-Bit) Page-Mode Flash Memory
Manufactured on 110 nm MirrorBitTM process technology
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of
specific valid combinations and to check on newly released combinations.
Notes:
1. Type 0 is standard. Specify other options as required. TSOP can be packed in Types 0 and 3; BGA
can be packed in Types 0, 2, 3.
2. TSOP package marking omits packing type designator from ordering part number.
3. BGA package marking omits leading “S29” and packing type designator from ordering part
number.
4. Contact a local sales representative for availability.
VCC ± VCC ±
Standby X X H X High-Z High-Z High-Z
0.3 V 0.3 V
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 11.5–12.5V, X = Don’t Care, SA = Sector
Address, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are AMax:A0 in word mode; AMax:A-1 in byte mode. Sector addresses are AMax:A16 in both modes.
2. If WP# = VIL, the first or last sector group remains protected. If WP# = VIH, the first or last sector is protected or
unprotected as determined by the method described in “Write Protect (WP#)”. All sectors are unprotected when
shipped from the factory (The Secured Silicon Sector may be factory protected depending on version ordered.)
3. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2, Figure 4,
and Figure 5).
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or word config-
uration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0–DQ15 are
active and controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins
DQ0–DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are
tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function.
Write Buffer
Write Buffer Programming allows the system write to a maximum of 16 words/32 bytes in one
programming operation. This results in faster effective programming time than the standard
programming algorithms. See Write Buffer‚ on page 14 for more information.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Un-
lock Bypass mode, temporarily unprotects any protected sector groups, and uses the higher
voltage on the pin to reduce the time required for program operations. The system would use
a two-cycle program command sequence as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that the WP#/ACC
pin must not be at VHH for operations other than accelerated programming, or device damage
may result. WP# has an internal pullup; when unconnected, WP# is at VIH.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect
mode. The system can then read autoselect codes from the internal register (which is sepa-
rate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode.
Refer to the Autoselect Mode‚ on page 37 and Autoselect Command Sequence‚ on page 51,
for more information.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby
mode. In this mode, current consumption is greatly reduced, and the outputs are placed in
the high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at
VIO ± 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET#
are held at VIH, but not within VIO ± 0.3 V, the device is in the standby mode, but the standby
current is greater. The device requires standard access time (tCE) for read access when the
device is in either of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current
until the operation is completed.
Refer to DC Characteristics‚ on page 74 for the standby current specification.
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector group pro-
tection verification, through identifier codes output on DQ7–DQ0. This mode is primarily
intended for programming equipment to automatically match a device to be programmed
with its corresponding programming algorithm. However, the autoselect codes can also be ac-
cessed in-system through the command register.
When using programming equipment, the autoselect mode requires VID on address pin A9.
Address pins A6, A3, A2, A1, and A0 must be as shown in Table 5 on page 37. In addition,
when verifying sector protection, the sector address must appear on the appropriate highest
order address bits (see Table 2 on page 16). Table 5 on page 37 shows the remaining address
bits that are don’t care. When all necessary bits have been set as required, the programming
equipment may then read the corresponding identifier code on DQ7–DQ0.
To access the autoselect codes in-system, the host system can issue the autoselect command
via the command register, as shown in Table 12 on page 63 and Table 14 on page 65. This
method does not require VID. Refer to the “Autoselect Command Sequence” section on page
51 for more information.
Manufacturer ID:
L L H X X VID X L X L L L 00 X 01h
Spansion Product
S29GL128N S29GL256N S29GL512N
Cycle 1 L L H 22 X 7Eh
Device ID
Cycle 3 H H H 22 X 01h
Cycle 1 L L H 22 X 7Eh
Device ID
Cycle 3 H H H 22 X 01h
Cycle 1 L L H 22 X 7Eh
Device ID
Cycle 3 H H H 22 X 01h
Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Sector Protection
The device features several levels of sector protection, which can disable both the program
and erase operations in certain sectors or sector groups:
Lock Register
The Lock Register consists of 3 bits (DQ2, DQ1, and DQ0). These DQ2, DQ1, DQ0 bits of the
Lock Register are programmable by the user. Users are not allowed to program both DQ2 and
DQ1 bits of the Lock Register to the 00 state. If the user tries to program DQ2 and DQ1 bits
of the Lock Register to the 00 state, the device aborts the Lock Register back to the default
11 state. The programming time of the Lock Register is same as the typical word program-
ming time without utilizing the Write Buffer of the device. During a Lock Register
programming sequence execution, the DQ6 Toggle Bit I toggles until the programming of the
Lock Register has completed to indicate programming status. All Lock Register bits are read-
able to allow users to verify Lock Register statuses.
The Customer Secured Silicon Sector Protection Bit is DQ0, Persistent Protection Mode Lock
Bit is DQ1, and Password Protection Mode Lock Bit is DQ2 are accessible by all users. Each of
these bits are non-volatile. DQ15-DQ3 are reserved and must be 1's when the user tries to
program the DQ2, DQ1, and DQ0 bits of the Lock Register. The user is not required to program
DQ2, DQ1 and DQ0 bits of the Lock Register at the same time. This allows users to lock the
Secured Silicon Sector and then set the device either permanently into Password Protection
Mode or Persistent Protection Mode and then lock the Secured Silicon Sector at separate in-
stances and time frames.
Secured Silicon Sector Protection allows the user to lock the Secured Silicon Sector area
Persistent Protection Mode Lock Bit allows the user to set the device permanently to op-
erate in the Persistent Protection Mode
Password Protection Mode Lock Bit allows the user to set the device permanently to op-
erate in the Password Protection Mode
states. They are called dynamic states because it is very easy to switch back and forth be-
tween the protected and un-protected conditions. This allows software to easily protect
sectors against inadvertent changes yet does not prevent the easy removal of protection
when changes are needed.
The DYB bits maybe set or cleared as often as needed. The PPB bits allow for a more static,
and difficult to change, level of protection. The PPB bits retain their state across power cycles
because they are Non-Volatile. Individual PPB bits are set with a program command but must
all be cleared as a group through an erase command.
The PPB Lock Bit adds an additional level of protection. Once all PPB bits are programmed to
the desired settings, the PPB Lock Bit may be set to the “freeze state”. Setting the PPB Lock
Bit to the “freeze state” disables all program and erase commands to the Non-Volatile PPB
bits. In effect, the PPB Lock Bit locks the PPB bits into their current state. The only way to
clear the PPB Lock Bit to the “unfreeze state” is to go through a power cycle, or hardware
reset. The Software Reset command does not clear the PPB Lock Bit to the “unfreeze state”.
System boot code can determine if any changes to the PPB bits are needed e.g. to allow new
system code to be downloaded. If no changes are needed then the boot code can set the PPB
Lock Bit to disable any further changes to the PPB bits during system operation.
The WP# write protect pin adds a final level of hardware protection. When this pin is low it is
not possible to change the contents of the WP# protected sectors. These sectors generally
hold system boot code. So, the WP# pin can prevent any changes to the boot code that could
override the choices made while setting up sector protection during system initialization.
It is possible to have sectors that have been persistently locked, and sectors that are left in
the dynamic state. The sectors in the dynamic state are all unprotected. If there is a need to
protect some of them, a simple DYB Set command sequence is all that is necessary. The DYB
Set and DYB Clear commands for the dynamic sectors switch the DYB bits to signify protected
and unprotected, respectively. If there is a need to change the status of the persistently
locked sectors, a few more steps are required. First, the PPB Lock Bit must be disabled to the
“unfreeze state” by either putting the device through a power-cycle, or hardware reset. The
PPB bits can then be changed to reflect the desired settings. Setting the PPB Lock Bit once
again to the “freeze state” locks the PPB bits, and the device operates normally again.
To achieve the best protection, execute the PPB Lock Bit Set command early in the boot code,
and protect the boot code by holding WP# = VIL.
Table 7 contains all possible combinations of the DYB bit, PPB bit, and PPB Lock Bit relating
to the status of the sector. In summary, if the PPB bit is set, and the PPB Lock Bit is set, the
sector is protected and the protection cannot be removed until the next power cycle or hard-
ware reset clears the PPB Lock Bit to “unfreeze state”. If the PPB bit is cleared, the sector can
be dynamically locked or unlocked. The DYB bit then controls whether or not the sector is
protected or unprotected. If the user attempts to program or erase a protected sector, the
device ignores the command and returns to read mode. A program command to a protected
sector enables status polling for approximately 1 µs before the device returns to read mode
without having modified the contents of the protected sector. An erase command to a pro-
tected sector enables status polling for approximately 50 µs after which the device returns to
read mode without having erased the protected sector. The programming of the DYB bit, PPB
bit, and PPB Lock Bit for a given sector can be verified by writing a DYB Status Read, PPB
Status Read, and PPB Lock Status Read commands to the device.
The Autoselect Sector Protection Verification outputs the OR function of the DYB bit and PPB
bit per sector basis. When the OR function of the DYB bit and PPB bit is a 1, the sector is either
protected by DYB or PPB or both. When the OR function of the DYB bit and PPB bit is a 0, the
sector is unprotected through both the DYB and PPB.
64-bit Password
The 64-bit Password is located in its own memory space and is accessible through the use of
the Password Program and Password Read commands. The password function works in con-
junction with the Password Protection Mode Lock Bit, which when programmed, prevents the
Password Read command from reading the contents of the password on the pins of the
device.
ESN or determined by
000000h–000007h ESN
customer
Determined by
customer
Determined by
000008h–00007Fh Unavailable
customer
The system accesses the Secured Silicon Sector through a command sequence (see “Write
Protect (WP#)”). After the system has written the Enter Secured Silicon Sector command se-
quence, it may read the Secured Silicon Sector by using the addresses normally occupied by
the first sector (SA0). This mode of operation continues until the system issues the Exit Se-
cured Silicon Sector command sequence, or until power is removed from the device. On
power-up, or following a hardware reset, the device reverts to sending commands to sector
SA0.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To ini-
tiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one.
1Dh 3Ah 0000h VPP Min. voltage (00h = no VPP pin present)
1Eh 3Ch 0000h VPP Max. voltage (00h = no VPP pin present)
20h 40h 0007h Typical timeout for Min. size buffer write 2N µs (00h = not supported)
22h 44h 0000h Typical timeout for full chip erase 2N ms (00h = not supported)
23h 46h 0003h Max. timeout for byte/word write 2N times typical
24h 48h 0005h Max. timeout for buffer write 2N times typical
25h 4Ah 0004h Max. timeout per individual block erase 2N times typical
26h 4Ch 0000h Max. timeout for full chip erase 2N times typical (00h = not supported)
Erase Suspend
46h 8Ch 0002h
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
Sector Protect
47h 8Eh 0001h
0 = Not Supported, X = Number of sectors in per group
Simultaneous Operation
4Ah 94h 0000h
00 = Not Supported, X = Number of Sectors in Bank
WP# Protection
4Fh 9Eh 00xxh 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors
top WP# protect
Program Suspend
50h A0h 0001h
00h = Not Supported, 01h = Supported
Command Definitions
Writing specific address and data commands or sequences into the command register initiates
device operations. Table 12 on page 63 and Table 14 on page 65 define the valid register
command sequences. Writing incorrect address and data values or writing them in the im-
proper sequence may place the device in an unknown state. A reset command is then
required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data
is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Char-
acteristics section for timing diagrams.
Reset Command
Writing the reset command resets the device to the read or erase-suspend-read mode. Ad-
dress bits are don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command se-
quence before erasing begins. This resets the device to the read mode. Once erasure begins,
however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command se-
quence before programming begins. This resets the device to the read mode. If the program
command sequence is written while the device is in the Erase Suspend mode, writing the
reset command returns the device to the erase-suspend-read mode. Once programming be-
gins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command
sequence. Once in the autoselect mode, the reset command must be written to return to the
read mode. If the device entered the autoselect mode while in the Erase Suspend mode, writ-
ing the reset command returns the device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the
device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must
write the Write-to-Buffer-Abort Reset command sequence to reset the device for the next
operation.
Once the specified number of write buffer locations have been loaded, the system must then
write the Program Buffer to Flash command at the sector address. Any other address and data
combination aborts the Write Buffer Programming operation. The device then begins pro-
gramming. Data polling should be used while monitoring the last address location loaded into
the write buffer. DQ7, DQ6, DQ5, and DQ1 should be monitored to determine the device sta-
tus during Write Buffer Programming.
The write-buffer programming operation can be suspended using the standard program sus-
pend/resume commands. Upon successful completion of the Write Buffer Programming
operation, the device is ready to execute the next command.
The Write Buffer Programming Sequence can be aborted in the following ways:
Load a value that is greater than the page buffer size during the Number of Locations to
Program step.
Write to an address in a sector different than the one specified during the
Write-Buffer-Load command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the
Starting Address during the write buffer data loading stage of the operation.
Write data other than the Confirm Command after the specified number of data load cy-
cles.
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location
loaded), DQ6 = toggle, and DQ5=0. A Write-to-Buffer-Abort Reset command sequence must
be written to reset the device for the next operation.
Write buffer programming is allowed in any sequence. Note that the Secured Silicon sector,
autoselect, and CFI functions are unavailable when a program operation is in progress. This
flash device is capable of handling multiple write buffer programming operations on the same
write buffer address range without intervening erases. Any bit in a write buffer address
range cannot be programmed from 0 back to a 1. Attempting to do so may cause the
device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was
successful. However, a succeeding read shows that the data is still 0. Only erase operations
can convert a 0 to a 1.
Accelerated Program
The device offers accelerated program operations through the WP#/ACC pin. When the sys-
tem asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass
mode. The system may then write the two-cycle Unlock Bypass program command sequence.
The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or
device damage may result. WP# has an internal pullup; when unconnected, WP# is at VIH.
Figure 2, on page 55 illustrates the algorithm for the program operation. Refer to the Erase
and Program Operations subsection of the “AC Characteristics” section on page 77 for param-
eters, and Figure 14, on page 81 for timing diagrams.
Yes
WC = 0 ?
No Write to a different
sector address
Abort Write to Yes
Buffer Operation?
Write to buffer ABORTED.
No Must write “Write-to-buffer
Abort Reset” command
(Note 1) Write next address/data pair sequence to return
to read mode.
WC = WC - 1
Yes
(Note 2) DQ7 = Data?
No
START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
No
Increment Address Last Address?
Yes
Programming
Completed
as in the standard program operation. See Write Operation Status‚ on page 67 for more
information.
The system must write the Program Resume command (address bits are don’t care) to exit
the Program Suspend mode and continue the programming operation. Further writes of the
Resume command are ignored. Another Program Suspend command can be written after the
device has resume programming.
Program Operation
or Write-to-Buffer
Sequence in Progress
No Done
reading?
Yes
Write Program Resume
Write address/data Command Sequence
XXXh/30h
Device reverts to
operation prior to
Program Suspend
tion. If that occurs, the chip erase command sequence should be reinitiated once the device
has returned to reading array data, to ensure data integrity.
Figure 4, on page 58 illustrates the algorithm for the erase operation. Note that the Secured
Silicon Sector, autoselect, and CFI functions are unavailable when an erase opera-
tion in is progress. Refer to the table Erase and Program Operations‚ on page 80 for
parameters, and Figure 16, on page 82 section for timing diagrams.
START
Write Erase
Command Sequence
(Notes 1, 2)
Yes
Erasure Completed
Notes:
1. See Table 12 on
page 63 and
Table 14 on
page 65 for
program
command
Figure 4. Erase Operation
In the erase-suspend-read mode, the system can also issue the autoselect command se-
quence. Refer to the Autoselect Mode‚ on page 37 section and Autoselect Command
Sequence‚ on page 51 for details.
To resume the sector erase operation, the system must write the Erase Resume command.
The address of the erase-suspended sector is required when writing this command. Further
writes of the Resume command are ignored. Another Erase Suspend command can be written
after the chip has resumed erasing. It is important to allow an interval of at least 5 ms be-
tween Erase Resume and Erase Suspend.
Once the Password is written and verified, the Password Protection Mode Lock Bit in the Lock
Register must be programmed in order to prevent verification. The Password Program com-
mand is only capable of programming 0s. Programming a 1 after a cell is programmed as a
0 results in a time-out by the Embedded Program AlgorithmTM with the cell remaining as a 0.
The password is all F’s when shipped from the factory. All 64-bit password combinations are
valid as a password.
The Password Read command is used to verify the Password. The Password is verifiable only
when the Password Protection Mode Lock Bit in the Lock Register is not programmed. If the
Password Protection Mode Lock Bit in the Lock Register is programmed and the user attempts
to read the Password, the device always drives all F’s onto the DQ databus.
The lower two address bits (A1–A0) for word mode and (A1–A-1) for by byte mode are valid
during the Password Read, Password Program, and Password Unlock commands. Writing a
1 to any other address bits (AMAX-A2) aborts the Password Read and Password Pro-
gram commands.
The Password Unlock command is used to clear the PPB Lock Bit to the unfreeze state so that
the PPB bits can be modified. The exact password must be entered in order for the unlocking
function to occur. This 64-bit Password Unlock command sequence takes at least 2 µs to pro-
cess each time to prevent a hacker from running through the all 64-bit combinations in an
attempt to correctly match the password. If another password unlock is issued before the
64-bit password check execution window is completed, the command is ignored. If the wrong
address or data is given during password unlock command cycle, the device may enter the
write-to-buffer abort state. In order to exit the write-to-abort state, the
write-to-buffer-abort-reset command must be given. Otherwise the device hangs.
The Password Unlock function is accomplished by writing Password Unlock command and data
to the device to perform the clearing of the PPB Lock Bit to the unfreeze state. The password
is 64 bits long. A1 and A0 are used for matching in word mode and A1, A0, A-1 in byte mode.
Writing the Password Unlock command does not need to be address order specific. An exam-
ple sequence is starting with the lower address A1-A0=00, followed by A1-A0=01, A1-A0=10,
and A1-A0=11 if the device is configured to operate in word mode.
Approximately 2 µs is required for unlocking the device after the valid 64-bit password is
given to the device. It is the responsibility of the microprocessor to keep track of the entering
the portions of the 64-bit password with the Password Unlock command, the order, and when
to read the PPB Lock bit to confirm successful password unlock. In order to re-lock the device
into the Password Protection Mode, the PPB Lock Bit Set command can be re-issued.
Note: The Password Protection Command Set Exit command must be issued after the exe-
cution of the commands listed previously to reset the device to read mode. Otherwise the
device hangs.
Note: Issuing the Password Protection Command Set Exit command re-enables reads and
writes for the main memory.
The PPB Program command is used to program, or set, a given PPB bit. Each PPB bit is indi-
vidually programmed (but is bulk erased with the other PPB bits). The specific sector address
(A24-A16 for S29GL512N, A23-A16 for S29GL256N, A22-A16 for S29GL128N) is written at
the same time as the program command. If the PPB Lock Bit is set to the freeze state, the
PPB Program command does not execute and the command times-out without programming
the PPB bit.
All PPB Erase Command
The All PPB Erase command is used to erase all PPB bits in bulk. There is no means for indi-
vidually erasing a specific PPB bit. Unlike the PPB program, no specific sector address is
required. However, when the All PPB Erase command is issued, all Sector PPB bits are erased
in parallel. If the PPB Lock Bit is set to freeze state, the ALL PPB Erase command does not
execute and the command times-out without erasing the PPB bits.
The device preprograms all PPB bits prior to erasing when issuing the All PPB Erase command.
Also note that the total number of PPB program/erase cycles has the same endurance as the
flash memory array.
PPB Status Read Command
The programming state of the PPB for a given sector can be verified by writing a PPB Status
Read Command to the device. This requires an initial access time latency.
The Non-Volatile Sector Protection Command Set Exit command must be issued after
the execution of the commands listed previously to reset the device to read mode.
Note that issuing the Non-Volatile Sector Protection Command Set Exit command
re-enables reads and writes for the main memory.
Command Definitions
Table 12. Memory Array Commands (x16)
Bus Cycles (Notes 1–5)
Cycles
Command Sequence First Second Third Fourth Fifth Sixth
(Notes) Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Asynchronous Read (6) 1 RA RD
Reset (7) 1 XXX F0
Manufacturer ID 4 555 AA 2AA 55 555 90 X00 01
Device ID (8) 6 555 AA 2AA 55 555 90 X01 227E X0E Data X0F Data
select
Auto-
Mode
Legend:
X = Don’t care. PD = Program Data. Data latches on the rising edge of WE# or CE#
RA = Read Address. pulse, whichever occurs first.
RD = Read Data. SA = Sector Address. Any address that falls within a specified sector.
PA = Program Address. Addresses latch on the falling edge of WE# See Tables 2–4 for sector address ranges.
or CE# pulse, whichever occurs later. WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes:
1. See Table 1 on page 13 for description of bus operations. 11. Command is valid when device is ready to read array data or
2. All values are in hexadecimal. when device is in autoselect mode.
3. Shaded cells indicate read cycles. 12. Total number of cycles in the command sequence is determined
4. Address and data bits not specified in table, legend, or notes are by the number of words written to the write buffer.
don’t cares (each hex digit implies 4 bits of data). 13. Command sequence resets device for next command after
5. Writing incorrect address and data values or writing them in the write-to-buffer operation.
improper sequence may place the device in an unknown state. 14. Requires Entry command sequence prior to execution. Unlock
The system must write the reset command to return reading Bypass Reset command is required to return to reading array
array data. data.
6. No unlock or command cycles required when bank is reading 15. System may read and program in non-erasing sectors, or enter
array data. the autoselect mode, when in the Erase Suspend mode. The
7. Reset command is required to return to reading array data in Erase Suspend command is valid only during a sector erase
certain cases. See Reset Command section for details. operation.
8. Data in cycles 5 and 6 are listed in Table 5 on page 37. 16. Erase Resume command is valid only during the Erase Suspend
mode.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. PPB Status Read provides the same data but in 17. Requires Entry command sequence prior to execution. Secured
inverted form. Silicon Sector Exit Reset command is required to exit this mode;
device may otherwise be placed in an unknown state.
10. If DQ7 = 1, region is factory serialized and protected. If DQ7 =
0, region is unserialized and unprotected when shipped from
factory. See Secured Silicon Sector Flash Memory Region on
page 43 for more information.
Cycles
Command Sequence First Second Third Fourth Fifth Sixth Seventh
(Notes) Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Command Set Entry (5) 3 555 AA 2AA 55 555 40
Lock Program (6) 2 XX A0 XXX Data
Register
Bits Read (6) 1 00 Data
Command Set Exit (7) 2 XX 90 XX 00
Command Set Entry (5) 3 555 AA 2AA 55 555 60
Program (8) 2 XX A0 PWAx PWDx
Password
Read (9) 4 XXX PWD0 01 PWD1 02 PWD2 03 PWD3
Protection
Unlock (10) 7 00 25 00 03 00 PWD0 01 PWD1 02 PWD2 03 PWD3 00 29
Command Set Exit (7) 2 XX 90 XX 00
Command Set Entry (5) 3 555 AA 2AA 55 555 C0
Non-Volatile PPB Program (11) 2 XX A0 SA 00
Sector All PPB Erase (11, 12) 2 XX 80 00 30
Protection (PPB) PPB Status Read 1 SA RD(0)
Command Set Exit (7) 2 XX 90 XX 00
Global Command Set Entry (5) 3 555 AA 2AA 55 555 50
Volatile Sector PPB Lock Bit Set 2 XX A0 XX 00
Protection
PPB Lock Bit Status Read 1 XXX RD(0)
Freeze
(PPB Lock) Command Set Exit (7) 2 XX 90 XX 00
Command Set Entry (5) 3 555 AA 2AA 55 555 E0
Volatile Sector DYB Set 2 XX A0 SA 00
Protection DYB Clear 2 XX A0 SA 01
(DYB) DYB Status Read 1 SA RD(0)
Command Set Exit (7) 2 XX 90 XX 00
Legend:
X = Don’t care. PWA = Password Address. Address bits A1 and A0 are used to select
RA = Address of the memory location to be read. each 16-bit portion of the 64-bit entity.
SA = Sector Address. Any address that falls within a specified sector. PWD = Password Data.
See Tables 2–4 for sector address ranges. RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0. If
unprotected, DQ0 = 1.
Notes:
1. All values are in hexadecimal. 6. No unlock or command cycles required when bank is reading
2. Shaded cells indicate read cycles. array data.
3. Address and data bits not specified in table, legend, or notes are 7. Exit command must be issued to reset the device into read
don’t cares (each hex digit implies 4 bits of data). mode; device may otherwise be placed in an unknown state.
4. Writing incorrect address and data values or writing them in the 8. Entire two bus-cycle sequence must be entered for each portion
improper sequence may place the device in an unknown state. of the password.
The system must write the reset command to return the device 9. Full address range is required for reading password.
to reading array data.
10. Password may be unlocked or read in any order. Unlocking
5. Entry commands are required to enter a specific mode to enable requires the full password (all seven cycles).
instructions only available within that mode.
11. ACC must be at VIH when setting PPB or DYB.
12. “All PPB Erase” command pre-programs all PPBs before erasure
to prevent over-erasure.
Cycles
Command Sequence First Second Third Fourth Fifth Sixth
(Notes) Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Asynchronous Read (6) 1 RA RD
Reset (7) 1 XXX F0
Manufacturer ID 4 AAA AA 555 55 AAA 90 X00 01
Device ID (8) 6 AAA AA 555 55 AAA 90 X02 XX7E X1C Data X1E Data
select
Auto-
Mode
Legend:
X = Don’t care. PD = Program Data. Data latches on the rising edge of WE# or CE#
RA = Read Address. pulse, whichever occurs first.
RD = Read Data. SA = Sector Address. Any address that falls within a specified sector.
PA = Program Address. Addresses latch on the falling edge of WE# See Tables 2–4 for sector address ranges.
or CE# pulse, whichever occurs later. WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes:
1. See Table 1 on page 13 for description of bus operations. 11. Command is valid when device is ready to read array data or
2. All values are in hexadecimal. when device is in autoselect mode.
3. Shaded cells indicate read cycles. 12. Total number of cycles in the command sequence is determined
4. Address and data bits not specified in table, legend, or notes are by the number of words written to the write buffer.
don’t cares (each hex digit implies 4 bits of data). 13. Command sequence resets device for next command after
5. Writing incorrect address and data values or writing them in the write-to-buffer operation.
improper sequence may place the device in an unknown state. 14. Requires Entry command sequence prior to execution. Unlock
The system must write the reset command to return reading Bypass Reset command is required to return to reading array
array data. data.
6. No unlock or command cycles required when bank is reading 15. System may read and program in non-erasing sectors, or enter
array data. the autoselect mode, when in the Erase Suspend mode. The
7. Reset command is required to return to reading array data in Erase Suspend command is valid only during a sector erase
certain cases. See Reset Command section for details. operation.
8. Data in cycles 5 and 6 are listed in Table 5 on page 37. 16. Erase Resume command is valid only during the Erase Suspend
mode.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. PPB Status Read provides the same data but in 17. Requires Entry command sequence prior to execution. Secured
inverted form. Silicon Sector Exit Reset command is required to exit this mode;
device may otherwise be placed in an unknown state.
10. If DQ7 = 1, region is factory serialized and protected. If DQ7 =
0, region is unserialized and unprotected when shipped from
factory. See Secured Silicon Sector Flash Memory Region on
page 43 for more information.
Cycles
Command Sequence 1st/8th 2nd/9th 3rd/10th 4th/11th 5th 6th 7th
(Notes) Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Command Set Entry (5) 3 AAA AA 555 55 AAA 40
Lock Program (6) 2 XXX A0 XXX Data
Register
Bits Read (6) 1 00 Data
Command Set Exit (7) 2 XXX 90 XXX 00
Command Set Entry (5) 3 AAA AA 555 55 AAA 60
Program (8) 2 XXX A0 PWAx PWDx
00 PWD0 01 PWD1 02 PWD2 03 PWD3 04 PWD4 05 PWD5 06 PWD6
Password Read (9) 8
07 PWD7
Protection
00 25 00 03 00 PWD0 01 PWD1 02 PWD2 03 PWD3 04 PWD4
Unlock (10) 11
05 PWD5 06 PWD6 07 PWD7 00 29
Command Set Exit (7) 2 XX 90 XX 00
Command Set Entry (5) 3 AAA AA 555 55 AAA C0
Non-Volatile PPB Program (11) 2 XXX A0 SA 00
Sector All PPB Erase (11, 12) 2 XXX 80 00 30
Protection (PPB) PPB Status Read 1 SA RD(0)
Command Set Exit (7) 2 XXX 90 XXX 00
Global Command Set Entry (5) 3 AAA AA 555 55 AAA 50
Volatile Sector PPB Lock Bit Set 2 XXX A0 XXX 00
Protection
PPB Lock Bit Status Read 1 XXX RD(0)
Freeze
(PPB Lock) Command Set Exit (7) 2 XXX 90 XX 00
Command Set Entry (5) 3 AAA AA 555 55 AAA E0
Volatile Sector DYB Set 2 XXX A0 SA 00
Protection DYB Clear 2 XXX A0 SA 01
(DYB) DYB Status Read 1 SA RD(0)
Command Set Exit (7) 2 XXX 90 XXX 00
Legend:
X = Don’t care. PWA = Password Address. Address bits A1 and A0 are used to select
RA = Address of the memory location to be read. each 16-bit portion of the 64-bit entity.
SA = Sector Address. Any address that falls within a specified sector. PWD = Password Data.
See Tables 2–4 for sector address ranges. RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0. If
unprotected, DQ0 = 1.
Notes:
1. All values are in hexadecimal. 6. No unlock or command cycles required when bank is reading
2. Shaded cells indicate read cycles. array data.
3. Address and data bits not specified in table, legend, or notes are 7. Exit command must be issued to reset the device into read
don’t cares (each hex digit implies 4 bits of data). mode; device may otherwise be placed in an unknown state.
4. Writing incorrect address and data values or writing them in the 8. Entire two bus-cycle sequence must be entered for each portion
improper sequence may place the device in an unknown state. of the password.
The system must write the reset command to return the device 9. Full address range is required for reading password.
to reading array data.
10. Password may be unlocked or read in any order. Unlocking
5. Entry commands are required to enter a specific mode to enable requires the full password (all seven cycles).
instructions only available within that mode.
11. ACC must be at VIH when setting PPB or DYB.
12. “All PPB Erase” command pre-programs all PPBs before erasure
to prevent over-erasure.
START
Read DQ15–DQ0
Addr = VA
Yes
DQ7 = Data?
No
No DQ5 = 1
Yes
Read DQ15–DQ0
Addr = VA
Yes
DQ7 = Data?
No
FAIL PASS
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid
address is any sector address within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simulta-
neously with DQ5.
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Al-
gorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final
WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY#
pins can be tied together in parallel with a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes pro-
gramming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read
mode, the standby mode, or in the erase-suspend-read mode. Table 16 on page 72 shows
the outputs for RY/BY#.
START
Read DQ7–DQ0
Read DQ7–DQ0
Toggle Bit No
= Toggle?
Yes
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
Toggle Bit No
= Toggle?
Yes
Program/Erase
Operation Not Program/Erase
Complete, Write Operation Complete
Reset Command
Note:
The system should recheck the toggle bit even if DQ5 = 1
because the toggle bit may stop toggling as DQ5 changes to
1. See the subsections on DQ6 and DQ2 for more
information.
Program-Suspended
Program Program- Invalid (not allowed) 1
Sector
Suspend Suspend
Mode Read Non-Program
Data 1
Suspended Sector
Erase-Suspended
Erase- 1 No toggle 0 N/A Toggle N/A 1
Sector
Erase Suspend
Read Non-Erase
Suspend Data 1
Suspended Sector
Mode
Erase-Suspend-Program
DQ7# Toggle 0 N/A N/A N/A 0
(Embedded Program)
Notes:
1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the
maximum timing limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for
further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation
20 ns 20 ns 20 ns
+0.8 V VCC
+2.0 V
–0.5 V VCC
+0.5 V
–2.0 V
2.0 V
20 ns 20 ns 20 ns
Figure 7. Maximum Negative Overshoot Waveform Figure 8. Maximum Positive Overshoot Waveform
Operating Ranges
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Supply Voltages
VCC . . . . . . . . . . . . . . . . . . . . . . . . . +2.7 V to +3.6 V or +3.0 V to 3.6 V
VIO (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.65 V to 1.95 V or VCC
Notes:
1. Operating ranges define those limits between which the functionality of the device
is guaranteed.
2. See Product Selector Guide‚ on page 6.
DC Characteristics
CMOS Compatible
WP/ACC: ±2.0
VIN = VSS to VCC,
ILI Input Load Current (1) µA
VCC = VCC max
Others: ±1.0
ICC3 VCC Active Erase/Program Current (2, 3) CE# = VIL, OE# = VIH, VCC = VCCmax 50 90 mA
WP#/ACC
10 20
CE# = VIL, OE# = VIH, VCC = VCCmax, pin
IACC ACC Accelerated Program Current mA
WP#/ACC = VIH
VCC pin 50 90
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
3. Not 100% tested.
4. Automatic sleep mode enables the lower power mode when addresses remain stable tor tACC + 30 ns.
5. VIO = 1.65–1.95 V or 2.7–3.6 V
6. VCC = 3 V and VIO = 3V or 1.8V. When VIO is at 1.8V, I/O pins cannot operate at 3V.
Test Conditions
3.3 V
2.7 kΩ
Device
Under
Test
CL 6.2 kΩ
Steady
Changing from H to L
Changing from L to H
VIO
Input 0.5 VIO Measurement Level 0.5 VIO V Output
0.0 V
Note: If VIO < VCC, the input measurement reference level is 0.5 VIO.
Figure 10. Input Waveforms and
Measurement Levels
AC Characteristics
Read-Only Operations
Parameter Speed Options
Description Test Setup
90
JEDEC Std. 100 110 110 Unit
(Note 6)
Read Min 0 ns
Output Enable Hold Time
tOEH
(Note 1) Toggle and
Min 10 ns
Data# Polling
Notes:
1. Not 100% tested.
2. CE#, OE# = VIL
3. OE# = VIL
4. See Figure 9, on page 75 and Table 17 on page 75 for test specifications.
5. Unless otherwise indicated, AC specifications for 90 ns, 100 ns, and 110 ns speed options are tested with VIO = VCC = 3 V. AC specifications
for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
6. 90 ns speed option only applicable to S29GL128N and S29GL256N.
AC Characteristics
tRC
WE# tCE
tOH
HIGH Z HIGH Z
Outputs Output Valid
RESET#
RY/BY#
0V
A2-A0* Aa Ab Ac Ad
tPACC tPACC tPACC
tACC
Data Bus Qa Qb Qc Qd
CE#
OE#
* Figure shows word mode. Addresses are A2–A-1 for byte mode.
Figure 12. Page Read Timings
AC Characteristics
Hardware Reset (RESET#)
Parameter
Notes:
1. Not 100% tested. If ramp rate is equal to or faster than 1V/100µs with a falling edge of the RESET# pin initiated, the RESET# pin needs to
be held low only for 100µs for power-up.
2. Next generation devices may have different reset speeds. To increase system design considerations, please refer to the “Advance
Information on S29GL-P Hardware Reset (RESET#) and Power-up Sequence” section for advance reset speeds on S29GL-P devices.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP tRH
AC Characteristics
Erase and Program Operations
Parameter Speed Options
90
JEDEC Std. Description 100 110 110 Unit
(Note 6)
tAVAV tWC Write Cycle Time (Note 1) Min 90 100 110 110 ns
Notes:
1. Not 100% tested.
2. See the Erase And Programming Performance‚ on page 87 for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns, 100 ns, and 110 ns speed options are tested with VIO = VCC = 3 V. AC specifications
for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
6. 90 ns speed option only applicable to S29GL128N and S29GL256N.
AC Characteristics
Program Command Sequence (last two cycles) Read Status Data (last two cycles)
tWC tAS
Addresses 555h PA PA PA
tAH
CE#
tCH
OE#
tWP tWHWH1
WE#
tWPH
tCS
tDS
tDH
tBUSY tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
VHH
Notes:
1. Not 100% tested.
2. CE#, OE# = VIL
3. OE# = VIL
4. See Figure 9, on page 75 and Table 17 on page 75 for test specifications.
AC Characteristics
tWC tAS
Addresses 2AAh SA VA VA
555h for chip erase
tAH
CE#
OE# tCH
tWP
WE#
tWPH tWHWH2
tCS
tDS
tDH
In
Data 55h 30h Progress Complete
tBUSY tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status‚ on
page 67).
2. These waveforms are for the word mode.
Figure 16. Chip/Sector Erase Operation Timings
AC Characteristics
tRC
Addresses VA VA VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH tDF
WE#
tOH
High Z
DQ7 Complement Complement True Valid Data
High Z
DQ6–DQ0 Status Data Status Data True Valid Data
tBUSY
RY/BY#
Note:
1. VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
2. tOE for data polling is 45 ns when VIO = 1.65 to 2.7 V and is 35 ns when VIO = 2.7 to 3.6 V
AC Characteristics
tAHT tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
tOE
DQ2 and DQ6 Valid Data Valid Valid Valid Valid Data
Status Status Status
(first read) (second read) (stops toggling)
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command
sequence, last status read cycle, and array data read cycle
Figure 18. Toggle Bit Timings (During Embedded Algorithms)
Enter
Embedded Erase Enter Erase Erase
Erasing Suspend Suspend Program Resume
WE# Erase Erase Suspend Erase Erase Suspend Erase Erase
Read Suspend Read Complete
Program
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE#
or CE# to toggle DQ2 and DQ6.
Figure 19. DQ2 vs. DQ6
AC Characteristics
Alternate CE# Controlled Erase and Program Operations-
S29GL128N, S29GL256N, S29GL512N
90
JEDEC Std. Description (Note 6) 100 110 110 Unit
tAVAV tWC Write Cycle Time (Note 1) Min 90 100 110 110 ns
Accelerated Programming
Word Typ 54 µs
Operation (Note 2)
Notes:
1. Not 100% tested.
2. See AC Characteristics‚ on page 77 for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns, 100ns, and 110 ns speed options are tested with VIO = VCC
= 3 V. AC specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
6. 90 ns speed option only applicable to S29GL128N and S29GL256N.
AC Characteristics
555 for program PA for program
2AA for erase SA for sector erase
555 for chip erase
Data# Polling
Addresses PA
tWC tAS
tAH
tWH
WE#
tGHEL
OE#
tCP tWHWH1 or 2
CE#
tWS tCPH
tBUSY
tDS
tDH
DQ7# DOUT
Data
tRH A0 for program PD for program
55 for erase 30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data
written to the device.
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 10,000 cycles, checkerboard
pattern.
2. Under worst case conditions of 90°C, VCC = 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 16-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
words program faster than the maximum program times listed.
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 12 on page 63 and Table 14 on page 65 for further information on command definitions.
TSOP 6 7.5 pF
CIN Input Capacitance VIN = 0
BGA 4.2 5.0 pF
TSOP 8.5 12 pF
COUT Output Capacitance VOUT = 0
BGA 5.4 6.5 pF
TSOP 7.5 9 pF
CIN2 Control Pin Capacitance VIN = 0
BGA 3.9 4.7 pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Physical Dimensions
TS056—56-Pin Standard Thin Small Outline Package (TSOP)
NOTES:
PACKAGE TS 56
JEDEC MO-142 (B) EC 1 CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
SYMBOL MIN. NOM. MAX. (DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982.)
A --- --- 1.20 2 PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
A1 0.05 --- 0.15 3 TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS
A2 0.95 1.00 1.05 DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE
LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
b1 0.17 0.20 0.23
4 DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE
b 0.17 0.22 0.27 MOLD PROTUSION IS 0.15 mm PER SIDE.
c1 0.10 --- 0.16
5 DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE
c 0.10 --- 0.21 DAMBAR PROTUSION SHALL BE 0.08 mm TOTAL IN EXCESS OF b
D 19.80 20.00 20.20 DIMENSION AT MAX MATERIAL CONDITION. MINIMUM SPACE BETWEEN
PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 mm.
D1 18.30 18.40 18.50
6 THESE DIMESIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
E 13.90 14.00 14.10 0.10 mm AND 0.25 mm FROM THE LEAD TIP.
e 0.50 BASIC
7 LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
L 0.50 0.60 0.70 SEATING PLANE.
O 0˚ - 8˚ 8 DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
R 0.08 --- 0.20
N 56
3160\38.10A
Physical Dimensions
LAA064—64-Ball Fortified Ball Grid Array (FBGA)
DIRECTION
Note: CE#, OE# and WE# must be at logic high during Reset Time.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP tRH
Reset Low Time from Rising Edge of VCC (or last Reset pulse) to Rising Edge
tVCS Min 35 µs
of RESET#
Reset Low Time from Rising Edge of VIO (or last Reset pulse) to Rising Edge
tVIOS Min 35 µs
of RESET#
Notes:
1. VIO < VCC + 200 mV.
2. VIO and VCC ramp must be in sync during power up. If RESET# is not stable for 35 µs, the following conditions may occur: the device does
not permit any read and write operations, valid read operations return FFh, and a hardware reset is required.
3. Maximum VCC power up current is 20 mA (RESET# =VIL).
Vcc_min
VCC
Vio_min
VIO
t RH
CE#
t VIOS
t VCS
RESET#
Revision Summary
Revision A (September 2, 2003)
Initial Release.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and
artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-men-
tioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures
by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other
abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those products.