VS-FB190SA10

Vishay Semiconductors

Power MOSFET, 190 A

FEATURES
• Fully isolated package
• Very low on-resistance
• Fully avalanche rated
• Dynamic dV/dt rating
• Low drain to case capacitance
• Low internal inductance
SOT-227
• Optimized for SMPS applications
• Easy to use and parallel
• Industry standard outline
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
DESCRIPTION
VDSS 100 V
High current density power MOSFETs are paralleled into a
ID DC 190 A
compact, high power module providing the best
RDS(on) 0.0065  combination of switching, ruggedized design, very low
Type Modules - MOSFET on-resistance and cost effectiveness.
Package SOT-227 The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately higher than 500 W. The low thermal
resistance and easy connection to the SOT-227 package
contribute to its universal acceptance throughout the
industry.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
TC = 40 °C 190
Continuous drain current at VGS 10 V ID
TC = 100 °C 130 A
Pulsed drain current IDM 720
Power dissipation PD TC = 25 °C 568 W
Linear derating factor 2.7 W/°C
Gate to source voltage VGS ± 20 V
Single pulse avalanche energy EAS (2) 700 mJ
Avalanche current IAR (1) 180 A
Repetitive avalanche energy EAR (1) 48 mJ
Peak diode recovery dV/dt dV/dt (3) 5.7 V/ns
Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C
Insulation withstand voltage (AC-RMS) VISO 2.5 kV
Mounting torque M4 screw 1.3 Nm
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature.
(2) Starting T = 25 °C, L = 43 μH, R = 25 , I
J g AS = 180 A.
SD  180 A, dI/dt  83 A/μs, VDD  V(BR)DSS, TJ  150 °C.
(3) I

Document Number: 93459 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 12-Apr-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-FB190SA10
Vishay Semiconductors Power MOSFET, 190 A

THERMAL RESISTANCE
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Junction to case RthJC - - 0.22
°C/W
Case to heatsink, flat, greased surface RthCS - 0.05 -

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V(BR)DSS VGS = 0 V, ID = 250 μA 100 - - V
Breakdown voltage temperature
V(BR)DSS/TJ Reference to 25 °C, ID = 1 mA - 0.093 - V/°C
coefficient
Static drain to source on-resistance RDS(on) VGS = 10 V, ID = 180 A - 0.0054 0.0065 
Gate threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 3.3 4.35 V
Forward transconductance gfs VDS = 25 V, ID = 180 A 93 - - S
VDS = 100 V, VGS = 0 V - - 50
Drain to source leakage current IDSS μA
VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 500
VGS = 20 V - - 200
Gate to source forward leakage IGSS nA
VGS = - 20 V - - - 200
Total gate charge Qg ID = 180 A - 250 -
Gate to source charge Qgs VDS = 80 V - 40 - nC
Gate to drain ("Miller") charge Qgd VGS = 10 V - 110 -
Turn-on delay time td(on) - 45 -
VDD = 50 V
Rise time tr ID = 180 A - 351 -
ns
Turn-off delay time td(off) Rg = 2.0(internal) - 181 -
RD = 0.27
Fall time tf - 335 -
Internal source inductance LS Between lead, and center of die contact - 5.0 - nH
Input capacitance Ciss VGS = 0 V - 10 700 -
Output capacitance Coss VDS = 25 V - 2800 - pF
Reverse transfer capacitance Crss f = 1.0 MHz - 1300 -

SOURCE-DRAIN RATINGS AND CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current D
IS MOSFET symbol - - 190
(body diode)
showing the integral A
G
Pulsed source current (body diode) ISM reverse p-n junction diode. - - 740
S

Diode forward voltage VSD TJ = 25 °C, IS = 180 A, VGS = 0 V - 1.0 1.3 V

Reverse recovery time trr TJ = 25 °C, IF = 180 A, dI/dt = 100 A/μs - 300 - ns
Reverse recovery charge Qrr - 2.6 - μC
Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)

www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 93459

2 Revision: 12-Apr-11
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 VS-FB190SA10
Power MOSFET, 190 A Vishay Semiconductors

1000 2.5
VGS ID = 180A

R DS(on) , Drain-to-Source On Resistance

TOP 15V
10V
8.0V
I D , Drain-to-Source Current (A)

7.0V
6.0V 2.0
5.5V
5.0V
BOTTOM 4.5V
100

(Normalized)
1.5

4.5V 1.0

10

0.5

20µs PULSE WIDTH VGS = 10V

TJ = 25 °C 0.0
1 -60 -40 -20 0 20 40 60 80 100 120 140 160
0.1 1 10 100
TJ , Junction Temperature( ° C)
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature

1000 20000
VGS VGS = 0V, f = 1MHz
TOP 15V Ciss = Cgs + Cgd , Cds SHORTED
10V
8.0V Crss = Cgd
I D , Drain-to-Source Current (A)

7.0V Coss = Cds + Cgd

6.0V
5.5V 15000
5.0V
BOTTOM 4.5V C, Capacitance (pF)
100 Ciss

4.5V
10000

Coss
10
5000
Crss

20μs PULSE WIDTH

TJ = 150 °C 0
1
0.1 1 10 100 1 10 100

VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage

1000 20
ID = 180 A

VDS = 80V
I D , Drain-to-Source Current (A)

VGS , Gate-to-Source Voltage (V)

TJ = 150 ° C
VDS = 50V
15
VDS = 20V

100

TJ = 25 ° C 10

10
5

V DS = 25V FOR TEST CIRCUIT

20µs PULSE WIDTH SEE FIGURE 13
1 0
4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400
VGS , Gate-to-Source Voltage (V) Q G , Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage

Document Number: 93459 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 12-Apr-11 3
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-FB190SA10
Vishay Semiconductors Power MOSFET, 190 A

1000 175

Allowable Case Temperature (°C)

ISD , Reverse Drain Current (A)

150
TJ = 150 ° C
100
125

DC
10 100

TJ = 25 ° C 75

1
50

V GS = 0 V
0.1 25
0.2 0.6 1.0 1.4 1.8 0 25 50 75 100 125 150 175 200
VSD ,Source-to-Drain Voltage (V) I D , Drain Current in DC (A)
Fig. 7 - Typical Source Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs.
Case Temperature

10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)

1000
RD
VDS
I D , Drain Current (A)

10us
VGS
D.U.T.
100 100us RG
+
- VDD
1ms
10 V
10 10ms
Pulse width ≤ 1 µs
TC = 25 ° C Duty factor ≤ 0.1 %
TJ = 150 ° C
Single Pulse
1
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area Fig. 10a - Switching Time Test Circuit

VDS
90%

10%
VGS
td(on) tr t d(off) tf

Fig. 10b - Switching Time Waveforms

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4 Revision: 12-Apr-11
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 VS-FB190SA10
Power MOSFET, 190 A Vishay Semiconductors

ZthJC - Thermal Impedance (°C/W)

0.75

0.5
0.1
0.3
0.2
Single pulse
0.1 (thermal resistance)

DC

0.01
0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case

1500
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 71A
100A
1200 BOTTOM 160A

15 V

900

L Driver
VDS
600

RG D.U.T +
- VDD 300
IAS A
20 V
tp 0.01 Ω
0
25 50 75 100 125 150
Starting TJ , Junction Temperature( ° C)
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current

V (B R )D S S
tp QG

10 V
QGS QGD

VG

IAS
Charge

Fig. 12b - Unclamped Inductive Waveforms Fig. 13a - Basic Gate Charge Waveform

Document Number: 93459 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 12-Apr-11 5
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VS-FB190SA10
Vishay Semiconductors Power MOSFET, 190 A

Current regulator
Same type as D.U.T.

50 kΩ
12 V 0.2 µF
0.3 µF

+
D.U.T. V
- DS

VGS

3 mA

IG ID
Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
3 • Ground plane
• Low leakage inductance
current transformer
-

+
2
4
- +
-

RG • dV/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - Device under test

Fig. 13c - Peak Diode Recovery dV/dt Test Circuit

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig. 14 - For N-Channel Power MOSFETs

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6 Revision: 12-Apr-11
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 VS-FB190SA10
Power MOSFET, 190 A Vishay Semiconductors

ORDERING INFORMATION TABLE

Device code VS- F B 190 S A 10

1 2 3 4 5 6 7

1 - Vishay Semiconductors product

2 - Power MOSFET
3 - Generation 5 MOSFET
4 - Current rating (190 = 190 A)
5 - Single switch
6 - Package indicator (SOT-227)
7 - Voltage rating (10 = 100 V)

CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT CIRCUIT DRAWING
CONFIGURATION CODE

D (3)

3 2
(D) (G)

G (2)

S (1-4)

Lead Assignment
Single switch S (S) (D)

4 3

4 1
1 2 (S) (S)

(S) (G)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425

Document Number: 93459 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 12-Apr-11 7
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Outline Dimensions
Vishay Semiconductors

SOT-227 Generation II

DIMENSIONS in millimeters (inches)

38.30 (1.508)
37.80 (1.488)
Ø 4.10 (0.161) 4 x M4 nuts
-A-
Ø 4.30 (0.169)

6.25 (0.246) 25.70 (1.012)

12.50 (0.492) 6.50 (0.256) 24.70 (0.972)
13.00 (0.512) -B-

7.45 (0.293) R full 2.10 (0.083)

7.60 (0.299) 2.20 (0.087)
14.90 (0.587)
15.20 (0.598)
30.50 (1.200)
29.80 (1.173)

31.50 (1.240)
32.10 (1.264)

8.30 (0.327) 0.25 (0.010) M C A M B M

4x
7.70 (0.303)

2.20 (0.087) 4.10 (0.161)

1.90 (0.075) 4.50 (0.177) 12.30 (0.484)
11.70 (0.460)
-C-
0.13 (0.005)

25.00 (0.984)
25.50 (1.004)

Note
• Controlling dimension: millimeter

Document Number: 95423 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 15-Nov-10 1
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Revision: 11-Mar-11 1