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    Silicon Unilateral Switch: V-I Characteristic of SUS

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    Grondon Huagon
    The document discusses two types of unilateral breakover devices: the silicon unilateral switch (SUS) and the four-layer diode. The SUS has a gate terminal that allows its breakover voltage to be reduced to the sum of a connected Zener diode's voltage and 0.6V. SUS devices typically have a breakover voltage of 8V and current limit of less than 1A. The four-layer diode similarly breaks over in only one direction, with breakdown possible in reverse but at a much higher voltage and in a destructive manner.

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    Silicon Unilateral Switch: V-I Characteristic of SUS

    Uploaded by

    Grondon Huagon
    360 views2 pages
    The document discusses two types of unilateral breakover devices: the silicon unilateral switch (SUS) and the four-layer diode. The SUS has a gate terminal that allows its breakover voltage to be reduced to the sum of a connected Zener diode's voltage and 0.6V. SUS devices typically have a breakover voltage of 8V and current limit of less than 1A. The four-layer diode similarly breaks over in only one direction, with breakdown possible in reverse but at a much higher voltage and in a destructive manner.

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    Silicon Unilateral Switch

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    The document discusses two types of unilateral breakover devices: the silicon unilateral switch (SUS) and the four-layer diode. The SUS has a gate terminal that allows its breakover voltage to be reduced to the sum of a connected Zener diode's voltage and 0.6V. SUS devices typically have a breakover voltage of 8V and current limit of less than 1A. The four-layer diode similarly breaks over in only one direction, with breakdown possible in reverse but at a much higher voltage and in a destructive manner.

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    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    360 views2 pages

    Silicon Unilateral Switch: V-I Characteristic of SUS

    Uploaded by

    Grondon Huagon
    The document discusses two types of unilateral breakover devices: the silicon unilateral switch (SUS) and the four-layer diode. The SUS has a gate terminal that allows its breakover voltage to be reduced to the sum of a connected Zener diode's voltage and 0.6V. SUS devices typically have a breakover voltage of 8V and current limit of less than 1A. The four-layer diode similarly breaks over in only one direction, with breakdown possible in reverse but at a much higher voltage and in a destructive manner.

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    Silicon Unilateral Switch

    jojo September 16, 2009 1 Comment

    The diac and the silicon bilateral switch are grouped as bilateral or bidirectional
    devices because they can breakover in either direction. There are also breakover
    devices which breakover in only one direction; they fall in the category of unilateral or
    unidirectional breakover devices. Although unilateral breakover devices are more
    frequently employed in SCR triggering, they can also be employed in triac triggering
    circuit if they have some extra supporting circuitry. Silicon unilateral switch (SUS) is one
    of the important unilateral breakover devices.

    Silicon Unilateral Switch

    V-I characteristic of SUS


    The schematic symbol and V-I characteristic of SUS are shown is figure a and b
    respectively. The SUS, like the SBS, has gate terminal which can change the basic
    breakover characteristic shown in figure. By connecting a Zener diode between the gate
    and the cathode of an SUS, the breakover voltage can be reduced to (V Z + 0.6 V).This
    is accomplished by connecting Zener diode cathode to the SUS gate and Zener diode
    anode to the SUS cathode. SUS can be fired at a very low anode to cathode’ voltage
    (approximately 1 V) if gate current flows from anode to gate. SUSs are low-voltage, low-
    current devices. Most SUSs have a breakover voltage of 8 V and a current limit of less
    than 1 A.
    SUS Characteristics

    Four-layer diode
    Four-layer diode is another unilateral breakover device. Its schematic symbol is
    shown in figure. The V-I characteristic for four-layer diode-.and SUS are the same and
    are illustrated in figure. The V-I characteristic of four-layer diodes and SUSs is
    similar to that of an SBS except that only forward breakover voltage is possible.
    Reverse break-down can happen, but only at a much greater voltage level than + V B0.
    Reverse breakdown is destructive for the device. The breakover behaviour of a four
    layer diode cannot be changed. Four layer diodes are available with breakover voltages
    ranging from 10 to 400 V. They can carry large pulsed currents if the pulses are of short
    duration. Some four-layer diodes can carry 100 A current pulses.

    Four Layer Diode

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