Scribd Logo
Upload

Welcome to Scribd!

  • 312 views

    RBV5006

    Uploaded by

    Adah Bumbone
    This document provides specifications for silicon bridge rectifiers in the RBV5000-RBV5010 series. The rectifiers have a peak reverse voltage rating from 50-1000V, forward current rating of 50A, and features like high surge current capability, low forward voltage drop, and good heat dissipation. Dimensions, maximum ratings, electrical characteristics, and performance curves are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    RBV5006

    Uploaded by

    Adah Bumbone
    312 views3 pages
    This document provides specifications for silicon bridge rectifiers in the RBV5000-RBV5010 series. The rectifiers have a peak reverse voltage rating from 50-1000V, forward current rating of 50A, and features like high surge current capability, low forward voltage drop, and good heat dissipation. Dimensions, maximum ratings, electrical characteristics, and performance curves are provided.

    Original Description:

    Diode bridge

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for silicon bridge rectifiers in the RBV5000-RBV5010 series. The rectifiers have a peak reverse voltage rating from 50-1000V, forward current rating of 50A, and features like high surge current capability, low forward voltage drop, and good heat dissipation. Dimensions, maximum ratings, electrical characteristics, and performance curves are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    312 views3 pages

    RBV5006

    Uploaded by

    Adah Bumbone
    This document provides specifications for silicon bridge rectifiers in the RBV5000-RBV5010 series. The rectifiers have a peak reverse voltage rating from 50-1000V, forward current rating of 50A, and features like high surge current capability, low forward voltage drop, and good heat dissipation. Dimensions, maximum ratings, electrical characteristics, and performance curves are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 3

    RBV5000 - RBV5010 SILICON BRIDGE RECTIFIERS

    RBV25
    PRV : 50 - 1000 Volts
    3.9 ± 0.2
    Io : 50 Amperes C3 30 ± 0.3
    4.9 ± 0.2

    ∅ 3.2 ± 0.1
    FEATURES :

    20 ± 0.3
    * High current capability
    * High surge current capability

    11 ± 0.2
    * High reliability
    * Low reverse current + ~ ~
    * Low forward voltage drop

    17.5 ± 0.5
    13.5 ± 0.3
    * High case dielectric strength of 2000 VDC
    * Ideal for printed circuit board
    1.0 ± 0.1
    * Very good heat dissipation

    MECHANICAL DATA :
    * Case : Reliable low cost construction 7.5 7.5 2.0 ± 0.2
    10
    utilizing molded plastic technique ±0.2 ±0.2 ±0.2 0.7 ± 0.1

    * Epoxy : UL94V-O rate flame retardant


    * Terminals : Plated lead solderable per Dimensions in millimeters
    MIL-STD-202, Method 208 guaranteed
    * Polarity : Polarity symbols marked on case
    * Mounting position : Any
    * Weight : 7.7 grams

    MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS


    Rating at 25 °C ambient temperature unless otherwise specified.
    Single phase, half wave, 60 Hz, resistive or inductive load.
    For capacitive load, derate current by 20%.
    RBV RBV RBV RBV RBV RBV RBV
    RATING SYMBOL UNIT
    5000 5001 5002 5004 5006 5008 5010
    Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
    Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
    Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
    Maximum Average Forward Current Tc = 55°C IF(AV) 50 Amps.
    Peak Forward Surge Current Single half sine wave
    Superimposed on rated load (JEDEC Method) IFSM 400 Amps.
    2
    Current Squared Time at t < 8.3 ms. It 660 A2S
    Maximum Forward Voltage per Diode at IF = 25 Amps. VF 1.1 Volts
    Maximum DC Reverse Current Ta = 25 °C IR 10 µA
    at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA
    Typical Thermal Resistance (Note 1) R θJC 1.5 °C/W
    Operating Junction Temperature Range TJ 10 °C
    Storage Temperature Range TSTG - 40 to + 150 °C

    Notes :
    1. Thermal Resistance from junction to case w ith units mounted on heatsink. UPDATE : AUGUST 3, 1998
    RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 )

    FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK


    RECTIFIED CURRENT FORWARD SURGE CURRENT
    AVERAGE FORWARD OUTPUT CURRENT

    PEAK FORWARD SURGE CURRENT,


    60 600

    50 500

    40 400 TJ = 50 °C

    AMPERES
    AMPERES

    30 300

    20 200

    8.3 ms SINGLE HALF SINE WAVE


    10 100
    JEDEC METHOD
    P.C. Board Mounted with
    SINE WAVE R-Load
    0 0
    0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100

    CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz

    FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS


    PER DIODE PER DIODE
    100 10

    TJ = 100 °C
    FORWARD CURRENT, AMPERES

    REVERSE CURRENT,
    MICROAMPERES

    10 1.0

    Pulse Width = 300 µs


    1 % Duty Cycle

    1.0 0.1 TJ = 25 °C

    TJ = 25 °C
    0.1 0.01
    0 20 40 60 80 100 120 140
    PERCENT OF RATED REVERSE
    VOLTAGE, (%)
    0.01
    0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
    FORWARD VOLTAGE, VOLTS
    This datasheet has been download from:

    www.datasheetcatalog.com

    Datasheets for electronics components.

    You might also like