RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS

RBV25
PRV : 50 - 1000 Volts
3.9 ± 0.2
Io : 10 Amperes C3 30 ± 0.3 4.9 ± 0.2

FEATURES : ∅ 3.2 ± 0.1

* High current capability

20 ± 0.3
* High surge current capability

11 ± 0.2
* High reliability
* Low reverse current + ~ ~
* Low forward voltage drop
* High case dielectric strength of 2000 V DC

17.5 ± 0.5
13.5 ± 0.3
* Ideal for printed circuit board
* Very good heat dissipation 1.0 ± 0.1

MECHANICAL DATA :
* Case : Reliable low cost construction 10 7.5 7.5 2.0 ± 0.2
utilizing molded plastic technique ±0.2 ±0.2 ±0.2
0.7 ± 0.1
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
Dimensions in millimeters
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

RBV RBV RBV RBV RBV RBV RBV

RATING SYMBOL
1000 1001 1002 1004 1006 1008 1010
UNIT

Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55 °C I F(AV) 10 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 300 Amps.
2 2
Current Squared Time at t < 8.3 ms. It 160 A S
Maximum Forward Voltage per Diode at I F = 5.0 Amps. VF 1.0 Volts
Maximum DC Reverse Current Ta = 25 °C IR 10 µA
at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA
Typical Thermal Resistance (Note 1) RθJC 2.5 °C/W
Operating Junction Temperature Range TJ - 40 to + 150 °C
Storage Temperature Range T STG - 40 to + 150 °C

Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : NOVEMBER 1,1998
 RATING AND CHARACTERISTIC CURVES ( RBV1000 - RBV1010 )

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK

RECTIFIED CURRENT FORWARD SURGE CURRENT
12 300
AVERAGE FORWARD OUTPUT CURRENT

PEAK FORWARD SURGE CURRENT,

10 250

8 200 TJ = 50 °C

AMPERES
AMPERES

6 150

4 100
HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK. 8.3 ms SINGLE HALF SINE WAVE
2 (8.2cm x 8.2cm x 0.3cm) 50
JEDEC METHOD
Al.-FINNED PLATE

0 0
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100

CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS

PER DIODE PER DIODE
100 10

TJ = 100 °C
FORWARD CURRENT, AMPERES

REVERSE CURRENT,
MICROAMPERES

10 1.0

Pulse Width = 300 µs

1 % Duty Cycle
1.0 0.1 TJ = 25 °C

TJ = 25 °C
0.1 0.01
0 20 40 60 80 100 120 140

PERCENT OF RATED REVERSE

VOLTAGE, (%)
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS