41.

For emitter bias, the voltage across the emitter resistor is the same as the voltage between the emitter
and the

a. Base

b. Collector

c. Emitter

d. Ground

42. For emitter bias, the voltage at the emitter is 0.7 V less than the

a. Base voltage

b. Emitter voltage

c. Collector voltage

d. Ground voltage

43. With voltage-divider bias, the base voltage is

a. Less than the base supply voltage

b. Equal to the base supply voltage

c. Greater than the base supply voltage

d. Greater than the collector supply voltage

44. VDB is noted for its

a. Unstable collector voltage

b. Varying emitter current

c. Large base current

d. Stable Q point

45. With VDB, an increase in emitter resistance will

a. Decrease the emitter voltage

b. Decrease the collector voltage

d. Decrease the emitter current

46. VDB has a stable Q point like

a. Base bias

b. Emitter bias

c. Collector-feedback bias

d. Emitter-feedback bias

47. VDB needs

a. Only three resistors

b. Only one supply

c. Precision resistors

d. More resistors to work better

48. VDB normally operates in the

a. Active region

b. Cutoff region

c. Saturation region

d. Breakdown region

49. The collector voltage of a VDB circuit is not sensitive to changes in the

a. Supply voltage

b. Emitter resistance

c. Current gain

d. Collector resistance

50. If the emitter resistance increases in a VDB circuit, the collector voltage

a. Decreases
b. Stays the same

c. Increases

d. Doubles

51. Base bias is associated with

a. Amplifiers

b. Switching circuits

c. Stable Q point

d. Fixed emitter current

52. If the emitter resistance doubles in a VDB circuit, the collector current will

a. Double

b. Drop in half

c. Remain the same

d. Increase

53. If the collector resistance increases in a VDB circuit, the collector voltage will

a. Decrease

b. Stay the same

c. Increase

d. Double

54. The Q point of a VDB circuit is

a. Hypersensitive to changes in current gain

b. Somewhat sensitive to changes in current gain

c. Almost totally insensitive to changes in current gain

d. Greatly affected by temperature changes

55. The base voltage of two supply emitter bias (TSEB) is

b. Very large

c. Near 0 V

d. 1.3 V

56. If the emitter resistance doubles with TSEB, the collector current will

a. Drop in half

b. Stay the same

c. Double

d. Increase

57. If a splash of solder shorts the collector resistor of TSEB, the collector voltage will

a. Drop to zero

b. Equal the collector supply voltage

C. Stay the same

d. Double

58. If the emitter resistance increases with TSEB, the collector voltage will

a. Decrease

b. Stay the same

C. Increase

d. Equal the collector supply voltage

59. If the emitter resistor opens with TSEB, the collector voltage will

a. Decrease

b. Stay the same

c. Increase slightly

d. Equal the collector supply voltage

60. In TSEB, the base current must be very

b. Large

c. Unstable

d. Stable

61. The Q point of TSEB does not depend on the

a. Emitter resistance

b. Collector resistance

c. Current gain

d. Emitter voltage

62. The majority carriers in the emitter of a PNP transistor are

a. Holes

b. Free electrons

c. Trivalent atoms

d. Pentavalent atoms

63. The current gain of a PNP transistor is

a. The negative of the NPN current gain

b. The collector current divided by the emitter current

c. Near zero

d. The ratio of collector current to base current

64. Which is the largest current in a PNP transistor?

a. Base current

b. Emitter current

c. Collector current

d. None of these
65. The currents of a PNP transistor are

a. Usually smaller than NPN currents

b. Opposite NPN currents

c. Usually larger than NPN currents

d. Negative

66. With PNP voltage-divider bias, you must use

a. Negative power supplies

b. Positive power supplies

c. Resistors

d. Grounds

67. Voltage-divider bias has a relatively stable Q-point, as does

 A) base bias.
 B) collector-feedback bias.
 C) both of the above
 D) none of the above
68. Emitter bias requires

 A) only a positive supply voltage.

 A) the input signal being too large.

 A) IC.
 B) VCE.
 C) the Q-point.
 D) all of the above
71. The input resistance at the base of a voltage-divider biased transistor can be neglected
 A) at all times.
 B) only if the base current is much smaller than the current through R2 (the lower bias resistor).
  C) at no time.
 D) only if the base current is much larger than the current through R2 (the lower bias resistor).
72. What is the Q-point for a fixed-bias transistor with IB = 75 µA, βDC = 100, VCC = 20 V, and RC =
1.5 kΩ?
 A) VC = 0 V
 B) VC = 20 V
 C) VC = 8.75 V
 D) VC = 11.25 V
73. Ideally, for linear operation, a transistor should be biased so that the Q-point is
 A) near saturation.
 B) near cutoff.
 C) where IC is maximum.
 D) halfway between cutoff and saturation.
74. Refer to Figure 5-1. The value of IB is

Figure 5-1
 A) 53 µA.
 B) 50 µA.
 C) 50 mA.
 D) 53 mA.
75. Refer to Figure 5-1. The value of IC is
 A) 10 µA.
 B) 10 mA.
 C) 5 mA.
 D) 50 mA.
76. Refer to Figure 5-1. The value of βDC is
 A) 5.3.
 B) 53.
 C) 94.
 D) 100.
77. Refer to Figure 5-2. Determine IC.

Figure 5-2
 A) 5 µA
 B) 5 mA
 C) 0 mA
 D) 10 mA
78. Refer to Figure 5-2. Assume that IC ≈ IE. Find VE.
 A) 5 V
 B) 10 V
 C) 15 V
 D) 2.5 V
79. Refer to Figure 5-2. Assume IC ≈ IE. Determine the value of RC that will allow VCE to equal 10 V.
 A) 1 kΩ
 B) 1.5 kΩ
 C) 2 kΩ
 D) 2.5 kΩ
80. Refer to Figure 5-2. Calculate the current I2.
 A) 32 mA
 B) 3.2 mA
 C) 168 µA
 D) 320 µA
81. Refer to Figure 5-3(a). The most probable cause of trouble, if any, from these voltage measurements
would be
Figure 5-3
 A) the base-emitter junction is open.
 B) RE is open.
 C) a short from collector to emitter.
 D) no problems.
82. Refer to Figure 5-3(b). The most probable cause of trouble, if any, from these voltage measurements
is
 A) the base-emitter junction is open.
 B) RE is open.
 C) a short from collector to emitter.
 D) no problems.
83. Refer to Figure 5-3(c). The most probable cause of trouble, if any, from these voltage measurements
is
  A) the base-emitter junction is open.
 B) RE is open.
 C) a short from collector to emitter.
 D) no problems.
84. Refer to Figure 5-3(d). The most probable cause of trouble, if any, from these voltage measurements
is
 A) the base-emitter junction is open.
 B) RE is open.
 C) a short from collector to emitter.
 D) no problems.
85. The most stable biasing technique used is the

 A) voltage-divider bias.
 B) base bias.
 C) emitter bias.
 D) collector bias.
86. At saturation the value of VCE is nearly _____, and IC = _____.

 A) zero, zero
 B) VCC, IC(sat)
 C) zero, I(sat)
 D) VCC, zero
87. The linear (active) operating region of a transistor lies along the load line below _____ and above
_____.
 A) cutoff, saturation
 B) saturation, cutoff
88. What is the most common bias circuit?

 A) base
 B) collector
 C) emitter
 D) voltage-divider
89. What is the dc input resistance at the base of a BJT?

 A) βDCRC
 B) βdc • (RC || RE)
 C) βDC • re′
 D) βDCRE
90. Which transistor bias circuit provides good Q-point stability with a single-polarity supply voltage?
 A) base bias
 B) collector-feedback bias
 C) voltage-divider bias
 D) emitter bias
91. Which transistor bias circuit arrangement has poor stability because its Q-point varies widely with
βDC?
 A) base bias
 B) collector-feedback bias
 C) voltage-divider bias
 D) emitter bias
92. Which transistor bias circuit arrangement provides good Q-point stability, but requires both positive
and negative supply voltages?
 A) base bias
 B) collector-feedback bias
 C) voltage-divider bias
 D) emitter bias
93. Which transistor bias circuit arrangement provides good stability using negative feedback from
collector to base?
 A) base bias
 B) collector-feedback bias
 C) voltage-divider bias
 D) emitter bias
94.

FIGURE 5-4
Refer to Figure 5-4. In the voltage-divider biased npn transistor circuit, if RC opens, the transistor is
 A) saturated.
 B) cutoff.
 C) nonconducting.
95. Refer to Figure 5-4. In the voltage-divider biased npn transistor circuit, if R2 opens, the transistor is
 A) saturated.
 B) cutoff.
 C) nonconducting.
96. Refer to Figure 5-4. In the voltage-divider biased npn transistor circuit, if R1 opens, the transistor is
 A) saturated.
 B) cutoff.
 C) nonconducting.