Edc Viva Questions: A) Exactly in The Middle

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EDC VIVA QUESTIONS

1. In a pure semiconductor, the Fermi level lies _____________ of theforbidden energy gap.
a) exactly in the middle b) at the lower part c) at the upper part d) none of the above

2. In a p-n junction, the potential built across the junction, after diffusion hasstopped, is termed as
_______________.
a) barrier potential b) developed potential c) p-n potential d) none of the above

3. If an external voltage is applied across the p-n junction such that itneutralizes the barrier potential
and causes conduction through the junction, the p-n junction is said to be ______________.
a) forward biased b) reverse biased c) un-biased d) no-biased

4.Reverse saturation current ______________ for every 100c rise in temperature.

5. The barrier potential is about ______________ of germanium.


a) 0.1V b) 0.3V c) 0.7V d) 1.5V

6.The barrier potential is about ______________ of silicon.


a) 0.1V b) 0.3V c) 0.7V d) 1.5V

7.If an external voltage is applied across the p-n junction such that itneutralizes the barrier potential
and causes conduction through the junction, the p-n junction is said to be ______________.
a) forward biased b) reverse biased c) un-biased d) no-biased

8.The efficiency of a full-wave rectifier is _____________.


a) 40.6%b) 81.2% c) 0.483% d) 1.21%

9.An inductor ___________ to pass through it.


a) allows DCb) blocks DCc) allows AC d) blocks AC

10.The function of a bleeder resistor in a power supply is


(A) the same as that of load resistor
(B) to ensure a minimum current drain in the circuit
(C) to increase the output dc voltage
(D) to increase the output current

11.In a full-wave rectifier without filter, the ripple factor is


(A) 0.482(B) 1.21(C) 1.79(D) 2.05

12.In a full wave rectifier peak inverse voltage is__________________________

13. In a full wave rectifier peak inverse voltage is__________________________

14.Expression for voltage regulation


15. The ratio of change in collector current to the change in emitter current atconstant collector to base voltage is
___________.
a)α b)β c)γ d)π

16. The ratio of change in collector current to the change in base current atconstant collector to
emitter voltage is ___________.
a)α b)β c)γ d)π
17. The intersection of DC load line and the output characteristics of a transistoris called ___________________.
a) Q–Point b) quiescent Pointc) operating Pointd) all of these

18.The biasing circuit which gives most stable operating point is _________.
a) base bias b) collector-to-base biasc) voltage-divider biasd) none of these

19.ICBO doubles for every _________ rise in temperature.


a) 40 b) 30c) 20d) 10

20.] ICBO__________ for every 10C rise in temperature.


a) doublesb) triplesc) quadruples d) none of these

21. The collector-to-base bias provides __________ stability than the base biascircuit.
a) more b) lessc) more or less d) none of these

22.In CB configuration, when reverse bias voltage VCBincreases above theVCB max, increase in depletion
region is such that it penetrates into base until itmakes contact with emitter-base depletion region. This condition
is called _______.
a) punch-through effect b) reach-through effectc) (a) or (b)d) none of these

23.In CB configuration, when reverse bias voltage VCBincreases, the width of the depletion region also
increases, which reduces the electrical base width. Thiseffect is called as _________________.
a) early effect b) base width modulationc) (a) or (b)d) none of these

24.γis the ratio of change in emitter current to the change in _________current.


a) emitterb) basec) collector d) none of these

25.The collector-to-base bias circuit is also known as _______________.


a) base bias b) voltage-divider biasc) voltage feedback bias circuitd) none of these

26.The stability factor ‘S’ is the rate change of _____________ current withrespect to reverse
saturation current.
a) emitter b) basec) collectord) none of these

27.In a JFET, drain currentis maximum when VGS is_____________

28.An FET has a _____________input resistance


29.The drain source voltage at which the drain current becomes nearly constant is called
_____________

30.Enhancement MOSFET operates at _____________gate voltage

31.Depletion MOSFET operates at _____________gate voltage

32. Which of the following parameters is used for distinguishing between a small signal and a
large-signal amplifier?
(A) Instabilit(B) Bandwidth (C) Overall gain(D) Distortion

33. The lowest output impedance is obtained in case of BJT amplifiers for
(A) CB configuration.(B) CE configuration. (C) CC configuration. (D) CE with RE configuration.

34. The common collector amplifier is also known as


(A) collector follower(B) Base follower(C) Emitter follower (D) Source follower

35. The important characteristic of emitter-follower is


(A) high input impedance and high output impedance
(B) high input impedance and low output impedance
(C) low input impedance and low output impedance
(D) low input impedance and high output impedance

36. N-channel FETs are superior to P-channel FETs, because


(A) They have a higher input impedance.
(B) They have high switching time.
(C) They consume less power.
(D) Mobility of electrons is greater than that of holes.

37. For a JFET, when VDS is increased beyond the pinch off voltage, the drain current
(A) Increases(B) decreases (C) remains constant. (D) First decreases and then increases

38. In a JFET, at pinch-off voltage applied on the gate


(A) the drain current becomes almost zero
(B) the drain current begins to decrease
(C) the drain current is almost at saturation value.
(D) the drain-to-source voltage is close to zero volts.

39. For a large values of |VDS|, a FET - behaves as


(A) Voltage controlled resistor.
(B) Current controlled current source.
(C) Voltage controlled current source.
(D) Current controlled resistor.
40.The diode which exhibits negative resistance region_____________

41.The most important application of a tunnel diode is a _____________

42.photo diode operates in which bias_____________

42.An increase in reverse bias voltage will _____________ transition capacitance

43.SCR stands for_____________

44.Application of SCR_____________

45.Common drain amplifier can be called as _____________

46. Transistor is a
(A) Current controlled current device.
(B) Current controlled voltage device.
(C) Voltage controlled current device.
(D) Voltage controlled voltage device.

47. FET is a
(A) Current controlled current device.
(B) Current controlled voltage device.
(C) Voltage controlled current device.
(D) Voltage controlled voltage device.

48. When the temperature of a doped semiconductor is increased, its conductivity


(A) decreases.
(B) increases.
(C) does not change.
(D) increases or decreases depending on whether it is p- or n-type.

49. The transconductance, gm, of a JFET is computed at constant VDS, by the


expression_____________

50.Relation between α, β , γ

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