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    122DL Datasheet

    Uploaded by

    gabriel rondon
    The document provides specifications for the 122DL NPN silicon transistor from Shenzhen Success Technology. It is designed for low voltage, large current applications such as 110-120V fluorescent lamps. Key features include planar construction, low saturation voltage, integrated diode, short switch time, and wide safe operating area. Absolute maximum ratings include 400V collector-base voltage, 200V collector-emitter voltage, and 150°C junction temperature. Typical electronics characteristics include 15-30 DC current gain, 0.8us fall time, and 5MHz current gain bandwidth. The transistor comes in a standard TO-126S package.

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    122DL Datasheet

    Uploaded by

    gabriel rondon
    223 views3 pages
    The document provides specifications for the 122DL NPN silicon transistor from Shenzhen Success Technology. It is designed for low voltage, large current applications such as 110-120V fluorescent lamps. Key features include planar construction, low saturation voltage, integrated diode, short switch time, and wide safe operating area. Absolute maximum ratings include 400V collector-base voltage, 200V collector-emitter voltage, and 150°C junction temperature. Typical electronics characteristics include 15-30 DC current gain, 0.8us fall time, and 5MHz current gain bandwidth. The transistor comes in a standard TO-126S package.

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    hoja de datos transistor 122DL

    Original Title

    122DL_Datasheet

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    The document provides specifications for the 122DL NPN silicon transistor from Shenzhen Success Technology. It is designed for low voltage, large current applications such as 110-120V fluorescent lamps. Key features include planar construction, low saturation voltage, integrated diode, short switch time, and wide safe operating area. Absolute maximum ratings include 400V collector-base voltage, 200V collector-emitter voltage, and 150°C junction temperature. Typical electronics characteristics include 15-30 DC current gain, 0.8us fall time, and 5MHz current gain bandwidth. The transistor comes in a standard TO-126S package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    223 views3 pages

    122DL Datasheet

    Uploaded by

    gabriel rondon
    The document provides specifications for the 122DL NPN silicon transistor from Shenzhen Success Technology. It is designed for low voltage, large current applications such as 110-120V fluorescent lamps. Key features include planar construction, low saturation voltage, integrated diode, short switch time, and wide safe operating area. Absolute maximum ratings include 400V collector-base voltage, 200V collector-emitter voltage, and 150°C junction temperature. Typical electronics characteristics include 15-30 DC current gain, 0.8us fall time, and 5MHz current gain bandwidth. The transistor comes in a standard TO-126S package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SUCCESS TECHNOLOGY

    www.shenzhensuccess.com
    NPN Silicon Transistor 122DL
    General Features Available Package TO-126S
    Planar construction with triple diffused process Application
    Low voltage with large current design 110V-120V Fluorescent lamp
    Low satutation voltage Electronic ballast
    Inter-integrated diode and sourced anti-satutation net
    Low switch power loss, High reliability
    Good current characteristic
    Short switch time
    Wide SOA.
    Accord with RoHS compliant

    Absolute Maximum Ratings Tc=25℃


    Item Symbol Value Unit
    Collector-Base Voltage VCBO 400 V
    Collector-Emitter Voltage VCEO 200 V
    Emitter-Base Voltage VEBO 9 V
    Collector Current IC 2 A
    Total Power Dissipation Ta=25℃ 2 W
    PC
    Tc=25℃ 50 W
    Junction Temperature Tj 150 ℃
    Storage Temperature Tstg -55~150 ℃

    Electronics Characteristics Tc=25℃


    Spec. Limit Unit
    Item Symbol Testing Condition
    Min Max 单位
    Collector-Base Breakdown Voltage BVCBO IC=1mA IE=0 400 V
    Collector-Emitter Breakdown Voltage BVCEO IC=10mA IB=0 200 V
    Emitter-Base Breakdown Voltage BVEBO IE=1mA IC=0 9 V
    Collector-Base Cutoff Current ICBO VCB=400V IE=0 20 µA
    Collector–Emitter Cutoff Current ICEO VCE=200V IB=0 20 µA
    Emitter-Base Cutoff Current IEBO VEB=9V IC=0 20 µA
    IC=0.5A IB=0.1A 0.5 V
    Collector-Emitter Saturation Voltage VCEsat
    IC=1.5A IB=0.5A 1.5 V
    Base-Emitter Saturation Voltage VBEsat IC=1.5A IB=0.5A 1.5 V
    DC Current Gain hFE VCE=5V IC=0.2A 15 30
    Fall Time tf 0.8 µs
    IC=0.25A（UI9600）
    Storage Time ts 1.5 3.0 µs
    VCE=10V IC=200mA
    Current Gain Bandwidth fT 5 MHz
    f=1MHZ

    Year/Month 11/11 Page:1/3


    SUCCESS TECHNOLOGY
    www.shenzhensuccess.com

    Typical Characteristics
    SOA (DC) PC-T

    hFE-IC VCE(sat) -IC

    VBE(sat) -IC

    Year/Month 11/11 Page:2/3


    SUCCESS TECHNOLOGY
    www.shenzhensuccess.com

    TO-126 PAKAGE OUTLINE DIMENSIONS

    Unit：mm

    Item Min. Max.

    A 2.280 2.680

    b1 1.170 1.370

    bp 0.660 0.860

    c 0.450 0.600

    D 10.700 11.100

    E 7.430 7.830

    e 2.280 REF

    e1 4.560REF

    L 14.900 15.900

    L1 1.750 1.950

    P 3.350 3.550

    P1 3.600 3.900

    Q 1.060 1.460

    Year/Month 11/11 Page:3/3

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