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    Success Technology: NPN Silicon Transistor

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    oscar
    This document provides information on the NPN Silicon Transistor D13005D from Success Technology. It lists the transistor's general features such as planar construction, low saturation voltage, and wide safe operating area. It also provides the transistor's maximum ratings, electronics characteristics, typical characteristics curves, and TO-220EW package outline dimensions. The transistor is suitable for applications such as fluorescent lamps, electronic ballasts, and electronic transformers.

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    © All Rights Reserved
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    Success Technology: NPN Silicon Transistor

    Uploaded by

    oscar
    46 views3 pages
    This document provides information on the NPN Silicon Transistor D13005D from Success Technology. It lists the transistor's general features such as planar construction, low saturation voltage, and wide safe operating area. It also provides the transistor's maximum ratings, electronics characteristics, typical characteristics curves, and TO-220EW package outline dimensions. The transistor is suitable for applications such as fluorescent lamps, electronic ballasts, and electronic transformers.

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    CY D13005D

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    This document provides information on the NPN Silicon Transistor D13005D from Success Technology. It lists the transistor's general features such as planar construction, low saturation voltage, and wide safe operating area. It also provides the transistor's maximum ratings, electronics characteristics, typical characteristics curves, and TO-220EW package outline dimensions. The transistor is suitable for applications such as fluorescent lamps, electronic ballasts, and electronic transformers.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    46 views3 pages

    Success Technology: NPN Silicon Transistor

    Uploaded by

    oscar
    This document provides information on the NPN Silicon Transistor D13005D from Success Technology. It lists the transistor's general features such as planar construction, low saturation voltage, and wide safe operating area. It also provides the transistor's maximum ratings, electronics characteristics, typical characteristics curves, and TO-220EW package outline dimensions. The transistor is suitable for applications such as fluorescent lamps, electronic ballasts, and electronic transformers.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SUCCESS TECHNOLOGY

    www.shenzhensuccess.com
    NPN Silicon Transistor D13005D

    General Features Available Package TO-220EW


    Planar construction with triple diffused process Application
    Low satutation voltage Fluorescent lamp
    Inter-integrated diode and sourced anti-satutation net Electronic ballast
    Low switch power loss, High reliability Electronic transformer
    High breakdown voltage
    Good current characteristic
    Short switch time
    Wide SOA.
    Accord with RoHS compliant

    Absolute Maximum Ratings Tc=25℃


    Item Symbol Value Unit
    Collector-Base Voltage VCBO 700 V
    Collector-Emitter Voltage VCEO 400 V
    Emitter-Base Voltage VEBO 9 V
    Collector Current IC 5 A
    Total Power Dissipation Ta=25℃ 3 W
    PC
    Tc=25℃ 75 W
    Junction Temperature Tj 150 ℃
    Storage Temperature Tstg -55~150 ℃

    Electronics Characteristics Tc=25℃


    Spec. Limit
    Item Symbol Testing Condition Unit
    Min Max
    Collector-Base Breakdown Voltage BVCBO IC=1mA IE=0 700 V
    Collector-Emitter Breakdown Voltage BVCEO IC=10mA IB=0 400 V
    Emitter-Base Breakdown Voltage BVEBO IE=1mA IC=0 9 V
    Collector-Base Cutoff Current ICBO VCB=680V IE=0 20 µA
    Collector–Emitter Cutoff Current ICEO VCE=390V IB=0 20 µA
    Emitter-Base Cutoff Current IEBO VEB=9V IC=0 20 µA
    IC=1A IB=0.2A 0.5 V
    Collector-Emitter Saturation Voltage VCEsat
    IC=4A IB=1 A 1.5 V
    Base-Emitter Saturation Voltage VBEsat IC=1A IB=0.2 A 1.5 V
    DC Current Gain hFE VCE=5V IC=1A 15 30
    Fall Time tf 0.8 µs
    IC=0.5A（UI9600）
    Storage Time ts 2.0 3.5 µs
    VCE=10V IC=500mA
    Current Gain Bandwidth fT 5 MHz
    f=1MHZ
    Year/Month 11/11 Page:1/3
    SUCCESS TECHNOLOGY
    www.shenzhensuccess.com

    Typical Characteristics
    SOA (DC) PC-T

    hFE-IC VCE(sat) -IC

    VBE(sat) -IC

    Year/Month 11/11 Page:2/3


    SUCCESS TECHNOLOGY
    www.shenzhensuccess.com

    TO-220 EW AKAGE OUTLINE DIMENSIONS

    S
    Y
    TO-220EW
    M
    Millimeters Inches
    B
    Min Max Min Max
    O
    L
    A 4.320 4.520 0.170 0.178
    A1 1.170 1.370 0.046 0.054
    A2 2.450 2.750 0.096 0.108
    b 0.710 0.910 0.028 0.036
    b1 0.710 0.890 0.028 0.035
    b2 1.170 1.370 0.046 0.054
    b3 1.170 1.350 0.046 0.053
    c 0.350 0.530 0.014 0.021
    c1 0.350 0.510 0.014 0.020
    D 14.940 15.340 0.588 0.604
    D1 8.500 8.900 0.335 0.350
    D2 12.200 12.600 0.480 0.496
    E 10.000 10.300 0.394 0.406
    E1 7.700 8.300 0.303 0.327
    e 2.540 REF 0.100 REF
    e1 5.080 REF 0.200 REF
    H1 6.220 6.420 0.245 0.253
    h 0 0.300 0 0.012
    L 13.150 13.950 0.518 0.549
    L1 — 3.800 — 0.150
    L2 — — — —
    Q 2.640 2.840 0.104 0.112
    ΦP 3.740 3.940 0.147 0.155

    Year/Month 11/11 Page:3/3

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