AP4506GEH

RoHS-compliant Product
Advanced Power N AND P-CHANNEL ENHANCEMENT

Electronics Corp. MODE POWER MOSFET

▼ Simple Drive Requirement D1/D2 N-CH BVDSS 30V

OM
▼ Good Thermal Performance RDS(ON) 24mΩ
▼ Fast Switching Performance ID 9A
S1
G1
S2
G2
P-CH BVDSS -30V
RDS(ON) 36mΩ

.C
TO-252-4L
Description ID -8A
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
D1 D2
ruggedized device design, low on-resistance and
cost-effectiveness.
IC G1 G2

S1 S2
T-
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
SE

VDS Drain-Source Voltage 30 -30 V

VGS Gate-Source Voltage +20 +20 V
3
ID@TA=25℃ Continuous Drain Current 9 -8 A
3
ID@TA=70℃ Continuous Drain Current 7.2 -6.4 A
1
IDM Pulsed Drain Current 50 -50 A
IP

PD@TA=25℃ Total Power Dissipation 3.1 W

TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
CH

Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 8 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 40 ℃/W

Data and specifications subject to change without notice 1

200902103
AP4506GEH
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A - - 24 mΩ

OM
VGS=4.5V, ID=4A - - 32 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=6A - 17 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA

.C
o
Drain-Source Leakage Current (T j=70 C) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA
2
Qg Total Gate Charge ID=6A - 8.3 13 nC
Qgs Gate-Source Charge IC VDS=24V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC
2
td(on) Turn-on Delay Time VDS=15V - 5 - ns
tr Rise Time ID=6A - 18 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 18 - ns
T-
tf Fall Time RD=2.5Ω - 4 - ns
Ciss Input Capacitance VGS=0V - 575 920 pF
Coss Output Capacitance VDS=25V - 100 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF
SE

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=6A, VGS=0V - - 1.3 V
IP

2
trr Reverse Recovery Time IS=6A, VGS=0V - 19 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC
CH

2
 AP4506GEH
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-5A - - 36 mΩ

OM
VGS=-4.5V, ID=-3A - - 48 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-5A - 12 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -10 uA

.C
o
Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA
2
Qg Total Gate Charge ID=-5A - 12.6 20 nC
Qgs Gate-Source Charge VDS=-24V - 2.4 - nC
Qgd
td(on)
tr
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
2
IC VGS=-4.5V
VDS=-15V
ID=-5A
-
-
-
6.2

16
8
-
-
-
nC
ns
ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 26 - ns
tf Fall Time RD=3Ω - 41 - ns
T-
Ciss Input Capacitance VGS=0V - 1045 1670 pF
Coss Output Capacitance VDS=-25V - 220 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 150 - pF
SE

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-5A, VGS=0V - - -1.3 V
2
trr Reverse Recovery Time IS=-5A, VGS=0V - 23 - ns
IP

Qrr Reverse Recovery Charge dI/dt=-100A/µs - 15 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
CH

2.Pulse test
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

3
AP4506GEH
N-Channel
50 50
o
T C = 150 C 10V
o
T C = 25 C 10V
7.0V
7.0V
5.0V
40
5.0V 40
4.5V
ID , Drain Current (A)

ID , Drain Current (A)

4.5V

30 30

OM
20 20 V G =3.0V
V G =3.0V

10 10

.C
0 0
0 1 2 3 4 5 0 2 4 6

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

28

26
I D =4A
T C =25 o C
IC Normalized RDS(ON)

1.8

1.6
I D =6A
V G =10V

1.4
RDS(ON) (mΩ)

T-
24

1.2

22

1.0

20
0.8
SE

18 0.6
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

IP

v.s. Junction Temperature

10 1.6

8
CH
Normalized VGS(th) (V)

1.2
T j =150 o C T j =25 o C
6
IS(A)

0.8

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

4
 AP4506GEH
N-Channel
f=1.0MHz
12 1000

C iss
VGS , Gate to Source Voltage (V)

I D =6A
V DS =24V
8

C (pF)

OM
100
C oss
C rss
4

.C
0 10
0 5 10 15 20 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100
IC Normalized Thermal Response (Rthja)

Duty factor=0.5

10 100us
0.2

1ms
T-
10ms
0.1
ID (A)

1 100ms 0.1

0.05
PDM
1s
t
T
0.1 0.02

Duty factor = t/T

T A =25 o C DC 0.01
Peak Tj = PDM x Rthja + T a
SE

Rthja=75℃/W
Single Pulse Single Pulse

0.01 0.01
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
IP

VDS VG
90%

QG
CH

4.5V

QGS QGD
10%
VGS

td(on) tr td(off) tf
Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

5
AP4506GEH
P-Channel
50 50
o
T C = 25 o C -10V T C = 150 C -10V
-7.0V -7.0V
40 -5.0V 40
-5.0V
-ID , Drain Current (A)

-ID , Drain Current (A)

-4.5V -4.5V

30 30

OM
20
20
V G = - 3.0V V G = - 3.0V

10 10

.C
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

45

41
I D =-3A
T C =25 o C
IC 1.6

1.4
I D =-5A
V G =-10V
RDS(ON) (mΩ)

Normalized RDS(ON)
T-
37 1.2

33 1.0

29 0.8
SE

25 0.6
2 4 6 8 10 -50 0 50 100 150

-V GS ,Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

IP

v.s. Junction Temperature

10 1.6

8
Normalized -VGS(th) (V)

T j =150 o C T j =25 o C
CH

1.2

6
-IS(A)

0.8

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

6
 AP4506GEH
P-Channel
12 10000
f=1.0MHz

10
-VGS , Gate to Source Voltage (V)

I D = -5A
V DS = -24V
8 1000 C iss

C (pF)

OM
6
C oss
C rss
4 100

.C
0 10
0 5 10 15 20 25 30 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100
IC Normalized Thermal Response (Rthjc)

Duty factor=0.5

10
100us
0.2

1ms
T-
10ms
-ID (A)

0.1

1
100ms 0.1

0.05

1s PDM
0.02
t
0.01 T
0.1

DC Single Pulse
Duty factor = t/T
T A =25 o C
SE

Peak Tj = PDM x Rthja + T a

Rthja=75℃/W
Single Pulse
0.01 0.01
0.1 1 10 100 0.001 0.01 0.1 1 10 100

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
IP

VDS VG
90%
QG
CH

-4.5V

QGS QGD
10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform