INTEGRATED CIRCUITS

DATA SHEET

TDA2615
2 × 6 W hi-fi audio power amplifier
Product specification 1995 May 08
Supersedes data of July 1994
File under Integrated Circuits, IC01

Philips Semiconductors
Philips Semiconductors Product specification

2 × 6 W hi-fi audio power amplifier TDA2615

FEATURES GENERAL DESCRIPTION

• Requires very few external components The TDA2615 is a dual power amplifier in a 9-lead plastic
• No switch-on/switch-off clicks single-in-line (SIL9MPF) medium power package. It has
been especially designed for mains fed applications, such
• Input mute during switch-on and switch-off
as stereo radio and stereo TV.
• Low offset voltage between output and ground
• Excellent gain balance of both amplifiers
• Hi-fi in accordance with “IEC 268” and “DIN 45500”
• Short-circuit proof and thermal protected
• Mute possibility.

QUICK REFERENCE DATA

Stereo application.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
±VP supply voltage range 7.5 − 21 V
PO output power VS = ±12 V; THD = 0.5% − 6 − W
Gv internal voltage gain − 30 − dB
Gv channel unbalance − 0.2 − dB
α channel separation − 70 − dB
SVRR supply voltage ripple rejection − 60 − dB
Vno noise output voltage − 70 − µV

ORDERING INFORMATION

TYPE PACKAGE
NUMBER NAME DESCRIPTION VERSION
TDA2615 SIL9MPF plastic single in-line medium power package with fin; 9 leads SOT110-1

1995 May 08 2
Philips Semiconductors Product specification

2 × 6 W hi-fi audio power amplifier TDA2615

BLOCK DIAGRAM

+ VP

7
VA

V ref1 TDA2615

20 kΩ
680 Ω
VB CM
1
INV1
20 kΩ 4
OUT1

2 4 kΩ
MUTE
– VP
5 kΩ
+ VP

V ref3

10 kΩ
+ VP

+ V ref2
Vref1 THERMAL
3 PROTECTION
1/2 V P / GND
voltage
comparator

VA V B
10 kΩ
– V ref2

– VP – VP

20 kΩ 6
OUT2
9 CM
INV2

8 680 Ω VB
INV1, 2 20 kΩ

V ref1

VA
5
MLA711

– VP

Fig.1 Block diagram.

1995 May 08 3
Philips Semiconductors Product specification

2 × 6 W hi-fi audio power amplifier TDA2615

PINNING FUNCTIONAL DESCRIPTION

SYMBOL PIN DESCRIPTION The TDA2615 is a hi-fi stereo amplifier designed for mains
fed applications, such as stereo radio and stereo TV. The
−INV1 1 non-inverting input 1
circuit is optimally designed for symmetrical power
MUTE 2 mute input supplies, but is also well-suited to asymmetrical power
1⁄ 1⁄ supply systems.
2VP/GND 3 2 supply voltage or ground
OUT1 4 output 1 An output power of 2 × 6 W (THD = 0.5%) can be
−VP 5 supply voltage (negative) delivered into an 8 Ω load with a symmetrical power supply
OUT2 6 output 2 of ±12 V. The gain is internally fixed at 30 dB, thus offering
a low gain spread and a very good gain balance between
+VP 7 supply voltage (positive)
the two amplifiers (0.2 dB).
INV1, 2 8 inverting input 1 and 2
A special feature is the input mute circuit. This circuit
−INV2 9 non-inverting input 2
disconnects the non-inverting inputs when the supply
voltage drops below ±6 V, while the amplifier still retains its
DC operating adjustment. The circuit features suppression
of unwanted signals at the inputs, during switch-on and
switch-off.
The mute circuit can also be activated via pin 2. When a
current of 300 µA is present at pin 2, the circuit is in the
INV1 1
mute condition.
MUTE 2
The device is provided with two thermal protection circuits.
1/2 VP / GND 3 One circuit measures the average temperature of the
OUT1 4 crystal and the other measures the momentary
temperature of the power transistors. These control
VP 5 TDA2615 circuits attack at temperatures in excess of +150 °C, so a
OUT2 6 crystal operating temperature of max. +150 °C can be
used without extra distortion.
+ VP 7
With the derating value of 6 K/W, the heatsink can be
INV1, 2 8
calculated as follows:
INV2 9
at RL = 8 Ω and VS = ±12 V, the measured maximum
MLA708 dissipation is 7.8 W.
With a maximum ambient temperature of +60 °C, the
thermal resistance of the heatsink is:

150 – 60
R th = ---------------------- – 6 = 5.5 K/W
7.8
Fig.2 Pin configuration.
The metal tab has the same potential as pin 5.

1995 May 08 4
Philips Semiconductors Product specification

2 × 6 W hi-fi audio power amplifier TDA2615

LIMITING VALUES
In accordance with the Absolute maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
±VP supply voltage − 21 V
IOSM non-repetitive peak output current − 4 A
Ptot total power dissipation see Fig.3 − 15 W
Tstg storage temperature range −55 +150 °C
Txtal crystal temperature − +150 °C
Tamb ambient operating temperature range −25 +150 °C
tsc short-circuit time short-circuit to ground; note 1 − 1 h

Note
1. For asymmetrical power supplies (with the load short-circuited), the maximum unloaded supply voltage is limited to
VP = 28 V and with an internal supply resistance of RS ≥ 4 Ω, the maximum unloaded supply voltage is limited to 32 V
(with the load short-circuited). For symmetrical power supplies the circuit is short-circuit-proof up to VP = 21 V.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

Rth j-c thermal resistance from junction to case 6 K/W

MCD368 - 2
16
Ptot
(W)
infinite heatsink
12

8
R th-hs = 5.5 K/W

0
– 25 0 50 100 150
Tamb ( o C)

Fig.3 Power derating curve.

1995 May 08 5
Philips Semiconductors Product specification

2 × 6 W hi-fi audio power amplifier TDA2615

CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply
±VP supply voltage range − 12 21 V
IORM repetitive peak output current 2.2 − − A
Operating position; note 1
±VP supply voltage range 7.5 12 21 V
Iq(tot) total quiescent current RL = ∞ 18 40 70 mA
PO output power THD = 0.5% 5 6 − W
THD = 10% 6.5 8 − W
THD total harmonic distortion PO = 4 W − 0.15 0.2 %
B power bandwidth THD = 0.5%; note 2 − 20 to 20000 − Hz
Gv voltage gain 29 30 31 dB
Gv gain unbalance − 0.2 1 dB
Vno noise output voltage note 3 − 70 140 µV
Zi input impedance 14 20 26 kΩ
SVRR supply voltage ripple rejection note 4 40 60 − dB
αcs channel separation RS = 0 46 70 − dB
Ibias input bias current − 0.3 − µA
∆VGND DC output offset voltage − 30 200 mV
∆V4−6 DC output offset voltage between two channels − 4 150 mV
MUTE POSITION (AT IMUTE ≥ 300 µA)
VO output voltage VI = 600 mV − 0.3 1.0 mV
Z2−7 mute input impedance − 9 − kΩ
Iq(tot) total quiescent current RL = ∞ 18 40 70 mA
Vno noise output voltage note 3 − 70 140 µV
SVRR supply voltage ripple rejection note 4 40 55 − dB
∆VGND DC output offset voltage − 40 200 mV
∆Voff offset voltage with respect to − 4 150 mV
operating position
I2 current if pin 2 is connected to pin 5 − − 6 mA
Mute position; note 5
±VP supply voltage range 2 − 5.8 V
IP total quiescent current RL = ∞ 9 30 40 mA
VO output voltage VI = 600 mV − 0.3 1.0 mV
Vno noise output voltage note 3 − 70 140 µV
SVRR supply voltage ripple rejection note 4 40 55 − dB
∆VGND DC output offset voltage − 40 200 mV

1995 May 08 6
Philips Semiconductors Product specification

2 × 6 W hi-fi audio power amplifier TDA2615

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Operating position; note 6
Iq(tot) total quiescent current 18 40 70 mA
PO output power THD = 0.5% 5 6 − W
THD = 10% 6.5 8 − W
THD total harmonic distortion PO = 4 W − 0.13 0.2 %
B power bandwidth THD = 0.5%; note 1 − 40 to 20000 − Hz
Gv voltage gain 29 30 31 dB
Gv gain unbalance − 0.2 1 dB
Vno noise output voltage note 3 − 70 140 µV
Zi input impedance 14 20 26 kΩ
SVRR supply voltage ripple rejection 35 44 − dB
αcs channel separation − 45 − dB
MUTE POSITION (IMUTE ≥ 300 µA)
VO output voltage VI = 600 mV − 0.3 1.0 mV
Z2−7 mute input impedance note 7 6.7 9 11.3 kΩ
Iq(tot) total quiescent current 18 40 70 mA
Vno noise output voltage note 3 − 70 140 µV
SVRR supply voltage ripple rejection note 4 35 44 − dB
∆Voff offset voltage with respect to operating − 4 150 mV
position
I2 current if pin 2 is connected to pin 5 − − 6 mA
Notes
1. VP = ±12 V; RL = 8 Ω; Tamb = 25 °C; fi = 1 kHz; symmetrical power supply IMUTE = < 30 µA (see Fig.4).
2. The power bandwidth is measured at a maximum output power (POmax) of −3 dB.
3. The noise output voltage (RMS value) is measured at RS = 2 kΩ, unweighted (20 Hz to 20 kHz).
4. The ripple rejection is measured at RS = 0 and fi = 100 Hz to 20 kHz. The ripple voltage (200 mV) is applied in phase
to the positive and the negative supply rails. With asymmetrical power supplies, the ripple rejection is measured at
fi = 1 kHz.
5. ±VP = 4 V; RL = 8 Ω; Tamb = 25 °C; fi = 1 kHz; symmetrical power supply (see Fig.4).
6. VP = 24 V; RL = 8 Ω; Tamb = 25 °C; fi = 1 kHz; asymmetrical power supply IMUTE < 30 µA (see Fig.5).
7. The internal network at pin 2 is a resistor divider of typical 4 kΩ and 5 kΩ to the positive supply rail. At the connection
of the 4 kΩ and 5 kΩ resistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread
of the zener voltage is 6.1 to 7.1 V.

1995 May 08 7
Philips Semiconductors Product specification

2 × 6 W hi-fi audio power amplifier TDA2615

TEST AND APPLICATION INFORMATION

mute input + VP

2200 µF
2 7

680 Ω 20 kΩ

220 nF 4
VI 1
22 nF
20 kΩ

3 TDA2615 8.2 Ω
R L= 8 Ω

20 kΩ
220 nF 100 nF
VI 9
6

22 nF

8 680 Ω 20 kΩ
8.2 Ω
R L= 8 Ω

– VP
MLA710 - 2

2200 µF

Fig.4 Test and application circuit with symmetrical power supply.

1995 May 08 8
Philips Semiconductors Product specification

2 × 6 W hi-fi audio power amplifier TDA2615

VP RS
mute input VS

100 nF 2200 µF
2 7

680 Ω 20 kΩ

220 nF 4
1
VI
22 nF
680 µF
20 kΩ

3 8.2 Ω
R L= 8 Ω
internal
100 µF 1/2 VP TDA2615

20 kΩ
220 nF
9
VI
6

22 nF
680 µF
8 680 Ω 20 kΩ

8.2 Ω
R L= 8 Ω
5

MLA709 - 1

Fig.5 Test and application circuit with asymmetrical power supply.

1995 May 08 9
Philips Semiconductors Product specification

2 × 6 W hi-fi audio power amplifier TDA2615

PACKAGE OUTLINE
SIL9MPF: plastic single in-line medium power package with fin; 9 leads SOT110-1

D1
q
P P1 A2

A3
q2
q1

A4
E
seating plane

pin 1 index

L c
1 9

Z e b Q
b2 w M
b1

0 5 10 mm
scale

DIMENSIONS (mm are the original dimensions)

UNIT A
A2
A3 A4 b b1 b2 c D (1) D1 E (1) e L P P1 Q q q1 q2 w Z (1)
max. max.
18.5 8.7 15.8 1.40 0.67 1.40 0.48 21.8 21.4 6.48 2.54 3.9 2.75 3.4 1.75 15.1 4.4 5.9
mm 3.7 0.25 1.0
17.8 8.0 15.4 1.14 0.50 1.14 0.38 21.4 20.7 6.20 3.4 2.50 3.2 1.55 14.9 4.2 5.7

Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

92-11-17
SOT110-1
95-02-25

1995 May 08 10
Philips Semiconductors Product specification

2 × 6 W hi-fi audio power amplifier TDA2615

SOLDERING been pre-heated, forced cooling may be necessary

immediately after soldering to keep the temperature within
Plastic single in-line packages
the permissible limit.
BY DIP OR WAVE
REPAIRING SOLDERED JOINTS
The maximum permissible temperature of the solder is
260 °C; this temperature must not be in contact with the Apply the soldering iron below the seating plane (or not
joint for more than 5 s. The total contact time of successive more than 2 mm above it). If its temperature is below
solder waves must not exceed 5 s. 300 °C, it must not be in contact for more than 10 s; if
between 300 and 400 °C, for not more than 5 s.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified storage maximum. If the printed-circuit board has

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1995 May 08 11
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Philips Semiconductors