1990 Siemens Discrete Semiconductors For Surface Mounting

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Discrete Semiconductors
for Surface Mounting
• Data Book
Discrete Semiconductors
for Surface Mounting
Data Book
Preface
At present the conventional through-hole mounting technology used for printed circuit assem-
blies is increasingly superseded by surface mounting. Instead of inserting leaded components,
special miniaturized components are directly attached and soldered to the PC board. These
new surface mounted devices (SMDs) and their packing are particularly suitable for automatic
assembly. The major advantages of surface mounting are rationalized production, reduced
board size and increased reliability.
Compared to the through-hole mounting technology, surface mounting requires more careful
planning of the overall design and production process. The better the components, PC board
layout, automatic placement, soldering method, testing and repair are attuned to each other, the
more efficiently surface mounting can be applied.
For many years diodes and transistors have been offered as part of the family of "miniature
semiconductors" or "semiconductors for film circuits". The SOT 23, which was introduced to
the market in the early sixties, is the most common package type. During the mid seventies,
the SOT 89 was added. Additional package types are the SOT 143, SOT 223 and SOD 123.
An outstanding design feature of these Siemens package versions is the closely tolerated
clearance between device and PC board (0.1 mm), which is essential for good glueing
conditions.
The available range of products is considerable. Practically all standard devices provided with
leads are now available in miniature package as well.
Owing to the allround experience Siemens has gained in this field, components in conventional
package types can be easily converted into components in miniature package. Thus, a quick
adaption to market demands is possible. It should be especially mentioned here that LEDs are
available in SOT 23 package as well.
SMD - Surface Mounted Device
Literature Selector
Further literature concerning e. g. SMD technology is listed in the following survey and can be
obtained from:
Siemens Components, Inc.,
186 Wood Avenue South, Iselin, NJ 08830,
1-800-888-7730, Fax (908) 632-2830
Title Ordering code

Tuner Semiconductor Devices, Data 800k 83-83587 -X-X-7600
Transistors for Amplifier and Switching Applications, Data 800k 83-83789-X-X-7600
Discrete Semiconductors for Surface Mounting SMD, Data 800k 83-83497 -X-X-7600
An Introduction to Surface Mounting, Product Information 83-83289-X-X-7600
SOT-23 Semiconductors, Off-Print . 83-83342-X-X-7600
SMD Components, Short Form Catalog 83-83907 -X-X-7400
Recommendation for PC8 Layouts, Product Information 83-83580-X-X-7600
Components Library, Product Information 89-83695-X-X-7600
Soldering in SMD Technology, Product Information 89-83741-X-X- 7600
SIPMOS Small-Signal Transistors 8352-86155-XX-7400
4 Siemens
Table of Contents
Page
Summary of types ......................................................................7
Technical information ................................................................ .19
Type designation in accordance with Pro Electron ..............................................19
Terms and symbols (DIN 41785) .............................................................20
Standards .................................................................................21
Maximum ratings ...........................................................................22
Characteristics ............................................................................22
Thermal resistances ........................................................................22
Quality specifications ................................................................25
Definition of defects ........................................................................25
AQL values ................................................................................25
Sampling plan for normal inspection ..........................................................26
Package outlines ......................................................................28
Mounting instructions ................................................................29
Mode of delivery (packing) ..................................................................29
Blister tape ............................. '...................................................30
PCB layout ................................................................................35
Glueing ...................................................................................36
Connecting methods .......................................................................36
Evaluation of solder joints ...................................................................38
Diodes ..................................................................................39
Transistors .. ..........................................................................189
GaAsFETS ............................................................................916
GaASMMICS ..........................................................................934
Sensors ........................................... , .................................. .946
Siemens 5
Summary of Types
Switching diodes
lYpe Maximum Ratings Characteristics Package Page
(Tamb=2S0C)
VRII IF V,atl, trr
(V) (mA) (V) (mA) (ns)
BAL 74 50 250 s1.0 100 s4 SOT-23 47
BAL99 70 250 s1.0 50 s6 SOT-23 51
BAR 74 50 250 s1.0 100 s4 SOT-23 65
BAR 99 70 250 s1.0 50 s6 SOT-23 69
BAS 16 85 250 s1.0 50 s6 SOT-23 73
BAS 19 120 200 s1.0 100 s50 SOT-23 77
BAS 20 200 200 s1.0 100 s50 SOT-23 77
BAS 21 250 200 s1.0 100 s50 SOT-23 77
BAS 28 (Dual) 85 .250 s1.0 50 s6 SOT-143 81
BAS78A 50 1000 s1.6 1000 1fJ.S SOT 223 91
BAS78B 100 1000 ,s,.6 1000 1fJ.S SOT 223 91
BAS78C 200 1000 s1.6 1000 1fJ.S SOT 223 91
BAS 78 D 400 1000 s1.p 1000 1fJ.S SOT 223 91
BAS 79 A (Dual) 50 1000 s1.6 1000 1fJ.S SOT 223 94
BAS 79 B (Dual) 100 1000 s1.6 1000 1fJ.s SOT 223 94
BAS 79 C (Dual) 200 1000 s1.6 1000 1fJ.s SOT 223 94
BAS 79 D (Dual) 400 1000 s1.6 1000 1fJ.s SOT 223 94
BAS 116 85 250 s1.0 10 s3fJ.s SOT-23 97
BAV 70 (Dual) 70 250 s1.0 50 s6 SOT-23 106
BAV 74 (Dual) 50 250 s1.0 100 s4 SOT-23 110
BAV 99 (Dual) 70 250 s1.0 50 s6 SOT-23 114
BAV 170 (Dual) 70 250 s1.0 10 s3fJ.s SOT-23 118
BAV 199 (Dual) 70 250 s1.0 10 s3fJ.s SOT-23 122
BAW 56 (Dual) 70 250 s1.0 50 s6 SOT-23 126
BAW78 A 50 1000 s1.6 1000 1fJ.s SOT-89 130
BAW78B 100 1000 s1.6 1000 1fJ.s SOT-89 130
BAW78C 200 1000 s1.6 1000 1fJ.s SOT-89 130
BAW78D 400 1000 s1.6 1000 1fJ.s SOT-89 130
BAW 79 A (Dual) 50 . 1000 s1.6 1000 1fJ.s SOT-89 133
BAW 79 B (Dual) 100 1000 s1.6 1000 1fJ.s SOT-89 133
BAW 79 C (Dual) 200 1000 s1.6 1000 1fJ.s SOT-89 133
BAW 79 D (Dual) 400 1000 s1.6 1000 1fJ.s SOT-89 133
BAW 100 (Dual) 70 250 s1.0 50 s6 SOT-143 -
BAW 101 (Dual) 300 200 s1.3 100 1fJ.s SOT-143 136
BAW 156 (Dual) 70 250 s1.0 10 s3fJ.s SOT-23 139
BGX50A (Bridge) 70 140 s2.6 100 s6 SOT-143 160
5MBD 914 100 250 s1.0 10 s4 SOT-23 164
Siemens 7
Summary of Types
Switching diodes
Type Maximum Ratings Characteristics Package Page
(Tamb=25°C)
VRM IF V,atl, trr
(V) (mA) (V) (mA) (ns)
5MBD 2835 (Dual) 75 250 ::;1.0 50 ::;6 SOT-23 168
5MBD 2836 (Dual) 75 250 ::;1.0 50 ::;6 SOT-23 168
5MBD 2837 (Dual) 75 250 ::;1.0 50 ::;6 SOT-23 172
5MBD 2838 (Dual) 75 250 ;;;1.0 50 ::;6 SOT-23 172
5MBD 6050 70 250 ::;1.1 100 ::;10 SOT-23 176
5MBD 6100 (Dual) 70 250 ::;1.1 100 ::;15 SOT-23 180
5MBD 7000 (Dual) 100 250 ::;1.1 100 ::;15 SOT-23 184
MOSFET tetrodes
Type Vos 10 Tch PIo' g.. Gpo F Vos 10 f Package Page
V rnA °C rnW rnS dB dB V rnA MHz
BF989 20 30 150 200 12 16,5 2,8 15 7 800 SOT-143 362
BF993 20 50 150 200 25 25 1,5 15 10 200 SOT-143 370
BF994 S 20 30 150 200 18 25 1 15 10 200 SOT-143 376
BF995 20 30 150 200 17 23 1,8 15 10 200 SOT-143 382
BF996 S 20 30 150 200 18 18 1,8 15 10 800 SOT-143 392
BF997 20 30 150 200 18 25 1 15 10 200 SOT-143 399
BF 998 12 30 150 200 24 20 1 8 10 800 SOT-143 405
Schottky Diodes for General Purposes

Type Max. Characteristics at TA = 25°C Package Page
ratings
VR
V
IF
rnA
VBR
V
VF
rnV
CT
pF
IR
ILA
I.
ps
BAS 40 40 80 40 380 5 1.0 100 SOT-23
BAS 40-04 SOT-23
BAS 40-05 SOT-23 85
BAS 40-06 SOT-23
BAS 40-07 SOT-143
BAS 70 70 40 70 410 2 0.1 100 SOT-23
BAS 70-04 SOT-23
BAS 70-05 SOT-23 88
BAS 70-06 SOT-23
BAS 70-07 SOT-143
BAT 17 4 30 4 350 1 0.25 - SOT-23
BAT 17-04 SOT-23
BAT 17-05 SOT-23 101
BAT 17-06 SOT-23
BAT 64 30 200 - 1000 6 200 - SOT-23 104
8 Siemens
Summary of Types
Switching transistors
TYpe Maximum Ratings Characteristics (Tamb = 25°C) Package Page
CPN=:)
PNP=P VCEO Ic P. IT hFE at Ic VCE VCE("')
(V) (rnA) (mW) (MHz) (rnA) (V) (V)
BSS63 P 100 800 330 150 ;::,30 10 5 ",;0.25 SOT-23 279
BSS64 N 80 800 330 100 80 10 1 ",;0.7 SOT-23 275
BSS79 N 40 800 330 250 40 - 300' 150 10 "';1.3 SOT-23 701
BSS80 P 40 800 330 250 40 - 300' 150 10 ",;1.6 SOT-23 706
BSS81 N 35 800 330 250 40 - 300' 150 10 ",;1.3 SOT-23 701
BSS82 P 60 800 330 250 40 - 300' 150 10 "';1.6 SOT-23 706
PZT2222 N 30 600 1500 200 100 - 300 150 10 ",;0.4 SOT-223 758
PZT2222A N 40 600 1500 200 100 - 300 150 10 ",;0.3 SOT-223 758
PZT2907 P 40 600 1500 200 100 - 300 150 10 ",;0.4 SOT-223 763
PZT2907A P 60 600 1500 200 100 - 300 150 10 ",;0.4 SOT-223 763
PZT3904 N 40 200 1500 300 100 - 300 10 1 ",;0.3 SOT-223 768
PZT3906 P 40 200 1500 250 100 - 300 10 1 ",;0.4 SOT-223 773
5MBT2222 N 30 600 330 250 100 - 300 150 10 ",;0.4 SOT-23 794
SBMT2222A N 40 600 330 300 100 - 300 150 10 "';0.3 SOT-23 794
5MBT2907 P 40 600 330 200 100 - 300 150 10 ",;0.4 SOT-23 800
5MBT2907A P 60 600 330 200 100 - 300 150 10 ",;0.4 SOT-23 800
5MBT3904 N 40 200 330 300 100 - 300 10 1 "';0.3 SOT-23 806
5MBT3906 P 40 200 330 250 100 - 300 10 1 ",;0.4 SOT-23 812
5MBTA70 P 40 200 330 125 40 - 400 5 10 ",;0.25 SOT-23 863
SXT2222A N 40 600 1000 300 100- 300 150 10 "';0.3 SOT-89 883
SXT2907A P 60 600 1000 200 100 - 300 150 10 "';0.4 SOT-89 888
SXT3904 N 40 200 1000 300 100 - 300 10 1 "';0.3 SOT-89 894
SXT3906 P 40 200 1000 250 100 - 300 10 1 ",;0.4 SOT-89 900
MOSFET triodes
TYpe Vos 10 Tch Ptot
9" Gpo F Vos 10 f Package Page
V rnA °C rnW rnS dB dB V rnA MHz
BF543 20 30 150 200 12 22 1 10 4 200 SOT-23 302
BF999 20 30 150 200 16 25 1 10 10 200 SOT-23 413
Siemens 9
Summary of Types
High voltage transistors

Type Maximum Ratings Characteristics (Tamb = 25°C) Package Page
rpN=~ VCEO Ic p, fT hFE at Ie VCE VCE("')
PNP=P
(V) (mA) (mW) (MHz) (mA) (V) (V)
BF622 N 250 100 1000 100 ;0:50 25 20 :50.5 SOT-89 326
BF623 p 250 100 1000 100 ;0:50 25 20 :50.5 SOT-89 330
BF720 N 300 100 1500 100 ;0:40 25 20 :50.5 SOT-223 337
BF721 P 300 100 1500 100 ;0:40 25 20 :50.5 SOT-223 341
BF722 N 250 100 1500 100 ;0:50 25 20 :50.5 SOT-223 337
BF723 P 250 100 1500 100 ;0:50 25 20 :50.5 SOT-223 341
BFN16 N 250 500 1000 70 ;0:40 30 10 :50.4 SOT-89 418
BFN17 P 250 500 1000 100 ;0:40 30 10 :50.4 SOT-89 422
BFN18 N 300 500 1000 70 ;0:30 30 10 :50.5 SOT-89 418
BFN19 p 300 500 1000 100 2:30 30 10 :50.5 SOT-89 422
BFN20 N 300 100 1000 100 ;0:40 25 20 :50.5 SOT-89 426
BFN21 p 300 100 1000 100 ;0:40 25 20 :50.5 SOT-89 430
BFN22 N 250 100 360 100 ;0:50 25 20 :50.5 SOT-23 434
BFN23 P 250 100 360 100 ;0:50 25 20 :50.5 SOT-23 438
BFN24 N 250 500 360 70 ;0:40 30 10 :50.4 SOT-23 442
BFN25 p 250 500 360 100 ;0:40 30 10 :50.4 SOT-23 446
BFN26 N 300 500 360 70 ;0:30 30 10 :50.5 SOT-23 442
BFN27 P 300 500 360 100 ;0:30 30 10 :50.5 SOT-23 446
BFN36 N 250 500 1500 70 ;0:40 30 10 :50.4 SOT-223 450
BFN37 P 250 500 1500 100 ;0:40 30 10 :50.4 SOT-223 454
BFN38 N 300 500 1500 70 ;0:30 30 10 :50.5 SOT-223 450
BFN39 P 300 500 1500 100 ;0:30 30 10 :50.5 SOT-223 454
PZTA42 N 300 500 1500 50 ;0:40 30 10 :50.5 SOT-223 782
PZTA43 N 200 500 1500 50 ;0:40 30 10 :50.4 SOT-223 782
PZTA92 P 300 500 1500 50 ;0:25 30 10 :50.5 SOT-223 790
PZTA93 P 200 500 1500 50 ;0:25 30 10 :50.4 SOT-223 790
5MBTA42 N 300 500 360 50 ;0:40 30 10 :50.5 SOT-23 851
5MBTA43 N 200 500 360 50 ;0:40 30 10 :50.4 SOT-23 851
5MBTA92 P 300 500 360 50 ;0:25 30 10 :50.5 SOT-23 867
5MBTA93 P 200 500 360 50 ;0:25 30 10 :50.4 SOT-23 867
SXTA42 N 300 500 1000 50 ;0:40 30 10 :50.5 SOT-89 906
SXTA43 N 200 500 1000 50 ;0:40 30 10 :50.4 SOT-89 906
SXTA92 P 300 500 1000 50 ;0:25 30 10 :50.5 SOT-89 910
SXTA93 P 200 500 1000 50 ;0:25 30 10 :50.4 SOT-89 910
10 Siemens
Summary of Types
AF transistors -Available in hFE sub groups.
'TYpe Maximum Ratings Characteristics (T.mb = 25°C) Package Page

(NPN=N) VCEO Ic p, fT hFE at Ic VCE VCEI ••')
PNP=P (V) (rnA) (mW) (MHz) (rnA) (V) (V)
BC807 P 45 1000 330 220 100 - 630' 100 1 :s0.7 SOT-23 191
BC808 P 25 1000 330 200 100 - 630' 100 1 :s0.7 SOT-23 191
BC817 N 45 1000 330 170 100 - 630' 100 1 :s0.7 SOT-23 195
BC818 N 25 1000 330 170 100 - 630' 100 1 :s0.7 SOT-23 195
BC846 N 65 200 330 200 100 - 450' 2 5 :s0.6 SOT-23 199
BC847 N 45 200 330 200 110 - 800' 2 5 :s0.6 SOT-23 199
BC848 N 30 200 330 200 110 - 800' 2 5 :s0.6 SOT-23 199
BC849 N 30 200 330 200 200 - 800' 2 5 :s0.6 SOT-23 199
BC850 N 45 200 330 200 200 - 800' 2 5 :s0.6 SOT-23 199
BC856 P 65 200 330 250 125 - 475' 2 5 :s0.6 SOT-23 206
BC857 P 45 200 330 250 125 - 800' 2 5 :s0.6 SOT-23 206
BC858 P 30 200 330 250 125 - 800' 2 5 :s0.6 SOT-23 206
BC859 P 30 200 330 250 220 - 900' 2 5 :s0.6 SOT-23 206
BC860 P 45 200 330 250 220 - 800' 2 5 :s0.6 SOT-23 206
BCW60 N 32 200 330 200 120 - 630' 2 5 :s0.25 SOT-23 253
BCW61 P 32 200 330 250 120 - 630' 2 5 :s0.25 SOT-23 260
BCW65 N 32 1000 330 170 100 - 630' 100 5 :s0.7 SOT-23 267
BCW66 N 45 1000 330 170 100 - 630' 100 5 :s0.7 SOT-23 267
BCW67 P 32 1000 330 200 100 - 630' 100 5 :s0.7 SOT-23 271
BCW68 P 45 1000 330 200 100 - 630~ 100 5 :s0.7 SOT-23 271
BCP51 P 45 1500 1500 125 40 - 250' 150 2 :s0.5 SOT-223 221
BCP52 P 60 1500 1500 125 40 - 250' 150 2 :s0.5 SOT-223 221
BCP53 P 80 1500 1500 125 40 - 250' 150 2 :s0.5 SOT-223 221
BCP54 N 45 1500 1500 100 40 - 250' 150 2 :s0.5 SOT-223 225
BCP55 N 60 1500 1500 100 40 - 250' 150 2 :s0.5 SOT-223 225
BCP56 N 80 1500 1500 100 40 - 250' 150 2 :s0.5 SOT-223 225
BCP68 N 20 2000 1500 100 63 - 400 500 1 :s0.5 SOT-223 229
BCP69 P 20 2000 1500 100 63 - 400 500 1 :s0.5 SOT-223 233
Siemens 11
Summary of Types
AF transistors *Available in hFE sub groups.
Type Maximum Ratings =25°C)

Characteristics (Tamb Package Page
CPN=:)
PNP=P VCEO Ic P. fT hFEat Ic VCE VCE("')
(V) (mA) (mW) (MHz) (mA) (V) (V)
BCX41 N 125 1000 330 100 ~63 100 1 ::;;0.9 SOT-23 275
BCX42 P 125 1000 330 150 ~63 100 1 ::;;0.9 SOT-23 279
BCX51 p 45 1500 1000 125 40 - 250' 150 2 ::;;0.5 SOT-89 283
BCX52 P 60 1500 1000 125 40 - 250' 150 2 ::;;0.5 SOT-89 283
BCX53 P 80 1500 1000 125 40 - 250' 150 2 ::;;0.5 SOT-89 283
BCX54 N 45 1500 1000 100 40 - 250' 150 2 ::;;0.5 SOT-89 287
BCX55 N 60 1500 1000 100 40 - 250' 150 2 ::;;0.5 SOT-89 287
BCX56 N 80 1500 1000 100 40 - 250' 150 2 ::;;0.5 SOT-89 287
BCX68 N 20 2000 1000 100 63 - 400' 500 1 ::;;0.5 SOT-89 291
BCX69 P 20 2000 1000 100 63 - 400' 500 1 ::;;0.5 SOT-89 295
BCX70 N 45 200 330 200 120 - 630' 2 5 ::;;0.25 SOT-23 253
BCX71 P 45 200 330 250 120 - 630' 2 5 ::;;0.25 SOT-23 260
5MBT4124 N 25 200 330 300 120 - 360 2 1 ::;;0.3 SOT-23 818
5MBT4126 p 25 200 330 250 120-360 2 1 ::;;0.4 SOT-23 821
5MBT5086 P 50 50 330 40 ~150 10 5 ::;;0.3 SOT-23 824
5MBT5087 p 50 50 330 40 ~250 10 5 ::;;0.3 SOT-23 824
5MBT6428 N 50 200 330 100 ~250 10 5 ::;;0.6 SOT-23 834
5MBT6429 N 45 200 330 100 ~500 10 5 ::;;0.6 SOT-23 834
5MBTA05 N 60 500 330 100 ~50 10 1.0 ::;;0.25 SOT-23 839
5MBTA06 N 80 500 330 100 ~50 10 1.0 ::;;0.25 SOT-23 839
5MBTA20 N 40 200 330 125 40 - 400 5 10 ::;;0.25 SOT-23 847
5MBTA55 P 60 500 330 50 ~50 10 1.0 ~0.25 SOT-23 855
5MBTA56 P 80 500 330 50 ~50 10 1.0 ::;;0.25 SOT-23 855
12 Siemens
Summary of Types
Darlington Transistors
(NPN=N) VCEO Ic P. fr hFE at Ic VCE VCE(Sa')
PNP=P (V) (mA) (mW) (MHz) (mA) (V) (V)
BCP28 P 30 800 1500 200 ?:20,OOO 100 5 :s1.0 SOT-223 213
BCP29 N 30 800 1500 150 ?:20,OOO 100 5 :s1.0 SOT-223 217
BCP48 P 60 800 1500 200 ?:10,OOO 100 5 :s1.0 SOT-223 213
BCP49 N 60 800 1500 150 ?:10,OOO 100 5 :s1.0 SOT-223 217
BCV26 P 30 800 360 200 ?:20,OOO 100 5 :s1.0 SOT-23 237
BCV27 N 30 800 360 170 2:20,000 100 5 :s1.0 SOT-23 241
BCV28 P 30 800 1000 200 2:20,000 100 5 :s1.0 SOT-89 245
BCV29 N 30 800 1000 150 2:20,000 100 5 :s1.0 SOT-89 249
BCV46 P 60 800 360 200 2:10,000 100 5 :s1.0 SOT-23 237
BCV47 N 60 800 360 170 2:10,000 100 5 :s1.0 SOT-23 241
BCV48 P 60 800 1000 200 2:10,000 100 5 :s1.0 SOT-89 245
BCV49 N 60 800 1000 150 ?:10,OOO 100 5 :s1.0 SOT-89 249
BSP50 N 45 2000 1500 200 2:2,000 500 10 :s1.8 SOT-223 648
BSP51 N 60 2000 1500 200 2:2,000 500 10 :s1.8 SOT-223 648
BSP52 N 80 2000 1500 200 ?:2,OOO 500 10 :s1.8 SOT-223 648
BSP60 P 45 2000 1500 200 2:2,000 500 10 :s1.8 SOT-223 653
BSP61 P 60 2000 1500 200 2:2,000 500 10 :s1.8 SOT-223 653
BSP62 P 80 2000 1500 200 2:2,000 500 10 :s1.8 SOT-223 653
PZTA13 N 30 500 1500 125 2:10,000 100 5 :s1.5 SOT-223 778
PZTA14 N 30 500 1500 125 2:20,000 100 5 :s1.5 SOT-223 778
PZTA63 P 30 500 1500 125 2:10,000 100 5 :s1.5 SOT-223 786
PZTA64 P 30 500 1500 125 2:20,000 100 5 :s1.5 SOT-223 786
5MBT6427 N 40 500 360 130 ?:20,OOO 100 5 :s1.5 SOT-23 830
5MBTA13 N 30 500 330 125 2:10,000 100 5 :s1.5 SOT-23 843
5MBTA14 N 30 500 330 125 2:20,000 100 5 :s1.5 SOT-23 843
5MBTA63 P 30 500 330 125 ?:10,OOO 100 5 :s1.5 SOT-23 859
5MBTA64 P 30 500 330 125 2:20,000 100 5 :s1.5 SOT-23 859
Siemens 13
Summary of Types
SIPMOS'" small-signal transistors

Type Maximum Ratings Characteristics (T8mb = 25'C) Package Page
(" channel =N) VOS 10 P, loss at Vos RoS{on) VGS{Ih)
pchannel=P
(V) (rnA) (mW) (""A) (V) (il) (V)
BSP88 N 240 260 1500 $20.0 240 $6.0 s 1.2 80T-223 658
BSP89 N 240 340 1500 $60 240 $6.0 $ 2.0 80T-223 663
BSP92 P 240 180 1500 $60 240 $20.0 $ 2.0 SOT-223 668
BSP125 N 600 110 1500 $0.1 600 $45.0 $ 2.5 80T-223 673
B8P129* N 240 190 1500 $0.1 240 $20.0 $-0.7 80T-223 678
BSP135* N 600 100 1500 $0.1 600 $60.0 $-0.7 80T-223 680
BSP149* N 200 440 1500 $0.2 240 $3.5 $-0:7 80T-223 682
B8P295 N 50 1700 1500 $1.0 50 sO.3 $ 2.0 80T-223 684
B8P296 N 100 1000 1500 $1.0 100 $0.8 $ 2.0 80T-223 689
BSP297 N 200 600 1500 $1.0 200 $2.0 $ 2.0 SOT-223 694
B8P315 P 50 1000 1500 $1.0 50 sO.95 s 2.0 80T-223 699
B8S84 P 50 130 360 $15 50 $10.0 $ 2.0 80T-23 712
B8887 N 240 290 1000 $60 240 $6.0 $ 2.0 80T-89 716
BSS119 N 100 170 360 $0.5 100 $6.0 $ 2.6 SOT-23 724
B8S123 N 100 170 360 $1.0 100 $6.0 $ 2.0 SOT-23 730
BSS131 N 240 100 360 $15 240 $16 $ 2.0 80T-23 736
BSS138 N 50 200 360 0.5 50 $3.5 $ 1.6 SOT-23 742
B8S139* N 250 40 360 $0.1 250 $100 $-0.7 SOT-23 748
B88192 P 240 150 1000 $60 240 $20 $ 2.0 80T-89 752
SN7002 N 60 190 360 $1.0 60 $5.0 $ 2.0 80T-23 871
SP0610T P 60 130 360 $1.0 60 $10 $ 2.0 SOT-23 877
*Depletlon mode
14 Siemens
Summary of Types
RF transistors
(NPN=N) VeEo Ie P. fr leBo hFE at Ie VeE
PNP=P (V) (rnA) (mW) (MHz) (nA) (rnA) (V)
BF517 N 15 25 280 2000 :s50 2:25 5 10 SOT-23 299
BF550 P 40 150 330 350 :s50 2:50 1 10 SOT-23 307
BF554 N 20 30 280 250 :s100 2:60 1 10 SOT-23 312
BF569 P 35 30 280 925 :s100 2:20 3 10 SOT-23 316
BF579 P 20 30 280 1600 :s100 2:20 10 10 SOT-23 319
BF599 N 25 25 280 550 :s100 2:38 7 10 SOT-23 322
BF660 P 30 25 280 700 :s50 2:30 3 10 SOT-23 334
BF770A N 15 50 280 4500 :s50 2:30 25 8 SOT-23 345
BF771 N 12 80 300 7000 :s50 100 30 8 SOT-23 348
BF772 N 12 80 300 7000 :s50 100 30 8 SOT-143 352
BF775 N 12 30 280 3500 :s50 2:25 5 6 SOT-23 356
BF799 N 20 50 280 1100 :s100 2:40 20 10 SOT-23 359
BFP81 N 16 30 300 5800 :s100 2:50 15 10 SOT-143 458
BFP93A N 12 50 250 5500 :s50 2:40 30 5 SOT-143 479
BFP193 N 12 80 300 7000 :s50 100 30 8 SOT-89 495
BFQ17P N 25 300 1000 1200 :s100 2:25 150 5 SOT-89 512
BFQ19P N 15 150 1000 5100 :s100 2:25 50 10 SOT-89 516
BFQ19S N 15 150 1000 5100 :s100 2:25 50 10 SOT-89 520
BF029P N 15 30 280 5000 :s50 2:50 10 6 SOT-23 526
BFQ64 N 20 250 1000 3000 :s200 2:25 120 5 SOT-80 536
BFQ81 N 16 30 280 5800 :s100 2:50 15 10 SOT-23 540
BFR35AP P 12 30 280 4900 :s50 2:40 5-20 6 SOT-23 560
BFR92P N 15 30 280 5000 :s50 2:40 14 10 SOT-23 577
BFR93A N 12 50 250 5500 :s50 2:40 30 5 SOT-23 594
BFR93P N 15 50 280 5000 :s50 2:30 25 5 SOT-23 602
BFR106 N 15 100 350 3700 :s100 2:25 30 6 SOT-23 611
BFR193 N 12 80 300 7000 :s50 100 30 8 SOT-23 614
BFS17P N 15 50 280 2500 :s50 2:20 25 1 SOT-23 631
BFT92 P 15 35 200 5000 :s50 2:20 14 10 SOT-23 640
BFT93 P 12 50 200 5000 :s50 2:20 30 5 SOT-23 644
Siemens 15
Summary of Types
PIN diodes
'tYpe Maximum Ratings Characteristics (T.."b = 25°C) Package Page
VR IF Co VF R, IR at VR
(V) (rnA) (pF) (V) (n) (nA) (V)
BA582 35 100 :s1.1 :51.0 :50.5 20 20 SOO-123 41
BA585 50 50 :s0.6 :s1.1 :57.0 50 30 SOO-123 43
BA885 50 50 :s0.6 :s1.1 :57.0 50 30 SOT-23 45
BAR 14-1 100 100 :50.5 :51.0 9 100 50 SOT-23 55
BAR 15-1 100 100 :s0.5 :s1.0 9 100 50 SOT-23 55
BAR 16-1 100 100 :s0.5 :51.0 9 100 50 SOT-23 55
BAR 17 100 100 :s0.55 :51.0 9 100 50 SOT-23 58
BAR 60 100 100 0.2-0.3 :51.1 9 100 50 SOT-143 61
BAR 61 100 100 0.2-0.3 :s1.1 9 100 50 SOT-143 61
Tuning diodes
Type Maximum Ratings =
Characteristics (Tomb 25°C) Package Page
VRM IF CD at VR CD at VR
(V) (rnA) (pF) (V) (pF) (V)
BB419 30 20 26-32 3 4.3-6 25 SOO-123 143
BB512 12 50 440-520 1 16.5-29 8.5 SOO-123 145
BB515 30 20 17.7 1 1.8-2.4 28 SOO-123 147
BB619 30 20 37.5-39 1 2.5-3.2 28 SOO-123 149
BB620 30 20 69 1 3.15 28 SOO-123 151
BB804 20 50 42-47.5 2 25 8 SOT-23 153
BB811 30 20 9.8 1 1 28 SOO-123 156
BB814 20 50 45 2 20 8 SOT-23 158
16 Siemens
Summary of Types
GaAs FETs
Type Max. ratings Characteristics at TA 25°C = Package Page
VOS
V V
-VG,s -VG2S ID
V rnA
loss
rnA
F
dB 1~8 IGHz
atf
CF739 10 6 6 80 10 1.8 117 11.75 SOT-143 917
GaAs FETs
Type Max. ratings Characteristics at T A 25°C = Package Page
Vos -VGS ID gm F IGHz
at f
V V rnA rnS dB IGo
dB
CFY30 5 -4 ... +0.5 80 30 1.4 111.5 14 SOT-143 923
GaAs MMICs
Type Characteristics at TA =25°C Package Page
VOS 10 f G F IP3
V rnA MHz dB dB dBrn
CGY50 5.5 ... 7.5 60 200 ... 1800 8.5 3.0 31 SOT-143 935
Temperature sensors
Type R25 R25-Tol. I 1: TA Package Page
(typ) 'N= 1 rnA t=10 rns Air Oil
n % rnA s s °C
KTY 13 A 2000 ±1 7 7 1 -50 ... +150 SOT-23 949
KTY 13 B 2000 ±2 7 7 1 -50 ... +150 SOT-23 949
KTY 13 C 2000 ±5 7 7 1 -50 ... +150 SOT-23 949
KTY 13 D 2000 ±10 7 7 1 -50 ... +150 SOT-23 949
Position sensor
Type V20 VR. "N R,o Package Page
rnV rnV rnA n
KSY 13 95 ... 145 :s±30 5 900 ... 1200 SOT-143 947
Siemens 17
Technical Information
Type designation in accordance with Pro Electron

This type designation applies to small-signal semiconductor components - in contrast to inte-
grated circuits - multiples of these components and semiconductor chips.
The number of the basic type consists of:

Two letters and a three-digit code
First letter
gives information about the material.
A. Germanium or other material with a band gap of 0.6 .. ·1.0 eV

B. Silicon or other material with a band gap of 1.0·· ·1.3 eV
C. Gallium-arsenide or other material with a band gap of 1.3 eV
R. Compound material (e.g. cadmium-sulfide)
Second letter
indicates the function for which the device is primarily designed.
A. Diode: signal, low power
B. Diode: variable capacitance
C. Transistor: low power, audio frequency
D. Transistor: power, audio frequency
E. Diode: tunnel
F. Transistor: low power, high frequency
G. Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator)
H. Diode: magnetic sensitive
L. Transistor: power, high frequency
N. Optocoupler
P. Radiation-sensitive semiconductor component
a. Radiation-emitting semiconductor component
R. Control or switching device: low power (e.g. thyristor)
S. Transistor: low power, switching
T. Control or switching device: power (e.g. thyristor)
U. Transistor: power switching
X. Diode: multiplier, e.g. varactor, step recovery
Y. Diode: rectifier, booster
Z. Diode: voltage reference or regulator; transient voltage suppressor diode
The three-digit code of the type designation consists of:

- a three-digit number, running from 100 to 999, for devices primarily intended for consumer
equipment etc.
- one letter and a two-digit number for devices primarily intended for industrial/professional
equipment. This letter has no fixed meaning. .
Siemens 19
Terms and symbols (DIN 41785)
The notation of currents, voltages, powers (alternate, continuous and mean values) and types
of resistance (alternate or continuous) is represented by small or capital lettering of the sym-
bols.
Symbols
Letter symbols for currents, voltages and powers
Small letters are used for the representation of instantaneous values which vary with time.
Examples: i, v, P
Capital letters are used for the representation of continuous (dc), average (mean), root-me an-
square and periodic peak (maximum) values, i.e. time-constant values of current, voltage and
power.
Examples: [, V; P
Subscripts
The following subscripts are used:
E, e emitter
B, b base
C, c collector
F, f forward direction (diode in forward direction)
R, r reverse direction (diode in reverse direction)
M, m peak (maximum) value
av average (mean) value
Subscripts representing peak or mean values can be omitted if there is no possibility of confu-
sion.
Subscripts with capital letters are used for total values counted from zero, e.g. for instanta-
neous, continuous (dc), mean (average), root-me an-square and peak (maximum) values.
Examples: ic, Ic, VSE, VSE, Pc, Pc
Subscripts with small letters are used for values of varying components, e.g. instantaneous
values, peak (maximum) and root-mean-square values counted from the mean value.
Examples: ie, Ie, Vbe, Vbe, Pc, Pc
In order to distinguish peak, mean and root-mean-square values, further subscripts can be
added. The recommended abbreviations are:
Peak values M,m
Mean values (average values) Av, av
Examples: [CM, [CAV, [em, [cav
Sign" - " can also be used over the symbol for peak values:
Examples: i c, ie
20 Siemens
I: --Time
--I No Signal 1--- - -- ---- With Signal--------------
Ic DC value, no signal
ICAV (Arithmetic) mean value of total current (referred to zero)
I CM, i c Peak value of total current (referred to zero)
IcRMS Root-mean-square value of total current (referred to zero)
Ieav (Arithmetic) mean of the varying component which is superimposed on the closed-
circuit direct current I c (referred to the DC no-signal value I c)
I c, I ems Root-mean-square value of the varying component (referred to the mean value I CAV)
I em, i c Peak value of the varying component (referred to the arithmetic mean I CAV)
ic Instantaneous total value (referred to zero)
ie Instantaneous value of the varying component (referred to the arithmetic mean ICAV)
The following equations correspond to the given values in the above diagram:
ICAV Ic + Ieav
=
iCM Ic = ICAV + Iem
=
IcRMS = vi 12 cAV + [2erms
Ic ~ICAV+ic
Standards
For detailed information please refer to the following DIN literature:
DIN 41782: Diodes
DIN 41785: Maximum Ratings
DIN 41791: General Instructions
DIN 41852: Semiconductor Technology
DIN 41853: Terms Relating to Diodes
DIN 41854: Terms Relating to Bipolar Transistors
Siemens 21
Maximum ratings
The maximum ratings specified are absolute ratings which, if exceeded, may result in the de-
struction or permanent functional impairment of the component. When testing the component,
as for example in respect to breakdown voltages, or during application, protection is to be pro-
vided in order to reliably ensure that maximum ratings are not exceeded.
Characteristics
Typical characteristics describe the component behavior at defined operating conditions. The
numerical values and diagrams pertain to the component type and shall not be considered as
characteristics of an individual component. The minimum and maximum ratings stated for rea-
sons of essential quality and application requirements describe the actual spread of the charac-
teristics, whereas spread curves in diagrams usually specify the spread range which is to be ex-
pected. Electrical values are grouped into "static" DC values and "dynamic" AC values. The
thermal resistance is closely related to the maximum ratings and, constituting the upper spread
value, comes immediately after the maximum ratings. The component's case data is defined by
reference to standard sheets and dimensional drawings.
Thermal resistance
The heat dissipation of SMOs depends on material and thickness of the PC board and of the
conductor paths (inherent heating). as well as on the packing density (external heating). Hence,
inherent and external heating determine the junction temperature, and thus the permissible
thermal stress of SMOs.
The values for thermal resistance given in the data sheets should only be used for rough esti-
mations of the junction temperature 1i, since they were measured under certain laboratory con-
ditions, where no regard was paid to specific applications.
The thermal resistance can be calculated by:
R thJL = Thermal resistance between junction

RthJA = RthJL + RthLS + RthSA and terminals of the component
RthLS = Thermal resistance between terminals

and solder pads of the substrate
RthSA = Thermal resistance between substrate

and enVironment, e.g. air or cooling
area
The Internal thermal resistance RthJL is

determined by the design of the compo-
nent and can therefore be exactly speci-
fied, whereas the external thermal resis-
tance, being the sum of RthLS + RthSA,
Environment depends on the individual application.
22 Siemens
Groups according to total power dissipation

SMDs are grouped according to their max. permissible power dissipation Ptot :
Group Package: SOT 23, SOT 143
Diodes, RF transistors, MOSFET tetrodes, sensors

II AF and switching transistors
III Darlington and high-voltage transistors, SIPMOS small-signal transistors
Group Package: SOT 89
RF and AF transistors, SIPMOS small-signal transistors
Group Package: SOT 223
Diodes; AF, Darlington and high-voltage transistors; SIPMOS small-signal

transistors
Thermal Resistance
Package Group
R 1hJL R1hLS R thsA RthJA 1)
SOT 23 I 355 K/W 30K/W 65K/W 450 K/W
SOT 143 II 280 K/W 30K/W 65K/W 375 K/W
III 255 K/W 30K/W 65K/W 350 K/W
SOT 89 I 20K/W 15K/W 90K/W 125K/W
SOT 223 I 10K/W 73.3 K/W 83.3 K/W
1) The data represents a typical value for the various component groups, which
relates to a uniform alumina substrate, 15 mm x 16.7 mm x 0.7 mm in size.
Siemens 23
Technicallnformatioh
In order to obtain a reduced thermal resistance, the PCB pad for the connection of the collector
is enlarged. This is particularly effective when epoxy PCBs with low heat conductivity are used.
Package sg;r 89 Package SOT 23, SOT 143

K
Iii
K
Iii ~
b
200 600
~
IL 'U
RthJA 190
JA ... ""
1.11'
....."
t 180 \
SOOt!
170 \ irt. "-
lfJ-- -
\
\ .........
160 ...... r-.
150
\ ~
140 \ .il"'"
:4
-~
130 I\,
.....
r.-.-- PC board _
120 i--
I-- - - PC board - - - Ceramic substrate
I---
110
- - - Ceramic substrate 1 I
1 1 I
100
I I J 200 I I
o 20 40 60 o 2 4 6 8mm 2
- Collector area
Generally, these specifications sltffi termine the junction temperature 7j.

The determination of the junct" ~ ure via the temperature dependence of the diode
path is more exact, however, ely complicated.
If it becomes nevertheless ne sa xactly determine the junction temperature 7j, the tem-
perature TL of the component conn ons has to be measured. Then 7j can be calculated by:
7j = TL + RthJL x Ptot
Methods for measuring the temperature at component connections

• Measuring with thermocouple element (e.g. Thermocoax)
For this method a miniature coated thermocouple element with low thermal capacitance is
used. The element, which is coated with a heat-conducting paste. is pressed against the
connection with the collector. There is hardly any influence on the device under measure-
ment and deviations do not exceed a few percent.
• Measuring with temperature indicators (e.g. thermopaper)
Temperature indicators do not cause heat dissipation and thus allow an almost exact deter-
mination of temperature. A certain degree of deviations can only result from the rough grade
indication of the temperature indicators. This method is quite easy and provides sufficient
accuracy. It is particularly suitable for measurement on PC boards.
24 Siemens
Quality Specifications
AQL values and definitions of defectives
Explanations
AQL (acceptable quality level) agreements specify the sampling conditions for the incoming in-
spection of consignments (conformance test). AQL values in conjunction with the standard
sampling inspection plans determine the acceptance or rejection of delivery lots. The size and
maximum permissible number of defects of the samples is based on DIN 40080 (identical with
MIL Standard 105 D and lEG 410), single sampling plan for normal inspection, inspection level II.
The sampling instructions of this standard are such that a delivery lot will most probably be ac-
cepted (> 90 0/0) if the defect percentage is equal or less than the specified AQL value. Gen-
erally, the average defect percentage of the products we deliver is far below the AQL value.
Definitions of defectives
A component is considered defective if it does not comply with the characteristics specified in
the data sheet or in an agreed upon delivery specification. Defectives can be divided into inop-
eratives, which generally exclude a functional application of the component, and defectives of
less significance.
Inoperatives are:
- open or short circuit,
- broken component, package, terminals or encapsulation,
- missing or incorrect marking, .
- incorrect identification of terminals,
- intermixing with other component types,
- alternating orientation in a packaging tube or tape.
The remaining defectives can be divided into:

- electrical defectives
(maximum ratings exceeded),
- mechanical defectives, e.g. dimensions not adhered to, package damaged, illegible marking,
bent leads.
Grouping into major defects and minor defects according to DIN 40080 has been purposely
avoided here because these terms are defined primarily on the basis of applications and not
specifications. In contrast to this the defective classes that we use - for which AQL values are
given below - are clearly outlined by the specification and the mentioned inoperatives.
AQL values
The AQL values valid for the different product families are comprised in the following table:
Type of defectives AQL values

Inoperatives (mechanical and electrical) 0.1
I: static defectives (dc) 0.4
I: dynamic defectives (ac) 1.5
I: mechanical defectives (package and connections) 0.4
for switching times and noise measurements an AQL of 1.5 applies.
Siemens 25
Incoming inspection
If the user wants to carry out an incoming inspection, the use of a sampling inspection plan is
recommended. The test method that is applied must be agreed upon between the user and the
supplier.
The following information is necessary for judging any claims that may arise: test circuit, sample
size, number of defective items found, sample of evidence, packing list.
Sampling plan for normal inspection

in accordance with DIN 40080 or ABC-Std 1050, inspection level II
AQL value
Lot size Sample 0,065 0,10 0,15 0,25 0,40 0,65 1,0 1,5 2,5 4,0 6,5
size
A R A R AR A R A R A R A R A R AR AR A R
2 to 8 2 01
+
9 to
16 to
15
25
3
5
1
1 i 01
01
I
~
26 to
51 to
91 to
50
90
150
8
13
20 01
01
01
I I 12
12
23
12
23
34
151 to
281 to
501 to
280
500
1200
32
50
80 01
i I
01
I 01
12
12
23
12
23
34
23
34
56
34
56
78
56
78
1011
1201 to
10001 to 35000
3200
3201 to 10000
125
200
315
01
•
I
01
I I 12
~
12
23
12
23
34
23
34
56
34
56
78
56
78
78 10 11 1415
10 11 1415 2122
1011 1415 2122
35001 to 150000 500

~ 12 23 34 56 78 10 11 1415 2122
150001 to 500000
500001 and more

800
1250
12
23
23
34
34
56
56
78
78 1011 1415 2122
1011 1415 2122

i ir
A = Acceptance number, i. e. maximum number of defectives in a sample up to which a lot is accepted.
R = Rejection number, i. e. the number of defectives which must be found in a sample as a minimum for re-
jection of the lot.
26 Siemens
Other conditions
As the combination "Acceptance O/Rejection 1" is not particularly clear, the next largest sam-
ple should be taken.
Additional information
Stating AQL values is no assurance of characteristics in a legal sense. The agreement of sam-
pling inspections and AQL values does not prevent the customer from carrying out more exten-
sive tests in incoming inspection and claiming replacements for individual defective compo-
nents under the terms of sale. Any further liability, especially as regards the consequences of
component defects, cannot be recognized.
Note
Siemens has made preparations for and is interested in making agreements on ppm values with
large-scale customers.
Siemens 27
Dimensional outlines
SOT 23 (TO 236)
rf~
MILLIMETERS INCHES
DIM. MIN . MAX. MIN. MAX.
.Ii
A 2.60 3.0 0.110 0.118
B 2.30 2.60 0.091 0.102
C 1.0 1.10 0.039 0.043
0 1.20 1.40 0.047 0.055
~. F 0.09 0.15 0.0035 0.0059
I-N G 0.38 0.48 0.015 0.019
L
H - - -
K 0 0.10 0 0.0039
L 1.84 1.98 0.072 o.on
SOT 23 N 0.92 0.98 0.038 0.039
SOT 143 (TO 253)

MILLIMETERS INCHES
f1 ,B
DIM. MIN. MAX. MIN. MAX.
N ~ F
A 2.80 3.0 0.110 0.118
B 0.091
~I '~~!
2.30 2.60 0.102
C 1.0 1.10 0.039 0.043
0 1.20 1.40 0.047 0.055
F 0.09 0.15 0.0035 0.0059 .
G 0.38 0.48 0.Q15 0.019
A-J
-Ie H 0.78 0.88 0.031 0.035
K 0 0.10 0 0.0039
L 1.84 1.96 0.072 0.077
SOT 143 N 1.60 1.60 0.063 0.071
~A_ SOT 89 (TO 243)
k
r-i
---jHJ-
1-11 icr DIM.

A
MILLIMETERS
MIN.
4.40
MAX.
4.60
MIN.
0.173
INCHES
MAX.
0.181
~
B 4.25 0.167
lIB C 1.40 1.60 0.55 0.63
G --l
rf[t--;~
II
0
F
G
-
0.25
0.40
2.60
0.39
0.65
-
0.016
0.102
0.0098 0.015
0.026
~ I-F
- NI--
I--l-
H
K
l
1.50
2.60
2.90
1.70
2.85
3.10
0.059
0.91
0.114
0.067
0.112
0.122
SOT 89 N 1.40 1.60 0.55 0.63
'~~r
SOD 123
I r G DIM.
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
~eJ ~~
A 2.55 2.85 0.100 0.112
B
C 0.95 1.35 0.037 0.053
0 1.40 1.70 0.055 0.067
~~:~
F - 0.15 - 0.0059
G 0.45 0.65 O.01n 0.0256
H 0.26 - 0.0098 -
~LF K
L
0
3.55
0.10
3.85
0
0.140
0.0039
0.152
SOD 123 N - - - -
r1~J IT! Ffr C l SOT 223

MILLIMETERS INCHES
P
DIM. MIN. MAX. MIN. MAX.
A 6.30 6.70 0.248 0.264
,DB C
B 6.80
1.50
7.20
1.70
0.268 0.283
0.059 0.067
~ ! ~.
lJ I
0
F
G
H
3.30
-
0.60
2.90
3.70
0.32
0.80
3.10
0.130 0.146
- 0.013
0.024 0.032
0.114 0.122
G~~L~ K~~
K 0 0.10 0 0.0039
L 4.60 Typ 0.182 Typ.
N 2.30 Typ. 0.091 Typ.
SOT 223
28 Siemens
Mounting Instructions
Supply for automatic assembly

In contrast to components with wire leads, practically all SMDs can be supplied in two package
forms:
• Bulk
• Tape
Bulk
The most straightforward and low-cost mode of SMD d\il!Jyery is in bulk, in either antistatic or
plastic containers. Contrary to components with wire I~~ds, SMDs can be supplied in this type
of packaging for automatic assembly as no bending orlriterlocking of terminals can occur. At
the placement machine the components are suitably,. pgsitioned. If required, a large quantity of
components can thus be supplied in line, i.e. without interrupting the placement procedure.
,(ih:' ,.'",,'
Bulk packaging units

Component Packing
Diodes
Transistors
Plastic container
LEDs
Sensors
MOSFETs, SIPMOS Antistatic contaiper
f.'F' l~~
'J",~':CI
Tape (in acc. with IEC 286-3) ~ (}

Tape packaging is a frequently useif9r":l 0t;;upplying surface mounted devices. The major ben-
efit of the tape method is that it Rreventji':\'Onfusion of different components and meets the re-
quirements of most placement ,~!,hin?~$'Cardboard and blister tapes are available tape forms.
rv.
The blister tape has preforme,it rom ., ? ents corresponding to the component sizE;!, which are
covered with fixing tape. 8Iist~i'<'4ap nsist either of plastic material or of plastic-clad alumi-
num foil.
The tapes are internationally standardized in accordance with DIN IEC 286·3. This ensures that the
tapes are accepted by all machines designed for this kind of assembly. The tape width is generally
between 8 mm and 12 mm but additional tape widths are at present being manufactured.
8mmtape
For packages SOT 23, SOT 143 and SOD 123
12 mmtape
For package SOT 89 and SOT 223
Tape packaging units
Size of reels Packages

SOT 23 SOT 143 SOT 89/S0T 223 SOD 123
18cm 3000 pieces 3000 pieces 1000 pieces 3000 pieces
33cm 10000 pieces 10000 pieces 2500 pieces 10000 pieces
Siemens 29
Blister tape
Ko
T
T,
Direction of unreeling
30 Siemens
TAPE PACKAGE
SYMBOL 8mm 12mm
SOT 23, SOT 143, SOD 123 SOT 89, SOT 223
AO • BO ') 3). KO ').
Do 1.5 + 0.1 1.5 + 0.1

D1 1 + 0.2 1.5mm
E 1.75 ± 0.1 1.75 ± 0.1
F 3.5 ± 0.05 5.5 ± 0.05
G 0.75 mm 4) 0.75mm
Po 4 ± 0.1 4 ± 0.1
P1 4 8
P2 2 ± 0.05 2 ± 0.05
S
T 0.3 max 0.3 max
T1 0.1 max 0.1 max
T2 1) 2) 2.5 max 4.5 max
W B±0.3 12 ± 0.3
W3 5.5 9.5
, ) The nominal dimension for component compartment shall be derived

from the relevant component specification.
. 2). The actual dimension Is given by the component height and the condition that the
component cannot be tumed.
3) Component has to tall out of the carrier tape compartment when the stili opened
carrier tape Is upside down. The maximum clearance Is 0.5 mm or given by the
maximal rotation angle allowed.
4) On long devices like 500.123. G could be smaller than 0.75 mm.
Siemens 31
Polarity and orientation of taped components
All polarized components are oriented in one direction. The mounting side is
oriented to the bottom side of the component compartment. The bottom side is
defined as the invisible side of the tape during unreeling.
000000000
SOT 23
[lj]1j] IIR RlRJ[jIR
000000000
SOT 89
000000000
SOT143 IIlIllIlMIIIIIIII
SOT 223
32 Siemens
Fixing of components
Components are prevented from falling out of the device compartment by a transparent fixing
tape.
Storage of tapes -S
A storage temperature of 40 + 5 °C at a relative humidity of ~ 950/0 is permissible up to a maxi-
mum of 240 h. q;
Break force of tape ;;::
The minimum break force of the tape in the direction of unreeling ;?:10 N.
Peel force of fixing tape ,,~
" 11"1.
During peel-off the angle between the fixing tape and the direction of unreeling is 180°. The peel
force of the fixing tape ranges from 0.2 N to 1.0 N.
V.;P .....::f
Break force of fixing tape l) If!

The minimum break force of the fixing tape iS~ N. 0
It::: .~s-force meter..... /
os ""
CfJ
Peel speed of fixing tape
Reel packaging
Component tapes are wound onto r as shown in the illustration below and are then suitable
for automatic assembly.
Currently available:
- Tape width=8 mm (SOT 23, SOT 143, Cross section
SOD 80) and 12 mm (SOT 89)
- Reel size=18 cm and 33 cm.
The reels are delivered in a protective wrapping.
Reel dimensions
DI· SOT 23 SOT 89 80T23 80T89
men- SOT 143 SOT 223 80T143 80T223
slon SOD 123 SOD 123
(mm)
a 8.4+ 1.5 12.4+ 1.5 8.4+ 1.5 12.4+1.5
a
b 180 max. 180 max. 330 max. 330 max.
c SO min. SO min. 100 min. 100 min.
d 14.4 max. 18.4 max. 14.4 max. 18.4 max.
Siemens 33
Reel Labelling
Each reel is labelled with manufacturer, type, series number, and date.
Missing components
A maximum of two consecutive components may be missin
o
~~ovided that this gap is followed
by six components. The number of empty places shall not e ed 0.25% of the total number of
components per reel. Upon request, other agreements
Leader and trailer

Carrier tape with fixing tape, without components
Tape leader T
min. 400 mm (100 pitches) (75 pitches)
DDD[][]DODDDBBB
ESD
SMDs can also be supplied on tapes protected against electrostatic charges. During process-
ing, the reel has therefore to be electrically connected with the placement machine, which must
be grounded. This method of taping complies with IECIT 640.
ESD ;;; Electrostatically Sensitive Devices
34 Siemens
PCB layout
When using surface mounted devices, the PCB layout has to be accommodated to
. this new technology. This demand should be fulfilled not only to better utilize
'the packing density, but also to meet the requirements resulting from the new
placement am;! processing system. Some factors influencing the PCB design are:
• Distance between conductor paths

• Component tolerances
• Distance between components
• Misalignment of component and conductor path
Recommended minimum solder pad dimensions (mm)
S00123 SOT 23 SOT 143
SOT 89 SOT 223
Siemens 35
Glueing
Prior to soldering, SMDs must be fixed to the PCB by means of an adhesive. The adhesive has
to fulfil the following conditions.
• Adequate adhesive strength
•
•
•
Short curing time at a low temperature
Uniform viscosity to ensure easy coating :t
No chemical reactions upon curing in order not to impai mponent and PC board
• Straightforward exchange of components in case of r
• As non-toxic, odorless and solvent-free as possible (/)
• Good thermal conductivity 4;
Connecting methods
The connecting method is particularly important ng good electrical connections as
well as for inhibiting short circuits. The choice method largely depends on the de-
sign of the PC boards (components on upper sides, multilayer board), on the sup-
plied components and on the production fa (b
In addition to manual soldering, which is onl for repairs, there are two automated sol-
dering methods: flow soldering, which incl drag and dip soldering, and reflow solder-
ing.
Wave soldering
Wave soldering is the most widely u ated solder method in the manufacture of PCB
assemblies.
With a maximum bath temperature the soldering time should not exceed 8 s. Prior to
the wave the flux is applied by a
Solder bridges and solder sh Max. perm. temperature stress on the
cur if the components ar SMD (soldering without preheating)
packed on the wave soldering Sl ere- O(
fore, with respect to soldering, the compo- 300
nent arrangement has to be considered in the
I I
PCB layout. T I/'" \ I
Dual wave soldering equipment will in general I- Soldering\ Cooling
be better suited to SMD methods. The first
turbulent wave of solder ensures good wet- t 200 I
.1
ting of all metallization areas, while the sec- \ Ts
ond more laminar wave removes the excess
solder (solder accumUlation and solder
bridges).
100
o
o 10 20 30 s
-f
Ts = Melting point of the solder
36 Siemens
Reflow soldering
For reflow soldering a specific amount of solder, e.g. in the form of solder paste, is applied to
the mounting pads. After the SMD has been placed the connection is established by one of the
following methods:
• Vapor phase soldering
• Hot gas soldering '~'v
• Heated collet ~oldering ,.,:;~~J
• Infrared soldering \~",;,
The most recent reflow soldering method is vapor Pha!i!;I'l~Oldering, where the entire assembly
is uniformly heated to a specific temperature. This form"'Of soldering is a very gentle process,
since it prevents overheating. At present, it is the b ., Idering method for densely positioned
components of different thermal capacity.
Max. perm. temperature stress on the SMD

(soldering with preheating)
°C
300 ~~~~~~~~~~~
t200 1-+-l-+-+-II...f-.jI-+-l-+-+-¥-+-l-
100 I-I+-l-+-+--l-+-+-I-+-+-I-+-,j~
Preheating
o ~-L~~-L~~-L~~_~
o m ~ ~s
-t
Iron soldering
Soldering with a temperature-controlled miniature iron should be used only in exceptional
cases (e.g. repairs), since as well as being uneconomical there is the risk of damage to the
components and to the PCB.
Soldering flux
• The soldering flux used for wave soldering is not subject to changes, i.e. use of collophony
(F-SW 32 in acc. with DIN 8511).
• On the other hand, the majority of soldering pastes necessary for reflow soldering contains
aggressive soldering flux, the residues of which must always be removed by cleaning.
Siemens 37
....
-
PCB cleaning
• Cleaning in solvents is permitted at approx. 70°C to 80 °C for about 15 seconds, Detailed In-
formation is available upon request.
• Ultrasonic cleaning (double half-wave operation) 0
Ultrasonic cleaning is less advisable; should it, however,1i used, the following has to be
taken into account: ~
Cleaning agent: Isopropanol, Freor-/!!
8ath temperature: approx.30°C 0
Duration of cleaning: max. 30 s 4;
Ultrasonic frequency: 40 kHz
Ultrasonic changing pressure: approx, 0.5 b~ 0
Evaluation of solder joints
View of the concave tin area
Defective solder JOints ~

·s
(j
1~~'§ lO I~~~~~~~
Height of tin surface L1 ~ 2 X L2
.:;1 ~~~~~~ -'"j

Height of tin surface L1 SO,S L2
SMD
Unwetted pad area S > 50/0
38 Siemens
Diodes
Siemens 39
Silicon RF Switching Diode SA 582
c.t~
• Low-loss VHF band switch for TVNTR tuners
Type Marking Ordering code Package

(taped)
BA582 bluetS Q62702-A829 SOD-123
Maximum Ratings
Parameter Symbol Value Unit
Reverse voltage VR 35 V
Forward current, TA :s 60 ° C IF 100 mA
Operation temperature range Top -55... + 125 °C
Storage temperature range Tstg -55 ... + 150 °C
Thermal Resistance
Junction - ambient I
RthJAtyP·1 600 IKIW
Siemens 41
BA 582
Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Ratings Unit
min. typo max.
Forward voltage VF v
IF= 100 mA - - 1
Reverse current ~R nA
VR=20 V - - 20
Diode capacitance Cr pF
f= 1 MHz
VR=1 V - 0.92 1.4
VR=3 V 0.6 0.85 1.1
Forward resistance 'f n
f= 100 MHz
IF=3 mA - 0.55 0.7
'F = 10 mA - 0.36 0.5
Reverse resistance 11gp kn
f= 100 MHz
VR=1 V - 100 -
Series inductance Ls - 2.8 - nH
42 Siemens
Silicon PIN Diode BA 585
c.t~
• Current-controlled RF resistor for RF attenuators
• Frequency range 1 MHz ...2 GHz

(taped)
BA 585 white/R. Q62702-A859 SOO-123
Maximum Ratings
Forward current IF 50 mA
Operation temperature range Top -55 ... + 125 ·C
Storage temperature range T stg -55 ... +150 ·C
Thermal Resistance
Junction - ambient IRthJA I
S 450 IKIW
Siemens 43
BAS8S
at TA =25 ·C, unless otherwise specified.
min. typo max.
Forward voltage VF V
IF=50 rnA - - 1.1
Reverse current IR nA
VR=30 V - - 50
Diode capacitance CT pF
f= 1 MHz, VR = 10 V - 0.28 0.6
f= 100 MHz, VR =0 V - 0.23 0.4
Forward resistance 'f n
f=100 MHz
IF=1.5 rnA - 22 40
IF= 10 rnA - 5 7
Zero bias conductance gp pS
f= 100 MHz, VR =0 V - 70 -
Series inductance Ls - 2.8 - nH
Diode capacitance CT = f (VR) Forward resistance 'f = f (IF)

f=1 MHzlf=100 MHz f= 100 MHz
1,0
pF
[T 0,8 r\.
L 5
\
\..
0,4 \ [\
'
r--. ....
.... f = 1 MHz-
I I 1 5
0,2
f i 1,00, MrZ
o 10 20 V 30 -
- - - - IF
44 Siemens
Silicon PIN Diode BA 885
c{J.
• Current-controlled RF resistor
for RF attenuators
• Frequency range:
1 MHz ... 2 GHz
• Especially useful
as antenna switch
in TV-sat tuners
Type BA 885
Ordering code bulk: Q62702-A742 taped: Q62702-A608
Marking PA
Maximum ratings
Operating temperature range Top -55 ... +125 °C
Storage temperature range Tstg -55 ... +150 °C
Thermal resistance
Junction - ambient RthJA I :5450 I KIWI)
I) Package mounted on alumina 16.7 mm x 15 mm x 0.7 mm.
Siemens 45
BASS5
Characteristics (TA = 25°C)

min typ max
Forward voltage VF 1.1 V
/F= 50 rnA
Reverse current IR 50 nA
VR = 30V
Diode capacitance CT
VR = 10V,f= 1 MHz 0.28 0.6 pF
OV, 100 MHz 0.23 0.4 pF
Forward resistance, f = 100 MHz rf
/F= 1.5 rnA 22 40 Q
10 rnA 5 7 Q
Zero bias conductance gp 70 (.IS

VR = 0, f= 100 MHz
Series inductance Ls 2 nH
Diode capacitance CT = f (VRI Forward resistance rf = f (hI

f= 1 MHz/100 MHz f=100 MHz
pF Q
1.0 103
i f\.
'~
0.6
5
'\.
0.4 \
r\
r-- .... 10'
f=lMHz-
~r-.. 5
0.2
f=llfilt
o 10 lOV
46 Siemens
Silicon Switching Diode BAL74
• For high-speed switching
Type Marking Ordering code Ordering code for Package

for versions in bulk versions on 8 mm-tape
o SAL 74 JC Q62702-A614 Q62702-A718 SOT 23
Maximum ratings
Peak reverse voltage VRM 50 V
Forward current h 250 mA
Peak forward current hM 250 mA
Surge forward current hs 4,5 A
t= 1 !is
Total power dissipation Ptot 330 mW
TA= 25°C
Junction temperature Tj 175 °C
Storage temperature range Tstg -65···+150 °C
Thermal resistance RthJA :0; 450 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
o Preferred type
Siemens 47
BAL 74
Electrical characteristics
at TA = 25°C, unless otherwise specified
DC characteristics Symbol min typ max Unit

Breakdown voltage V(BR) 50 - - V
I(BR) = 100 I-1A
Forward voltage VF - - 1 V
IF = 100 mA
Reverse current IR
VR = 50V - - 0,1 I-1A
VR=50V, TA=150°C - - 100 I-1A
AC characteristics Symbol min typ max Unit

Diode capacitance Co - - 2 pF
VR=OV,f=1 MHz
Reverse recovery time trr - - 4 ns
IF = 10 mA, IR = 10 mA,
RL= 100n,
measured at I R = 1 mA
Test circuit for reverse recovery time
OUT
Pulse generator: tp = 100 ns, D = 0,05 Oscilloscope: R = 50 n

t, = 0,6 ns, Ri = son t, = 0,35 ns
C:5 1 pF
48 Siemens
BAL74
Total power dissipation Ptot = f (TA) Reverse current fA = f( TA)
rnW nA
400 105
VR~70V
1'\
V ~
max.
70~//
200
5
1,\
I'. 25V
100
:\.
5
typo
1/
o 10t [I
o so 100 150 200 °c o 50 100 150 0(
-7;. -li,
Forward current IF = f (VF) Peak forward current lFM = f(t)

TA = 25°C TA =25°C
rnA
150
I I/D~0005
5 0.01
0.02
V~05
II i/rll
0.2
100 I
typo I max.
~
i
;
50
1
i
Ii f~
D=.J...
T
T
o V 10-2 II 11111 I 1111 I I
o 0,5 1,5 V 10-6 10-5 10-4 10- 3 10-1 10-1 10° 5
-f
Siemens 49
BAL74
Forward voltage VF = f (TA)
V
1,0
-HJ I-r-.
IF =100 rnA
I I -1-1-
f W
10 rnA ............
I'-r-.
0,5
in} . . . 1'-...... 1'-
r-
-
~
0,1 rnA
I'-
i'r- I'-
"r--,
..... "'"
o
o 50 100 150 0(
50 Siemens
Silicon Switching Diode BAL99

BAL99 JF Q62702-A611 Q62702-A687 SOT 23
Maximum ratings
Peak forward current IFM 250 mA
Surge forward current IFs 4,5 A
t= 111s
TA = 25°C
Thermal resistance RthJA 5450 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 51
BAL99

Breakdown voltage V(BA) 70 - - V
I(BA) = 100 f!A
Forward voltage VF
IF= 1 mA - - 715 mV
IF= 10mA - - 855 mV
IF= 50mA - - 1 V
IF=150mA - - 1,25 V
Reverse current IA
VA = 70V - - 2,5 f!A
VA = 25 V, TA = 150°C - - 30 f!A
VA = 70 V, TA = 150°C - - 50 f!A

Diode capacitance CD - - 1,5 pF
VA = 0 V, f = 1 MHz
IF = 10 mA, IA = 10 mA,
RL=100n,
measured at I A = 1 mA
OUT

tr = 0,6 ns, Ri = 50 n tr = 0,35 ns
C :5 1 pF
52 Siemens
BAL99
Total power dissipation P'o' = ((TA) Reverse current I R = f (TA)

mW nA
400 105
VR =70V
V V
max.
70~/J
200
25V
I' r\
100
typo
IlL
o 10' J
o 50 100 150 200 'C o 50 150 O(
Forward current IF = ((V F) Peak forward current I FM = f (t)

TA= 25°C TA = 25°C
mA
150
I 0=0.005
0.01
IF 0.02
I 100 I
/ V~05
0.1
0.2 :=1=
typo Ij max. ....
,.::)(
Ii
50
Ii ~
,
1
i 0=-.2..
T t~ T
o i..-' ./
10-1 Illil 1111 I lULL!
o 0,5 1,0 1,5 V 10-6 10-5 10- 4 W-l 10-1 10-1 10° S
-VF -t
Siemens 53
BAL99
Forward voltage VF = {(TAl

V
1,0
ill
I F = 100mA r-
I I r-r-r-
W.
10 mA
L _1
r--.
r--,
0,5
~, I
rr-
I i'-k 'r--.
0,1 mA
r--. . . . . ,
I
r--r-.,
I
o
o 50 150 .(
54 Siemens
Silicon PIN Diodes BAR 14-1
... BAR 16-1
• RF switch, RF attenuator
• Low-distortion factor
• Long-term stability of electrical characteristics
Type Marking Ordering code Pin configuration Package

(tape and reel)
BAR 14-1 L7 Q 62702 - A772 3 SOT-23
10 ~I I ~I 02
BAR 15-1 La Q 62702-A731 3
10 ~ I I~ 02
BAR 16-1 L9 Q 62702-A773 3
10 ~ I ~ 02
Maximum Ratings per Diode
Parameter Symbol Values Unit
Forward current IF 100 rnA
Total power dissipation, TA = 25 °C2) Ptot 140 mW
Junction temperature 7j 150 °c
Operating temperature range Top -55 ... +150 °c
Storage temperature range Tstg -55 ... +150 °c
Thermal Resistance
Junction - ambient 1 I RthJA I 5450 IKIW
1) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm.
Siemens 55
BAR 14-1
... BAR 16-1
Electrical Characteristics per Diode

min typ max
Reverse current IR
VR = 50V - - 100 nA
VR = 100V - - 1 J,tA
Forward voltage VF - 1.05 1.25 V
I F=100 mA
Diode capacitance Or pF
VR =50V, f= 1 MHz - 0.25 0.5
VR = 0, f= 100 MHz - 0.2 -
Forward resistance Ii Q
f= 100 MHz, IF = 0.01 rnA - 2800 -
IF = 0.10 rnA - 380 -
I F = 1 rnA - 45 -
I F = 10 rnA - 7 -
Zero bias conductance gp - 50 - IlS
VR = 0, f= 100 MHz
Charge carrier life time 'L 0.7 1 - Ils
I F =10mA,IR =6mA
Forward resistance rf = f (IF)

f= 100 MHz
rf
1,/ I r,. =lS00(

85°( '§
25°( ;=
t
_400( i=
./ '\
ltV III
5 '\.
10'1 J II I W
S 5
I II
0.5 1.0 1.5 V 0.1 1.0 10 SOmA
-~
56 Siemens
BAR 14-1
... BAR 16-1
Diode capacitance Cr = f (VR)
pF
1.0
0.5
\ .......
-
r- QMHf
f=11
00JH; l""- I""- -
o
o 10 20 30 40 SOY
-VR
Siemens 57
Silicon PIN Diodes. BAR 17
• Current-controlled RF resistor for RF attenuation

• Switching applications above 1 MHz

(tape and reel)
BAR 17 L6 Q 62702 - A785 10 ~ 03 SOT-23
Maximum Ratings
Total power dissipation, TA = 25 °C2) P tot 140 mW
Operating temperature range Top -55 ... +150 °c
Thermal Resistance
Junction - ambient I I RthJA I :5450 IKIW
58 Siemens
BAR 17
DC/AC Characteristics
min typ max
Reverse current IR
VR = 50V - - 50 nA
VR =100V - - 1 I!A
Forward voltage VF - 0.91 1 V
I F= 100 mA
VR = 50 V, f = 1 MHz - 0.32 0.55
VR = 0., f= 100 MHz - 0.37 -
Charge carrier life time 'lL - 4 - ~s
IF = 10 mA, IR = 6 mA
Forward resistance Ii n
f= 100 MHz, IF = 0.01 mA - 1150 -
IF=0.1 mA - 160 -
I F= 1.0mA - 23 -
I F= 10mA - 3.5 -
Forward currentlF =f (VF) Forward resistance rf = f (IF)

f= 100 MHz
II
T,.=-400(
25°(
==
85°( ===
W-
1500 (=
I I\.
1\
I I
II
I I II 10°
0.5 1.0 1.5 V 10- 2 5 10-' 5 10° 5 10'
-Vf -IF
Siemens 59
BAR 17
pF
2
1\
1"-.. t--... f = 1MHz
I'::
100Mr
1
o
o 10 20 30 40 sov
-VR
60 Siemens
Silicon PIN Diodes BAR 60
BAR 61
3i~2
• For RF attenuation
• Switching applications for frequencies above 10 MHz
4tlJ) 1
(tape and reel)
BAR 60 60 Q 62702 - A786
,+, 1
2
SOT-143
BAR 61 61 Q 62702-A120 01
30 1>1

Parameter
* *
Symbol
2
Values
4
Unit
Total power dissipation, TA = 25 °C 2) Ptot 140 mW
Thermal Resistance
Junction - ambient 1. RthJA 1::0;450 KIW
Siemens 61
BAR 60
BAR 61

DC/AC Characteristics
min typ max
Reverse current IR
VR = 50V - - 100 nA
VR = 100V - - 1 ~
Forward voltage VF - - 1.25 V
I F = 100 mA
VR =50V, f= 1 MHz - 0.25 0.5
VR = 0, f= 100 MHz - 0.2 -
Differential forward resistance
f= 100 MHz, IF = 0.01 mA
'f - 2800 -
n
IF=0.1 mA - 380 -
I F = 1.0 mA - 45 -
I F = 10mA - 7 -
Zero bias conductance gp - 50 - J.lS
VR = 0, f= 100 MHz
Charge carrier life time !L - 1 - J.ls
I F =10mA,IR =6mA
Forward current h = f (VF) Forward resistance 'f = f (IF)

f= 100MHz
1
II I ~;.1500[
85°[ E
25°[ f=
_400[ 1=
10
0 1/ II I "
5 5
1 I I W
5
2
IJ I I
0.5 1.0 1.SV 0.1 1.0 10 SOmA
-~
62 Siemens
BAR 60
BAR 61
pF
1.0
0.5
1\ r--...
- I - QMH r
f~1100JHZ l -I -i--
o
o 10 20 30 40 50 V
Circuit example for attenuation networks with diode BAR 60
I 1nF I 1nF
1kn 1kn
1nF
Input >--1t--.--o.---+cI7l--t---lE++--<>---<"'--+---I'K Output
I I
I
5.6kn IL __ __-.1 4.7kn
r 1nF
50kn
Siemens 63
BAR 60
BAR 61
Circuit example for attenuation networks with diode BAR 61
SOk!!
f--I:z:l------.-o+12V
lnF
H
I 1nF
BC 236
lk!! BAR 61
r------~
1k!!
lnF
I 1nF
I I
Input )-U-....-<>-+-+--lE'I--........-+-o--+-.......--~I---+---{ Output
lnF
I
I
L
1.6k!!
2.2kn
64 Siemens
Silicon Switching Diode BAR 74
c{ff:
o BAR 74 JB Q62702-A615 Q62702-A704 SOT 23
Maximum ratings
Forward current /P 250 mA
Peak forward current /PM 250 mA
Surge forward current /Ps 4,5 A
t= 1 ~s
TA = 25°C
Thermal resistance RthJA ::; 450 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
o Preferred type
Siemens 65
BAR 74

I(BR) = 100 itA
IF = 100 rnA
Reverse current IR
VR = 50V - - 0,1 ItA
VR = 50 V, TA = 150°C - - 100 ItA

Oiode capacitance Co - - 2 pF
VR = OV, f=1 MHz
IF = 10 rnA, IR = 10 rnA,
RL= 1000,
measured at I R = 1 rnA
OUT
Pulse generator: tp = 100 ns, 0 = 0,05 Oscilloscope: R = 500

tr = 0,6 ns, Ri = 500 tr = 0,35 ns
C::;; 1 pF
66 Siemens
BAR 74
Total power dissipation P'o' = f (TA) Reverse current I R = f ( TA)
rnW nA
400 101
VR =70V
1\ // V
max.
70~1/
200
25V
r-..
100
typo
/1/
o 10' IJ
o 50 100 150 200 ·C o 50 100 150 O(
-T"
Forward current iF = f (VF) Peak forward current lFM = f (t)

TA = 25'C TA = 25'C
rnA
150
I 0=0005
5 0.01
0.02
/ V~05
0.1
0.2
100 I
typo j max.
)(
Ii
50
,
J
i O=-L
t~
T
T
V / 111111111 I IIII I I
o 10- 2
o 0,5 1,5 V 10- 6 10-5 10- 4 10- 3 10- 2 10-' 10° 5
-t
Siemens 67
BAR 74
Forward voltage VF = f ( TA)
V
1,0
ill l-
IF=10~~A I-
f CI
10 mA
~r--
" "r-- . . .
0,5
1-1-
"'N::
O.1mA
r--" I'--
t--..r-- t-... j-..
j-..~
o
o 50 150 ·C
68 Siemens
Silicon Switching Diode BAR 99

BAR 99 JG Q62702-A610 Q62702-A388 SOT 23
Maximum ratings
Forward current iF 250 mA
Peak forward current iFM 250 mA
Surge forward current iFs 4,5 A
t= 1 its
TA = 25 DC
Junction temperature Tj 175 DC
Storage temperature range Tstg -65··· + 150 DC
Thermal resistance RthJA ::5 450 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 69
BAR 99

I(BR) = 100!lA
Forward voltage VF
IF= 1 mA - - 715 mV
IF= 10mA - - 855 mV
IF= 50mA - - 1000 mV
IF=150mA - - 1250 mV
Reverse current IR
VR = 70V - - 2,5 ).LA
VR = 25 V, TA = 150°C - - 30 ).LA
VR = 70 V, TA = 150°C - - 50 ).LA

Diode capacitance Co - - 1,5 pF
VR=OV,f=1MHz
IF = 10 mA, IR = 10 mA,
RL= 100n,
OUT
Pulse generator: tp = 100 ns, 0 = 0,05 Oscilloscope: R = 50 n

tr = 0,6 ns, Ri = 50n tr = 0,35 ns
C:5 1 pF
70 Siemens
BAR 99
Total power dissipation P tot = f (TA) Reverse current I R = f (TA)

mIN nA
400 105
VR =70V
V V
max.
i-' /1/
7OV/
200
5
25V
100 1\
1\
typo
11/
I
o 10'
o 50 100 150 200 ·C a 50 100 150 .(
-TA
Forward current IF = f (VF) Peak forward current IFM = f (t)

TA = 25°C TA = 25°C
mA
150
I 1/0= 0005
5 0.01
0.02
V~05
I
rl0.21 tl=
100
typo I max.
I"'>
ii
ii
50
1
I
i D=~
t~
T
T
o
l/
10-
, 1IJIII11LIlIlili
o 0,5 1,0 1,5 V 10-6 10-5 10- 4 10- 3 10-' 10-' 10° s
-V, -t
Siemens 71
BAR 99
V
1,0
W r--t- I-~
I F=10~~A
-I--.
U
10 mA t--r--
r--t--
1'--1'--1'--
0,5 1;j;-"
1-1-
't-l
O,lmA
""-I'--I'--
I'--
1'--"
1'01'0
o
o 50 100 150 0(
-TA
72 .Siemens
Silicon Switching Diode BAS 16
ell.
Type Marking Ordering code for Ordering code for Package

versions in bulk versions on 8 mm-tape
BAS 16 A6 Q62702-A726 Q62702-A739 SOT 23
Maximum ratings
t= 1 ~s
TA = 25°C
Storage temperature range Tstg -65··· +150 °C
Thermal resistance RthJA ~450 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 73
BAS 16
at TA = 25 ce, unless otherwise specified

f (BR) = 100 J.lA
Forward voltage VF
iF= 1 mA - - 715 mV
iF= 10 mA - - 855 mV
if = 50 mA - - 1000 mV
if =150 mA - - 1250 mV
Reverse current fR
VR = 75 V - - 1 J.l.A
VR = 25 V, TA = 150 c e - - 30 J.l.A
VR = 75 V, TA = 150 c e - - 50 J.l.A
Forward recovery voltage VI, - - 1,75 V
if = 10 mA, tp = 20 ns

VR = 0 V, f= 1 MHz
Reverse recovery time t" - - 6 ns
if = 10 mA, fR = 10 mA,
RL = 100n,
measured at f R = 1 mA
OUT

t, = 0,6 ns, Ri = 50 n t, = 0,35 ns
C 51 pF
74 Siemens
BAS 16
Total power dissipation Ptot = f( TA) Reverse current I R = f ( TA)

mW nA
400 105
VR =70V
~
,/
~
max.
r-'
70~J /
200
5
25V
100
1\
1\
5
typo
1/
o lot 11.1
o 50 100 150 200 ·C o 50 150 DC
Forward current if = f(VF) Peak forward current iFM = fIt)

TA = 25°C TA =25°C
mA
150
I 5
I/ D=0005
0.01
IFH 0.02
[!~05
t 10' rl0.21
100 J 5
typo II max. ... [")
i
50 ~
,
I
i D=.J..
T t~ T
o i..-' 1/
10- , IIIIII 1111 I 1111 I I
o 0,5 1,5 V 10-6 10- 5 10- 4 10- 3 10-' 10-' 100 5
-t
Siemens 75
BAS 16

V
1,0
1TI I-I-r-.
IF=10~~A
I-
. ..1
1-...
~ m,A 1-1-
;;}I- t-.r-.
0,5
r:( I-
...
f-f- O,1mA
1--.1- !'.ro-.
. . . 1-
o
o 50 150 O(
76 Siemens
Silicon Switching Diodes BAS 19
... BAS 21
• High-speed, high-voltage switch

BAS 19 JP Q62702-A242 Q62702-A95 SOT 23
BAS 20 JR Q62702-A707 Q62702-A 113 SOT 23
BAS 21 JS Q62702-A708 Q62702-A79 SOT 23
Maximum ratings
Parameter Symbol BAS 19 BAS 20 BAS 21 Unit
Reverse voltage VR 100 150 200 V
Peak reverse voltage VRM 120 200 250 V
TA = 25°C
Storage temperature range T stg -65 .. ·+150 °C
Thermal resistance RthJA :5 450 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 77
BAS 19
... BAS 21

Breakdown voltage ') V(SR)
I(SR) = 100 IlA
BAS 19 120 - - V
BAS 20 200 - - V
BAS 21 250 - - V
Forward voltage VF
IF =100 mA - - 1 V
IF =200 mA - - 1,25 V
Reverse current IR
VR = VRmax - - 100 nA
VR = VRmax; Tj = 150°C - - 100 IlA

VR=OV,f=1 MHz
IF = 30 mA, IR = 30 mA,
RL= 100n,
measured at IR = 3 mA
OUT

tr = 0,6 ns, Ri = 50 n tr = 0,35 ns
C:5 1 pF
') Pulse test: tp :5 300 Ils, D = 20/0.
78 Siemens
BAS 19
... BAS 21
Total power dissipation Ptot = f (TA) Raverse current I R = f ( TA)

rnW )JA
400 10 2
5
~ot
I 300
V /
/ 1/
"\ max. 1I Ityp.
200
1'\
I\.
IJ
100 IJ
\
1"\ I
o 1"\
o 50 100 150 O( 50
-TA
Forward current IF = f ( VFl Forward voltage VF = f(TA)
rnA V
800 1,5
r:
I I I
IF =625mA
v" - /, I .
I,
II f --- 250mA
500
I
1,0
....
~A
~
-- r-
-
400 I I
I ........
k 10mA
300
0,5 r-...
.......
200 I
100 I
o o
o 0.5 1.0 1.5 V o 100 200°C
-VF -TA
Siemens 79
BAS 19
... BAS 21
Forward current IF = f ( TA) Reverse voltage VR = f( TA)
rnA V
300 300
IF
BAS 21
200 200
"- f'\
. . .+- B~s12
,
~
I\.
1\
100
t\.
100
BA519
,
'\ 1\
[\ \
1\
1\ o
,
°° 50
-TA
100 150 0 ( o 50
-1A
100
Peak forward current lFM = f (t)
D= 0.005:
VO.0 1
VO.0 2
1:/,0.05
0.1
>0.2
I"- ~~
10°
.. ..
1
Ii I i
D =--E.
t"T -_
1:f1-
fpl--
10-2 1m I ~~ 1I11 II
10-6 10-5 10-' 10-3 10-2 10- 1 10° S
-f
80 Siemens
Silicon Switching Diode Array BAS 28

• Electrically isolated diodes
A2~C2
A1~C1
BAS 28 JT Q62702-A 163 Q62702-A77 SOT 143
Maximum ratings
Peak forward current lFM 250 mA
Surge forward current lFs 4,5 A
f=1lls
TA = 25°C
Thermal resistance RthJA :::;450 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 81
BAS 28

Breakdown voltage V(BA) 85 - - V
I(BA) = 100 llA
Forward voltage VF
h= 1 mA - - 715 mV
h= 10 mA - - 855 mV
h= 50mA - - 1000 mV
h =150 mA - - 1250 mV
Reverse current IA
VA = 75V - - 1 l1A
VA = 25 V, TA = 150°C - - 30 l1A
VA = 75 V, TA = 150°C - - 50 llA

VA=OV,f=1MHz
h = 10 mA, IA = 10 mA,
RL= 100n,
measured at IA = 1 mA
OUT

tr = 0,6 ns, Ri = 50 n tr = 0,35 ns
C:s 1 pF
82 Siemens
BAS 28
Total power dissipation Ptot = f (TA) Reverse current I R = f ( TA)

mW nA
400 105
5
VR =70V
~
V I"
j"3oo
max.
f-" 1/
70~/1/
200
5
25V
V
100
1\
1\ typo
o /1/
o so 100 150 200 'C 50 150 0(
Forward current IF = f (VF) Peak forward current iFM = f (t)

TA = 25°C TA= 25°C
rnA A
150 10 2
I 0=0.005
5 0.01
0.02
rl0 5
/ 0.1
0.2
100 I
typo If max. r-
..,.'/0
i
50
Ii
1
J
i t~
0=....1'.-
T
T
o
Vl/
10-2 IIII I IIII I 1111 I L
o 0,5 1,5 V 10-6 10- 5 10- 4 10- 3 10- 2 10-1 10° S
-t
Siemens 83
BAS 28
Forward voltage VF = '(TAl

V
1,0
ill
I F=100 mA
I I 1-1-
f ~~
10 mA l"'-
I'--
0,5
~I"'- 1-1-....
.~ 1'-- ....
t'--
-r- ~ O,lmA
....
t'--r--,
..... r--.
o
o 50 150 °C
84 Siemens
Silicon Schottky Diodes BAS 40 ...
• General-purpose diodes for high-speed switching

• Circuit protection
• Voltage clamping
• High-level detecting and mixing
:5 - available with CECC quality assessment
ESO: Electrostatic discharge sensitive device, observe handling precautions!

(tape and reel)
:5 BAS 40 43 Q 62702 - 0339 SOT-23
10 ~ 03
:5 BAS 40-04 44 Q 62702 - 0980 3

10 ~I~ 02
:5 BAS 40-05 45 Q 62702 - 0979 3
10 ~ I I~ 02
:5 BAS 40-06 46 Q 62702 - 0978 3
101E;JI~ 02
•
•
•
General-purpose diodes for high-speed switching
Circuit protection
Voltage clamping 3/7h2
:5 - available with CECC quality assessment

4t$J1
(tape and reel)
:5 BAS 40-07 47 Q 62702 - A697 SOT-143
40 [>1 01
30 ~ 02
Siemens 85
BAS 40 •••

Peak forward current IFRM 80 mA
Surge forward current, t ~1 0 ms I FSM 200 mA
Junction temperature Ii 150 °C
Thermal Resistance
Junction - ambient1) I RthJA I ~450 IKIW
Parameter I Symbol Values
I typ I max
I Unit
DC characteristics
Breakdown voltage "'<SR) 40 - - V
IR = 10 J.tA
Reverse current IR J.tA
VR;=30V - - 1
VR =40V - - 10
Forward voltage VF mV
I F = 1 mA - 310 380
I F = 10 mA - 450 500
I F =40mA - 720 1000
Diode capacitance c,. pF
VR=O, f=1 MHz - 4 5
Charge carrier life time t - - 100 ps
IF=25mA
Differential forward resistance Ij - 10 - n
I F = 10 mA, f= 10 kHz
86 Siemens
BAS 40 ...
Characteristics per Diode

rnA Forward currenth =f (VF) ~A Reverse current IR = f (VR)
1Q2 103
5
5
IF
~,
. ~5=00(=
t 10 1
5
r,. =_400(
J fI- "'- 25°(
10°
5
I-- 85 0 (
1500(
-- r--
f-- 85°(-
10-1
-
5
10-2
0 0.5
-Yf
1.0 1.5 V - ,......
10 20
25°f=
40 V
Diode capacitance Or = f (VR) Differential forward resistance rf = f (h)

f= 1 MHz f= 10 kHz
pF
5
4 \
\
3
\ "'
~
I'j'-. 5
o
o 10 30 V 0.5 1 100mA
Siemens 87
Silicon Schottky Diodes BAS 70 ...

• Circuit protection
• Voltage clamping
E - available with CECC quality assessment

(tape and reel)
Ii BAS 70 73 Q 62702 -A11B SOT-23
10 ~ 03
E BAS 70-04 74 Q 62702 -A730 3

10 ~ I~ 02
E BAS 70-05 75 Q 62702-A711 3
10 ~ 1~ 02
E BAS 70-06 76 Q 62702-A774 3
10 ~ I ~02
•
•
Circuit protection
Voltage clamping 3171w2
E - available with CECC quality assessment 4tJfJ 1

"tYpe Marking Ordering code Pin configuration Package1)
(tape and reel)
Ii BAS 70-07 77 Q 62702 - A846 40 E>I 01 SOT-143
30 E>I 02
88 Siemens
BAS 70 ...

Peak forward current IFRM 40 mA
Surge forward current, t s1 0 ms I FSM 100 mA
Junction temperature 7j 150 °C
Thermal Resistance
Junction - ambient1) RthJA s450 IKIW
Parameter Unit
DC characteristics
Breakdown voltage V(SR) 70 - - V
IR = 10 IlA
Reverse current IR IlA
VR =50V - - 0.1
VR =70V - - 10
I F= 1 mA - 380 410
I F= 10mA - 690 750
I F= 15 mA - 780 1000
Diode capacitance Or - 1.6 2 pF
VR=O, f= 1 MHz
Charge carrier life time '! - - 100 ps
I F =25mA
Differential forward resistance Ij - 30 - n

IF = 10 mA, f= 10 kHz
Siemens 89
BAS 70 ...
Characteristics per Diode

at TA = 25 °C, unless otherwise specified.
rnA Forward currentIF = f (VF)
~A
Reverse currentIR =f (VR)
102 102
IF
5
AI II~
~
Ii ':'
5
... - 7;.=150,,\
tW 5
100
II
II I-- 1A=-400 (
25 0 ( -I--
- I-- 85°(
5 85°( _I--
"""150 0 (-1-- =
10- 1 -25°(
~
1/
5
10- 2
0 0.5 1.0 1.5 V 20 40 80 V
-VF
Diode capacitance c;. =f (VR) Differential forward resistance rf = f (IF)

f= 1 MHz f= 10 kHz
pF
2.0
5
1.0 ~
\
"\ , 10 1
1\
0.5
I""..
-- -
5
o 10 0
o 10 20 30 40 50 60 70 80 V 0.1 0.5 1 5 10 5 100mA
-VR
90 Siemens
Silicon Switching Diodes BAS 78A ... BAS 78D
• Switching applications
• High breakdown voltage
Type Marking Ordering code (12-mm tape) Package'

BAS 78A BAS 78A 062702 - A910 SOT -223
BAS 78B BAS 78B 062702 - A911 SOT-223
BAS 78C BAS 78C 062702 - A912 SOT-223
BAS 78D BAS78D 062702 - A913 SOT-223
Maximum Ratings
Parameter BAS BAS BAS BAS Unit

Symbol 78A 78 B 78C 780
Reverse voltage VR 50 100 200 400 V

Peak reverse voltage VRM 50 100 200 400 V
Forward current IF 1 A
Peak forward current IFM 1 A
Surge forward current t=ll1 S I FS 10 A
Total power dissipation, TA :525°C 1) PIOI 1.5 W
Junction temperature Tj 150 ·C
Storage temperature range T"lg -65 to + 150 ·C
Thermal Resistance
Junction - ambient 1) :583.3 IKIW
I) Package mounted on an epoxy printed circuit board 40mm x 40mm x 1.5mm.
Mounting pad for the collector lead min 6 cm 2.
•) For detailed dimensions see chapter Package Outlines.
Siemens 91
BAS 78A ... BAS 780
Characteristics
at TA =25 ·C, unless otherwise specified.
Parameter Unit
DC Characteristics
Breakdown voltage VISR) V
Ic = 10mA, Is = 0 BAS 78A 50 - -
BAS 78B 100 - -
BAS
BAS
78C
780
200
400
-- -
-
Forward voltage 1) VF V
IF = lA - - 1.6
IF =2A - - 2
Reverse current IR ~A
VR = VA max - - 1
VA = VA max, TA = 150 ·C - - 50
AC Characteristics
Diode capacitance Co
VA =0, f= 1 MHz - 10 - pF
Reverse recovery time trr ~s
IF = 200mA, IR = 200mA,
RL = lOOn
- 1 -
measured at IA = 20mA
I ~ III Oscilloscope
90%
Pulse generator: tp = 100ns,D = 0.05 Oscilloscope: R" son

t, " 0.6ns.R; " SOQ t, = 0.3Sns.
Vp = VR + /pR, C:S IpF
1)Pulse test conditioRs:t;?; 300~s;D = 2%
92 Siemens
BAS 78 A ... BAS 78 0
Total power dissipation P IOI = ((TAl Forward current IF = ((VFI

A TA=2S"C
2.0 '-,- -'-"-T-r-'-~-'-'~-' 10'
W ----i-f--I--I-- - - -
5
~-I-'H-r-~~-+-14-4-'-I
-1---1---- 1------1-- I--
-I--H-t--t-j-I- -- -
hl·-'- - - - -1--- -.--
I--
,/.V
-1-1\ 1--+-
5
--1-1\1-- - - - - - -
H--t--H-I-l\-,\-.--~-· 1= _ ~ ,:::..~ _
1.0 I-- I-- -~ - .- . --1--- 10-
, I
- -f--j-f-j--+·- 1\ - - 1- - - -
H-t-'H-I--II-I-f\ - - r-r--
- 1--1-1----\_._---
0.5 =_ =~~I~-=:~
.-
- =~~-=~~
- -. - -- - - - --. -. - '\ -i-
I
c-- I -
--'- -_.- . - -- -1\'-
-: .:. _'l~ __ L-\ 10- 3 I
100 O( 150 o 2 V
----v,
Reverse currant fR = ((TAl

nA VeE = 10 V
10 5
:- .-
- I-
5 -- ..
~
I.
. 17-
! m'
5
,-
1-' ",,""
- ~.
max ...... l typ.

10 3
- --
5 Z.:.. - ~--
/-
.
-
I
10 1
5
-1- -- 1=
-T,.
Siemens 93
Silicon Switching Diodes BAS 79A ... BAS 790
• Common cathode
A2
Type Marking Ordering code (12-mm tape) Package·

BAS 79A BAS79A 062702 - A914 SOT-223
BAS 79B BAS 79B 062702 - A915 SOT-223
BAS 79C BAS 79C 062702 - A916 SOT-223
BAS 790 BAS790 062702 - A917 SOT-223
Maximum Ratings
BAS BAS BAS
Parameter Symbol BAS 79'B Unit
79A 79C 790
Forward current IF 1 A
Peak forward current IFM 1 A
Surge forward current t=l\ls IFS 10 A
Total power dissipation, TA S 25 ° C 1) P tot 1.5 W
Storage temperature range Tstg -65 to + 150 °C
Thermal Resistance
Junction - ambient 1) s83.3
1) Package mounted on an epoKy printed circuit board 40mm x 40mm x I.Smm
Mounting pad for the collector lead min 6cm2
Of For detailed dimensions see chapter Package Outlines.
94 Siemens
'.....,...--
BAS 79A ... BAS 790
Characteristics
at TA =25°C. unless otherwise specified.
Parameter I
Symbol Values
IUnit
min. Ityp. Imax.
DC Characteristics
Breakdown voltage VISA) V
=
Ic 10mA. 18 =0 BAS 79A 50 - -
BAS 79B 100 - -
BAS 79C 200 - -
BAS 79D 400 - -
Forward voltage 1) VF V
IF =1A - - 1.6 V
IF =2A - - 2
Reverse current IA
VA =VA max - - 1 1-1 A
=
VA VA max. TA =150°C - - 50
AC Characteristics
Diode capacitance Co pF
VA =O. f =1 MHz - 10 -
Reverse recovery time trr I-IS
IF =200mA. IA =200mA. - 1 -
Rl = lOOn
measured at IA =20mA
OUT
I ~ III Osci II oscope

90%
1, _ _ _ -*-_ _ _ _--'
Pulse generator: tp =100m,D = 0.05 Oscilloscope: R = 50n

t, = 0.6m.R, = 50n Ir = O.35ns.
Vp = V R + IfXR, C :s 1pF
1}Pulse test conditions:t:2 3001-ls;0 = 2%
Siemens 95
BAS 79 A ... BAS 79 0
Total power dissipation Plot = f(TA ) Forward current IF = f(VF)

A TA = 2S"C
2.0 ,,-.,-,,'-Y- ~ 10'
W -I-~-- ~
- .. c-- -. -. '- .- -t--j-l--j-j 5
1--1- -. - - -. -,,1- r'l- ~

~h'" --'I-i-J--t-l-+-+-j
/'
-- -f\.- -'-1---1-1-
s
---- \ -- 1-1-+-1---1
rr- 'S--
r-- __ _~-.IH-+-t-\- H-+-i , I .
1.0 10"
r-- - -- --1\ --t--lH---t-+-H S
. - 1-:--1-- -f\- -r-- 0-
- - .. -. -- - \ -- -1-0-1-
0.5 - -- - ~ .. \-"'\-+-+--I-l 2
I\.
- - 1-1-- - - - -1--+'<1-1--1
I---f------.- .. -1- f\~
OLL~LL_L_LL~LL~l_L~I\J 10"l
o 50 100 ·C 150 a 2 V
-Ti.
Reverse current lR = ((TA )

nA VeE = 10 V
lOS
max ..... Ityp,

lO l
S
10'
o so 100 ISO °c
-~
96 Siemens
Silicon Low Leakage Diode BAS116
• Low Leakage applications
c(J.
• Medium speed switching times
• Single diode
Type Marking Ordering code B-mm tape Package

BAS116 JVs Q62702-A919 SOT 23
Maximum Ratings
Description Symbol BAS116 Unit
Surge forward current ,t = 1ps IFs 4.5 A
Total power dissipation, TA=25·C P IOI 330 mW
Junction temperature 1j 150 ·C
Storage temperature range Tsig -65 to + 150 ·C
Thermal Resistance
Junction-ambient 1) IRIhJA :$450 IKIW
1) Package mounted on alumina 15mm x 16.7mm x O.7mm
Siemens 97
Characteristics
Description
max.
IUnit
DC Characteristics
breakdown voltage V(SR)
I(SR) =100 vA 75 · . V
Forward voltage VF
IF = 1mA · · 900 mV
IF= 10mA · · 1000 mV
IF = 50mA · · 1100 mV
IF= 150mA · · 1250 mV
Reverse current IR
VR=75V · · 5 nA
VR=75V, TA=150°C · · 80 nA
AC Characteristics
VR=OV, f=1 MHz · ,. 2 . pF
Reverse recovery time t"
IF = 10mA, IR = 10mA,
RL = 100Q
· 0.5 3 lIs
measured at IR = 1mA

OUT
Oscilloscope
Pulse generator: tp= 100ns,O= 0.05 Oscilloscope: R = 50Q

=
t, 0.6ns,Rj = son t, = 0.35ns.
C:s 1pF
98 Siemens
Total powar dissipation p.o. = f( TA ) Rever.e current I. = f( TA )

mW 10'
400 ,.,-,.,-,.,-,.,-rnrnrn;-r"1;-r"1'"
VA -7 V
ox.
v
/'
,/
10'
/..
/ typo
'"
1/
100 1+1+1+H-f-Hf-Hr+I'-H'-H-t-!
/
O~LLLLLLUUUUUUUW~~
'c tao
o 50 100 150 200 °c 00 100
- - - TA
-T. --'A
Forward current I, = fIV,) Peak forward current I'M = f(t)

TA = 25 "C T. = 25 "C
,,
,.0
mA
,p.
100
, m• •
5
,,
~
, l~O_1I
!
.0 I
J
I lO-'mmll3:~~!31m
o=+~
1 5
/
.. / . 1 V 1.' 10-6 10-5 10- 4
11Iu.JJIIUL...J,I...LIIULIIU.......
111.u.....1.L..J
1O-1L...L-L.LJ1...L..LJ.
10- 3 10-1
IJ..LI1...IL..J..LU
10-' 100 s
-VF
-t
Siemens 99
Forward voltage VF f (TA) =

1.2
-I'- I'-I'-r-.
-
1.0
IF ., Om l"- i-
l"- I"-
v.
--
I ---
-t-
-r-. r-. t-
Om i- i- t-
--
t- t- r-.
Om r-. r-. :-
-- -r-. I'- r-.
-- -
1m
t-
O 1m
." r--
&0
--T. 100 C· 1&0
100 Siemens
Silicon Schottky Diodes BAT 17 ...
• For mixer applications in the VHF/UHF range

ESD: Electrostatic discharge sensitive device, observe handling precautions!

(tape and reel)
BAT 17 53 Q 62702 - A504 SOT-23
10 ~ 03
BAT 17-04 54 Q 62702 - A775 3
1a ~I~ 02
BAT 17-05 55 Q 62702 - A776 3
10 ~ I ItEI 02
BAT 17-06 56 Q 62702 - A777 3
10 !tEl I~ 02

Thermal Resistance
Junction - ambient1 I RthJA I :5450 IKIW
Siemens 101
BAT 17 ...

Parameter Unit
DC characteristics
Breakdown voltage V(SR) 4 - - V
IR = 10 J.tA
Reverse current IR J.tA
VR =3V - - 0.25
VR = 3 V, TA = 60°C - - 1.25
VR=4V - - 10
IF=0.1mA 200 275 350
IF = 1 mA - 340 450
h= 10mA 350 425 600
Diode capacitance Cr - 0.75 1 pF
VR=O, f=1 MHz
Differential forward resistance Ii - 8 15 n
IF = 5 mA, f= 10 kHz
Noise figure F - 5.8 7 dB
h=2 mA, f=900 MHz
IF noise figure:
F= 1.5 dB, f= 35 MHz
102 Siemens
BAT 17 ...
Reverse current IR =f (VAl
I/' V TA =150 0(
/
~TA=
~-400(
i:: 25°(
f'Z I'" IT
f-- 85°(
1500 ( ~ J ~ f-.. ] 850(
II 7 IT
25°(
10-2 J I I
o 0.1 0.2 0.3 0.4 0.5 0.6 V 1.0 2.0 3.0 4.0 V
-If
Diode capacitance Or f (VR) = Differential forward resistance 'f =f (4)

f= 1 MHz f=10kHz
pF
1.0
\
[T
~ [\
-..;;
1 1"......
0.5
I\,
10
1
'"
5 !'....
o
o 1.0 2.0 3.0 4.0 V .
Siemens 103
Silicon Schottky Diode BAT 64
• For low-loss, fast-recovery rectifiers, meter protection,

bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage

(tape and reeQ
BAT 64 64 Q 62702 - A879 SOT-23
10 ~ 03
Maximum Ratings
Average forward current (50/60 Hz, sinus) I FAV 100 rnA
Surge forward current (t $10 ms) I FSM 800 rnA
Total power dissipation (TA $ 25 °C2 » Ptot 230 mW
Thermal Resistance
Junction - ambient1 I RthJA 1$430 IKIW
104 Siemens
BAT 64
Parameter Unit
DC characteristics
Reverse current fR J.IA
VR=25V - - 2
VR = 25 V, TA = 125°C - - 200
fF= 1 mA - 320 -
fF= 10mA - 375 -
fF= 30mA - 420 -
fF= 100 mA - 550 1000
VR = 1 V, f = 1 MHz - 4 6
Reverse recovery time trr ns
fF:fRl:fR2=10:10:1 mA - - 5
Siemens 105
Silicon Switching Diode Array BAV70

• Common cathode

for versions In bulk versions on 8 mm-tape
(3 BAV70 A4 Q6800O-A3574 Q68000-A6622 SOT 23
Maximum ratings per diode

t= 1 ~s
TA= 25°C
Storage temperature range Tstg -65 .. ·+150 °C
Thermal resistance RthJA ::::;450 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
(3 Preferred type
106 Siemens
BAV70
Electrical characteristics per diode


I(BR) = 100 IlA
Forward voltage VF
iF= 1 rnA - - 715 mV
IF= 10mA - - 855 mV
iF= 50mA - - 1000 mV
iF=150mA - - 1250 mV
Reverse current IR
VR = 70V - - 2,5 IlA
VR = 25 V, TA = 150°C - - 30 IlA
VR = 70 V, TA = 150°C - - 50 IlA

VR=OV,f=1MHz
if = 10 rnA, IR = 10 mA,
RL = 100n,
OUT

tr = 0,6 ns, Ri = 50 n tr = 0,35 ns
C:5 1 pF
Siemens 107
BAV70
Total power dissipation Ptot = f( TA) Reverse current I R = f (TA)

mW nA
400 105
5
VR =70V
V -"
max.
i--" 1/
7OV/
200
5
25V
100
1\
5
typo
/
o 10'
/,/
o 50 100 150 200 ·C o 50 100 150 O(
-1A -7i.
Forward current iF = f (VF) Peak forward current IFM = f(t)

TA = 25°C TA= 25°C
rnA A
150 10 1
I /D=0.005
5 0.01
F02
'lOS
II
'll0.2 ~
100 I
typo I max. .... ~
~t2<
i
50
lO-
,
i
Ii S D=i
T t~ T
l/ 1111 I 1111 I 1111 I I
o 10-1
o 0,5 1,5 V 10-6 10- 5 10- 4 10- 3 10-1 10-' 100 s
-t
108 Siemens
BAV70
V
1,0
ill
I F = 100 mA
r-
t-t-_
I I r....
f ~w.
10 mA r--r--
J t---
0,5
ij;--r-- 't---r--
'r-l r--r-- ......
-I- - O,1mA r-.,
1"',
,,~
'i'
o
o 50 100 150 °c
-TA
Siemens 109
C~A1
• Common cathode
~A2
BAV74 JA Q62702-A498 Q62702-A695 SOT 23

Peak forward current IFM 250 rnA
t= 1 I-Ls
TA = 25°C
Junction temperature Ti 175 °C
Storage temperature range Tstg -65 .. · +150 °C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
110 Siemens
BAV74


I(BR) = 100 j.!A
IF = 100 rnA
Reverse current IR
VR = 50V - - 0,1 j.!A
VR = 50 V, TA = 150°C - - 100 j.!A

VR = 0 V, f= 1 MHz
RL= 1000,
OUT
Pulse generator: tp = 100 ns, 0 = 0,05 Oscilloscope: R = 50 0

tr = 0,6 ns, Ri = 50 0 tr = 0,35 ns
C::; 1 pF
Siemens 111
BAV74
Total power dissipation P tot = f ( TA) Reverse current IR = f(TA)
mW nA
400 105
5
YR =70V
/ /
max.
1-"'
7O~1/
200
I' 25V
1'1
100 1\
1\
typo
III
j
o
o 50 100 150 200 ·C 50 150 °C
Forward current IF = f(VF) Peak forward current I FM = f (t)

TA = 25°C TA=25°C
mA A
150 10
I
5
10' / :~:~5
~O.2
100
I 5
typo II max.
"l'
10° "I><
i 5
50 ~
10-' I
Ii
I
5
tt\{L
D=--.F...
T
T
[/
o 111111111 11111 I I
o 0,5 "'" 1,5 V
IV
10-6 10-5 10-4 10- 3 10-1 10-' 10° 5
-t
112 Siemens
BAV74

V
1,0
ill r-_
I F = 100 rnA
I I
r-r-r-
hl ..........
10 mA
r--- .....
~ . . . . . . r--
0,5
1' ....
'}.k r--r-..
l- I- O,1mA
r-. . . . I'-
1'1'-
..... ""
o
o 50 100 150 0(
Siemens 113
~Cl
• Connected in series
C2,Al
f;jfo A2

Iil BAV99 A7 Q68000-A 1185 Q68000-A549 SOT 23

t= 1 ~s
TA= 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
mPreferred type
114 Siemens
BAV99


I(BR) = 100 !LA
Forward voltage VF
h= 1 rnA - - 715 mV
h= 10 mA - - 855 mV
h= 50mA - - 1000 mV
h =150 mA - - 1250 mV
Reverse current IR
VR = 70V - - 2,5 !LA
VR = 25 V, TA = 150°C - - 30 !LA
VR = 70 V, TA = 150°C - - 50 !LA

VR = 0 V, f= 1 MHz
h = 10 mA, IR = 10 mA
RL= 100n,
OUT

tr = 0,6 ns, Ri = 50 n tr = 0,35 ns
C::; 1 pF
Siemens 115
BAV99
Total power dissipation Ptot = '( TA) Reverse current I R = '( TA)
mW nA
400 101
5
V.=70V
,/
1\ V
max.
t-. II
70V 'j
200
5
\
25V
\
100
5
typo
1/
o I
o 50 100 150 200 ·C 50 150°C
Forward current IF = '(VF) Peak forward current I FM = '(t)

TA = 25°C TA = 25°C
mA
150
I ;0-0.005
5 0.01
F02
/
l'oS
I'll
0.2
100 I
typo Ii max.
100
~
i 5
50
1
Ii 0=+ f~ T
o V 2 1111111111 I 1111 I I
o 0,5 1,5 V
-f
116 Siemens
BAV99
Forward voltage VF = f (TAl

V
1,0
ill r-r-
IF=10~~A -r--r--
w..
10 mA . . . r--.. .
i:} . . . r--r-. .....
0,5
r-
X
r- O,1mA
"' ..... .....
~, r--.....
~~
o
o 50 100 150 ·C
Siemens 117
Silicon Low Leakage Diode Array BAV170

• Common cathode

BAV170 JXs Q62702-A920 SOT 23
Maximum Ratings
Description Symbol BAV170 Unit
Surge forward current ,t = 1115 IFs 4.5 A
Total power dissipation, TA = 25· C PlOt 330 mW
Storage temperature range Ts,g -65 to +150 ·C
Thermal Resistance
Junction-ambient 1) :;;450 IKIW
118 Siemens
Characteristics
at TA = 25 • C, unless otherwise specified.
Description
I I
Symbol Ratings
min. Ityp. Imax. IUnit
DC Characterl~tlcs
breakdown voltage VIBR)

'IBR) = 100 llA 70 - - V
Forward voltage VF
IF= 1mA - - 900 mV
IF= 10mA - - 1000 mV
IF = 50mA - - 1100 mV
IF= 150mA - - 1250 mV
Reverse current IR
VR=70V - - 5 nA
VR = 70V, TA = 150·C - - 80 nA
AC Characteristics
VR=OV, f=1 MHz - 2 - pF
Reverse recovery time trr
IF = 1OmA, IR = 10mA,
RL = 100Q
- 0.5 3 lIS

DUT
Oscilloscope
Pulse generator: tp= 100ns,D= 0.05 Oscilloscope: R = son

t, = 0.6ns,Ri = son t, = O.35ns,
C:s 1pF
Siemens 119
Total pow.r diaaipation Po.. = fl TA) Rav.,.. curr.nt I. '" fl TAl

..w 10'
400
v._
r. r-
10'
x.
V
1/
..;'
200
Yo.
10'
I' ~
100
II
1
10'
.0
°° so 100
-1A
150
--'A
- TA
tOO ·c 110
Forward currant I, = fW,) P..k forward current 10M '" fIt)

TA = 25 "C TA - 25 "C
,,
110
"'" ,0=0.005
0.01
"
,0.02
f /~.OS
/
yo. m. '/~·1 ::
100
0.2
I s
I
... ~
,: .,.:
.0 ~
I I II
I I to- 1
II
I S
0=-;- tiQ-L
.. ~ ... ~' nm 111111111111
T
o
o
-v. 1 V t.'
to-2
to-6 10-S to'" tool to-2 to-'
-t
v:/' s
120 Siemens
Forward voltage VF =f (TA)

1.2
r- -l-
v.
1.0
~-
I-
IF ·1 Om - 1"""_
--r-.
-I- l-
-- -
----r---r---
t- 1--
I I- 0m
r- l-I--
--
-
1-1--0 Om
I""" I-
1m r---_
r-- r--_
.. o 1m
....
80
--T. 100 C· 150
Siemens 121
J7Jw
• Connected in series C1
C2,A1
fifo A2

BAV199 JYs Q62702-A921 SOT23
Maximum Ratings
Description Symbol BAV199 Unit
Surge forward current ,t = 1lIS IFS 4.5 A
Total power dissipation, TA = 25 ° C P IOI 330 mW
Storage temperature range TSl9 -65 to + 150 ·C
Thermal Resistance
Junction-ambient! ) IRiJlJA S450 IKM'
'l Package mounted on alumina 15mm x 1S.7mm x O.7mm
122 Siemens
Characteristics
Description Unit
Imax.
DC Characteristics
breakdown voltage V(BR)
I(BR) = 100 pA 70 - - V
Forward voltage VF
IF = 1mA - - 900 mV
--- ---
IF= 10mA 1000 mV
IF = 50mA 1100 mV
IF= 150mA 1250 mV
Reverse current IR
VR=70V - - 5 nA
VR=70V, TA=150·C - - 80 nA
AC Characteristics
VR=OV,f=1 MHz - 2 - pF
Reverse recovery time tf(
IF = 10mA, IR = 10mA,
RL =100Q
- 0.5 3 ps

OUT
Oscilloscope
Pulse generator: tp= 100ns,D= 0.05 Oscilloscope: R = 50n

t, == 0.6ns,Rj = son t, = 0.35n5,
C s 1pF
Siemens 123
Silicon low leakage Diode Array BAV199
Total power dissipation p••• = f( TA) Rever.e current I. = f( TA )

mW '0'
400
VA =7 V
ox.
r-
./
:/
V
'0'
~
200
typo
'0'
100
" \
'0' . /
o
--T.
'0'
o 50 100 150 200 ec '0 100 ·C 100
-J,i --'A
Forward current IF = f(VF) Peak forward current IFM = fIt)

TA = 25 OC TA = 25 OC '
'.0 A
mA
I, 10 2
I 5
1/ 0 =0005
" 0.D1
I IF M
r 10'
II
0.02
[;~.05
rl'0.2
'00
yp.
, ma.
5
,
,
I: 10°
5
! tl'
.0 I
, I =
II
,
I 10-
I}
5
O=-f tl};r- T
.... ~'
.. ,/
-v. 1 Y 1.8
10-2 1111 I I III I 1111 I I
10-6 10-5 10"' 10- 3 10- 2 1(r' 10° s
-t
124 Siemens

1.'
~:-
--r--
1.0
~-
'F -1 Om
--- --f-
-- -
v.
-- r- r--r-.
Om :--
--
I -- --- -- -
I--
Om
I-r-
-- --
-
1m
-.-.
.. o 1m
SO 100 C' 180

--TA
Siemens 125
Silicon Switching Diode Array BAW56
• For high-speed switching applications

• Common anode

!:"IBAW56 A1 Q62702-A471 Q62702-A688 SOT 23

t = 1 !!s
TA = 25 DC
Storage temperature range Tstg -65···+150 DC

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
!:"I Preferred type
126 Siemens
BAW56


I(BR) = 100 (.LA
Forward voltage VF
IF= 1 rnA - - 715 mV
IF= 10mA - - 855 mV
IF= 50mA - - 1000 mV
IF =150 rnA - - 1250 mV
Reverse current IR
VR = 70V - - 2,5 (.LA
VR = 25 V, TA = 150°C - - 30 (.LA
VR = 70 V, TA = 150°C - - 50 (.LA

VR = OV, f=1 MHz
RL= 1000,
OUT
Pulse generator: tp = 100 ns, 0 = 0,05 Oscilloscope: R = 50 0

tr = 0,6 ns, RI = 50 0 tr = 0,35 ns
CS 1 pF
Siemens 127
BAW56
Total power dissipation Ptot = f (TA) Reverse current I R = f (TA)
mY! nA
400 105
5
\-R=70V
r-. V ,;'
max.
/1/
200
7OY/II
5
25V
1\
100 1\
1\
5
typo
J/
o /J
o 50 100 150 200 ·C 50 100 150 O(
-/A
Forward current IF = f(VF) Peak forward current I FM = f (t)

TA= 25°C TA= 25°C
mA A
150 10 1
I 1/0= 0.005
5 0.01
0.02
[;~.05
II I/ r
0.2
ll
100 I
typo Ii max.
~
i
50
1
I
Ii O=J...
t
T tQ-t- T
i,..o' 1/ I 1111 I 1111 I 1111 I I
o 10-1
o 0,5 1,5 V 10-6 10-5 10-4 10- 3 10-1 10-1 10° S
-t
128 Siemens
BAW56
V
1,0
ill
I F= 10~ ~A 1---
r-...
f ~
r-. ....
10 mA
I--
0,5
1:}-~ r-.r-. ....
-
"'N...
O,1mA
r-. .....
I"-.
I"-.r-. .....
1"-. .....
o
o 50 100 150 DC
-TA
Siemens 129
Silicon Switching Diodes BAW78 A
···BAW78 D

BAW78 A GA Q62702-A675 Q62702-A778 SOT 89
BAW78 B GB Q62702-A676 Q62702-A779 SOT 89
BAW78 C GC Q62702-A677 Q62702-A784 SOT 89
BAW78 0 GO Q62702-A678 Q62702-A 109 SOT 89
Maximum ratings
Parameter Symbol BAW78 A BAW78B BAW78 C BAW7S D Unit
Forward current h 1 A
Peak forward current hM 1 A
Surge forward current hs 10 A
f=1ll s
Total power dissipation P tot W
TA = 25°C
Thermal resistance RthJA :5125 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
130 Siemens
BAW78 A
.. ·BAW78D
at TA = 25 cC, unless otherwise specified

Breakdown voltage V(BRI
I(BRI = 100!lA
BAW78A 50 - - V
BAW78B 100 - - V
BAW78C 200 - - V
BAW78D 400 - - V
Forward voltage') VF
IF= 1 A - - 1,6 V
1F=2A - - 2 V
Reverse current IR
VR = VRmax - - 1 !lA
VR = VRmax, TA = 150 cC - - 50 !lA

Diode capacitance Co - 10 - pF
VR = 0, f=1 MHz
Reverse recovery time trr - 1 - I1s
IF = 200 rnA, IR = 200 rnA,
RL= 1000,
measured at IR = 20 rnA
OUT
Pulse generator: t p = 100 ns, D = 0,05 Oscilloscope: R = 50 0

t r = 0,6 ns, RI = 50 tr = 0,35 ns
CS 1 pF
') Pulse test: tp S 300 1lS, D = 20/0.
Siemens 131
BAW78 A
···BAW78D
Total power dIssIpatIon Ptot = '(TA) Forward current IF = f (VF)

TA=25°C
W A
1,2 10 1
r
1.0
0,8
'\.
\
5
5
/'
".,
1\
1\
0,6 1 I
1\
0,4 1\
1\ 1(1
2
1\
0,2 5
o 1\ 10-3
o 50 100 150 0( o 2 V
-T.
Peak forward current I FM = '(t) Reverse current I R = f ( TA)

TA= 25°C VR = VRrnax
0=0.005
5
V?·OI
~0.02
V~·05
0.1
/02
"
5
V
100
I'- ~~ max .... Ityp
lO-1 10 2
V
S fp - fpl-- 5
O=T _r-~
I--T
'I"
10-2 IIII I Illl I 1111 I I 101
m-6 10-5 10- 4 10- 3 10- 2 10-1 100 5 o SO 100 150 0(
-f -T.
132 Siemens
Silicon Switching Diodes BAW79 A
···BAW79 D
• For high-speed switching A2

• Common cathode

BAW79 A GE Q62702-A679 Q62702-A7B1 SOTB9
BAW79B GF Q62702-A680 Q62702-A782 SOT 89
BAW79 C GG Q62702-A681 Q62702-A771 SOT 89
BAW79 0 GH Q62702-A682 Q62702-A733 SOT 89

Parameter Symbol BAW 79 A BAW 79 B BAW 79 C BAW 79 0 Unit
Forward current h 1 A
Peak forward current ~ 1 A
Surge forward current hs 10 A
t= 1 its
Total power dissipation Ptot W
TA = 25°C
Junction temperature n 150 °C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 133
BAW79 A
···BAW79D


Breakdown voltage V(BR)
I(BR) = 100!lA
BAW79 A 50 - - V
BAW79B 100 - - V
BAW79C 200 - - V
BAW79 D 400 - - V
Forward voltage') VF
IF = 1 A - - 1,6 V
IF=2A - - 2 V
Reverse current IR
VR = VRmax - - 1 IlA
VR = VRmax, TA = 150°C - - 50 !lA

VR = OV, f=1 MHz
Reverse recovery time trr - 1 - Ils
IF = 200 mA, IR = 200 mA,
RL= 1000,
OUT
Pulse generator: tp = 100 ns, D = 0,05 Oscilloscope: R = 500

tr = 0,6 ns, R; = 50 tr = 0,35 ns
C:::; 1 pF
') Pulse test: tp:::; 300 Ils, D = 20/0.
134 Siemens
BAW79A
",BAW79 D
Total power dissipation Ptot = f( TA) Forward current IF = f (VF)

TA = 25°C
W A
1,2 10'
5
1"1,0
0,8
\.
1\
./
""
1\
\. ,
0,6 I
0,4 1\
1\ 2
\.
0,2
1\
o \ 10-3
o 50 100 150·( o 2 V
--~
Peak forward current lFM = f (t) Reverse current I R = f ( TA)

TA = 25°C VR = VRrnax
D=0.005
V~·Ol
:%~.02
:/:,~05
/ 0.1 ~'
/02
V
~ max~ Vtyp.
100
5
, V
t ' - fpl-
T _ I-'-~
D=--'£'
I--T
II I IIII I IIII I I
V
10-2
10-6 10-5 10- 4 10- 3 10- 2 10-' 10° s 50 100 150 0(
-t
Siemens 135
Silicon Switching Diode Array BAW101
• Electrically isolated high-voltage medium-speed diodes
A2/lkC2
A1~C1
----!.-4-----
SAW 101 JP Q62702-A3444 Q62702-A71" SOT 143
Maximum ratings
Surge forward current IFS 4,5 A
t= 1 LlS
TA = 25°C
Thermal resistance RthJA ::5450 KIW

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
136 Siemens
SAW 101

I (BR) = 100 f.lA
Forward voltage VF - - 1,3 V
IF= 100 rnA
Reverse current IR
VR = 250 V - - 150 nA
VR = 250 V, TA = 150°C - - 50 /!A

VR = 0, f= 1 MHz
Reverse recovery time trr - 1 - /!s
RL= 100n,
Total power dissipation Ptot = f ( TAl

mW
400
~ot
t 300
I-I-h,.
1\:
200
1\:
i\
1\
r-...
l\.
100
1\:
1\:
\
l\.
l\.
o K
o 50 100 150 °C
-7;.
Siemens 137
BAW101
Forward current IF = f (VF) Reverse current I R = f ( TA)

TA = 25°C
A
10°
lL
1/
, I
1/
5 m.x. 1/ 1/ typo
2
~. ,,' IJ
5
10-l 10'
o 1,0 2,0 V o so 100 150 'C
-Ii
138 Siemens
Silicon Low Leakage Diode Array BAW156
A~Cl
• Common anode
[;jfo C2
Type Marking Ordering code 8-mm tape Package

BAW156 JZs Q62702-A922 SOT 23
Maximum Ratings
Description Symbol BAW156 Unit
Surge forward current ,t =l11S IFS 4.5 A
Total power dissipation, TA =25· C PID1 330 mW
Junction temperature Ii 150 ·C
Storage temperature range Tstg -65 to + 150 ·C
Thermal Resistance
Junction-ambient 1) I
RlhJA :;;450 IKIW
Siemens 139
Characteristics
at TA =25°C, unless otherwise specified.
Description Unit
DC Characteristics
breakdown voitage V(BR)
=
I(BR) 100 pA 70 - - V
Forward voltage VF
IF= 1mA - - 900 mV
IF= 10mA - - 1000 mV
IF=50mA - -- 1100 mV
IF=150mA - 1250 mV
Reverse current IR
VR=70V - - 5 nA
VR=70V, TA=150°C - - 80 nA
AC Characteristics
VR=OV, f= 1 MHz - 2 - pF
Reverse recovery time t"
IF = 10mA, IR = 10mA,
RL =100Q
- 0.5 3 }1s

OUT
Oscilloscope
Pulse generator: tp= 100ns,O= 0.05 Oscilloscope: R = son

t, = 0.6ns,Rj = son t, = 0.3Sns,
C:s lpF
140 Siemens
Total power dissipation p,., = f( TAl Rever.e current I. = f( TAl

mW I.'
400
r.
V. -7
a ••
,;
V
I.'
200
, I.'
V I,p.
\
100
I.' . /
o I.'
I. 100 'C 150
o so 100 lS0 200 ·C -TA
-~ --'A
Forward current I, = fW,1 Peak forward current I'M = fit)

TA = 25 "C TA = 25 "C
15.
.... I,
'F I
II ••
rp·
, ma.
S
,
,!
I. I
II
II I
I
J
~ .. I-
.1 , V 1.1
-VF
-I
Siemens 141
Forward voltage VF =f (TA)

'.2
'.0
.1- I-
.1-
1-1-
IF ., Om
-
... ----
.-
.1- l-
I--
I- 1-1--
1-- :---
-r-.. r--r-.. r-_

'm
Om
~-
Om
r-~
..... ~ --
-- ~
.. 'm ...... ............
60 100 C' 150

--TA
142 Siemens
Silicon Tuning Diode BB 419
• For VHF tuned circuit applications

calh~

(taped)
BB 419 white/2 062702-B499 SOD-123
Maximum Ratings
Reverse voltage VA 28 V
Peak reverse voltage VAM 30 V
Forward current, TA :5 60 °C IF 20 mA
Siemens 143
BB 419
Characeristics
at TA=25 °C, unless otherwise specified.
min. typo max.
Reverse current fR nA
VR=28 V - - 20
VR =28 V, TA =60 °C - - 200
f = 1 MHz
VR = 3V 26 - 32
VR = 25 V 4.3 - 6
Capacitance ratio CT3V/CT25V -
VR=3 V/25 V 5 - 6.5
Series resistance rs n
= 100 MHz, CT = 12 pF - 0.35 0.5
Figure of merit Q -
(=50 MHz, VR =3 V - 280 -
(=200 MHz, VR =25 V 600
Diode capacitance CT = ( (VR)

pF
60
l"-
40
\.
30 r\
\
20
10
o
0,3
"'
10 30 V
-VR
144 Siemens
cal~
• For AM tuning applications
• Specified tuning range 1... 8 V

(taped)
BB 512 white/M Q62702-A479 SOD-123
Maximum Ratings
Forward current, TAS60 ·C IF 50 mA
Operating temperature range Top -55 .. : + 125 ·C
Storage temperature range T stg -55 ... + 150 ·C
Siemens 145
BB 512
at TA = 25 ° C, unless otherwise specified.
min. typo max.
Reverse current fR nA
VR= 10 V - - 20
VR=10V, TA=60 °C - - 200
f= 1 MHz
VR=1 V 440 470 520
VR=8 V 17.5 - 34
Capacitance ratio Cn/CTS -
VR = 1 V/8 V 15 - -
Series resistance rs Q
f=0.5 MHz, VR=1 V - 1.4 -
Figure of merit Q -
f=0.5 MHz, VR=1 V - 480 -
Temperature coefficient of diode capacitance TCe ppm/K
f= 1 MHz, VR = 1 V - 500 -
Capacitance matching ACT/CT - - 3 0/0
VR= 1... 8 V
146 Siemens
Silicon Tuning Diode 88515
• For UHF and VHF TV/VTR tuners

cal~
Type BB515
Ordering code Q62702-B398
Marking white/S
Maximum ratings
Reverse voltage 30 V
Forward current 20 rnA
TA ::;;60oC
Operating temperature range -55 ... +125
Storage temperature range -55 ... +150
Siemens 147
BB 515

min typ max
Reverse current IR
=
VR 30 V 10 nA
30 V, TA 85°C= 200 nA
Diode capacitance, f= 1 MHz CT
VR =
1V 16 19.5 pF
28V 1.85 - 2.25 pF
Capacitance ratio CT1 8 9.6
=
VR 1 V, 28 V; f= 1 MHz CT28
Capacitance matching ~CT 3 %
=
VR 0.5 V... 28 V CT
Series resistance r.
=
CT 9 pF, f= 470 MHz 0.5 0
Series inductance L. 2.8 nH
Diode capacitance CT = f(VR)

f= 1 MHz
pF
24
f\
\
12 ~
1\
~
8
"-"
o
0.3 3 10 30V
148 Siemens
ca'h~
• For VHF/CATV TV/VTR tuners
with extended frequency band
Type 88619
Ordering code Q62702-8401
Marking yellow/S
Maximum ratings
Forward current 20 mA
Operating temperature range -55 ... +125
Storage temperature range -55 ... +150
Siemens 149
BB 619

min typ max·
Reverse current IR
VR = 30 V 10 nA
30 V, TA = 85°C 200 nA
Diode capacitance, f= 1 MHz CT
VR = 1 V 33.5 - 41 pF
28 V 2.4 2.9 pF
Capacitance ratio CT l 12.5 14
VR = 1 V, 28 V; f= 1 MHz CT28
Capacitance matching ..1CT 2.5 %
VR = 1 v. .. 28 V, f = 1 MHz CT
Series resistance rs 0.7 Q
CT = 30 pF; f= 100 MHz
Series inductance Ls 2.8 nH
Diode capacitance CT = f (VR )

f= 1 MHz
pF
60
40
"
i\.
30 '\
\
20
r\
"
10
o
0,3
'\.
10
-
30V
-VR
150 Siemens
Cath~
• For Hyperband TV/VTR tuners, 8d I
Type 88620
Ordering code Q62702-8403
Marking red/S
Maximum ratings
Operating temperature range -55 ... +125 °C
Storage temperature range -55 ... +150 °C
Siemens 151
88620

min typ max
Reverse current IR
VR = 30 V 10 nA
30 V, TA = 85°C 200 nA
Diode capacitance, f = 1 MHz CT
VR = 1 V 62 76 pF
28V 2.9 3.4 pF
Capacitance ratio CT 1 19.5 - 25
VR = 1 V. 28 V; f = 1 MHz CT28
Capacitance matching LlCT 2.5 %
VR = 1 V... 28 V, f = 1 MHz CT
Series resistance
CT = 30 pF; f= 100 MHz
'. 1.3 Q
Series inductance los 2.8 nH
Diode capacitance CT = f (VR)

f= 1 MHz
pF
100
"
I\.
60
\..
so "I"
40
\
30
20
10
'\..
......
o
0,3 3 10 30V
152 Siemens
Silicon Dual Tuning Diode 88804
IJ
• Application in FM tuners
• Monolithic chip with common cathode for perfect tracking of both diodes
• Uniform "square law" C-V characteristics
• Ideal hifi tuning device when used in low distortion back-to-back configuration
• Available in capacitance subgroups') for convenient tuner alignment
A1
C
A2

88804 SF') Q62702-8328 Q62702-8356 SOT 23
Maximum ratings
TA:5 60°C
Operating temperature Top 100 °c
Storage temperature range Tstg -65···+150 °c
') For group coding refer to page 154.
Siemens 153
88804

at TA = 25 ac, unless otherwise specified
Characteristics Symbol min typ max Unit

Reverse current fR
VR = 16V - - 20 nA
VR= 16V, TA=60 a C - - 200 nA
Diode capacitance Co 42 - 47,5 pF
VR=2V,f=1MHz
Capacitance ratio C02v/C08V 1,65 1,7 - -
VR =2V/8V, f=1 MHz
Series resistance rs - 0,25 - n
CD = 38 pF, f= 100 MHz
Quality factor Q - 170 - -
CD = 38 pF, f=100 MHz
Temperature coefficient TCe - 330 - ppm/K
of diode capacitance
VR = 2 V, f= 1 MHz
Capacitance groups') CD
VR=2V,f=1MHz
Group- no. 0 42 - 43,5 pF
Group- no. 1 43 - 44,5 pF
Group- no. 2 44 - 45,5 pF
Group - no. 3 45 - 46,5 pF
Group-no.4 46 - 47,5 pF
') The capacitance group number is marked on the component and the package labels. One
packaging unit (e.g. 8 mm-tape) contains diodes of one group only. Delivery of discrete capaci-
tance groups requires special contract.
154 Siemens
88804
Diode capacitance per diode Co = f (VR) Capacitance deviation per diode

f=1 MHz Co(vN)fCo(VR) = ((VR)
pF VN = 1 V, 2 V, (= 1 MHz
60 3
UI
VN=1V
r-.
~ =2V
V
50 I\.
'\ V-
40 ~
\ II
\
30 1/
I'-.. III
20
rJ
10
o o
0.3 to 10 20 V o 2 4 6 8 10 a • ~ m mv
-VR -I'll
Temperature coefficient of diode capacitance

TCe = f(VR)
,
f=1 MHz
K
10-3
"'"' ':--.
4
"-
5
5
30 V
Siemens 155
cat~
• Frequency range up to 2 GHz;
special design for use in TV-sat indoor units

(taped)
BB 811 whiterr. Q62702-B478 SOO-123
Maximum Ratings
Reverse voltage VA 30 V
Forward current, TA:S 60 ° C IF 20 mA
Operating temperature range Top -55 ... + 125 °C
156 Siemens
BB 811

min. typo max.
Reverse current IR nA
VR=30 V - - 20
VR=30 V, TA =85 °C - - 500
f= 1 MHz
VR=1 V 7.8 8.8 9.8
R=28 V 0.85 1.02 1.2
Capacitance ratio CT1 /CT28 -
f= 1 MHz, VR = 1 V/28 V 7.8 8.6 9.5
Series resistance rs Q
f= 100 MHz, CT = 9 pF - 1 -
Case capacitance Cc pF
f=1 MHz - 0.1 -
Capacitance matching ACT/CT %
f= 1 MHz, VR = 0.5 ... 28 V - - 3
Series inductance Ls - 2.8 nH
Diode capacitance CT = f (VR)

f= 1 MHz
12
pF
1\
[T 10
1 8 \.
\
6 1\
~
4
2 I\.
"- r-...
o
0,3 1,0 10 V 30
Siemens 157
Silicon Dual Tuning Diode 88814
Preliminary data
• For FM radio tuners with c J7Jw A1
~A2
extended frequency band
• High tuning ratio at low
supply voltage (car radio)
• Monolithic chip (common
cathode) for perfect dual
diode tracking
• Coded capacitance groups and
group matching available
Tvpe BB 814
Ordering code Q62702-B404
Marking SH

Peak reverse voltage 20 V
TA :::; 60°C
Operating temperature range -55 ...+125 °C
Storage temperature range -55 ... +150 °C
158 Siemens
88814
Characteristics per diode (TA = 25°C)

min typ max
Reverse current fA
VA = 16 V 20 nA
16 V, TA = 60°C 200 nA
Diode capacitance, f= 1 MHz1) CT
VR = 2V 43 44.75 46.5 pF
SV 1S.2 20.S 24 pF
Capacitance ratio CT2 1.95 2.15 2.35 -
VR = 2 V, S V; f= 1 MHz CTS
Capacitance matching .dCT 3 %
VA = 2V, SV CT
Diode capacitance CT = f (VA)

per diode, f= 1 MHz
pF
100
BO
70 1'0.
60
50 '\.
40 '\.
30
20
........
10
o
0,3 3 10 20V
1) Capacitance groups, coded 1, 2

Code CT (2V) CT (BV)
1 43 -45 18.2-23.2pF
2 44.5 - 46.5 18.8 - 24 pF
Siemens 159
Silicon Diode Array BGX50A
• Bridge configuration
• High-speed switch diode chip

BGX50A U1 Q62702-G35 Q62702-G38 SOT 143

Surge reverse voltage VRS 50 V
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
160 Siemens
BGX50A
at TA = 25 DC, unless otherwise specified

Forward voltage VF - - 2,6 V
(two diodes connected in series)
IF=100mA
Reverse current IR
VR = 50V - - 0,2 t-tA
VR = 50 V, TA = 150°C - - 100 flA

VR = 0, f= 1 MHz
Reverse recovery time t rr - - 6 ns
IF = 10 mA, IR = 10 mA, RL = 100 n
OUT

tr = 0,6 ns, Ri = 50 n tr = 0,35 ns
C:5 1 pF
Siemens 161
BGXSOA
Total power dissipation Ptot = (( TA) Reverse current fR = ((TA)

mW nA
400 105
5
VR =70V
V' '/
max.
r\
1"\ 7O~A/
200
I\.
, 1\
5
25V
100
typo
1,\ II
1'\ I)il
o 10 '
o 50 100 150 °c o 50 150 0 C
-lj.
Forward current IF = ((V F) Pesk forward current f FM = ((t)

TA = 25°C TA = 25°C
mA
150
I/D= 0.005
0.01
;/°.02
rl0 5
II II r1?1
0.2
100
typo [1 max.
II t>
j
50
11
lO- 1
7/
7
II
J
S
D=+ tt£r-
TIIIIIIIIIIIIIIII
T
o 10-2
o 0,5 1,0 1,5 V 10-6 10-5 10-4 10- 3 10-2 10-1 10° 5
-\of -t
162 Siemens
BGX50A
Forward voltaga VF = ((TA)
V
1,0
\of
ill
I F = 100 rnA r--_
I I I-
t ~~
10 rnA I'r-.
r-..
0,5
~I' 'r-..r-.
l-
Ir-k
I- 0.1 rnA
t'--r---
1', r---r-.
t'--
"
o
o 50 150 O(
Siemens 163
Silicon Switching Diode 5MBD 914
c{J.

5MBD 914 S5D Q68000-A6418 Q68000-A625 SOT 23
Maximum ratings
t= 111S
TA = 25°C
Thermal resistance RthJA :s; 450 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
164 Siemens
5MBD 914
at TA = 25°e, unless otherwise specified

I(BR) = 100!lA
IF = 10 mA
Reverse current IR
VR = 20V - - 25 nA
VR = 75 V - - 5 flA
VR = 20 V; TA = 150 0 e - - 30 flA
VR = 75 V; TA = 150 0 e - - 50 flA

Diode capacitance CD - - 2 pF
VR = 0, f = 1 MHz
IF = 10 mA, IR = 10 mA
VR = 1 V, RL= 100n
OUT

tr = 0,6 ns, Ri = 50 n tr = 0,35 ns
C ~ 1 pF
Siemens 165
5MBD914
Total power dissipation Ptot = f (TA) Reverse current I R = f ( TA)
mW nA
400 105
5
VR =70V
r\ 1/ 1/
max.
~.
7O~J'/
200
5
25V
100 r\
r\
typo
1/
a 10' J
a 50 100 150 200 ec o 50 100 150 0 C
-T"
Forward current IF = f(vd Peak forward current IFM = f(t)

TA= 25°C TA= 25°C
mA
150
I 5
!/D=OOOS
0.01
~/?02
r/~05
II Ir ll
0.2
100 J
typo I max.
i 5
i
50
,
I
i D=i&
1/ ./ IIIIII III1 11111 I I
o 10- 2
o a,s 1,5 V 10-6 10-5 10-4 10- 3 10- 2 10-' 10° s
-t
166 Siemens
5MBD 914
Forward voltage VF = !(TA)
V
1,0
ill I-
IF= 10~ iA
r-t-
f W.
10 mA ............. r---
I I
0,5
ij--, r-....
r-t. "
- O,1mA
I'-.~
,
'I'-.
o
o 50 100 150 O(
Siemens 167
Silicon Switching Diode Array 5MBD 2835/36

• Common anode
A f7JwCl
~C2
versions in bulk versions on 8-mm tape
5MBD 2835 SA3 upon request upon request SOT 23

Maximum ratings
Parameter Symbol 5MBD2835 5MBD2836 Unit
Reverse voltage VR 30 50 V
Peak reverse voltage VRM 75 75 V
Surge forward current I FS 4.5 A
t= 1 fls
]A = 25°C
Storage temperature range r.tg - 65 ... +150 °C
Thermal resistance
junction - ambient RthJA :S; 450 K/W
package mounted on alumina
15mm x 16.7mm x 0.7mm
168 Siemens
5MBD 2835/36
Characteristics
at T,. = 25 ce, unless otherwise specified
DC characteristics Symbol min. typo max. Unit
Breakdown voltage VIBR )

= 100 jJA
IIBR) 5MBD 2835 75 - - V
5MBD 2836 75 - - V
Forward voltage VF
IF = 10 rnA - - 1000 mV
I F = 50 rnA - - 1000 mV
I F = 100 mA - - 1200 mV
Reverse current IR
VR = 30 V SMSD 2835 - - 100 nA
VR = 50 V 5MBD 2836 - - 100 nA
AC characteristics Symbol min. typo max. Unit
V R = 0, f= 1 MHz
IF = 10 rnA. IR = 10 rnA, RL = 100 Q
Speci men
"
Lt7.t
IF I
/JmA
Pulse generator: Oscillograph: R= 50 Q
tp = 100 ns, D = 0.05 t, = 0.35 ns
t, = 0.6 ns, R; = 50 Q Cs. 1 pF
Siemens 169
5MBD 2835/36
Total power dissipation Ptot = f I TA ) Reverse current IR = f I TA )

mW nA
400 lOs
5
i.. max.
\.'R=70V
~ ~
7O~)rJ
200
5
2SV
r\
100 r\
5 typo
1/
o 10'
I
o 50 100 150 200 ·C o 50 100 150°C
-7A
Forward current IF = f I ~) Peak forward current IFM = fIt)

TA = 25°C TA = 25°C
mA A
150 102
©
I /0=0.005
5 0.01
0.02
II
/?os
'll
0.2
100 I 5
typo Imax.
~
i
50
lO-
, =
1/
J
Ii S
O=-f tl£rL
11111111/1111111
o 10-2
o 0,5 1,5 V 10-6 10-5 10-4 10-3 10-2 10-' 100 5
-t
170 Siemens
5MBD 2835/36
V
1,0
m
I F= 10~ ~A
r-_
1-1-1-1-
.~
10 rnA t-t-..
0,5
~ ..
r-l ....
t-t-..
- I- O,1rnA
t-
1' ............ ....... .....
t-.....
o
o 50 100 150 ·c
Siemens 171
Silicon Switching Diode Array 5MBD 2837/38

• Common cathode
Type Marking OrC\ering code for Ordering code for Package


Maximum ratings
Parameter Symbol 5MBD 2837 5MBD 2838 Unit
Reverse voltage VR 30 50 V
Peak reverse voltage VRM 75 75 V
Surge forward current I FS 4.5 A
t= 11.1s
~ = 25°C
Storage temperature range T.tg - 65 ... +150 °C
Thermal resistance
junction - ambient RthJA :::;;450 KjW
15 mm x 16.7 mm x 0.7 mm
172 Siemens
SMSD 2837/38
Characteristics
at ~ = 25 cC, unless otherwise specified
Breakdown voltage V(BA)

= 100 iJA
I(BA) 5MBD 2837 75 - - V
5MBD 2838 75 - - V
Forward voltage VF
IF = 10 rnA - - 1000 mV
I F= 50 rnA - - 1000 mV
IF = 100 rnA - - 1200 mV
Reverse current IA
VA= 30 V 5MBD 2835 - - 100 nA
VA = 50 V 5MBD 2836 - - 100 nA
Diode capacitance CD - - 4 pF
VA = 0, f= 1 MHz
Reverse recovery time t" - - 6 ns
IF = 10 rnA. IA = 10 rnA. RL = 100 Q
measured at IA = 1 rnA
rt?t"
Specimen
IF t
;jmA
tp = 100 ns, D = 0.05 t,= 0.35 ns
t, = 0.6 ns, Rj = 50 Q C::;;; 1 pF
Siemens 173
5MBD 2837/38
Total power dissipation P'o' = f ( TA ) Reverse current IR = f (h)

mW
400
P.o, VR =70V
/ V
1300
max.
~. /,/
70~/J
200
\
25V
\
100
\
typo
/1/
o J
o 50 100 150 200 ·C 50 100 150 0 C
Forward current IF = f ( l'F) Peak forward current IFM = f(t)

TA =25°C TA = 25°C
mA A
150 10 1
©
I /D=0.005
5 0.01
;0-02
'lOS
l'l1
0.2
100
I
typo jmax.
~
Ii
Ii
50
,
i
L t~
D=..1..
T
L.-' V 11111111/1111111
o 10-z
o 0,5 1,5 V 10-6 10-5 10-4 10- 3 10-1 10-1 10° 5
-t
174 Siemens
5MBD 2837/38
Forward voltage VF = f ( TA )
V
1,0
t.U
h= 100 rnA I-
f .J
I I
--
10 rnA ..........
r-.r-.
..... .....
0,5
~ .....
r.k r-. ..... .....
i-f- 0,1 rnA
t'-..t'-.. i'
............
o
o 50 100 150 0(
Siemens 175
Silicon Switching Diode 5MBD6050
cr(}
SMSD 6050 S5A upon request upon request SOT 23
Maximum ratings
Surge forward current I Fs 4.5 A
t= 1 iJs
1A = 25°C
Storage temperature range T.tg -65 ... +150 °C
Thermal resistance
junction - ambient RthJA :5 450 K/W
15rnm x 16.7rnm x 0.7mm
176 Siemens
5MBD6050
Characteristics
at ]A = 25 °C, unless otherwise specified
Breakdown voltage VIBR ) 70 - - V

= 100 IJA
IIBR)
Forward voltage VF
IF = 1 rnA 550 - 700 mV
I F= 100 rnA 850 - 1100 mV
Reverse current IR
VR= 50 V - - 100 nA
Diode capacitance Co - - 2.5 pF

VR= 0, f= 1 MHz

IF = 10 rnA, IR = 10 rnA, RL = 100 Q
Specimen
90%

tp = 100 ns, D = 0.05 t,= 0.35 ns
t,= 0.6 ns, R = 50 Q
j C~l pF
Siemens 177
5MBD 6050
Total power dissipation Pl0l = '( TA ) Reverse current IR = '(TA )
mW nA
400 105
5
If.t VR =70V
f-.
V
\300
r\
'"
max.
L..-
I -I-' 1/
7°~A/
200
5
1'\ 25V
100
1\
typo
l)iJ I
o II
o so 100 150 200 ·C 50 100 150 ·C
Forward current h = '( ~) Peak forward current hM = f(t)

TA =25°C TA =25°C
mA A
150 10 2
©
II 1/ 0 =0.005
5 0.01
;F02
r;~'OS
II I/rll
0.2
J
100
typo rT max.
""~
Ii
Ii
so
lO- 1
;
t...,.. j/
7 S O=...l
II [Ii
tt£r-
T
11111 11111 I T I
o 10- 2
o 0,5 1,0 1,5 V 10-6 10- 5 10- 4 10- 3 10- 2 10-1 10° S
---\If ---f
178 Siemens
5MBD6050

V
1,0
W
i
IF= 100 rnA t--t-- t--I-
I I
W.
10 rnA I-r-.
.... 1-
0,5
~r--. I-r-- ....
~ i"--r-.. !-..
r-r- r- 0,1 rnA
..... r-..
....
r--. .....
o
o 50 100 150 DC
Siemens 179
Silicon Switching Diode Array 5MBD 6100

• Common cathode

5MBD 6100 S5B upon request upon request SOT 23
Maximum ratings
Surge forward current I Fs 4.5 A
t= 11.1s
1A = 25°C
Thermal resistance
junction - ambient RthJA :5 450 K/W
15 mm x 16.7 mm x 0.7 mm
180 Siemens
SMSD 6100
Characteristics
at ~ = 25°C, unless otherwise specified
Breakdown voltage V(SRI 70 - - V

= 100 I1A
I(SRI
Forward voltage VF
IF= 1 rnA 550 - 700 mV
IF= 100 rnA 850 - 1100 mV
Reverse current IR
VR = 50 V - - 100 nA
Diode capacitance CD - - 2.5 pF

VR = 0, f= 1 MHz

= 10 rnA. fR = 10 rnA. RL = 100 Q
IF
Specimen

tp = 100 ns, D = 0.05 t,= 0.35 ns
t, = 0.6 ns, Rj = 50 Q CS; 1 pF
Siemens 181
5MBD 6100
Total power dissipation Ptot = f ITA) Reverse current IR = f I TA )

mW nA
400 105
5
~.I VR =70V
V
1300 "'"
max.
iii)
7O'{ifl
200
5
I'
1\ 25V
100
5 "-iyp.
If
o AI
o 50 100 150 200 ·C 50 100 150 0(
-7A
Forward current h = f I lip) Peak forward current IFM = fIt)

TA = 25°C TA =25°C
mA
150
A
10 2
©
I 1/ 0 =0.005
5 0.01
0.02
II rl 05
rl' : EE
0.2
100
I 5
typo II max.
~
Ii
II
50
10-1
Ii 5
0=+t~
o
l/
10-2
Iiii 11111 TI 1111 I I
o 0,5 1,0 1,5 V 10.6 10-5 10-4 10- 3 10-2 10-1 100 S
-Vf -t
182 Siemens
5MBD 6100
Forward voltage VF = f (h)
V
1,0
-WJ
I f = 100 rnA
I I
t-
--
..J.
10 rnA r-. . . .
t-r-.
0,5
ir} ...... 1"'-
~ r-. . . . ......
-- 0,1 rnA
~r--. I""'-r-.
'~
o
o 50 100 150 O(
Siemens 183
Silicon Switching Diode Array 5MBD 7000
~C1
• Connected in series
C2,A1
f;jfo A2

versions in bulk versions on a-mm tape
5MBD 7000 S5C upon request upon request SOT 23
Maximum ratings

Surge forward current IFS 4.5 A
t= 1I.Js
1A = 25°C
Thermal resistance
junction - ambient RthJA :S450 K/W
15mm x 16.7mm x 0.7mm
184 Siemens
5MBD7000
Characteristics
at ~ = 25 °C, unless otherwise specified
Breakdown voltage VIBR ) 100 - - V
Forward voltage VF
IF = 1 rnA 550 - 700 mV
IF = 10 rnA 670 - 820 mV
IF = 100 rnA 750 - 1100 mV
Reverse current IR
VR = 50 V - - 300 nA
VR = 100 V - - 500 nA
VR = 50 V, TA = 125 °C - - 100 IJA
VR = 0, f
= 1 MHz
IF = 10 rnA,
IR = 10 rnA, RL = 100 Q
Speci men
rr
~
h t
90"!.
/JmA
Pulse generator: Oscillograph: R = 50 Q
tp = 100 ns, D = 0.05 t, = 0.35 ns
t, = 0.6 ns, Rj = 50 Q C:::; 1 pF
Siemens 185
5MBD7000
Total power dissipation Ptot = 'I TA ) Reverse current IR = 'I TA )

mW nA
400 105
5
Ifot VR =70V
'/ I--'
1\
1300
max.
1/
7O~AJ
200
5
1'\
1\ 25V
~
100
typo
1/ I
o AI
o so 100 150 200 O( so 100 150 0(
-~
Forward current IF = 'I ~) Peak forward current IFM = 'It)

TA = 25°C TA = 25°C
rnA A ©
150 10 2
I ./0=0.005
5 0,01
0.02
1I?·05
II 1/f;~.1
0.2
100
IJ
. typo II max .
1QO
~
Ii 5
so
1 =
r, 0=+ t~
L..o- 1/ 1111111/1111111
o 10-2
o 0,5 1,5 V 10-6 10- 5 10-4 10- 3 10-2 10-1 10° 5
-t
186 Siemens
5MBD7000
V
1,0
ill
f
I F= 100 rnA
.w.
I I
I-r-.
---
10 rnA l-
0,5
i;}, "r-.
[)-k 1', ,
0,1 rnA
r"1' r-..
"
o
o 50 100 150 .(
Siemens 187
Transistors
Siemens 189
PNP Silicon AF Transistors BC807
BC808
• For general AF applications

• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC 817, BC 818 (NPN)
Type Marking Type Marking Ordering code Package

11) BC 807-16 5A I1)BC 808-16 5E Refer to index SOT 23
11) BC 807-25 5B I1)BC 808-25 5F
11) BC 807-40 5C 11) BC 808-40 5G
Maximum ratings
Parameter Symbol BC807 BCaOa Unit
Collector-emitter voltage VCEO 45 25 V
Collector-base voltage VCBO 50 30 V
Emitter-base voltage VEBO 5 5 V
Collector current Ic 500 mA
Peak collector current ICM 1 A
Base current IB 100 mA
Peak base current IBM 200 mA
TA = 25 DC

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
11) Preferred type
Siemens 191
BC807
BC808

Collector-emitter breakdown voltage V(BR) CEO
Ic = 10 rnA
BC807 45 - - V
BC808 25 - - V
Collector-base breakdown voltage V(BR)CBO
Ic = 100 IlA
BC807 50 - - V
BC808 30 - - V
Emitter-base breakdown voltage V(BR)EBO 5 - - V
IE = 10 IlA
Collector cutoff current ICBo
VCB = 25 V - - 100 nA
VCB = 25 V, TA = 150°C - - 5 IlA
Emitter cutoff current lEBO - - 100 nA
VEB = 4 V
DC current gain') hFE
Ic = 100 rnA, VCE = 1 V
BC 807-16, BC 808-16 100 160 250 -
BC 807-25, BC 808-25 160 250 400 -
BC 807-40, BC 808-40 250 350 630 -
I c = 300 rnA, VCE = 1 V
BC 807-16, BC 808-16 60 - - -
BC 807-25, BC 808-25 100 - - -
BC 807-40, BC 808-40 170 - - -
Collector-emitter saturation voltage ') VCEsat - - 0,7 V
I C = 500 rnA, I B = 50 rnA
Base-emitter saturation voltage') VBEsat - - 2 V
I C = 500 rnA, I B = 50 rnA

Transition frequency fT - 200 - MHz
Ic = 50 rnA, VCE = 5 V, f= 20 MHz
Output capacitance Cob - 10 - pF
VCB = 10V, f= 1 MHz
Input capacitance Cib - 60 - pF
VEB = 0,5 V, f= 1 MHz
') Pulse test: t:5, 300 Ils, D = 20/0.
192 Siemens
Bca07
Bcaoa
Total power dissipation Ptot = f (TA) Transition frequency fT = f (I cl

VCE = 5V
mW MHz
400 10l
f\ot
r-~
t 300
I\, ./
200 \
\.
5
I
100
I\,
\. 2
\
°° 50 100 150 0 ( 5 10'
Pulse handling capability rth = f(t) Collector cutoff current leBO = f (TA)
(standardized) VCBo=60V
K
W
10°
Ii,
r
1
~
III I I
0,5
0,2 max. V
.-
0,1
0,05
0,Q2
0,01
0,005 v' Vtyp.
1 0=0 1111
10 '
10- 3
0=;
'"
~ '"
T
10-6 10- 5 10- 4 10- 3 10- 1 10- 1 10° 10' s 50 100 150 O(
-f
Siemens 193
BC807
BC808
Base-emitter saturation voltage Ie = '( VBE sat) Collector-emitter saturation voltage

hFE = 10 Ie = '(VCEsar)
hFE = 10
rnA rnA
1Ql 103
5 150 0 : " f-_ 25°( -- -- --
150 0 ( --
/-50 0 [
/h "" "25°(
,"-<50 0 (
"r! ._ ...
~
f----
10' 10'
-
-- - - f---- - -Ii - f----
r
I
-- -f----
-f-
-- - - f----
, ,
--f--- .. j -1.]
j - -
2 4 V 200 400 600 BOO mV

VeE sot --liEsat
DC current gain h FE = '(l cl

VCE = 1 V
10 3
5 l00 0 (
r r-t 5 iI(
-:SO °
f-
....
101
100
10-' 5 100 5 1Q1 5 10 2 5 103 rnA
-Ie
194 Siemens
NPN Silicon AF Transistors BC817
BC818

• Complementary types: BC 807, BC 808 (PNP)

m BC 817-16 6A mBC 818-16 6E Refer to index SOT 23
m BC 817-25 6B mBC 818-25 6F
m BC817-40 6C m BC 818-40 6G
Maximum ratings
Parameter Symbol BC817 BC818 Unit
Collector current Ie 500 rnA
Base current Ie 100 rnA
Peak base current IeM 200 rnA
TA = 25°C
Storage temperature range Tstg -65 .. · + 150 °C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 195
BC 817
BC818

Ic = 10 mA
BC 817 45 - - V
BC 818 25 - - V
Collector-base breakdown voltage V(BR) CBO
Ic = 100 !-LA
BC 817 50 - - V
BC 818 30 - - V
Emitter-base breakdown voltage V(BR) EBO 5 - - V
le= 1O !-LA
VCB = 25 V - - 100 nA
VCB = 25 V, TA = 150°C - - 5 !-LA
Emitter cutoff current leBO - - 100 nA
VEB = 4 V

Ic = 100 mA, VCE = 1 V
BC 817-16, BC 818-16 100 160 250 -
BC 817-25, BC 818-25 160 250 400 -
BC 817-40, BC 818-40 250 350 630 -
I C = 300 mA, VCE = 1 V
BC 817-16, BC 818-16 60 - - -
BC 817-25, BC 818-25 100 - - -
BC 817-40, BC 818-40 170 - - -
I c = 500 mA, I B = 50 mA
Base-emitter saturation voltage ') VBEsat - - 2 V
Ic = 500 mA, IB = 50 mA

Transition frequency fr - 170 - MHz
Ic = 50 mA, VCE = 5 V, f= 20 MHz
Output capacitance Gob - 6 - pF
VCB = 10V, f= 1 MHz
Input capacitance Gib - 60 - pF

VEB = 0,5 V, f= 1 MHz
') Pulse test: t:'5 300 !-Ls, D = 20f0.
196 Siemens
BC817
BC 818
Total power dissipation Ptot = f (TA) Transition frequency fT = f (/ cl

VCE = 5V
rnW MHz
400 103
":ot fr 5
"'\
r 300 f
\
\.
v 1\
200
\
5
100
I\,
2
a 1\
a 50 100 5 1Q3 rnA
-7",.
Pulse handling capability rth = f (t) Collector cutoff current I cso = f ( TA)
(standardized) Vcso = 60V
K
Vi
10°
'ih
t
5
1 •
.M'J'\l
'0,5
0,2
0,1
0,05
, 0,02
max. /
0,01
0,005 / /typ.
2 0=0 1111
0= !i
r
1tr-L
t-- r-J
10- 3 ""
10- 6 10- 5 10- 4 10- 3 10- 2 10- 1 10° 10' S 50 100 150 °C
-t -T,.
Siemens 197
BC817
BC818
Base-emitter saturation voltage Ie = f (VBE sad

hFE = 10
mA
10 3
150·(" 1-,25·(
Ie -50·(
1 10 2
5
10-1 L...L--"-L.L--'L--"---'----'L-~__'
o 3 4 V
--VBEsat --VcEsat
DC current gain hFE = f( Ie)

VeE = 1 V
100 L-L...LLLw"----'--'...LLUliL--'-'-'.Lllill'----'--'-'-CUlli
10-1 5 10° 5 W 5 10 2 5 103 mA
-Ie
198 Siemens
NPN Silicon AF Transistors BC846
... BC 850
• For AF input stages and driver applications

• Low noise between 30 Hz and 15 kHz
• Complementary types: BC 856, BC 857,
BC 859, BC 860 (PNP)

BC 846 A 1A (:'3 BC 848 B 1K Refer to index SOT 23
BC 846 B 1B (:'3 BC 848 C 1L
BC 847 A 1E BC849 B 2B
BC 847 B 1F BC849 C 2C
BC 847 C 1G BC 850 B 2F
BC 848 A 1J BC 850 C 2G
Maximum ratings
Parameter Symbol BC846 BC847, BC 848, Unit
BC850 BC849
Collector-emitter voltage VCEO 65 45 30 V
Collector-base voltage VCBO 80 50 30 V
Collector-emitter voltage VCES 80 50 30 V
Emitter-base voltage VEBO 6 6 5 V
Peak collector current ICM 200 mA
Peak emitter current !eM 200 mA
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
(:'3 Preferred type
Siemens 199
BC846
... BC 850

Ic=10mA
BC846 65 - - V
BC 847, BC 850 45 - - V
BC 848, BC 849 30 - - V
Collector-base breakdown voltage V(aR) caD
Ic=10~A
BC846 80 - - V
BC 847, BC 850 50 - - V
BC 848, BC 849 30 - - V
Collector-emitter breakdown voltage V(BR)CES
Ic = 10 ~A, VaE = 0
BC846 80 - - V
BC 847, BC 850 50 - - V
BC 848, BC 849 30 - - V
Emitter-base breakdown voltage V(BR)EBO
lE= 1 ~
BC 846, BC 847 6 - - V
BC 848, BC 849, BC 850 5 - - V
VCB = 30 V - - 15 nA
VCB = 30 V, TA = 150 cC - - 5 ~A
DC current gain hFE
/c= 10~A, VCE=5V
BC 846 A, BC 847 A, BC 848 A - 140 - -
BC 846 B ... BC 850 B - 250 - -
BC 847 C, BC 848 C, BC 849 C, BC 850 C - 480 - -
Ic=2mA, VCE=5V
BC 846 A, BC 847 A, BC 848 A 110 180 220 -
BC 846 B ... BC 850 B 200 290 450 -
BC 847 C, BC 848 C, BC 849 C, BC 850 C 420 520 800 -
Collector-emitter saturation voltage ') VCEsat
Ic = 10 mA, IB = 0,5 mA - 90 250 mV
Ic = 100 mA, Ia = 5 mA - 200 600 mV
Base-emitter saturation voltage ') VBEsat
Ic = 10 mA, Ia = 0,5 mA - 700 - mV
Ic= 100mA, /a=5 mA - 900 - mV
Base-emitter voltage VaE (on)
Ic= 2mA, VCE=5V 580 660 700 mV
Ic=10mA, VCE=5V - - 770 mV
') Pulse test: (:5 300 ~s, D = 2%.
200 Siemens
BC846
... BC 850
AC characferistics Symbol min typ max Unit

Ic = 20 rnA, VCE = 5 V, f= 100 MHz
Vce = 10V, f=1 MHz
Vce = 0,5 V, f= 1 MHz
Short-circuit input impedance h11e
Ic = 2 rnA, VCE = 5 V, f= 1 kHz
BC 846 A ... BC 848 A - 2,7 - kQ
BC B46 B ... BC B50 B - 4,5 - kQ
BC B47 C ... BC B50 C - B,7 - kQ
Open-circuit reverse voltage transfer ratio h12e
BC B46 A ... BC 84B A - 1,5 - 10- 4
BC B46 B ... BC B50 B - 2,0 - 10- 4
BC B47 C··· BC B50 C - 3,0 - 10- 4
Short-circuit forward current transfer ratio h21e
BC B46 A ... BC 84B A - 200 - -
BC B46 B ... BC 850 B - 330 - -
BC B47 C ... BC 850 C - 600 - -
Open-circuit output admittance h22e
BC B46 A .. BC 84B A
0 - 1B - IlS
BC B46 B .. BC 850 B
0 - 30 - IlS
BC B47 C .. BC 850 C
0 - 60 o- ilS
Noise figure F
Ie = 0,2 rnA, VCE = 5 V, Rs = 2 kQ
f= 30 Hz .. ·15 kHz BCB49 - 1,4 4 dB
BCB50 - 1,4 3 dB
f= 1 kHz, M= 200 Hz BCB49 - 1,2 4 dB
BCB50 - 1,0 4 dB
Equivalent noise voltage Vn - - 0,135 IlV
Ie = 0,2 rnA, VeE = 5 V, Rs = 2 kQ
f=10Hz .. ·50Hz
BCB50
Siemens 201
BC846
... BC 850
Total power dissipation Ptot = f (TA) Collector-base capacitance CeBo = f(VeBo)

Emitter-base capacitance CEBO = t(VEBO)
mW pF
400 12
( (SO
~ot
t 300
~h. ('T l lo ~
'~
r-..
'\ 8
I'\: ~ I}(SO
f':
200
" 4
'""'- ~
./ ....... 1--
'ESO
100
1'\
2
o r\ o
o 50 100 150 ·C 10·t
-7;.
Pulse handling capability rth = fIt) Transition frequency tT = t (lo)

(standardized) VeE =5V
K
Iii
10°
tth 5
t
10' t
1111
oI!fAtJ(I
0,5
fy
t
5
I-t--
0,2
0,1
5 0,05 I/V
0,02
0,01
0,005
2
D:O 1111 5
~
tp
D=f ~T .. ;
,
10-3
10-6 10-5 10- 4 10-3 10- 2 10" 10° 10' s 5 10 2 mA
-f
202 Siemens
BC 846
... BC 850
Base-emitter saturation voltage Ie = f (VBE sat) DC current gain hFE = f (I e)

hFE = 20 VCE = 1 V
rnA
W2 ~
12S 0(
2S 0 (
_SOO(
l'/
I
r-l000(
~ -
I- 2S 0(
-
~
5 5
L
I
10- 1 10°
o 0,2 0,4 0,6 0,8 1,0 1,2 V 10- 2 5 10- 1 5 10° 5 10' 5 10 2 rnA
-VBEsat -Ie
Collector cutoff current I CBO = f ( TA) Collector-emitter saturation voltage

VCB = 30V Ie = f(VCE,,')
hFE = 20
rnA
10 2
I /
II
_SOO(
I 25°(
max. ~...
./
10'
t-Il; %1000(
/
102
5 5
,. typo
lr!'
5
10- , / ,
o 50 100 1500( 0,1 0,2 0,3 0,4 a,s V
-7; - - - - VCEsaf
Siemens 203
BC846
... BC 850
h parameter he = f(Ie) h parameter he = f(VeE)

VeE = 5V Ie = 2 mA
10 2 2,0
I
h, Ic:1 mA,-
I
I ~11' VcE =5V

l' 1,5
\\
h~,.
~
f--
....
,\ 1,..- .....
'\
~h'2. 1\1,.0-
1,0
.... t-- h'le ;;:;;
1'\
h2~ ..... 7
=h21
~ .// r-..
0,5
....-:-:
h22 •
o
o 10 20 30 V
-Ie --VcE
NOise figure F = f ( VeE) Noise figure F = f (f)

Ie = 0,2 mA, Rs = 2 kQ, f= 1 kHz Ie = 0,2 mA, Rs = 2 kQ
dB dB
20 r--"TnTITr-'--rTTTTm--.TTnnn 20
I 15 1-t-+++tfttt---++H+tt++-t-++t+H+1
10
_\
O'--'-'-J-LllilL--L-L1..LllllL.-LLLJLlillJ
10·' 5 10' 5 10 2 V
---VcE
204 Siemens
BC846
... BC 850
Noise figure F = f (I cl Noise figure F = f (I e)

VCE=5V, f= 120Hz VCE =5V, f= 1 kHz
dB dB
20 20
I
r- !?s=lMfl 100kfl 10kfl/
I Rs =lMQ 100 k II 10kQ
J / \ /
II
10 10
\
\
J sOOQ lkQ
I
IJ
5 5
1 II
J L 1\
'\. II' SOOfl
'"
lkQ
11111 I'- I III
11111 ", ".I. 11111
r- 11111
o-
10- 2 10' mA 10-3 10- 2
-Ie
Noise figure F= f(Ie)

VCE = 5 V, f= 10 kHz
dB
20 -
-
-
-
Rs=lMQ
1100k
I I I II
10
/ II II
II II
OOQ 10kQ
I\,
5
lkQ\. J
111111
J IIiU ,..:;
JaIl"..
o
10-3 10- 1
-Ie
Siemens 205
PNP Silicon AF Transistors BC856
... BC 860

• Complementary types: BC 846, BC 847,
BC 849, BC 850 (NPN)

BC 856 A 3A rn BC 858 C 3L Refer to index SOT 23
BC 856 B 3B BC 859A 4A
BC 857 A 3E BC 859 B 4B
BC 857 B 3F BC 859 C 4C
BC 857 C 3G BC 860 B 4F
BC 858 A 3J BC 860C 4G
BC 858 B 3K
Maximum ratings
Parameter Symbol Be 856 Be 857, Be 858, Unit
BC860 BC859
Collector-emitter voltage VCES 80 50 30 V
Peak emitter current IEM 200 mA
TA = 25°C
Storage temperature range Tstg -65·.·+150 °C
Thermal resistance RthJA :S 375 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
rn Preferred type
206 Siemens
BC 856
... BC 860

Collector-emitter breakdown voltage V(SR) CEO
Ic = 10 mA
BC856 65 - - V
BC 857, BC 860 45 - - V
BC 858, BC 859 30 - - V
Collector-base breakdown voltage V(SR) cso
Ic= 10 !lA
BC856 80 - - V
BC 857, BC 860 50 - - V
BC 858, BC 859 30 - - V
Collector-emitter breakdown voltage V(SR) CES
Ic=10!lA,VsE=0
BC856 80 - - V
BC 857, BC 860 50 - - V
BC 858, BC 859 30 - - V
Emitter-base breakdown voltage V(SR) ESO 5 - - V
h=1!lA
Collector cutoff current Icso
Vcs = 30V - 1 15 nA
Vcs = 30 V, TA = 150°C - - 4 !lA
DC current gain hFE
Ic = 10 !lA, VCE = 5 V
BC 856 A ... BC 859 A - 140 - -
BC 856 B ... BC 860 B - 250 - -
BC 857 C ... BC 860 C - 480 - -
Ic=2mA, VCE=5V
BC 856 A ... BC 859 A 125 180 250 -
BC 856 B ... BC 860 B 220 290 475 -
BC 857 C ... BC 860 C 420 520 800 -
Ic= 10 mA, Is = 0,5 mA - 75 300 mV
Ic = 100 mA, Is = 5 mA - 250 650 mV
Base-emitter saturation voltage ') VSEsat
Ic = 10 mA, Is = 0,5 mA - 700 - mV
Ic = 100 mA, Is = 5 mA - 850 - mV
Base-emitter voltage VSE(on)
Ic = 2mA, VCE=5V 600 650 750 mV
I c = 10 mA, VCE = 5 V - - 820 mV
') Pulse test: t::5, 300 !ls, D = 20/0.
Siemens 207
BC856
... BC 860

Ic = 20 rnA, VCE = 5 V, f= 100 MHz
VCB = 10V, f=1 MHz
VCB = 0,5 V, f= 1 MHz

BC 856 A .. · BC 859 A - 2,7 - kO
BC 856 B ... BC 860 B - 4,5 - kO
BC 857 C ... BC 860 C - 8,7 - kO
BC 856 A··· BC 859 A - 1,5 - 10--
BC 856 B .. · BC 860 B - 2,0 - 10--
BC 857 C ... BC 860 C - 3,0 - 10--
I c = 2 rnA, VCE = 5 V, f = 1 kHz
BC 856 A ... BC 859 A - 200 - -
BC 856 B ... BC 860 B - 330 - -
BC 857 C ... BC 860 C - 600 - -
BC 856 A ... BC 859 A - 18 - ~S
BC 856 B ... BC 860 B - 30 - ~S
BC 857 C ... BC 860 C - 60 - ~S
Noise figure F
Ic = 0,2 rnA, VCE = 5 V, Rs = 2 kO
f=30Hz .. ·15kHz BC859 - 1,2 4 dB
BC860 - 1,0 3 dB
f= 1 kHz, M= 200 Hz BC859 - 1,0 4 dB
BC860 - 1,0 4 dB
Equivalent noise voltage Vn - - 0,110 ~V
Ic = 0,2 rnA, VCE = 5 V, Rs = 2 kO
f = 10Hz ... 50 Hz BC860
208 Siemens
BC856
'" BC 860
Total power dissipation Ptot = f (TA) Collector-base capacitance CCBO = f(VCBO)

Emitter-base capacitance CEBO = f (VEBO)
mW pF
400 12
~ot
I-~
'\.
t 300
I\.
"-
}CBO
200
1\
""- I"- ~
\ .....
\
100
1\
4
""
[E~O 1""--.....
o 1\
o 50 100 150 0 (
--T,
Pulse handling capability rth = f (t) Transition frequency fT = f (l c)

(standardized) VeE = 5V
K
W
100
, • '0,5
0,2
0,1
0,05
, 0,02
I
/
,;'
-
0,01
0,005
0:0 1111
10- 2
~ ---J tp I---
o:1-ILJL
T I--- T-i
10- 3 '"
10- 6 10- 5 10- 4 10,3 10'2 10" 10° 10' s
-t
Siemens 209
BC856
, .. BC 860
Base-emitter saturation voltage Ie = '(VBE sat) Collector-emitter saturation voltage

hFE = 20 Ie = '(VcEsat)
hFE = 20
rnA rnA
W1 W1
~ ~ 5 / /
12soe V
2Soe '1 IV / -sooe
- r-
r -sone
{:;~ t II ./
VV
25°(
100 0 e
5 5
II
lO-
, II ,
a 0,2 0,4 0,6 0,8 1,0 1.2 V 0) 0,2 0,3 01+ 0,5 V
---VBE sat ~\.hsat
Collector cutoff current I CBO = '( TA) DC current gain hFE = '(lei
VCB=30V VCE = 1 V
100 0 e
_25·
~
max. " 0/
10 2
5
~.. typ;
5
=
-
w'
5
5
=
=
lif' -
r-
5
!--
, ./ 100 '-:c
50 100 150 0( 10-2 5 10-' 5 10° 5 10' 5 102 mA
-JA -Ie
210 Siemens
BC856
... BC 860
h parameter he = f (I e) h parameter he = f (VeE)

VeE = 5V Ie = 2 rnA
10 2 2,0
I
I
h. Je=12~A
h l1 -
i.-
1 h". liE =5V n t..-
1\ V
'(
V
1,0 1\
I\. h12 • y~
I'
" """"'r-. ~ I/ V i"'I vi
......-
h ._+--
22
5 0,5
~h2'.
, h2o/
o
o 10 20 30 V
-Ie - - liE
Noise figure F = f(VeE) Noise figure F = f (f)

Ie =0,2mA, Rs = 2kn, f= 1 kHz Ie = 0,2 rnA, Rs = 2 kn, VeE = 5 V
dB dB
20 ~~TTnmr---.-,-,-,crrrr'--"TT; 20
! 15 ~+4+H~-+++Htt~~+#~
10
1\
OL-L.L-liLWL--L-LLUWL-LlJ....llillJ o
10-' 5 10' 5 10 2 V 10-2
--liE
Siemens 211
BC8S6
···BC860
Noise figure F = f (I oj Noise figure F = f (Io)

VCE=5V, f= 120Hz VCE = 5 V, f= 1 kHz
dB dB
20 20
r- ~s=lMQ 100kQ 10kQ/ /

/ I Rs =lMQ lOOk 110kQ
II \ I
II
10 10
, 500Q \
1kQ
I
1
II I
5
.I I
'" 1/ 1kQ
IIIII
I' " i 500
I
o
10-3
- 11111
11111
101 mA
o-
10-3
'" [".ol I
I
1Q1 mA
Noise figure F = f (Io)

VCE = 5 V, f= 10 kHz
dB
20
Rs=lHQ
I
[lOOk
[ / I II
10 !I III
III
OQ 10kQ
\.
5
lkQ\. /
lUll
IIIU
uaw~
o
10- 3
212 Siemens
PNP Silicon Darlington Transistors BCP 28; BCP 48

• Complementary types: BCP 29/49 (NPN) E
Type Marking Ordering code (12-mm tape) Package"

BCP 28 BCP 28 Q62702 - C1234 SOT-223
BCP 48 BCP 48 Q62702 - C1235 SOT-223
Maximum Ratings
Parameter Symbol BCP28 BCP48 Unit
Collector-base voltage Vcso 40 80 V
Emitter-base voltage VESO 10 10 V
Base current Ie 100 mA
Peak base current ISM 200 mA
Total power dissipation, TA $ 25°C 1) P'O' 1.5 W
Junction temperature T, 150 ·C
Storage temperature range T519 -65 to + 150 ·C
Thermal Resistance
Junction - ambient 1) s83.3
') Package mounted on an epoxy printed circuit board 40mm x 40mm x 1.Smm
Mounting pad for the collector lead min 6cm 2
.) For detailed dimensions see chapter Package Outlines
Siemens 213
BCP 28, BCP 48
Characteristics
Parameter Unit
DC Characteristics
Collector-emitter I;>reakdown voltage VCBRlCEO
Ic = 1mA, Ie = 0 BCP 28 30 - - V
BCP 48 60 - - V
Collector-base breakdown voltage 1) VceRlCBo

Ic = 100 jlA, Ie = 0 BCP 28 40 - - V
BCP 48 80 - - V
Emitter-base breakdown voltage VCeR)EeO

IE = 10 jlA, Ic = 0 10 - - V
Collector-base cutoff current Iceo
Vce=30 V,/E=O BCP 28 - - 100 nA
Vce=60 V,/E=O BCP 48 - - 100 nA
Vce = 30 V, IE = 0, TA = 150°C BCP 28 - - 10 \1 A
Vce = 60 V, IE = 0, TA = 150°C BCP48 - - 10 \1 A
Emitter-base cutoff current 'EBO
VEe =4 V, Ic =0 - - 100 nA
DC current gain 1) hFE
Ic=100jlA, VCE=lV BCP 28 4000 - - -
BCP 48 2000 - - -
Ic =10mA,VCE =5V BCP 28 10000 - - -
BCP 48 4000 - - -
Ic =100mA, VCE=5V BCP 28 20000 - - -
Ic = 500 mA,VCE = 5 V
BCP
BCP
48
28
10000
4000
-
-
-
-
--
BCP 48 2000 - - -
Collector-emitter saturation voltage VCEsal
Ie = 1OOmA.lB = 0.1 mA - - 1.0 V
Base-emitter saturation voltage VBEsal
Ie = 100mA,/e = O.lmA - - 1.5 V
AC Characteristics
Transition frequency fT
Ic=50 mA, VCE = 5V,f=100MHz - 200 - MHz
Output capacitance Cob
VCB = 10 V,f= 1 MHz - 8 - pF
1) Pulse test conditions: t ~ 300\1s; D = 2%
214 Siemens
BCP 28; BCP 48
Total power dissipation P101 = '(TA) Collector cutoff current ICBO = '(TA )
VCB = VCE max
nA
2.0 10'
W f-
1--
r= ...-.1-
-l- I-- -- - 1-;- 1-1-
I-
./
h
I-t\
I-
-
I- .
1--' -- ?~ r\:- -- ,/ max.
I-
1.0 -- - I-I-
- - -I- - \ -
5
- 1-
- - - - - I- - - 1-1-
- - 1-.I- -- ~~ Vtyp.
0.5 I- --!-
K H- -
- --+- 1-- - r - rs: -1-1-
- - \. I- -
- -- -- .- -- . - -I-
-- -- - -- - -- -- -- -
\
o
o so 100 ·C lS0 50 100 150 'C
--r. --T,.
Transition frequency 'T = '(I~)

MHz VCE = 5 V
10 1 r=-- -- .-- --
,--
1--'
I--
1---
r-
'1 S -
- --
1 ,- 1- --
r-.
,/
~
7
1~
101 , - -
I-
-
-
I-- -
'- --
Siemens 215
BCP 28; BOP 48
DC current gain hFE = ((Ie)

Vce=5V
10'
F F-
~ ~ I--
r
5 ~ I--
I-- -
I- -
I- -
~
~
i===
~
~
5
~ -55"(
-
'--
10'
C:$$==j-
10' 1= ==~-~:-:1:1j~J~
. :: .-- : : I~--+-
c.= -- - :::::
---1-+-1
5 -- -- ~ ==1 ~
- I1tII11I 1111111
S I-~ -- ,-- -1-1-
I-- 1- - - - - - -- - -+-1-
11111111 1111111 100'-'"--'-~- __ •.~ _ _ _ ._L- _ _ ' -
101
10" 5 100 5 10' 5 101 5 10 1 mA o 0.5 '_0 V 1.')
- /c - --- \'cE.o'
Collector-base capacitance Cob = (Vca) B•••·.mltt.r .aturatlon voltage Ie = ((VaE sat)

pF Emitter-base capacitance C'b = (VEa) hFE" 1000
10
CUD
IC (801
t "'-
"~ I"- .... ~80
5 ,
~
C EBO '"
'-- -- 10'
s
F3===t::J=lI=:f=
~ ~J;~-
-- ~ -~- ~ =-
- - --
=fr-
- - -- _.- -. -- - l-
I-- I-
~ I-
o 10 0 L-L ......"--'---'.->-."-L J_'-L_J._LJ...J
10" 5 10° 5 10' V o V 3
- Vnol Vclol - Veho'
216 Siemens
NPN Silicon Darlington Transistors BCP 29; BCP 49

• Complementary types: BCP 28/48 (PNP)
E
c
C
B
Type Marking Ordering code (12-mm tape ) Package"

BCP 29 BCP 29 Q62702 - C1236 SOT-223
BCP49 BCP49 Q62702 - C1237 SOT-223
Maximum Ratings
Parameter Symbol BCP 29 BCP49 Unit
Collector current Ic 500 rnA
Peak collector current ICM 800 rnA
Base current Is 100 rnA
Peak base current ISM 200 rnA
Total power dissipation, TA:s 25°C 1) P IOI 1.5 W
Junction temperature T. 150 °C
Storage temperature range T. lg -65 to + 150 °C
Thermal Resistance
Junction - ambient 1) IRU>JA :s 83.3 IKIW
I) Package mounted on an epoxy printed circuit board 40mm x 40mm x 1.5mm
') For detailed dimensions see chapter Package Outfines.
Siemens 217
BCP 29, BCP 49
Characteristics
at TA = 25 ·C, unless otherwise specified.
Parameter Values
min. !typ. max.
IUiilt
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO
Ic = 1mA, IB = 0 BCP 29 30 - - V
BCP 49 60 - - V
Collector-base breakdown voltage V(SR)CBO
Ic = 100 pA, Ie = 0 BCP 29 40 - - V
BCP 49 80 - - V
Emitter-base breakdown voltage V(BR)EeO

IE = 10 pA, Ic = 0 10 - - V
Collector-base cutoff current ICBO
Vce=30 V, IE=O BCP 29 - - 100 nA
Vce=60 V, IE=O BCP 49 - - 100 nA
Vce=30 V,/E=O, TA = 150'C BCP 29 - - 10 11A
Vcs =60 V'/E =0, TA = 150'C BCP 49 - - 10 11A
Emitter-base cutoff current lEBo
VEe = 4 V, Ic = 0 - - 100 nA
Ic = 100 IlA , VCE = 1V BCP 29 4000 - - -
BCP 49 2000 - - -
Ic = 10 mA, VCE = 5 V BCP 29 10000 - - -
BCP 49 4000 - - -
Ic = 100 rnA, VCE = 5 V BCP 29 20000 - - -
BCP 49 10000 - - -
Ic = 500 rnA,VCE = 5 V BCP 29 4000 - - -
BCP 49 2000 - - -
Collector-emitter saturation voltage VCE•AI
= =
Ic 1OOrnA'/e 0.1 rnA - - 1.0 V
Base-emitter saturation voltage VSEsal
= =
Ic 1OOrnA'/e 0.1 rnA - - 1.5 V
AC Characteristics
Transition frequency fr
Ic = 50 rnA, VCE =5 V, f= 100 MHz - 200 - MHz
Vcs=10V,f=1 MHz - 6.5 - pF
1) Pulse test conditions: t :;;;; 30011S; D = 2%
218 Siemens
BCP 29; BCP 49
Total power dissipation PIOI = ({TAl Collector cutoff current Iceo = ({TA)
Vce = VCEmax
nA
~'~~§~f~F-f-3I~~--!~~-I-~~-~;t'~
2.0 - r --,-,-,- - - --- -,-'--1-'-,
W r--~
Ii.. -
1--
re- lceo ~
t 1.5 '-r -1-0-- IIO J
5
=-='='::"'~~:'.~~I= -=:::'={;
H-' .-
~~~~I_-~~+1~-+1-r~'~
1.0 r~ ·~-+-t+-H-!
H-~-+++--l' \ -I-H--H-H
1--- --I---i:-I\----f-
0.5 1-1- - -1-'i.--1I-1--+-1
,:. -'-r ~:--T.: -~

o 50 100·C 150
100 L-L-L-.L..J.-L...L...JL-L-L--'--l-'--...L...JL...J
o SO 100
--r.
150 °c
Transition frequency 'T = ((lel

VCE = 5 V
MHz
10 1 := --
'1
1
5 10' 5 10'mA
Siemens 219
BCP 29; BCP 49
DC current gain hFE = ((Ie) Collector-emitter saturation voltage

VcE =10V =
Ie ((VCE sal)
hFE = 1000
10'
t=
l-
I-
f-
~
~ 1~
5 ,~= I-1'T
-55°(
- -.
- po _. --
:::- -
r=~
I=- -
'-- ---
-. --- -'I---~-
1-- - .--
= - --
- -- -I- -- -I·-H-
-1-1--
I- -1- . -- -- - --f-
f- --- - - . ---- 1-
10l '- 100 _ '-- ___I ___ __
10-' 5 10° 5 10' 5 10 1 5 IO l mA o 0,5 1.0 V 1.5
-Ie _._ ..... - Vr:Esol
Collector-base capacitance Cob ((Vca) = Base-emitter saturation voltage Ie = !(VBE sal)

;Emilter-base capacitance C'b ((VES ) = "FE = 1000
pF
10 10 I = .. -- --- . - ---j--
--- -: --. :: --:.:--- -1=
r=
mA -. - .. -
~..::~.-= -~·;f:il-r·:
---'-liY- -- - -- - f-
l 5 t =~ ~~ ~~~f; ~i :~~ _~ :-- t
1 l Jr.- J~Jr-=-150;c -..
''""
c I- - -, f-
"t--. 10 2 II _il- 2S0 ( I_

S -- ~~ -~I::SOO( - ~
t--. ~BO
t"'-- =~-- ft ~- =I~ _-- , ~__I--- +_f__I
t'!'- ~ r-
[E80
~ .-- - ---
- -- I-
I-
-_.- -- f-
- - .-. -- -- --1-+-1-+-1
10 0 L_..L_L....--'_ _',-'l-'_'--'-~_..L-''--'--'.
5 100 5 10' V o V
- VEBO I VcBol
- - - VBEsol
220 Siemens
PNP Silicon AF Transistors BCP 51 ... BCP 53
• For AF driver and output stages

• Low collector -emitter saturation voltage
• Complementary types: BCP 54 ... BCP 56 E
(NPN)
Type
~ Marking Ordering code (12-mm tape) Package"
BCP 51 BCP 51 062702 - C2 107 SOT-223
BCP 51-10 BCP 51-10 062702-C2109 SOT-223
BCP 51-16 BCP 51-16 062702-C2110 SOT-223
BCP 52 BCP 52 062702 - C2 146 50T-223
BCP 52-10 BCP52-10 062702 - C2 1 12 SOT-223
BCP 52-16 BCP 52-16 062702 - C21 13 SOT-223
BCP 53 BCP 53 062702 - C2 147 50T-223
BCP 53- 10 BCP 53-10 062702-C2115 50T-223
BCP 53-16 BCP 53-16 062702 - C21 16 50T-223
Maximum Ratings
Parameter Symbol BCP51 BCP52 BCP53 Unit
Collector-emitter voltage Vceo 45 60 80 V
Roe:S 1kn VCeR 45 60 100 V
Collector-base voltage Vcoo 45 60 100 V
Emitter-base voltage Veoo 5 V
Collector current Ic 1 A
Peak collector current ICM 1.5 A
Base current 18 100 mA
Total power dissipation, TA:s 25'C I) P IOI 1.5 W
Junction temperature r. 150 'c
Storage temperature range TSI\I -65 to + 150 'c
Thermal Resistance
Junction - ambient I) :S 83.3 IKJW
I) Package mounted on an epoxy printed circuit board 40mm x 40rnrn x 1.5mm
.) For detailed dirnensions see chapter Pack ago Outlines
Siemens 221
BCP 51 ... BCP 53
Characteristics
Parameter Symbol 1 V~lues Unit
1
min. Ityp. Imax. 1
DC Characteristics
Collector-emitter breakdown voltage V1BR)CEO
Ic = 10mA'/B = 0 BCP 51 45 - - V
BCP 52 60 - - V
BCP 53 80 - - V
Collector-base breakdown voltage V1BR)CBO
Ic = 1OOpA,/B = 0 BCP 51 45 - - V
BCP 52 60 - - V
BCP 53 100 - - V
Emitter-base breakdown voltage V1BR)EBO

IE = 10pA.Ic = 0 5 - - V
VcB =30VA=0 - - 100 nA
VCB = 30 V'/E = O,TA = 150 °C - - 20 pA
Emitter-base cutoff current lEBO
VEs =5V,/c =0 - - 10 pA
Ic = 5 rnA, VCE = 2 V 25 - - -
Ic= 150 rnA, VCE=2 V
BCP 51/BCP 52/BCP 53 40 - 250 -
BCP 51/BCP 52/BCP 53-10 63 100 160 -
BCP 51/BCP 52/BPC 53-16 100 160 250 -
Ic = 500 rnA, VCE = 2 V 25 - - -
Collector-emitler voltage 1) VCEsat
Ic = 500 rnA, 18 = 50 rnA - - 0.5 V
Base-emitler voltage 1) VBE
Ic = 500 rnA, VCE = 2 V - - 1 V
AC Characteristics
Transition frequency
Ic = 50 rnA, VCE = 10 V, f= 100 MHz MHz
1-
1) Pulse test conditions: t ;;,; 300ps; D = 2%
222 Siemens
BCP 51 ... BOP 53
Total power dissipation Ptot = '(TA) Trlnlltlon frequency '1 = '(Icl

HHz VCE = 10 V
101EEml33~
2.0..-- - - -r-'~-'-'-'--'--"-r--'-'
W I- - -- -- -I-f- l-
I-- --. - - -1- -I--I-I--I-j
l'1ot I- -- .-- - - -. -- " 5 1-+++-H1fH1--+-~Hl#---t-+-l+H1lI
f
1.5 ~ -+-I--I--l-lf·- l-
f
I- 1\
- - - - \ - - -1--1- 1--
~-=~:.~~y= -~=-;~:---
1.01- - -- ~ -1--1- -1--1-+-1--1
I- - - - - - - -\l-I-j--+-l--t--l-l
I-- -- ---~~44-+-l-+
I-- -- - - - - - - - \ -1-1-1-1-1
====~ : : _-"~I.-
1--- - -- ---- - \.
0.5 1= =- I:::: =- -1-__-1-1--1
I- -- -- - - - - - -- - -1\ - -
I-- - -. - - - --1- ---H\
- - - - -- -.~
lO'~~~WL-L~~lli~-U~
o-
o 50 100 .( 150 10° 5 10' 5 10 1 5 10 J mA
---IA -Ie
DC current gain hFE = '(/ c)

VCE =2 V
10 J 1=
f= E- I- - '= --
f::: l- - I-- -
l-
I- -
100·(
III t-
F2S'
~
5 I--SO'(.
""
10
, F= -
r=
5 f:::-
-
~- -
10°
10° 5 10' 5 10 1 5 10 J 5 10~ mA
-Ie ------r.
Siemens 223
BCP 51 ... BCP 53
Base-emitter saturation voltage Ie = f(VBE .al) Collector-emitter saturation voltage

hFE =10 le=f(VCEsal)
mA mA hFE 10=
100 O(
25°(,
SOO( '/./
"I') h /
'11,// v--::
./ 'K
-5 O(
10 1 10 1
5 5
10' I 10'
5 5
'K)O
o 0,2 0,4 0,6 0,8 1,0 1.2 V 0,2 0,4 0,6 0,8 V
- - VeE sal -\'cEsat
224 Siemens
NPN Silicon AF Transistors BCP 54 ..• BCP 56
• For AF driver and output stages

• Low coll~ctor -emitter saturation voltage
• Complementary types: BCP51...BCP53 (PNP) E

BCP 54 BCP 54 062702 - C2117 SOT-223
BCP 54-10 BCP54-10 062702 - C2119 SOT-223
BCP 54-16 BCP 54-16 062702 - C2120 SOT-223
BCP 55 BCP 55 062702 - C2148 SOT-223
BCP 55-10 BCP 5S-1O 062702 - C2122 SOT-223
BCP 55-16 BCP 55-16 062702 - C2123 SOT-223
BCP 56 BCP 56 062702 - C2149 SOT-223
BCP 56-10 BCP56-10 062702 - C2125 SOT-223
BCP 56-16 BCP 56-16 062702 - C21 06 SOT-223
Maximum Ratings
Parameter Symbol BCP54 BCP55 BCP56 Unit
Rees lk!1 VCER 45 60 100 V
Collector-base voltage Vceo 45 60 100 V
Emitter-base voltage Veso 5 5 5 V
Peak collector current ICM 1.5 A
Base current Is 100 mA
Total power dissipation, TA s25°C II P 'o' 1.5 W
Storage temperature range Tslg -65 to + 150 ·C
Thermal Resistance
Junction - ambient 1) IR 1hJA s83.3
I) Package mounled on an epoxy prinled circuil board 40mm x 40mm. x 1.5mm
Mounting pad lor Ihe colleclor lead min 6cm 2
.) For delailed dimensions see chapler Package Outlines
Siemens 225
BCP 54 ... BCP 56
Characteristics
Parameter
Imax. IUnit
DC Characteristics
Collector-emitter breakdown voltage V\BRICEO
Ic = 1OmA.IB = 0 BCP 54 45 - - V
BCP 55 60 - - V
BCP 56 80 - - V
Collector-base breakdown voltage 1} V\BnICBO
Ic = 1OOpA.lB = 0 BCP 54 45 - - V
BCP 55 60 -
. -
.
V
BCP 56 100 V
Emitter-base breakdown voltage V\BRIEBO

IE = 1OpA.lc = 0 5 - . V
VeB =30 V.lE =0 -. . 100 nA
VCB =30 V.IE =0. TA = 150 ·C - 20 pA
Emitter -base cutoff current lEBO
VEB =5V - - 10 pA
DC current gain hFE
Ic = 5 mAo VCE = 2 V 25 - - -
Ic = 150 mAo VCE = 2 V
BCP 54/BCP 55/BCP 56 40 - 250 -
BCP 54/BCP 55/BCP 56-10 63 100 160 -
BCP 54/BCP 55/BCP 56-16 100 160 250 -
Ie = 500 mAo VCE = 2 V 25 - - -
Collector-emitter voltage 1) VCEsat
Ic = 500 mAo IB = 50 mA - - 0.5 V
Base-emitter voltage 1) VBE
Ic = 500 mAo VCE = 2 V - - 1 V
AC Characteristics
Transition frequency .
Ie =50 mAo VCE = 10V. f= 100 MHz
1) Pulse test conditions: t ::.; 300ps; D = 2%
226 Siemens
BCP 54 .. . BCP 56
Total power dissipation Plol = f (TAl Transition frequency fT = f(lel

MHz VeE 10 V =
101~mIIfE!_
2.0 r-
W I-I-f-
1-- --
~o, .- .- - -- -- - - - " 5
I
f-..- "-'- - - -
1.5 h - i- :-1-
t -~
1.0
f-
i-
-'"1-1- --
[Sf- --
I- -- I-' - -
-I- 1-1- -~-
-
-. l-
2 ~+++H11~-+-H~It~+;~+ffl
f·- -1- -.1- - .\ - 1- -

1--·1-- K
-I- -1-1- - :-·K~- -
0.5 -- -1--- - - - - - -
.._- -- - ._. - ..- -- -- ... ~.-
- - --1----
- 1- --1-.-1-
1--._.
o 10' I--.L-L.LJ..1.WL-L..L..Lll.WIL-.L.J...ll.1.lJJ1
o 50 100 O( 150 100 S 10' 5 10 1 5 10' mA
-TA --II
DC current gain hFE = f(1e) Collector cutoff current leBO = f(TAI

VeE =2 V VeE =30 V
nA
IO J --
1-. t=
-::
i- f--
hI[ S _.-
f r,oo·
101 III
1=15° .-
S _50 0 ( - f---
l- \"
f-
f- - - - -- - -.f- V1ypl-
1-
10' ~:o:::= = =. ==.1= =1~l1.-:~Et§:§
5 F'---:E=i==:::;l'f::+-'=: I-
10'
i= -
S ~.
1= .-
- .
-. I-I-f-- 1-11
-
I- - 5 FF-:
10° ~*~~~~*~~~~ I-t-
I=I=:..~ i- ---- -- 1=- 1=
I-f-V- -I- -t-t--I--t-,H--t-t-l
10° - 10-' 1/
10- 1 S 10° 5 10' S 10 1 S 10 1 mA o 50 100 150°C
-II --/A
Siemens 227
BCP 54 . .. BCP 56
Base-emitter saturation voltage Ie = {(VBe sa') Collector-emitter saturation voltage

hFe = 10 Ie = ((VeE.a,)
mA =
mA h Fe 10
10' - - i-=- '10'
~ 1= =-r= - r= 1-= 1=
=r= .:= f--- r= r=
F
-
5
~ f-:
c-.= f=
-. l00·~-~ =
~ 1=
-::-50·(~ Y- ~ 1-=1-
== -= =
1=
== i- 2S·C 5 r::=-~ cc7
== Y
V- l -i- L 100 "C
101
== -- 1=
1-' ~
I
..
rt
rl- ~ iF-
--
" ~~ ~
f-- i- 5
~ l/2S ·C
-SO ·c
10' .1 10'
-
f~ ~ ~
5 F r= F 1= o.
-:""1- f--- f--- f-- f--
l- I--I- i-
I-- 1-- .. 1-- I - f---
'10 0
o 0.2 0,4 0,6, 0,8 1.0 1.2 V 0,2 0,4 0,6 0,8 V
- - VO£ut -\'cE ..,
228 Siemens
NPN Silicon AF Transis\ors Bep 68
• For general AF application

• High collector gain
• Low collector -emitter saturation voltage E
• Complementary type: BCP 69 (PNP)

-
BCP 68 BCP 68 Q62702-C2126 SOT-223
Maximum Ratings
Parameter Symbol BCP 68 Unit
Collector-emitter voltage V CEO 20 V
VCES 25 V
Collector-base voltage V CBO 25 V
Emitter-base voltage VEBO 5 V
Base current IB 100 rnA
Peak base current IBM 200 rnA
Total power dissipation. TA:s 25°C 1) PIOI 1.5 W
Junction temperature TI 150 °C
Storage temperature range T~lg -65 to + 150 °C
Thermal Resistance
Junction - ambient 1) IR'hJA :s83.3
I) Package mounted on an epoxy printed circuit board 40mm x 40mm x 1.Smm
Mounting pad lor the collector tead min 6cm 2
·1 For detailed dimensions see chapter Package Oullines
Siemens 229
BCP 68
Characteristics
at TA = 25 DC, unless otherwise specified.
Parameter I
Symbol
/max.
I Unit
DC Characteristics
Collector-emitter breakdown voltage V(BR)CeO
Ic = 30mA, IB = 0 20 - - V
Collector-emitter breakdown voltage V1BR)CES
=
Ic = lOIlA, VBE 0 25 - - V
Collector-base breakdown voltage V'BR)CBO
Ic = lOIlA, '13 = 0 25 - - V
IE = lOIlA, IB = 0 5 - - V
VeB =25V · - 100 nA
VC:B = 25 V, TA = 150 DC · · 10 llA
VEI3=5V./c=0 - · 10 Il A
Ic = 5 mA, Vee = 10 V 50 - - -
- .-
Ie = 500 mA, VeE = 1 V 63 400
le=lA,VeE=lV 60 · .
Collector-emitter voltage 1) VCEsal
=
Ie 1 A, IB = 100 mA · - 0.5 V
Base-emitter voltage 1) VBE
Ic =5mA, VcE =10 V · 0.6 - V
Ie = 1A, VCE = 1V - · 1
AC Characteristics
I·
Ie = 100 mA, VeE = 5 V, f= 100 MHz MHz
1) Pulse test conditions: t 3; 30011S; D = 2%
230 Siemens
BCP68
Total power dissipation PIOI = f(TAl Transition frequency fT = ((l cl

MHz VCE = 5 V
2.0 r-r-,.---,-r-r-,.---,-r-r-r--,-r-r--.-, 10 3
W ~ - 1- -
- - -j---t-t-t---t---l l-
--1- ---- -- r-- - - r- I-- 1- -- _.
"101 - --- --- -- - 1- -j----I-f---+--t---l f,

I---
- -+-- 1-- - -1-
! 1----
f---
1.5 - h - --1-1--- f--
- 1-\
f
r- _ I~ .-j--t-I-j---I-iH---t---l
1---- ,- -
1.0 1-1-[:\ --t-t-t--t-I-j--f---i 10 1
f= --
-- fe:-
r-- ~-
--1-1- -
I--- f:=;k'
-- := := =~- =~~~K++-I--'-I
5 I---
I---
V-
0.5 - - - -I-I- - I - -"--1-1--1--1 1--
-- - - - --- -- - - - \, I-r-
- - -- - -- -- -- -. -t---t-'l-t---j 2
-/-- - - - - - -- - --IV--
- --I--------i- --1-1\
o '--L_ _L-'--'------'---'---'--'-------'---"----'_, 10'
o 50 100°C 150 10° 5 10 1 5 10 1 5 10 3 mA
-~ --Ie
Collector cutoff current/CBO = ((TAl DC current gain hFE = ((lcl

VCE = 30 V VCE = 1 V
hI[ 5
I 10 1
100°
2S o
f-?'50-o-c F-
5 I- I-
'-:- ~ -
r--
5r-
10' nln~~'=H1111l.
~
I---
1---·-
-
1-
.-
100 '---'---'---'---'-'----'--J ----'---'---,----'---'-'-'--.

o 50 100 150°C 10' 5 10 1 5 10 3 5 10' mA
---Ie
Siemens 231
BCP68
Collector-emitter saturation voltage Base-emitter saturation voltage Ie = ((VBE sal)

Ie = f(VCEsal ) hFE = 10
mA hFE = 10 mA
10·
-- l=: := -- ----- I - - -
5 '=
- f--- ~
-
f71 V -
~b rL
~100 °c -
~.::::/ V25 °C ~
-SO °c - i=
r==
rJ / '
10 I -
-1-
5 5 C=f-.:- f- --
1--l-l--I--4--f-.:-I-l-....-l--1- -
10' - -- 10' i=:f=f,-. f--
5 = = == I--
5 1---'.1'-'1--'- J_-t
I-t-- _. _- -I--~I'-'I=
-- f- f-
~4-1~1-I-+- I'-' I'-'
1'-'1'-' - I'-' -1/- -If -- - - - 1 -
10a 100 L.l--L_l_.L.L-lIL.1.L.L-L..J.....L-l
o 0,2 0,4 0,6 0.6 V o 0,2 0,4 0,6 0,6 1,0 1,2 V
- - - - \'r.Esat ....:..- "Esa'
232 Siemens
PNP Silicon AF Transistors BOP 69
• For general AF application

• High collector gain
• Complementary type: BCP 68 (NPN)
Type
~: Marking Ordering code (12-mm tape) Package"
BCP 69 BCP 69 Q62702 - C2130 SOT-223
Maximum Ratings
Parameter Symbol BCP 69 Unit
Collector-emitter voltage VCEO 20 V
VCES 25 V
Collector-base voltage VC80 25 V
Emitter-base voltage VE80 5 V
Total power dissipation. TA ::; 25· C 1) Ptot 1.5 W
Storage temperature range T stg -65 to + 150 ·C
Ther.mal Resistance
Junction - ambient 1) IR thJA ::;83.3 IIVW
t) Package mounled on an epoxy prinled circuil board 40mm x 40mm x 1.5rnm
Mounling pad for the collector lead min 6cm2
.) For delailed dimensions see chapler Package Oullines
Siemens 233
BCP 69
Characteristics
Parameter I I
Symbol Values
min. Ityp. Imax. I
_
Unit
DC Characteristics
Ic =30mA, Ie = 0 20 - - V
Collector-emitter breakdown voltage V(BR)CES
Ie =10\-1 A, veE = 0 25 - - V
Ie = 10\-lA, IB = 0 25 - - V
IE = 10\-lA, IB = 0 5 - - V
Collector-base cutoff current leBo
VCB =25 V - - 100 nA
VcB =25 V, TA =150·C - - 10 \-I A
Emitter-base culort current IEeo
VEe = 5 V, Ie = 0 - - 10 \-I A
le=5mA, VcE =10V 50 - -400 -
Ic = 500 mA, VeE = 1 V 63 - -
le=1A,VeE=1V 60 - - -
Collector-emitter voltage 1) VeEsal
Ie = 1 A, Ie = 100 mA - - 0.5 V
Base-emitter voltage 1) VeE
Ie = SmA, VCE = 1U V -- 0.6 - V
le=1A, VeE=1V - 1
AC CharacterIstics
le= 100 mA, VcE =5 V, f= 100 MHz MHz
1) Pulse test conditions: t ~ 300\-ls; D = 2%
234 Siemens
BCP 69
Total power dissipation PIOI = ((TA ) Transition frequency (T = ((I c)

MHz VCE = 5 V
2.0,,· - .. ---:- , - - - - , - , lOll--
W - - -- .- - -. -.- -- .- - -- - ·-1-
1-1-'------ i-
1-1- - -- - - -- - -/--I-t-t-t--t--i
I- - - . - I-
1.5 r- , - - - - - - 1 - - - - 1 - - l -
f 5 t--t-t-t+IHttt-t-t-HttHt--t-++t+ttH
I- - - i\.-
_t--ot-t--t--trf-t-
10 ~==I=~S= == c=~=- ~
. 1-1-.- --1---[\- - -I--t-H--j
- i--
I-I- ~ - -I- - f\t--t--t--t--t--I-i

1-1-_.-1- -I- - -I- '\
I- - - - - - - -.- ··1-1-- -
OS I- - - -- -I- - .. - ~ - I-
I-I-----------~-
1-1-- -.- -I- -/--f-t-i-t-+'IJ-t-t
--_ .. 1 - - _ . _ . _ - - - - - \
- --. -. -- .- - -. -- -- _. - -- -1\
o . -. - '---. .L- _ _ L..: 10' <--..L-J...LJJUliL--.<.....L...U.llUL..--'.....L.LU.llU
o 50 100 O( 150 10° 5 la' 5 10 1 sIal mA

-7",. ---Ie
Collector cutoff current ICBO = ((TA ) DC current gain hFE = ((I c)

. VCE = 30 V VCE = 1 V
nA
10~ --- -.
II
- .-
5 1-1-1-
--
l-
-
I eao I- -
.' 100 O( -
I 10'
i--- 1--
1/
I-I- -
-
25°(
-50 O( -
~
10l
maxi/ V
-- 5 - - - - -
5 I- - -
-- r- - i-
,/ Vlyp i- -
10 1 -
5 la'
.- =
-==
5
10'
5
r- .-
10° 10°
o 10° 5 10' 5 10 1 5 IO J 5 10' mA
50
-T. 100 150 O(
---Ie
Siemens 235
BCP69
Collector-emitter saturation voltage Base-emitter saturation voltage Ie = ((VOE .n')

Ie = ((VeE sa') hFE = 10
mA hFE = 10
10'
--
5 I-- 1-- - - - - - I-
-I-- -
== 5
-
L4 '/'- 100 °C '\.
25°C _
/ II
=t. ~
- 100 °c
fL r ' 25 °C ~
-- - -50 0 C
rt ~ ,-50 o C 1/
I / I
-I- 5
I I
-I=:::: _ -- I - -
10' 10'
5 - 5
10°
0,2 0,4 0,6 0,8 V o 0,2 0,4 01> 0,8 1,0 1,2 V
- VOEgt
236 Siemens
PNP Silicon Darlington Transistors BCV26
BCV46

• Complementary types: BCV 27, BCV 47 (NPN)

(;] BCV 26 FD Q62702-C 1151 Q62702-C1493 SOT 23
(;] BCV46 FE Q62702-C 1153 Q62702-C1475 SOT 23
Maximum ratings
Parameter Symbol BCV26 BCV46 Unit
TA = 25°C
Storage temperature range Tstg -65··· + 150 °C
Thermal resistance RthJA ::::; 350 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
(;] Preferred type
Siemens 237
BCV26
BCV46

Ic = 10 rnA
BCV26 30 - - V
BCV46 60 - - V
Ic=1001lA
BCV26 40 - - V
BCV46 80 - - V
h = 10 IlA
Collector-cutoff current ICBo
VCB = 30V BCV26 - - 100 nA
VCB = 60V BCV46 - - 100 nA
Vce = 30 V, TA = 150°C BCV26 - - 10 IlA
Vce = 60 V, TA = 150°C BCV46 - - 10 J.lA
Emitter cutoff current hBo - - 100 nA
VEe = 4 V
Ic = 100 IlA, VCE = 1 V BCV26 4000 - - -
BCV46 2000 - - -
Ic = 10 rnA, VCE = 5V BCV26 10000 - - -
BCV46 4000 - - -
Ic = 100 rnA, VCE = 5 V BCV26 20000 - - -
BCV46 10000 - - -
Ic = 0,5 A, VCE = 5 V BCV26 4000 - - -
BCV46 2000 - - -
Collector-emitter saturation voltage ') VCEsat - - 1 V
Ic = 100 rnA, Ie = 0,1 rnA
Base-emitter saturation voltage') VBEsat - - 1,5 V
Ic = 100 rnA, IB = 0,1 rnA

Ic=50mA, VCE=5V, f= 20 MHz
Output capacitance Cob - 4,5 - pF
VCB = 10V, f= 1 MHz
') Pulse test: t 5 300 Ils, D = 20/0
238 Siemens
BCV26
BCV46
Total power dissipation P'o' = f (TA) Collector-base capacitance CCBO = f( VCBO)

mW pF
400 10
CE BO
IC eBo)
~ot
I \
300
200
1\
\
1\
'"
i'--- "r--.
r--. ~BO
jt-.... '-. .....
CEBO
\
\
100
'\
o 1\
o 50 100 150 0 ( 10 0 5 10' V
------- ~ - VEBO I Veso )
Pulse handling capability r'h = f (t) Transition frequency fT = f (l cl

(standardized) VCE = 5 V
K
Iii MHz
10 0 10 3
lih
I
5
,
III '0.5
0,2 I-..
0,1 V
5 0,05
, 0,02
0,01
0,005
2 0:0 IIII 5
D~ ~J!tn-
.l.
T
f-- T-i
10- 3
10-6 10- 5 10- 4 10- 3 10- 2 10-' 10 0 10' s 5 10'
-f
Siemens 239
BCV26
BCV46
Base-emitter saturation voltage Ie = f ( VeE sat) Collector-emitter saturation voltage

hFE = 1000 Ie = ((VcEsad
hFE = 1000
mA
10l
150 0 C<ft 25 OC Ie 5
I I
/I -50 0 C II/
f 1/ ,I
5
I
IL
125°(
r-25°(
-5' O(
==
5
, 10°
2 3 V o 0,2 O,t. 0,6 0,8 1,0 1,2 V
--VcE sat
Collector cutoff current I ceo = (( TA) DC current gain hFE = f (le)

Vce = VCEmax VCE = 5V
" 125°(
L~ °
5
l" max. -55°(
If
Ityp.
'"
5
100
o 50 100 150°C
--1A
240 Siemens
NPN Silicon Darlington Transistors BCV27
BCV47

• Complementary types: BCV 26, BCV 46 (PNP)

~BCV27 FF Q62702-C1152 Q62702-C1474 SOT 23
~BCV47 FG Q62702-C1154 Q62702-C1501 SOT 23
Maximum ratings
Total power dissipation P,o, 360 mW
TA = 25°C
Thermal resistance RthJA ::s; 350 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
~ Preferred type
Siemens 241
BCV27
BCV47

Ic = 10 mA
BCV27 30 - - V
- BCV47 60 - - V
Ic = 1OO!lA
BCV27 40 - - V
BCV47 80 - - V
Ie = 10 IJ.A
VCB = 30V BCV27 - - 100 nA
VCB = 60V BCV47 - - 100 nA
VCB = 30 V, TA = 150°C BCV27 - - 10 !lA
VCB = 60 V, TA = 150°C BCV47 - - 10 !lA
Emitter cutoff current IeBO - - 100 nA
VEB = 4 V
Ic = 100 !lA, VCE = 1 V BCV27 4000 - - -
BCV47 2000 - - -
Ic = 10mA, VCE=5V BCV27 10000 - - -
BCV47 4000 - - -
Ic = 100 mA, VCE = 5 V BCV27 20000 - - -
BCV47 10000 - - -
Ic = 0,5 A, VCE = 5 V BCV27 4000 - - -
BCV47 2000 - - -
Ic = 100 mA, IB = 0,1 mA
Ic = 100 mA, IB = 0,1 mA

Ic = 50 mA, VCE = 5 V, f= 20 MHz
VCB = 10V, f= 1 MHz
') Pulse test: t5 300 !ls, D = 20/0.
242 Siemens
BCV27
BCV47
Total power dissipation Ptot = f (TA) Collector-base capacitance GCBO = f(VCBO)

Emitter-base capacitance GEBO = f(VEBO)
mW pF
400 10
[E BO
([ CBO)
~ot \
r 300
1\
r I"'"
",
200
'\
5 '" , ~BO
~
[EBO
....... 1"-
I'-....
1\
100
1\
o 1\
o 50 100 150 DC 5 100 5 10' V
-1A - VEBO ( VcBol
Pulse handling capability rth = f (t) Transition frequency fT = f (lo)

K
'Vi
10°
g
1
~
PI 0,5
0,2
0,1
0,05 ./
, 0,02 10 I
0,01
0,005
I 0=0 1111
5
~ fpl--
D=f -fl--n-
f--T--i
10- 3 1
~~ W· W 3 W'
'" '"Wi ~ ~s
-f
Siemens 243
BCV27
BCV47
Base-emitter saturation voltage VeE sat = ((/ cl Collector-emitter saturation voltage

hFE = 1000 VCEsat = ((Ie)
hFE = 1000
mA
103
150°C4t 25"( Ie 5 1/
I I
ill _50°C
I /1/
/ I/
5
I
II-
125°C
'-- 25 °C
-55°C
==
10°
3 V o 0,2 0,4 0,6 O,B 1,0 1,2 V
----VCE sat
Collector cutoff current I ceo = (( TA) DC current gain hFE = ((/ cl

Vce = VCEmax VCE = 5V
nA
10 4
V
125°C
..I-
°C
,/ max.
-55°C
/ 104
....
Vtyp.
5
100 103
o 50 100 150 DC 10-1 5 10° 5 10' 5 10 2 5 103 mA
-TA -Ie
244 Siemens
PNP Silicon Darlington Transistors BCV28
BCV48

E
• Complementary types: BCV 29, BCV 49 (NPN)

BCV28 ED Q62702-C1683 Q62702-C1852 SOT 89
BCV48 EE Q62702-C1685 Q62702-C1854 SOT 89
Maximum ratings
Total power dissipation Ptot 1 W
TA = 25°C
Storage temperature range T stg -65··· + 150 °C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 245
BCV28
BCV48

Ic = 10 mA
BCV28 30 - - V
BCV48 60 - - V
Ic = 100 llA
BCV28 40 - - V
BCV48 80 - - V
Emitter base breakdown voltage V(BR) EBO 10 - - V
IE = 10 llA
VCB=30V BCV28 - - 100 nA
VCB=60V BCV48 - - 100 nA
VCB = 30 V, TA = 150°C BCV28 - - 10 llA
VCB = 60 V, TA = 150°C BCV48 - - 10 llA
VEB = 4 V
Ic = 100 llA, VCE = 1 V BCV28 4000 - - -
BCV48 2000 - - -
Ic = 10mA, VCE=5V BCV28 10000 - - -
BCV48 4000 - - -
Ic = 100 mA, VCE = 5 V BCV28 20000 - - -
BCV48 10000 - - -
Ic=0,5A, VCE=5V BCV28 4000 - - -
BCV48 2000 - - -
Ic = 100 mA, IB = 0,1 mA
Base-emitter saturation vOltage ' ) VBEsat - - 1,5 V
Ic = 100 mA, IB = 0,1 mA

Ic = 50 mA, VCE = 5 V, f= 20 MHz
VCB = 10V, f= 1 MHz .
') Pulse test: t:s; 300 lls, D = 20/0.
246 Siemens
BCV28
BCV48
Total power dissipation Ptot = f (TA) Collector cutoff current I CBO = f ( TA)
VCB = VCEmax
W
1,2
1"1,0 1\ /
0,8
r\
1\
i\ l.... max.
0,6
1'\
0,4
r\ 1/
r\ Ityp.
1\
0,2
1'\
o r\
o 50 100 150 DC 50 100 150 DC
-T. -TA
Pulse handling capability rth = f(t) Transition frequency fT = f (10)

K
iii MHz
10° 10 3
1
~
iii Tl
'0,5
0,2
1
fr
V
'-
0,1
0,05
, 0,02
0,01
0,005
1 D=O 1111
10- J
D=f . 1t-rt-
." t:: T .7:;
2
t
10-6 10- 5 10- 4 10- 3 10- 1 10-' 10° 10' s 5 10'

-t
Siemens 247
BCV28
BCV48
Collector-emitter saturation voltage I c = f ( VCE sat) Base-emitter saturation voltage I c = f (VBE sat)
hFE = 1000 hFE = 1000
mA mA
~ ~
150°C--t-t 25 OC
Ie 5
I I I
/1/ /1 -50 DC
t I Ll
5
I
IL
125 DC
10
, 1---25 DC
-55 DC
==
5
100
o 0,2 0,4 0,6 O,B 1,0 1,2 V 2 V
-VCE sat
Collector-base capacitance GCBO = f( VCBO) DC current gain h FE = f (/ c)

Emitter-base capacitance GEBO = f (VEBO) VCE = 5V
pF
10
[ EBO
[ CBO I
5
'"
~
............
.....
~
~BO
125°C
L~
-55 DC
D
...... r-.
"r-.... .......
[EBO
."..
5 -
-
-
-
100 5 10' V
- VEBO ( VcBol
248 Siemens
NPN Silicon Darlington Transistors BCV29
BCV49
• For general AF applications E

• Complementary types: BCV 28, BCV 48 (PNP)

BCV29 EF Q62702-C1684 Q62702-C1853 SOT 89
BCV49 EG Q62702-C1686 Q62702-C1832 SOT 89
Maximum ratings
TA = 25°C

junction -ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 249
BCV29
BCV49

Ic = 10 mA
BCV29 30 - - V
BCV49 60 - - V
Ic = 100 j.1A
BCV29 40 - - V
BCV49 80 - - V
IE = 10 j.1A
Collector cutoff current ICBO
VCB = 30V BCV29 - - 100 nA
VCB = 60V BCV49 - - 100 nA
VCB = 30 V, TA = 150°C BCV29 - - 10 j.1A
VCB = 60 V, TA = 150°C BCV49 - - 10 j.1A
VEB = 4 V
Ic = 100 j.1A, VCE = 1 V BCV29 4000 - - -
BCV49 2000 - - -
Ic= 10 rnA, VCE =5 V BCV29 10000 - - -
BCV49 4000 - - -
Ic = 100 rnA, VCE = 5 V BCV29 20000 - - -
BCV49 10000 - - -
Ic=0,5A, VCE=5V BCV29 4000 - - -
BCV49 2000 - - -
Collector-emitter saturation voltage') VCEsat - - 1 V
Ic = 100 rnA, IB = 0,1 rnA
Ic = 100 rnA, IB = 0,1 rnA

Ic = 50 rnA, VCE = 5 V, f= 20 MHz
VCB = 10V, f= 1 MHz
') Pulse test: t 5300 j.1s, D = 20/0.
250 Siemens
BCV29
BCV49
Total power dissipation Ptot = f ( TA) Collector cutoff current I ceo = f ( TA)
W nA
1,2 10 4
P.
('1,0
\. ,/
0,8
\
1\
1\ ,,! max.
0,6
\.
0,4
\
\ Ityp.
\
0,2
\.
o 1\
o so 100 150 ·C so 100 150 ·C
-7;; -T,.
Pulse handling capability rth = fIt) Transition frequency fT = f (/ c)

(standardized) VCE = 5V
K
W
10°
~
5
r t r- ~ 0.15
5
",!Ie 0.2
0.1
0.05
2
/'
~ 0.02 10 2
V 0.01
0.005
0=0
2 5
1!::r-
2
o=~
113 '" T ,,,' 1
10-6 10-5 10- 4 10-3 10-2 10- 1 10° S
-t
Siemens 251
BCV29
BCV49
Collector-emitter saturation voltage Ie = t( VeE sat> Base-emitter saturation voltage Ie = t( VBEsat)

hFE = 1000 hFE = 1000
rnA rnA
~ ~
150 °c+l. 25 OC
I U
VI II -50°C
/ I/
5
I-
125°C
-25°C
-55°C F=
5
II
10-'
100
o 0,2 0,4 0,6 0,8 1,0 1.2 V o - 2 3 V
--Vcr sat VeE SIt
Collector-base capacitance GeBo = t(VeBo) DC current gain h FE = f (I cl

Emitter-base capacitance GEBO = t (VEBO) VeE = 5V
pF
10
[E BO
I[ eBO 1
5
""" "t'-
r--.. ~BO
............
125°C
-55°(
':r-.... .........
[EBO
./
10'
10l
10 0 5 10' V 10-' 5 100 5 10' 5 10 2 5 10 J rnA
- VEBO I VeBol
-Ie
252 Siemens
NPN Silicon AF Transistors BCW60
BCX70

•
•
•
•
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: SCW 61, SCX 71 (PNP) c{!j:
SCW60A AA SCW60 FN AN Refer to index SOT 23
BCW60 B AS rn SCX70 G AG
SCW60 C AC rn SCX70 H AH
SCW60 D AD rn SCX 70 J AJ
BCW60 FF AF rn SCX 70 K AK
Maximum ratings
Parameter Symbol BCW60 BCW60 FF BCX70 Unit
Total power dissipation P tot 330 mW
TA = 25°C
Thermal resistance RthJA :s; 375 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
rn Preferred type
Siemens 253
BCW60
BCX70

Ic = 10 mA BCW 60, BCW 60 FF 32 - - V
BCX70 45 - - V
Collector-base breakdown voltage V(BR)CSO
Ie = 10 !lA BCW 60, BCW 60 FF 32 - - V
BCX70 45 - - V
le=1!lA
VCB=32V BCW 60, BCW 60 FF - - 20 nA
VCB = 45 V BCX70 - - 20 nA
Vcs = 32 V, TA = 150°C BCW 60, BCW 60 FF - - 20 !lA
VCB = 45 V, TA = 150 0 e BeX 70 - - 20 !lA
VEB = 4 V
Ic = 10 !lA, VCE = 5 V
BCW 60 A, BCX 70 G 20 140 - -
BCW 60 B, BeX 70 H 20 200 - -
BCW 60 FF, BeW 60 e, BeX 70 J 40 300 - -
BCW 60 FN, BeW 60 D, BCX 70 K 100 460 - -
Ic=2mA, VCE=5V
BCW 60 A, BCX 70 G 120 170 220 -
BeW 60 B, BeX 70 H 180 250 310 -
BCW 60 FF, BCW 60 e, BCX 70 J 250 350 460 -
BCW 60 FN, BeW 60 D, BCX 70 K 380 500 630 -
Ic = 50 mA, VCE = 1 V
BCW 60 A, BeX 70 G 50 - - -
BCW 60 B, BeX 70 H 70 - - -
BCW 60 FF, BeW 60 C, BeX 70 J 90 - - -
BCW 60 FN, BeW 60 D, BeX 70 K 100 - - -
Ic = 10 mA, Is = 0,25 mA - 0,12 0,25 V
Ic = 50 mA, Is = 1,25 mA - 0,20 0,55 V
Base-emitter saturation voltage ') VSEsat
Ic = 10 mA, Is = 0,25 mA - 0,70 0,85 V
Ic = 50 mA, Is = 1,25 mA - 0,83 1,05 V
Base-emitter voltage VBE(on)
I c = 10 !lA. VCE = 5 V - 0,52 - V
Ic = 2 mA, VCE = 5 V 0,55 0,65 0,75 V
Ic = 50 mA, VCE = 1 V') - 0,78 - V
') Puls~ test: t:$ 300 !ls, D = 20/0.
254 Siemens
BCW60
BCX70

Ic = 20 rnA, VCE = 5 V, f= 100 MHz
VCB = 10V, f=1 MHz
VCB = 0,5 V, f= 1 MHz
Ic = 2 rnA, VCE = 5 V, f= 1 MHz
sew 60 A, sex 70 G - 2,7 - kQ
sew 60 s, sex 70 H - 3,6 - kQ
sew 60 FF, sew 60 e, sex 70 J - 4,5 - kQ
sew 60 FN, sew 60 D, sex 70 K - 7,5 - kQ
sew 60 A, sex 70 G - 1,5 - 10- 4
sew 60 s, sex 70 H - 2,0 - 10- 4
sew 60 FF, sew 60 e, sex 70 J - 2,0 - 10- 4
sew 60 FN, sew 60 D, sex 70 K - 3,0 - 10- 4
sew 60 A, sex 70 G - 200 - -
sew 60 s, sex 70 H - 260 - -
sew 60 FF, sew 60 e, sex 70 J - 330 - -
sew 60 FN, sew 60 D, sex 70 K - 520 - -
sew 60 A, sex 70 G - 18 - J.!s
sew 60 s, sex 70 H - 24 - J.!s
sew 60 FF, sew 60 e, sex 70 J - 30 - J.!s
sew 60 FN, sew 60 D, sex 70 K - 50 - J.!s
Noise figure F
Ic = 0,2 rnA, VCE = 5 V, Rs = 2 kQ
f= 1 kHz, M= 200 Hz - 2 - dS
sew 60 A to sex 70 K
Noise figure
Ic = 0,2 rnA, VCE = 5 V, Rs = 2 kQ
f= 1 kHz, M= 200 Hz - 1 2 dS
sew 60 FF, sew 60 FN
Equivalent noise voltage Vn - - 0,135 J.!V
Ic = 0,2 rnA, VCE = 5 V, Rs = 2 kQ
f=10Hz···50Hz
Siemens 255
BCW60
BCX70
Total power dissipation Ptot ,.; f ( TA) Collector-base capacitance CCBO = f( VCBO)
Emitter-base capacitance CEBO = f(VEBO)
mW pF
400 12
"lot
1-1- ...
\.
t 300
~
l\
200
\.
"""\
8
'" , f'
iJCBO
i'-
r-.
1'\
~
4
CE~O . . . . r-.
.100
\.
2
,
o 1'\
o 50 100 150 DC 5 10' V
-7.4
Pulse handling capability rth = fIt) Transition frequency fT = f (Ie)

K
Vi MHz
10° 103
, ~
III TT
0,5
0,2
t
fy 5
1--1"-
0,1 i.I
5 0,05
0,02 10 2
l/
0,01
0,005
0=0 1111 5
10- 2
~
tp
O=y ~T-,,;
10-3 10
,
10-6 10- 5 10-4 10- 3 10- 2 10-' 10° 10' s 10-' 5 10' 5 10 2 rnA
-f -Ie
256 Siemens
BCW60
BCX70
Base-emitter saturation voltage Ie = f (Vae sail Collector-emitter saturation voltage

hFE = 40 Ie = {(VeEsa')
hFE = 40
mA
10 2
Ie Ie ./
! r- -
-
100°C
25O~~
- 50 oC I
I I I
II II I / /
VI d V V
-50°C
25°(
l00 0 (
10-1
° 0,2 0,4 0,6 0,6 1,0 1,2 V
10-1
0,1 0,5 V
VSE sat ° 0,2 0,3 0,4
----VcEsat
Collector current Ie = {(VaE) DC current gain hFE = f (le)

VeE = 1 V VeE = 1 V
rl00 0 (
II
/ I r- 25 °(
~ -
II
l00°C I 25°C _50 0 (
10'
10- 2 I 10°
o 0,5 1.0 V 10- 1 5 10- 1 5 10° 5 10' 5 10 1 mA
-Ie
Siemens 257
BCW60
BCX70
Collector cutoff current I csc = f ( TA) h parameter he = f(Ie)

VCE=5V
nA
104 101
5
5
j'
10' ~". VcE=5V
max. V
5
::h'1.
1/
~ jV
10'
5
=h1,
typo 5
~
h11•
, V
50 100 150°C 5 10' mA
h parameter he = f (VCE) Noise figure F = f ( VCE)

Ie = 2 mA Ie = 0,2 mA, Rs = 2 kO, f= 1 kHz
dB
2,0 20 r-rrTITmr-rTn~r-rTTn"m
1
I
I Ic=2mA F
"1- c-
j' 1,5 h 1" t- 1 15 ~~~~-r~~r-+++*~

.H ~ ;;;;p.
\\ ........
'\ ~
1,0 1\ .... h ll •
",. ~
t;;;
"\ h111, P
0,5
o OL-~LUillL~~Uill~~~=
o 10 20 30 V 10·'
-VcE
258 Siemens
BCW60
BCX70
Noise figure F ~ f(f) Noise figure F ~ f (/ c)

Ie ~ 0,2 mA, Rs ~ 2 kQ, VCE ~ 5V VCE~5V, f~ 120Hz
dB dB
20 20
Rs=1 Mil 100kll 10kll/

i-
I II
I I
1/
10 1\ 10
J 50011
1\
II
,
.I I
V\- I 1kll
11111
11111
r- IIIII
10° 10 ' 10 ' mA
--f
Noise figure F ~ f (l cl Noise figure F ~ f (/ c)

VCE ~ 5 V, f~ 1 kHz VCE ~ 5V, f~ 10 kHz
dB dB
20 20
I Rs=~11
Rs=1MIl 100k I 10 kll I
\ I /100k
I I II
10 1\ 10 II III
\ ill
1kll 0011 10kll
/
II / \.
(\
...... " 50011 1kll ...... /
I III 111111
",- 1000' I III IIIU
1aIII~
o r- IIIII o "
10- 3 10 ' mA 10- 3 10' mA
--Ie --Ie
Siemens 259
PNP Silicon AF Transistors BCW61
BCX71

• Complementary types: BCW 60, BCX 70 (NPN)

BCW61 A BA BCX61 FN BN Refer to index SOT 23
BCW61 B BB ~ BCX 71 G BG
BCW61 C BC ~ BCX71 H BH
BCW61 0 BO ~ BCX71 J BJ
BCW61 FF BF ~ BCX 71 K BK
Maximum ratings
Parameter Symbol BCW61 BCW61 FF BCX71 Unit
Total power dissipation PlOt 330 mW
TA = 25°C
Thermal resistance RthJA :<:; 375 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
~ Preferred type
260 Siemens
BCW61
BCX71

Ic = 10 rnA BCW 61, BCW 61 FF 32 - - V
BCX 71 45 - - V
Ie = 10 flA BCW 61, BCW 61 FF 32 - - V
BCX71 45 - - V
lE=1flA
VCB=32V BCW 61, BCW 61 FF - - 20 nA
VCB = 45 V BCX71 - - 20 nA
VCB = 32 V, TA = 150°C BCW 61, BCW 61 FF - - 20 flA
VCB = 45 V, TA = 150°C BCX71 - - 20 flA
Emitter cutoff current lEBo - - 20 nA
VEB = 4 V
Ic = 10 flA, VCE = 5 V
BCW 61 A, BCX 71 G 20 140 - -
BCW 61 B, SCX 71 H 30 200 - -
BCW 61 FF, BCW 61 C, SCX 71 J 40 300 - -
BCW 61 FN, BCW 61 D, BCX 71 K 100 460 - -
Ic=2mA, VCE=5V
BCW 61 A, BCX 71 G 120 170 220 -
BCW 61 B, BCX 71 H 180 250 310 -
BCW 61 FF, BCW 61 C, BCX 71 J 250 350 460 -
BCW 61 FN, BCW 61 D, BCX 71 K 380 500 630 -
Ic = 50 mA, VCE = 1 V
BCW 61 A, BCX 71 G 60 - - -
BCW 61 B, BCX 71 H 80 - - -
BCW 61 FF, BCW 61 C, BCX 71 J 100 - - -
BCW 61 FN, BCW 61 D, BCX 71 K 110 - - -
Collector-emitter saturation voltage') VCEsat
Ic = 10 mA, IB = 0,25 mA - 0,12 0,25 V
Ic = 50 rnA, IB = 1,25 mA - 0,20 0,55 V
Base-emitter saturation voltage') VBEsat
Ic = 10 mA, IB = 0,25 mA - 0,70 0,85 V
Ic = 50 mA, IB = 1,25 mA - 0,83 1,05 V
Base-emitter voltage') VBE (on)
Ic = 10 flA, VCE = 5 V - 0,52 - V
Ic = 2 mA, VCE = 5 V 0,55 0,65 0,75 V
I c = 50 mA, VCE = 1 V - 0,72 - V
') Pulse test: t:5 300 fls, D = 20/0.
Siemens 261
BCW61
BCX71

Ic = 20 mA, VCE = 5 V, f= 100 MHz
VCB = 10V, f=1 MHz
VCB = 0,5 V, f= 1 MHz
Ic = 2 mA, VCE = 5 V, f= 1 MHz
sew 61 A, SeX.71 G - 2,7 - kn
sew 61 s, sex 71 H - 3,6 - kn
sew 61 FF, sew 61 e, sex 71 J - 4,5 - kn
sew 61 FN, sew 61 D, sex 71 K - 7,5 - kn
Ic = 2 mA, VCE = 5 V, f= 1 kHz
sew 61 A, sex 71 G - 1,5 - 10- 4
sew 61 s, sex 71 H - 2,0 - 10- 4
sew 61 FF, BeW 61 e, sex 71 J - 2,0 - 10- 4
sew 61 FN, Bew 61 D, sex 71 K - 3,0 - 10- 4
sew 61 A, sex 71 G - 200 - -
sew 61 s, sex 71 H - 260 - -
sew 61 FF, sew 61 e, sex 71 J - 330 - -
sew 61 FN, sew 61 D, sex 71 K - 520 - -
sew 61 A, sex 71 G - 18 - I1S
sew 61 S, BeX 71 H - 24 - I1 s
sew 61 FF, sew 61 e, sex 71 J - 30 - I1 s
sew 61 FN, sew 61 D, sex 71 K - 50 - I1s
Noise figure F
Ic = 0,2 mA, VCE = 5 V, Rs = 2 kn
f= 1 kHz, M= 200 Hz - 2 - dS
sew 61 A to sex 71 K
Noise figure
Ic = 0,2 mA, VCE = 5 V, Rs = 2 kn
f= 1 kHz, M= 200 Hz - 1 2 dS
Equivalent noise voltage Vn - - 0,11 I1V
Ic = 0,2 mA, VCE = 5 V, Rs = 2 kn
f= 10 Hz ... 50 Hz
262 Siemens
BCW61
BCX71
Total power dissipation Ptot = f (TA) Collector-base capacitance GCBO = f(VCBO)

Emitter-base capacitance GEBO = f (VEBo)
rnW pF
400 12
CC60
.c;ot
i 300
I-~
(CT) 10
" I\..
"-
'\.
"- }C60
200
\. '" "-" ......
100
4
[£60
/
" ......
\.
o 1\
o 50 100 150°C
-T. - VC60 (V [BO )
Pulse handling capability (th = f (t) Transition frequency fT = f (I cl

K
W MHz
10° 103
'ih 5 ~
,
j,...1"..-
I 10- t ~
~ III
0.5
0.2
I
2
~
0.1 V
0.05
0.02
V
0.01
0.005
0=0
2
1(r3
10-6 10-5
o=~
'"
~
10- 4
T
10- 3 10- 2 10-' 10° 5 5 10' 5 10 3 rnA
-t -IC
Siemens 263
BCW61
BCX71
Base-emitter saturation voltage VBE sat = f (I c) Collector-emitter saturation voltage

hFE = 40 VCEsat = f(Iel
hFE = 40
mA mA
~ ~
j
1 771
l -I -
l000e I I I 77 -SOO(
250~f:: 1/ II 2S 0 [
f--
_ 50 0[1 1/, A ~ V lODO(
5 5
10-1 xr1
o 0.2 0.4 0.6 0.8 1,0 1.2 V o 0,1 0,2 0,3 0,4 0,5 V
---VcEsat
Collector current I C = f (VBE) DC current gain h FE = f (l c)

VeE = 1 V VCE = 1 V
100 0(
rT
/ J 1- 250
~(
fT
l00°Cf 2S 0 [ _50 0 [ 5
10°
5
10 1
1
5
2 I
0.5 1.0 V °
10 ,0-2 5 10-1 5 100 5 101 5 101 mA
-Ie
264 Siemens
BCW61
BCX71
Collector cutoff current I eBO = (( TA) h parameter he = ((l cl

VeE = 5V
nA
10 4 10 2
5
5
h,
1 h ll • \'h=5V
ma~/ V
5
,h,2 •
1/
10'
5
" ........ "'- VII'
typo
IoCh 21,
h2y
, 1/
50 100 150 ·C
-Ie
h parameter he = ((VeE) Noise figure F = f (VeE)

Ie = 2 mA Ie = 0,2 mA, Rs = 2 kn, f= 1 kHz
dB
2,0 20 r-rTTITmr-,Tnmnr-"Tnrn
I
I
}e =12~A F
1 15 ~~+H~-+-H~m-~~~
h,,-~
f--
\ ~
....
1,0
" I\.
,,-
10 I-H++ttHl--t-H-tttHt--+++1-ttffl
h'y~
" ".,
..-+'"
hn-r-
l/'
0,5
o 0L--.L--'.-Ll..!.J.llL----'.-L'-"-ll=----'--.L.L~
o 10 30 V 10-'
Siemens 265
BCW61
BCX71
Noise figure F = f (f) Noise figure F = f (l cl

Ie = 0,2 rnA, Rs = 2 kn, VCE = 5 V VCE=5V,f=120Hz
dB dB
20 20
I- ~s=1MQ 100kl1 10kl1f

I
II
I
10 \ 10
J 500Q
I
5
.I L
II
" 1kl1
11111
o
10- 2 10° 10'
o
10-3
- 11111
11111
10' mA
--f
Noise figure F = f (l c) Noise figure F = f (l cl

VCE =5V, f= 1 kHz VCE =5V, f= 10kHz
dB dB
20 "TTI=r"Tmm-rnn=-'Trr~ 20
! 15 r++m~++#ffi~**~/#+~
f\+++tflfll-~Rs=1MI1 100k I 10kl1
Rs= 1MI1
\ I f100k
f I 1111
10 ~~ct+Httttt---+-+++~-++t*ll1t-+--tl+tttII 10
I IIIII
IIIII
1kl1 OOQ 10kQ
I
II / I\,
II 50011 1kQI\' /
11111 11111 ...-:
11111 Jllll
lUll ..ws:J+1c::: ~
0- o
10- 3 10- 2 10° 10' mA 10- 3 10' mA
--Ie --Ie
266 Siemens
NPN Silicon AF Transistors BCW65
BCW66

• Complementary types: SCW 67, SCW 68 (PNP)

0SCW65A EA o BCW66 F EF Refer to index SOT 23
o SCW 65 S EB 0BCW66G EG
0BCW65C EC o BCW 66 H EH
Maximum ratings
Parameter Symbol BCW65 BCW66 Unit
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
o Preferred type
Siemens 267
BCW65
BCW66

Ic = 10 rnA BCW65 32 - - V
BCW66 45 - - V
Ie = 10 !-LA BCW65 60 - - V
BCW66 75 - - V
le=1O!-LA
VCB = 32V BCW65 - - 20 nA
VCB = 45V BCW66 - - 20 nA
VCB = 32 V, TA = 150°C BCW65 - - 20 !-LA
VCB = 45 V, TA = 150°C BCW66 - - 20 !-LA
Emitter-base cutoff current leBO - - 20 nA
VEB = 4 V
DC current gain ') hFE
Ic=100!-LA, VCE=10V
BCW 65 A, BCW 66 F 35 - - -
BCW 65 B, BCW 66 G 50 - - -
BCW 65 C, BCW 66 H 80 - - -
Ic = 10 rnA, VCE = 1 V
BCW 65 A, BCW 66 F 75 - - -
BCW 65 B, BCW 66 G 110 - - -
BCW 65 C, BCW 66 H 180 - - -
Ic = 100 rnA, VCE = 1 V
BCW 65 A, BCW 66 F 100 160 250 -
BCW 65 S, SCW 66 G 160 250 400 -
BCW 65 C, BCW 66 H 250 350 630 -
Ic = 500 mAo VCE = 2V
SCW 65 A, BCW 66 F 35 - - -
SCW 65 S, BCW 66 G 60 - - -
BCW 65 C, SCW 66 H 100 - - -
Ic = 100 rnA, IB = 10 rnA - - 0,3 V
Ic = 500 rnA, IB = 50 rnA - - 0,7 V
Ic = 100 rnA, IB = 10 rnA - - 1,25 V
I c = 500 rnA, I B = 50 rnA - - 2,00 V

Ic = 50 rnA, VCE = 5 V, f= 20 MHz
VCB = 10V, f= 1 MHz
VEB = 0,5 V, f= 1 MHz
') Pulse test: t:5, 300 !-Ls, D = 20/0.
268 Siemens
BCW65
BCW66
Total power dissipation Ptot = f (TA) Transition frequency fT = f (/ c)

VCE =5V
rnW MHz
400 103
":01
i 300
f--",
\.
200
v 1\
\.
5
100
1\
2
o I\,
o 50 100 150 DC 5 W 5 103 rnA
-~
Pulse handling capability rth = f (t) Collector cutoff current I cso = f ( TA)
(standardized) VCBO = SOV
K
Iii
10 0
,
•
II I
'0,5
0,2
0,1
max. /
/
1/
0,05
, 0,02
0,01
~. I'typ
0,005
2 0:0 1111
5 V
10-3
O:f 1G--L
-7;!
I-- T
10-6 10- 5 10- 0 10- 3 10- 2 10-' 100 10' s 50 100 150 D(
-t -r.
Siemens 269
BCW65
BCW66
Base-emitter saturation voltage Ie = f (VBE sat) Collector-emitter saturation voltage

hFE = 10 Ie = f(VCEsat)
hFE = 10
mA rnA
10 l 10l
5 150 0 ( If:.. 25°( 5 150 0 [
V- 5OO ( 25°[
-~500[
10'
t
,
2 200 400 600 800 rnV
-VaEso.t -~fEsat
DC current gain hFE = f(Ie)

VCE = 1 V
10l91l~• •
100 0
1o' • • nBI
100 L...L..liJ.lilJJ..-'--.lJ.lJ.illL-Ll-Lll1llL.J..LWilll
10-' 5 100 5 10' 5 10 1 5 10l rnA
-Ie
270 Siemens
PNP Silicon AF Transistors BCW67
BCW68

• Complementary types: SCW 65, SCW 66 (NPN)

I'!l SCW67 A DA I'!l SCW 68 F DF Refer to index SOT 23
I'!l SCW67 S DS I'!l BCW 68 G DG
I'!lSCW67 C DC I'!l SCW 68 H DH
Maximum ratings
Parameter Symbol BCW67 BCW68 Unit
TA = 25 DC
Junction temperature Ti 150 DC
Storage temperature range Tstg -65 .. · + 150 DC

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
I'!l Preferred type
Siemens 271
BCW67
BCW68

Ic = 10 mA BCW67 32 - - V
BCW68 45 - - V
Ic=10~A BCW67 45 - - V
BCW68 60 - - V
IE = 10 ~
VCB = 32V BCW67 - - 20 nA
VCB =45V BCW68 - - 20 nA
VCB = 32 V, TA = 150°C BCW67 - - 20 ~
VCB = 45 V, TA = 150°C BCW68 - - 20 ~
Emitter-base cutoff current leBO - - 20 nA
VEB = 4V
Ic = 100 !LA, VCE = 10 V
BCW 67 A, BCW 68 F 35 - - -
BCW 67 B, BCW 68 G 50 - - -
BCW 67 C, BCW 68 H 40 - - -
Ic = 10 mA, VCE = 1 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
75
120
-
-
-
-
--
BCW 67 C, BCW 68 H 180 - - -
Ic = 100 mA, VCE = 1 V
BCW 67 A, BCW 68 F 100 160 250 -
BCW 67 B, BCW 68 G 160 250 400 -
BCW 67 C, BCW 68 H 250 350 630 -
Ic = 500 mA, VCE = 2V
BCW 67 A, BCW 68 F 35 - - -
BCW 67 B, BCW 68 G 60 - - -
BCW 67 C, BCW 68 H 100 - - -
Ic = 100 mA, IB = 10 mA - - 0,3 V
Ic = 500 mA, IB = 50 mA - - 0,7 V
Ic = 100 mA, IB = 10 mA
Ic = 500 mA, IB = 50 mA
-- -
-
1,25
2
V
V

Ic= 50 rnA, VCE = 5V, f= 20 MHz
VCB = 10 V, f= 1 MHz
VEB = 0,5 V, f= 1 MHz
') Pulse test: t ~ 300 !Ls, D = 20/0.
272 Siemens
BCW67
BCW68
Total power dissipation Ptot = f ( TAl Transition frequency fr = f (I cl

VCE = 5V
mW MHz
400 103
flo!
~h.
t 300
I\, ..,
200 \
" 5
1/
100
1'\
I'i
a 1'\
a 50 100 150 °C 5 10'
-~
Pulse handling capability fth = f(t) Collector cutoff current I CBO = f ( TA)
(standardized) VCB = VCEmax
K
iii
10°
'ih
t ,
5
II II
0,5
0,2 max. 1/
'-,
0,1
5 0,05
0,02
0,01
0,005 v' typo
I 0=0 '"'
~
fp
D=r
T7,!
10-1
~~ ~ ~ WI ~ ~ ~s 50 100 150 0 C
-t
Siemens 273
BCW67
BCW68
Base-emitter saturation voltage VBE sa' = f (I cl Collector-emitter saturation voltage

hFE = 10 VCEsa' = f(Ie)
hFE = 10
mA mA
103 103
150' iI"_ 25'C 5
Ie i-"-50 ·c lS0'C
/h ~ "Z5 .(
l~ i"-SO'(
110 2
10-' L-L...JL.L...l._-'----"---''---'---'----' , _._-

o 2 3 4 V zoo 400 600 800 mV
- VaEso.t

VCE = 1 V
5
lDO'C
r 1-~51'
r-::50'
.....
5
-
-
10°
10-' 5 10° 5 10' 5 10 1 5 10 3 rnA
-Ie
274 Siemens
NPN Silicon AF and Switching Transistors BCX41
BSS64

• Complementary types: BCX 42, BSS 63 (PNP)

iii BCX 41 EK Q62702-C946 Q62702-C1659 SOT 23
BSS64 AM Q62702-5394 Q62702-5535 SOT 23
Maximum ratings
Parameter Symbol BSS64 BCX41' Unit
Peak collect-or current ICM 1 A
TA = 25°C
Storage temperature range Tstg -65· .. +150 °C
Thermal resistance RthJA S375 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
iii Preferred type
Siemens 275
BCX41
BSS64

Collector-emitter breakdown voltage V(SR) CEO
Ic = 10 mA BSS64 BO - - V
BCX41 125 - - V
Collector-base breakdown voltage ') V(SR) cso
Ic = 100 !LA BSS64 120 - - V
BCX41 125 - - V
Ie = 10 !LA
Vcs= BOV BSS64 - - 100 nA
Vcs = 100V BCX41 - - 100 nA
Vcs= BOV, TA= 150°C BSS64 - - 20 !LA
Vcs = 100V, TA = 150°C BCX41 - - 20 !LA
Collector cutoff current ICEO
VCE = 100 V, VSE = 0,2 V
TA= 85°C BSS64 - - 10 !LA
TA = 125°C BCX41 - - 75 !LA
VES = 4 V
Ic = 100 !LA, VCE = 1 V BCX41 25 - - -
Ic = 1 mA, VCE = 1 V BSS64 - 60 - -
Ic= 4 mA, VCE = 1 V BSS64 20 80 - -
Ic = 10 mA, VCE = 1 V BSS64 - 80 - -
Ic = 20 mA, VCE = 1 V BSS64 - 55 - -
Ic = 100 mA, VCE = 1 V BCX41 63 - - -
Ic = 200 mA, VCE = 1 V BCX41 40 - - -
Ic = 300 mA, Is = 30 mA BCX41 - - 0,9 V
Ic = 4 mA, Is = 0,4 mA BSS64 - - 0,7 V
Ic= 50mA,Is=15mA BSS64 - - 3,0 V
Base-emitter saturation voltage') VSEsat - - 1,4 V
I c = 300 mA, Is = 30 mA BCX41

Ic = 20 mA, VCE = 5 V, f= 20 MHz
Vcs = 10V, f= 1 MHz
') Pulse test: t 5, 300 !Ls, D = 2010.
276 Siemens
BCX41
BSS64
Total power dissipation Ptot = f (TA) Collector current I c = f (VBE)

VCE = 1 V
mW mA
400 103
5 TA =l?OoC
~ot Ir I
i 300
-""
\ 5
7i. =25 O(
~ =_ CO(
\.
200 10'
I\, 5
1\
100
\
5
\
a \ ,
o 50 . 100 150 0 ( 2 3 V
-VBE
-~
Pulse handling capability rth = f(t) Transition frequency fT = f (/cl

K
W
10°
,
If I
1'0,5
0,2
0,1
0,05
0,Q2
0,01
0,005
1
·0:0 1111
;I
5
V
~
tp 2
0:-
T
T
10-3 '"
10- 10- 5 10- 10- 3 10- 1 10-' 10°
6 4 10' s 5 1Q1 5 10 3 rnA
-t
Siemens 277
BCX41
BSS64
Base-emitter saturation voltage Ie = f( VeE sat) Collector-emitter saturation voltage

hFE = 10 Ie = '(VCEsat)
hFE = 10
mA mA
103 103
~ ;oO(
150·C4i 25 "(
Ie
l///f"
/I -SO ·C Atr25 '(
r 10 2
~ lS0'(
lot 10'
5 5
10°
5
lO-t 10·
, 1\
0 2 3 V o 200 400 600 800 mV
VeE sat
Collector cutoff current I ceo = '( TA) DC current gain hFE = '(/e)
Vce = VCEmax VCE = 1 V
max. ,/
150 0 (
f .... V 2S .(
~
I- -SO'(
typ.
10 '
1/
5 S
1 1/ 10'
50 100 150 .( 10·' 5 10° 5 10' 5 10 2 5 10 3 mA
-TA --Ie
278 Siemens
PNP Silicon AF and Switching Transistors BCX42
BSS63

• Complementary types: BCX 41, BSS 64 (NPN)

o BCX42 DK 062702-C945 062702-C1485 SOT 23
BSS63 BM 062702-S401 062702-S534 SOT 23
Maximum ratings
Parameter Symbol BSS63 BCX42 Unit
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
o Preferred type
Siemens 279
BCX42
BSS63

Ic=10mA BCX42 125 - - V
BSS63 100 - - V
Collector-base breakdown voltage') V(BR) CBO
Ic=100~A BCX42 125 - - V
BSS63 110 - - V
IE = 10~A
VCB = 80V BSS63 - - 100 nA
VCB=100V BCX42 - - 100 nA
VCB = 80 V, TA = 150°C BSS63 - - 20 ~A
VCB = 100 V, TA = 150°C BCX42 - - 20 ~A
Collector cutoff current ICEO
VCE = 100 V, VBE = 0,2 V
TA = 85°C BCX42 - - 10 ~A
TA=125°C BCX42 - - 75 ~A
VEB = 4 V
Ic = 100 ~A, VCE = 1 V BCX42 25 - - -
Ic= 10mA, VCE=5V BSS63 30 - - -
Ic= 20 mA, VCE = 5V BSS63 30 - - -
Ic = 100 mA, VCE = 1 V BCX42 63 - - -
Ic = 200 mA, VCE = 1 V BCX42 40 - - -
Ic = 300 mA, IB = 30 mA BCX42 - - 0,9 V
Ic = 25 mA, IB = 2,5 mA BSS63 - - 0,25 V
Ic = 75 mA, IB = 7,5 mA BSS63 - - 0,9 V
Base-emitter saturation voltage ') VBEsat - - 1,4 V
I c = 300 mA, I B = 30 mA BCX42

Ic = 20 mA, VCE = 5 V, f= 20 MHz
VCB = 10V, f= 1 MHz
') Pulse test: t 5, 300 ~s, D = 20/0.
280 Siemens
BCX42
BSS63
Total power dissipation P'ot = f (TA) Collector current Ie = f (VBE)

VCE = 1 V
mW mA
400 103
T, =150 0 (
-,;" r-h.
t 300
r,. = 25 O(
r;.. = - ~O(
5
I\,
200 10'
I\, 5
100
\
\.
I\. 5
o 1\ ,
o 50 100 150 0 ( 3 V
-~
Pulse handling capability rth = f (t) Transition frequency fT = f (lo)

K
Vi
10°
'ih
t , ~
JI 1
'0,5
0,2 2
0,1
5 0,05 ./ \
, 0,02
0,01
0,005
1 0=0 1111 5
5
/
~ tpl--
o=1.YLn-
T i--- T _-j
10-3 "I III III
10- 6 10- 5 10- 4 10- 3 10- 1 10-' 10° 10' 5 5 lOt

-t
Siemens 281
BCX42
BSS63
Base-emitter saturation voltage Ie = '( VeE sat) COllector-emitter saturation voltage

hFE = 10 Ie = '(VCEsat>
hFE = 10
mA
103
= iOO(
1soo C-+i 25 OC
I 1///1'
/I -50°C ~25°C
150°C
5
10-'
, 1\
o 2 3 V 200 400 600 800 mV
Collector cutoff current I ceo = '( TA) DC current gain hFE = '(1 e)
max .• /
--
150 0 (
..- / 25°C
_50 0 (
typo
10'
5 5
, 1/ 10'
50 100 150 D( 10-' 5 10° 5 10' 5 10 2 5 10 3 mA
-TA -Ie
282 Siemens
PNP AF Transistors BCX51
... BCX 53
• For AF driver and output stages E

• Complementary types: SCX 54··. SCX 56 (NPN)

SCX 51-6 AS BCX 52-16 AM Refer to index SOT 89
BCX 51-10 AC BCX 53-6 AJ
SCX 51-16 AD BCX 53-10 AK
SCX 52-6 AF SCX 53-16 AL
BCX 52-10 AG
Maximum ratings
Parameter Symbol BCX 51 BCX52 BCX53 Unit
Collector-base voltage Vcso 45 60 100 V
Emitter-base voltage VESO 5 5 5 V
Peak collector current ICM 1,5 A
TA = 25 DC
Junction temperature 7j 150 DC
Storage temperature range Tstg -65 .. ·+150 DC

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 283
BCX51
·.·BCX53

Ic = 10 mA
BCX51 45 - - V
BCX52 60 - - V
BCX53 80 - - V
Ic = 100 J.lA
BCX 51 45 - - V
BCX52 60 - - V
BCX53 100 - - V
h = 10 J.lA
VCB = 30V - - 100 nA
VCB = 30 V, TA = 150 DC - - 20 J.lA
Emitter cutoff current hBO - - 20 nA
VEB = 4V
Ic = 5 mA. VCE = 2V 25 - - -
Ic = 150 mA. VCE = 2 V
BCX 51, BCX 52, BCX 53-6 40 63 100 -
BCX 51, BCX 52:BCX 5~10 63 100 160 -
BCX 51-16, BCX 52-16, BCX 53-16 100 160 250 -
Ic = 500 mA, VCE=2V
,
25 - - -
Collector-emitter saturation voltage') VCEsat - - 0,5 V
I c = 500 mA, I B = 50 mA
Base-emitter voltage ') VSE - - 1 V
I C = 500 mA, VCE = 2 V

Ic = 50 mA, VCE = 10 V, f= 20 MHz
') Pulse test: (5, 300 J.ls, D = 2010.
284 Siemens
BCX51
... BCX 53
Total power dissipation P'o' = f (TA) Collector current I C = f (VSE)

VCE = 2V
W rnA
1,2 10"
1"1,0
'\
100 0 (
[\ 25°(
0,8
[\ -50 0 (
"JI
1,\
0,6 / /7
\.
0,4 1\ I I
1\ J I
10'
1'\
0,2
'\
1\
° 50 100 150
10°
o
°
0(
0.2 0.4 0,6 0,8 1.0 1.2 V
--T, -VBE
Pulse handling capability r'h = f (t) Transition frequency fT = f (I c)

K
iii
10°
'ih
I , ;;;;
,
~,
0.5
0.2 2
0.1
5 0.05
0.02
r-
0.01
0.005
t'-D=O
2 5
10-3
10-6 10-5
D=f
10- 4
~ 10- 3
T
10- 2 10-' 10° s 5 10' 5 10 2
-t -Ie
Siemens 285
BCX51
···BCX53
DC current gain h FE = f (l cl Collector-emitter saturation voltage

VeE = 2V Ie = f(VeEsa')
hFE = 10
rnA
104
5
1- 100 O(
II
°
- 5
I-- 25
~SOo ~
~
"
'Iv /
,/ -
-5 O(
- 5
-
5 10'
5
10° 10°
10° 5 101 5 101 5 103 5 10'rnA o 0.2 0.4 0.6 0.8 V
-Ie -~hsat
Collector cutoff current leBo = f ( TA) Base-emitter saturation voltage Ie = f(VBEsa')

VeB = 30V hFE = 10
5
1/ Ie
max L/
f 100 O(
25°(
..... ~ .... V SOO(
l-l
"'J
typo
10'
5
10' J 1
5
II
1 1/ 10°
II
so 100 150 0(
o 0.2 0.4 0.6 0.8 1.0 1.2 V
-TA - - - - VSEsat
286 Siemens
NPN Silicon AF Transistors BCX54
... BCX 56
• For AF driver and output stages E

• Complementary types: BCX 51.·. BCX 53 (PNP)

BCX 54-6 BB BCX 55-16 BM Refer to index SOT 89
BCX 54-10 BC BCX 56-6 BJ
BCX 54-16 BO BCX 56-10 BK
BCX 55-6 BF BCX 56-16 BL
BCX 55-10 BG
Maximum ratings
Parameter Symbol BCX54 BCX55 BCX56 Unit
Collector-base voltage Vcso 45 60 100 V
Emitter-base voltage VESO 5 5 5 V
Peak collector current ICM 1,5 A
TA = 25°C
Thermal resistance RthJA :'> 125 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 287
BCX54
···BCX56

Ic=10mA
BCX54 45 - - V
BCX55 60 - - V
BCX56 80 - - V
Ic = 100 J.lA
BCX54 45 - - V
BCX55 60 - - V
BCX56 100 - - V
IE = 10 J.lA
VCB = 30V - - 100 nA
I(CB = 30 V, TA = 150°C - - 20 J.lA
VEB = 4V
Ic=5mA, VCE=2V 25 - - -
Ic = 150 rnA, VCE =2V
BCX 54, BCX 55, BCX 56-6 40 63 100 -
BCX 54, BCX 55, BCX 56-10 63 100 160 -
BCX 54-16, BCX 55-16, BCX 56-16 100 160 250 -
Ic = 500 rnA, VCE=2V 25 - - -
Ic = 500 rnA, IB = 50 rnA
Base-emitter voltage') VBE - - 1 V
Ic = 500 rnA, VCE = 2V

Ic = 50 rnA, VCE = 10 V, f= 20 MHz
') Pulse test: t:5, 300 its, D = 20/0.
288 Siemens
BCX54
···BCX56
Total power dIssIpatIon P,o' = f( TA) TransItion frequency fT = f (l cl

VCE = 10 V
W MHz
10'~m~m~_
1,2
1"',0 \.
0,8
1\
2
1\
1\
0,6
\.
0,4
\
\
1\
0,2
\.
o \ 10' '--.J....-L-.U.JL.LW.---L-'-L.1.J.J.J..IJ...---L-L..Ll..Ujlj
o 50 100 150 0 ( 100 5 10' 5 10 2 5 10' mA
-~ -Ie
Pulse handling capability r'h = f(t) Collector cutoff current I CBO = f ( TA)
(standardized) VCB = 30V
K
iii nA
10° 10'
I
5
'ih 5 I.'
max. V
I ,
I<::
I--
~
, I" I
0.5
0.2 .... V
5
ro;;
I 0.1
0.05
0.02
0.01
0.005 typo
10'
D=O
2 5
5 /
10-
,
10-6 10-5
D=~
10- 4
~ HJ T
10-' 10- 2 10-' 10° s
1 ./
150
50 100 0 (
-t -T..
Siemens 289
BCX54
···BCX56
Collector current JC = f (VSE) Collector-emitter saturation voltage

VCE = 2V Ie = f(VCEsa')
hFE = 10
mA rnA
'0 4 104
5 5
Ie Ie
1 l00 0(
25°(
1 103
5
-SO 0\1::
j Jr'i 10 2
'I If;v 25 °(
r== -SO O(
100 0 (
II 10 1
5
IT
11
100 100
o 0.2 0.4 0.6 0.8 1.0 1.2 V 0 0,2 0,4 0.6 0.8 V
-\'sE - - - - VcESit
Base-emitter saturation voltage J e = f (VBE sad DC current gain hFE = f (Ie)

hFE = 10 VCE = 2V
rnA
10'
l00 0 ( 100°
25°( 10 2
TTT
-50 0 ( : \ e-:25 °
Nil -SO O(
10 2
II rA
5
101 5
T
10a
II 100
o 0.2 0.4 0,6 0,8 1,0 1.2 V 10- 1 5 100 5 101 5 10 2 5 10 3 rnA
--VBEsat -Ie
290 Siemens
NPN Silicon AF Transistors BCX68

E
• Complementary type: BCX 69 (PNP)

BCX68-10 CB Q62702-C1077 Q62702-C1864 SOT 89
BCX68-16 CC Q62702-C1078 Q62702-C1865 SOT 89
BCX68-25 CD Q62702-C1079 Q62702-C1866 SOT 89
Maximum ratings
Collector-base voltage Vcso 25 V
Emitter-base voltage VESO 5 V
Total power dissipation P tot 1 W
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 291
BCX68

Collector-emitter breakdown voltage V(BR) CEO 20 - - V
Ic = 30 mA
Collector-base breakdown voltage V(BR) CBO 25 - - V
Ic=10~A
Emitter-base breakdown voltage V(BR) EBO· 5 - - V
lE=1~A
VCB = 25 V - - 100 nA
VCB = 25 V, TA = 150°C - - 10 ~A
Emitter cutoff current lEBO - - 10 ~A
VEB = 5 V
Ic = 5 mA, VCE = 10 V 50 - - -
Ic = 500 mA, VCE = 1 V
BCX 68-10 63 100 160 -
BCX 68-16 100 160 250 -
BCX 68-25 160 250 400 -
Ic = 1 A, VCE = 1 V 60 - - -
I C = 1 A, I B = 100 mA
Base-emitter voltage') VBE
Ic=5mA, VCE=10V - 0,6 - V
Ic = 1 A, VCE = 1 V - - 1 V

Ic = 100 mA, VCE = 5 V, f= 20 MHz
') Pulse test: t:5, 300 ~s, D = 20f0.
292 Siemens
BCX68
Total power dissipation Ptot = f (TA) Collector current I c = f (VBE)

VeE = 1 V
W
1,2
1"1,0
1\ 100 oS",
25°(
q, '/
\ -SOo(
0,8
\
I I
\.
0,6 II/II
I\,
0,4 1\
1\ I
\.
0,2 5
\.
a 1\ 100
a 50 100 150 DC o 0,2 0.4 0.6 0,8 1,0 1.2 V
--T" -VBE
Pulse handling capability rth = fIt) Transition frequency fT = f (I cl

K
W MHz
100 10 3
'th 5
1':
t "'-.:I
P' 0.5
t
0.2
0.1
5 0.05
0.02 ~
V 0.01
0.005
D=O /
2
10-3
10-6 10-5
D=?
10- 4
~ r
10-3 10- 2 10- 1 100 S
-t
Siemens 293
BCX68
DC current gain h FE = '(le) Collector-emitter saturation voltage

VCE = 1V Ie = '(VcEsad
hFE = 10
rnA
10 4
5
100°
v~ ,/
25° 100 °e
25 °e
~50oe -SO °C
/"
5
10° 10°
10° 5 1Q1 5 1Q1 5 10 3 5 104 rnA o 0,2 0,4 0,6 0,8 V
~/( --~hsat
Collector cutoff current I CBO = '( TA) Base-emitter saturation voltage Ie = '( VBE sad
VCB=25V hFE = 10
nA
105
5 5
ICBO 1/
~;
! 104
5
1/
100°C
25°C
-50'oe
/. ~
rnaxl/ V
103 II 'i
5
1/-
III
1/ ' Vtyp.
102
5
10°
50 100 150°C o 0,2 0,4 0,6 0,8 1,0 1,2 V
-TA -"Esat
294 Siemens
PNP Silicon AF Transistors BCX69

E
• Complementary type: BCX 68 (NPN)

for versions in bulk versions on 12 mm·tape
BCX69-10 CF Q62702-C1080 Q62702-C1867 SOT 89
BCX 69-16 CG Q62702-C1081 Q62702-C1868 SOT 89
BCX69-25 CH Q62702-C1082 Q62702-C1869 SOT 89
Maximum ratings
TA = 25°C
Storage temperature range T stg -65 .. ·+150 °C
Thermal resistance RthJA 5125 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 295
BCX69

Ic=30mA
Collector-base breakdown voltage V(BR)CBO 25 - - V
Ic=101lA
Emitter-base breakdown voltage V(BR)ESO 5 - - V
le=11lA
VCB = 25V - - 100 nA
VCB = 25 V, TA = 150°C - - 10 IlA
Emitter cutoff current leBO - - 10 IlA
VES = 5V
Ic = 5 mA, VCE = 10 V 50 - - -
Ic = 500 mA, VCE = 1V
BCX69-10 63 100 160 -
BCX69-16 100 160 250 -
BCX69-25 160 250 400 -
Ic = 1 A, VCE = 1 V 60 - - -
Ic = 1 A, IB = 100 mA
Base-emitter voltage ') VSE
Ic=5mA, VCE= 10V - 0,6 - V
Ic = 1 A, VCE = 1 V - - 1 V

Ic = 100 mA, VCE = 5 V, f= 20 MHz
') Pulse test; t 5, 300 Ils, D = 20/0.
296 Siemens
BCX69

VCE = 5V
W MHz
1,2 10 3
r 1,O
~
1\
0,8
1\
0,6
\
r\.
-
0,4
\
\
1\
0,2
'\
o \
o 50 100 150 0(
5 10 2
-7,; -Ie
Pulse handling capability rth = f(t) Collector cutoff current

(standardized) ICBO = f(TA)
K VCB=25V
W nA
100 105
5
~II!
'ih
:/
kf> ~.rt
r r- ,.
1 ~ 0.5
0.2 max,/
0.1 /
5 0.05
0.02
0.01 1/
0.005 ,,' /typ.
D=O
2
5 V
10'
1(r3
10-6
D=~
10-5 10- 4
1!:r- T
10- 3 10- 2 10- 1 100 S

5
100
o 50 100 150 O(
-t -li
Siemens 297
BCX69
Base-emitter saturation voltage Ie c= f( VeEsatl Collector-emitter saturation voltage

hFE = 10 Ie = f(VCEsat)
hFE = 10
rnA rnA
10' 10 4
5
100 °C "-
25°C
l/. ~ ~~
-SOO( 100 .(
25°C
-50 .(
fl
I I I 10 2
5
10' I I 10'
S 5
10°
o 0,2 0,4 O~ 0,8 1,0 1,2 V 0,2 0,4 0,6 0,8 V
- VeEso! --VCEsat
Collector current I C = f ( VeE) DC current gain hFE = f (I cl

VCE = 1 V VCE = 1V
rnA
10' 103
5
hFE
5
I
l000( "-
2S0(
-SOOC
~7
I 10 2
l00 0 (
25°C
-SO·(
I I
5
/I I
10'
II I I
S
10° I I I 100 L...l.lJJl.WL...LllliillL...L.L.ilU.llL..LLJ..LJill

o 0,2 0,4 0,6 0,8 1,0 1,2 V 10° 5 1Q1 5 10 2 S 103 S 10 4 rnA
-VeE -Ie
,...~------
290 vit:::I I 1t::1I",
NPN Silicon RF Transistor BF517
• Broadband amplifier and oscillator applications

up to 1 GHz

BF517 LR Q62702-F988 Q62702-F78 SOT 23
Maximum ratings
Collector-base voltage Vceo 20 V
Emitter-base voltage VEeo 3 V
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 299
BF 517

Collector-emitter breakdown voltage V(SR) CEO 15 - - V
Ic = 1 rnA, Is = °
Collector cutoff current Icso - - 50 nA
Vcs = 15 V, Is = °
DC current gain hFE 25 - 250 -
Collector-emitter saturation voltage VCEsat - 0,1 0,5 V
I c = 10 rnA, Is = 1 rnA
Base-emitter saturation voltage VSEsat - - 0,95 V
Ic = 10 rnA, Is = 1 rnA

Transition frequency fT 1 2 - GHz
Ie = 5 rnA, VCE = 10 V, f= 200 MHz
Collector-base capacitance Geb 0,3 0,5 0,75 pF
Vcs = 10V, VSE = 0, f= 1 MHz
Collector-emitter capacitance Gee - 0,26 0,4 pF
Vcs = 10V, VSE = 0, f= 1 MHz
Noise figure F
Ic = 5 rnA, VCE = 10 V, f= 100 MHz - 2,5 - dB
Ic = 5 rnA, VCE = 10 V, f= 800 MHz - 5,0 - dB
300 Siemens
SF 517
Total power dissipation Ptot = f( TAl Transition frequency fT = f (I cl

VeE = 10 V. f= 100 MHz
mW GHz
400 3
l300 i v .... i"'-
\
II
200 I\.
I\.
100
1\
o 1,\ o
o 50 100 150 0( o 10 20 30 mA
-Ti. -Ie
Collector-base capacitance Ccb = f(Veel

f=l MHz
pF
1.0
~
t 0.8 1\
[eb
\
0,6
1\
"- t'-
01+
-... -...
-~~
0.2
o
o 10 20V
-'ie
Siemens 301
Si-N Channel MOS FET Triode BF 543
Preliminary Data
• For RF stages up to 300 MHz

preferably in FM applications
= =
• loss 4 mA, gfs 12 mS
ESD:Electrostatic discharge sensitive device, observe handling precaution!

(taped)
SF 543 LD Q62702-F1230 SOT-23
Maximum Ratings
Drain-source voltage VOS 20 V

Drain current 10 30 rnA
Gate-source peak current ±/GSM 10 mA
Total power dissipation, TA :s 60 ·C Ptot 200 mW
Storage temperature range T stg -55 ... + 150 ·C
Channel temperature Tch 150 ·C
Ambient temperature range TA -55 ... + 150 ·C
Thermal Resistance
Junction - ambient 1 ) I RthJA l:s 450 IKIW
1) Package mounted on alumina t6.7 mm x 15 mm x 0.7 mm
302 Siemens
BF 543
Parameter
ISymbol Imin. Value
Itypo Imax.
IUnit
DC characteristics
Drain-source breakdown voltage V(BR)DS V
ID= 10 llA, -VGS =4 V 20 - -
Gate-source bread own voltage ± V(BR)GSS V
± IGS = 10 rnA, VDS = 0 7 - 12
Gate cutoff current ± IGSS nA
± VGS = 6 V, VDS = 0 - - 50
Drain current IDSS rnA
VDS = 10 V, VGS = 0 1.5 4 6.5
Gate-source pinch-off voltage -VGS(p) V
VDS = 10 V, ID = 20 llA - 0.7 1.5
AC characteristics
Forward transconductance gfs mS
VDs=10V,/D=4mA,f=1 kHz 9.5 12 -
Gate-1 input capacitance Cgss pF
VDS= 10 V, ID=4 rnA, f= 1 MHz - 2.7 -
Reverse transfer capacitance Cdg fF
VDs=10V,/D=4mA,f=1 MHz - 25 -
Output capacitance Cdss pF
VDS = 10 V, ID = 4 rnA, f = 1 MHz - 0.9 -
Power gain (test circuit) Gps dB
VDS= 10 V, ID=4 rnA, f=200 MHz - 22 -
GG =2 mS, GL =0.5 mS
Noise figure (test circuit) F dB
VDS= 10 V, ID=4 rnA, f=200 MHz - 1 -
GG =2 mS, GL =0.5 mS
Siemens 303
SF 543
Characteristics
at Tj =25 °G, unless otherwise specified.
Power dissipation Ptot = f (TA) Typ. output characteristics field

rnW 10 = f (Vos)
300 rnA
! 10
--
Vg:O,4V
.....
8
I
", -- ~
200
l..- ~ 0,2V
1
\ ...-
6
r\ , 1
1
I
I
I I I OV
i I 4
100 I
\1
-0,2V
\t1 If J
o ~ -OtV
o 50 100 150 o
0(
o 10 20V
-T,.. -Vos
Gate transconductance gls = f (VGs) Drain current 10 = f (VGs)
Vos = 10 V, loss =4 m A, f= 1kHz Vos = 10 V
rnS rnA
15 10
gfs
/
10 I
8
r-.
r
10 I \
t /
I \
I \ /
I
I \ 4
5 I /
\
2
/
I "'- J
I
o o l/
-0,1 0,1V -0,1 o
° -\{;s
0,1V
304 Siemens
BF 543
Gate Input capacitance Cgss = f (VGs) Output capacitance Cdss = f (Vos)

Vos = 10 V, loss =4 rnA, f= 1 MHz VGs=O,/oss=4 rnA, f=1 MHz
pF pF
5 5
T' 3
4
, V
f..- - 2
1\1'--
o o
-0,1 o O,1V o 5 10 15V
-Its -Vos
Reverse transfer capacitance Cdg =f (Vos) Gate 1 Input admittance Y11s
VGs=O,/oss=4 rnA, f=1 MHz Vos=10 V,/oss=4 rnA, VGs=O
(source circuit)
fF mS
50 15
b"s
f=800MHz
\ t ~OMH~
V
30
\ 10
/600MHz
\ JJ
1/ rOO~HZ
20
1\ - ~400;MH~
1'-- 5- 3010MHz
10 f,1200~HZ
1 I
100MHz
I I
50lMH f
o o
o 5 10 15V o 0,1 0,2 0,3 0,4 Q5ms
-Vos ---g11s
Siemens 305
BF 543
Gate 1 transconductance Y21S Output admittance Y22s

Vos = 10 V, loss = 4 rnA, VGS = 0 Vos = 10 V, loss = 10 rnA, VGS =0
(source circuit) (source circuit)
mS mS
o S
SrIZ~
4
~+u
j'I00MHz--
10~MHZ
1/600MHz
I I
,,I, lliOOMHZ
rO?MHZ
-S
J.I. 1/ 1100~HZ
yrHj 1300~H~
4~OMHV
SOOM~z I
"20~M1
if
I I
I- 600~H~ 100 M~i
f=800MmMHZ S07 HZ
-10 o
o S 10 1SmS o 0,1 0,2 0,3 0,4 O,SmS
-9Z1S -9zz,
Test circuit for power gain Gp and noise figure F
'=200 MHz
Input Output
60Q 1nF 1SpF 15pF 1nF 60Q
1 ;;---1270
kQ
I
1nF
!
BBS15
;~ fS i O
'
~
t D.}
Iot"n
306 Siemens
PNP Silicon RF Transistor BF550
• For amplifiers in common emitter configuration up to 300 MHz

• Specially suitable for mixer applications in AM/FM radios and
VHF/TV tuners
• Low collector-base capacitance due to shield diffusion
• Controlled low output admittance

BF 550 LA Q62702-F547 Q62702-F944 SOT 23
Maximum ratings
Collector-base voltage VCBO 40 V
TA = 25 DC

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 307
BF550

Ic = 1 rnA, IB = 0
Ic= 1°ftA,h=0
h=10ftA,Ic=0
Collector cutoff current ICBo - - 100 nA
VCB = 30 V, h = 0
I c = 1 rnA, VCE = 10 V
Base-emitter voltage VBE - 0,72 - V

Ic = 1 rnA, VCE = 10 V, f= 100 MHz
Collector-base capacitance Ceb - 0,33 - pF
VCB = 10V, VBE = 0, f= 1 MHz
Collector-emitter capacitance Cee - 0,67 - pF
VCB = 10V, VBE = 0, f= 1 MHz
Noise figure F
Ic = 1 rnA, VCE = 10 V, f= 100 kHz,
Rs=300O - 2 - dB
Ic = 2 rnA, VCE = 10 V, f= 100 MHz,
Rs = 600 - 3,4 - dB
Four-pole characteristics,
common-emitter configuration
Ic=1mA,VcE=10V
f= 0,45 ... 10 MHz glle - 550 - fts
Clle - 17 - pF
IY2lei - 35 - mS
C22e - 1,3 - pF
f= 450 kHz g22e - 5 8 fts
f= 10 MHz g22e - 5 10 fts
308 Siemens
BF 550
Total power dissipation P'o' = f (TA) Current gain hFE = f (l e)

VeE = 10V
mW
400
:3 _ _
f!ot
1 300 r 2
10 _ _
1,\
200
1,\
'\
100
o '\ 100 L...C...l..J..l-UW--L-LLllillL-'-'--'..LU.UL--L.UU-Cllll

o 50 100 150 o( 10-2 5 10- 1 5 10° 5 10' 5 10 2 rnA
-T,. -Ie
ColIsctor-emltter saturation voltage Collector current Ie = f (VBE)

Ie = f(VeEsatl VeE = 10V
hFE = 10
rnA
102
Ie 5 Ie
! 10' '/ - ! 10'

/
1 I
10-
, 10-2
o 0,1 0,2 0,3 0,4 0,5 V 0,5 0,6 0,7 0,8 0,9 1,0 V
--~hsat
Siemens 309
BF550
Collector cutoff current I caD = f ( TA) Transition frequency tT = t (l c)

Vca = 30V t=100MHz
nA MHz
10 4 600
5
f,
'/max.
f SOO ~ 1-1-
f;s--
~ .... r-- i"i"
I'-.....
'-'" 400
~... V I,... i"- r"-, 10
V 1\ 5'\
300
VeE = 2V
Vtyp.
200
100
10-1 o
o 50 100 150 0( o 5 10 15 mA
-1A
Collector-base capacitance CCb = t(Vca) Output conductance g22e = t(l cl

t=1 MHz VeE = 10 V, t= 500 kHz
pF mS
1,0 20
1/
18 I
gzz. I J
16 I
J
t 14 i II
12
- -max
If7J typo
0,5 1\ 10 I
i J
~
i""'-- ........
-- 8
4
/11
'J
; I
I
IL I
2 "
I
o o
o 10 20 V o 2 3 4 5 mA
-\'cB
310 Siemens
BF550
Forward transfer admittance IY21el = f(I c) Forward transfer admittance Y21 e

f= 10,7 MHz VCE= 10V
rnS
400
15
~
250
~~ VCE =5V-
200
/
150
V
100 /
50
/
/
o
o 10 15 rnA 90' 75' 60'
-Ie
Siemens 311
• General RF small-signal applications up to 300 MHz,

amplifier, mixer and oscillator in circuits

BF 554 CC Q62702-F551 Q62702-F1042 SOT 23
Maximum ratings
TA = 25°C
Thermal resistance RthJA :$ 450 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
312 Siemens
BF554

Collector-emitter breakdown voltage V(BR)CEO 20 - - V
Ic= 1 mA, IB =0
VCB=20V, /e=0
Ic = 1 mA, VCE = 10V
Ic=1mA,VCE=10V

Ic = 1 mA, VCE = 10 V, f= 100 MHz
Noise figure F
VCE = 10 V, Ic = 1 mA
f= 200 kHz, gs =2 mS - 1,5 - dB
f= 1 MHz, gs =1,5 mS - 1,2 - dB
f= 100 MHz, gs = 10 mS - 3 - dB
Collector-base capacitance Ccb - 0,6 - pF
VCE = 10 V, VBE = 0, f= 1 MHz
Output conductance g22e - 4 - IlS
Ic= 1 mA, VCE= 10V, f=O,5···10MHz
Siemens 313
BF554
Total power dissipation Ptot = f(TA) DC current gain h FE = f (I cl

VCE = 10 V
rnW
400
10
3
_111
f'
'r"
1 300
200 1"-
1,\
'\
1 0 1 l 1 l i. .
100
'\
o 1\
o 50 100 150 DC
-~
Collector-emitter saturation voltage Collector current I C = f (VBE)

Ie = f(VcE.at) VCE = 10V
hFE = 10
rnA
10 1
Ie 5 Ie
/
t I t 101
1Q1
, /
5
1 I
10-1 10-1
o 0,1 0,2 0,3 0,4 0,5 V 0,5 0,6 0,7 0,8 0,9 1,0 V
-VCEsat
314 Siemens
BF554
Collector cutoff current I CBO = f ( TAl Transition frequency fr = f (l c)

VCB = 20V VCE = 10V
f=100 MHz
nA MHz
10· 500
S
....,
l/max.
/ r- .....
1/ "'
~ .... /
I
typo
200 ,
100
, 1..1 o
50 100 150 0( o 10 20 mA
-r,.
Noise figure F = f(f) Collector-base capacitance Ccb = f(VeB)

VCE = 10 V, Ic = 1 rnA, f=1 MHz
Rs=60n
dB pF
S 1,5
F
4
r I
'/ 1,0
\
\
'" " r-
1\ 0,5
o o
10-' S 10° 5 10' 5 101 5 103 MHz o 10 20 V
-f -\'cB
Siemens 315
• Suitable for oscillators, mixers and self-oscillating

mixer stages in UHF TV tuners .

BF 569 LH Q62702-F548 Q62702-F869 SOT 23
Maximum ratings
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
316 Siemens
BF569

I c = 1 rnA, I B = 0
VCB = 20 V, IE = 0
DC current gain hFE 20 50 - -
Ic=3mA,VCE=10V

Ic = 3 rnA, VCE = 10 V, f= 100 MHz
Collector-base capacitance Gcb - 0,32 - pF
Vce = 10V, VeE = 0, f= 1 MHz
Collector-emitter capacitance G ce - 0,15 - pF
VCE = 10 V, VeE = 0, f= 1 MHz
Power gain, common base Gp - 14,8 - dB
Ic = 3 rnA, Vce = 10 V, f= 800 MHz
RL = soon
Noise figure F - 4,5 - dB
Ic = 3 rnA, Vce = 10 V, f= 800 MHz
Rs = 60n
Siemens 317
BF569

f= 100 MHz, VCE = 10 V
rnW MHz
400 1200
f,
!fat
( 1000
.........
1 300 V "-
800
\
\
/
200 "- 600
\
"- I\. I
I\.
"00
100
200
1\
o 1\ o
o 50 100 150 .( o 5 10 rnA
-T" --Ie
Collector capacitance
Ccb = f(VCB)
f=1 MHz
pF
1,0
feb
!
~.
0,5
\
I\.
........
--- r-
o
o 10 20 V
318 Siemens
PNP Silicon RF Transistor BF 579
• Suitable for low distortion, low noise

VHF/UHF amplifier and UHF oscillator
applications in TV tuners
• High transition frequency of 1.6 GHz
at typical operating current of 10 mA

BF 579 LJ Q62702-F552 Q62702-F971 SOT 23
Maximum ratings
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 319
BF579

Ic = 1 rnA, IB = 0
Collector cutoff current ICBO - - 100 nA
VCB = 20V, IE = 0
DC current gain hFE 20 - - -
Ic = 10 rnA, VCE = 10 V

Transition frequency fr - 1,6 - GHz
Ic = 10 rnA, VCE = 10 V, f= 100 MHz
Collector-base capacitance Ceb .- 0,41 - pF
VCB = 10V, VBE = 0, f= 1 MHz
Collector-emitter capacitance C ee - 0,16 - pF
VCE = 10 V, VBE = 0, f= 1 MHz
Power gain, common base Gp - 16 - dB
Ic = 10 rnA, VCB = 10 V, f= 800 MHz
RL = soon
Noise figure F
Ic = 10 rnA, VCB = 10 V, f= 800 MHz
Rs =60n - 4 - dB
Ic = 10 rnA, VCB = 10 V, f= 200 MHz
Rs =60n - 2,9 - dB
320 Siemens
BF 579
Total power dissipation Ptat = f( TA) Collector-base capacitance

Ccb = f(Vea)
f=l MHz
mW pF
400 1.0
'tot
1 300 \\
"-
200 I"I\. o,s
\
'r--.. r--..
100
I\.
-
I-- I--
1,\
o 1'\
o 50 100 150 0( o
-T,.
o 10 lOV
Transition frequency fT = f (le)

f= 100 MHz, VeE = 10 V
MHz
2000
'r
..... ,.....
1 l/ t-.... r-....
I'"
f7
1000
o
o 10 20 mA
-Ie
Siemens 321
• Suitable for common emitter RF, IF amplifiers

• Low collector-base capacitance due to contact
shield diffusion

BF599 NB Q62702-F550 Q62702-F979 SOT 23
Maximum ratings
Collector-emitter voltage Vceo 25 V
Emitter-base voltage Veeo 4 V
TA = 25°C
Thermal resistance RthJA ::;;450 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
322 Siemens
BF 599

Ic = 1 mA, IB = 0
VCB=20V, Ie=O
Ic=7mA, VCE=10V
Collector-emitter saturation voltage VCEsat - 0,15 - V
Ic = 10 mA, IB = 1 mA
I c = 7 mA, VCE = 10 V

Ic = 5 mA, VCE = 10 V, f= 100 MHz
Collector-base capacitance Cob - 0,35 - pF
VCB = 10V, VBE = 0, f= 1 MHz
Collector-emitter capacitance C oe - 0,68 - pF
VCE = 10V, VBE = 0, f= 1 MHz
Optimum power gain') Gp - 43 - dB
Ic = 7 mA, VCE = 10 V, f= 35 MHz
Forward transfer admittance IY21el - 175 - mS
Ic = 7 mA, VCE = 10 V, f= 35 MHz
Siemens 323
BF599
Total power dissipation Ptot = ((TA) DC current gain hFE = ((I e)

VCE = 10 V
mW
400
l300
200 \
1'\
I\.
......
100
\
o 1'\ 100~~~-LUWillL~~lli-LLllllW
o 50 100 150 °c 10-1 5 10- 1 5 100 5 10' 5 101 rnA

-J;, -Ie
Collector current Ie = ((VSE) Collector-emitter saturation voltage,

VCE = 10V Ie = ((VCEsat)
hFE = 10
rnA rnA
1)1 101
5
Ie 5
V
10'
t If
5 10'
I
5
/
I
1 I 5
10-1 1
0,5 0,6 0.7 0,8 0,9 1.0 V 0,1 0,2 0,3 0,4 0,5 V
--I;hsat
324 Siemens
BF599
Collector cutoff current leBO = f (TA) Transition frequency fT = f(l c), f = 100 MHz
VCB=20V
nA MHz
104 600
5
..- ........
leBO
V
1""-
1/ .......,
~
10 3
5
J=I= V !\
V- \
max.
400 \
.... ,1-" V 1\ \
\ \ \
300
10'
V \
VcE =2V r-~ l~V- I -
5 200
typo
100
, o
50 100 150·[ o 10 20 mA
~TA --Ie
Collector-base capacitance Ccb = f (V CB) Forward transfer admittance IY21e I= f(l cl

f = 1 MHz f= 35 MHz
pF mS
1.0 300
/.. "\
~ 1\
200 ~h \
\\ I( 1\ 15_
1 10,_ -
0.5 1\ r 1\ 5
"b-.
.................
--- 100
II
I
/ "
VeE~2V
/
1/
o 10 20 24mA
o 10 20 V
-Ie
--VcB
Siemens 325
NPN Silicon High Voltage Transistor BF622
• Suitable for video output stages in TV sets E

• Low capacitance
• Complementary type: SF 623 (PNP)

SF 622 DA Q62702-F568 Q62702-F1052 SOT 89
Maximum ratings
Collector-emitter voltage
(RBE = 2,7 kn) VCER 250 V
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
326 Siemens
BF622

Collector-emitter breakdown voltage
Ic = 1 mA V(BR) CEO 250 - - V
Ic = 10 !-lA, RBE = 2,7 kQ V(BR)CER 250 - - V
Ic=10!-lA
Ie = 10 !-lA
VCB = 200 V - - 100 nA
VCB = 200 V, TA = 150°C - - 20 llA
Collector cutoff current ICER
VCE = 200 V, RBE = 2,7 kQ - - 1 llA
VCE = 200 V, RBE = 2,7 kQ, TA = 150°C - - 50 llA
Emitter cutoff current IeBO - - 10 llA
VEB = 5V
DC current gain') hFE 50 - - -
I c = 25 mA, V CE = 20 V
Ic=10mA,IB=1mA
Base-emitter saturation voltage ') VB Esat - - 1 V
Ic = 10 mA, IB = 1 mA

Ic = 10 mA, VCE = 10 V, f= 20 MHz
VCB = 30V, f= 1 MHz
') Pulse test: t:5, 300 lls, D = 20/0.
Siemens 327
BF622
Total power dissipation Ptot = (( TA) Output capacitance Cob = ((VCE)

f= 1 MHz
W pF
1,2 4
r
1,0
1\
f\
3
0,8
1\
1\ 1\
0,6 2
1
1\
0,4
1\
r\
1\
"" ~
0,2
1\
o r\
o
o 50 100 150 ·C o 10 20 30V
-1,;.
Pulse handling capability rth = ((t) Transition frequency fT = (( I c)

(standardized) VCE = 10V, (= 20 MHz
K
'iii
10°
5
J
r 1 ..-t-
1.-1 III I
• 1
0.5
0.2
1 2
5
lO-2
I t-O=O
0.1
0.05
0.02
0.01
0.005
5
17
S
D=ft~
2
T
10""3
10-6 10-5 10- 4 10-3 10- 2 10- 1 1QO 5
-t
328 Siemens
BF622
DC current gain h FE = f (l c) Collector current I C = f (VBE)

VCE = 20V VCE = 20V
rnA
102
5
100 '--'....u.u=-'-.w..LUllL.--'-'~.w-.LJ..ll.llW I
10.2 10·' 10° 10' 10 2 rnA 0,5 1V
-Ie
Collector cutoff current I CBO = f ( TA)

VCB = 200 V
1/
max ~/
f .... V
typ. ,
, /
50 100 150 O(
-1A
Siemens 329
PNP Silicon High Voltage Transistor BF623
• Suitable for video output stages in TV sets E

• Low capacitance
• Complementary type: BF 622 (NPN)

BF 623 DB Q62702-F567 Q62702-F1053 SOT 89
Maximum ratings
Collector-emitter voltage
(RBE = 2,7 kQ) VCER 250 V
TA = 25°C
Thermal resistance RthJA :0; 125 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
330 Siemens
BF623

Ic = 1 mA V(BR) CEO 250 - - V
Ic = 10 /lA, RBE = 2,7 kQ V(BR) CER 250 - - V
Ic=10/lA
lE=10/lA
VCB=200V - - 100 nA
VCB = 200 V, TA = 150°C - - 20 /lA
VCE = 200 V, RBE = 2,7 kQ - - 1 /lA
VCE = 200 V, RBE = 2,7 kQ, TA = 150°C - - 50 /lA
Emitter cutoff current lEBO - - 10 /lA
VEB = 5 V
Ic=25mA, VCE=20V
I c = 10 mA, I B = 1 mA
Ic = 10 mA, IB = 1 mA

Ic = 10 mA, VCE = 10 V, f= 20 MHz
VCB = 30V, f= 1 MHz
') Pulse test: t:$ 300 /ls, D = 2010.
Siemens 331
BF623
Total power dissipation Ptot = f (TA) Output capacitance Cob = f(VCE)

f= 1 MHz
W pF
1,2 4
1"1,0
1\ 3
0,8 1\
\
\ \
0,6 2 \
~
0,4 \ r-...
\ ....
\
0,2
1\
o \ o
o 50 100 150 0 (
o 10 20 30 V
--T" -\0(,
Pulse handling capability rth = f (t) Transition frequency fT = f (l cl

(standardized) VCE = 10 V, f= 20 MHz
K
W MHz
10° 10 3
'ih 5
1,...1""'" 5
t , ,
~III
--~ 0.5
0.2 2
0.1
5 ~ 0.05
0.02
0.01
0.005
0=0
2 5
v
5
~
2
o-!I
-r
T
10-3
10-6 10-5 10- 4 10-3 10- 2 10-' 10° s 5 10'
-t
332 Siemens
BF623
Collector current I c = f (VSE) DC current gain hFE = f (I c)

VCE = 20 V VCE = 20V
mA
10 2
5
I
/
II
L 100 '----'---'-'"Will-'-LL'-'.illL..--'--'-LLililL--L.L-LLlliU
0,5 1V 10-2 10-' 10° 10' 102mA
-Ie
Collector cutoff current I cso = f ( TA)

Vcs = 200 V
nA
10'
5
leBO
max ,/
-'"
,.,.
typ_
10'
5
, 1/
50 100 150 °c
-7;,
Siemens 333
• Particularly suitable for application in VHF tuner

oscillators

BF660 LE Q62702-F549 Q62702-F982 SOT 23
Maximum ratings
Emitter current IE 30 mA
TA = 25°C
Storage temperature range Tstg -65·.·+150 °C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
334 Siemens
BF660

Ic=1mA,h=0
Ic= 10 11A,h=0
h= 10 11A, I c=0
VCB=20V, h=O
lc=3mA, VCE=10V
~C characteristics Symbol min typ max Unit

Ic = 5 mA, VCE = 10V, f= 100 MHz
VCB = 10 V, VBE = 0, f = 1 MHz
VCE = 10 V, VBE = 0, f= 1 MHz
Siemens 335
BF660
Total power dissipation P tot = f (TA) Transition frequency fT = f (I c)

VCE = 10 V, f= 100 MHz
mW MHz
400 1200
?'ot
1 300
f
f..
1000
600
1\
1\ /'" r-....
200
'\.
'\.
600
If ,
400 1
100
200
\
o 1\ o
o 50 100 150 .( o 10 20 mA
-T,.
Collector-base capacitance Ccb = f(Vcs)

f=1MHz
pF
1.5
1.0
\
I'\.
0.5
i"'--
-- - r-
,0
o 10 20 V
-\'cB
336 Siemens
NPN Silicon High-Voltage Transistors BF 720; BF 722
• Suitable lor video output stages in TV sets

and switching power supplies
• Low capacitance E
• Complementary types: SF 721/723 (PNP)
Type Marking Ordering code (12-mm tape) Package*

SF 720 SF 720 Q62702 - F1238 SOT-223
SF 722 SF 722 Q62702 - F1306 SOT-223
Maximum Ratings
Parameter Symbol BF720 BF722 Unit
Collector-emitter voltage VCEO - 250 V
VCER 300 - V
Total power dissipation, TA ::5 25°C 11 Pl01 1.5 W
Storage temperature range Tsig -65 to + 150 °C
"
Thermal Resistance
Junction - ambient 1) I RlhJA ::583.3 IKIW
1) Package mounted on an epoxy printed circuit board 40mm x 40mm x 1.Smm
Mounting pad lor the collector lead min 6cm 2
.) For detailed dimensions see chapter Package Outlines.
Siemens 337
BF 720; BF 722
Characteristics
Parameter Unit
DC Characteristics
Collector-emitter oreakdown voltage V(BR)CEO
Ic = 1 mA, IB = 0 BF 722 250 - - V
Collector-emitter breakdown voltage V(BR)CER
Ic = 10 llA, Rse = 2. 7kn BF 720 300 - - V
Collector-base breakdown voltage V(BR)CSO
Ic = 10 llA, Is = 0 BF 720 300 - - V
BF 722 250 - - V
Emitter-base breakdown voltage V(BR)eBO

Ie = 10 llA, Ic = 0 5 - - V
Collector-base cutoff current leBo

Vcs = 200 V, Ie = 0 - - 10 nA
Collector-emitter cutoff current leeR
Vee = 200 V, Rse = 2.7kn - - 50 nA
Vce = 200 V, Rse = 2.7kn,TA = 150°C 10 llA
Emitter-base cutoff current leso
VEB = 5 V, Ie = 0 - - 10 llA
IC=25 mA, Vce=20 V 50 - - -
Collector-emitter saturation voltage 1) VOe,al
Ie = 30 rnA, Is = 5 rnA - - 0.6 V
AC Characteristics
Ic = 10 mA, VCE = 10 V, ,= 100 MHz 'T - 100 - MHz
Collector-base capacitance Cob
VCB =30 V, Ie =0. f= 1 MHz - 0.8 - pF
1) Pulse test conditions: t ~ 30011S; D = 2%
338 Siemens
BF 720; BF 722
Total power dissipation Plol = '(TA) Collector cutoff current Iceo = '(TA )
nA Vce = 200 V
2.0 ,-- --,- .-- - - -.,--,--", IO J
W , - . - - --1-1- -- - -I--HI-I-+-I
1-
5
P.o' I- - _. -- -- -- -- I-
t 1.5:= --1- -I- - - .- - - - -I- m xV /
1--1-1- ---
I-- [\ - I- --- - - I-
1--- ---.~ I- --
I- ........ t p.
to f\- la'
\'-1--
,,-
---
--- _.- 5
I-
I- -- - -
1\- - - 1/
'\ /
os
1-1- --- -_. -. -f\-
1-1-
1--- --- ---
I- .-. - -- -l- \; 1
o '-'-- -
0 50 100 °C 150 50 100 150 'C
- - TA -Ii
Collector current Ie = '(VeE)

rnA VCE = 20 V
101
5
II
- I
10'1 I
o 0.5 1 V
--Vat
Siemens 339
BF 720; BF 722
DC current gain hFE = ((I c) Transition frequency (T = ((Ic)

VeE = 20 V MHz VCE = 10 V, (=100 MHz
hFE
1:
3
1116111 10
1
EEmlEIEtII
I,:,. . . .
--Ie
Collector-base capacitance Cob = ((Vce)

pF'/C = 0, (= 1 MHz
4
II
1\
2
-
t-I-
o
o 10 20 30V
---VcB
340 Siemens
PNP Silicon High-Voltage Transistors BF 721; BF 723
• Suitable for video output stages in TV sets

• Low capacitance
• Complementary types: SF 720/722 (NPN)

BF 721 BF 721 Q62702 - F1239 SOT-223
BF 723 BF723 Q62702 - F1309 SOT-223
Maximum Ratings
Parameter Symbol BF721 BF723 Unit
Collector-emitter voltage VCEO - 250 V
VCER 300 -
Total power dissipation, TA:s 25°C \) P IOI 1.5 W
Storage temperature range TSlg -65 to + 150 °C
Thermal Resistance
Junction - ambient 1) :s 83.3 IKiW
Siemens 341
BF 721; BF 723
Characteristics
Parameter I I
Symbol Value.
min. Ityp. Imax. .I
Ul1lt
DC Characteristics
Collector-emitter .breakdown voltage V(BR)CEO
Ic = 1 mA, IB = 0 SF 723 250 - - V
Collector-emitter breakdown voltage V(BR)CER
Ic = 10 pA, RBE = 2.7kn SF 721 300 - - V
Ie = 10 pA, Is = 0 8F 721 300 - - V
SF 723 250 - - V

IE = 10 pA, Ic = 0 5 - - V

VcB =200 V, IE=O - - 10 nA
Collector-emitter cutoff current ICER
VcE =200 V, RBE=2.7kn - - 50 nA
VcE =200 V, R sE =2.7kn,TA =150°C 10 l1 A
VEB = 5 V,Ic = 0 - - 10 Il A
Ic = 25 rnA, VCE = 20 V 50 - - -
Collector-emitter saturation voltage VCEssl
Ic=30 mA,/B =5 rnA - - 0.6 V
AC Characteristics
Ic= 10 rnA, VCE = 10 V, f= 100 MHz - 100 - MHz
VcB =30 V, Ic=O, f= 1 MHz -. 0.8 - pF
1) Pulse test conditions: t ;;; 300ps; D = 2%
342 Siemens
BF 721; BF 723
Total power dissipation Plol "" r(TAI Collector cutoff current I CBO = r(TAI
nA' VCB = 200 V
2,0 r-r-..-,--.-r-r- 10 1
W rt-r'j~~-~'rt~+4-4-~~ S
-,-_. _.- - -- - _.-
":.. I- -t--I-H-j-I-I-
t I.S ~.__ ~
m x,,1 1I
-1-
__
--I- -+-f-f-f-+--l
I- - - . - \
:= \-:- i--'k 1/ t p,
1,0 - ~ -t--I-+-l-l- 10'
1 - - --I-l--+-t'U- -I-
f-- -- -- - f\ -t-t-+-+-I-l 5
. - _00 \1--l-+4--H
~_:- __ oo ,
1I
O,S 1-++1--+_-1-
__-1:- r= : - -= _-f-J_\~-+_~~
------ - :--
- --1- - ------- -1--t-1-.,•...-.
Ol-L~-J--~--L-~-~'-L-'~_J~Li_~\J 10-1
o so 100 DC ISO o SO 100 150 DC
-1i. -/A
Collector current Ie"" r(VBEI

mA VCE = 20 V
101
5
I
I
I
-
lO- I
S
10-1
o 0.5
l- f-- I--
1 V
Siemens 343
BF 721; BF 723
DC current gain hFe = '(lc) Transition frequency 'r = f (I cl

VCE = 20 V MHz VCE = 10 V, f= 20 MHz
10l IO l
5
10 1
f-
10
, 5
17
10' rnA 10 1 5 'lJ1
Collector-base capacitance COb = ,(VCB)

pF Ic = 0, f = 1 MHz
4
IT
f\
o
o 10 20 30 V
-$6
344 Siemens
NPN Silicon RF Transistor BF 770 A
• Low-noise broadband transistor for frequencies

up to 2 GHz at collector currents up to 30 mA
• Specially suitable for IF amplifiers in TV-sat tuners
as well as for VCR modulators

BF770 A LS Q62702-F 1068 Q62702-F 1080 SOT 23
Maximum ratings
Collector. current Ic 50 mA
TA = 25 DC

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 345
BF 770 A

Ic=1mA,IB=0
VCB = 5 V, Ie = 0
Ic=30mA, VCE=5V
Collector-emitter saturation voltage
,-" ___ A ,- __ A
VCEsat - 0,13 0,5 V
Ie - OU 1111-\,18 -- $ 1111"\
T T

Transition frequency fT - 5,5 - GHz
Ic = 30 mA, VCE = 5 V, f= 200 MHz
VCB = 5 V, VBE = 0, f= 1 MHz
VCB = 5 V, VBE = 0, f= 1 MHz
Noise factor F - 2 - dB
Ic = 10 mA, VCE = 5 V, f= 800 MHz
Power gain Gp - 13 - dB
Ic = 30 mA, VCB = 5 V, f= 800 MHz
346 Siemens
BF770A
Total power dissipation P tot = {( TA) Transition frequency {T = {( I cl

VCE = 5 V, {= 200 MHz
mW GHz
400 6
~
~ I--
1
1 ./
trot 1/
1 300 /
I
4
II
/
200
1\
[\..
II
,,\
/ i
100
I
\
I
- '\
'\
a a
a 50 100 150 O( o 10 20 30 40 50 rnA
-7;.
Collector-base capacitance Ccb = {(VeB) Noise figure F = f (/ cl

f= 1 MHz VCE = 8 V
pF dB
1,0 6
F Rs =50n ....
~
\ .....
t -
--..., -II~---
4
0,6 f--~d-+-+---i-+---t--+-+-I \ f=2GHz
\.
i I!
, I
i
3
11.l,..--_
s 50Q ....
1-:
1
\ f=O,8G~
0,41 I .I-+-+--L--+--Ir-1 kbP :::rsJ;, -
t-n-t-I r
+--t.
2
I i
\~ ;::;..., .... ~ ::::::F==F'"
'--+-H-_'f---.;'f--lf--l -
~;~;;::: :;:;;
±
0.2 . ! f=10HHz
Il II I 1'1- kn
L ~JJ~t1-rl fj Zr'l
1-1-
a o
a 10 20 V o 10 20 3l rnA
--Vcs -Ie
Siemens 347
NPN Silicon RF Transistor BF 771
• For low noise, high gain amplifiers up to 2GHz

• For linear broadband amplifiers
• For modulators and amplifiers in VCR-tuners
Type Marking Ordering code for Package

versions on 8 mm-tape
BF 771 RB Q62702-F990 SOT 23
Maximum Ratings
Collector-emitter voltate VCEO 12 V

Collector-emitter vOltage ( VBE =O) VCE. 20 V
Collector current Ie 80 mA
Total power dissipation ( TA ", 60°C ')} p,.t 300 mW
Storage temperature range T.tg -65 to +150 ·C
Ambient operating temperature range TA -65 to +150 °C
Thermal resistance
Junction-ambient '} RthJA ",300 KfIN
'} Package mounted on alumina 15mm x 16.7mm x 0.7mm
348 Siemens
BF 771
DC characteristics (TA = 25°C) min typ max

Ic= 1 rnA, IB = 0 V(BR)CEO 12 - - V
Collector-emitter cutoff current

VCE = 20V, VBE = 0 ICES - - 100 pA
Collector-base cutoff current

VCB=10V, Ie = 0 ICBO - - 50 nA
Emitter-base cutoff current

VEB = lV, Ic=O lEBO - - 1 pA
DC current gain
Ic = SmA, VCE = BV hFE - 90 - -
IC = 30mA, VCE = B V - 100 -

Ic = SOmA, IB = SmA VCEsat - - 0.4 V
Siemens 349
BF 771
AC characteristics (TA = 25°C) min typ max
Ic= SmA,VCE = 8V,f= 200MHz fr - 3.5 - GHz
Ic = 30mA, VCE = 8V,f= 200MHz - 7 -

Collector-base capacitance
VCB = 10V,VBE = Vb. = O,f= IMHz Ceb - 0.68 - pF
Collector-emitter capacitance
VCE= 10V, VBE= Vb. = O,f= lMHz Cee - 0.24 - pF
Input capacitance
VEB = 0.5 V, Ic = it = 0, f= lMHz Cibo - 2.2 - pF
Output capacitance
.
,VCE = 10V,VBE= Vbe= O,f=lMHz Cobs - 0.95 - pF
c
Noise figure
Ic= SmA,VCE= 8V,f= 10MHz,
zs= 750
F - 0.8 - dB
Ic = 30mA, VCE = 8V,f = 800M Hz,

Zs=ZSopt
- 1,7 -
Ic = 30mA, VCE = 8V,f=
Zs= son
I GHz, - 2 -
Power gain
Ic = 30 mA,vCE = 8V,f = 800M Hz, Gpe - 13.5 - dB
zs= 500 ZL=ZLOpt
Transducer gain
Ic = 30mA,vCE = 8V,f=
zo= son
1 GHz, iS21ei2 - 11.5 - dB
Linear output voltage

two tone intermodulation test
Ic=40mA,VCE= SV,d'M = 60dB,
f, = 806MHz,f2 = 810MHz,
Vo' = Vo2 - 250 - mV
ZS=ZL= son
Third order intercept point
Ic = 40mA, VCE = SV,f=800MHz 1P3 - 31 - dBm
350 Siemens
BF 771
Common emitter S - parameters
5".522 = f (f) • Z-plane
Ie = 30mA. VeE = 8V. Zo = son Ie = 30mA, VeE = 8V. Zo = son
... j50
., GR. -- _-'r-_
90·
- jsO - 90·
Siemens 351
• For low noise, high gain amplifiers up to 2GHz

• For linear broadband amplifiers
• For modulators and amplifiers in VCR-tuners sfilwE
E~C
BF772 RA QS2702-F1192 SOT 143
Maximum Ratings
Collector-emitter voltate VCEO 12 V

Collector-emitter voltage ( VeE =0) VCES 20 V
Total power dissipation ( TA :5 SO·C ')) fI.t 300 mW
Junction temperature 7j 150 ·C
Storage temperature rangE: T.t. -S5to +150 ·C
Ambient operating temperature range TA -S5to +150 ·C
Thermal resistance
Junction-ambient ') RthJA :5300 K!W
') Package mounted on alumina 15mm x 1S.7mm x 0.7mm
352 Siemens
BF772
DC characteristics (TA = 25°C) min typ max

le=1 mA, Is=O V(SR)eEO 12 - - V

veE = 20V, VSE=O ICES - - 100 lI A
Collector-base cutoff current

Vcs=10V, IE=O leBO - - 50 nA
Emitter-base cutoff current

- -
DC current gain
VEa = lV, le=O lEBO
.
1 lI A
Ic = SmA, VCE = 8V hFE - 90 - -

IC=30mA, VCE= 8V - 100 -

Ic = SOmA, la = SmA VCEsat - - 0.4 V
Siemens 353
BF772
AC characteristics (TA = 25°C) min typ max
Ic= SmAYCE = av J = 200M Hz fr - 3.5 - GHz
Ic = 30mA, VCE = 8V.f= 200M Hz - 7 -

Collector-base capacitance
VCB = 10VYBE = Vbe = oJ= lMHz Ccb - 0.6 - pF
Collector-emitter capacitance
VCE= 10V, VBE=Vbe=O,f= lMHz Cce - 0.33 - pF
Input capacitance
VEB=O.SV,/c=;,=O, f= lMHz Cibo - 2.3 - pF
Output capacitance
veE = 10V, VBE = Vbe = o,f= lMHz Cobs - 0.95 - pF
Noise figure
Ic= SmA,vcE = 8V,f= 10MHz, F - 0.8 - dB
Zs= 7sn
le= 30mAYeE = 8V.f= 800M Hz, - 1,6 -
Zs = ZSopt
Ic = 30mA, VCE = 8V.f= 1 GHz. - 1.9 -
Zs= son
Power gain
Ie = 30 mA, VeE = 8V,f=800MHz. Gpe - 15 - dB
zs= son ZL=ZLopt
Transducer gain
Ic = 30mA, VCE = aV.f= 1 GHz, 5
1 21el 2 - 13.5 - dB
zo= son
Linear output voltage

two tone intermodulation test
Ic=40mA,VCE= SV.d'M = 60dB, VOl = V0 2 - 250 - mV
f, =806MHz.f2=810MHz.
Zs= ZL= son
Third order intercept point
Ie = 40mA, VCE = SV. f= 800MHz 1P3 - 31 - dBm
354 Siemens
BF772
Common emitter 5 - parameters
5".522 = f (f), Z-plane
Ie = 30mA, VeE = 8. Zo = son Ie = 30mA, VeE = 8V, Zo =son
+j50 90·
- j50 - 90·
Siemens 355
• Broadband amplifier, mixer, oscillator,

and switching applications up to 2 GHz
• Specially suited for use in TV-sat and UHF TV tuners

BF 775 LO Q62702-F991 Q62702-F102 SOT 23
Maximum ratings
Emitter-base voltage VEBO 2,5 V
TA = 25°C
Storage temperature range T stg -65···+150 °C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
356 Siemens
BF775

Ic = 1 rnA, Is = 0
Collector cutoff current Icso - - 50 nA
Vcs = 10 V, IE = 0
DC current gain hFE
Ic = 5 rnA, VCE = 6V 40 90 250 -
I c = 20 rnA, VCE = 6V 40 100 - -

Ic = 5 rnA, VCE = 6 V, f= 200 MHz - 3,5 - GHz
Ic = 20 rnA, VCE = 6 V, f= 200 MHz - 4,5 - GHz
Collector-base capacitance Ceb - 0,58 - pF
VCE = 6V, VSE = OV, f= 1 MHz
Collector-emitter capacitance C ee - 0,27 - pF
VCE = 10 V, VSE = 0 V, f = 1 MHz
Noise figure F - 2,1 - dB
Ic = 2 rnA, VCE = 6 V, f= 800 MHz
Siemens 357
BF775
Total power dissipation Ptot = f(TAl Transition frequency fT = f (l cl

VCE = 6 V. f = 200 MHz
mW GHz
400 5
/
r
I
1/
1"\ 3
200
'\
'\
I
I\. 2
I\.
I
100
I
1'\
o I\- o
o 50 100 150 0(
o 10 20 mA
Collector-base capacitance Ccb = f(VcBl

f= 1 MHz
pF
1,0
Ceb
f 0,6
\
\
\
0,4
' .........
-- - - -
0.2
o
o 20V
-i'cB
358 Siemens
• Suitable for broadband RF amplifiers

up to 500 MHz in the high tuning range
• Particularly suitable for SAW filter driver application
in TV tuners

SF 799 LK Q62702-F788 Q62702-F935 SOT 23
Maximum ratings
Collector-emitter voltage VCER 30 V
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 359
BF799

Ic = 1 rnA, Is = 0
Ic = 10 I1A, IE = 0
Emitter-base breakdown voltage V(BR) ESO 3 - - V
IE = 10 I1A
VCB = 20V
DC current gain hFE
Ic = 5 rnA, VCE = 10V 35 95 - -
Ic = 20 rnA, VCE = 10V 40 100 250 -
Ic=20mA,/B=2mA
Base-emitter saturation voltage VBEsat - - 0,95 V
I c = 20 rnA, I B = 2 rnA

Ic = 5 rnA, VCE = 10 V, f= 100 MHz - 800 - MHz
Ic=20mA, VCE= 8 V, f= 100 MHz - 1100 - MHz
Vcs = 10 V, f= 1 MHz, IE = 0
Collector-base capacitance Ccb - 0,7 - pF
Vcs = 10 V, VBE = 0, f= 1 MHz
Collector-emitter capacitance C ce - 0,28 - pF
VCE= 10V, VSE=O, f= 1 MHz
Noise figure F - 3 - dB
Ic = 5 rnA, VCE = 10 V, f= 100 MHz
Rs =50n
Output conductance g22e - 60 - I1S
Ic = 20 rnA, VCE = 10 V, f= 35 MHz
360 Siemens
BF799
Total power dissipation Ptot = f (TA) Transition frequency fr = f (/ cl

f= 100 MHz
mW MHz
400 1200
'i'ot
I 300
ff,
1000 ~
/
I-"""
\.h=2\ 1\
.........
5V
800
I \
\
1'\ I
200
1'\
, 600
I
1\
400
100
200
\
a 1\
a 150
a
50 100 O( o 10 20 40 50 rnA
-1,;. -Ie
Collector-base capacitance C cb = f ( Vce) Forward transfer admittance !Y21e! = f(/ cl

f= 1 MHz f=35 MHz
pF mS
1,5 500
1\
1\
\
\
1,0 \
\ 300
",-
'" .......
r-.....
--r- 200 /
V =5V
/ 1h
0,5 /
100
/
II
a o
a 10 20 V o 10 20 30 40 50 rnA
-Ie
Siemens 361
Silicon N Channel MOSFET Tetrode BF989
• For amplifier and mixer stages in UHF
~D
and VHF TV tuners
• Low input and output capacitance
G2
G1 ~s
SF 989 MA Q62702-F874 Q62702-F969 SOT 143
Maximum ratings
Drain-source voltage Vos 20 V
Drain current 10 30 mA
Gate 1/Gate 2 source
peak current ± IG1/2sM 10 mA
TA = 60°C
Channel temperature Tch 150 °C
Thermal resistance RthJA :;;450 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
362 Siemens
BF989

Drain-source breakdown voltage V(BR) os 20 - - V
10 = 10 fJ.A, - VG1S = - VG2S = 4 V
Gate 1 source breakdown voltage ± V(BR)G1SS 8,5 - 17 V
± IG1s = 10 rnA, VG2S = Vos = 0
± IG2s = 10 rnA, VG1S = Vos = 0
Gate 1 source leakage current ± IG1sS - - 50 nA
± VG1S = 5 V, VG2S = Vos = 0
± VG2S = 5 V, VG1S = Vos =0
Drain current loss 2 - 20 rnA
Vos = 15 V, VG1S = 0, VG2S = 4 V
Gate 1 source pinch-off voltage - VG1S(P) - - 2,7 V
Vos = 15 V, VG2S = 4 V, 10 = 20 fJ.A
Vos = 15 V, VG1S = 0,10 = 20 fJ.A

Forward transconductance gfs 9,5 12 - mS
Vos = 15V, 10 = 7mA, VG2S = 4V, f= 1 kHz
Gate 1 input capacitance C g 1ss - 1,8 - pF
Vos = 15V, 10 = 7 rnA, VG2S = 4V, f= 1 MHz
Gate 2 input capacitance C g 2ss - 1 - pF
Vos = 15V, 10 = 7 rnA, VG2S = 4V, f= 1 MHz
Reverse transfer capacitance ') Cdg1 - 25 - fF
Vos = 15 V, 10 = 7 rnA, VG2S = 4 V, f= 1 MHz
Output capacitance Cdss - 0,8 - pF
Vos = 15 V, Jo = 7 rnA, VG2S = 4 V, f= 1 MHz
Power gain (test circuits 1, 2) Gp
Vos = 15 V, 10 = 7 rnA,
f= 200 MHz, GG = 2 mS, GL = 0,5 mS - 23 - dB
f= 800 MHz, GG = 3,3 mS, GL = 1 mS - 16,5 - dB
Noise figure (test circuits 1, 2) F
Vos = 15 V, 10 = 7 rnA
f= 200 MHz, GG = 2 mS, GL = 0,5 mS - 1,6 - dB
f= 800 MHz, GG = 3,3 mS, GL = 1 mS - 2,8 - dB
Control range (test circuit 2) ~Gp 40 - - dB
Vos = 15 V, VG2S = 4··· -2V, f= 800 MHz
Mixer gain (test circuit 3) Gpse - 16 - dB
Vos = 15 V, VG2S = 4 V, f= 800 MHz,
flF = 36 MHz, 2 ~flF = 5 MHz, VOse = 800 mV
') G2 and S on screen potential.
Siemens 363
BF989
Total power dissipation Output characteristics

Ptot = f(TA) 10 = f(Vos)
VG2s=4V
mW mA
300 ~~~~~~~I~Tr~
r,B'\
~ot
i 200
1\
1\ 1
1\ 10 HII-++±.Iool-l-H-IH-+-+6.2~
100
o
I' 5~~~~~HH~*=~.?~
1\
~+b~4+~~~~g~
\
o \ o ~~8;e;~~ti~V~Gll~s=~-o~.BBv
o 50 100 150 0 C o 5 10 15 20V
-~ -Vos
Gate 1 forward transconductance gls1 = f(VG1S) Gate 1 forward transconductance gls1 = f(VG2S)
Vos = 15V Vos=15V
loss = 7 rnA, f= 1 kHz loss = 7 rnA, f= 1 kHz
mS mS
15 15
~!2! ~~ ~:*
V
~!3' OV
tJI I- I . . J.........
Vjll 1\ 1/
10 10
1)'(1 n J
YIJ 1\ rl VG1s =-O,5V
I HI.
OM ,
~1V
L...- V'
~I-'"
o
-2
-.
IINIII ~
.UI1
-1
rl.v
I/HIV 1\
I......
o
lOY
1\
~c.s~1\
1\
,....
-:-~ 5V
1\
1V
5
o ljV
-1
V, J
III
0
I I VI-'"
II It-
....
2 4 5V
- VG2S
364 Siemens
BF989
Gate 1 input capacitance Gate 2 input capacitance

C g 1SS = f(VG1S) C g2ss = f(VG·2S)
VG2S =4V, Vos = 15V VG1S = 0 V, Vos = 15 V
loss = 7 mA, f= 1 MHz loss = 7 mA, f= 1 MHz
pF pF
2,0 2,0
~
~
C g 1ss ~ Cg2ss
i 1,5
./
V
i 1,5
v r-.
f--- ~
'-.
1,0 1,0 .......
0,5 ~
0,5
o
-1 o 1V -1 o 5V
Output capacitance Drain current 10 = f(VG1S)

Cdss = f(Vos) Vos=15V
VG1S = 0 V, VG2S = 4 V
loss = 7 mA, f= 1 MHz
pF rnA
2,0 30
I V~2S=4V J =3V
I II
I
VII
i
VG2S -4V
V =2V
1,5
t'
20
\ ~
\
1,0 II
~
-- - 10
IJ,
r;, i-'
=1V
W
0,5
=ov
By i-'
o o IoIjrffl
o 10 20 V -1 o 3 V
-VOS
Siemens 365
BF989
Gate 1 input admittance Y11s

Vos = 15 V, VG2S = 4 V
(common-source)
mS
10 1 _I
10PlIO= 15mA
- I-- Z
3, f-800 MHz
8
- r- ~1 I
- I---; 15
f 600MHz
.!1
~5 I
400MHz
4
&
~ 20~M~z
~100MHZ
o I I
o 4 5mS
Gate 1 forward transfer admittance Y21s Output admittance Y 22s

Vos = 15V, VG2S = 4V Vos = 15V, VG2S =4V
(common-source) (common-source)
mS mS
o 5
10~
IllIo=lmA 13
-f=100MHz 7
200MHzp.... J
1 r-i'-_ l?mAI 1
10=1 3 7 Ie !
15mf
1
"UU':MZ "'r--. 15 f=800MHz
-5
6Oo~l 1"0-
""",- 1 15
11.. '" 3
800MHz '\, 15 6~OMHZ
I\.
r\
I\. '" I"'~
2
1 1~
-10 ~ ~ 400MHz
I
I\,
15 1 1~
--tr200MHZ
I I
1 rr
15
10
-15 o
o 10 15 mS o 0,1 0,2 0,3 0,4 0,5 mS
-9215 - 9 225
366 Siemens
BF989
Power gain G p = f(VG2S) Noise figure F = f ( VG2S)

Vos = 15 V, VG1S = 0; VOS = 15 V, VG1S = 0;
loss = 7 rnA, f= 200 MHz loss = 7 rnA, f= 200 MHz
dB (test circuit 1) dB (test circuit 1)
40 10
9
F
-, I 8
7
10
1\ 6
\
o 5
4
~o
3 f- - -
-20 I
2
~
-30
~
-40 o
4 3 2 o -1 -2V 5 4 3 2 0 -1 V
- VG2S - VG2S
Power gain G p = f(VG2S) Noise figure F = f(VG2S)

Vos = 15 V, VG1S = 0; Vos = 15 V; VG1S = 0;
loss = 7 rnA, f= BOO MHz; Rs = 0 loss = 7 rnA; f= 800 MHz; Rs = 0
40 ._- 10
9
F
r
8 ,
7
10 '\.
6
o \ 5
I
1\ 4 II
-'0
\ 3
-20
2
-30 II
1\
I
-40 o
4 o -, -2V 5 4 3 2 o -, V
- VG2S
Siemens 367
BF989
Interference voltage lor 1010 cross modulation Interference voltage lor 1010 cross modulation
Vint(I%) = f(fin,)'); mint = 1000/0; Vint (1%) = f(Ll.G ps)'); fo = 800 MHz;
Vos = 15 V; VG2S = 4 V, fint = 700 MHz; mint = 1000/0;
VG1S = 1 V; Rs = 150 n Vos = 15 V; VG1S = 1 V; Rs = 150 n
mV mV
(test circuit 2) (test circuit 2)
103 103
"'\
r-
- :/ r--. V
f-
1~
700 800 900 MHz -10 -20 -30 dB
- - <1G ps
Mixer gain G pse = fIRs) Mixer gain G pse = f ( Vose)
fo = 800 MHz; fose = 836 MHz fo = 800 MHz; fose = 836 MHz
Vose = 800 mV; Vos = 15 V Vos = 15 V; VG2S = 4 V;
VG2S = 4 V; loss = 7 mA loss = 7 mA; Rs = 150 n
20 ,,-,~,,-,.-,,~.-,,~ 20
Gpsc
r0-
15 K-I-+-t-+-+-+-+-+-+-+-+-+-+--1 15 "
t
II
10 H-+-H++----1-+-+-H++----1-l 10
O'-'--'---L-"---,---'----'--'--L---'--'---'-"---,-J o
o 100 200 300 Q o 0,5 1,0 1,5V
--Rs --Vose.
') Vint(l%) is the rms value of half the EMC (terminal voltage at matching) of a 1000/0 sine modulated TV carrier at an internal
generator resistance of 60 n, causing 10/0 amplitude modulation on the active carrier.
368 Siemens
BF989
Test circuit 1, power gain and noise figure

f = 200 MHz; GG = 2 mS, GL = 0,5 mS
VCi2S
HI
lnF
~"';l----~
~ 15p£[
,nputl~nF
FB5~
27~ I
60\1 270k
lnF
Ii I-J
Test circuit 2, power gain, noise figure and cross modulation

f= 800 MHz, GG = 3,3 mS, GL = 1 mS
vGZS
lnF ~270k lnF
lnF H~I---------~--1lklO~~~t
,:g~'rL~I '.. H 0,
vG1S Vos
Test circuit 3, mixer gain

f= 800/36 MHz
Output
6011
Input ~t--.-_ _
oscillator l '
lnF_ I f=36MHz
836 MHz J..0~pF

Input
60ll ~r
800MH~
VDS
Siemens 369
• High gain, low distortion

• For VHF 1V and FM mixer
and input stages
G2/lAO
G1~S
BF993 ME Q62702-F899 Q62702-F1018 SOT 143
Maximum ratings
peak current ± IG1f2SM 10 mA
TA = 60°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
370 Siemens
BF993
at TA = 25°e, unless otherwise specified

Drain-source breakdown voltage V(BR) DS 20 - - V
ID = 10 !lA, - VGIS = - VG2S = 4 V
Gate 1 source breakdown voltage ± V(BR)GISS a,5 - 17 V
± !GIS = 10 mA, VG2S = VDS = 0
Gate 2 source breakdown voltage ± V(BR)G2SS a,5 - 17 V
± IG2s = 10 mA, VGIS = VDS = 0
Gate 1 source leakage current ± IGISS - - 50 nA
± VGIS = 5 V, VG2S = VDS = 0
± VG2S = 5 V, VGIS = VDS =0
Drain current IDss 6 - 40 mA
VDS = 15 V, VGIS = 0, VG2S = 4 V
Gate 1 source pinch-off voltage - VGIS(p) - - 3,5 V
VDS = 15 V, VG2S = 4 V, ID = 2O!lA
Gate 2 source pinch-off voltage - VG2S (p) - - 3,0 V
VDS = 15 V, VGIS = 0, ID = 20 !lA

Forward transconductance gls 16 25 - mS
VDS = 15 V, ID = 10 mA, VG2S = 4 V,
f= 1 kHz
Gate 1 input capacitance CglSS - 6 - pF
VDS = 15 V, ID = 10 mA, VG2S = 4 V,
f= 1 MHz
Gate 2 input capacitance Cg2ss - 2,5 - pF
VDS = 15 V, ID = 10 mA, VG2S = 4 V,
f= 1 MHz
Reverse transfer capacitance') Cdgl - 50 - fF
VDS = 15 V, ID = 10 mA, VG2S = 4 V,
f= 1 MHz
VDS = 15 V, 10 = 10 mA, VG2S =.4 V,
f= 1 MHz
Power gain (see test circuit) Gp - 25 - dB
VDS = 15 V, ID = 10 mA,
f= 200 MHz, GG = 2 mS, GL = 0,5 mS
2M=12MHz
Noise figure (see test circuit) F - 1,5 - dB
VDS = 15 V, ID = 10 mA
f= 200 MHz, GG = 2 mS, GL =0,5 mS
Siemens 371
BF993
Total power dissipation Ptot = f (TA) Output characteristics J D = f (VDS)

VG2s=4V
mW rnA
300 25
IIG1S= 0.4V
~ot
I 200
~.2V
I I
1\ 15
i\
OV
1\
10
100
-0.2V
5
\
1\ -0.4V
o \ o -0.6V
o 50 100 150 0 ( o 10 15 20V
-TA
Gate 1 forward transconductance Gate 1 forward transconductance

g1s1 = f(VG1S) g1s1 = f(VG2S)
VDS = 15V VDS = 15V
JDSS = 10 mA, f= 1 kHz JDSS = 10 mA, f= 1 kHz
mS rnS
40 40
I I
VG1S=~H-
V
30 30 V --- OV
~G2s=4V- V
'\ 1'\ I V
I 1\
III V
20 1\ 20
II ~ II I
\ \ 1\ II -0.5V
3V
VI\ 1\ /'
10 1\ 10
1\
1\
2~ l1
/'
/
V
i' r-1J0.5V II ,/
o
-1
r:.f/JA o
OV r-
2V
o
-1
~'r'"
0 2 4 5 6V
372 Siemens
BF993
Gate 1 input capacitance Gate 2 Input capacitance

C g 1ss = f(VG1S) C g 2SS = f(VG2S)
VG2s=4V, Vos=15V VG1S = 0 V, Vos = 15 V
pF pF
8 5
- -
1\
-
6
1/
,/
,/
I-
,..-
l' ./
\
\
I'..
4
/
o o
-1 o 1V -1 o 3 4 5V
Output capacitance Cdss = f(Vos) Drain current 10 = f(VG1S)

VG1S = 0 V, VG2S = 4 V Vos = 15V
loss = 10 rnA, f= 1 MHz
pF rnA
10 SO
VG2S =4V II =3V
I
=12~
8 40
iI'
V
6 30
4
\ 20
II.
~
... =1V
f'.. ....... IIV,
2 10
~II
~~
~~
=OV
o o II
o 10 20V -1 o 3 V
Siemens 373
BF993
Gate 1 input admittance Ylls Gate 1 forward transfer admittance Y21S

Vos = 15 V, VG2S = 4 V Vos = 15 V, VG2S = 4 V
mS mS
30 o
~ir=1?°Wiit
15
10 =1mA
~J =1mA~5 710
25
i~mtt.'=800 MHz
10
I
1
111
1
ti
I~
5710
1
Sf7
3 600MHz -10
3~
'115
1,*0 5
20 3
15 3 200MHz
3
7
10 5] II
15
?fit 400MHz
-20 5
5
7:1+
\10
11 7 1\J15
~\O
10 I 7 400MHz
-1~
200 MHz -30
10
5 15 10
15 1 I
{tit 100~IHZ
n~~~z
15
600MHz
o -40 1111111 111111
o 10 15 20 25 30mS -30 -20 -10 0 10 20 30 mS
-g"5
Output admittance Y22s

Vos = 15 V, VG2S = 4 V
(common-source)
mS
20
b ZZ5
I 15
JD=1m~
I I 110-
f=800MHz -
10 r-r- 1 10
5 15600MHz
5
r=ITsttio
5 151 MH~
1 I
t~5_12do~Hi
~5l100MHz
o I
o 0,1 0,2 0,3 mS
-gZ15
374 Siemens
BF993
Power gain G p = f(VG2S) Noise figure F= f(VG2S)

Vos=15V, VG1S=0 Vos = 15 V, VG1S = 0
dB (test circuit) dB (test circuit)
30 10
Gp
t
20
I"
f..- - F
t 8
10
J
I
I 4
-10 I
-20
'-
-
-30 o
-1 4V -1 o 4V
- - VG2S
Test circuit for power gain and noise figure

f = 200 MHz; GG = 2 mS, GL = 0,5 mS
1nF 1nF
l~t~t
1SpF lSpF
1nF 60\1
'"'"[
60\1
270k
I
IDr
I
~
VG1S Vtun Vtun Vos
Siemens 375
Silicon N Channel MOSFET-Tetrode BF994 S
• For VHF applications, especially for

input and mixer stages with wide tuning
range, e.g. in CATV tuners G2~D
G1 ~s
SF 994S MG Q62702-F963 Q62702-F1020 SOT 143
Maximum ratings
TA = BODC
Storage temperature range T stg -55···+150 DC
Channel temperature Tch 150 DC

junction - ambient
package mounted
on alumina
15 mm x 1B.7 mm x 0.7 mm
376 Siemens
BF 994 S

10 = 10 1-lA. - VG1S = - VG2S = 4 V
± IG1s = 10 rnA, VG2S = Vos = 0
± IG2s = 10 rnA, VG1S = Vos = 0
± VG1S = 5 V, VG2S = Vos = 0
± VG2S = 5 V, VG1S = Vos =0
Vos= 15V, VG1S=0, VG2s=4V
Vos = 15 V, VG2S = 4 V, 10 = 20 I-lA
Vos = 15 V, VG1S = 0, 10 = 20 I-lA

Forward transconductance gfs 15 18 - rnS
Vos = 15 V, 10 = 10 rnA, VG2S = 4 V,
f= 1 kHz
Vos = 15 V, 10 = 10 rnA. VG2S = 4 V,
f= 1 MHz
Vos = 15 V, 10 = 10 rnA, VG2S = 4 V,
f= 1 MHz
Reverse transfer capacitance Cdg1 - 25 - fF
Vos = 15 V, 10 = 10 rnA, VG2S = 4 V,
f= 1 MHz
Output capacitance Cdss - 1 - pF
Vos = 15 V, 10 = 10 rnA, VG2S = 4 V,
f= 1 MHz
Vos = 15 V, 10 = 10 rnA,
f= 200 MHz, GG = 2 rnS, GL = 0,5 rnS
Noise figure (see test circuit) F - 1 - dB
Vos = 15 V, 10 = 10 rnA,
f= 200 MHz, GG = 2 rnS, GL =0,5 rnS
Control range (see test circuit) ~Gp 50 - - dB
Vos= 15V, VG2s=4··· -2V,
f= 200 MHz
Siemens 377
SF 994 S
Total power dissipation Ptot = t (TA) Output characteristics

10 = t(Vos)
VG2s=4V
mW mA
300 25
10
VGtS=0,6V
~ot
i t 20
0,4V
200
\ 15 O,2V
\
\. O~
10
-O;lV
100
\ -0,4~
5
i\ -O,6V
\ -O,BV
o 1\ o
o 50 100 150°C o 5 10 15 20V
-1i. -VOS

gfst = t(VGts) gfst = t(VG2S)
Vos=15V Vos = 15V
loss = 10 rnA, t= 1 kHz loss = 10 rnA, t= 1 kHz
mS mS
20 20
III I
Yf,zs=4V
VGts=OV-
15 15
VT/
i\ If'
/ v.:
\ 1\ I o,~V
10 1\ 10 /
./
1\ / V '-0,5V
"1
1,V
5
11111
1\
12V 5
/
/",
o
-2
I,
-1 o
~~
OV
2V -2
I
olL ~ ~
1/
-1
/
o
V
3 4V
378 Siemens
BF 994 S
Gate 1 Input capacitance C g 1SS = f(VG1S) Gate 2 Input capacitance C g 2ss = f( VG2S)
VG2S = 4 V, Vos = 15 V VG1S =0, Vos = 15V
loss = 10 mA. f= 1 MHz loss = 10 mA, f= 1 MHz
pF pF
[g1ss
2,5
.,-
V -- y
2,0
t 2,0
/'
1,5
..-
1\
1,5
1,0
1,0
0,5
0,5
o-1 o
o 1V -1 o 2 4 5V
Output capacitance Cdss = f (Vos) Drain current lo = f(VG1S)

VG1S=OV, VG2s=4V Vos = 15V
loss = 10 mA, f= 1 MHz
pF mA
5rr"""~"",,,,-'~ 30
VG1s =4V =3V =2V
II I-'
rl
II
V
20
V =1V
i;'
W
10 u
rl
=OV
o WI!
'"
-1 o 3 V
Siemens 379
BF 994 S
Gate 1 Input admittance Y115 Gate 1 forward transfer admittance Y 215

Vos = 15 V, VG2S = 4 V Vos = 15 V, VG2S = 4 V
mS mS
14 o
f=100 MHz 1
1~t-
b11 •
-
-
-'71~p1~ -2 1
15 I
I
-0.
12 b 21s
1 ~
J,
-4 2fM~Z-
o=1mA f=800MHz- 3
-f--k. ........ ~
10
-
15 f -6 10 =1mA
........ I~~-
r-~;1 N 400 MHz
8 - f--3 5
1~ 600MHz
-8
-10
" i'\.
3
'5
........
'\ I~I--
15-
60~HZ
6 I"-?
4
Il
15 400MHz
-12
-14
~
~
15 -16
15 r- -
1 200 MHz 8~OMIHZ -

2
-18
15
1 100MHz
-20
2 mS o 10 20mS
-9"s
Output admittance Y 225

Vos = 15 V, VG2S = 4 V
(common-source)
mS
5
10=lmA
3 5 7110 115
f=tOOMHZ
llo. ,..:015 600MHzI

3
1bo1~ 400 MHz

2
cJ? 200 MHz

J51100~HZI
o
o 0,1 O,2mS
380 Siemens
BF 994 S
Power gain G p = f (VG2S) Noise figure F = f (VG2S)

Vos=15V.VG1S=OV Vos = 15 V. VG1S = 0 V
loss = 10 rnA. f= 200 MHz loss = 10 rnA. f= 200 MHz

30 10
F
Up
~- 9
I
20
I r 6
10 7
6
o
5
-10
4
-20 3
2 \
-30 \
I"'---.
I
-40
-1 2 3 4 2 3 4V

f=200MHz; GG=2mS. GL=0.5mS
lnF
15pF
kloutput
l
1 nF 60Q
Input H
60Q
I
270k lOr
I
Vos
Siemens 381
• For FM and VHF TV input and mixer stages
G2 i/)wo
G1~S
BF995 MB Q62702-F872 Q62702-F936 SOT 143
Maximum ratings
TA = 60°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
382 Siemens
BF995

10 = 10 !lA, - VG1S = - VG2S = 4 V
± IG1s = 10 mA, VG2S = Vos = 0
± iG2S = 10 mA, VG1S = Vos = 0
± VG1S = 5 V, VG2S = Vos = 0
± VG2S = 5 V, VG1S = Vos =0
Drain current loss 4 - 20 mA
Vos = 15 V, VG1S = 0, VG2S = 4V
Gate 1 source pinch-off voltage - VG1S(p) - - 3,5 V
Vos = 15 V, VG2S = 4 V, 10 = 20 flA
Vos = 15 V, VG1S = 0,10 = 20 flA
Siemens 383
BF995

Forward transconductance gfs 12 17 - mS
Vos = 15 V, 10 = 10 mA, VG2S = 4 V,
f= 1 kHz
Gate 1 input capacitance C g 1ss - 3,6 - pF
Vos = 15 V, 10 = 10 mA, VG2S = 4 V,
f= 1 MHz
Gate 2 input capacitance C g2ss - 1,6 - pF
Vos = 15 V, 10 = 10 mA, VG2S = 4 V,
f= 1 MHz
Reverse transfer capacitance') Cdg1 - 25 - fF
Vos = 15 V, 10 = 10 mA, VG2S = 4 V,
f= 1 MHz
Vos = 15 V, 10 = 10 mA, VG2S = 4 V,
f= 1 MHz
Power gain (test circuit 1) Gp - 23 - dB
Vos = 15V, 10 = 10 mA,
f= 200 MHz, GG = 2 mS, GL = 0,5 mS
2M= 12MHz
Noise figure (test circuit 1) F - 1,8 - dB
Vos = 15 V, 10 = 10 mA
f= 200 MHz, GG = 2 mS, GL =0,5 mS
Control range (test circuit 1) ~Gp - 50 - dB
Vos = 15V, VG2S =4 ... -2V,
f= 200 MHz
Mixer gain (additive test circuit 2) G pse - 16 - dB
Vos = 15V, VG2S = 6V, Rs = 220n
f= 200 MHz, flF = 36 MHz
2 ~flF = 5 MHz, VOse = 0,5 V
Mixer gain (multiplicative test circuit 3) G pse - 18 - dB
Vos = 15V, VG1S = 1,7V, VG2S= 2,5V
Rs = 220 n, f= 200 MHz, flF = 36 MHz
2 ~flF = 5 MHz, VOse = 2 V
384 Siemens
BF995
Total power dissipation Ptot = f (TA) Output characteristics I D = f (VDS)

VG2S = 4 V
mW mA
300 20
VG1S = 0,6 V
~.t
-I- -
_. tt
°L4.'1. . -- --
I 200 0,2
\ --
\. /
10
·1
100
II
~
/
7'
.. --
- - ..
'·mrv
tv
\ v -06V!
1\
- -O~BV±
o 1\ o
o 50 100 150 0 ( o 5 10 15 20 V
-TA -Vos
Gate 1 forward transconductance g1s1 = f(VG1S) Gate 1 forward transconductance g1s1 = f (VG2S)
VDs=15V VDS = 15V
IDss = 10 mA, f= 1 kHz loss = 10 mA. f= 1 kHz
mS mS
20 - -
20
c-+- 1 1
" .1.
i-- -
VG 2~::';_Y f--- f--- .. 1--- - -+ . .I .......
9 15 1
1/ 1
I-- I-- '-1--- VG1S=O,5V~ ~
I-- 1---1-- r-~1 i-""'"OV
./1/ -~ 15
1/ 3V ~
I--
l- //
I-- I ...... i-
(I I I ........ : -O,5'v r----
10 'I 10 1/ L/
\ vTI
1\ VI
2 V\,. II
1\ \ I II I
I
5 5 .J-- I-- r----
1\ J
,
A '\
1\
-0,5V
-1V I -
I'- O,5V N
~lf-
~1V
J/
I
I I II
1 --
I
o o~V 1
-2 -1 1V -1 o 5V
Siemens 385
BF995
Gate 1 Input capacitance C 9 1 ss = f (VG 1s) Gate 2 input capacitance C g 2ss = f(VG2S)
VG2S =4V, Vos = 15V VG1S = OV, Vos = 15V
Joss = 10 rnA, f= 1 MHz Joss = 10 rnA, f= 1 MHz
PF pF
5 5
g1ss [g2ss
.......
l- ~
j...- j...- ~
t 4
I-
VV
p- I""
" ~
~ +-.
o o
-1 o 1V -1 3 4 5V
Output capacitance Cdss = f(Vos) Drain current Jo = f( VG1S)

VG1S = 0 V, VG2S = 4 V Vos = 15V
Joss = 10 rnA, f= 1 MHz
pF mA
5 30
VG2 s=4V I I/dv =2V
10
4
IN
t IPff
20
3 II
,
\
I\..
\I
=1 V
2
1'--- t- 1/
t-i-. 10
=ov
I T
o o
r; T
o 10 20V -1 o 2 3 V
- - Vos -\(;,s
386 Siemens
BF995
Gate 1 input admittance Ylls Gate 1 forward transfer admittance Y21 s

Vas = 15V, VG2s=4V Vas = 15 V, VG2S = 4 V
mS mS
20 o rrr-rTTTrTT1"'IITlnII"'
T lin-I'
1n-ITTTl
I
Io~
10
5 1-H-+++l-HIo-1mA IIII I11
31 5 171015
} Zi=60bM~z-
1
1 1 f.l00MHz
t 15
15
jY
I"
1 -5 1 IIII
H-fI-++mrH-H+-f'l'-I.a:~:fl1
j11 15
1-+I1-+M--H-l'-++++++-1?n0 MH z
35 600 MHz
- -1/ I
10 - 15/1 -10 1-H-H-H-t-HHI---P\;r,(tH-t-t-t-H-t-t-H
;t 400 MH 400MHz 10
3 5+r1-ti;+-ril~i'-H'''i.15
-1
{op z
5 ~ -15 0t-HHr~o++-HH++t-H-++-H
1200 MHz
1 I 1-H~~~~~1~5t-H++t-H++~
600 MHz
1~ III
t-1~0 M,Hz
IIIII
o I -2 0 L.L.L..L.L.O..LI~
11u.1J...L<
I--LWLLLLLL.L.L.L-'-J
o 5 10 mS -5 0 10 15 20 mS
-911. -911'
Output admittance Y 22s

Vas = 15 V, VG2S = 4 V
(common-source)
mS
+
10
f--
b 225 I
10= lmA 5 10 15mA
6 -
t
f- '---
f=R(IO ~IH7
- .-~
-
1 51 15
6
00 MHz
1 5 lp 15
'- - -c- .. ---
4
4 OMHz
3 1-
110 5
2
120 1M iz
115
100MHz
o
o 0,1 0,2 0,3 0,4 0,5 0,6 mS
-9115
Siemens 387
BF995
Power gain G p = f(VG2S) Noise figure F= f(VG2S)

Vos= 15 V, VG1S = 0 V Vos = 15 V, VG1S = 0 V

40 10
~I-- r-- - - r-
1 -- - .. ~
~-
-
Gps 30 F \ -- - -
---
..
\ _.
t 20
/
r-
i \
--
-
---
f-- - --.-
.--
--
-
10 II ---
-
-- - - -
1-- . . - - -
6
1\ -
0 II 5 1\ .. _. .
--
\ - ---
I 4 \ - - r- _ ..
-- -
-10
I r - -
3 - - -
-20 \
I
r-
-30 ,I .- - -
-40 o ----
-2 -1 o 4V -1 o SV
388 Siemens
BF995
Mixer gain (additive) Mixer gain (additive)

G psc = f( Vos c); Vo = 15 V; VG1S = 0; G psc = f(VG2S); Vo = 15 V; VG1S = 0;
VG2S = 6 V; Rs = 2200; loss = 10 mA; Rs = 220 0; Vosc = 0,5 V;
f= 200 MHz; flF = 36 MHz; loss = 10 mA; f= 200 MHz;
2 LlflF = 5 MHz flF = 36 MHz;
dB (test circuit 2) dB 2 LlflF = 5 MHz (test circuit 2)
20 20
..... I--
--
~
/ Gpsc
/ /'
i 10
II
1/
_. -- --- t-
t-
r 10 /
- . I
11
o o II
t- t-
t- I--
-10 ~
1--+-- t- -10
.. - f- f-
-20 -20
o 0,5 1,0 1,5 V -2 -1 4 5 6V
~VOS(.
- VG2S
Mixer gain (additive) Mixer gain (multiplicative)
G psc = f(Rs); Vo = 15 V; VG1S = 0; G psc = f(VG2S); Vo = 15 V; VG1S = 1,7 V;
VG2S = 6 V; Vosc = 0,5 V; f= 200 MHz; Rs = 2000; loss = 10 mA;
flF = 36 MHz; 2 LlflF = 5 MHz f= 200 MHz; flF = 36 MHz;
2 LlflF = 5 MHz
20 25
I II II
II I II
Gps< 20
I--IOSS - SmA Vose;' 2,5V ~
~ 1-""/ I:::::
i
J.
~
V I I
15 1umflt' 2,OV 1/ _. /
/
~mA
10
/ If 1,5 V
--
1/ tov
10
I)
/
o II
II
V /
-5
lJ
5
-10
j/
-15
-20
-3 -2 -1 0 2 3 4 5 6V
-Rs _VG2S
Siemens 389
BF995
Interference voltage for 1% cross modulation Interference voltage for 1% cross modulation
Vint (t%) = f(fint)'); mint = 1000/0; Vint (1%) = f(LlG p)'); fe = 200 MHz;
fe = 200 MHZ; Vos = 15 V; VG2S = 4 V, fint = 221 MHz; mint = '1000/0;
VG1S = 0; loss = 10 mA Vos = 15 V; VG1S = 0; loss = 10 mA
(test circuit 1) mV (test circuit 1)

,-
f-
10
3
rn=liOOaWt-tlE~
17
1'\1\. 1/ 7
\ 1/
\ II
.. f-
f- f-
1\11 f- f-
10' UJ...Ll...Ll...LL.LL.LLLU...Ll...Ll..LL.LL..LJ
180 200 220 240 MHz o 10 15 20 25 dB
------.. L1 Gp

f= 200 MHz; GG = 2 mS, GL = 0,5 mS
lnF
ISpF
kloutput60\1
BB5.QL I
270 k 270k lOr
1nFI
270!" I
Vos
') Vint (1%) is the rms value of half the EMF (terminal voltage at matching) of a 1000/0 sine modulated TV car-
rier at an internal generator resistance of 60 n, causing 1% amplitude modulation on the active carrier.
390 Siemens
BF995
Test circuit 2, mixer gain (additive)

f= 200 MHz; fosc = 236 MHz; 2 .MIF = 5 MHz
VG2S
rb H~ 'Q 'oF ~'00.'

3,3pF
~~cQinput I l .. 6pF'\,
Input
60Q Ir---1 1nF
10nF I
I
'nlFoutput
~
60Q
I
IDr
I
Vos
Test circuit 3, mixer gain (multiplicative)

f= 200 MHz; fosc = 236 MHz; 2 LlflF = 5 MHz
VG2 s
68Q 100k
Osc.input
60Q
I
1... 6pF\
Input
60Q
I 10nF I
\nlF
\
60Qoutput
100k
12 k 100k
Vos
Siemens 391
Silicon N Channel MOSFET Tetrode BF 996 S
• For input stages in UHF TV tuners

•
•
High transconductance
Low noise figure G2 /7}yo
Gl9;s
BF 996 S MH Q62702-F964 Q62702-F1021 SOT 143
Maximum ratings
peak current ± IG1/2SM 10 mA
TA = 60 DC

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
392 Siemens
BF 996 S

10 = 10 !lA, - VG1S = - VG2S = 4 V
Gate 1 source breakdown voltage ± V(BRI G1SS 8,5 - 17 V
± IG1s = 10 mA, VG2S = Vos = 0
Gate 2 source breakdown voltage ± V(BRIG2SS 8,5 - 17 V
± IG2S = 10 mA, VG1S = Vos = 0
± VG1S = 5 V, VG2S = Vos = 0
Gate 2 source leakage current ± IG2SS - - 50 nA
± VG2S = 5 V, VG1S = Vos =0
Vos = 15 V, VG1S = 0, VG2S = 4 V
Vos = 15 V, VG2S = 4 V, 10 = 2O!lA
Vos = 15 V, VG1S = 0,10 = 2O!lA

Vos = 15V, 10= 10mA, VG2S =4V, f= 1 kHz
Gate 1 input capacitance Cg1SS - 2,3 - pF
Vos = 15V, 10 = 10mA, VG2S =4 V, f= 1 MHz
Vos = 15V, 10 = 10mA, VG2S = 4V, f= 1 MHz
Vos = 15 V, 10 = 10 mA, VG2S = 4 V, f= 1 MHz
Vos = 15 V, 10 = 10 mA, VG2S = 4 V, f= 1 MHz
Power gain (test circuits 1, 2) Gp
Vos = 15 V, 10 = 10 mA,
f= 200 MHz, GG = 2 mS, GL = 0,5 mS - 25 - dB
f= 800 MHz, GG = 3,3 mS, GL = 1 mS - 18 - dB
Noise figure (test circuits 1, 2) F
Vos = 15 V, 10 = 10 mA
f= 200 MHz, GG = 2 mS, GL = 0,5 mS - 1 - dB
f= 800 MHz, GG = 3,3 mS, GL = 1 mS - 1,8 - dB
Control range (test circuit 1) ~Gp 40 - - dB
Vos = 15 V, VG2S = 4··· -2 V, f= 800 MHz
Siemens 393
BF996 S

Ptot = t(TA) 10 = t(Vos)
VG2s=4V
mW mA
300 25
10
VG1s =0.6V
~ot
r 200 t 20
0.4V
r\ 15 0.2V
1\
r-.. O~
10
-OJ.V
100
\ -0,4~
5
\
-0.6V
\ -O.BV
o 1\ o
o 50 100 150 0 ( o 5 10 15 20V
-7; -Vos

gfs1 = t(VG1S) gfs1 = t(VG2S)
Vos = 15V Vos = 15V
loss = 10 mA, t= 1 kHz loss = 10 mA, t= 1 kHz
mS mS
20 20
I II
Vuzs=4V
gl.1 gf.1
VG1S =OV-
f 15
r 15
Vf/
II 1\ If'
/ v.:
\ 10.5V
10 \ 3V
10 / II I
1\ I Y
III
III 1\
II ..., V_ ........-0.5V
fII0r j.V /
5 .11/1 1\ \ 2V /7 /
I /
o
-2
Isv
-1 o
1V
~~
OV
I
2V
V
o .L .L. V
-2
I
-1
/
I
/
o
1/
4V
394 Siemens
BF 996 S
Gate 1 Input capacitance Gate 2 Input capacitance

C g 1ss = f(VG1S) C g 2ss = f(VG2S)
VG2S = 4 V, Vos = 15 V VG1S = 0, Vos = 15 V
pF pF
'r
2,5
2,0
/'
....
v - 2,0
r
1\
1,5
~
1,0
1,0
0,5
0,5
o-1 o lV
o
-1 o 3 4 5V

Cdss = f (Vos) Vos= 15V
VG1S=0, VG2s=4V
loss = 10 rnA, f= 1 MHz
pF mA
5rrTT"".-rrTT""'-~ 30
VG2s =4V =3V =2V
i;'
10
V
II,
f If
20
,N =lV
lJ.rl i-'
rJ,
IJI}
10 V
=OV
i-'
OLLLLLLLLLLLLLLLLLL~
o .. ~
o 10 15 20V -1 o '3 V
Siemens 395
BF 996 S
Power gain G p = f(VG2S) Noise figure F = f (VG2S)

Vos = 15 V, VG1S = 0 VOS = 15 V, VG1S = 0

30 - -r~
-- 10
Ip
I
20
10
/
V"'"
! 8
6
o
-10
4
-20 II 3
\
--
\.
-30
I
-40
-1 o 4 2 3 4V
- VG2S
Power gain G p = f(VG2S) Noise figure F = f(VG2S)

Vos = 15 V, VG1S = 0 Vos = 15 V, VG1S = 0
}p
20
/
-- F
I
10 --. -- ~r--
I 10
/
I
o
-10 I '\
\
/ 4 \
-20 II \i
-30
I
/
.......
-
-40 o
-1 4V o 3 4V
396 Siemens
BF 996 S
Gate 1 Input admittance y 11 s Gate 1 forward transfer admittance Y21s

VDs=15V, VG2s=4V Vos=15V, VG2s=4V
mS mS
14 o
f~100' MHz 1 1~t---
b 11s
-'71],1'1 -2 1 -'"00 15
I 12
10
~0=1mA ~
f=800MHz-
b21s
I
-4
-f-,1
-6 10 =1m~o::.
),
r-. 3
....... ~
200MHz _
I I
7~:_
O~? i'..
-
r-;}(
5 -8 '\. N 400MHz
8 - f-3 '\. "'-5
1J'"600MHz 3 f"..: ~-f-
-10
.""- 151-
I'\.?
60~Hz-
~:5
-12
7
15 400MHz tl.,
4 -14 {l
15- f-
15 -16
2
1 200 MHz 8foMIHZ r-
-18
15
1 100MHz
o -20
o 2 mS o 10 20mS
--------- g, 1s ~g2's

VDS = 15 V, VG2S = 4 V
(common-source)
mS
5
10=1mA
3 5 7110 115
f=1800 MHz
11.0- P]600MH~
3
,1,.,~ 400MHz
o.!?200MHz
J51100~HZI
o
o 0,1 O,2mS
Siemens 397
BF 996S

f= 200 MHz, GG = 2 mS, GL = 0,5 mS
1nF 1nF
l~'P"'
1nF 60Q
,"p~r
60Q I
270k lOr
I
H
vG1S v'un VI un Vos

f= 800 MHz, GG = 3,3 mS, GL = 1,0 mS
1nF
';lo' rh----J--~
1nF
Dr
1 0utput
60Q
Vos
398 Siemens
• For VHF applications especially in TV tuners
~D
with extended VHF band
• Integrated suppression network against
G2
spurious VHF oscillations
G1 g;s
SF 997 MK QS2702-F993 QS2702-F1055 SOT 143
Maximum ratings
TA = SO°C

junction - ambient
package mounted
on alumina
15 mm x 1S.7 mm x 0.7 mm
Siemens 399
BF997

Drain-source breakdown voltage V(BR)os 20 - - V
10 = 10 !-lA, - VG1S = - VG2S = 4 V
Gate 1 source breakdown voltage ± V(BR) G1SS 8,5 - 17 V
± IG1s = 10 mA, VG2S = Vos = 0
± IG2s = 10 mA, VG1S = Vos = 0
± VG1S = 5 V, VG2S = Vos = 0
+ VG2S = 5 V, VG1S = Vos =0
Vos = 15 V, VG1S = 0, VG2S = 4 V
Vos = 15 V, VG2S = 4 V, 10 = 20!-lA
Vos = 15 V, VG1S = 0, 10 = 2O!-lA

Forward conductance gls 15 18 - mS
Vos = 15 V, 10 = 10 mA, VG2S = 4 V,
f= 1 kHz
Gate 1 input capacitance Cg1SS - 2,5 - pF
Vos = 15 V, 10 = 10 mA, VG2S = 4 V,
f= 1 MHz
Vos = 15 V, 10 = 10 mA, VG2S = 4 V,
f= 1 MHz
Vos = 15 V, 10 = 10 mA, VG2S = 4 V,
f= 1 MHz
Output capacitance Cdss - 1 - pF
Vos = 15 V, 10 = 10 mA, VG2S = 4 V,
f= 1 MHz
Vos = 15 V, 10 = 10 mA,
f= 200 MHz, GG = 2 mS, GL = 0,5 mS
Noise figure (see test circuit) F - 1 - dB
Vos = 15 V, 10 = 10 mA,
f= 200 MHz, GG = 2 mS, GL =0,5 mS
Control range (see test circuit) l>.G p 50 - - dB
Vos = 15 V, VG2S = 4··· -2V,
f= 200 MHz
400 Siemens
BF997

Ptot = t(TA) 10 = t(Vos)
VG2s=4V
mW mA
300 25
10
VG1S=0,6V
~.t
r t 20
0,4V
200
1\ 15 O,2Y
1\
1\ o~
10
-0,2Y
100
\ -O,4V
1\ 5
-~,~J
1\ - O,BY
o 1\
o 50
-/A
100 150 ·C °° 5 10 15 20V
-Vos

g'st = t(VGts) g'st = t(VG2S)
Vas = 15V Vas = 15V
loss = 10 mA, t= 1 kHz loss = 10 mA, t= 1 kHz
mS mS
25 25
\f;2S= 4V 0,5;£...
OV
20
iA
v
V(;t =-O,SV
lS 15
3V
II
10 10
2V
5 ·i~
I ~ ~~y
o o
-2 -1 o 2V -1 0 4 7V
- VGtS
Siemens 401
BF997
Gate 1 Input capacitance Gate 2 Input capacitance

C g 1ss = f(VG1S) C g 2ss = f (VG2S)
VG2S =4V, Vos = 15V VG1S = 0, Vos = 15 V
Joss = 10 mA, f= 1 MHz Joss = 10 mA, f= 1 MHz
pF pF
'i
2,5
2.0
./ - ~
l
2,0
1,5
..-
1\
1,5 .....
1,0
1,0
0,5
0,5
o-1 o
o 1V -1 o 2 3 4 5V

Cdss = f (Vos) Vos= 15V
VG1S = 0, VG2S = 4 V
Joss = 10 mA, f= 1 MHz
pF rnA
5rrrrTT~,,-.rrTT~"~ 30
VG2s =4V =3V =2V
/0
II
V
1/
t
20 =1V
I'"
10
"~
rJ.
=OV
~
OLLLL~~-LLLLL~~-LLW
o
o 5 10 15 20V -1 o 2 3 V
-\t,s
402 Siemens
BF997
Gate 1 Input admittance Y115 Gate 1 forward transfer admittance Y215

Vos = 15 V, VG2S = 4 V Vos = 15 Y, VG2S = 4 V
VG1S =' 0, Joss = 10 rnA VG1S = 0, Joss = 10 rnA
mS mS
14 o
80 10 MHlz_
f=100 MHz <;
b 1\, 12 /" I
/ L
I 10
P
/
600MHz
200 M~z
I
!---
I
400 M~Z--' I-
-
/ -10
f--- ~400MHZ
I
1/
1
J
4 /
/200I M~zI -15
V
/600MHz - -
~ f -100 MHz V
,/
o -20 -c;:; r- 800 MHz

a 4 mS 10 15 20 mS
-gIl, -gl\,
Output admittance Y 225

Vos = 15Y, VG2S =4 Y
VG1S = 0, JDDS = 10 rnA
(common-source)
mS
6
800M Hz n
V
/1'
4
600MHz
/
V
2 II 400J MHz
I
1200 MHi
c! f =100 MHz
°° 0,2 0,4 0,6
-gll.
0,8 1.0 mS
Siemens 403
BF997
Power gain G p = f (VG2S) Noise figure F = f (VG2S)

VOS = 15 V, VG1S = 0 V Vos= 15V, VG1S =OV

30 10
F
v
I
10-
20
f 8
10 7
6
o
5
-10
4
-20 3
-30 \.
I i'-
-40
-1 o 2 3 4 3 4V

f = 200 MHz; GG = 2 mS, GL = 0,5 mS
1nF 1nF
1~
1 nF 60Q
'""[
60Q
1nFI
27OS:-
BB5~
270k 270k
I
IDr
I
~ H
VG1S Vt"n Vt"n VDS
404 Siemens
Silicon N-Channel MOSFET Tetrode BF998
~D
• Short-channel transistor
with high SIC quality factor
• For low-noise, gain-controlled G2
~s
input stages up to 1 GHz
G1
Type Marking Ordering cod~ Ordering code

for versions in bulk for versions on tape
BF 998 MO Q62702-F37 Q62702-Fl129
Maximum ratings Symbol Ratings Unit
Drain-source voltage VDS 12 V

Drain current ID 30 rnA
Gate l/Gate 2 source peak current ±h1l2SM 10 rnA
T A :5 60 °C
Storage temperature range T stg -55 ... +150 °C

Thermal resistance
Channel - ambient') I RthJA I :5 450 I K/W
I) Package mounted on alumina 16.7 mm x 15 mm x 0.7 mm
Siemens 405
BF998
at TA = 25 °e, unless otherwise specified
Drain-source breakdown voltage V(BR)DS 12 - - V
ID = 10 J.lA, -VG1S = -VG2S = 4 V
Gate l-source breakdown voltage ± V(BR)G1SS 8 - 14 V
±hlS = 10 rnA, VG2S = VDS = 0
Gate 2-source breakdown voltage ± V(BR)G2SS 8 - 14 V
±h2S = 10 rnA, VG1S = VDS = 0
Gate l-source leakage current ±/G1SS - - 50 nA
± VG1S = 5 V, VG2S = VDS = 0
Gate 2~source leakage current ±/G2SS - - 50 nA
±VG2S = 5 V, VG1S = VDS = 0
Drair, current IDSS 2 - 18 rnA
VDS = 8 V, VG1S = 0, VG2S = 4 V
Gate l-source pinch-off voltage -VG1S (P) - - 2.5 V
VDS = 8 V, VG2S = 4 V, ID = 20 J.lA
Gate 2-source pinch-off voltage -VG2S (p) - - 2 V
v:DS = 8 V, V.G1S = 0 , I D = 20 A
Forward transconductance 9fs - 24 - rnS
VDS = 8 V, 10 = 10 rnA, VG2S =4V
f= 1 kHz
Gate 1 input capacitance Cg lss - 2.1 2.5 pF
VDS = 8 V, 10 = 10 rnA, VG2S =4 V
f= 1 MHz
Gate 2 input capacitance Cg 2ss - 1.2 - pF
VDS = 8 V, ID = 10 rnA. VG2S =4 V
f= 1 MHz
Reverse transfer capacitance Cdgl - 25 - fF
VDS = 8 V, ID = 10 rnA, VG2S = 4 V
f= 1 MHz
Output capacitance Cdss - 1.05 - pF
VDs =8V,/ o = lOrnA. VG2s=4V
f= 1 MHz
Power gain Gps
(test circuit 1)
VDS = 8 V, ID = 10 rnA, f= 200 MHz, - 28 - dB
GG = 2 rnS, GL = 0.5 rnS, VG2S = 4 V
(test circuit 2)
VDS = 8 V, ID = 10 rnA, f= 800 MHz, - 20 - dB
GG = 3.3 rnS, GL = 1 rnS, VG2S = 4 V
406 Siemens
BF998
Noise figure F
(test circuit 1)
Vos = 8 V, 10 = 10 mA, f= 200 MHz, - 0.6 - dB
GG = 2 mS, G L = 0.5 mS, VG25 = 4 V
(test circuit 2)
Vos = 8 V, 10 = 10 mA, f= 800 MHz, - 1 - dB
GG = 3.3 mS, G L = 1 mS, VG2S = 4 V
Control range dG ps 40 - - dB
(test circuit 2)
Vos = 8 V, VG2S = 4 ... -2 V
f= 800 MHz
Total power dissipation p.o. = f (TA ) Output characteristics 10 = f (Vos)

VG2 • = 4 V
rnW rnA
300 25
\{;ls =O,5V
O'rVI-
200
~ O,2Vl-
15 1/
\
10 Or
100
":0,2 V
"1\ ~
~.4~
-U.bV
o o
o 50 100 150 0 ( o 5 10 15 V
-7i. -Yes
Siemens 407
BF 998

g", = f (VOls) g", = f (V G2S )
Vos = 8 V, loss = 10 rnA. f= 1 kHz Vos =8 V, loss = 10 rnA, f = 1 kHz
mS mS
30 30
/' .... \(;2S=!+V
171- ~ VG15 =O,2SV
9'sl 9'sl
I 1\ V
/7 \3V V .- e:::
f ffJrr "' 2V 1\
1 V v ....
20 20
rtJl_ \ )
rl l\lV 1\ // -O,25J!.
rI ~ II V V
\" \ \ I V
10
1\ 1\ 10
flA-
\ I'll
It\ 1\ I
ov IJ
"'-
["\[ "- liN
~r-I- t;P
o o
-1 o 2 V -1 o 2 3 4 V
--~IS -\1;25
Gate 1 forward transconductance Gate 1 input capacitance c g' " = f (VOls)

g", = f (10 ) VG2S = 4 V, Vos = 8 V, loss = 10 rnA
Vos =8 V, loss = 10 rnA. f= 1 kHz f = 1 MHz
mS pF
30 2.5
VG25 =4V
9'sl
~y Cgl ss
2
I!:: /
t ~r;.
2V
t """ "-'\ II
20
~ /
11 1,5 II'
10
f'\ 0,5
"
1\1V
OV 0,5
YT
o 1;;[
o o
5 10 15 20 mA -3 -2 -1 o 1V
-10 -\{;'5
408 Siemens
BF 998
Gate 2 input capacitance C U2 .. ; f (VG2S ) Output capacitance Cd" ; f (VDS )

VG1S ; O. V DS ; 8 V VGlS ; O. V G2S ; 4 V
loss; 10 rnA. f ; 1 MHz loss ~ 10 rnA. f ; 1 MHz
pF pF
2 3
r~1.5 ~
oJ ~
, 2
\
,
~
0.5
o o
-2 -1 o 2 3 4 V o 5 10 15 V
-\IG2s -\fos
Drain current 10 ; f (VG1S ) Power gain Gp , = f (VG2S )

VDS ; 8 V V Ds ;8V. VGls= 0
loss = 10 rnA. f = 200 MHz
(5. test circuit 1)
mA dB
30 30
~2s=4V' I
3V,
~ 2 J G~ 20
II
t 1V t 10
20 I
~
o I
II
-10
II
10
-20
r- r- OV
-30
~_
"...
r-
o L-L- -40
o
-1 o 2 V -1 2 3 4 V
-~IS -l.'r;2S
Siemens 409
BF998
Noise figure F = t (VG2S ) Power gain Gp , = t (VG2S )

VDS = 8 V, VOIS = 0, loss = 10 rnA. VDS = 8 V, VOIS = 0, loss = 10 rnA,
t = 200 MHz, (5. test circuit 1) t= 800 MHz, (5. test circuit 2)
dB dB
5 30
t
4
Gps
t
20
10
v -
I
I
I
-10
2
-20
1
o
i'-
- -30
-40
o 2 3 4 V -1 o 2 3 4 V
-\tzs
Noise figure F = t (VG2S ) Gate 1 input admittance Yll,

VDS = 8 V, VOIS = 0, loss = 10 rnA, VDS = 8 V, VG2S = 4 V, VGlS = 0,
dB f = 800 MHz, (s. test circuit 2) loss = 10 rnA, (common-source)
5 14
1200lMHZ
mS r
j100~HZ -1/
l:
F
4 ], t - -
t /
./J,1000MHZ
900lMHzI-- I--
3 ~BOOMHz
2
,
\
8
6
/700MHz
1600MHz
I/sOOMHz
"-
r- r- '--- ~
4
t:~"~
I I
I
300MHz
20~MH,
o o
1 100 HZ
o 2 3 4 V o 2 3 mS 4
-\tzs -g11s
410 Siemens
BF998
Gate 1 forward transfer admittance Y2" Output admittance Y22, '

VDS ~ 8 V, V02S ~ 4 V, Vo,s ~ 0 VDS ~ 8 V, V02S ~ 4 V, Vo,s ~ 0
i DSS ~ 10 mA, (common-source) i DSS ~ 10 rnA, (common-source)
o 8
mS ldo~H~' - 12~OM~~
l-
I
bZT. t-.
·10~M~z \100~Hi~ -
-5 31001M~Z r- I /
1000MHz If'
400MHz I I
I I I ~OO~HV'
-10 500MHz
I I If 800MHz/
600MHz
4 t- - 700MH~ ,
1100 lMHz I
t- 60pM1i'
-15 apOr Hz
900MHz i-500MHz.,r
-JOOOMHzX 1f400MHz
2
10()~Hz ,r 1300MHz
-20
fJ .. L 1200MHz
_ H_120,0~H~.
t- ~lobM~Z
-25 o TT
10 15 20 m5 25 o 0,1 0,2 0,3 0,4 mS 0,5
-gzl. -gzz.

f= 200 MHz, GG = 2 mS, GL = 0.5 mS
lnF
lnF
·~n
6Ml
.~~ I
BB5.Qi.
lnF 270k
fI5
1':'"
nF
iCh
14 I-:l H
, VGIS , Vtun :, Vtun VDS
Siemens 411
BF 998
Test circuit 2. power gain and noise figure

f= 800 MHz. GG = 3.3 mS, GL = 1 mS
412 Siemens
Silicon N-Channel MOSFET Triode BF999
• For high-frequency stages up to 300 MHz,

preferably in FM applications
Type Marking Ordering code Ordering code

for versions in bulk for versions on 8 mm tape
BF 999 LB Q62702-F38 Q62702-F1132
Maximum ratings Symbol Ratings Unit

Drain current 10 30 rnA
Gate-source peak current ±hSM 10 rnA
TA~ 60°C
Thermal resistance
junction - ambient11 RthJA I S; 450 K/W
1) Package mounted on alumina 16.7 mm x 15 mm x 0.7 mm.
Siemens 413
BF 999
Drain-source breakdown voltage V[BR)DS 20 - - V

10 = 10 iJA, - VGS = 4 V
Gate-source breakdown voltage ± V[BR)GSS 6.5 - 17 V
±hs = 10 mA Vos = 0
Gate-source leakage current ±hss - - 50 nA
± VGS = 5 V, VDS = 0
VDS = 10 V. VGS = 0
Gate-source pinch-off voltage -VGS(P) - - 2.5 V
Vos = 10 V. 10 = 20 iJA

VDS = 10 V, I D = 10 mA f = 1 kHz
Gate 1 input capacitance C gss - 2.7 - pF
VDS = 10 V, 10 = 10 mA f = 1 MHz
Reverse transfer capacitance Crss - 25 - fF
Vos = 10 V, I D = 10 mA, f = 1 MHz
Output capacitance C dss - 1 - pF
Vos =10 V, 10 = 10 mA, f= 1 MHz
Power gain Gp - 25 - dB
(test circuit)
Vos = 10 V, 10 = 10 mA, f = 200 MHz,
GG = 2 mS, GL = 0.5 mS
Noise figure (test circuit) F - 1 - dB
Vos = 10 V, 10 = 10 mA, f = 200 MHz,
GG = 2 mS, GL = 0.5 mS
414 Siemens
BF999
Total power dissipation Ptot = f(TA ) Output characteristics 10 = f(Vos)
mW mA
300 25
\'c;=O,BV
10
0,6
1 20
200 O,4V
\. 15
r-.. O,2V
!\
10
ov
100
:6,1\
"1\ 5 -P.4V
-,v
'\
o ~ o
o 50 100 150_0 ( o 5 10 15 20 V
-lifls
Gate transconductance 9,. = f(Vos) Drain current 10 = f(Vos)

Vos = 10 V,Ioss = 10 rnA, f= 1 kHz Vos = 10 V
mS mA
20 30
1/
II 20 II
10 II I
II
10 1/
5
" 1\
II
/
/
o o
-1 o 2 3 V -1 o 2 V
-\6s
Siemens 415
BF 999
Gate input capacitance C,,, = f(VGs) Output capacitance Cd" = f( VDS )

VDS = 10 V, loss = 10 rnA, f= 1 MHz VGS = 0, loss = 10 rnA, f= 1 MHz
pF
3
pF
2,0 ,
\
i-'r'"'" ,
,.,- Cds,
II t 1,5
\
I "-
1'\ ~
1,0
>-
0,5
o o
-2 -1 o 1 V o 5 10 15 V
-\1;s -Vos
Reverse transfer capacitance C", = f(VDS) Gate 1 input admittance Yll,

= 10 rnA, f= 1 MHz, VGS = 0
loss VDS = 10 V, VGS = 0,
loss = 10 rnA. (common-source)
pF mS
0,2 r-T---'-...---r-T---'-'---'----'---'-'-"-'--'--' 14
f=800MHz~
Crss b"s 12 /
/700MHz
t 0,15 f-+-t--Hf-+-t-+-i-+-t-+-If-+-H
t /1
10
/6IOOMHz
/0 I
7 iOOMHZ
0,1
/400MHz
6
---.
/1
300 MHz
4 / l
0,05 f-+--l-t-f\++-I-+-t-+-+-++-H 1200M8z

I
If 109MHz
J-sor Hz
o "-,--'--'-L-L-'--'-'------'--'--'-L.J.....J.-J o
o 5 10 15 V o 4mS
-Vos
416 Siemens
SF 999
Gate 1 forward transfer admittance Y21, Output admittance Y22 ,

VDS = 10 V, VGS = 0, VDS = 10 V, VGS = 0,
loss = 10 rnA, (common-source) loss = 10 rnA, (common-source)
mS mS
o 5
SJMHlzt
f=~OO~Hz ~
100MHzl1
4
706MH~ JI' V
ar::~
I- 600MHz /
-5 210 HY -
I-
.I V
500MH V
1 ~I- - -
~
300MHZ I
1
i--400MHz
I
4010M~/
II
I
j "
30~MHz
-10
SOOMHT.JI
600MHz 17 l/200M~Z
700M~
rr- .J. J 100[MH~
-15
°i i
f=18 M z
o
I 50~HZ
4 6 8 10 12 14 16mS o 0,1 0,2 0,3 0,4 O,SmS
-g115 -gl15
Test circuit: Power gain and noise figure

t= 200 MHz
Input '-1 --1-1SP-F--1 Output

6011 lnF lnF 6011
~~-
I kl1 I
'oF
BBSOS
270
kl1
rl~
Siemens 417
NPN Silicon High-Voltage Transistors BFN 16
BFN 18

and switching power supplies E
• Complementary types: BFN 17, BFN 19 (PNP)

BFN 16 DO Q62702-F694 Q62702-F885 SOT 89
BFN18 DE Q62702-F696 Q62702-F1056 SOT 89
Maximum ratings
Parameter Symbol BFN 16 BFN 18 Unit
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
418 Siemens
BFN 16
BFN 18

Ic = 1 rnA
BFN 16 250 - - V
BFN 18 300 - - V
Ic = 100 IJA
BFN16 250 - - V
BFN 18 300 - - V
IE = 100 I1A
VCB = 200 V BFN 16 - - 100 nA
VCB = 250 V BFN 18 - - 100 nA
VCB = 200 V, TA = 150°C BFN 16 - - 20 IJA
VCB = 250 V, TA = 150°C BFN 18 - - 20 I1A
VEB = 3V
DC current gain hFE
Ic = 1 rnA, VCE = 10V 25 - - -
Ic = 10 rnA, VCE = 10 V1) 40 - - -
Ic = 30 rnA, VCE = 10 V1) BFN 16 40 - - -
BFN 18 30 - - -
Collector-emitter saturation voltage 1) VCEsat
Ic=20mA,IB=2mA
BFN 16 - - 0,4 V
BFN 18 - - 0,5 V
Base-emitter saturation voltage 1) VBEsat - - 0,9 V

Ic = 20 rnA, VCE = 10 V, f= 20 MHz
1) Pulse test: t =:; 300 I1s, D = 20/0.
Siemens 419
BFN 16
BFN 18
Total power dissipation Ptot = f ( TA) Operating range Ie = (VeEO)

TA = 25°C, 0= 0
W mA
1,2 103
5
1"',0 '\ 1\ 10~~

0,8
\
1\ 100~
1\ lmSITI
1111
0,6 10' lOOms
0,4 \ DC
1\
\
0,2
1\ ,
° 50 100 150
°
0(
5 10 '
--7;, -VCEO
Pulse handling capability rth = (t) Collector current Ie = (VSE)

VCE = 10 V
mA
103
5
'ih 5
1 ,
~
,
~.
0.5
I
5
0.2
0.1
5 0.05
0.02 10'
0.01
0.005 5
0=0
1
5
5
10-3
O=f
~ T
1
1,5 V
10-6 10-5 10- 4 10- 3 10- 1 10-' 10° s 0,5
--f
420 Siemens
BFN 16
BFN 18
Transition frequency fT = f (I c) Collector cutoff current J CBO = f ( TA)

VCE = 10 V VCB = 200 V
MHz nA
10 3 10'
5
fr l(BO
max ~/
1
..... V
typo
10'
5
V
/
, /
5 10' 50 100 150 O(
~r"
DC current gain hFE = f(Iel

VCE = 10V
10'
-
-
10° -
10-' 5 10° 5 10' 5 10 2 5 103 mA
-Ie
Siemens 421
PNP Silicon High-Voltage Transistors BFN 17
BFN 19
• Suitable for video output stages in 1V sets

• Complementary types: BFN 16, BFN 18 (NPN)

BFN 17 DG Q62702-F695 Q62702-F884 SOT 89
BFN 19 DH Q62702-F697 Q62702-F1057 SOT 89
Maximum ratings
Parameter Symbol BFN 17 BFN19 Unit
TA = 25°C
Thermal resistance RthJA ~ 125 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
422 Siemens
BFN 17
BFN 19

Ic = 1 mA
BFN 17 250 - - V
BFN 19 300 - - V
Ic = 100 j.LA
BFN 17 250 - - V
BFN 19 300 - - V
lE= 100j.LA
VCB=200V BFN 17 - - 100 nA
VCB = 250 V BFN 19 - - 100 nA
VCB = 200 V, TA = 150°C BFN 17 - - 20 j.LA
VCB = 250 V, TA = 150°C BFN 19 - - 20 j.LA
VEB = 3 V
DC current gain hFE
Ic= 1 mA, VCE = 10 V 25 - - -
Ic = 10 mA, VCE = 10 V') 40 - - -
Ic = 30 mA, VCE = 10 V') BFN17 40 - - -
BFN 19 30 - - -
I C = 20 mA, I B = 2 mA BFN 17 - - 0,4 V
BFN19 - - 0,5 V
Ic = 20 mA, IB = 2 mA

Ic = 20 mA, VCE = 10 V, f= 20 MHz
VCB = 30V, f= 1 MHz
') Pulse test: t:-:; 300 j.Ls, D = 20f0.
Siemens 423
BFN 17
BFN 19
rnA
Total power dissipation Ptot = f( TA) Operating range Ie =f(VCEO)
TA = 25°C, 0 = 0
W
1,2
Ie
1:
3
m••n.
'11~1'\1111\!1
\",1,0
\.
E 10~5
tI
\
.\1\
2
0,8 105
\ II
1\ \1\ 100fl5
~.n.g1rnls~
0,6
\. 1Q1 100ms
\ DC
0,4
\
1\
0,2
r-..
\
°° 50 100
--7,;
150 0 (
------VCEO
Pulse handling capability rth = f (t) Collector current Ie = f(VBE)

K
W mA
10° 103
5
lih 5
iIt
t
5
1
•- I
0.5
0.2
0.1
0.05
0.Q2
0.01
0.005
5
5
D~O
2
10-3
D=~
~II>. T 1()""t I
10-6 10-5 10-' 10-3 10- 2 10- 1 10° 5 o 0,5 1,0 1,5 V
-f -i1lE
424 Siemens
BFN 17
BFN 19
Transition frequency fT = f (I cl Collector cutoff current I CBO = f (TA)

VCE=lOV· VCB = 200V
MHz nA
10 3 104
5
max. /'
/'
k
typ
10'
5
/
2 V
10 ' 1 1/
10° 5 10 ' 5 10 1 5 10 3 mA 50 100 150 O(
--Ie -/A
DC current gain hFE = f (I cl

VCE = lOV
10 3
hf[
r
10 2
10 '
10°
10-1 5 10° 5 10 ' 5 10 1 5 10 3 A
-Ie
Siemens 425
NPN Silicon High-Voltage Transistor BFN20

• Low capacitance
• Complementary type: BFN 21 (PNP)

BFN 20 DC Q62702-F584 Q62702-F1058 SOT 89
Maximum ratings
RBE = 2,7 kQ
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
426 Siemens
BFN20

Cc.Jlector-emitter breakdown voltage V(BR) CEO 300 - - V
Ic = 1 mA
le = 10 IlA
Collector-emitter breakdown voltage V(BR) CER 300 - - V
Ic = 10 IlA, RBE = 2,7 kQ
lE= 1O IlA
Collector cutoff current leBo
VCB = 250 V - - 100' nA
VCB = 2,50 V, TA = 150°C - - 20 IlA
VCE = 300 V, RBE = 2,7 kQ - - 1 IlA
VCE = 300 V, TA = 150°C, RBE = 2,7 kQ - - 50 IlA
Emitter cutoff current lEBO - - 10 IlA
VEB = 5 V
le = 25 mA, V CE = 20 V
Collector-emitter-saturation voltage ') VCEsat - - 0,5 V

I C = 10 mA, I B = 1 mA
Ic = 10 mA, IB = 1 mA

Ic = 10 mA, VCE = 10V, f= 20 MHz
VCB = 30V, f= 1 MHz
') Pulse test: t:::; 300 Ils, D = 2%.
Siemens 427
BFN20
Total power dissipation Ptot = f (TA) Output capaCitance Cob = f(Vce)

f=lMHz
W pF
1,2 4
1"1,0
i\. 3
0,8 r\
r\
\ 1\
0,6 2 \
1\ ~
0,4 1\
,\ ~
\ r-,...
0,2
['.,.
o \ o
o 50 100 150 .( o 10 20 30 V
--T" -\I(E
Pulse handling capability rth = f(t) Transition frequency fT = f (I cl

(standardized) Vce=lOV
K
iii MHz
100 10 3
1 ~
,10':' III0. 5
1
0.2 2
0.1
5 0.05
0.02
0.01
0.005
1'-0=0
5
xr2 /
5
~
2
O=f
T
1<r3
10-6 10-5 10- 4 10-3 10- 1 10- 1 10° S 5 10 1
-t
428 Siemens
BFN 20
Collector current Ie = f(VBE) Collector cutoff current I CBO = f (TA)

VCE = 20V VCB = 250 V
rnA nA
10 1 10 4
Ie
I V
I
max
10'
/
k V
I
typ
10'
5
Hi' ~
5 10°
I 10· 1 /
0,5 1V o 50 100 150°C
-T"
DC current gain h FE = f (l cl
VCE = 20 V
1 0 ' g• • • •
100 L-l-LLWill---'--.LLLWlL---'--.l...LUJ""--'--LLLWlI
10.1 10·' 10° 10' 101mA
-Ie
Siemens 429
PNP Silicon High-Voltage Transistor BFN21

• Low capacitance
• Complementary type: BFN 20 (NPN)

BFN 21 DF Q62702-F5B5 Q62702-F1059 SOT B9
Maximum ratings
RBE =2,71<0
Total power dissipation . Ptot 1 W
TA = 25°C
Thermal resistance RthJA :5125 KIW

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
430 Siemens
BFN 21

Ic = 1 mA
Colle:::tor-base breakdown voltage V(SR) cso 300 - - V
Ie=10~A
Collector-emitter breakdown voltage V(SR) CER 300 - - V
Ic = 10 ~A, RSE = 2,7 kD
IE = 10 ~A
Vcs=250V - - 100 nA
Vcs = 250 V, TA = 150°C - - 20 ~A
VCE = 300 V, RSE = 2,7 kD - - 1 ~A
VCE = 300 V, TA = 150°C, RSE = 2,7 kD - - 50 ~A
Emitter cutoff current IEso - - 10 ~A
VES = 5 V
DC current gain ') hFE 40 - - -
Ic=25mA, VCE=20V
Ic = 10 mA, Is = 1 mA
Base-emitter saturation vOltage ' ) VSEsat - - 1 V
Ie = 10 mA, Is = 1 mA

Ic = 10 mA, VCE = 10 V, f= 20 MHz
Vcs = 30 V, f= 1 MHz
') Pulse test: t ~ 300 ~s, D = 20/0.
Siemens 431
BFN21
Total power dissipation Ptot = f (TA) Output capacitance Cob = f(VCE)

f=1 MHz
W pf
1,2 4
1"'1.0
i\.
0,8
\
\
\ 1\
0,6 2 \
1\ ~
0,4
i\
i\ I--
\ r-
0,2
\.
o ri\ o
o 50 100 150 0 ( o 10 20 30V
-~ -Ih
Pulse handling capability rth = fIt) Transition fraquency fT = f (lo)

(standardized) VCE=10V
K
W
10°
,~
5
r
'.
I
0.5
10" E! 0.2
5
~~ 0.05
0.1
0.02
0.01
0.005
r'-D=O
2 5
/
5
~
2
D=~ T
1r3
10-6 10-5 10- 4 10-3 10-2 10. 1 ~ S
-t
432 Siemens
BFN21
Collector current Ie = f (VSE) DC current gain hFE = f (l c)

VCE = 20V VCE=20V
mA
102
5
7
I
,
7 100 L-J-LLWlU-L.LLLWlL-LJ-'-LJJ.llL.-'--'-lilillI
0,5 1V 10"2 10"1 100 101 10 1 mA
-Ie
Collector cutoff current I cso = f (TA)

Vcs = 250 V
nA
10'
5
leBO 1_"
1
max 17
10
5
I" V
10 2
5
typ.
10'
5
/
10 0
5
, 1..1
50 100 150 O(
~TA
Siemens 433
NPN Silicon High-Voltage Transistor BFN22

• Low capacitance
• Complementary type: BFN 23 (PNP)

BFN 22 HB Q62702-F596 Q62702-F1024 SOT 23
Maximum ratings
RBE = 2,7 kQ
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
434 Siemens
BFN22

Ie = 1 mA
Ic=10f.lA
Collector-emitter breakdown voltage V(BR)CER 250 - - V
Ic = 10 f.lA, RBE = 2,7 kO
h = 10 f.lA
VCB = 200 V - - 100 nA
VCB = 200 V, TA = 150°C - - 20 f.lA
VCE = 250 V, RBE = 2,7 kO - - 1 f.lA
VCE = 250 V, TA = 150°C, RBE = 2,7 kO - - 50 f.lA
Emitter cutoff current hBo - - 10 f.lA
VEB = 5 V
Ie = 25 mA, VCE = 20V
I C = 10 mA, I B = 1 mA
Ic = 10 mA, IB = 1 mA

Transition frequency h - 100 - MHz
Ic = 10 rnA, VCE = 10 V, f= 20 MHz
') Pulse test: t:5, 300 f.ls, D = 20/0.
Siemens 435
BFN22
Total power dissipation Ptot = f(TA) Output capacitance Cob = f(VCE)

f=1 MHz
mW pF
400 4
~ot
I 300
1\
\
1\
1\
200 1\ \
1\
\
\.
100
r-
r-
1\
o l'. o
o 50 100 150 ·C o 10 20 30 V
-~ --I'h
Pulse handling capability rth = f (t) Transition frequency fT = f (J c)

K
W MHz
10° 10 3
~
lih ...r..r
I I ~
III
II I
0.5
0.2
1
0.1
5 0.05
0.02
~
0.01
0.005
D=O 5
10-2 1/
10-3
10-6 10-5
D=f
'" ~
10- 4
T
10- 3 10- 2 10- 1 10° 5
-t
436 Siemens
BFN22
Collector current Ie = f (VSE) DC current gain h FE = f (l cl

VCE=20V VCE=20V
mA
10 2
5
7
II
1 100 L.J-LLllilll-.L.LWlJIlL...Lli.WllL-LLWllI
0,5 1V 10-2 10- 1 10° 10' 10 2 mA
-Ie
Collector cutoff current I cso = f ( TA)

Vcs=200V
nA
10 4
max. 1/
I" 17
typ.
10·1 1/
o 50 100 150 O(
~TA
Siemens 437
PNP Silicon High-Voltage Transistor BFN23

• Low capacitance
• Complementary type: BFN 22 (NPN)

BFN 23 HC Q62702-F597 Q62702-F1064 SOT 23
Maximum ratings
RBE = 2,7 kO
TA = 25°C
Thermal resistance RthJA ::S: 350 K/W

junction - ambient
package mounted
on alumina
15 mm x 1.6.7 mm x 0.7 mm
438 Siemens
BFN23

Ic = 1 mA
Ic=10/lA
Collector-emitter breakdown voltage V(BR)CER 250 - - V
Ic = 10 /lA, RBE = 2,7 kQ
IE = 10 /lA
Vce = 200 V - - 100 nA
VCB = 200 V, TA = 150°C - - 20 /lA
VCE = 250 V, RBE = 2,7 kQ - - 1 /lA
VCE = 250 V, TA = 150°C, RBE = 2,7 kQ - - 50 /lA
Emitter cutoff current lEBO - - 10 /lA
VEe = 5V
Ic = 25 mA, VCE = 20V
I c = 10 mA, Ie = 1 mA
I c = 10 mA, I B = 1 mA

Ic = 10 mA, VCE = 10 V, f= 20 MHz
') Pulse test: t:$ 300 /ls, D = 20/0.
Siemens 439
BFN23
Total power dissipation Ptot = f( TA) Output capacitance Cob = f ( VCE)

f=l MHz
mW pF
400 4
'101
I
1\
300 3
1\
T
200
\ 1
\.
1\
\
1\
100 I--
I-.
1\
o o
o 50 100 " 150°C o 10 20 30 V
--~ -\{:E
Pulse handling capability rth = f(t) Transition frequency fT = f (I c)

(standardized) VCE= 10V
K
-.
W
10°
C,h fr
I ,
IIII
I
'0,5
0,2
r
0,1
0,05
, 0,02
0,01
0,005
2 D=Q 1111 5
1/
10- 3
D=!2..
T 1tn-
,,' i-;::T:7:! ,
~~ W' W3 W2 W' ~ ~s 5 10'
-t
440 Siemens
BFN23
Collector current Ie = f (VBE) DC current gain h FE = f (l cl

VCE=20V VCE=20V
mA
101
5
I
I
I 10° '--'--LLULW.---'--.LLU.illL--'-'-'-'-","--'-'-llilW
0,5 1V 10-1 10·' 10° 10' 101 mA

-Ie
Collector cutoff current ICBO = f( TA)

VCB=200V
max. /
~ ....Y'" /
typ.
, /
50 100 150 DC
-TA
Siemens 441
NPN Silicon High-Voltage Transistors BFN 24
BFN26

• Complementary types: BFN 25, BFN 27 (PNP)

BFN 24 FH Q62702-F747 Q62702-F1065 SOT 23
BFN 26 FJ Q62702-F750 Q62702-F976 SOT 23
Maximum ratings
Parameter Symbol BFN24 BFN26 Unit
TA = 25 DC
Storage temperature range T stg -65· .. +150 DC

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
442 Siemens
BFN24
BFN26

Ic = 1 rnA
BFN 24 250 - - V
BFN 26 300 - - V
Ic = 100!1A
BFN24 250 - - V
BFN26 300 - - V
le = 100!1A
VCB = 200 V BFN24 - - 100 nA
VCB = 250 V BFN26 - - 100 nA
VCB = 200 V, TA = 150°C BFN24 - - 20 !1A
VCB = 250 V, TA = 150°C BFN26 - - 20 !1A
VEB = 3V
DC current gain hFE
Ic = 1 rnA, VCE = 10V 25 - - -
Ic = 10 rnA, VCE = 10 V') 40 - - -
Ic = 30 rnA, VCE = 10 V') BFN24 40 - - -
BFN26 30 - - -
BFN24 - - 0,4 V
BFN26 - - 0,5 V

Ic = 20 rnA, VCE = 10 V, f= 20 MHz
') Pulse test: t:5. 300 !1s, D = 20/0.
Siemens 443
BFN24
BFN26
Total power dissipation Ptot = I (TA) Transition frequency IT = I (l e)

VCE = 10V
mW MHz
400 10 3
fr 5
I
/)01 '\
300 t
\
1\
200
\
1\
\
100
1\
v
V
o 1\
o 50 100 150°C 5 lOt
--~
Pulse handling capability rth = I(t) Operating range Ie = I(VCEO)

(standardized) TA = 25°C, D = 0
K
W mA
10° 10 3
~h
I 1
~
III I I
'0,5
0,2
1'-.1'-
\ 10us
0,1 100~s
"\.
0,05 '- lmsl~
1111
, 0.D2 10' lOOms
0,01
0,005
2 0=0 1111 SOOms
DC
t --1 tpl-- 5
o=flLrL
I-- T--I
10- 3 "' 1
10- 6 10- 5 10- 4 10- 3 10- 2 10- 1 10° lO ' s 5 lOt
~f
444 Siemens
BFN 24
BFN 26
Collector current I c = f (VeE) Collector cutoff current I ceo = f ( TA)

VCE = 10V Vee = 200 V
mA nA
103 10'
5 5
leBO I."
max V
/
101
5 typ.
10-1 10-1 IL
o 0,5 1,0 1,5 V o 50 100 150 O(
-VBE -lA
DC current gain h FE = f (/ c)
VCE = 10V
-
-
10°
10- 1 5 10° 5 10 1 5 10 2 5 103 mA
-Ie
Siemens 445
PNP Silicon High-Voltage Transistors BFN25
BFN27

• Complementary types: BFN 24, BFN 26 (NPN)

BFN25 FK Q62702-F749 Q62702-F 1066 SOT 23
BFN27 FL Q62702-F751 Q62702-F977 SOT 23
Maximum ratings
TA = 25°C
Thermal resistance RthJA ::5350 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
446 Siemens
BFN25
BFN27

Ic = 1 mA
BFN 25 250 - - V
BFN 27 300 - - V
Ic = 100 llA
BFN 25 250 - - V
BFN 27 300 - - V
IE = 100 llA
VCB = 200 V BFN 25 - - 100 nA
VCB = 250V BFN 27 - - 100 nA
VCB = 200 V, TA = 150 DC BFN 25 - - 20 llA
VCB = 250 V, TA = 150°C BFN 27 - - 20 llA
VEB = 3V
DC current gain hFE
Ic = 1 rnA, VCE = 10 V 25 - - -
Ic = 10 rnA, VCE = 10 V') 40 - - -
Ic = 30 rnA, VCE = 10 V') BFN 25 40 - - -
BFN27 30 - - -
I C = 20 rnA, I B = 2 rnA
BFN 25 - - 0,4 V
BFN 27 - - 0,5 V

Ic = 20 rnA, VCE = 10 V, f= 20 MHz
') Pulse test: t ~ 300 lls, D = 20/0.
Siemens 447
BFN25
BFN27
Total power dissipation Ptot = f (TA) Transition frequency fT = f (l c)

VCE = 10V
mW MHz
400 10 3
'101 \
t 300
1\
"-
\ ~
200
"-
\
100 /
I\. V
o \
o 50 100 150 ·C 5 10 1
-T. -Ie
Pulse handling capability rth = f (t) Operating range Ie = f(VCEO)

(standardized) TA = 25°C, D= 0
K
W rnA
10° 10 3
II 5
- '0,5
0,2
0,1
I
0,05
0,02
0,01
0,005
'01
I"
10~s
_\ 1\ 101ms
O~s
lOoms
2 0=0 1111
SOOms
DC
5
10- 3
O;~
T
'"
~ '"
T
-1
10-6 10- 5 10- 4 10- 3 10- 2 10- 1 10° 101 s 5 1Q1
-f
448 Siemens
BFN25
BFN27
Collector current Ie = f (VSE) Collector cutoff current I csa = f ( TA)

VCE = 10V Vcs=200V
rnA
103
5
I max. V
5 c....
.'" V
10'
5 typ.
1Cr
, j , 1/
o 0,5 1,0 1.5 V 50 100 150 O[
-'fiE -lA

VCE = 10V
hFE
10
5
3
gum••
1
100 '--'--'-.LJ.LWL----'--LL
10-' 5 10° 5 10' 5 10 2 5 10 3 A
-Ie
Siemens 449
NPN Silicon High-Voltage Transistors BFN 36; BFN 38
• Suitable lor video output stages in TV sets

• High breakdown vohage
• low collector -emitter saturation voltage E
Complementary types: BFN 37/39 (PNP)
Type Marking Ordering code (12-mm tape) Package*'

BFN36 BFN36 Q62702 - F1246 SOT-223
BFN3B BFN3B Q62702 - F1303 SOT-223
Maximum Ratings
Collector-emitter Yoltage VeEo 250 300 V
Col/ector·base yoltage VCBO 250 300 V
Total power dissipation, TA :S 25· C 'II Plot 1.5 W
Storage temperature range TSIg ·65 to +150 ·C
Thermal Resistance
Junction • ambient l' IRIhJA :s83.3 IKIW
'I Package mounted on an epoxy printed circuit board 40mm x 40mm x 1.5mm
Mounting pad lor the collector lead min 6cm2
, For detailed dimensions see chapter Package Outlines
450 Siemens
BFN 36; BFN 38
Characteristics
Parameter Unit
DC Characteristics
Collector-emitter .breakdown voltage V(BR)CEO
Ic = 1 rnA, IB = 0 BFN 36 250 - - V
BFN 38 300 - - V
Collector-base breakdown voltage V(BR}CBO

Ic = 100 llA, IB = 0 BFN 36 250 - - V
BFN 38 300 - - V
Emitter-base breakdown voltage V(BR}EBO

IE = .1 00 lIA, Ie = 0 5 - - V
VCB =200 V BFN 36 - - 100 nA
VcB =250 V BFN 38 - - 100 nA
VCB = 200 V, TA = 150°C BFN 36 - - 20 lI A
Vcs =250V, TA=150°C BFN 38 - - 20 Il A
VEB = 4 V, Ic = 0 - - 100 nA
Ic=1 rnA, VcE =10V 25 - - -
Ie = 10 rnA, VeE = 10 V 40 - - -
=
Ic=30 rnA, VeE 10 V BFN 36 40 - - -
le=30 mA,VeE = 10 V BFN 38 30 - - -
Collector-emitter saturation voltage 1) VeEsat
le=20 rnA, le=2 rnA BFN 36 - - 0.4 V
BFN 38 0.5 V
Base-emitter saturation voltage 1) VBEsat
Ie = 20 rnA, Is = 2 rnA - - 0.9 V
AC Characteristics
Ie =20 rnA, VeE = 10 V, f= 100 MHz - 70 - MHz
VCB = 30 V, f= 1 MHz - 1.5 - pF
1) Pulse test conditions: t;;::; 300lIS; D = 2%
Siemens 451
BFN 36; BFN 38
Total power dissipation p.o. = f (TA) Collector current Ie = f (VeE)

rnA VCE = 10V
2.0 103
W
5
1/
\
1.0 \. 101
5
0.5 \
i\
1-- 1--.- - - ---- r--\ -r--
r--r- 1--- -
o 1\ 10-1
o 50 100 O( 150 o 0,5 1,5 V
-1",.
Transition fraquency fr - f (l c) Collector cutoff current IceD = f ( TA)

MHz VCE -10V nA Vee = 200 V
10 1
f-----
r,
- f--..I-.j--++++·+-I-I-I~- .
- -
1~' =~~-~=~.:~2~1~~~~§
- -
5 - t-- -
- .. -
-/
;I -- -..
10·' / .. ~ ___ -'-'-L. .L--'

10'
10° 5 10' o so 100 150 O(
----7;.
452 Siemens
BFN 36; ElFN as
DC current gain hFE = ((le)

VeE = 10 V
1= 1=-- - "=
r- r- --
f-
f-
5
r-
r-
,
f-
10' t::
1= -
f=
f-
f- -
2 f-
f-
10° ~
10-' 5 10° 5 10' 5 10 1 5 lO J mA

-Ie
Siemens 453
PNP Silicon High-Voltage Transistors BFN 37; BFN 39
• Suitable for video output stages in lV sets

Complementary types: BFN 36/38 (NPN) E

BFN 37 BFN 37 Q6i702- F1304 SOT-223
BFN 39 BFN 39 Q62702- F130S SOT-223
Maximum Ratings
Collector-base voltage Vceo 250 300 V
Total power dissipation, TA :s25°C 1) PIoI 1.5 W
Storage temperature range Tslg -65 to + 150 °C
Thermal Resistance
Junction - ambient 1) :s83.3 IKIW
1) Package mounted on an epo~y printed circuit board 40mm x 40mm ~ 1.Smm
Mounting pad lor the collector lead min 6cm 2
454 Siemens
BFN 37; BFN 39
Characteristics
Parameter Unit
DC Characteristics
Collector-emitter breakdown voltage V(8R)CEO
Ic = 1 rnA, 18 =0 BFN 37 250 - - V
BFN 39 300 - - V
Collector-base breakdown voltage V(8R)CBO

Ic =100 pA, IB = 0 BFN 37 250 - - V
BFN 39 300 - - V
Emitter-base breakdown voltage 1) V(BR)EBO

Ie = 100 pA, IB = 0 5 - - V
Collector-base cutoff current IC80
VC8=200V BFN 37 - - 100 nA
VeB =250 V BFN 39 - - 100 nA
VCB = 200 V, TA =150°C BFN 37 - - 20 pA
VCB = 250 V, TA = 150°C BFN 39 - - 20 pA
VeB = 4 V, Ic = 0 - - 100 nA
Ic=l rnA, VcE =10V 25 - - -
Ic = 10 mA,VCE = 10 V 40 - - -
Ic = 30 mA,VCE = 10 V BFN 37 40 - - -
Ic=30 mA,VCE =10V BFN 39 30 - - -
Ic=20 rnA, ' B=2 rnA BFN 37 - - 0.4 V
BFN 39 0.5 V
Ic = 20 rnA, IB = 2 rnA - - 0.9 V
AC Characteristics
Ic =20 rnA, VCE =10 V, f= 100 MHz - 100 - MHz
VC8 = 30 V,f= 1 MHz - 2.5 - pF
1) Pulse test conditions: t ~ 300ps; D = 2%
Siemens 455
BFN 37; BFN 39
Total power dissipation PIOI = , ( TA) Collector current Ie - f (VaE)

1111. Vee = lOV
2.0 r-'T'--.--..-r---r--r-.--.- r- ,- - .-- 10'
W I-+-I-.I-+-~.-
5
P.o. 1/
t 1.5 H-t--I\.H-+-I+-t-t-++-t-H
5
I- -1\ 1-1- -1-+-1-1-+-+-1-1
1\
1.0 ~-l-+--I-H-'\.'l--+-t-t+-H-H 1)1
5
1-- +-1\ -I-t-+-t-J
0.5
1-++-1++-1I-+-Hi"': 1\ r- -
I\.
..,.
5
I- - .- - I - I- - "'-'-,-1'",,',
OLI-~'-~-~-~'_--l~--~'-"LL~~~~U 10"I I
o 50 100·C 150 o 0,5 1.0 1,5 V
---1A -"al
DC current gain hFe = f(lel Transition frequency fT = f (I c)

Vee - lOV MHz Vee = tOV
10)
~
~
f=
10 1 c:::: ~ ,- -
r= -
l-
1- -
I- t-
" 5
I- I f-
k.=: I-
~ f--. -
5 !--'
101 I-- --- I--.
I-- I- l.(.. _
I-- I- I-- .
1---
51-
1= t= 1--1) ---
1= 1= .
~
~~-
5 I- 1-
~1II111- Ifllllll-
I- -' -
100
10- 1
I-
5 10°
-
-
'--
5 10'
-
5 10 '
--
5 10) A
1-- - .
10' '--.
10° 5 10'
I j
- -. --
5 10 1
..
5 10'mA
-Ie "---/e
456 Siemens
BFN 37; BFN 39
Collector cutoff current ICBO = '(TAl
J
nA VCE = 200 V
5
=E't= ---I=" =-~--1
10' -I=r- =1= =
:=' '"
r=-:=~==~-=_==!)I=I=
0-;,1"='
-= ;Le
e-. - - - - - - -Lr- - 1-
- --
:7=_ =-
m I - -- -- - - --- ,;;ax [/ - - I-
10 __
~
5 :::e-.
I- -
-= ::-I=~c~ 12:
I-I-";.~ -
F=; -- --
-1-
1=
--I-
- +;;1"'-- - - ---1/
~~!;;:~~~~;~&~~~
Vi -
I- -- - - yp I-
10' 1=
5 ~~:~~~~i~~f5~::~~
----I-V -- -- I-
10· ~~~trt~~~~~i'rt~
1:-' -:~~!~~~=~-~~~=>~
o 50 100 150 DC
-r,.
Siemens 457
NPN Silicon RF Transistor BFP81
• For low-noise amplifiers up to 2 GHz at collector
~
currents from 0.5 to 25 mA.
CECC-type in preparation: CECC 50002/...

BIlAE
E~C
(tape and reel)
BFP81 FA Q 62702 - F1122 SOT-143
Maximum Ratings
Total power dissipation, TA :5 25 °C2 ) Ptot 280 mW
Ambient temperature range TA -65 ... +150 °c
Storage temperature range Ts1g -65 ... +150 °c
Thermal Resistance
Junction - ambient 1) I RthJA I :5450 KIW
1} Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm.
458 Siemens
BFP81
at TA = 25 cC, unless otherwise specified.
DC characteristics
min typ max
Collector-emitter breakdown voltage \l(BR)CEO 16 - - V
Ic = 1 rnA, IB = 0
Collector-base cutoff current ICBo - - 100 nA
VcB =15\f,IE=0
Emitter-base cutoff current lEBo - - 10 !IA
VEB = 2 \f, Ic = 0
DC current gain Iq,E -

lc= 5 rnA, VCE = 10V 50 - 250
Ic=15mA, VcE =10V 50 - -
Collector-emitter saturation voltage VCEsat - 0.2 0.4 V
Ic =30 rnA, IB=3mA
Siemens 459
BFP81
AC characteristics
min typ max
Transition frequency f-r GHz
Ic= 5 mA, VCE = 10 V,f= 200 MHz - 4.2 -
Ic = 15 rnA, VCE = 10V,f= 200 MHz - 5.8 -
Collector-base capacitance Ceb - 0.34 - pF
VcB =10V, VBE =Vbe=0,f=1 MHz
Collector-emitter capacitance Gee - 0.32 - pF
VcE =10V, VBE = Vbe=O,f= 1 MHz
Input capacitance Gibo - 1.2 - pF
VEB = 0.5 V, Ic = ie = 0, f= 1 MHz
Output capacitance Cobs - 0.65 - pF
VCE = 10V, VBE = Vbe=O, f= 1 MHz
Noise figure F dB
Ic=3mA, VcE =10V,f= 10 MHz, Zs = 75Q - 0.9 -
Ic = 5 mA, VCE = 10 V, f= 800 MHz, Zs = ZSopt - 1.25 -
Ic=5mA, VcE =10V,f= 2 GHz, Zs = Zsopt - 2.25 -
Power gain Gpe dB
Ic = 5 rnA, VCE = 10V, f= 800 MHz,
Zs = 50 Q, ZL = ZLopt - 15.5 -
Ic = 10 rnA, VCE = 10 V, f= 800 MHz,
Zs = 50 Q, ZL = ZLoPt - 16.5 -
Transducer gain l~lel2 - 15 - dB
Ic = 20 rnA, VCE = 10 V, f= 1 GHz, Zo = 50 Q
Linear output voltage Vol = Vo2 - 160 - mV
two-tone intermodulation test
Ic = 25 rnA, VCE = 10 V, diM = 60 dB
fl = 806 MHz, f2 = 81 0 MHz, Zs = ZL = 50 Q
Third order intercept point IP3 - 27 - dBm
Ic = 25 rnA, VCE = 10V, f= 800 MHz
460 Siemens
BFP81
Total power dissipation Ptot = f {T,J Transition frequency fT = f {lei

Package mounted on alumina f=200MHz
rnW GHz
400 6
+4-
Ih=5V
Plot V t-r-, I
V,V i\
t 300
4
Ih 1V
rt
1\
200 1\
\
3 I \
\
2
100
\
a 1'\
a 50 100 150 0 ( 10 20 30 rnA
----T,. -Ie
Collector-base capacitance Ccb = f (VeB)

VBE = Vbe=O. f= 1 MHz
pF
1
1\
0.5
\
"- I--.....
r-
--
10 20 V
----\I[B
Siemens 461
BFP81
Common Emitter Noise Parameters

Ie = 5 rnA, VeE = 10 V, Zo = 50 0
f Fmin Gp (Fmin) ropt RN N Fson Gp (Fso.,)
GHz dB dB MAG lANG 0 - dB dB
0.01 0.8 - (Zs = 1200) - - 1.1 -
0.8 1.25 16 0.26 177 9.6 0.151 1.4 15.5
2.0 2.25 10 0.32 178 8.6 0.334 2.7 8.5
Ie = 10 rnA, VeE = 10 V, Zo = 50 0
f Fmin Gp (Fmin) ropt RN N Fson Gp (Fso.,)
GHz dB dB MAG lANG 0 - dB dB
0.01 1.05 - (Zs = 75 0) - - 1.2 -
0.8 1.4 17 0.21 193 8.3 0.155 1.5 16.5
2.0 2.5 11 0.33 -167 10.8 0.413 2.9 9.5
Noise figure F = f (IcI

VeE = 10V, f= 10 MHz
dB
3
t
2
Zs=1S0Q
SOQ L
-
,/
7SQ" );( f-"
~~ f-"
r- ......::: ~ f-"
-
\""-. k ~
10 20 rnA
462 Siemens
BFP81
=
Circles of constant noise figure F f (ZS> Noise figure F = f (IcI
and available power gain Gav = f (ZS> VCE = 10V, f= 800 MHz, ZLoP,(G)
Ic = 5 rnA, VCE = 10\1, f= 800 MHz
dB
5
2
~~ r::: ~
\
I-.. r-
r-- -7s1 pt
-j50
10 20 rnA
-Ie
=
Circles of constant noise figure F f (ZS>
=
and available power gain Gav f (Zs)
Ic=10mA, VcE =10\l, f=800MHz
+j50
-j50
Siemens 463
BFP81
Circles of constant noise figure F = f (Zs) Noise figure F= f (/d

=
and available power gain Gav f (Zs) VCE = 10 V, f= 2 GHz, ZLopt (G)
Ic=5mA, VcE =10V,f=2GHz dB
5
+j50
vV
Zs=50S V V
V ~
.......
r'-- '-- ~ V V
\- - - ..-- Zsopt
-j50 10 20 mA
-Ie
Circles of constant noise figure F= f (Zs)

and available power gain Gav = f (Zs)
Ic = 10 mA, VCE = 10V, f= 2 GHz
+j50
-j50
464 Siemens
BFP81
Common Emitter Power Gain

Power gain Gm .. 15:".1 2 = f (lei Power gain Gms , 15:".1 2 = f (lei
VeE = 10 V, f= 200 MHz, Zo = 50 n VeE = 10 V, f= 500 MHz, Zo = 50 n
dB
30
6 m• ,,/
V
i.--
.......... 1-"'"
- r--
r-
.....
dB
30
- I-- 6~ .- I--
I-
/ ..........
/ 15 21.1 2
/
I V /"-
-'521 .1 2
-
II
10 10
mi-_1 512",jJ-~
r- 52
_1 52"1 6
\m'i 5t
li
r- "1
10 20 mA 10 20 mA
---Ie -Ie
Power gain Gms , 15:".1 2 =f (lei Power gain Gma , 15:".12 = f (lei
VeE = 10 V, f= 1 GHz, Zo = 50 n VeE = 10V, f=2 GHz, Zo= 50n
dB dB
30 30
6m•
......
V
/ r- r- 6..
I
V I
15 21.1 2
10
/
10 r- ;- i .1_12
521
- /""
52 "1
6 m, = 1
I 1 I
512. - 6m .= 15'2.
5 2"1"( k-h 2-1')
o o I I [ [ I I
o 10 20 rnA o 10 20 rnA
-Ie ---Ie
Siemens 465
BFP81
Power gain Gma• Gms• 18.!'e1 2 = f (f) Power gain Gma• Gms• 18.!'e12 =f (f)
Ic = 2mA, VCE = 10\1, Zo = 50 0 Ic = 5 rnA, VCE = 10\1, Zo =500
dB dB
30 30
6ma 6ma .............

6ms 6ms
1521,1 2
t 20
"
'" ........,
~ms
15210 12
t 20
r---
"
r--l s21l
'" I"
6ms
-
_ 1521.1 2 I'-- "'-
'" " \ 6ma
10
" "'"6m~ 10
\.
"-\
i\.
\
"-
6 ms = jS21'j
S12,
"- 6 ms = IS21'I
512,
'\
\
6 ma = 1521 '1'(k - [k2:1) '\ 521 '1 '(k- .[k2:1
6 ma --1 S k -1)
S12, 12,
o 2 3 GHz
o
0.1 2 3 GHz
0.1 0.5 0.5
-f -f
Power gain Gma• Gms• 18.!,.I' = f (f) Power gain Gma• Gms• 18.!'el' = f (f)
Ic=10mA, VCE=10\l,Zo=500 Ic = 20 rnA,
VCE = 10\1, Zo= 50 0
dB dB
30 30
6ma
6ms ." "" ""'- I 1
...... 6ms
,
I
6 ma
6ms
""'- " "'\
"2'
II
6mls I
15 21,1 2
t 20
'" IS21.12"\
t'--
\
1521,1 2
t 20
- IS21.1 \
1"-
~ 6ma _
\6ffia _\
\ I\. \ I\.
10 \ 10 \ "-
I- I
6ms = S21'j
512,
\ I- 6ms =15512,
21 '1 \
i- 6ma =15 21 '1'(k_Jk 2_1') f- 6 ma =1521e1'(k -,fk2:1)
f- 512,
I-- I' S12, I I I I I II I I I 11111
o o 0.5 235Hz
0.1 0.5 2 3 GHz 0.1
-f -f
466 Siemens
BFP81
Common Emitter 5 Parameters

Ic = 1 rnA, VCE = 1 V, Zo = 50 n
f 8 11 5.11 8 12 5.12
GHz MAG ANG MAG ANG MAG ANG MAG ANG

0.10 0.959 - 18.9 3.63 166.5 0.040 78.6 0.985 - 7.9
0.15 0.948 - 28.1 3.57 159.9 0.058 72.9 0.971 -11.7
0.20 0.934 - 37.1 3.49 153.6 0.076 67.6 0.953 -15.3
0.25 0.916 - 45.8 3.39 147.3 0.092 62.6 0.931 -18.6
0.30 0.896 - 54.0 3.26 141.4 0.106 57.8 0.907 -21.7
0.40 0.868 - 69.1 3.01 131.2 0.130 49.0 0.861 -27.3
0.50 0.832 - 83.2 2.78 121.7 0.148 41.4 0.814 -32.0
0.60 0.802 - 95.6 2.54 113.2 0.161 35.0 0.773 -35.8
0.70 0.773 -107.0 2.34 105.4 0.171 29.4 0.736 -39.2
0.80 0.758 -116.5 2.15 98.6 0.180 24.6 0.709 -41.9
0.90 0.754 -126.0 2.00 92.3 0.186 19.5 0.681 -44.9
1.00 0.741 -135.0 1.86 86.2 0.188 15.2 0.655 -47.3
1.20 0.721 -150.2 1.61 75.4 0.189 8.5 0.618 -51.9
1.40 0.706 -162.6 1.42 66.3 0.188 2.7 0.595 -56.7
1.50 0.701 -168.3 1.34 62.0 0.186 0.2 0.587 -59.0
1.60 0.699 -173.8 1.27 57.7 0.184 -1.9 0.582 -61.3
1.80 0.707 176.0 1.16 49.6 0.178 -6.1 0.572 -65.6
2.00 0.711 167.0 1.05 42.1 0.170 -9.9 0.563 -69.9
Siemens 467
BFP81
Ic = 2 rnA, VCE = 1 V, ~ = 50 n
f 8 11 ~1 812 ~2
0.10 0.921 - 25.8 6.99 162.9 0.038 75.5 0.968 -12.0
0.15 0.904 - 38.1 6.76 154.8 0.055 68.6 0.938 -17.4
0.20 0.880 - 49.6 6.44 147.2 0.070 62.3 0.901 -22.4
0.25 0.854 - 60.4 6.11 140.1 0.083 56.5 0.861 -26.8
0.30 0.827 - 70.0 5.71 133.8 0.094 51.5 0.820 -30.5
0.40 0.798 - 87.7 5.09 123.5 0.111 42.5 0.747 -37.1
0.50 0.761 -102.9 4.50 114.1 0.122 35.6 0.681 -41.8
0.60 0.733 -115.5 3.99 106.4 0.129 30.2 0.630 -45.5
0.70 0.712 -126.4 3.58 99.5 0.134 26.0 0.589 -48.3
0.80 0.699 -135.2 3.21 93.6 0.139 22.4 0.559 -50.6
0.90 0.697 -143.1 2.95 88.5 0.142 18.7 0.532 -53.3
1.00· 0.694 -151.3 2.70 83.2 0.142 15.7 0.507 -55.5
1.20 0.681 -164.8 2.30 74.1 0.142 11.5 0.474 -59.3
1.40 0.682 -175.6 2.00 66.4 0.142 8.0 0.455 -63.4
1.50 0.681 179.9 1.89 62.9 0.140 6.6 0.447 -65.4
1.60 0.679 174.9 1.78 59.1 0.139 5.7 0.444 -67.3
1.80 0.685 166.5 1.60 52.0 0.137 3.9 0.438 -71.0
2.00 0.691 158.7 . 1.45 45.5 0.133 2.3 0.432 -75.0
468 Siemens
BFP81
Ic = 2 mA, VCE = 3 V, Zo = 50 n
f 5 11 8.21 5 12 8.22

0.10 0.930 - 22.1 7.00 165.2 0.027 77.8 0.979 - 8.6
0.15 0.914 - 32.8 6.83 158.0 0.039 71.7 0.959 -12.5
0.20 0.896 - 43.0 6.59 151.2 0.050 66.1 0.933 -16.2
0.25 0.873 - 52.6 6.32 144.7 0.060 60.9 0.905 -19.5
0.30 0.848 - 61.4 5.98 138.8 0.068 56.3 0.876 -22.4
0.40 0.821 - 78.0 5.44 129.0 0.083 47.9 0.819 -27.5
0.50 0.781 - 92.8 4.91 119.8 0.092 41.0 0.765 -31.3
0.60 0.752 -105.5 4.41 112.0 0.099 35.7 0.721 -34.3
0.70 0.725 -116.7 4.00 105.1 0.104 31.3 0.685 -36.6
0.80 0.709 -125.7 3.61 99.2 0.108 27.8 0.659 -38.5
0.90 0.705 -134.0 3.34 94.0 0.111 24.0 0.633 -40.6
1.00 0.698 -142.8 3.08 88.6 0.112 20.9 0.610 -42.5
1.20 0.679 -157.3 2.64 79.4 0.113 16.7 0.578 -45.5
1.40 0.677 -169.1 2.31 71.5 0.113 13.4 0.559 -49.0
1.50 0.675 -174.1 2.17 68.1 0.112 11.9 0.551 -50.6
1.60 0.673 -179.3 2.06 64.3 0.111 11.2 0.547 -52.2
1.80 0.675 171.7 1.84 57.2 0.109 9.8 0.540 -55.5
2.00 0.680 163.2 1.67 50.7 0.106 8.6 0.532 -58.9
2.50 0.717 146.0 1.33 36.3 0.100 10.1 0.523 -70.2
3.00 0.728 130.5 1.10 22.6 0.097 14.3 0.533 -80.1
Siemens 469
BFP81
Ic = 5 mA, VCE = 3 V, Zo = 50 Q
f S" 8.2, S'2 8.22
~Hz MAG ANG MAG ANG MAG ANG MAG. ANG
0.10 0.844 - 35.5 15.15 157.5 0.025 71.7 0.938 -15.4
0.15 0.814 - 51.6 14.18 147.7 0.035 64.0 0.885 -21.6
0.20 0.780 - 66.0 13.04 139.0 0.043 57.5 0.825 -26.8
0.25 0.747 - 78.6 11.92 131.4 0.049 52.2 0.767 -30.8
0.30 0.717 - 88:9 10.78 125.3 0.054 48.3 0.717 -33.8
0.40 0.706 -107.8 9.23 115.8 0.061 40.3 0.633 -39.3
0.50 0.670 -123.0 7.86 107.3 0.065 36.1 0.565 -41.8
0.60 0.650 -134.7 6.79 100.6 0.068 33.5 0.519 -43.5
0.70 0.635 -144.3 5.97 95.0 0.071 32.1 0.487 -44.7
0.80 0.626 -151.6 5.28 90.4 0.074 31.0 0.466 -45.9
0.90 0.637 -158.1 4.81 86.3 0.076 28.7 0.444 -47.8
1.00 0.638 -165.5 4.38 81.9 0.076 27.9 0.424 -48.8
1.20 0.631 -177.2 3.68 74.5 0.079 28.0 0.400 -50.9
1.40 0.639 173.6 3.18 68.2 0.082 27.3 0.386 -54.0
1.50 0.639 169.7 2.99 65.2 0.083 27.8 0.381 -55.3
1.60 0.639 165.3 2.82 62.0 0.084 28.3 0.379 -56.8
1.80 0.644 157.9 2.51 55.9 0.087 28.9 0.376 -59.7
2.00 0.651 151.1 2.26 50.3 0.090 29.5 0.371 -63.0
2.50 0.692 137.3 1.80 37.9 0.098 31.5 0.365 -74.6
3.00 0.704 123.8 1.49 25.5 0.109 32.5 0.377 -84.3
470 Siemens
BFP81
Ic = 2 rnA, VCE = 6 V. 2D = 50 n
f 8" ~, 8 ,2 ~2
0.10 0.935 - 20.7 6.91 166.0 0.022 78.6 0.983 - 7.2
0.15 0.922 - 30.7 6.77 159.3 0.032 72.7 0.967 -10.6
0.20 0.903 - 40.3 6.56 152.7 0.042 67.7 0.945 -13.7
0.25 0.881 - 49.5 6.33 146.5 0.050 62.8 0.922 -16.6
0.30 0.857 - 57.9 6.02 140.7 0.058 58.3 0.897 -19.0
0.40 0.830 - 74.0 5.53 131.1 0.070 50.1 0.849 -23.5
0.50 0.790 - 88.5 5.01 122.1 0.079 43.4 0.802 -26.8
0.60 0.759 -101.1 4.53 114.3 0.085 38.1 0.763 -29.4
0.70 0.731 -112.2 4.13 107.4 0.090 33.8 0.731 -31.6
0.80 0.712 -121.6 3.74 101.4 0.094 30.2 0.707 -33.3
0.90 0.706 -129.9 3.47 96.2 0.097 26.6 0.684 -35.3
1.00 0.700 -138.8 3.21 90.8 0.098 23.4 0.662 -36.9
1.20 0.679 -153.7 2.76 81.4 0.099 19.2 0.632 -39.8
1.40 0.673 -166.0 2.41 73.6 0.099 16.0 0.614 -43.0
1.50 0.670 -171.0 2.27 70.0 0.098 14.6 0.607 -44.5
1.60 0.668 -176.4 2.15 66.2 0.097 14.0 0.603 -46.0
1.80 0.670 174.2 1.93 59.1 0.096 12.9 0.596 -49.0
2.00 0.674 165.4 1.75 52.7 0.093 12.0 0.589 -52.2
2.50 0.709 147.6 1.40 38.2 0.088 14.3 0.577 -62.6
3.00 0.719 131.6 1.16 24.4 0.086 19.9 0.585 -72.0
5", Sz, = f (f) St2. $", = f (f)

Ic = 2 mA, VCE = 6 V, Zo = 50 n Ic =2 mA, VCE = 6 V, Zo = 50 n
+j50 90·
160· 0
-j50 -90·
Siemens 471
BFP81
Ic = 5 rnA, VCE = 6 V, Zo = 50 n
f 8 11 5.!1 ~2 5.!2

0.10 0.859 - 32.4 14.96 159.0 0.021 73.3 0.951 -12.6
0.15 0.829 - 47.4 14.12 149.7 0.029 65.9 0.907 -17.9
0.20 0.794 - 60.8 13.11 141.3 0.036 59.8 0.855 -22.3
0.25 0.762 - 72.9 12.08 133.9 0.042 54.5 0.806 -25.7
0.30 0.728 - 82.9 11.00 127.7 0.047 50.6 0.761 -28.1
0.40 0.713 -101.8 9.53 118.2 0.054 42.8 0.685 -32.8
0.50 0.672 -117.2 8.18 109.5 0.057 38.4 0.624 -34.8
0.60 0.647 -129.2 7.11 102.7 0.060 35.7 0.581 -36.3
0.70 0.628 -139.1 6.26 96.9 0.063 34.3 0.551 -37.3
0.80 0.618 -146.6 5.55 92.3 0.066 32.9 0.532 -38.3
0.90 0.626 -153.7 5.07 88.1 0.068 30.6 0.511 -39.9
1.00 0.626 -161.3 4.62 83.6 0.068 29.8 0.492 -40.7
1.20 0.618 -173.6 3.89 76.0 0.070 30.0 0.469 -42.6
1.40 0.626 176.6 3.38 69.6 0.073 29.4 0.456 -45.4
1.50 0.623 172.6 3.17 66.6 0.073 29.8 0.451 -46.5
1.60 0.626 168.1 2.99 63.4 0.074 30.5 0.448 -47.9
1.80 0.629 160.3 2.66 57.3 0.078 31.4 0.445 -50.6
2.00 0.636 153.3 2.40 51.8 0.080 32.2 0.441 -53.6
2.50 0.676 139.0 1.91 39.1 0.088 35.0 0.431 -63.9
3.00 0.689 125.1 1.58 26.5 0.099 36.5 0.440 -73.1
S". s", = f (f) =

S,2, 8" f (f)
Ic=SrnA, VcE =6V,Zo=Son Ic= S rnA, VCE = 6 V, Zo= son
1800 o
-j50 _90·
472 Siemens
BFP 81
Ic = 10 rnA, VCE = 6 V, 20 = 50 Q
f 8
" ~, 8 '2 ~2
0.10 0.764 - 47.7 24.13 150.6 0.019 67.6 0.893 -18.9
0.15 0.724 - 67.5 21.53 139.2 0.025 59.2 0.812 -25.3
0.20 0.685 - 84.0 18.95 129.9 0.030 53.4 0.736 -29.8
0.25 0.653 - 97.2 16.67 122.5 0.033 49.6 0.670 -32.5
0.30 0.626 -107.2 14.62 116.8 0.036 47.1 0.622 -34.1
0.40 0.638 -125.6 12.14 108.4 0.040 40.6 0.542 -38.0
0.50 0.607 -139.8 10.06 100.8 0.042 39.7 0.486 -38.1
0.60 0.594 -150.0 8.55 95.1 0.045 40.0 0.455 -38.3
0.70 0.584 -157.9 7.42 90.3 0.048 40.7 0.434 -38.4
0.80 0.578 -163.4 6.52 86.6 0.051 40.7 0.423 -39.2
0.90 0.595 -168.9 5.92 83.0 0.053 39.1 0.406 -40.7
1.00 0.600 -175.4 5.36 79.1 0.054 40.0 0.391 -41.2
1.20 0.598 174.5 4.48 72.7 0.059 42.2 0.376 -42.8
1.40 0.610 166.6 3.88 67.1 0.064 41.9 0.366 -45.6
1.50 0.610 163.2 3.63 64.3 0.066 42.8 0.364 -46.6
1.60 0.611 159.1 3.42 61.4 0.069 43.7 0.363 -48.0
1.80 0.615 152.5 3.03 55.8 0.074 44.3 0.363 -50.9
2.00 0.623 146.5 2.73 50.7 0.079 44.4 0.360 -54.0
2.50 0.668 134.2 2.17 39.2 0.093 44.8 0.352 -64.9
3.00 0.680 121.5 1.80 27.3 0.107 43.6 0.362 -74.3
5, .. 5z2 = f (f) 5,2, $." = f (f)

Ie = 10 mA, VeE = 6 V, Zo = 50 n Ie = 10 mA, VeE = 6 V, Zo = 50 n
+j50
180·
-j50 _90·
Siemens 473
BFP81
Ic = 20 rnA, VCE = 6 V. Zo = 50 Q
f 8" 8:1, 8 '2 8:12

0.10 0.660 - 69.0 33.24 140.5 0.016 61.4 0.803 -25.2
0.15 0.626 - 92.6 27.53 127.9 0.020 53.9 0.690 -31.0
0.20 0.599 -109.8 22.90 118.9 0.023 49.7 0.604 -34.0
0.25 0.582 -122.2 19.35 112.3 0.025 48.1 0.543 -35.0
0.30 0.565 -130.5 16.52 107.7 0.028 47.8 0.505 -35.2
0.40 0.606 -146.0 13.34 100.5 0.030 43.4 0.436 -37.6
0.50 0.586 -157.5 10.84 94.1 0.033 46.0 0.398 -35.9
0.60 0.578 -165.4 9.10 89.4 0.036 48.0 0.379 -35.3
0.70 0.571 -171.4 7.84 85.4 0.039 49.9 0.369 -35.2
0.80 0.568 -175.4 6.86 82.3 0.043 49.9 0.365 -36.2
0.90 0.588 -179.5 6.20 79.2 0.046 48.5 0.351 -37.8
1.00 0.595 175.1 5.59 75.6 0.047 50.4 0.341 -38.1
1.20 0.597 166.7 4.66 69.8 0.054 52.4 0.333 -39.9
1.40 0.612 160.0 4.03 64.8 0.060 51.7 0.326 -43.0
1.50 0.612 156.9 3.77 62.1 0.063 52.4 0.325 -44.2
1.60 0.612 153.4 3.55 59.3 0.066 53.0 0.326 -45.7
1.80 0.617 147.4 3.14 54.0 0.073 52.8 0.328 -48.9
2.00 0.624 142.0 2.83 49.2 0.080 52.2 0.327 -52.3
2.50 0.670 131.1 2.25 38.1 0.096 50.6 0.320 -63.9
3.00 0.683 119.0 1.86 26.4 0.112 47.9 0.331 -73.7
=
s", s"" f (f) S,2, 5" = f (f)
Ie = 20 mA, VeE = 6 V, Za = son Ie = 20 mA, VeE = 6 V, Zo = son
90·
180· o
-j50 _90·
474 Siemens
BFP81
Ic = 2 mA, VCE = 10 V, Zo = 50 n
f S" ~, S'2 ~2
0.10 0.940 - 19.8 6.80 166.5 0.020 79.0 0.985 - 6.6
0.15 0.927 - 29.5 6.66 159.9 0.029 73.5 0.971 - 9.7
0.20 0.910 - 38.7 6.47 153.6 0.038 68.4 0.952 -12.5
0.25 0.889 - 47.5 6.27 147.5 0.046 63.7 0.930 -15.2
0.30 0.864 - 55.8 5.97 141.8 0.053 59.4 0.908 -17.4
0.40 0.838 - 71.5 5.51 132.4 0.065 51.4 0.864 -21.6
0.50 0.797 - 85.8 5.01 123.3 0.073 44.7 0.820 -24.8
0.60 0.764 - 98.2 4.55 115.6 0.080 39.4 0.785 -27.3
0.70 0.735 -109.3 4.16 108.6 0.084 35.0 0.754 -29.3
0.80 0.714 -118.6 3.77 102.7 0.088 31.5 0.731 -31.0
0.90 0.710 -127.2 3.51 97.5 0.091 27.9 0.709 -32.8
1.00 0.699 -136.3 3.25 92.0 0.092 24.8 0.689 -34.3
1.20 0.676 -151.3 2.80 82.6 0.093 20.6 0.659 -37.1
1.40 0.671 -163.8 2.46 74.7 0.094 17.3 0.642 -40.2
1.50 0.666 -168.9 2.31 71.1 0.092 16.0 0.634 -41.7
1.60 0.663 -174.5 2.19 67.3 0.091 15.4 0.630 -43.1
1.80 0.664 175.9 1.97 60.1 0.090 14.2 0.624 -45.9
2.00 0.668 166.8 1.79 53.7 0.088 13.4 0.616 -49.0
2.50 0.701 148.8 1.43 39.0 0.083 16.1 0.604 -58.9
3.00 0.715 132.6 1.18 25.3 0.082 21.8 0.611 -67.9
511 , 522 = f (f) 5'2. 5", = f (f)

Ic=2 mA, VCE = 10V, Zo = 50[1 Ic =2 mA, VCE = 10V, Zo=50 [1
+j50 90 0
- j 50 -900
Siemens 475
BFP81
Ic = 5 mAo VCE = 10 V, Zo = 50 Q
f 5.1 ~1 8 12 ~2
0.10 0.873 - 30.5 14.61 159.9 0.019 74.1 0.956 -11.4
0.15 0.844 - 44.7 13.87 150.9 0.027 67.1 0.917 -16.1
0.20 0.809 - 57.6 12.94 142.7 0.034 61.0 0.871 -20.2
0.25 0.775 - 69.2 11.99 135.4 0.039 56.0 0.825 -23.3
0.30 0.742 - 79.1 10.97 129.3 0.044 52.0 0.785 -25.6
0.40 0.720 - 97.6 9.57 119.8 0.051 44.3 0.714 -30.0
0.50 0.675 -113.0 8.27 111.0 0.055 39.7 0.654 -32.0
0.60 0.647 -125.3 7.20 104.1 0.058 36.8 0.613 -33.3
0.70 0.626 -135.3 6.36 98.3 0.060 35.2 0.584 -34.3
0.80 0.613 -143.2 5.65 93.5 0.063 33.9 0.565 -35.3
0.90 0.621 -150.4 5.17 89.3 0.065 31.6 0.545 -36.7
1.00 0.619 -158.4 4.72 84.6 0.065 30.7 0.526 -37.5
1.20 0.608 -171.1 3.98 77.0 0.067 30.6 0.504 -39.4
1.40 0.615 179.0 3.45 70.5 0.070 30.0 0.490 -42.0
1.50 0.613 174.7 3.24 67.5 0.071 30.3 0.485 -43.1
1.60 0.613 170.0 3.06 64.2 0.071 31.2 0.483 -44.4
1.80 0.617 162.1 2.72 58.1 0.074 32.0 0.480 -47.0
2.00 0.623 154.9 2.46 52.5 0.077 32.7 0.474 -49.8
2.50 0.665 140.1 1.96 39.8 0.084 35.9 0.463 -59.5
3.00 0.679 126.1 1.62 27.1 0.094 37.6 0.472 --68.2
s". 5.>2 = f (f) S,2. 5.>, = f (f)

Ie = 5 rnA, VeE = 1011, Zo=50Q Ie = 5 rnA, VeE = 1011, Zo= 50 Q
90·
160· o
-j50 -90·
476 Siemens
BFP 81
Ic=10mA, VCE=10V,Zo=50Q
f S" ~, S'2 ~2
0.10 0.794 - 43.8 23.34 152.3 0.018 69.0 0.907 -16.8
0.15 0.750 - 62.4 21.08 141.1 0.024 60.8 0.835 -22.6
0.20 0.707 - 78.1 18.73 132.0 0.029 55.0 0.764 -26.8
0.25 0.670 - 91.2 16.61 124.5 0.032 50.9 0.703 -29.4
0.30 0.637 -101.2 14.65 118.7 0.035 48.3 0.657 -31.0
0.40 0.640 -120.1 12.26 110.1 0.039 41.9 0.579 -34.5
0.50 0.606 -134.5 10.22 102.3 0.042 40.5 0.526 -34.8
0.60 0.586 -145.2 8.70 96.4 0.044 40.2 0.493 -34.9
0.70 0.574 -153.6 7.56 91.5 0,046 40.8 0.472 -35.0
0.80 0.567 -159.5 6.66 87.7 0.050 40.8 0.461 -35.8
0.90 0.584 -165.2 6.05 84.1 0.052 39.3 0.445 -37.2
1.00 0.585 -172.2 5.48 80.1 0.053 40.0 0.430 -37.7
1.20 0.583 177.3 4.58 73.5 0.057 41.9 0.415 -39.1
1.40 0.594 168.9 3.97 67.8 0.062 41.8 0.405 -41.7
1.50 0.594 165.3 3.72 65.0 0.064 42.6 0.402 -42.7
1.60 0.594 161.1 3.50 62.1 0.066 43.6 0.401 -44.0
1.80 0.598 154.4 3.11 56.4 0.072 44.3 0.401 -46.7
2.00 0.607 148.0 2.80 51.3 0.076 44.5 0.397 -49.7
2.50 0.652 135.2 2.23 39.7 0.089 45.0 0.387 . -59.7
3.00 0.665 122.4 1.85 27.7 0.103 44.2 0.396 -68.7
5 11 , Sz, = f (f) 5 ,2• 5", = f (f)

Ic=10mA, VcE=10v,Zo=50n Ic = 10 mA, VCE = 10V,Zo=50n
1800
-j50 -90 0
Siemens 477
BFP81
Ic = 20 mA, VCE = 10 V, Zo = 50 n
f 5 11 8.21 ~2 8.22

0.10 0.707 - 61.6 31.92 142.9 0.016 63.1 0.830 -22.1
0.15 0.658 - 84.0 26.93 130.5 0.020 55~ 1 0.728 -27.6
0.20 0.619 -101.2 22.66 121.3 0.023 50.7 0.646 -30.4
0.25 0.592 -113.9 19.30 114.4 0.025 48.6 0.587 -31.6
0.30 0.570 -122.7 16.56 109.6 0.028 47.9 0.549 -31.8
0.40 0.597 -139.7 13.46 102.1 0.030 43.4 0.480 -34.0
0.50 0.572 -152.0 10.96 95.4 0.033 45.3 0.442 -32.5
0.60 0.562 -160.7 9.22 90.5 0.036 47.1 0.423 -32.0
0.70 0.553 -167.1 7.95 86.5 0.039 48.9 0.413 -31.9
0.80 0.549 -171.5 6.97 83.2 0.043 49.0 0.408 -32.9
0.90 0.570 -176.2 6.31 80.0 0.045 47.7 0.394 -34.3
1.00 0.575 178.1 5.70 . 76.3 0.047 49.3 0.384 -34.6
1.20 0.575 169.2 4.75 70.4 0.053 51.4 0.376 -36.2
1.40 0.591 162.1 4.11 65.2 0.059 50.9 0.369 -39.2
1.50 0.590 158.8 3.84 62.6 0.061 51.6 0.368 -40.3
1.60 0.591 155.2 3.61 59.7 0.065 52.2 0.368 -41.7
1.80 0.596 149.1 3.21 54.4 0.071 52.0 0.370 -44.7
2.00 0.604 143.7 2.88 49.5 0.077 51.5 0.368 -47.8
2.50 0.649 132.2 2.29 38.3 0.092 50.4 0.358 -58.5
3.00 0.665 120.1 1.89 26.5 0.107 47.8 0.369 -67.8
5 11 , 5,,2 = f If) S,2' 5", =f If)

Ic =20 mA, VCE = 10V, Zo = 500 Ic = 20 mA, VCE = lOll, Zo=50 0
+j50
0.1-~~~
1800 o
-j50 -90 0
478 Siemens
NPN Silicon RF Transistor BFP93A
• For broadband amplifiers and oscillators up to 2 GHz at
~
collector currents from 5 to 30 mA.
CECC-type in preparation: CECC 50002/ ...

BIlME
E~C
(tape and reel)
BFP93A FE Q 62702 - F1144 SOT-143
Maximum Ratings
Col/ector current Ic 50 rnA
Total power dissipation, TA $ 25 °C2 ) Ptot 280 rnW
Ambient temperature range TA -65 ... +150 °C
Thermal Resistance
Junction - ambient 1) RthJA 1$450 KIW
Siemens 479
BFP93A
DC characteristics
min typ max
Collector-emitter breakdown voltage \l(BR)CEO 12 - - V
Ic=1 mA,/B=O
Collector-base cutoff current ICBO - - 50 nA
VCB = 5 \I, IE = 0
Emitter-base cutoff current lEBO - - 10 IIA
VEB=2\1,/c=0
DC current gain hroE 40 90 250 -
Ic = 30 mA, VCE = 5 V
Ic= 50 mA, I B =5mA
480 Siemens
BFP93A
AC characteristics
min typ max
Transition frequency fT - 5.5 - GHz
Ic = 30 rnA, VCE = 5 V, f= 200 MHz
Collector-base capacitance Ceo - 0.47 - pF
Vcs = 10V, VSE = Voe = 0, f= 1 MHz
Collector-emitter capacitance Cce - 0.34 - pF
VCE = 10V, VSE = Voe = 0,(= 1 MHz
Input capacitance c'oo - 2.2 - pF
VES = 0.5 v,/c = ic = 0, f= 1 MHz
Output capacitance Coos - 0.8 - pF

VCE = 10 V, VSE = Voe = 0, f= 1 MHz
Noise figure F dB
Ic= 5 rnA, VCE = 8V, f= 10 MHz, Zs = 50 Q - 1.1 -
le= 5 rnA, VeE = 8 V, f= 800 MHz, Zs = Zsopt - 1.7 -
Ic = 30 rnA, VCE = 8 V, f= 800 MHz, Zs = ZSopt - 2.6 -
Power gain Gpe - 16.5 - dB
Ie = 30 rnA, VCE = 8 V, f= 800 MHz,
Zs = Zsopt. ZL = ZLOPt
Transducer gain l~lel2 - 13.4 - dB
Ic=30mA, VcE =8V, f= 1 GHz,ZQ=50Q
Linear output voltage Vol = V02 - 280 - mV
Ic = 30 rnA, VCE =8 V, oiM = 60 dB
fl = 806 MHz, f2 = 810 MHz, Zs = ZL = 50 Q
Ic = 30 rnA, VCE = 8 V, f= 800 MHz
Siemens 481
BFP93A
Total power dissipation p.o. = f (TAl Transition frequency fT = f (Ic)

Package mounted on alumina VCE = 5 V, f= 200 MHz
rnW GHz
400 6
",
I -' - -
Plot
./
1 300 V
4 /
\
200 1\
\ 3
/
I\.
1\
2
I
I
100
\
1\
1'\
50 100 Is0 0(
10 20 30 40 50 rnA
-Ie
Collector-base capacitance Ceb = f (Vca)

VSE = Vbe=O, f=1 MHz
pF
1
\
\
0.5 "-
-- :---
r-
10 20 V
-liB
482 Siemens
BFP93A

Ie = 5 rnA, VeE = 8 V. Zo = 50 il
f Fmin Gp (Fmin) T opt RN N FSOQ Gp (Fson>
GHz dB dB MAG JANG il - dB dB
0.01 0.8 - (Zs = 150 il) - - 1.1 -
0.8 1.7 13.5 0.26 1124 8.3 0.199 1.8 13
Ie = 30 rnA, VeE = 8 V. Zo = 50 il
f Fmin Gp (Fmin) Topt RN N FSOQ Gp (Fson>
GHz dB dB MAG lANG il - dB dB
0.01 2.0 - (Zs = 100 il) - - 2.15 -
0.8 2.6 15.5 0.2 1156 10.9 0.31 2.85 15
Noise figure F= f (lei

VCE=8\1, f= 10 MHz
dB
3
t 1;'1--'
2
?s=SOQ\ ';I;'r-"
~ Zsopt
, I::::
I/t/
~ V
1\ ./
10 20 30 mA
-Ie
Siemens 483
BFP93A
Circles of constant noise figure F = f (Zs) Noise figure F = f (Iel

and available power gain Gav = f (Zs) VCE = 8 V, f= 800 MHz, ZLopt (G)
Ie = 5 rnA, VeE = 8 V, f= 800 MHz
dB
+jSO 3
Zs=SOQ V
F
Y vi-'"
t 0
~/ Zs opt
r;::v
"I:: . . .
-jSO
o
o 10 20 30 rnA
-Ie
Circles of constant noise figure F = f (Zs)

and available power gain Gav = f (Zs)
Ie = 30 rnA, VCE = 8 V, f= 800 MHz
-jSO
484 Siemens
BFP93A
Power gain Gms• 15",.1 2 = f (Iel Power gain Gms• 15",.1 2 =f (lc)
VCE = 8V, f= 200 MHz, Zo = 50 Q VCE = 8 V, f= 500 MHz, Zo = 50 Q
dB dB
30 30
I--- 6ms
V
i--'
1/ ./
~~ I
~
S21.1 2 6ms ---
, 7 7
V
J-,k::: ---
7
IS21_1 2
I
10 10
(j -ls
21'1-
m'-I SUjl_ I
IsUi 1--
6 ms = S210
o
o 10 20 30 40 rnA 10 20 30 40 rnA
Power gain Gma• Gms• 15",.1 2 = f (Iel Power gain Gma • 15",.12 = f (Iel
VCE = 8 V, f=800 MHz, 20 =50 Q VCE = 8 V, f = 1.5 GHz, Zo = 50 Q
dB dB
30 30
6m•
6ms
~~ ·=I
6m S21-I·[k_
S12_
A2_1') -
IS2101 2
t 6 ms
20 I--- .;>i--
6 ma I---
I
I ~
6 m•
V .....
IS2101 2
10 -[
7 I
I I
I
10 ,.
I--- I-- - / ' I--
IS21_1
I---I--- (jms- -S21-1
S12_
-I -
/
I--- - 6 m• ~IS21_1'[k -Jk 2-1') -
~ - S120 -
10 20 30 40 rnA 10 20 30 40 rnA
Siemens 485
BFP93A
Power gain Gma , Gms, 1~1e12 = f (f) Power gain Gma , Gms , 1~1e12 = f (f)
Ic = 5 mA, VcE =8V, ~ = 50 0 Ie = 10mA, VeE=8V,~=500
dB dB
30 30
f'.-. I
~
"- ~ms " ~ms
I--..
........
~
........ " ""-
_I S21.1 2
.....
f---IS21,1 2 I'..
, \
,
...
~ma
'\.
'\ \6ma
10 10
\ ~ '\ \.
-I
6 ms- -S21',
S12,
\
_
IS12.
f- 6ms = S21', .
\
"\
6m'=I~I'(k-Jk2 -1') \ I- 6ma = IS21·I·(k-!k2_1')
S12e
o
2 3 GHz
o
0.1 0.5 0.1 0.5 2 3 GHz
-f -f
Power gain Gma , Gms , 1~1.12 = f (f) Power gain Gma , Gms , 1~1eI2=f(f)
Ic= 20 mA, VCE = 8 V, Zo= 500 Ie =30 mA, VCE = 8 V, Zo= 50 0
dB dB
30
,,,,- II
30
1"\. . . . I
6ms
"\.. "\.. ,,6ms
'\.
I 6ma
6ms
'\.
"
IS21.\2 '\. "-
IS21l
- ls21i
t 20 ,;
6ma -
\ \ 6ma -
'\ .
\\
10 \ 10
\
\ '\ \ '\
I- 6ms =IS21'I f- 6ms = IS21·1
l-
S12, '\ I- S12. \
I- 6m'=1~21'1'(k_&:1) I- 6ma=I~I'(k-N-l')
I 12. I I I I I II I S12. , II
o0.1 o0.1 0.5 2 3 GHz
0.5 2 3 GHz
-f -f
486 Siemens
BFP93A
Common Emitter S Parameters

Ic = 10 rnA, VCE = 3 V. Zo = 50 n
f 5 11 ~1 512 ~2
0.10 0.669 - 66.5 21.87 142.0 0.027 61.1 0.820 - 28.4
0.15 0.638 - 89.6 18.34 129.5 0.034 52.6 0.705 - 36.3
0.20 0.619 -106.6 15.41 120.3 0.039 47.7 0.612 - 41.2
0.25 0.606 -118.7 13.08 113.8 0.043 44.6 0.546 - 44.3
0.30 0.613 -127.6 11.38 109.3 0.047 41.5 0.502 - 47.1
0.40 0.636 -145.7 9.21 100.5 0.050 36.3 0.412 - 51.8
0.50 0.619 -157.9 7.51 93.5 0.051 37.3 0.359 - 52.1
0.60 0.609 -166.3 6.31 88.1 0.054 39.0 0.330 - 52.2
0.70 0.602 -172.9 5.43 83.6 0.059 40.8 0.314 - 52.5
0.80 0.604 -177.0 4.78 80.1 0.065 40.3 0.308 - 54.1
0.90 0.627 177.4 4.31 76.4 0.066 38.2 0.292 - 57.0
1.00 0.631 171.4 3.89 72.4 0.067 40.3 0.278 - 57.7
1.20 0.632 162.5 3.24 65.9 0.075 43.1 0.268 - 60.6
1.40 0.641 155.3 2.80 60.2 0.082 42.7 0.262 - 65.8
1.50 0.641 151.4 2.62 57.3 0.085 43.8 0.261 - 67.4
1.60 0.647 148.3 2.47 54.2 0.089 44.2 0.264 - 69.6
1.80 0.653 141.4 2.20 48.4 0.097 44.2 0.267 - 73.9
2.00 0.664 136.0 1.97 42.9 0.105 43.9 0.267 - 78.7
2.50 0.708 123.4 1.57 31.1 0.124 42.9 0.275 - 95.3
3.00 0.721 111.6 1.29 18.7 0.144 40.4 0.301 -107.7
Siemens 487
BFP93A
Ic = 30 mA, VCE = 3 V, Zo = 50 n
f 8 11 5.21 8 12 5.22

0.10 0.527 -104.9 32.22 127.4 0.019 55.0 0.636 - 43.7
0.15 0.536 -126.7 24.42 115.7 0.023 50.7 0.498 - 51.3
0.20 0.543 -139.7 19.32 108.3 0.027 50.1 0.412 - 55.1
0.25 0.548 -147.4 15.85 103.6 0.030 49.5 0.362 - 57.4
0.30 0.570 -152.2 13.55 100.5 0.034 47.2 0.333 - 60.9
0.40 0.616 -165.9 10.71 93.4 0.035 46.0 0.255 - 67.8
0.50 0.603 -174.8 8.60 87.8 0.039 51.1 0.214 - 66.9
0.60 0.596 179.3 7.16 83.5 0.044 54.4 0.196 - 66.2
0.70 0.590 175.0 6.14 79.9 0.051 55.8 0.189 - 66.1
0.80 0.592 172.6 5.38 77.1 0.058 53.6 0.190 - 68.6
0.90 0.620 168.4 4.85 73.8 0.059 52.0 0.178 - 74.0
1.00 0.625 163.1 4.37 70.3 0.062 54.6 0.165 - 74.7
1.20 0.626 155.9 3.62 64.6 0.074 55.7 0.161 - 77.8
1.40 0.637 149.7 3.13 59.5 0.083 53.7 0.160 - 84.9
1.50 0.637 146.3 2.93 56.7 0.088 54.2 0.160 - 86.3
1.60 0.645 143.4 2.75 54.0 0.093 53.9 0.164 - 88.3
1.80 0.647 137.3 2.45 48.5 0.103 52.4 0.170 - 92.6
2.00 0.658 132.7 2.19 43.4 0.112 50.6 0.174 - 98.0
2.50 0.706 121.1 1.75 32.3 0.134 47.0 0.193 -116.0
3.00 0.717 109.8 1.44 20.5 0.155 42.5 0.222 -126.6
488 Siemens
BFP93A
Ic = 10 rnA, VCE = 5 V, Zo = 50 Q
f Bt1 S:!1 $12 S:!2
0.10 0.686 - 62.1 21.91 143.6 0.025 62.5 0.838 -25.8
0.15 0.649 - 84.6 18.59 131.2 0.032 54.0 0.730 -33.1
0.20 0.624 -101.6 15.74 121.9 0.037 49.1 0.641 -37.6
0.25 0.606 -113.9 13.44 115.3 0.041 45.7 0.577 -40.4
0.30 0.611 -123.2 11.73 110.7 0.045 42.6 0.533 -43.0
0.40 0.628 -142.1 9.54 101.8 0.048 37.3 0.443 -47.1
0.50 0.608 -154.7 7.80 94.6 0.050 37.9 0.390 -47.2
0.60 0.597 -163.6 6.56 89.2 0.053 39.5 0.362 -47.1
0.70 0.588 -170.5 5.65 84.6 0.057 41.1 0.346 -47.2
0.80 0.591 -174.8 4.97 81.0 0.063 40.7 0.339 -48.7
0.90 0.614 179.4 4.50 77.3 0.064 38.7 0.322 -51.3
1.00 0.617 173.0 4.06 73.3 0.065 40.6 0.308 -51.7
1.20 0.618 163.9 3.38 66.8 0.072 43.4 0.298 -54.3
1.40 0.627 156.4 2.92 61.0 0.079 43.1 0.291 -59.0
1.50 0.628 152.4 2.73 58.1 0.082 44.3 0.290 -£0.6
1.60 0.635 149.4 2.57 55.1 0.086 44.7 0.292 -£2.6
1.80 0.638 142.4 2.29 49.3 0.094 44.9 0.294 -£6.8
2.00 0.650 136.8 2.06 43.7 0.100 44.6 0.294 -71.2
2.50 0.698 124.2 1.63 31.8 0.120 43.8 0.295 -86.9
3.00 0.710 112.0 1.35 19.4 0.139 41.6 0.317 -99.3
S",~=f(f) =
S,2, S:!, f (f)
le= 10 rnA, VeE = 5 V, 20= 50 n le=10mA, VeE=5V,Zo=50n
90·
180· o
-j50 -900
Siemens 489
BFP93A
Ic = 30 rnA, VCE = 5 V, Zo = 50 Q
f $11 Szl 8,2 Sz2
0.10 0.544 - 95.7 32.88 129.4 0.019 56.3 0.667 - 39.4
0.15 0.536 -118.5 25.24 117.5 0.023 51.3 0.532 - 46.3
0.20 0.533 -132.7 20.09 109.9 0.026 50.3 0.445 - 49.4
0.25 0.534 -141.3 16.54 105.0 0.030 49.7 0.394 - 51.3
0.30 0.554 -147.0 14.17 101.8 0.033 47.3 0.363 - 54.1
0.40 0.596 -162.1 11.25 94.5 0.035 45.8 0.283 - 59.1
0.50 0.581 -171.7 9.04 88.7 0.038 50.4 0.242 - 57.3
0.60 0.573 -178.1 7.53 84.3 0.043 53.7 0.225 - 56.1
0.70 0.566 177.2 6.45 80.7 0.050 55.2 0.218 - 55.7
0.80 0.570 174.8 5.66 77.8 0.057 53.3 0.218 - 58.2
0.90 0.598 170.2 5.11 74.5 0.058 51.7 0.203 - 62.4
1.00 0.603 164.8 4.61 71.0 0.061 54.1 0.191 - 62.4
1.20 0.603 157.3 3.82 65.2 0.072 55.4 0.186 - 64.9
1.40 0.615 151.0 3.30 60.2 0.081 53.5 0.182 - 71.1
1.50 0.616 147.4 3.08 57.4 0.085 54.1 0.182 - 72.4
1.60 0.622 144.6 2.90 54.7 0.090 53.8 0.185 - 74.6
1.80 0.625 138.5 2.58 49.3 0.100 52.3 0.19Q - 79.0
2.00 0.640 133.5 2.31 44.1 0.109 50.8 0.191 - 84.1
2.50 0.687 121.8 1.84 32.9 0.130 47.3 0.200 -102.2
3.00 0.700 110.4 1.52 21.1 0.150 43.0 0.225 -113.9
~,,~=f(f) ~2' S:!, = f (f)

Ic =30 rnA, VCE = 5 V, Zo = 50 n Ic = 30 rnA, VCE = 5 V, Zo = 50 n
180· o
-90·
490 Siemens
BFP93A
Ic = 5 mAo VCE = 8 V. Zo = 50 n
f 8 11 ~, 8 '2 ~2
0.10 0.811 - 43.1 13.94 152.9 0.027 68.3 0.922 -16.4
0.15 0.771 - 61.5 12.68 141.8 0.037 59.7 0.856 -22.3
0.20 0.735 - 77.3 11.34 132.5 0.045 53.4 0.789 -26.7
0.25 0.703 - 90.2 10.09 125.2 0.051 48.5 0.733 -29.8
0.30 0.691 -100.7 9.03 119.6 0.056 44.2 0.689 -32.3
0.40 0.679 -121.1 7.58 109.4 0.061 36.6 0.605 -36.2
0.50 0.649 -135.9 6.35 101.0 0.063 33.5 0.550 -37.4
0.60 0.631 -147.1 5.41 94.5 0.066 32.2 0.515 -38.3
0.70 0.618 -156.0 4.71 89.0 0.068 32.1 0.494 -39.2
0.80 0.617 -162.2 4.17 84.6 0.072 31.4 0.483 -40.4
0.90 0.633 -169.4 3.78 80.3 0.073 28.8 0.465 -42.5
1.00 0.633 -176.7 3.43 75.8 0.073 29.4 0.451 -43.4
1.20 0.631 172.4 2.86 68.3 0.076 31.4 0.438 -46.3
1.40 0.636 163.5 2.48 61.9 0.080 31.6 0.428 -50.5
1.50 0.637 159.0 2.32 58.6 0.081 32.9 0.426 -52.2
1.60 0.644 155.4 2.19 55.4 0.083 33.9 0.427 -54.3
1.80 0.647 147.7 1.95 49.1 0.088 35.3 0.428 -58.3
2.00 0.658 141.2 1.75 43.2 0.092 36.5 0.426 --62.5
2.50 0.704 127.1 1.39 30.3 0.106 39.5 0.423 -76.8
3.00 0.720 114.2 1.14 17.6 0.123 40.2 0.442 -89.3
5 11 .502=f(f) 5 ,2• 5.!, = f (f)

Ie = 5 mA, VeE = 8 V,zo= 50 Q Ie = 5 mA, VeE = 8 V, Zo = 50 Q
900
1800 o
_90 0
Siemens 491
BFP93A
Ic = 10 mA, VCE = 8 V, Zo = 50 Q
f S" $" S'2 $,2
0.10 0.709 - 58.1 21.68 145.0 0.024 63.4 0.853 -23.8
0.15 0.668 - 80.0 18.62 132.6 0.031 54.8 0.750 -30.9
0.20 0.635 - 97.3 15.93 123.3 0.036 49.6 0.662 -35.3
0.25 0.605 -110.8 13.65 116.0 0.040 46.4 0.593 -37.8
0.30 0.584 -120.3 11.81 110.6 0.043 44.7 0.546 -39.0
0.40 0.612 -137.3 9.62 102.9 0.047 38.7 0.471 -43.1
0.50 0.588 -150.5 7.90 95.5 0.050 39.4 0.418 -43.1
0.60 0.574 -159.8 6.66 90.0 0.053 40.6 0.390 -43.0
0.70 0.566 -167.3 5.74 85.4 0.057 42.0 0.374 -43.3
0.80 0.566 -171.8 5.06 81.8 0.062 41.7 0.368 -44.8
0.90 0.593 -177.7 4.58 78.0 0.063 39.9 0.349 -46.8
1.00 0.591 175.9 4.13 73.9 0.065 41.7 0.336 -47.3
1.20 0.594 166.9 3.44 67.5 0.072 44.0 0.324 -49.6
1.40 0.601 159.3 2.98 61.7 0.079 43.9 0.315 -54.0
1.50 0.602 155.3 2.79 58.8 0.082 44.7 0.314 -55.7
1.60 0.605 151.8 2.62 55.7 0.086 45.3 0.315 -57.7
1.80 0.614 145.1 2.33 49.9 0.094 45.5 0.316 -61.7
2.00 0.626 139.4 2.09 44.5 0.100 45.3 0.314 -66.1
2.50 0.675 126.7 1.67 32.2 0.120 44.6 0.310 -81.5
3.00 0.690 114.1 1.38 20.3 0.139 42.3 0.327 -94.0
s",~=f(tl S,2, 5" = f (tl

Ic=10mA, VCE=8V,Zo=50Q Ic=10mA, VCE=BV,Zo=50Q
90·
- j50 -90·
492 Siemens
BFP93A
Ic = 20 rnA, VCE = 8 V, 20 = 50 f.l

f 8" ~, 8'2 ~2
0.10 0.617 - 76.1 29.26 136.3 0.021 59.2 0.755 - 32.3
0.15 0.582 - 99.6 23.50 123.8 0.026 52.2 0.627 - 39.6
0.20 0.560 -115.8 19.20 115.3 0.030 49.3 0.536 - 43.3
0.25 0.550 -126.6 16.03 109.6 0.034 47.9 0.478 - 45.4
0.30 0.562 -134.2 13.84 105.9 0.037 45.2 0.440 - 47.9
0.40 0.591 -151.9 11.11 97.8 0.039 41.9 0.353 - 52.1
0.50 0.571 -163.2 8.99 91.4 0.042 45.4 0.307 - 50.8
0.60 0.562 -170.8 7.51 86.6 0.046 48.1 0.286 - 49.9
0.70 0.553 -176.6 6.44 82.6 0.051 50.0 0.275 - 49.7
0.80 0.557 -179.8 5.66 79.5 0.058 48.8 0.272 - 51.5
0.90 0.583 175.0 5.12 76.0 0.059 47.0 0.255 - 54.6
1.00 0.588 169.0 4.61 72.3 0.062 49.4 0.243 - 54.6
1.20 0.587 160.6 3.83 66.3 0.071 51.3 0.235 - 56.8
1.40 0.601 153.8 3.31 61.1 0.080 49.9 0.229 - 61.9
1.50 0.600 150.0 3.09 58.2 0.083 50.8 0.228 - 63.2
1.60 0.605 147.0 2.91 55.4 0.088 50.7 0.230 - 65.2
1.80 0.610 140.5 2.59 49.9 0.097 49.7 0.233 - 69.3
2.00 0.623 135.3 2.32 44.6 0.105 48.5 0.232 - 74.0
2.50 0.674 123.1 1.85 33.3 0.126 46.0 0.234 - 90.4
3.00 0.688 111.5 1.53 21.3 0.145 42.3 0.255 -102.7
5 11 , 5,,2 = f (f) S,2, 5", = f (f)

Ic=20mA, VCE=BV.Zo=50n Ic = 20 rnA. VCE = B V. Zo = 50 n
+jSO 90 0
0.1
1800
-jSO _90 0
Siemens 493
BFP93A.
Ic = 30 rnA, VCE = 8 V, Zo = 50 n
f 5 11 5:21 512 5:22

0.10 0.578 - 86.6 32.52 131.3 0.019 56.9 0.693 - 36.4
0.15 0.548 -110.0 25.24 119.2 0.024 51.6 0.561 - 43.0
0.20 0.533 -125.2 20.22 111.3 0.027 50.1 0.473 - 45.9
0.25 0.528 -134.6 16.71 106.2 0.031 49.3 0.422 - 47.5
0.30 0.545 -141.3 14.35 103.0 0.034 47.0 0.389 - 50.1
0.40 0.579 -157.7 11.43 95.4 0.035 45.1 0.307 - 54.0
0.50 0.561 -168.2 9.19 89.4 0.039 49.5 0.267 - 52.0
0.60 0.552 -174.9 7.66 84.9 0.044 52.5 0.250 - 50.7
0.70 0.543 -180.0 6.56 81.2 0.050 53.9 0.243 - 50.3
0.80 0.548 177.4 5.76 78.4 0.057 52.2 0.242 - 52.6
0.90 0.576 172.4 5.21 75.0 0.058 50.5 0.226 - 56.0
1.00 0.580 166.7 4.69 71.4 0.061 53.1 0.214 - 55.8
1.20 0.580 158.9 3.89 65.6 0.072 54.3 0.208 - 58.1
1.40 0.592 152.3 3.36 60.4 0.081 52.6 0.203 - 63.7
1.50 0.595 148.6 3.14 57.7 0.085 53.0 0.202 - 65.0
1.60 0.601 145.8 2.96 54.9 0.090 52.7 0.205 - 67.0
1.80 0.605 139.6 2.63 49.5 0.099 51.3 0.209 - 71.4
2.00 0.619 134.5 2.36 44.3 0.108 49.9 0.209 - 76.2
2.50 0.669 122.7 1.88 33.1 0.128 46.6 0.212 - 93.5
3.00 0.684 111.0 1.55 21.1 0.148 42.4 0.235 -105.7
s", Sz. =f (f) S,2. S:z, = f (f)

Ie =30 rnA, VeE = 8\1, Zo = 50 n Ie =30 rnA, VeE = 8\1, Zo = 50 n
+j50 90·
o Q 180· o
-j50 -90·
494 Siemens
NPN Silicon RF Transistor BFP 193
• For low-noise, high-gain amplifiers up to 2 GHz.
B~E
• For linear broadband amplifiers.
• fT = 8 GHz.
F= 1.2 dB at 800 MHz.
E~C
(tape and reel)
BFP 193 RC Q 62702 - F1217 SOT-143
Maximum Ratings
Collector-emitter voltage, VSE = 0 VeEs 20 V
Collector-base voltage Veso 20 V
Total power dissipation, TA ::; 50 °C2) Ptot 400 mW
Thermal Resistance
Junction - ambient 1) RthJA \ ::;250 \KIW
Siemens 495
BFP 193
DC characteristics
min typ max
Collector-emitter breakdown voltage II(SR)CEO 12 - - V
Ic=1 mA,ls=O
Collector-emitter cutoff current ICEs - - 100 J.lA
VcE =20V; VSE=O
Collector-base cutoff current Icso - - 50 nA
Vcs=10V,IE=0
Emitter-base cutoff current I Eso - - 1 J.lA
VES = 1 V; Ic = 0
DC current gain flroE -
lc= 5mA, VCE=8V - 90 -
Ic=30mA, VcE =8V - 100 -
Collector-emitter saturation voltage VCEsat - - 0.4 V
496 Siemens
BFP 193
AC characteristics
min typ max
Transition frequency fr GHz
Ic= 5 mA, VCE = 8 V, f= 500 MHz - 3.5 -
Ic = 30 mA, VCE = 8 V, f= 500 MHz - 8 -
Collector-base capacitance Geb - 0.6 - pF

VCE = 10 V, VBE = vbe = 0, f= 1 MHz

VEB = 0.5 V, Ic = ie = O,f= 1 MHz
Output capacitance Gobs - 0.95 - pF

VcE =10V, VBE =Vbe=0,f=1 MHz
Noise figure F dB
Ic= 5mA, VcE=BV, f= 10 MHz, Zs = 75 n. - O.B -
Ic = 30 mA, VCE = 8 V, f= BOO MHz, Zs = Zsopt - 1.6 -
Ic = 30 mA, VCE = 8 V, f= 1 GHz,Zs=50Q - 1.9 -
Power gain Gpe dB
Ic = 30 mA, VCE = 8 V, f= BOO MHz, - 15 -
Zs = 50 Q, ZL = ZLOPt
Transducer gain l~lel2 - 13.5 - dB
Ic = 30 mA, VCE = B V, f= 1 GHz, Zo = 50 Q
Linear output voltage VOl = Vo2 mV
Ic = 40 mA, VCE = 5 V, diM =60 dB - 250 -
fl = B06 MHz, f2 = 810 MHz, Zs = ZL = 50 Q
Ic = 40 mA, VCE = 5 V, f= BOO MHz
Siemens 497
BFP 193
=
Total power dissipation P,ot f ITAI Transition frequency fT = f (Ie)
Package mounted on"alumina VCE = 8 V, f= 500 MHz
mW GHz
500 r-r-rr-r--,-,,.,.,-,--r-TO-rTO 10
III
400 1-+-+-+-+++-+++-+++-+-+--1
~E=~ I--
--
, ,
6
flot ~ ~ rs'1
~ V' '"
3V
6
4
/
100 H-+--H-+--H-+--H-+-N---t-1 2 I
I
o
o 10 20 30 40 SOmA
----<--lc
Collector-base capacitance Ccb =f (Vea)

VSE=Vbe=0,f=1 MHz
pF
1.0
1\
\
"'I'-- r--.
1 0.5
o
o 20V
498 Siemens
BFP 193

Ie = 10 mA, VeE = 8 V, Zo = 50 Q
f Fmin Gp (Fmin) rapt RN N Fson Gp (Fson)
GHz dB dB MAG lANG Q - dB dB
0.01 1 - (Zs = 75 Q) - - 1.05 -
0.8 1.2 15.4 - - - 1.35 14.4
2.0 2.3 9 - 1= - - 2.8 7
Ie = 30 mA, VeE = 8 V, Zo = 50 Q
f Fmin Gp (Fmin) rapt RN N Fson Gp (Fson)

0.01 1.65 - (Zs = 50 Q) - - 1.65 -
0.8 1.6 16.7 - - - 1.95 15.4
2.0 2.6 9.5 - 1= - - 3.3 7.5
Noise figure F = f (Iel Noise figure F = f (Iel

VCE = 8 V, f= 10 MHz Power gain G = f (Iel
VCE = 8 V, f= 800 MHz, ZLopt (G)
dB dB dB
3 4
I I
m
1/ I I
Zs=1S01l
V 6
i~(- e::=
- 1-
/ Lo--r-- 15
F F 3
L--r--
6
V Zs=S01l,_ f--
2 I
11 7S1l
,. ".
". I
II v( ..- 2 10
Zs =SOil,;;: p~:::::
I ~~ ~\ F ,....
I b ~I
~;... """1.1 J....H"""
Zsopt
o o o
o 10 20 30mA o 10 20 30mA
- - - I.... Ie
Siemens 499
BFP 193

Power gain Gms• 1S:!1.12 =f (Ie) Power gain Gm •• 1S:!1.12 =f (Ie)
VcE =8V, f=200MHz,~=50Q VCE = 8 V, f= 500 MHz, ~ = 50 Q
dB dB
30 30
- .1 l-t-
um~ I,
A- ums
ZV
/
IS 21.1 2
/
/'
,.,. -
20
I---'" IS21el2
1 u ms I
=S2Ie,-
l"- t--
SI2e
10 10
ums =,S21e
o
SI2e
-1-
r
o o
o 10 20 30 40 SOmA o 10 20 30 40 SOmA
- - - - <.... Ie ----<.... Ie
Power gain G...•• 1S:!1.12 =f (Ie) Power gain Gms• 1S:!1.12 =f (Ic)
VCE = 8 V, f = 800 MHz, ~ = 50 Q VCE = 8 V, f= 1.5 GHz, ~ = 50 Q
dB dB
30 20
Ums Um.
"
1 10
" IS21eI 2
I /
",
1~21~IZ
10
I
S2Ie,-
lims = - _
-
- t-- t- um
I I
.= ISZlellk_hz_11 '--
SlZe'l
I i ,SIZt J
o o
o 10 20 30 40 SOmA o 10 20 30 40 50 rnA
.. Ie
500 Siemens
BFP 193
Power gain Gma • Gms • 15",.1 2 = f (f) Power gain Gm .. Gms• 15",.1 2 = f (tl
Ic=5mA, VcE =8V,Zo=50Q Ic=10mA, VcE =8\1,Zo=50Q
dB dB
30 30
" "-
.......................
""
r--... I'-..
~~
I'\.
6ms
~
\. f"-
I\,
1\
6
i'.
ms
~ " 1'\
IS 21.1 2
1
"" 6ma ISzl.I Z \6ma
\. '\.
10
ms !5,5212 ••1
I--- 6 =
I
"\.\. "\ 10
- 6ms =!SZ1. 1 \. '\
I-- C- S12.
o
~6ma~I~~~: 1(lk-Jr~111)1
0.1 0.5
'\
235Hz
o
: 6ma ~ I~~~: 1~ kl~~WI
0.1 0,5
"
2 3 GHz
---- f ---- f
Power gain Gma • Gms • 15",.1 2 = f (f) Power gain Gma • Gms• 15",.1 2 = f (tl
Ic = 20 mA, VeE = 8 V, Zo = 50 Q Ic = 40 mA, VCE = 8 V, Zo = 50 Q
dB dB
30 30
~" r-..,. 11'\.
'\ .""-. 1\. l\.
r\: 1'\ \ 1\.
,. , 6ms l' 6ms
I\. 1\
f\
" l\ 1\
1521.1 2 ISZll r-..

\. 6ma _ \. 6ma _
I\. \. I\, \
10
\. I\. 10
\. I\.
'\ \
f- 6m,=15 z1 .1
I - - - 5,2 • f\. I--
6ms=I S
f-- Z1·1
S12. \.
\
I- 6 =15 z1 •!(k-.fK2=1) f-6rna =IS
s
rna ' 5Z1·I(k-h 2-1l 'I
o
1----1 '~. I III o
1--1'21.1 11111
0.1 0.5 235Hz 0.1 0.5 235Hz
-f -f
Siemens 501
BFP 193

Ic= 10 rnA, VCE = 3 V, Zo = 50 n
f 5 11 5.!1 ~2 5.!2
0.10 0.673 - 68.6 22.95 143.4 0.029 60.3 0.820 - 32.7
0.15 0.665 - 92.3 19.44 130.9 0.037 51.4 0.701 - 43.2
0.20 0.660 -109.9 16.49 121.6 0.042 45.5 0.602 - 50.6
0.25 0.650 -123.2 14.07 114.5 0.046 41.9 0.524 - 55.9
0.30 0.645 -132.9 12.18 109.1 0.049 39.8 0.465 - 59.5
0.40 0.666 -146.1 9.65 101.8 0.054 35.3 0.392 - 66.5
0.50 0.669 -158.2 7.98 94.9 0.055 34.2 0.329 - 71.0
0.60 0.663 -166.6 6.74 89.6 0.058 35.3 0.291 - 73.1
0.70 0.658 -173.4 5.81 85.1 0.061 36.6 0.268 - 75.0
0.80 0.657 -178.1 5.11 81.2 0.066 36.9 0.257 - 76.8
0.90 0.676 177.6 4.59 77.9 0.069 34.9 0.246 - 81.2
1.00 0.684 172.2 4.15 74.1 0.069 35.8 0.229 - 83.8
1.20 0.687 163.7 3.45 68.0 0.075 38.6 0.213 - 87.6
1.40 0.692 156.8 2.98 62.7 0.081 38.6 0.210 - 93.7
1.50 0.692 153.2 2.79 59.8 0.084 39.5 0.210 - 95.6
1.60 0.696 149.9 2.62 56.8 0.087 40.2 0.212 - 97.8
1.80 0.703 143.4 2.34 51.1 0.095 40.6 0.216 -101.4
2.00 0.714 138.0 2.09 45.9 0.101 40.5 0.219 -106.2
2.50 0.758 126.1 1.66 34.4 0.118 40.5 0.240 -122.1
3.00 0.763 113.6 1.38 23.1 0.136 38.6 0.269 -131.3
502 Siemens
BFP 193
Ic = 30 mA, VCE = 3 V, 4J = 50 n
f 8 11 ~1 8 12 ~2
0.10 0.545 -113.4 35.23 128.3 0.020 53.9 0.631 - 54.0
0.15 0.585 -133.8 26.85 116.3 0.023 48.8 0.488 - 66.8
0.20 0.605 -146.4 21.33 108.7 0.026 47.8 0.396 - 75.5
0.25 0.611 -154.9 17.49 103.3 0.029 48.1 0.336 - 81.9
0.30 0.613 -160.5 14.77 99.5 0.032 49.0 0.294 - 86.3
0.40 0.648 -167.4 11.44 94.5 0.037 46.4 0.259 - 96.9
0.50 0.658 -176.1 9.32 89.0 0.039 50.2 0.215 -105.7
0.60 0.653 178.1 7.79 84.8 0.044 53.4 0.191 -109.5
0.70 0.649 173.6 6.67 81.2 0.050 54.9 0.179 -112.5
0.80 0.647 170.4 5.85 78.1 0.057 54.2 0.178 -114.4
0.90 0.668 167.6 5.24 75.5 0.060 51.6 0.181 -120.8
1.00 0.676 163.1 4.73 72.2 0.063 53.5 0.172 -126.1
1.20 0.680 156.3 3.93 67.0 0.073 54.9 0.165 -131.4
1.40 0.687 150.5 3.39 62.4 0.082 53.2 0.172 -137.3
1.50 0.686 147.1 3.18 59.7 0.087 53.3 0.173 -138.6
1.60 0.691 144.3 2.98 57.1 0.092 53.3 0.176 -139.8
1.80 0.697 138.6 2.66 51.9 0.102 51.8 0.181 -142.0
2.00 0.707 133.8 2.37 47.1 0.111 50.2 0.189 -145.9
2.50 0.748 123.0 1.89 36.8 0.132 46.5 0.222 -157.1
3.00 0.754 111.2 1.57 25.9 0.153 41.9 0.246 -162.1
Siemens 503
BFP 193
Ic = 5 rnA, VCE = 5 V, Zo = 50 Q
f 8 11 8.!1 8 12 8.!2

0.10 0.796 - 46.6 14.63 153.0 0.033 67.0 0.911 - 20.5
0.15 0.772 - 66.3 13.32 141.9 0.044 58.1 0.837 - 28.4
0.20 0.751 - 82.9 11.95 132.5 0.053 51.0 0.759 - 34.6
0.25 0.727 - 96.7 10.64 124.8 0.060 45.5 0.692 - 39.2
0.30 0.708 -107.6 9.46 118.7 0.065 41.5 0.636 - 42.4
0.40 0.717 -125.9 7.86 109.3 0.071 33.7 0.547 - 48.5
0.50 0.699 -140.1 6.58 101.3 0.074 30.2 0.483 - 51.4
0.60 0.690 -150.6 5.61 94.9 0.076 28.1 0.440 - 53.4
0.70 0.682 -159.2 4.89 89.5 0.078 27.2 0.411 - 55.0
0.80 0.681 -165.1 4.32 85.2 0.082 26.3 0.394 - 56.8
0.90 0.695 -171.5 3.91 81.0 0.082 23.8 0.375 - 59.3
1.00 0.700 -178.1 3.54 76.7 0.082 23.7 0.359 - 60.7
1.20 0.699 171.6 2.96 69.5 0.084 24.8 0.342 - 64.2
1.40 0.707 163.5 2.56 63.4 0.086 24.3 0.333 - 68.8
1.50 0.707 159.4 2.39 60.4 0.086 25.7 0.332 - 70.7
1.60 0.713 155.8 2.26 57.2 0.087 26.6 0.332 - 72.7
1.80 0.715 148.4 2.01 51.1 0.090 28.0 0.335 - 76.9
2.00 0.726 142.1 1.80 45.2 0.093 29.3 0.336 - 81.1
2.50 0.764 128.7 1.43 33.2 0.103 33.9 0.349 - 95.9
3.00 0.776 116.2 1.17 21.0 0.117 36.5 0.376 -106.7
5,1. Sn = f (f) =
5,2.5,,1 f (f)
Ie = 5 rnA, VeE = 5 V. Zo =50n Ie = 5 mA, VeE = 5 V. 2'0= 50 n
90 0
-j50 -90 0
504 Siemens
BFP 193
Ic = 10 mA, VCE = 5 V. Zo = 50 Q
f 8 11 8.21 8 12 8.22

0.10 0.690 - 65.1 22.92 144.7 0.028 61.6 0.833 - 30.9
0.15 0.675 - 88.5 19.63 132.3 0.037 52.4 0.719 -41.1
0.20 0.664 -106.2 16.74 122.8 0.042 46.6 0.619 - 48.4
0.25 0.651 -119.4 14.33 115.7 0.046 43.0 0.544 - 53.4
0.30 0.639 -128.8 12.39 110.5 0.049 40.8 0.488 - 56.7
0.40 0.674 -144.6 9.99 102.6 0.053 35.1 0.403 - 64.5
0.50 0.661 -156.5 8.19 95.7 0.055 35.0 0.343 - 67.5
0.60 0.656 -165.1 6.90 90.4 0.058 35.9 0.307 - 69.6
0.70 0.650 -171.7 5.96 86.0 0.062 36.9 0.284 - 71.2
0.80 0.649 -176.1 5.24 82.4 0.067 36.7 0.274 - 73.4
0.90 0.670 178.8 4.73 78.9 0.068 35.1 0.258 - 77.3
1.00 0.675 173.2 4.27 75.0 0.069 36.5 0.242 - 79.0
1.20 0.677 164.3 3.55 68.8 0.075 38.8 0.231 - 82.9
1.40 0.688 157.3 3.07 63.5 0.081 38.5 0.225 - 88.4
1.50 0.688 153.6 2.87 60.7 0.084 39.9 0.224 - 90.1
1.60 0.695 150.5 2.71 57.8 0.087 40.4 0.226 - 92.1
1.80 0.696 143.6 2.41 52.3 0.094 40.9 0.231 - 95.8
2.00 0.705 138.1 2.16 46.9 0.100 40.8 0.233 -100.2
2.50 0.747 125.8 1.71 35.9 0.117 41.0 0.253 -114.9
3.00 0.755 114.1 1.41 24.3 0.134 39.5 0.280 -123.8
S",~=f(f) S,2. $." = f If)

Ic= 10 mA, VCE = 5 V. Zo = 50n Ic=10mA, VcE =5V,Zo=50n
+j50 90°
-j 50
Siemens 505
BFP 193
Ic = 30 mA, VCE = 5 V. Zo = 50 n
f S11 Sz, S'2 Sz2
0.10 0.556 -106.4 36.18 129.6 0.020 54.6 0.648 - 51.6
0.15 0.581 -128.5 27.79 117.6 0.024 49.1 0.506 - 64.3
0.20 0.595 -142.1 22.15 109.7 0.027 47.9 0.411 - 72.7
0.25 0.597 -151.0 18.19 104.3 0.029 48.3 0.349 - 78.3
0.30 0.595 -156.4 15.32 100.6 0.033 48.9 0.312 - 81.9
0.40 0.651 -166.5 12.09 94.8 0.035 46.2 0.260 - 95.6
0.50 0.640 -174.8 9.73 89.5 0.039 50.7 0.217 -100.6
0.60 0.636 179.5 ~ 8.11 85.5 0.045 53.4 0.195 -104.4
0.70 0.633 174.9 6.97 82.0 0.051 54.7 0.184 -106.9
0.80 0.630 172.4 6.10 79.2 0.057 53.3 0.185 -109.5
0.90 0.655 168.6 5.50 76.3 0.059 51.9 0.182 -116.4
1.00 0.662 163.9 4.95 73.0 0.063 53.9 0.172 -120.0
1.20 0.664 156.8 4.11 67.7 0.074 54.8 0.169 -124.6
1.40 0.676 150.9 3.54 63.3 0.082 53.1 0.174 -130.9
1.50 0.676 147.6 3.32 60.8 0.087 53.6 0.174 -132.0
1.60 0.682 144.7 3.12 58.1 0.092 53.3 0.177 -133.4
1.80 0.683 138.8 2.78 53.1 0.102 51.8 0.184 -135.5
2.00 0.693 133.8 2.49 48.1 0.111 50.1 0.189 -139.3
2.50 0.733 122.8 1.97 38.2 0.132 46.8 0.221 -150.2
3.00 0.744 111.6 1.63 27.4 0.152 42.5 0.244 -155.3
S11,~=f(f) 5,2, So, = f (f)

Ie =30 rnA, VeE = 5 V. Zo = 50 n Ie = 30 rnA, VeE = 5 V, Zo = 50 n
+j50 90 0
-j50 -90 0
506 Siemens
BFP 193
Ic = 50 rnA, VCE = 5 V. Zo = 50 n
f Sl1 ~, S'2 ~2
0.10 0.544 -124.1 39.07 123.8 0.017 53.8 0.560 - 59.8
0.15 0.580 -142.5 28.97 112.6 0.020 50.5 0.425 - 72.7
0.20 0.599 -153.3 22.68 105.5 0.023 51.3 0.341 - 81.3
0.25 0.602 -160.4 18.45 100.8 0.026 52.9 0.290 - 87.0
0.30 0.598 -164.3 15.46 97.7 0.029 53.7 0.262 - 90.5
0.40 0.657 -172.5 12.13 92.5 0.032 51.8 0.225 -106.1
0.50 0.647 -179.8 9.73 87.6 0.036 56.9 0.190 -111.6
0.60 0.643 175.4 8.10 83.9 0.043 59.3 0.174 -115.5
0.70 0.638 171.4 6.95 80.6 0.049 60.1 0.166 -117.8
0.80 0.635 169.3 6.08 78.0 0.056 57.7 0.171 -119.8
0.90 0.661 165.9 5.47 75.2 0.058 56.6 0.172 -126.8
1.00 0.666 161.6 4.93 72.1 0.062 58.5 0.164 -130.6
1.20 0.670 154.8 4.08 66.9 0.074 58.3 0.165 -134.6
1.40 0.682 149.3 3.53 62.6 0.083 56.5 0.172 -139.9
1.50 0.681 146.0 3.30 60.1 0.088 56.6 0.173 -141.1
1.60 0.686 143.3 3.11 57.6 0.093 56.2 0.176 -142.2
1.80 0.688 137.5 2.77 52.6 0.104 54.3 0.184 -143.7
2.00 0.698 132.6 2.47 47.7 0.113 52.3 0.190 -147.1
2.50 0.737 121.9 1.96 38.1 0.135 48.2 0.224 -156.6
3.00 0.746 111.0 1.63 27.2 0.155 43.5 0.246 -160.9
5". Sz, = f If) 5,2,5.!, =f If)

Ie =50 rnA, VeE = 5 V, Zo = 50 0 Ie = 50 rnA, VeE = 5 V, Zo = 500
+j50
-j50
Siemens 507
BFP 193
Ic = 5 rnA, VCE = 8 V, Zo = 50 n
f $" ~, $'2 ~2
0.10 0.808 - 44.9 14.57 153.6 0.032 67.7 0.914 - 19.8
0.15 0.782 - 64.1 13.32 142.7 0.044 58.9 0.843 - 27.5
0.20 0.758 - 80.6 12.01 133.4 0.053 51.7 0.768 - 33.6
0.25 0.733 - 94.1 10.74 125.8 0.059 46.2 0.703 - 38.2
0.30 0.712 -105.1 9.56 119.5 0.064 42.2 0.647 - 41.5
0.40 0.718 -123.7 7.96 110.2 0.071 34.4 0.558 - 47.6
0.50 0.698 -138.0 6.68 102.1 0.074 30.7 0.493 - 50.5
0.60 0.687 -148.9 5.71 95.7 0.076 28.6 0.449 - 52.6
0.70 0.678 -157.6 4.98 90.3 0.078 27.4 0.420 - 54.1
0.80 0.676 -163.7 4.41 85.8 0.082 26.5 0.403 - 55.8
0.90 0.691 -170.2 3.99 81.7 0.083 24.0 0.383 - 58.3
1.00 0.694 -176.8 3.62 77.3 0.082 23.8 0.366 - 59.7
1.20 0.694 172.7 3.02 70.0 0.084 24.7 0.348 - 63.1
1.40 0.702 164.3 2.61 64.0 0.086 24.4 0.338 - 67.6
1.50 0.700 160.3 2.44 60.9 0.086 25.6 0.337 - 69.4
1.60 0.709 156.6 2.30 57.7 0.087 26.4 0.337 - 71.4
1.80 0.708 149.0 2.06 51.7 0.090 27.8 0.340 - 75.5
2.00 0.721 142.8 1.84 45.8 0.092 29.0 0.339 - 79.7
2.50 0.759 129.4 1.46 33.7 0.102 33.5 0.351 - 94.2
3.00 0.772 116.6 1.19 21.6 0.116 36.1 0.376 -105.0
S11,~=f(f) 5,2, 5:2, = f (f)

Ic = 5 rnA, VCE = 8 V, Zo = 50 Q Ic = 5 mA, VCE = 8 V, Zo = 50 Q
+j50 90°
-j50 -90 0
508 Siemens
BFP 193
Ic = 10 rnA, VCE = 8 V, Zo = 50 n
f 8 11 &.!, 8 12 &.!2

0.10 0.707 - 62.3 23.03 145.5 0.028 62.2 0.838 - 30.0
0.15 0.686 - 85.3 19.82 133.2 0.036 53.2 0.729 - 40.1
0.20 0.669 -103.0 16.98 123.8 0.042 47.3 0.631 - 47.4
0.25 0.653 -116.4 14.59 116.6 0.046 43.5 0.554 - 52.4
0.30 0.639 -126.0 12.63 111.3 0.049 41.3 0.498 - 55.7
0.40 0.670 -142.3 10.22 103.3 0.054 35.5 0.412 - 63.6
0.50 0.656 -154.4 8.39 96.3 0.056 35.3 0.351 - 66.6
0.60 0.648 -163.3 7.08 91.0 0.058 35.9 0.313 - 68.7
0.70 0.643 -170.3 6.12 86.5 0.062 36.9 0.290 - 70.3
0.80 0.642 -174.7 5.38 83.0 0.067 36.7 0.279 - 72.5
0.90 0.662 180.0 4.85 79.4 0.068 34.8 0.262 - 76.4
1.00 0.669 174.3 4.39 75.6 0.069 36.3 0.246 - 78.0
1.20 0.669 165.2 3.65 69.3 0.076 38.6 0.233 - 81.8
1.40 0.679 158.2 3.15 64.0 0.081 38.1 0.226 - 87.2
1.50 0.679 154.3 2.95 61.2 0.084 39.6 0.225 - 88.9
1.60 0.685 151.1 2.78 58.4 0.087 40.0 0.226 - 90.8
1.80 0.687 144.3 2.47 52.9 0.094 40.5 0.231 - 94.6
2.00 0.698 138.7 2.22 47.4 0.100 40.4 0.232 - 98.8
2.50 0.739 126.2 1.76 36.5 0.117 40.6 0.250 -113.6
3.00 0.748 114.3 1.45 24.9 0.134 39.2 0.276 -122.5
5, .. s"" = f If) =
5,2, 5", f If)
Ie = 10 mA. VeE = 8 V, Zo = 50 Q Ie = 10 mA. VeE = 8 V, Zo =50 Q
90 0
-j50 -900
Siemens 509
BFP 193
Ic = 20 rnA, VCE = 8 V, 2Q = 50 Q
f 8 11 ~, 8'2 ~2
0.10 0.607 - 85.2 32.08 136.1 0.023 57.0 0.731 - 42.7
0.15 0.607 -109.4 25.79 123.6 0.029 49.5 0.592 - 54.6
0.20 0.609 -125.7 21.10 114.9 0.032 46.1 0.492 - 62.7
0.25 0.604 -137.3 17.60 108.7 0.035 44.7 0.419 - 68.5
0.30 0.600 -145.4 15.00 104.2 0.038 44.4 0.367 - 72.3
0.40 0.630 -155.3 11.73 98.4 0.043 41.3 0.315 - 81.2
0.50 0.637 -166.5 9.64 92.2 0.044 42.9 0.256 - 88.1
0.60 0.630 -173.8 8.08 87.6 0.048 45.6 0.225 - 91.0
0.70 0.624 -179.5 6.94 83.6 0.053 47.5 0.207 . - 93.4
0.80 0.622 176.6 6.09 80.3 0.059 47.6 0.201 - 95.5
0.90 0.645 173.3 5.46 77.6 0.062 45.1 0.197 -101.7
1.00 0.654 168.0 4.94 74.0 0.064 46.7 0.182 -106.2
1.20 0.657 160.2 4.10 68.5 0.074 49.0 0.169 -111.1
1.40 0.663 153.9 3.54 63.7 0.081 47.8 0.170 -117.9
1.50 0.664 150.4 3.31 61.1 0.085 48.3 0.170 -119.5
1.60 0.666 147.3 3.11 58.4 0.090 48.6 0.173 -121.4
1.80 0.675 141.2 2.77 53.1 0.099 47.8 0.176 -124.2
2.00 0.684 136.1 2.48 48.2 0.107 46.6 0.181 -128.9
2.50 0.731 124.7 1.97 37.7 0.127 44.1 0.207 -143.0
3.00 0.735 112.7 1.64 26.7 0.146 40.4 0.232 -149.6
S,,,~=f(f) 5'2, ~, = f (f)

Ie = 20 rnA, VeE = 8 V, Zo = 50 Q Ie = 20 rnA, VeE = 8 V, Zo = 50 Q
90 0
- jSO -90 0
510 Siemens
BFP 193
Ic = 40 rnA, VCE = 8 V. ~ = 50 Q
f' 5 11 5.!1 5 12 5.!2

0.10 0.558 -108.0 38.69 127.7 0.019 53.5 0.614 - 54.7
0.15 0.578 -129.8 29.36 115.9 0.023 49.3 0.473 - 67.6
0.20 0.590 -143.1 23.28 108.3 0.025 48.9 0.383 - 76.2
0.25 0.589 -152.1 19.06 103.1 0.028 49.3 0.324 - 82.5
0.30 0.589 -158.1 16.07 99.4 0.031 50.1 0.284 - 86.9
0.40 0.624 -165.3 12.46 94.6 0.036 47.6 0.254 - 97.8
0.50 0.633 -174.6 10.16 89.1 0.039 51.4 0.208 -107.0
0.60 0.625 179.3 8.49 85.0 0.044 54.6 0.184 -110.8
0.70 0.620 174.6 7.26 81.5 0.050 56.1 0.173 -113.6
0.80 0.616 171.6 6.36 78.6 0.057 55.2 0.173 -115.4
0.90 0.642 168.7 5.71 76.1 0.060 52.4 0.176 -122.4
1.00 0.650 163.9 5.16 72.8 0.063 54.3 0.167 -128.0
1.20 0.654 156.9 4.27 67.7 0.074 55.5 0.159 -133.3
1.40 0.661 151.1 3.70 63.2 0.083 53.6 0.166 -139.5
1.50 0.661 147.7 3.46 60.6 0.088 53.7 0.166 -140.8
1.60 0.665 144.7 3.25 58.0 0.093 53.5 0.169 -142.0
1.80 0.671 139.1 2.89 52.9 0.103 51.8 0.174 -144.1
2.00 0.681 134.3 2.58 48.2 0.112 50.2 0.180 -148.0
2.50 0.725 123.3 2.05 38.1 0.133 46.2 0.212 -159.4
3.00 0.732 111.4 1.71 27.4 0.154 41.4 0.234 -164.2
S,h~=f(f) S,2, Sz, = f (f)

Ie = 40 rnA, VeE =8\1, Zo= 500 Ie = 40 mA, VeE = 8V, Zo = 50 0
90 0
-j 50 -900
Siemens 511
NPN Silicon RF Transistor BFQ 17P
• For low-distortion broadband amplifiers up to 900 MHz

at collector currents from 20 to 150 mA.
E

(tape and reel)
BFQ 17P FD Q 62702 - F983 SOT-89
Maximum Ratings
Peak collector current, f?:. 1 MHz ICM 300 mA
Total power dissipation, TA :5 25 DC2 ) Ptot 1 W
Ambient temperature range TA -65 ... +150 DC
Storage temperature range Tstg -65 ... +150 DC
Thermal Resistance
Junction - ambient 1) RthJA :5125 KJW
512 Siemens
BFQ 17P
DC characteristics
min typ max
Collector-emitter breakdown voltage V(SR)CEO 25 - - V
Ic = 10 rnA, Is = 0
Collector-base cutoff current Icso pA
Vcs = 20 V. IE = 0 - - 0.1
Vcs = 20 V. IE = 0, TA = 125°C - - 20
Emitter-base cutoff current I ESO - - 100 nA
VES = 1 V. Ic = 0
DC current gain hFE -
Ic= 50 rnA, VcE =5V 25 - -
Ic = 150 rnA, VCE = 5 V 25 - -
Ic= 100 mA, Is= 10 rnA
Siemens 513
BFQ 17P
AC characteristics
min typ max
Ic= 70 rnA, VCE = 5 V, f= 200 MHz - 1.4 -
Ic= 150 rnA, VcE =5V, f=200MHz - 1.2 -
Collector-base capacitance C cb - 1.9 - pF
Vce=10V, VeE =Vbe=0,f=1 MHz
Input capacitance C,bo - 13 - pF
VEe = 0.5 V, Ic = ic = 0, f= 1 MHz
Output capacitance Cobs - 2.5 4 pF
VCE = 10 V, VeE = vbe = 0, f= 1 MHz
Ic = 60 rnA, VCE = 15 V, f=500 MHz,
Zs = ZSOPh ZL = ZLOPt
Linear output voltage Vol = Vo2 - 480 - rnV
two-tone interrnodulation test
Ic = 60 rnA, VCE = 15 V, aiM =60 dB
fl = 206 MHz, f2 = 210 MHz, Zs = ZL = 50 Q
Third order intercept point IP3 - 36.5 - dBrn
Ic = 60 rnA, VCE = 15 V, f= 200 MHz
514 Siemens
BFQ 17P
Total power dissipation P'o' f (TiJ = Transition frequency f.r = f (lei

Package mounted on alumina VeE = 5 V, f= 200 MHz
mW GHz
r
1.2 1.5
i",
1.0
1/ "
1\ II
~
0.8 to
i\ I
1\
0.6
1\
0.4 ~ 0.5
i\
\
0.2
1\
o \ o
o 50 100 150·( o 50 100 159 mA
-7,; -Ie
COllector-base capacitance Ccb =f (VeB)

VBE = Vbe=O, f= 1 MHz
pF
5
,
4
\
3
\
2
"- r-....
r--. r--. I-
--
o
o 10 20V
-liB
Siemens 515
NPN Silicon RF Transistor BFQ 19P
• For low-distortion broadband amplifiers in antenna and

telecommunications systems at collector currents from
10 to 70 mA. E
For new design refer to BFQ 19S

(tape and reel)
BFQ19P FE Q 62702 - F1 060 SOT-89
~Y1a;dmum Ratings
Peak collector current, f2:. 1 MHz ICM 150 mA
Total power dissipation, TA :::; 25 °C 2) Ptot 1 W
Junction temperature Ii 150 °c
Thermal Resistance
Junction - ambient ') j RthJA j :::;125 jKIW
516 Siemens
BFQ 19P
DC characteristics
min typ max
Collector-emitter breakdown voltage "1eR)CEO 15 - - V
Ic= 1 mA,Ie=O
Collector-base cutoff current Iceo - - 100 nA
Vce= 10\l,IE =0
Emitter-base cutoff current I Eeo - - 10 ~
VEe = 2 \I, Ic = 0
Ic = 50 mA, VCE = 10 V
Ie = 75 mA, Ie = 7.5 mA
Siemens 517
BFQ 19P
AC characteristics
min typ max
Transition frequency fir GHz
Ic=50mA, VCE=10V; f=200MHz 4 4.B -
Ic = 75 rnA, VCE = 10 V; f= 200 MHz 4.4 5.1 -
Collector-base capacitance CCb - 1.1 1.5 pF
VCB=10V; VBE =Vbe=0,f=1 MHz
Collector-emitter capacitance Cee - 0.4 - pF
VCE=10V; VBE = Vbe=O,f= 1 MHz
VCE = 10 V; VBE = Vbe = O,f= 1 MHz
Noise figure F - 3.B - dB
Ic = 50 rnA, VCE = 10 V; f = BOO MHz, Zs = ZSopt
Ic = 70 mA, VCE = 10 V; f= BOO MHz,
Zs = ZsoPt, ZL = ZLOPt
Linear output voltage Vo1 = Vo2 - 500 - mV
Ic = 70 mA, VCE = 10V; ~M = 60dB
f, = B06 MHz, f2 = B10 MHz, Zs = ZL = 50 n
Third order intercept point IPs - 37 - dBm
Ic = 70 mA, VCE = 10 V; f= BOO MHz
51B Siemens
BFQ 19P
Total power dissipation Pto. = f ITAl Transition frequency fT = f (Iel

W GHz
1.2 6
Po
",
f1.0 ,/'
I\.
1\ V
0.8 4
\ V
\
0.6 3
/
I
1\
0.4 1\ 2 I
1\ 1
.\ I
0.2
\.
o 1\ o
o 50 100 150 0 ( o 50 100 mA
-Ic
Collector-base capacitance Ceb = f (Vee)

VSE = Vb. = 0, f= 1 MHz
pF
3
\
\
i'\.
-
o0 10 20 V
-\I(e
Siemens 519
NPN Silicon RF Transistor BFQ 19S
• For low-noise, low-distortion broadband amplifiers in

antenna and telecommunications systems up to
1.5 GHz at collector currents from 10 to 70 mA. E
Ii CECC-type available: CECC 500021259.

(tape and reel)
BFQ 19S FG Q 62702 - F1 088 SOT-89
Maximum Ratings
Collector-base voltage VC60 20 V
Emitter-base voltage VE60 3 V
Peak collector current, ' 2: 1 MHz ICM 150 mA
Total power dissipation, TA $ 25 °C~ Ptot 1 W
Thermal Resistance
Junction - ambient1 ) I RthJA 1$125 IKIW
520 Siemens
BFQ 195
DC characteristics
min typ max
Collector-emitter breakdown voltage \t(SR)CEO 15 - - V
Ic= 1 mA,Is=O
Vcs = 10 V. IE = 0
Emitter-base cutoff current I ESO - - 10 JlA
VES = 2 V. Ic = 0

Ic = 50 rnA, VCE = 10 V
Ic =75 rnA, Is=7.5mA
Siemens 521
BFQ 195
AC characteristics
min typ max
Ie = SO rnA, VeE = 10 \I, f= 200 MHz - 5 -
Ie = 70 rnA, VeE = 10\1, f=200 MHz - 5.1 -
Col/ector-base capacitance Ccb - 1 - pF
Vce = 10\1, VeE = vbe= 0, f= 1 MHz
Col/ector-emitter capacitance Cee - 0.4 - pF
VeE = 10\1, VeE = vbe = 0, f= 1 MHz
Input capacitance Gibe - 4.S - pF
VEe = O.S \I, Ie = ic = 0, f= 1 MHz
Output capacitance Cobs - 1.4S - pF
VCE = 10\1, VeE = Vbe = 0, f= 1 MHz
Noise figure F dB
Ic= 5 rnA, VCE = 10V. f= 10 MHz,Zs=Son - 0.9 -
Ic = 50 rnA, VCE = 10 V. f= BOO MHz, Zs = Zsopt - 2.B -
Power gain Gpe - 11.B - dB
Ic = 70 rnA, VeE = 10 V. f= BOO MHz,
Zs = SO n, ZL = ZLopt
Linear output.voltage Vol = Vo2 - 520 - mV
Ic = 70 rnA, VCE = 10\1, diM = 60dB
~ = B06 MHz, f2 =810 MHz, Zs=ZL =50 n
Third order intercept point IP3 - 37.5 - dBm

I c =70mA, VeE = 10\1, f=800MHz
522 Siemens
BFQ 19S
Total power dissipation Ptot = f (T,J Transition frequency fT = f (Iel

Package mounted on alumina VcE =10V, f=200MHz
W GHz
1.2 6
~ot
1.0 5
t \. / "
0.6
I\. 4
/
1\ I
0.6
\
3
I
I\.
0.4 1\ I
I\. I
0.2
\
I
I\.
1\ o
50 100 150 0 ( o 20 40 60 BO 100 rnA
-T,
Collector-base capacitance Cob = f (VCB)

VBE = Vb. = 0, f= 1 MHz
pF
3
Ceb
1
2
\
\
, .......
~
o
o 10 20 V
-ifcB
Siemens 523
BFQ 198

Ie = 5 rnA, VeE = 10 V, Zo = 50 Q
f Fmin Gp (Fmin) ropt RN N Fson Gp (Fsonl
0.01 0.9 - (Zs = 50 Q) - - 0.9 -
Ie = 50 rnA, VeE = 10 V, 20 = 50 Q
f Fmin Gp (Fmin) ropt RN N Fson Gp (Fsonl
GHz dB dB MAG ANG Q - dB dB
0.01 2.2 - - - - - 2.2 -
0.8 2.8 - - - - - 3.5 -
Noise figure F = f (Ie! Noise figure F = f (Ie!

VCE = 10\1, f= 10 MHz VCE = 10\1, f= 800 MHz, ZLoPt (G)
dB dB
4 4
I
I
F F Z,=50Q
t 3 r 3
II \
"1"- V
./
-
\ "- V
./
V
.....
2
V
2 '-IZ,'Sop!
/'
V
/'
\ V Zs='SOQ
I-'
o o
o 10 20 30 40 50 rnA o 10 20 30 40 50 rnA
524 Siemens
BFQ 19S
linear output voltage Vo = f (lei

VeE = 10V, diM = 60 dB,', = 806 MHz
'2 = 810 MHz, Zs =ZL = 50 n
mY
600
1~
400
/
/
-I-
300 I
V
200
/
II
100
a
o 20 40 60 BO mA
-Ie
Siemens 525
NPN Silicon RF Transistor BFQ29P
• For low-noise IF and broadband amplifiers up to 1 GHz

at collector currents from 1 to 20 mA.
€ CECC-type available: CECC 50002/258.

(tape and reel)
BFQ29P KC Q 62702 - F659 SOT-23
Maximum Ratings
Thermal Resistance
Junction - ambient1 ) I RthJA I :5450 IKIW
526 Siemens
BFQ 29P
DC characteristics
min typ max
Collector-emitter breakdown voltage \t(BR)CEO 15 - - V
Ic=1 mA,Is=O
Collector-base cutoff current leBo ~
VCB = 10 V. h = 0 - - 0.05
VCB = 20 V. IE = 0 - - 10
Emitter-base cutoff current lEBO - - 100 ~
VEB = 3 V. Ic = 0
Ic= 3 rnA, VcE =6V 50 - 250
Ic=10mA, VcE =6V 50 140 -
Siemens 527
BFQ 29P
AC characteristics
min typ max
Ic= 3 rnA, VCE = 6 V, f= 200 MHz - 2.7 -
Ic = 20 rnA, VCE = 6 V, f= 200 MHz 3.6 5 -
Collector-base capacitance Ceb - 0.5 0.65 pF
Vcs=10V, VSE=Vbe=0,f=1 MHz
VCE = 10 V, VSE = Vbe = 0, f= 1 MHz
Input capacitance C,bo - 1.35 - pF
VES = 0.5 V, Ic = ie = 0, f= 1 MHz
Noise figure F dB
Ic=3mA, VcE =6V, f= 10MHz,Zs=75n - 0.9 1.2
Ic=4mA, VcE =6V, f=800MHz,Zs=50n - 1.5 -
Power gain Gpe - 14 - dB
Ic = 20 rnA, VCE = 6 V, f= 800 MHz,
Zs = 50 n, ZL = ZLOPt
Transducer gain lS:!lel 2 - 11 - dB
Ic = 20 rnA, VCE =6 V, f= 1 GHz, Zo = 50n
Ic = 20 rnA, VCE = 6 V, ~M = 60dB
fl = 806 MHz, f2 = 810 MHz, Zs =ZL =50 n
Ic = 20 rnA, VCE = 6 V, f= 800 MHz
528 Siemens
BFQ29P
Total power dissipation p.o. '" f IT,J Transition frequency f.r '" f (lei
Package mounted on alumina VeE = 6 V. f= 200 MHz
mW GHz
400 6
-
Plot
k"'~
t 300
V
I
1,\
200 1'\ 3
I\.
~
I
100
'\
'\
o
o 50 100
~~
"'
150 0 (
o
o 10 20
-Ie
30 rnA
Collector-base capacitance Cob'" f (VCB)

VBE = Vbe = 0, f= 1 MHz
pF
1.2
r to
\
\
0.8
~
\
0.6
0.4
r"-
--
0.2
o
o 10 20 V
-VcB
Siemens 529
BFQ29P

Ie = 3 rnA, VeE = 6 V, Zo = 50 n
f Fmin Gp (Fminl ToP! RN N Fson Gp (Fson>
GHz dB dB MAG lANG n - dB dB
0.01 0.85 - (Zs=130n) - - 1.2 -
Ie = 5 rnA, VeE = 6 V, Zo = 50 n
f Fmin Gp (Fmin) Top! RN N Fson Gp (Fson>
0.01 0.85 - (Zs=100n) - - 1.1 -
0.8 1.25 13 0.25 I
93.5 11.1 0.20 1.45 14
Noise figure F= f (4)

VeE =6 V. f= 10 MHz
dB
3 , Ic=30mA /
/
20
~
F / II
/ /
t \ II 1.1
2
\ / II ~i""
V V
t'-~
l
~ .... _:I<
\ ~ '" .......... ~f'
J-f'
"'" 1
o
o 100 200 300Q
-Zs
530 Siemens
BFQ29P
Circles of constant noise figure F = f (ZS> Noise figure F = f (Ie)

in Zs-plane,lc = 5 rnA, VCE = 6 V, f= 800 MHz VeE = 6 V. f= 800 MHz, ZLopt (G)
dB
3
t
,
I.
\ Zs=50Q
,.. .....-:: ~
"""- r- -- .....I-:;::::
'lSDpt
-j50
o
o 10 20 rnA
-Ie
Siemens 531
BFQ29P

Ic= 2 mA, VCE = 6 V, Zo = 50 Q
f 8 11 ~1 8 12 ~2
0.1 0.93 - 20 6.76 158 0.03 76 0.97 - 7
0.2 0.86 - 45 6.42 144 0.06 65 0.89 -17
0.3 0.79 - 62 5.16 133 0.08 57 0.85 -23
0.5 0.66 - 93 4.19 113 0.11 47 0.73 -29
0.8 0.50 -129 2.99 92 0.11 41 0.62 -33
1.0 0.47 -147 2.48 82 0.12 41 0.59 -35
1.2 0.45 -161 2.11 74 0.13 42 0.57 -37
1.5 0.43 179 1.78 63 0.14 47 0.55 -40
1.8 0.45 159 1.51 54 0.16 52 0.54 -46
2.0 0.46 149 1.42 48 0.17 56 0.52 -48
S11,~=f(f) 5,2, 5". = f (f)

Ie = 2 mA, VeE = 6 V, Zo = 50 Q Ie = 2 mA, VeE = 6 V, Zo = 50 Q
+j50 90 0
-j50 -90 0
532 Siemens
BFQ29P
Ic = 5 mA, VCE = 6 V. Zo = 50 n
f 5 11 5.!1 5 12 5.!2

0.1 0.80 - 31 13.96 147 0.03 72 0.89 -13
0.2 0.69 - 66 11.55 129 0.05 60 0.76 -28
0.3 0.57 - 84 8.56 119 0.06 55 0.68 -31
0.5 0.46 -118 6.06 102 0.08 53 0.54 -34
0.8 0.35 -152 4.00 85 0.10 55 0.46 -33
1.0 0.34 -167 3.25 77 0.12 57 0.45 -35
1.2 0.34 -180 2.74 71 0.13 58 0.43 -36
1.5 0.34 164 2.28 61 0.16 59 0.42 -39
1.8 0.36 148 1.94 54 0.19 60 0.41 -44
2.0 0.37 139 1.80 49 0.20 60 0.39 -44
=
S,1, S:zz f If) S,2, Sz1 =f If)
Ie =5 rnA, VcE =6V, ~=50n Ic=5mA, VCE=6\t,~=50n
90·
-j50 -90·
Siemens 533
BFQ29P
Ic = 10 rnA, VCE = 6 V, ZO = 50 n
f S" ~, S'2 ~2
GHz MAG ANG MAG ANG MAG ANG . MAG ANG
0.1 0.65 - 46 20.65 135 0.03 69 0.79 -18
0.2 0.53 - 87 14.88 117 0.04 58 0.61 -32
0.3 0.42 -104 10.41 108 0.05 59 0.54 -33
0.5 0.35 -137 6.92 94 0.07 61 0.43 -33
0.8 0.29 -169 4.47 80 0.10 63 0.39 -30
1.0 0.30 179 3.59 74 0.12 65 0.38 -32
1.2 0.30 169 3.04 69 0.14 64 0.36 -34
1.5 0.30 155 2.50 60 0.17 63 0.36 -36
1.8 0.33 141 2.11 53 0.20 62 0.35 -41
2.0 0.35 133 1.97 49 0.22 62 0.33 -42
s". 5,,2 = f If) S,2, 5", = f If)

Ic = 10 mA, VCE = 6 V, Zo = 50 n Ic=10mA, VcE =6V,Zo=50n
+j50 90 0
o Q 1800 o
-j50 -90 0
534 Siemens
BFQ29P
Ic = 20 rnA, VCE = 6 V, 20 = 50 Q
f 8 11 5.21 8 12 5.22

0.1 0.47 - 64 25.26 126 0.02 67 0.69 -21
0.2 0.40 -108 16.60 109 0.03 62 0.50 -32
0.3 0.33 -125 11.22 102 0.04 65 0.46 -30
0.5 0.31 -154 7.16 89 0.06 68 0.39 -28
0.8 0.28 178 4.57 77 0.09 68 0.36 -26
1.0 0.29 169 3.65 72 0.12 69 0.36 -28
1.2 0.30 161 3.09 67 0.14 68 0.35 -30
1.5 0.30 148 2.54 59 0.17 66 0.34 -33
1.8 0.33 135 2.15 52 0.21 64 0.34 -39
2.0 0.35 128 2.00 48 0.22 63 0.32 -39
S.1,~=f(f) =
S.2, 8.!1 f (f)
Ie = 20 rnA, VeE =6 \I,.zo =500 Ie = 20 rnA, VeE = 6\1,.zo =500
90 0
- j50 -90 0
Siemens 535
NPN Silicon RF Transistor BFQ64
• For low-distortion broadband amplifiers in antenna and

telecommunications systems at collector currents from
70 to 150 mA. E

(tape and reel)
BFQ64 FC Q 62702-F1061 SOT-89
Maximum Ratings
Peak collector current, f~ 1 MHz ICM 250 mA
Total power dissipation, TA ~ 25 °C2) Ptot 1 W
Thermal Resistance
Junction - ambient 1) I RthJA I ~125 IKIW
536 Siemens
BFQ64
DC characteristics
min typ max
Collector-emitter cutoff current ICES - - 1 mA
VCE = 30 V. VBE = 0

VCB = 15 V. IE = 0
Emitter-base cutoff current lEBO - - 10 !lA

VEB = 2 V. Ic = 0
Ic=120mA, VcE =5V
Siemens 537
BFQ64
AC characteristics
min typ max
Transition frequency fT - 3 - GHz
Ie = 100 rnA, VeE = 5 V; f= 200 MHz
Collector-base capacitance Ccb - 1 - pF
VCB = 10 V; VBE = vbe = 0, f= 1 MHz
VEB = 0.5 V; Ie = ic = 0'(= 1 MHz
Ie = 100 rnA, VeE = 10V; f= 800 MHz,
Zs = ZSopt> ZL = ZLopt
Ie = 100 rnA, VeE = 10 V; diM = 60 dB
f1 = 806 MHz, f2 = 810 MHz, Zs = ZL = 50 n
Ie = 100 rnA, VeE = 10V; f= 800 MHz
538 Siemens
BFQ64
Total power dissipation P tot = f IT,.)

Package mounted on alumina
W
1.2
P.
fl.0
\.
O.B
\
[\
\
0.6
0.4 \
\
1\
0.2
\.
o \
o 50 100 150 "C
Siemens 539
NPN Silicon RF Transistor BFQ81
• For low-noise amplifiers up to 2 GHz and broadband

analog and digital applications in telecommunications
systems at col/ector currents from 0.5 to 20 mA.
~ CECC-type available: CECC 50002/257.

(tape and reel)
BFO 81 RA o 62702 - F1 049 SOT-23
Maximum Ratings
Col/ector-emitter voltage VCEO 16 V
Col/ector-base voltage VCBO 25 V
Total power dissipation, TA ~ 25 °C2) PIOI 280 mW
Storage temperature range Tslg -65 ... +150 °c
Thermal Resistance
Junction - ambient 1 ) RthJA ~450 IKIW
540 Siemens
BFQ81
DC characteristics
min typ max
Ic=1 mA,Is=O
VCB = 15 V, IE = 0
Emitter-base cutoff current lEBO - - 10 J.LA
VES = 2 V, Ic = 0
Ic= 5 mA, VCE = 10V 50 - 250
Ic=15mA, VcE =10V 50 - -
Ic = 30 mA, Is = 3 mA
Base-emitter voltage VBE - 0.78 - V
Ic = 10 mA, VCE = 10 V
Siemens 541
BFQ81
AC characteristics
min typ max
Ic= 5 rnA, VCE = 10 V, f= 200 MHz - 4.2 -
Ic = 15 rnA, VCE = 10V, f= 200 MHz - 5.8 -
Collector-base capacitance Gcb - 0.38 - pF
VCB = 10 V, VBE = Vbe = 0, f= 1 MHz
Collector-emitter capacitance Gce - 0.22 - pF
VCE = 10 V, VBE = Vbe = 0, f= 1 MHz
Input capacitance. C,bo - 1.27 - pF
VEB = 0.5 V,Ic = ic = 0, f= 1 MHz
VcE =10V, VBE =Vbe=0,f=1 MHz
Noise figure F dB
Ic= 3 rnA, VCE = 10V, f= 10MHz,Zs=75n - 0.9 -
Ic= 5 rnA, VCE = 10 V,f= 800 MHz, Zs = 50 n - 1.4 -
Ic=10mA, VcE =10V,f= 2 GHz, Zs = Zsopt - 2.5 -
Ic= SmA, VcE =10V,f=800MHz,
Transducer gain 1~1e12 - 12.4 - dB
Ic = 20 rnA, VCE = 10V, f= 1 GHz, 2{. = 50 n
Ic = 25 rnA, VCE = 10V, diM =60dB
r, =806 MHz, f2 =810MHz,Zs=ZL=50n
Third order intercept point 1P3 - 27 - dBm
Ic = 25 rnA, VCE = 10 V, f= 800 MHz
542 Siemens
BFQ81
Total power dissipation P'ot = f IT,J Transition frequency fT = f (Icl

Package mounted on alumina f=200MHz
mW 6Hz
400 6
1/ i--l
VCE=~V
1I 1---1-1'--
1// \
, 4
IA ,1V
"-
200
I"1'\
, 3 II \
1\
" 2
100
1'\
o 1'\ o
o 50 100 150 DC o 10 20 30 mA
-TA --Ie
Collector-base capacitance COb =f (Vca)

VBE = Vbe=O, (=1 MHz
pF
1.0
r\\
0.5
i'-- I-....
-. t- t -
t--
o
o 10 20 V
-\'cs
Siemens 543
BFQ81

Ie = 3 rnA, VeE = 10 V. Zo = 50 Q
f Fmin Gp (Fmin) Topt RN N F 50n Gp (F50nl
GHz dB dB MAG 1 ANG Q - dB dB

0.01 0.7 - (Zs = 150 Q) - - 1.2 -
Ie = 5 rnA, VeE = 10 V. 2Q =50 Q
f Fmin Gp (Fmin) Topt RN ·N F50n Gp (F50nl
GHz dB dB MAG 1 ANG Q - dB dB

0.01 0.8 - (Zs = 150 Q) - - 1.15 -
0.8 1.3 14.2 0.22 71.5I 11.7 0.19 1.4 14
Ie = 10 rnA, VeE = 10 V, 2Q = 50 Q
f Fmin Gp (Fmin) Topt RN N F 50n Gp (F50nl
GHz dB dB MAG 1ANG Q - dB dB

2.0 2.5 8.5 0.27 1-139 14.2 0.39 2.8 -
Noise figure F=f(lcl

VeE = 10V, f= 10 MHz
dB
3
t
2
\ Zs=1S0~\ - r-
soQ
7SQ, ~ ,...
I ./ K:: I>-
-~
i--"'"" ~ I-"
i--"'""
.......:: i:---'
,'-. ~ r'
'-
o
o 10 20 mA
-Ie
544 Siemens
BFQ81
Circles of constant noise figure F= f (Zs) Noise figure F = f (Iel

and available power gain Gav = f (Zs) VCE = 10 V, f= 800 MHz, ZLopt (G)
Ic=5mA, VcE =10Y, f=800MHz dB
+ j50 3
t I
\ is=5011~ V
....-::
-::..--
\f\.. f- ~
~
- i--""" :lsopt
- j SO
o
o 10 20 rnA
Circles of constant noise figure F = f (Zs) Noise figure F= f (Iel

and available power gain Gav = f (Zs) VCE = 10V, f= 2 GHz, ZLoPt (G)
Ic= 10 mA, VCE = 10V, f= 2 GHz dB
+ j 50 4
I I
I I
I _I r
\ 2s=5011 :;;;; ~
\ I V /'
I ....--r ..,-
\\.
-
"- - /'
7
./
]7
"'Zsopt
6.,=10.3,10,9,8,7 dB
- j 50
o
o 10 20 rnA
-Ie
Siemens 545
BFQ81

Power gain Gms, 15;,1.12 = f (lei Power gain Gma, 15;,1.12 =f (lei
dB VCE = 10V, f= 200 MHz,.20 = 50n dB VCE = lOll, f= 500 MHz,.20= 50n
30 30
1/
/
Um.
/
--
l.--"
I-
l - I - I- Um.
7 IS21.12 ~-
7
l-
1/
./
II IS21.1
- 2
10 10
>-- I- U s21. -l I
>-- I- I m· l- ~12. 'I
I- ams- -I -S
2"1
S12.
10 20 mA 10 20 mA
-Ie -Ie
Power gain Gm., Gms, 15;,1.12 =f (leI Power gain Gma, 15;,1.12 =f(lel
VCE = 10 II, f= 1 GHz,.20 = 50 n VCE = 1011, f= 2 GHz,.20 = 50n
dB dB
20 20
1 I I I d .1 I I I
u"" Um. l- I- um. =Is21·I·(k -/kG') -
V 112 •
I
Um.
V IS21.1 2
10 10
~
I-
V IS21.1 2
I- Um• = S21. II S12.
- -
I-
um. =l s21·1·(k_Jk 2_1',- -
I I ~12"1 I I I
10 20 mA 10 20 mA
-Ie -Ie
546 Siemens
BFQ81
Power gain Gma , Gmso 1$",.1 2 = f (fl Power gain Gma , Gms• 1$",.1 2 = f (fl
Ic = 2 mA, VCE = 10 V, Zo = 50 n Ie = 5 mA, VeE = 10 V, Zo = 50 n
dB dB
30 30
-"'"""," "
Oma Oma
I
Oms Oms Oms
1521 i ~ 15 2,i
.........
1 20 "'- r--.. 0 ms t 20
I-
-.... I'-.. "" "
1521,1 2 1\
I------ 15 21,1
i'l'. " _'\. oma-
\. Oma
10 10 "'"\.
r'\. I'
"'-\ 'fm
- 21 , 1
o ms-_\5
5'2,
"'-\ 52 ",
_Oms= 15'2, 1"'-
Oma "1~2"'2. I· (k -Jk2J J 1"'- o ma -_1 -52 "1 ·(k- k -1) .Jk21
5'2. I
o o
0.1 0.5 1 2 3 GHz 0.1 0.5 1 2 3 GHz
-f -f
Power gain Gma , Gms .I$",.1 2 = f (fl Power gain Gma • Gms • 1$",.1 2 = f (tl
le=10mA, VeE =10V,Zo=50n le=20mA, VcE =10Il,Zo=50n
dB dB
30 30
~
Oma
"'"" " .1
Oms Oma ~ r'\.
"' I\.
&1
'" " "'

ms
Oms Oms
I5 21 i 15 2,i '\ I\.
1 20
I------ 1521,1 2
'\.
~
'\
'\
I 20
I------
r\
15 2,,1 2
1\ "'
'\
Oma - I--
1\ Oma f--
~ '\.
10 "'-"
"\ ~
10 "'-"""
"'- "fm
I-- Oms = 152', 1

o ms- 52
_1 5'2, I
- "
I--
5'2, "\ "\
f- Om,
I
=1~21'1·(k_./kG')
1'2 • i I I I I II
Oma = 52', (k I5'2, I· -IkG\
0.5 2 3 GHz
o0.1 0.5 2 3 GHz
-f -f
Siemens 547
BFQ81

Ic = 1 rnA, VCE = 1 V, ~ = 50 n
f 5 11 5.21 ~2 5.22
0.10 0.950 - 18.8 3.58 165.3 0.046 78.6 0.980 - 8.6
0.15 0.931 - 28.0 3.51 158.2 0.067 73.2 0.962 -12.5
0.20 0.910 - 36.9 3.42 151.3 0.087 68.1 0.939 -16.3
0.25 0.882 - 45.5 3.30 144.8 0.105 63.2 0.913 -19.8
0.30 0.854 - 53.6 3.17 138.6 0.120 58.7 0.885 -22.9
0.40 0.797 - 68.8 2.90 127.5 0.145 50.9 0.827 -28.3
0.50 0.743 - 82.4 2.64 117.9 0.163 44.6 0.775 -32.7
0.60 0.700 - 94.9 2.41 109.3 0.175 39.5 0.729 -36.2
0.70 0.659 -106.5 2.21 101.8 0.184 35.3 0.690 -39.1
0.80 0.636 -116.6 2.04 94.9 0.190 31.7 0.657 -41.4
0.90 0.612 -126.7 1.90 88.6 0.192 28.9 0.628 -43.6
1.00 0.590 -136.0 1.76 82.7 0.192 26.9 0.603 -45.5
1.20 0.566 -152.5 1.54 72.7 0.190 24.5 0.567 -49.0
1.40 0.551 -167.0 1.37 64.2 0.185 24.1 0.544 -52.7
1.50 0.546 -173.7 1.31 60.6 0.182 24.9 0.535 -54.6
1.60 0.547 -179.7 1.25 56.7 0.181 26.0 0.529 -56.6
1.80 0.548 168.9 1.15 49.8 0.179 29.1 0.518 -60.8
2.00 0.559 158.6 1.06 43.5 0.180 33.3 0.506 -65.5
548 Siemens
BFQ81
Ic = 2 rnA, VCE = 1 V, Zo = 50 n
f 8 11 ~1 8 12 ~2
0.10 0.904 - 25.9 6.71 160.4 0.045 75.4 0.955 -13.1
0.15 0.869 - 38.1 6.42 151.4 0.064 68.8 0.917 -18.8
0.20 0.829 - 49.5 6.06 143.2 0.081 63.1 0.870 -23.8
0.25 0.784 - 60.0 5.67 135.9 0.094 58.1 0.823 -28.1
0.30 0.742 - 69.7 5.27 129.2 0.106 53.9 0.776 -31.7
0.40 0.668 - 86.8 4.57 118.2 0.122 47.5 0.692 -37.2
0.50 0.611 -101.3 3.99 109.1 0.133 43.1 0.627 -41.0
0.60 0.569 -114.0 3.51 101.5 0.141 40.2 0.575 -43.8
0.70 0.535 -125.4 3.14 95.0 0.147 38.3 0.535 -46.0
0.80 0.518 -135.0 2.83 89.1 0.152 37.0 0.503 -47.6
0.90 0.501 -144.8 2.59 83.8 0.156 36.4 0.476 -49.2
1.00 0.488 -153.4 2.37 78.9 0.159 36.3 0.454 -50.4
1.20 0.476 -168.4 2.04 70.6 0.166 37.3 0.422 -53.0
1.40 0.472 178.6 1.79 63.3 0.173 38.9 0.401 -56.0
1.50 0.468 172.8 1.69 60.0 0.178 40.1 0.395 -57.6
1.60 0.473 167.8 1.62 56.6 0.183 41.1 0.390 -59.4
1.80 0.477 157.8 1.48 50.5 0.195 43.0 0.380 -63.2
2.00 0.493 149.4 1.36 44.7 0.209 44.7 0.367 -67.8
Siemens 549
BFQ81
Ic = 2 rnA, VCE = 3 V. zo = 50 n
f ~1 5:11 8 12 5:12

0.10 0.916 - 21.7 6.74 163.0 0.032 77.8 0.970 - 9.3
0.15 0.886 - 32.2 6.52 155.0 0.046 72.3 0.943 -13.4
0.20 0.851 - 42.0 6.25 147.6 0.058 67.2 0.911 -17.1
0.25 0.810 - 51.2 5.92 140.8 0.069 62.8 0.875 -20.3
0.30 0.770 - 59.9 5.58 134.5 0.078 58.9 0.840 -23.1
0.40 0.695 - 75.5 4.94 123.8 0.093 52.8 0.773 -27.2
0.50 0.629 - 89.2 4.37 114.9 0.102 48.4 0.718 -30.2
0.60 0.580 -101.6 3.90 107.3 0.110 45.6 0.673 -32.4
0.70 0.534 -112.8 3.51 100.7 0.115 43.8 0.639 -34.0
0.80 0.511 -122.7 3.18 94.8 0.120 42.5 0.611 -35.2
0.90 0.486 -132.7 2.91 89.5 0.123 42.0 0.586 -36.3
1.00 0.466 -141.9 2.68 84.6 0.126 42.1 0.567 -37.2
1.20 0.444 -158.1 2.30 76.2 0.132 43.2 0.538 -39.1
1.40 0.431 -172.8 2.03 68.9 0.139 45.4 0.520 -41.3
1.50 0.424 -179.2 1.91 65.6 0.143 46.9 0.515 -42.5
1.60 0.427 175.2 1.82 62.3 0.148 48.3 0.511 -43.9
1.80 0.426 164.1 1.66 56.3 0.159 50.9 0.503 -46.8
2.00 0.440 154.8 1.52 50.5 0.172 53.1 0.491 -50.2
2.50 0.491 133.9 1.26 38.6 0.216 57.5 0.465 --60.6
3.00 0.518 117.9 1.10 28.4 0.273 57.9 0.457 -71.6
550 Siemens
BFQ81
Ic = 5 mA, VCE = 3 V. Zo = 50 !1
f 8 11 5.11 8 12 5.12

0.10 0.807 - 34.6 14.10 153.1 0.029 72.7 0.912 -16.5
0.15 0.741 - 49.5 12.83 142.1 0.040 66.2 0.842 -22.4
0.20 0.673 - 62.5 11.53 132.9 0.049 61.7 0.773 -26.7
0.25 0.611 - 73.9 10.31 125.4 0.055 58.6 0.711 -29.8
0.30 0.558 - 84.1 9.23 119.2 0.061 56.4 0.659 -31.8
0.40 0.479 -101.1 7.55 109.4 0.070 54.3 0.579 -34.0
0.50 0.425 -115.1 6.33 102.1 0.078 54.0 0.527 -35.1
0.60 0.389 -127.2 5.44 96.1 0.085 54.4 0.491 -35.4
0.70 0.363 -138.1 4.77 90.9 0.093 55.2 0.465 -35.9
0.80 0.351 -146.9 4.24 86.5 0.101 55.8 0.447 -36.1
0.90 0.340 -156.1 3.82 82.3 0.108 56.6 0.431 -36.6
1.00 0.335 -164.3 3.47 78.5 0.116 57.5 0.418 -36.9
1.20 0.331 -178.1 2.95 72.0 0.132 58.6 0.399 -38.1
1.40 0.333 168.8 2.57 66.0 0.149 59.3 0.388 -39.8
1.50 0.329 163.5 2.41 63.3 0.158 59.6 0.386 -40.9
1.60 0.335 159.1 2.29 60.5 0.168 59.7 0.383 -42.2
1.80 0.341 150.4 2.07 55.3 0.186 59.5 0.378 -45.3
2.00 0.359 143.3 1.89 50.4 0.205 59.0 0.366 -48.6
2.50 0.413 126.8 1.57 39.6 0.255 57.2 0.336 -58.4
3.00 0.444 114.2 1.37 29.7 0.308 54.0 0.326 -69.1
Siemens 551
BFQ81
Ic = 2 mA, VCE = 6 V, ZO = 50 n
f 8 11 5.z1 8 12 5.z2
0.10 0.924 - 20.0 6.69 164.0 0.026 78.8 0.976 - 7.7
0.15 0.896 - 29.6 6.50 156.5 0.038 73.5 0.954 -11.2
0.20 0.863 - 38.8 6.25 149.4 0.048 69.0 0.927 -14.2
0.25 0.824 - 47.5 5.96 142.8 0.058 64.8 0.898 -16.9
0.30 0.785 - 55.6 5.64 136.7 0.066 61.1 0.868 -19.2
0.40 0.709 - 70.5 5.04 126.2 0.079 55.1 0.811 -22.8
0.50 0.642 - 83.6 4.49 117.4 0.088 51.0 0.763 -25.4
0.60 0.588 - 95.6 4.03 109.8 0.094 48.2 0.723 -27.2
0.70 0.539 -106.7 3.64 103.2 0.099 46.4 0.692 -28.6
0.80 0.511 -116.4 3.31 97.3 0.104 45.2 0.667 -29.7
0.90 0.481 -126.5 3.04 92.0 0.107 44.7 0.645 -30.6
1.00 0.457 -135.8 2.80 87.1 0.110 44.9 0.627 -31.4
1.20 0.427 -152.6 2.41 78.7 0.115 46.3 0.602 -33.1
1.40 0.410 -167.9 2.12 71.3 0.121 48.7 0.586 -35.0
1.50 0.402 -174.6 2.00 68.0 0.125 50.5 0.582 -36.1
1.60 0.403 179.4 1.90 64.7 0.129 52.0 0.579 -37.2
1.80 0.402 167.6 1.72 58.7 0.139 55.1 0.573 -39.8
2.00 0.415 157.7 1.58 53.1 0.151 57.8 0.563 -42.7
2.50 0.465 135.6 1.31 41.0 0.193 63.0 0.540 -51.7
3.00 0.492 119.2 1.14 30.7 0.248 64.1 0.535 -61.2
~,. s.,. = f (f) ~2. s", = f (f)

Ic=2 mA, VCE=6V,~=50Q Ic=2 mA, VCE=6V,~=50Q
+j50 90·
180· o
-j50 -90·
552 Siemens
BFQ81
Ic = 5 rnA, VCE = 6 V. Zo = 50 n
f 511 5.?1 5 12 5.?2

0.10 0.827 - 31.1 13.95 154.8 0.024 74.1 0.929 -13.4
0.15 0.764 - 44.7 12.83 144.3 0.034 68.3 0.872 -18.3
0.20 0.698 - 56.7 11.65 135.4 0.041 63.9 0.813 -21.9
0.25 0.634 - 67.4 10.51 127.9 0.048 60.7 0.759 -24.4
0.30 0.577 - 76.8 9.48 121.7 0.053 58.5 0.713 -26.1
0.40 0.490 - 93.0 7.83 111.8 0.061 56.2 0.641 -27.8
0.50 0.426 -106.3 6.60 104.3 0.068 55.7 0.594 -28.6
0.60 0.385 -118.4 5.69 98.2 0.075 56.2 0.561 -29.0
0.70 0.352 -129.1 4.99 93.0 0.081 57.0 0.538 -29.2
0.80 0.332 -138.4 4.45 88.5 0.088 57.7 0.521 -29.5
0.90 0.318 -147.9 4.02 84.3 0.095 58.6 0.507 -29.9
1.00 0.308 -156.8 3.66 80.5 0.102 59.4 0.497 -30.2
1.20 0.300 -171.9 3.10 74.0 0.116 61.0 0.480 -31.3
1.40 0.297 173.9 2.70 68.0 0.131 61.9 0.470 -32.9
1.50 0.294 168.2 2.53 65.2 0.139 62.5 0.469 -33.8
1.60 0.298 162.9 2.40 62.6 0.147 62.7 0.467 -35.0
1.80 0.303 153.6 2.17 57.4 0.164 63.0 0.463 -37.6
2.00 0.321 146.0 1.98 52.6 0.181 62.8 0.453 -40.4
2.50 0.379 128.4 1.65 41.8 0.228 61.8 0.426 -48.6
3.00 0.408 115.3 1.43 31.9 0.278 59.4 0.419 -57.5
5", s.:. = f If) 5,2. 5", = f If)

Ie =5 rnA, VeE = 6\1, Zo = 50 Q Ie =5 rnA, VeE = 6\1, Zo = 50 Q
90'
180' o
_135'
-j50 -90'
Siemens 553
BFQ81
Ic = 10 mA, VCE = 6 V, Zo = 50 Q
f 8" S:e, 8 '2 S:e2
0.10 0.704 - 43.8 21.34 144.8 0.022 70.4 0.855 -19.0
0.15 0.610 - 60.5 18.27 132.6 0.029 65.1 0.763 -23.8
0.20 0.529 - 74.2 15.62 123.4 0.035 62.6 0.687 -26.4
0.25 0.465 - 85.5 13.44 116.4 0.039 61.7 0.629 -27.5
0.30 0.415 - 95.3 11.72 110.9 0.044 61.3 0.586 -27.8
0.40 0.348 -111.8 9.26 102.7 0.052 62.1 0.528 -27.5
0.50 0.304 -125.2 7.62 96.6 0.060 63.3 0.496 -27.1
0.60 0.278 -137.0 6.46 91.6 0.068 64.6 0.474 -26.7
0.70 0.261 -147.1 5.61 87.4 0.077 65.6 0.461 -26.8
0.80 0.254 -156.0 4.96 83.7 0.086 66.1 0.451 -26.9
0.90 0.248 -164.7 4.45 80.3 0.094 66.6 0.442 -27.2
1.00 0.248 -172.2 4.04 77.0 0.103 67.0 0.436 -27.5
1.20 0.250 174.1 3.41 71.4 0.121 67.2 0.424 -28.8
1.40 0.256 161.4 2.96 66.0 0.139 66.9 0.418 -30.5
1.50 0.255 156.4 2.78 63.6 0.148 66.8 0.418 -31.6
1.60 0.260 152.1 2.63 61.2 0.158 66.4 0.417 -32.8
1.80 0.266 144.3 2.37 56.5 0.177 65.6 0.413 -35.7
2.00 0.286 138.5 2.16 52.2 0.195 64.4 0.403 -38.6
2.50 0.346 123.8 1.79 41.9 0.244 61.5 0.375 -46.7
3.00 0.377 112.9 1.55 32.4 0.293 57.8 0.366 -55.6
5", s." = f (f) 5,2, ~, = f (f)

Ic=10mA, VcE =6\1,Zo=50n Ic = 10 mA, VCE = 6 V, Zo = 50 n
-j50 _90 0
554 Siemens
BFQ81
Ic = 20 rnA, VCE = 6 V, ~ = 50 Q
f 8 11 ~1 8 12 ~2
0.10 0.566 - 59.2 27.49 134.2 0.019 67.5 0.760 -22.9
0.15 0.464 - 78.4 21.82 121.9 0.024 64.6 0.655 -25.9
0.20 0.394 - 93.3 17.76 113.6 0.029 64.7 0.584 -26.3
0.25 0.345 -105.1 14.82 107.7 0.034 65.3 0.538 -25.9
0.30 0.311 -115.2 12.67 103.1 0.038 66.3 0.507 -25.1
0.40 0.271 -131.9 9.78 96.4 0.047 68.2 0.469 -23.6
0.50 0.247 -144.7 7.93 91.4 0.056 69.6 0.451 -22.9
0.60 0.236 -155.3 6.68 87.2 0.065 70.6 0.439 -22.6
0.70 0.229 -164.1 5.78 83.6 0.075 71.1 0.431 -22.8
0.80 0.228 -171.4 5.09 80.4 0.084 71.2 0.426 -23.2
0.90 0.231 -178.8 4.56 77.3 0.094 71.3 0.421 -23.8
1.00 0.232 174.7 4.13 74.4 0.103 71.2 0.417 -24.3
1.20 0.242 163.6 3.48 69.3 0.122 70.6 0.409 -25.9
1.40 0.253 152.6 3.02 64.3 0.141 69.7 0.404 -27.9
1.50 0.253 148.5 2.83 62.0 0.151 69.3 0.405 -29.1
1.60 0.258 144.9 2.68 59.7 0.161 68.6 0.404 -30.5
1.80 0.266 138.1 2.41 55.2 0.180 67.3 0.401 -33.6
2.00 0.284 133.9 2.19 51.0 0.200 65.8 0.391 -36.7
2.50 0.345 121.1 1.82 41.0 0.249 62.2 0.363 -44.8
3.00 0.374 110.8 1.58 31.7 0.297 58.1 0.353 -53.9
S",~=flf) S,2, ~, = f If)

Ie = 20 rnA, VeE = 611,.2{, = 500 Ie =20 rnA, VeE = 611,.2{,= 500
+j50
1800 o
-j50 _90 0
Siemens 555
BFQ81
Ic = 2 rnA, VCE = 10 V, Zo = 50 Q
f 8 11 ~, 8 '2 ~2
0.10 0.931 - 18.9 6.59 164.6 0.023 79.4 0.978 - 6.7
0.15 0.905 - 28.2 6.41 157.4 0.034 74.4 0.960 - 9.8
0.20 0.874 - 36.9 6.19 150.4 0.043 70.0 0.937 -12.5
0.25 0.836 - 45.2 5.92 144.1 0.052 65.9 0.911 -14.9
0.30 0.796 - 53.0 5.62 138.0 0.059 62.5 0.884 -17.0
0.40 0.722 - 67.4 5.05 127.7 0.071 56.5 0.833 -20.1
0.50 0.654 - 80.2 4.52 118.9 0.079 52.4 0.789 -22.4
0.60 0.597 - 91.9 4.06 111.3 0.085 49.7 0.753 -24.1
0.70 0.544 -102.7 3.68 104.7 0.090 47.9 0.725 -25.4
0.80 0.513 -112.3 3.35 98.9 0.094 46.6 0.702 -26.3
0.90 0.481 -122.3 3.09 93.5 0.097 46.2 0.681 -27.2
1.00 0.455 -131.7 2.85 88.5 0.100 46.5 0.666 -27.9
1.20 0.421 -148.7 2.45 80.0 0.105 47.9 0.642 -29.5
1.40 0.399 -164.4 2.16 72.6 0.110 50.5 0.628 -31.2
1.50 0.390 -171.2 2.03 69.4 0.114· 52.4 0.625 -32.2
1.60 0.390 -177.8 1.93 66.1 0.118 54.0 0.622 -33.3
1.80 0.385 170.4 1.76 60.1 0.127 57.3 0.617 -35.6
2.00 0.398 160.0 1.61 54.4 0.138 60.2 0.609 -38.2
2.50 0.447 136.9 1.33 42.3 0.177 66.0 0.589 -46.2
3.00 0.478 119.7 1.15 31.8 0.229 67.7 0.587 -54.8
5,1 ,5,2 = f If) 5,2,5" = f If)

Ie = 2 rnA, VeE = 10V, Zo = 50 n Ie = 2 rnA, VeE = 10V, Zo = 50 n
+j50
1800 o
-j50 _90 0
556 Siemens
BFQ81
Ic = 5 rnA, VCE = 10 V. Zo = 50 Q
f $11 ~1 $12 ~2
0.10 0.847 - 28.9 13.60 156.0 0.022 75.1 0.939 -11.5
0.15 0.786 - 41.7 12.60 145.9 0.030 69.5 0.889 -15.8
0.20 0.721 - 53.1 11.53 137.1 0.038 65.1 0.837 -19.0
0.25 0.657 - 63.1 10.46 129.7 0.043 61.9 0.790 -21.2
0.30 0.599 - 72.1 9.48 123.4 0.048 59.7 0.747 -22.7
0.40 0.506 - 87.6 7.89 113.5 0.056 57.2 0.682 -24.3
0.50 0.437 -100,4 6.68 105.9 0.062 56.7 0.639 -25.0
0.60 0.389 -112.2 5.77 99.6 0.069 57.0 0.607 -25.3
0.70 0.351 -122.8 5.08 94.4 0.075 57.8 0.586 -25.6
0.80 0.329 -132.0 4.53 89.8 0.081 58.5 0.570 -25.9
0.90 0.310 -141.8 4.10 85.6 0.087 59.4 0.557 -26.2
1.00 0.296 -150.7 3.73 81.7 0.093 60.4 0.548 -26.5
1.20 0.283 -166.8 3.17 75.2 0.106 61.9 0.532 -27.6
1.40 0.278 178.1 2.76 69.1 0.120 63.1 0.524 -29.0
1.50 0.273 171.8 2.58 66.4 0.127 63.9 0.523 -29.9
1.60 0.278 166.1 2.45 63.7 0.134 64.2 0.522 -31.0
1.80 0.280 156.3 2.21 58.7 0.150 64.8 0.518 -33.3
2.00 0.298 148.3 2.02 53.8 0.166 64.9 0.510 -35.9
2.50 0.357 129.4 1.67 42.9 0.209 64.6 0.487 -43.1
3.00 0.390 116.1 1.45 33.1 0.257 62.8 0.482 -51.1
5". Sn = f If) 5,2. 5", = f If)

Ic=5mA, VcE =10\/'Zo=50Q Ic = 5 rnA, VCE = 10\/, Zo =50 Q
90·
180· o
-jSO _90·
Siemens 557
BFQ81
Ie = 10 rnA, VeE = 10 V. Zo = 50 Q
f 8 11 ~1 8 12 ~2
0.10 0.744 - 39.7 20.56 146.8 0.020 71.5 0.877 -16.2
0.15 0.650 - 55.4 17.86 134.8 0.027 66.3 0.798 -20.4
0.20 0.566 - 68.1 15.44 125.6 0.032 63.4 0.729 -22.7
0.25 0.497 - 78.7 13.39 118.5 0.037 62.1 0.675 -23.8
0.30 0.441 - 88.0 11.74 112.8 0.041 61.7 0.635 -24.1
0.40 0.362 -103.8 9.33 104.4 0.048 62.2 0.580 -23.9
0.50 0.310 -116.5 7.70 98.1 0.055 63.3 0.549 -23.6
0.60 0.277 -128.3 6.54 93.0 0.063 64.6 0.529 -23.3
0.70 0.254 -138.5 5.70 88.6 0.071 65.7 0.516 -23.4
0.80 0.242 -147.7 5.04 84.9 0.079 66.3 0.507 -23.6
0.90 0.234 -157.0 4.52 81.4 0.086 67.0 0.499 -23.9
1.00 0.229 -165.8 4.10 78.1 0.094 67.5 0.493 -24.2
1.20 0.227 179.4 3.46 72.4 0.111 67.9 0.483 -25.4
1.40 0.232 165.5 3.01 67.1 0.127 67.8 0.477 -27.0
1.50 0.231 159.6 2.82 64.6 0.135 68.0 0.477 -28.0
1.60 0.237 155.1 2.67 62.2 0.144 67.7 0.476 -29.1
1.80 0.242 146.5 2.40 57.6 0.161 67.2 0.474 -31.7
2.00 0.261 140.5 2.19 53.2 0.179 66.3 0.465 -34.3
2.50 0.324 124.8 1.82 42.9 0.224 64.0 0.440 -41.4
3.00 0.355 113.5 1.57 33.4 0.270 61.0 0.433 -49.3
5 11 ,5,,2 = f (f) 5 ,2, 5", = f (f)

le=10mA, VcE =10V,Zo=50n Ie = 10 mA, VCE = 10V, Zo = 50 n
558 Siemens
BFQ81
Ic = 20 rnA, VCE = 10 V, Zo = 50 Q
f 8" ~, 8'2 ~2
0.10 0.628 - 52.7 26.24 137.1 0.018 68.5 0.800 -19.4
0.15 0.517 - 70.3 21.27 124.7 0.023 65.1 0.705 -22.1
0.20 0.435 - 84.1 17.51 116.0 0.028 64.3 0.639 -22.7
0.25 0.376 - 95.1 14.71 109.8 0.032 64.8 0.595 -22.4
0.30 0.332 -104.6 12.62 105.0 0.036 65.6 0.565 -21.8
0.40 0.277 -121.1 9.79 98.0 0.044 67.3 0.528 -20.6
0.50 0.243 -133.6 7.97 92.7 0.052 68.9 0.510 -20.1
0.60 0.227 -145.2 6.72 88.4 0.060 70.0 0.498 -19.9
0.70 0.215 -155.2 5.82 84.7 0.069 70.7 0.492 -20.1
0.80 0.211 -163.0 5.13 81.4 0.078 71.0 0.486 -20.5
0.90 0.210 -171.5 4.59 78.3 0.086 71.2 0.481 -21.0
1.00 0.210 -179.1 4.16 75.4 0.095 71.3 0.477 -21.6
1.20 0.218 168.5 3.50 70.1 0.112 71.1 0.470 -23.0
1.40 0.227 156.3 3.04 65.0 0.130 70.4 0.466 -24.9
1.50 0.228 151.2 2.84 62.7 0.139 70.2 0.467 -26.0
1.60 0.234 147.5 2.69 60.4 0.147 69.7 0.467 -27.3
1.80 0.241 140.0 2.42 56.0 0.165 68.7 0.465 -30.0
2.00 0.260 135.5 2.21 51.7 0.183 67.5 0.456 -32.8
2.50 0.324 122.0 1.83 41.7 0.229 64.5 0.431 -40.0
3.00 0.355 111.7 1.58 32.3 0.275 61.1 0.424 -48.1
s". 5z! = f (f) S,2, 5:., =f (f)

Ie = 20 mA, VeE = 10 V, Zo=500 le= 20 mA, VeE = 10V, Zo= 50 0
-jSO -90 0
Siemens 559
NPN Silicon RF Transistor BFR35AP
• For broadband amplifiers up to 2 GHz and fast non-

saturated switches at collector currents from 0.5 to
20 mA.

(tape and reel)
BFR35AP GE Q 62702 - F 938 SOT-23
Maximum Ratings
Collector-emitter voltage, VSE = 0 VCES 20 V
Emitter-base voltage VESO 2.5 V
Total power dissipation, TA ~ 25 °C 2) Ptot 280 mW
Thermal Resistance
Junction - ambient 1) RthJA I ~450 IKIW
560 Siemens
BFR35AP
DC characteristics
min typ max
Collector-emitter breakdown voltage \l(sR)CEO 12 - - V
Ic = 1 mA,ls= 0
Collector-emitter cutoff current ICES - - 100 ~
VcE =20V, VSE=O
Vcs =10V,IE =0
Emitter-base cutoff current I Eso - - 100 ~
VES = 2.5 V, Ic = 0
DC current gain !Jr,E -
Ic= 5mA, VcE =6V 40 85 -
Ic=20mA, VcE =6V 40 90 -
Ie =30 mA, Is =3 mA
Siemens 561
BFR35AP
AC characteristics
min typ max
Transition frequency fT GHz
Ic= 5mA, VcE =6V, f=200MHz - 3.8 -
Ic = 20 mA, VCE = 6 V, f= 200 MHz 3.6 4.9 -
Collector-base capacitance C eb - 0.56 0.7 pF
VCB = 6 V, VBE = vbe = 0, f= 1 MHz
Collector-emitter capacitance C ee - 0.27 - pF
VEB = 0.5 V, Ic = ie = 0, f= 1 MHz
Noise figure F dB
Ic=5mA, VCE = 6V, f= 10 MHz, Zs = 75 n - 1.5 -
Ic=2mA, VCE = 6V, f=800MHz,Zs=Zsopt - 1.5 -
Ic = 3 mA, VCE = 10V, f= 2 GHz, Zs = Zsopt - 3.9 -
Ic = 15 mA, VCE = 6 V, f= 800 MHz
Transducer gain 15.11e1 2 - 11 - dB
Ic=15mA, VcE =6V, f=1 GHz,Zo=50n
Ic = 15 mA, VCE = 10V, ~M = 60dS
fl = 806 MHz, f2 = 810 MHz, Zs = ZL = 50 n
Ic = 15 mA, VCE = 10V, f= 800 MHz
562 Siemens
BFR35AP
Total power dissipation Ptot = f (Till Transition frequency fT = f (Id

Package mounted on alumina VeE = 6 V,f= 200 MHz
rnW GHz
400 6
flot
,..
t 300 v
~
V
/
\
200
1,\
1\ 3 f
I
I\.
2
100 I
I
\
i\
o I\. o
o 50 100 150 0 ( o 10 20 rnA
-T,.
Collector-base capacitance Ccb =f (Vee)

VSE = Vbe = O. f= 1 MHz
pF
1.0
1\
1\
\
1\ ......
----
........ r-.....
O.S
I--
o
o 10 20 V
-lis
Siemens 563
BFR 35AP

Ie= 2 rnA, VeE = 6 V. Zo = 50 n
f Fmin Gp (Fmin) r opt RN N Fson Gp (Fson)
0.01 1.05 - (Zs= 150n) - - 3 -
Ie = 5 rnA, VeE = 6 V. Zo = 50 n
f Fmin Gp (Fmin) r opt RN N Fson Gp (Fsonl
0.01 1.3 - (Zs = 100n) - - 1.6 -
0.8 1.7 14.3 0.25 I 58.5 16.9 0.24 1.9 14
Noise figure F f (Zs)=

VcE =6 V. f= 10 MHz
dB
4
IA
AI
~=~O~~
-
-
l-
F 3
V
V I....-
:l V lOrnA
I
2 J...1'"
W~ -"SmA-
\.. ".
2m~
lmA -
o
o 100 200 300Sl
564 Siemens
BFR35AP
Circles of constant noise figure F =f (Zs) Noise figure F=f(Icl

lc= 5 rnA, VCE = 6 V, f= 800 MHz VCE = 6 V, f= 800 MHz, ZLopt (G)
dB
5
l 4
3
~ ~
z~~ ~
-
;...-"
2
\
\ ~ ~oPt
-j 50
o
o 10 20 rnA
-Ie
Siemens 565
BFR35AP

Ie = 0.5 rnA, VeE = 1 V, .20 = 50 n
f $11 ~1 ~2 ~2
0.10 0.967 - 12.3 1.83 168.2 0.050 81.5 0.990 - 6.7
0.15 0.956 - 18.4 1.82 162.3 0.075 77.4 0.982 -10.0
0.20 0.941 - 24.3 1.81 156.4 0.098 73.2 0.970 -13.0
0.25 0.923 - 30.2 1.78 150.8 0.120 69.3 0.955 -16.2
0.30 0.903 - 35.9 1.75 145.2 0.141 65.4 0.939 -19.1
0.40 0.859 - 47.0 1.68 134.7 0.177 58.2 0.902 -24.5
0.50 0.812 - 57.2 1.59 125.1 0.207 51.8 0.864 -29.4
0.60 0.765 - 67.2 1.51 116.1 0.231 46.2 0.826 -33.6
0.70 0.717 - 76.5 1.44 108.0 0.249 41.2 0.790 -37.4
0.80 0.686 - 85.5 1.36 100.3 0.265 36.3 0.757 -40.7
0.90 0.645 - 94.5 1.31 93.3 0.275 32.3 0.725 -43.8
1.00 0.610 -103.1 1.25 86.6 0.281 28.6 0.695 -46.4
Ie = 1 rnA, VeE = 1 V, .20 = 50 n

f $11 ~1 $12 ~2
0.10 0.938 - 16.4 3.51 165.6 0.050 79.4 0.981 . - 9.4
0.15 0.917 - 24.5 3.45 158.7 0.073 74.4 0.962 -13.8
0.20 0.892 - 32.2 3.37 151.9 0.095 69.6 0.938 -17.9
0.25 0.862 - 39.7 3.26 145.5 0.114 65.1 0.910 -21.9
0.30 0.829 - 46.7 3.13 139.4 0.132 60.8 0.881 -25.5
0.40 0.763 - 60.1 2.88 128.5 0.160 53.5 0.819 -31.7
0.50 0.699 - 72.0 2.64 118.9 0.182 47.6 0.761 -37.0
0.60 0.643 - 83.2 2.41 110.4 0.198 42.8 0.709 -41.2
0.70 0.591 - 93.4 2.22 102.9 0.209 38.9 0.665 -44.7
0.80 0.557 -103.0 2.05 96.1 0.219 35.5 0.626 -47.5
0.90 0.521 -112.6 1.92 89.8 0.225 32.9 0.591 -50.2
1.00 0.490 -121.7 1.79 84.0 0.229 30.8 0.559 -52.4
566 Siemens
BFR35AP
Ic = 2 rnA, VCE = 6 V, Zo = 50 Q
f 8" ~, 8 ,2 ~2
0.1 0.91 - 15 6.49 161 0.03 79 0.97 - 6
0.3 0.79 - 46 5.25 139 0.08 64 0.88 -22
0.5 0.66 - 71 4.49 120 0.11 55 0.77 -30
0.8 0.46 -102 3.29 98 0.13 47 0.64 -35
1.0 0.40 '-119 2.80 88 0.15 46 0.60 -38
1.2 0.36 -134 2.43 80 0.15 45 0.56 -40
1.5 0.31 -156 2.03 69 0.17 48 0.53 -43
1.8 0.29 -178 1.77 60 0.19 49 0.51 -48
2.0 0.29 168 1.66 54 0.20 51 0.49 -49
s...
5 11 , = f (f) 5'2, 5:.. = f (f)
Ic = 2 rnA, VCE = 6 V, Zo = 50 n Ic=2mA, VcE =6v,2<l=50n
90 0
1800 o
-j50 -90 0
Siemens 567
BFR35AP
Ic = 5 rnA, VCE = 6 V, Zo = 50 Q
f $" 5.1, $'2 5.12

0.1 0.80 - 24 12.96 150 0.03 75 0.92 -11
0.3 0.58 - 66 8.56 123 0.06 61 0.74 -29
0.5 0.44 - 97 6.27 106 0.08 58 0.59 -35
0.8 0.28 -128 4.19 88 0.11 57 0.49 -35
1.0 0.26 -144 3.45 81 0.13 59 0.49 -36
1.2 0.24 -160 2.93 74 0.14 58 0.45 -38
1.5 0.22 179 2.43 65 0.17 59 0.44 -40
1.8 0.23 159 2.08 57 0.20 59 0.43 -45
2.0 0.25 146 1.93 52 0.22 58 0.40 -46
5". s.", =f(f) 5, •• 8:., =f (f)

Ie = 5 rnA, VeE = 6 V. 2'0= son Ie = 5 rnA, VeE = 6 V, Zo = son
+j50 900
-j50 -90 0
568 Siemens
BFR 35AP
Ic = 10 rnA, VCE = 6 V. zo = 50 n
f 8 11 ~1 8 12 ~2
0.1 0.66 - 35 18.62 140 0.03 73 0.85 -15
0.3 0.42 - 85 10.32 113 0.05 62 0.62 -31
0.5 0.32 -116 6.92 98 0.07 63 0.50 -33
0.8 0.22 -149 4.49 83 0.10 64 0.44 -31
1.0 0.21 -164 3.65 77 0.12 65 0.43 -32
1.2 0.21 -178 3.09 71 0.14 64 0.41 -34
1.5 0.21 164 2.54 63 0.17 63 0.41 -36
1.8 0.22 147 2.18 55 0.21 62 0.40 -41
2.0 0.24 136 2.02 51 0.22 61 0.38 -42
5,1.s.:. =f If) 5,2. S:z1 = f (f)

Ic = 10 rnA. VCE = 6 V. Zo= 50 n Ic = 10 rnA. VCE = 6 V. Zo = 50 n
+j 50 90 0
-135 0 -45 0
-j50 -90 0
Siemens 569
BFR35AP
Ic = 15 rnA, VCE = 6 V, ~ = 50 n
f 811 ~1 8 12 ~2
0.1 0.57 - 43 20.30 137 0.02 71 0.81 -16
0.3 0.35 - 95 10.53 109 0.05 54 0.58 -29
0.5 0.27 -127 7.00 95 0.07 66 0.48 -29
0.8 0.21 -162 4.49 80 0.10 67 0.43 -27
1.0 0.21 -174 3.65 75 0.12 68 0.43 -29
1.2 0.21 174 3.09 70 0.14 66 0.41 -31
1.5 0.22 158 2.54 61 0.17 65 0.41 -34
1.8 0.24 142 2.15 54 0.21 64 0.41 -40
2.0 0.26 133 2.00 50 0.23 63 0.39 -40
5", S:!2 = f (f) =

5.t2. S:!1 f (f)
Ic = 15 mA, VCE = 6\1, 20= 50 0 Ic = 15 mA, VcE =6 \I, 20=500
+jSO 90 0
- jSO
570 Siemens
BFR 35AP
Ic = 20 rnA, VCE = 6 V, Zo = 50 Q
f Sl1 ~1 S12 ~2
0.1 0.51 - 49 21.13 133 0.02 70 0.79 -16
0.3 0.32 -106 10.35 106 0.05 65 0.56 -27
0.5 0.27 -138 6.76 92 0.07 67 0.48 -27
0.8 0.22 -171 4.34 78 0.09 68 0.45 -25
1.0 0.22 179 3.49 74 0.12 69 0.44 -28
1.2 0.23 169 2.97 68 0.14 68 0.43 -30
1.5 0.24 153 2.43 60 0.17 66 0.43 -33
1.8 0.26 139 2.07 53 0.21 65 0.42 -39
2.0 0.28 131 1.93 48 0.22 64 0.40 -39
. s", s", = f (f) 5'2, 5" = f (f)

Ic = 20 mA, VCE = 6 II, Zo = 50 Q Ic=20mA, VcE =6I1,ZQ=50Q
+ j50
180 0
- j50 -90 0
Siemens 571
BFR35AP
Ic = 2 rnA, VCE = 10 V. 4> = 50 Q
f 8" 5.2, 8'2 5.22

0.1 0.92 - 14 6.46 161 0.03 80 0.98 -6
0.3 0.81 - 43 5.28 140 0.07 66 0.90 -19
0.5 0.69 - 65 4.54 122 0.10 57 0.80 -27
0.8 0.48 - 95 3.35 99 0.12 49 0.68 -33
1.0 0.42 -111 2.87 90 0.14 48 0.64 -35
1.2 0.36 -125 2.45 83 0.15 47 0.61 -38
1.5 0.30 -146 2.07 71 0.16 49 0.58 -40
1.8 0.28 -170 1.81 62 0.18 50 0.56 -45
2.0 0.27 175 1.68 56 0.19 52 0.54 -46
511, Sz. = f (f) 5,2' 5.., = f (f)

Ic=2mA, VcE =10v,Zo=50n Ic =2 rnA, VCE = 10V, Zo= son
+j50 90 0
1800 o
-135 0 -45 0
- j50 -90 0
572 Siemens
BFR 35AP
Ic = 5 mA, VCE = 10 V, Zo = 50 Q
f Sl1 ~, S'2 ~2
0.1 0.83 - 19 12.74 152 0.03 78 0.95 - 9
0.3 0.65 - 57 8.56 125 0.06 63 0.80 -25
0.5 0.49 - 84 6.35 107 0.08 58 0.67 -31
0.8 0.31 -112 4.29 89 0.10 55 0.56 -33
1.0 0.27 -129 3.53 82 0.13 57 0.54 -35
1.2 0.24 -144 2.97 77 0.14 57 0.51 -36
1.5 0.21 -167 2.45 67 0.16 58 0.50 -38
1.8 0.21 170 2.13 59 0.19 58 0.48 -43
2.0 0.22 155 1.96 54 0.21 58 0.47 -43
5", s", = f (f) 5'2, $;" = f (f)

Ie = 5 mA, VeE = 10V, Zo = 50 n Ie = 5 mA, VeE = 10 V, Zo = 50 n
90 0
____-r-_____ 2GHz
1800 o
-j50 -90 0
Siemens 573
BFR35AP
Ic = 10 rnA, VCE = 10 V, Zo = 50 n
f 5 11 8.!1 5,2 8.!2
0.1 0.75 - 28 18.20 142 0.02 74 0.88 -13
0.3 0.52 - 71 10.23 114 0.05 63 0.67 -27
0.5 0.37 - 99 7.00 99 0.07 63 0.56 -29
0.8 0.23 -129 4.57 84 0.09 63 0.50 -28
1.0 0.21 -146 3.72 78 0.12 65 0.48 -29
1.2 0.20 -163 3.11 74 0.13 65 0.47 -31
1.5 0.18 177 2.56 64 0.16 64 0.46 -34
1.8 0.19 157 2.19 57 0.19 63 0.46 -39
2.0 0.20 143 2.03 53 0.21 62 0.44 -39
Sl1,~=f(f) 5 ,2 ,5.., =1(f)

Ic = 10 rnA, VCE = 10V, 2'0=500 Ic = 10 rnA, VCE = 10V, Zo=50 0
90 0
--~
-------;--~
180 0 o
-j50 -90 0
574 Siemens
BFR35AP
Ic = 15 rnA, VCE = 10 V, Zo = 50 Q
f $" ~, $'2 ~2
0.1 0.64 - 37 19.16 140 0.02 72 0.85 -14
0.3 0.38 - 87 10.29 112 0.04 64 0.63 -26
0.5 0.28 -117 7.00 96 0.06 66 0.53 -26
0.8 0.19 -151 4.49 81 0.09 67 0.49 -25
1.0 0.19 -166 3.65 76 0.11 68 0.49 -27
1.2 0.19 180 3.09 71 0.13 67 0.47 -29
1.5 0.19 162 2.53 62 0.16 66 0.47 -32
1.8 0.21 145 2.15 55 0.19 65 0.47 -37
2.0 0.22 134 2.01 51 0.21 64 0.45 -38
~" 5,,2 = f If) 5'2, 5", = f If)

Ic = 15 mA, VCE = 10V, -4J = 50 n Ic=15mA, VcE =10V,Zo=50n
180 0 o
- j50 -90 0
Siemens 575
BFR35AP
Ic = 20 rnA, VCE = 10 V, Zo = 50 Q
f 8 11 S:z1 8 12 S:z2

0.1 0.58 - 45 20.30 135 0.02 71 0.82 -14
0.3 0.34 - 98 10.12 108 0.04 65 0.61 -23
0.5 0.27 -129 6.72 94 0.06 68 0.54 -23
0.8 0.20 -163 4.32 79 0.09 69 0.49 -49
1.0 0.20 -176 3.47 74 0.11 70 0.50 -25
1.2 0.21 173 2.93 69 0.13 69 0.50 -27
1.5 0.21 156 2.41 60 0.16 68 0.49 -30
1.8 0.23 140 2.05 53 0.19 67 0.49 -36
2.0 0.25 131 1.92 49 0.21 65 0.47 -37
5",~=flf) 5,2, 5" = f If)

Ie =20 rnA, VeE = 10V, Zo= 50n Ie = 20 rnA, VeE = 10V, Zo = 50n
+j50
ZGHz
-j50 -90·
576 Siemens
NPN Silicon RF Transistor BFR92P
• For broadband amplifiers up to 2 GHz and fast

non-saturated switches at collector currents from 0.5 to
20 mA.

(tape and reel)
BFR92P GF Q 62702 - F1 050 SOT-23
Maximum Ratings
Emitter-base voltage VEBO 2.5 V
Total power dissipation, TA ::; 25 DC2 ) Ptot 280 mW
Thermal Resistance
Junction - ambient1) RthJA ::;450 IKIW
1) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm
Siemens 577
BFR92P
DC characteristics
min typ max
Ic= 1 mA,Is=O
Collector-base cutoff current Icso !-lA
Vcs = 10 V, IE = 0 - - 0.05
Vcs = 20 V, IE = 0 - - 10
Emitter-base cutoff current I ESO - - 100 !-lA
VES = 2.5 V, Ic = 0
Ic=14mA, VcE =10V
Ic= 30 mA, Is =3 mA
578 Siemens
BFR92P
AC characteristics
min typ max
Ic= 5 mA, VCE = 10 V, f= 200 MHz - 3.B -
Ic=14mA, VcE =10V,f=200MHz - 5 -
Collector-base capacitance Geb - 0.5 0.7 pF
V CB = 10 V, VBE = Vbe = 0, f= 1 MHz

VCE = 10 V, VBE = Vbe = O,f= 1 MHz
Input capacitance G.bo - 0.9 - pF

VEB = 0.5 V, Ic = ie = 0, f= 1 MHz
Noise figure F dB
Ic=5mA, VCE = 6 V, f= 10 MHz, Zs=75Q - 1.5 -
Ic = 2 mA, VCE = 6 V, f= BOO MHz, Zs = Zsopt - 1.5 -
Ic = 3 mA, V CE = 10 V, f= 2 GHz, Zs = Zsopt - 3.9 -
Ic = 15 rnA, VCE = 6 V, f= BOO MHz,
Zs = 50 Q, ZL = ZLOPt
Transducer gain 1s.z1e1 2 - 11 - dB
Ic = 15 mA, VCE = 6 V, f= 1 GHz, Zo= 50Q
Linear output voltage V01 = Vo2 - 110 - mV
Ic = 15 mA, VCE = 10 V, diM =60 dB
f1 = B06 MHz, f2 = B10 MHz, Zs = ZL = 50 Q
Third order intercept point 1P3 - 23.5 - dBm
Ic=15mA, VcE =10V,f=BOOMHz
Siemens 579
BFR 92P
Total power dissipation Ptot = f (TAl Transition frequency fT = f (Jcl

rnW 6Hz
400 6
'1ot
v ..-
\300
f 4
V
V
1'\
200
1'\
3 I
1'\ I
'\
2
100 I
I
I
1,\
o \. o
o 50 100 150 0 ( o 10 20 rnA
Collector-base capacitance CCb = f (VcBl

VSE ~ Vbe = 0, f= 1 MHz
pF
1,0
~
\
\
0.5
.......
I"-...
- r-- r- r-
-
o
o 10 20 V
580 Siemens
BFR 92P

Ie = 2 rnA, VeE = 6 V, 2{, = 50 Q
f Fmin Gp (Fmin) rept RN N F50n Gp (F5onl
0.01 1.05 - (Zs = 150 Q) - - 3 -
Ie = 5 rnA, VeE = 6 V, Zo = 50 Q
f Fmin Gp (Fmin) rept RN N F50n Gp (F5onl
0.01 1.3 - (Zs'" 100Q) - - 1.6 -
0.8 1.7 14.3 0.25 58.5I 16.9 0.24 1.9 14
Noise figure F =f (Zsl

VeE = 6 V. f= 10 MHz
dB
4
IA
IAl
lLf_~O I ~_
r'c- m r-
F 3
~
V 1/
1 '\-- V 10mA
I I
2
\~-.l,1---
'" I J....1""
VsmA-
I\.. i-'"
~~
.."
?~
1mA -
o
o 100 200 300Sl
Siemens 581
BFR 92P
Circles of constant noise figure F= f (Zsl Noise figure F= f (lei

Ie = 5 rnA, VeE = 6 V, f= 800 MHz VeE = 6 V. f= 800 MHz, ZLopt (G)
dB
5
F
4
t
3
~ -;:::::.
Z~OQ ~ V
2
\ ~
\ I'-
~ Zpt
-j 50
o
o 10 20 rnA
-Ie
582 Siemens
BFR92P

Ie = 0.5 rnA, VeE = 1 V, ZO = 50 Q
f 8 11 8.11 8 12 8.12

0.10 0.967 - 12.3 1.83 168.2 0.050 81.5 0.990 - 6.7
0.15 0.956 - 18.4 1.82 162.3 0.075 77.4 0.982 -10.0
0.20 0.941 - 24.3 1.81 156.4 0.098 73.2 0.970 -13.0
0.25 0.923 - 30.2 1.78 150.8 0.120 69.3 0.955 -16.2
0.30 0.903 - 35.9 1.75 145.2 0.141 65.4 0.939 -19.1
0.40 0.859 - 47.0 1.68 134.7 0.177 58.2 0.902 -24.5
0.50 0.812 - 57.2 1.59 125.1 0.207 51.8 0.864 -29.4
0.60 0.765 - 67.2 1.51 116.1 0.231 46.2 0.826 -33.6
0.70 0.717 - 76.5 1.44 108.0 0.249 41.2 0.790 -37.4
0.80 0.686 - 85.5 1.36 100.3 0.265 36.3 0.757 -40.7
0.90 0.645 - 94.5 1.31 93.3 0.275 32.3 0.725 -43.8
1.00 0.610 -103.1 1.25 86.6 0.281 28.6 0.695 -46.4
Ie = 1 rnA, VeE = 1 V, ZO = 50 Q
f 8 11 8.11 8 12 8.12

0.10 0.938 - 16.4 3.51 165.6 0.050 79.4 0.981 - 9.4
0.15 0.917 - 24.5 3.45 158.7 0.073 74.4 0.962 -13.8
0.20 0.892 - 32.2 3.37 151.9 0.095 69.6 0.938 -17.9
0.25 0.862 - 39.7 3.26 145.5 0.114 65.1 0.910 -21.9
0.30 0.829 - 46.7 3.13 139.4 0.132 60.8 0.881 -25.5
0.40 0.763 - 60.1 2.88 128.5 0.160 53.5 0.819 -31.7
0.50 0.699 - 72.0 2.64 118.9 0.182 47.6 0.761 -37.0.
0.60 0.643 - 83.2 2.41 110.4 0.198 42.8 0.709 -41.2
0.70 0.591 - 93.4 2.22 102.9 0.209 38.9 0.665 -44.7
0.80 0.557 -103.0 2.05 96.1 0.219 35.5 0.626 -47.5
0.90 0.521 -112.6 1.92 89.8 0.225 32.9 0.591 -50.2
1.00 0.490 -121.7 1.79 84.0 0.229 30.8 0.559 -52.4
Siemens 583
BFR92P
Ic = 2 rnA, VCE = 6 V. .2iJ = 50 Q

f 8 11 8.11 ~2 8.12

0.1 0.91 - 15 6.49 161 0.03 79 0.97 -6
0.3 0.79 - 46 5.25 139 0.08 64 0.88 -22
0.5 0.66 - 71 4.49 120 0.11 55 0.77 -30
0.8 0.46 -102 3.29 98 0.13 47 0.64 -35
1.0 0.40 -119 2.80 88 0.15 46 0.60 -38
1.2 0.36 -134 2.43 80 0.15 45 0.56 -40
1.5 0.31 -156 2.03 69 0.17 48 0.53 -43
1.8 0.29 -178 1.77 60 0.19 49 0.51 -48
2.0 0.29 168 1.66 54 0.20 51 0.49 -49
St1,~=f(f) =
St2, ~1 f (f)
Ic=2mA, VcE =6v,4,=50n Ic =2 mA, VCE = 6 V, 4,=50n
90·
180· o
-j50 -90·
584 Siemens
BFR92P
Ic = 5 rnA, VCE = 6 V. Zo = 50 Q
f 5 11 5.!1 5 12 5.!2
0.1 0.80 - 24 12.96 150 0.03 75 0.92 -11
0.3 0.58 - 66 8.56 123 0.06 61 0.74 -29
0.5 0.44 - 97 6.27 106 0.08 58 0.59 -35
0.8 0.28 -128 4.19 88 0.11 57 0.49 -35
1.0 0.26 -144 3.45 81 0.13 59 0.49 -36
1.2 0.24 -160 2.93 74 0.14 58 0.45 -38
1.5 0.22 179 2.43 65 0.17 59 0.44 -40
1.8 0.23 159 2.08 57 0.20 59 0.43 -45
2.0 0.25 146 1.93 52 0.22 58 0.40 -46
St1,~=f(f) St2. 5.z1 = f (f)

Ic=5mA, VcE=6V,Zo=500 Ic=5 mA, VcE =6V, Za = 500
+j50 900
-j50 -90 0
Siemens 585
BFR 92P
Ic = 10 rnA, VCE = 6 V, 20 = 50 n
f 8 11 ~, 8 '2 ~2
0.1 0.66 - 35 18.62 140 0.03 73 0.85 -15
0.3 0.42 - 85 10.32 113 0.05 62 0.62 -31
0.5 0.32 -116 6.92 98 0.07 63 0.50 -33
0.8 0.22 -149 4.49 83 0.10 64 0.44 -31
1.0 0.21 -164 3.65 77 0.12 65 0.43 -32
1.2 0.21 -178 3.09 71 0.14 64 0.41 -34
1.5 0.21 164 2.54 63 0.17 63 0.41 -36
1.8 0.22 147 2.18 55 0.21 62 0.40 -41
2.0 0.24 136 2.02 51 0.22 61 0.38 -42
S".5",,=1(f) S,2. 5", = 1 (f)

Ic = 10 rnA, VCE = 6 \I, 20= 50 Q Ic = 10 rnA, VCE = 6\1, Zo = 50 Q
+j50 90 0
-j50 -90 0
586 Siemens
BFR92P
Ic = 15 mA, VCE = 6 V, Zo = 50 n
f 8 11 8.11 8 12 8.12

0.1 0.57 - 43 20.30 137 0.02 71 0.81 -16
0.3 0.35 - 95 10.53 109 0.05 54 0.58 -29
0.5 0.27 -127 7.00 95 0.07 66 0.48 -29
0.8 0.21 -162 4.49 80 0.10 67 0.43 -27
1.0 0.21 -174 3.65 75 0.12 68 0.43 -29
1.2 0.21 174 3.09 70 0.14 66 0.41 -31
1.5 0.22 158 2.54 61 0.17 65 0.41 -34
1.8 0.24 142 2.15 54 0.21 64 0.41 -40
2.0 0.26 133 2.00 50 0.23 63 0.39 -40
S,1,~=flf) =
S,2, 5,,1 f If)
Ie = 15 rnA, VeE = 6 II, Zo= 50 n le= 15 rnA, VeE = 6 V, Zo = 50 n
-j50 -90 0
Siemens 587
BFR92P
Ic = 20 rnA, VCE = 6 V. Zo = 50 Q
f 8 11 s;'1 8 12 s;'2

0.1 0.51 - 49 21.13 133 0.02 70 0.79 -16
0.3 0.32 -106 10.35 106 0.05 65 0.56 -27
0.5 0.27 -138 6.76 92 0.07 67 0.48 -27
0.8 0.22 -171 4.34 78 0.09 68 0.45 -25
1.0 0.22 179 3.49 74 0.12 69 0.44 -28
1.2 0.23 169 2.97 68 0.14 68 0.43 -30
1.5 0.24 153 2.43 60 0.17 66 0.43 -33
1.8 0.26 139 2.07 53 0.21 65 0.42 -39
2.0 0.28 131 1.93 48 0.22 64 0.40 -39
511,5,2 = f (f) 5,2, 5" = f (f)

Ie = 20 mA, VeE = 6 V, Zo = 50 Q Ie = 20 mA, VeE = 6V, Zo = 50 Q
90 0
180 0 o
-.i,?0 -90 0
588 Siemens
BFR 92P
Ic = 2 rnA, VCE = 10 V, Za = 50 Q
f 3" ~, 3 '2 ~2
0.1 0.92 - 14 6.46 161 0.03 80 0.98 - 6
0.3 0.81 - 43 5.28 140 0.07 66 0.90 -19
0.5 0.69 - 65 4.54 122 0.10 57 0.80 -27
0.8 0.48 - 95 3.35 99 0.12 49 0.68 -33
1.0 0.42 -111 2.87 90 0.14 48 0.64 -35
1.2 0.36 -125 2.45 83 0.15 47 0.61 -38
1.5 0.30 -146 2.07 71 0.16 49 0.58 -40
1.8 0.28 -170 1.81 62 0.18 50 0.56 -45
2.0 0.27 175 1.68 56 0.19 52 0.54 -46
5". Sz:, = f (f) 5 ,2 .5" =f(f}

Ie = 2 rnA, VeE = 10V, Zo = 50 n Ie = 2 rnA, VeE = 10V, Zo = 50 n
+j50 90 0
180 0 o
- j50 -90 0
Siemens 589
BFR92P
Ic = 5 rnA, VCE = 10 V, Zo = 50 n
f 8 11 &.11 ~2 &.12

0.1 0.83 - 19 12.74 152 0.03 78 0.95 -9
0.3 0.65 - 57 8.56 125 0.06 63 0.80 -25
0.5 0.49 - 84 6.35 107 0.08 58 0.67 -31
0.8 0.31 -112 4.29 89 0.10 55 0.56 -33
1.0 0.27 -129 3.53 82 0.13 57 0.54 -35
1.2 0.24 -144 2.97 77 0.14 57 0.51 -36
1.5 0.21 -167 2.45 67 0.16 58 0.50 -38
1.8 0.21 170 2.13 59 0.19 58 0.48 -43
2.0 0.22 155 1.96 54 0.21 58 0.47 -43
5 11 • $,2 = f (f) ~2. $,1 =f (f)

Ie = 5 rnA, VeE = 10V, 2Q = 500 Ie = 5 rnA, VeE = 10Y, 2Q = 500
90 0
-j50 -90 0
590 Siemens
BFR 92P
Ic = 10 rnA, VCE = 10 V. Zo = 50 Q
f $11 ~1 $12 ~2
0.1 0.75 - 28 18.20 142 0.02 74 0.88 -13
0.3 0.52 - 71 10.23 114 0.05 63 0.67 -27
0.5 0.37 - 99 7.00 99 0.07 63 0.56 -29
0.8 0.23 -129 4.57 84 0.09 63 0.50 -28
1.0 0.21 -146 3.72 78 0.12 65 0.48 -29
1.2 0.20 -163 3.11 74 0.13 65 0.47 -31
1.5 0.18 177 2.56 64 0.16 64 0.46 -34
1.8 0.19 157 2.19 57 0.19 63 0.46 -39
2.0 0.20 143 2.03 53 0.21 62 0.44 -39
s,,, s". = f (f) S,2, 50, = f (f)

Ic=10mA, VcE=10v,Zo=50n Ic = 10mA, VCE = 10V, Zo = 50 n
90 0
180 0 o
-j50 -90 0
Siemens 591
BFR92P
Ic = 15 rnA, VCE = 10 V, Zo = 50 n
f 511 5.!, 5'2 5.!2
0.1 0.64 - 37 19.16 140 0.02 72 0.85 -14
0.3 0.38 - 87 10.29 112 0.04 64 0.63 -26
0.5 0.28 -117 7.00 96 0.06 66 0.53 -26
0.8 0.19 -151 4.49 81 0.09 67 0.49 -25
1.0 0.19 -166 3.65 76 0.11 68 0.49 -27
1.2 0.19 180 3.09 71 0.13 67 0.47 -29
1.5 0.19 162 2.53 62 0.16 66 0.47 -32
1.8 0.21 145 2.15 55 0.19 65 0.47 -37
2.0 0.22 134 2.01 51 0.21 64 0.45 -38
5". ~ =f (f) =
5,2. 5", f (f)
Ie = 15 mA, VeE = 10V, Zo= 50n Ie = 15 mA, VeE = 10V, Zo = 50n
90 0
~--r--~
2GHz
-j50 -90 0
592 Siemens
BFR92P
Ic = 20 rnA, VCE = 10 V, Zo = 50 n
f S11 ~1 S12 ~2
0.1 0.58 - 45 20.30 135 0.02 71 0.82 -14
0.3 0.34 - 98 10.12 108 0.04 65 0.61 -23
0.5 0.27 -129 6.72 94 0.06 68 0.54 -23
0.8 0.20 -163 4.32 79 0.09 69 0.49 -49
1.0 0.20 -176 3.47 74 0.11 70 0.50 -25
1.2 0.21 173 2.93 69 0.13 69 0.50 -27
1.5 0.21 156 2.41 60 0.16 68 0.49 -30
1.8 0.23 140 2.05 53 0.19 67 0.49 -36
2.0 0.25 131 1.92 49 0.21 65 0.47 -37
5,1, s.", = f (f) 5,2, 5;,1 = f (f)

Ic = 20 rnA. VCE = 10V, Zo = 50n Ic =20 rnA. VCE = 10V, Zo = 50 n
90 0
-j50 - 90 0
Siemens 593
NPN Silicon RF Transistor BFR93A
• For low-distortion broadband amplifiers and oscillators

up to 2 GHz at operating currents from 5 to 30 mA.

(tape and reel)
BFR93A R2 Q 62702 - F1 086 SOT-23
Maximum Ratings
Total power dissipation, TA:S 25 OC2) Ptat 280 mW
Thermal Resistance
Junction - ambient 1) I RthJA I:s450 IKIW
594 Siemens
BFR 93A
DC characteristics
min typ max
Collector-emitter breakdown voltage \.I(BR)CEO 12 - - V
Ie=1 mA,IB=O
VeB = 5 \I, IE = 0
Emitter-base cutoff current lEBO - - 10 ~
VEB=2\1,Ie=0
Ie = 30 mA, VeE = 5 V
Collector-emitter saturation voltage VeEsat - 0.13 0.4 V
Ie = 50 mA, IB = 5 mA
Siemens 595
BFR93A
AC characteristics
min typ max
Transition frequency fr - 5.5 - GHz
Ic = 30 rnA, VCE = 5 V, f= 200 MHz
Collector-base capacitance Ceb - 0.55 - pF
VCB = 5 V, VBE = Vbe = 0, f= 1 MHz
Input capacitance C,bO - 2.1 - pF
VEB = 0.5 V, Ic = ic = 0, f= 1 MHz
VcE =10V, VBE = Vbe=O, f=1 MHz
Noise figure F dB
Ic= 5 rnA, VcE =8V, f= 10MHz,Zs=50n - 1.1 -
Ic= 5 rnA, VCE = 8 V, f= 800 MHz, Zs = Zsopt - 1.7 -
Ic = 30 rnA, VCE = 8 V, f= 800 MHz, Zs = Zsopt - 2.6 -
Ic = 30 rnA, VCE = 8 V, f= 800 MHz,
Zs = ZSOph ZL = ZLopt
Ic = 30 rnA, VCE = 8 V, f= 1 GHz, Zo = 50n
Linear output voltage V o1 = V o2 - 280 - mV
Ic= 30 rnA, VCE = 8 V, diM = 60 dB
f1 = 806 MHz, f2 = 810 MHz, Zs = ZL = 50 n
Ic = 30 rnA, V CE = 8 V, f= 800 MHz
596 Siemens
BFR93A
Total power dissipation p.o. = f (T,J Transition frequency fT = f (Ic)

rnW GHz
~ot
400 6
./
V
f..- - I--
t 300
/
/
200 1"-
1,\
/
'\
"- 2
/
100 I
'\
o '\. o
o 50 100 150 0[
o 10 20 30 40 50 rnA
-TA -Ie
Collector-base capacitance Ceb = f (VCB)

VSE = Vbe = 0, f= 1 MHz
pF
1.0
\
'\..
.........
........
0.5 '-
r-
o
o 10 20 V
-li(B
Siemens 597
BFR93A

Ie = 4 rnA, VeE = 8 V, Zo = 50 Q
f Fmin Gp (Fmin) r opt RN N Fson Gp (Fson)
0.01 0.8 - (Zs= 150Q) - - 1.1 -
Ie = 30 rnA, VeE = 8 V. Zo = 50 Q
f Fmin Gp (Fmin) Topt RN N Fson Gp (Fson)
0.01 2.0 - (Zs = 100 Q) - - 2.15 -
0.8 2.6 13.5 0.13 1108 19.3 0.41 2.85 13
Noise figure F = f (Iel

VeE =8 V. f= 10 MHz
dB
3
t 1,; .....
Z. =50Q" ..... VV
~
, ~
ZSopt
1'1-- /
"" .....
\ 1/
o
o 10 20 30 mA
-Ie
598 Siemens
BFR93A
Circles of constant noise figure F= f (Zs) Noise figure F=f(leJi

inZs-pJane,lc=30mA, VCE=BV, f=BOOMHz VCE = B V, f= BOO MHz,.ZLopt (G)
dB
3
Zs=50Q V
F
'Y vV
1 M
:;::v Zs·opt·
v;:::
"f:1--'
-j 50
o
o 10 20 30 rnA
-Ie
Noise figure F = f (Icl

VeE = B V, f= 2 GHz, ZLopt (G)
dB
6
F Zs=5011~
1\ J..--~
t I'.r-_
4
1\ Zs opt J..--I-
I\. 1-1-1-""
o
o 10 20 30 rnA
-Ie
Siemens 599
BFR93A

Ic = 5 rnA, VCE = 8 V, Zo = 50 Q
f 8 11 ~, 8 '2 ~2
0.1 0.74 - 45 13.5 150 0.033 69 0.93 -21
0.2 0.64 - 81 10.5 129 0.052 57 0.73 -30
0.5 0.49 -132 5.6 101 0.078 53 0.50 -56
0.8 0.45 -158 3.7 86 0.097 57 0.41 -37
1.0 0.44 -169 3.0 79 0.113 61 0.39 -39
1.2 0.43 -179 2.6 73 0.127 64 0.38 -40
1.5 0.41 169 2.1 65 0.145 66 0.42 -45
2.0 0.40 160 1.7 54 0.194 71 0.44 -48
St" 5:.2 =1 (f), Z-plane St2, 5:., = 1 (f)

Ic = 5 mA, VCE = 8 V. Zo = 50n Ic = 5 mA, VCE = 8V, Zo=50n
90·
-j50 -90·
600 Siemens
BFR93A
Ic = 30 rnA, VCE = 8 V. Zo = 50 Q
f 8 11 ~1 8 12 ~2
0.1 0.38 -105 27.6 125 0.021 64 0.69 -41
0.2 0.37 -138 16.5 107 0.032 66 0.41 -44
0.5 0.36 -170 7.2 90 0.066 73 0.26 -39
0.8 0.36 -178 4.6 80 0.101 74 0.21 -32
1.0 0.35 177 3.8 75 0.125 73 0.20 -40
1.2 0.34 173 3.2 71 0.147 72 0.20 -41
1.5 0.31 157 2.6 65 0.169 70 0.23 -43
2.0 0.30 152 2.1 55 0.228 69 0.28 -46
s", 5.z:, = f (f), Z-plane S,2. 5", = f (f)

Ie = 30 mA, VeE = 8 V, Zo = 50 Q Ie = 30 mA, VeE = 8 V, 2Q = 50 Q
+j50 90 0
-j50 -90 0
Siemens 601
NPN Silicon RF Transistor BFR93P
• For low--distortion'broadband amplifiers up to 1 GHz at

collector currents from .2 to 30 mA.

Type ·Marking Ordering code Package
(tape and reel)
BFR93P GG Q 62702-F1051 SOT-23
Maximum Ratings
Collector-emitterNoltage VCEO 15 V
Emitter-base voltage VESO 2.5 V
Total power dissipation, TA :0;25 °C2) Ptot 280 mW
Thermal Resistance
Junction - ambient1 ) RthJA I :0;450 K/W
For detailed dimensions see chapter Package Outlines.

602 Siemens
BFR93P
DC characteristics
min typ max
Collector-emitter breakdown voltage \t(SR)CEO 15 - - V
Ic= 1 mA,Is=O
Collector-base cutoff current Icso lJA
Vcs=10\/,IE=0 - - 0.05
Vcs = 20 \/, IE = 0 - - 10
Emitter-base cutoff current I ESO - - 100 lJA
VES = 2.5 V, Ic = 0
Ic = 25 mA, VCE = 5 V
Ic = 50 mA, 1s = 5 mA
Siemens 603
BFR 93P
AC characteristics
min typ max
Ic = 30 rnA, VCE = 5 V, f= 200 MHz - 5 -
Ic = 50 mA, VCE = 5 V, f= 200 MHz - 4.7 -
Collector-base capacitance Geb - 0.6 0.75 pF
VEB =0.5V,Ic =ie =0, f=1 MHz
VCE = 10 V, VBE = Vbe = 0, f = 1 MHz
Noise figure F dB
Ic=10mA, VcE =8V,f= 10 MHz, Zs = 75 Q - 1.7 -
Ic= 5 mA, VCE = 8 V, f= 500 MHz, Zs = Zsopt - 1.9 -
Ic = 10 mA, VCE = 8 V, f= 800 MHz, Zs = 50 Q - 2.4 -
Ic = 25 rnA, VCE = 8 V, f= 800 MHz,
Zs = Zsopt, ZL = ZLopt
Ic = 25 rnA, VCE = 8 V, f= 500 MHz, Zo = 50 Q
Ic = 25 rnA, VCE = 8 V, diM = 60 dB
f1 = 806 MHz, f2 = 810 MHz, Zs = ZL = 50 Q
Ic = 25 rnA, VCE = 8 V, f= 800 MHz
604 Siemens
BFR93P
Total power dissipation p.o. = f (TAl Transition frequency fT = f (IcI

Package mounted on alumina VCE = 5 V. f= 200 MHz
rnW GHz
400 6
~ot
5
/
V i'-
300
f
4
I
/
200 1'\
'\ 3 II
........
I
100 I
'\
o '\
o o
50 100 150°C o 10 20 30 40 50 rnA
-TA
Collector-base capacitance Ccb = f (VcBI

VBE = vbe=0,f=1 MHz
pF
1.5
1.0 \
\
\
"-
t'---
0.5
o
o 10 20 V
-Vca
Siemens 605
BFR 93P

Ie = 2 rnA, VeE = 8 V, Zo = SO 0.
f Fmin Gp (Fmin) T opt RN N Fson Gp (Fson)
GHz dB dB MAG lANG 0. - dB dB
0.01 1.0 - (Zs= 1S0Q) - - 1.6 -
Ie = 10 rnA, VeE = 8 V, Zo = SO 0.
f Fmin Gp (Fmin) Topt RN N Fson Gp (Fsonl
GHz dB dB MAG lANG 0. - dB dB
0.01 1.S - (Zs =900.) - - 1.7 -
0.8 2.3 - (Zs =Zsopt) - - 2.4 -
Noise figure F = f (Zs) Noise figure F= f (Id

VCE=BV,f=10MHz VCE = 8 V, f= BOO MHz, ZLopt (G)
dB dB
4 4
1 1 1/
Ic=30rnA 1/ 20/
F V / F
/ /
/ Zs=50Q I--~:::;
r
3
1\ / t 3
.A:::: V
/ I--: "Zs opt I-~
r- ,/ 10 ..-:V
",
I--f--
r- V
2
~~ .,
~ r-!-""' ~I-"""
I' ... ,... 2
r---
o o
o 100 200 300Q o 10 20 30 rnA
-Zs -Ie
606 Siemens
BFR93P

Ic= 5 rnA, VCE = 8 V, ZO = 50 !l
f 8 11 5.!1 8 12 5.!2

0.1 0.74 - 34 12.96 143 0.03 70 0.87 -14
0.3 0.51 - 92 7.50 113 0.06 55 0.65 -31
0.5 0.40 -125 5.13 97 0.08 55 0.54 -33
0.8 0.32 -157 3.35 78 0.10 57 0.48 -32
1.0 0.31 -171 2.71 72 0.12 59 0.48 -35
1.2 0.31 177 2.32 65 0.14 60 0.46 -38
1.4 0.31 166 2.05 59 0.16 62 0.45 -41
1.6 0.32 156 1.84 52 0.18 61 0.45 -46
1.8 0.33 146 1.64 47 0.20 61 0.45 -49
2.0 0.35 137 1.52 42 0.22 61 0.44 -52
5,10 ~ =f(f) 5,2. ~1 = f (f)

Ie =5 rnA, VeE =8 If, Zo= 500 Ie =5 mAo VeE = 8 If, Zo = 50 0
90 0
o n 180 0 o
-j50 -90 0
Siemens 607
BFR93P
Ic = 10 mA, VCE = 8 V. Zo = 50 Q
f 8" -,
S:!, 8'2 S:!2
0.1 0.58 - 49 18.73 133 0.03 68 0.77 -19
0.3 0.37 -108 9.17 105 0.05 60 0.53 -32
0.5 0.30 -139 5.92 90 0.07 63 0.45 -32
0.8 0.25 -170 3.85 76 0.10 65 0.41 -31
1.0 0.25 180 3.09 70 0.13 65 0.40 -34
1.2 0.26 169 2.63 64 0.15 64 0.39 -37
1.4 0.26 160 2.33 58 0.17 64 0.38 -40
1.6 0.28 151 2.07 52 0.20 62 0.38 -44
1.8 0.29 142 1.84 48 0.22 61 0.38 -47
2.0 0.31 133 1.72 43 0.24 60 0.36 -49
5,1, 5z! = f If) 5,2, 5.21 = f If)

Ie = 10 rnA, VeE = 8 \I, 4> = 50 Q Ie = 10 rnA, VeE = 8 \I, 20=50 Q
-j50 -90 0
608 Siemens
BFR93P
Ic = 20 rnA, VCE = 8 V. Zo = 50 n
f ~1 ~1 5 12 ~2
0.1 0.41 - 64 22.91 123 0.02 67 0.67 -22
0.3 0.28 -123 9.89 98 0.05 66 0.46 -30
0.5 0.25 -151 6.24 86 0.07 68 0.40 -30
0.8 0.23 -179 4.03 74 0.11 68 0.37 -28
1.0 0.23 172 3.22 69 0.13 68 0.37 -32
1.2 0.25 164 2.74 63 0.16 66 0.35 -35
1.4 0.25 155 2.41 57 0.18 66 0.35 -38
1.6 0.27 147 2.14 51 0.20 63 0.35 -43
1.8 0.28 139 1.92 47 0.23 61 0.35 -46
2.0 0.30 131 1.79 42 0.25 60 0.33 -48
~"Sa=f(f) ~2' S:z, =f (f)

Ic = 20 mA, VCE=S V, Zo =500 Ic = 20 mA, VCE=SII, Zo= 500
90·
-jSO -90·
Siemens 609
BFR 93P
Ic = 25 rnA, VCE = 8 V. Zo = 50 Q
f 8 11 8..!1 8 12 8..!2

0.1 0.37 - 68 23.71 120 0.02 67 0.64 -22
0.3 0.26 -127 9.89 97 0.05 67 0.44 -29
0.5 0.24 -154 6.20 85 0.07 70 0.39 -28
0.8 0.22 179 3.98 73 0.11 69 0.37 -27
1.0 0.23 170 3.18 68 0.13 68 0.37 -31
1.2 0.24 162 2.71 62 0.16 66 0.36 -35
1.4 0.25 153 2.37 57 0.18 66 0.36 -37
1.6 0.27 146 2.11 51 0.20 63 0.35 -42
1.8 0.28 138 1.89 47 0.23 62 0.35 -46
2.0 0.30 130 1.77 42 0.25 60 0.34 -48
S",~=f(f) S,2, 5:>, = f (f)

Ie = 25 rnA, VeE = 8 V, Zo = 50 n Ie = 25 rnA, VeE = 8 V, Zo =50 n
-j50 -90 0
610 Siemens
NPN Silicon RF Transistor BFR 106
• For low-noise, high-gain amplifiers

• For linearbrdadband amplifiers
• Special application: antenna amplifiers

(tape and reel)
BFR 106 R7 Q 62702 - F1219 SOT-23
Maximum Ratings
Junction temperature Ii 150 °c
Thermal Resistance
Junction - ambient 1) IRthJA I :5300 IKIW
Siemens 611
BFR 106
DC characteristics
min typ max
Collector-emitter breakdown voltage \l(SR)CEO 15 - - V
Ic=1 mA,Is=O
Vcs = 10 V, IE = 0
Emitter-base cutoff current I Eso - - 10 ~
VEs=2V, Ic=0
Ic= 5mA, VcE =6V 25 - -
Ic=30mA, VcE =6V 25 90 -
Ic = 50 mA, Is = 5 mA
612 Siemens
BFR 106
AC characteristics
min typ max
Transition frequency fT - 3.7 - GHz
Ic = 30 rnA, VCE = 6 V, f= 200 MHz
Vcs=10V, VSE=Vbe=0,f=1 MHz
VEB = 0.5 V, Ie = ic = 0, f= 1 MHz
VeE = 10 V, VSE = Vbe = 0, f= 1 MHz
Noise figure F - 3.6 - dB
Ie = 30 rnA, VeE = 6 V, f= 800 MHz, Zs = Zsopt
Ie = 30 rnA, VeE = 6 V, f= 800 MHz,
Zs = 50 n, ZL = ZLopt
Unear output voltage Vol = Vo2 - 250 - mV
Ie =30 rnA, VeE = 6V, "'M
= 60 dB
fl =806 MHz, f2 =810MHz,Zs=ZL=50n
Siemens 613
NPN Silicon RF Transistor BFR 193
• For low-noise, high-gain amplifiers up to 2 GHz.

• For linear broadband amplifiers.
• fT = 8 GHz.
F= 1.2 dB at 800 MHz.

(tape and reel)
BFR 193 RC Q 62702- F1218 SOT-23
Maximum Ratings
Collector-emitter voltage, VBE = 0 VCES 20 V
Total power dissipation, TA ~ 50 °C2} Ptot 400 mW
Thermal Resistance
Junction - ambient 1) I RthJA I ~250 IKIW
614 Siemens
BFR 193
DC characteristics
min typ max
Ic = 1 mA, IB = 0
Collector-emitter cutoff current ICES - - 100 I1A
VCE = 20 V, VBE = 0
Collector-base cutoff current IcBo - - 50 nA
VCB = 10 V, IE = 0
Emitter-base cutoff current lEBO - - 1 I1A
VEB = 1 V, Ic = 0
Ic= 5mA, VcE =8V - 90 - -
Ic=30mA, VcE =8V - 100 -
Ic = 50 mA, IB = 5 mA
Siemens 615
BFR 193
AC characteristics
min typ max
Ic= SmA, VCE = 8 V, f= 200 MHz - 3.S -
Ic = 30 rnA, VCE = 8 V, f= 200 MHz - 7 -
Collector-base capacitance Ccb - 0.66 - pF
Vce = 10 V, VeE = vbe = 0, f= 1 MHz
VcE =10V, VeE =Vbe=0,f=1 MHz
VEe = O.S V, Ic = ic = 0, f= 1 MHz
VCE = 10 V, VeE = Vbe = 0, f= 1 MHz
Noise figure F dB
Ic= SmA, VcE =8V,f= 10MHz,Zs=7Sn - 0.8 -
Ic = 30 rnA, VCE = 8 V, f= 800 MHz, Zs = Zsopt - 1.7 -
Ic =30 rnA, VCE = 8 V, f= 1 GHz,Zs=Son - 2 -
Power gain Gpe - 13.S - dB
Ic = 30 rnA, VCE = 8 V, f= 800 MHz,
Zs = SO n, ZL = ZLOPt
Transducer gain 15.21e1 2 - 11.S - dB
Ic = 30 rnA, VCE = 8 V, f= 1 GHz, Zo = SO n
Linear output voltage Vol = Vo2 - 2S0 - , mV
Ic =40 rnA, VCE = S V, diM = 60 dB
fl = 806 MHz, f2 = 810 MHz, Zs = ZL = SO n
Ic = 40 rnA, VCE = S V, f= 800 MHz
616 Siemens
BFR 193
Total power dissipation p.o. = f (T,J Transition frequency fT = f (Ie)

mW GHz
500rT'-"-''-"-''-",,,, 10
I I
Ptot VeE =8V l -
I 400~4-~~+4~~~4-~~ ~ '/
.....
V
,,-I---I -
5V
~V
'"
3V
'I
4 I
/
II
50 100 150 0 [ 10 20 30 40 50 rnA

~/r
Collector-base capacitance CCb = f (VCB)

VBE =vbe=0,f=1MHz
pF
1.0
0.5
"'-
-- r-
10 20 V
Siemens 617
BFR 193

Ie = 10 rnA, VeE = 8 V, 4J = 50 Q
f Fmin Gp (Fmin) r opt RN N FSOQ Gp (Fson>
0.01 1 - (Zs = 75 Q) - - 1.05 -
0.8 1.25 13.5 - - - 1.35 12.4
2.0 2.4 7 - 1= - - - -
Ie = 30 rnA, VeE = 8 V, Zo = 50 Q
f Fmin Gp (Fmin) r opt RN N FSOQ Gp (Fson>
0.01 1.65 - (Zs = 50 Q) - - 1.65 -
0.8 1.7 14.2 - - - 1.95 13.3
2.0 2.7 7.5 - 1= - - - -
=
Noise figure F f (Iel Noise figure F = f (Iel
VcE=BV, f= 10 MHz Power gain G = f (Iel
VCE = B V, f= BOO MHz, ZLopt (G)
dB dB dB
3 4 W
Zs=1S0Q
/
F / F 3 Zs opt (F) --'-1 S (j
/ - - -(j
2 ,.
--
/" "
Zs= SOQ
7SQ /'" ...."

1 2
/ 1 'I -I
I
1
.... 1o
1
\
~--
-
I
,/
~rsOQ
~ ....
1
*'"
i-F
.....r--r
_-tTl
Zs opt
-
Zs=SOQ.... ;;>~
~
o o o
o 10 20 30mA o 10 20 30mA
- - - - i.... Ie --_
.. Ie
618 Siemens
BFR 193
Power gain Gms. 15,'e1 2 = 1 (Ie! Power gain Gms. 15,'e1 2 = 1 (Ie)
VeE = 8 V, f= 200 MHz, Zo = 50 n VeE = 8 V, f= 500 MHz, Zo = 50 n
dB dB
30 30
I.
6 ms
/
,/
"-!""z
15 21,1
- 6 ms
V
- 15 21,1 2
10 10
5Z1 , 1
6 ms = 1 s;:-
I 6ms =1521
51Z,' 1
I I 1
o a
o 10 20 30 40 SOmA a 10 20 30 40 SOmA
---1,,-' Ie
Power gain Gma• Gms• 15,'eI2 =1(Ie! Power gain Gma• 15,'e1 2 =1 (Ie!
VeE = 8 V, f= 800 MHz, Zo = 50 n VeE = 8 V, f= 1.5 GHz, Zo = 50 n
dB
20 20
I !
6 ms 6 mu
/~
r-
15z1,1 2
6 mu
10 10
1521 ,1 2
/ I
ms- -521
I I
- - G _1 512 '1
, - 6 ma = 1521 '1 IK-hZ-1)
- I--
1 '[ 512 , 1 1 1
-1 5 Z1'1
/KC1
I 1- )1-
- 6 I--
lOla -I 51r :K- K 1
o a
o 10 20 30 40 SOmA a 10 20 30 4iJ SOmA
- - - I. . -Fc
Siemens 619
BFR 193
Power gain Gma• Gms.I5,'eI 2 =f(f) Power gain Gma• Gmso 15,'e1 2 = f (f)
Ie = 5 rnA, VeE = 8 V, Zo = 50 n Ie = 10 rnA, VeE = 8 V, Zo= son
dB dB
30 30
"-
~
r-...." " "-
'\
"
6 ms
"-"
......... 6 ms
"- - \ 1\
"- - 1521.1 2 \
1----1521.12 -
1\ 6 ma f--
~ma r-- '\
10 10
'\. "' 6 ms '\' 6 ms
.'\ '\
I5521 .1
f- 6 ms = 1521 .1
512•
I- 6 ma '" 1521 .1 (K-fk2=1,
" \
\. 6 ms =
12 •
= I~~~:I ~K,~,2111
l\.
oI-
0.1
1 5,2 • I ·1 I 1111
0.5
.. f
"
2 3 GHz
o
0.1
6 ma
0.5
.. f
2 3 GHz
Power gain Gma• Gms• 15,'e1 2 = f (f) Power gain Gma• Gms• 15,'e1 2 =f (f)
Ie =20 rnA, VeE = 8 V, Zo= son Ie = 40 rnA, VeE = 8 V, ZO =50 n
dB dB
30 :::--... 30
1'\.'\
'\."\ 6 ma '\
6 ms '\ 6ms
1521.1 2 \ '\
,\\
1 20
r-- 1521.1~ \
6ma
\.
10
f--6ms = 155,2•
~
I .
""
.'\
'\" 6ms
t-- 6ma = 1521 .1 (K_II<-2_1l- ~

r--
oI - I 151~. 111111-
0.1 0.5 2 3GHz
.. f
620 Siemens
BFR 193

Ic = 10 mA, VCE = 3 V, Zo = 50 Q
f S11 ~1 S12 ~2
0.10 0.594 - 64.8 20.60 137.8 0.031 64.3 0.770 - 31.2
0.15 0.530 - 87.0 16.80 125.1 0.039 59.3 0.643 - 38.6
0.20 0.484 -103.6 13.87 116.4 0.046 57.5 0.547 - 42.7
0.25 0.451 -116.9 11.67 109.8 0.051 57.1 0.478 - 44.9
0.30 0.431 -127.0 10.04 104.9 0.056 57.5 0.428 - 45.8
0.40 0.409 -142.4 7.80 97.5 0.066 59.4 0.363 - 46.2
0.50 0.397 -153.2 6.38 91.9 0.077 61.2 0.326 - 46.3
0.60 0.388 -161.6 5.38 87.3 0.087 62.7 0.302 - 46.3
0.70 0.386 -168.7 4.66 83.4 0.098 63.8 0.285 - 46.7
0.80 0.388 -174.1 4.13 79.7 0.109 64.5 0.275 - 47.2
0.90 0.390 -179.3 3.70 76.4 0.120 65.1 0.264 - 48.0
1.00 0.392 176.2 3.35 73.3 0.132 65.4 0.256 - 48.8
1.20 0.400 167.6 2.83 67.9 0.155 65.5 0.241 - 50.9
1.40 0.399 159.6 2.47 62.7 0.179 65.2 0.235 - 53.7
1.50 0.398 156.0 2.33 60.2 0.191 64.8 0.236 - 55.6
1.60 0.401 153.3 2.20 57.7 0.203 64.4 0.236 - 57.8
1.80 0.405 147.6 1.99 52.8 0.228 63.1 0.234 - 62.7
2.00 0.420 143.1 1.82 48.6 0.252 61.6 0.225 - 68.2
2.50 0.461 131.3 1.53 39.0 0.313 57.9 0.206 - 85.0
3.00 0.473 120.0 1.34 30.0 0.376 53.0 0.208 -100.0
Siemens 621
BFR 193
Ic = 30 rnA, VCE = 3 V, Zo = 50 Q
f 8 11 ~1 8 12 ~2
0.10 0.375 -101.9 29.20 122.8 0.023 65.8 0.564 - 46.0
0.15 0.355 -124.1 21.58 111.8 0.030 66.1 0.429 - 51.8
0.20 0.346 -138.3 16.90 105.0 0.036 67.9 0.348 - 54.0
0.25 0.340 -148.1 13.80 100.3 0.043 69.3 0.297 - 54.8
0.30 0.338 -155.1 11.65 96.7 0.049 70.5 0.261 - 54.6
0.40 0.338 -165.5 8.88 91.3 0.063 72.0 0.219 - 53.8
0.50 0.336 -172.6 7.19 87.2 0.077 72.7 0.196 - 53.3
0.60 0.334 -178.1 6.03 83.6 0.091 72.8 0.182 - 53.1
0.70 0.336 177.0 5.20 80.4 0.104 72.5 0.172 - 53.7
0.80 0.338 173.5 4.60 77.3 0.118 72.1 0.166 - 54.6
0.90 0.344 169.7 4.11 74.6 0.132 71.5 0.159 - 55.6
1.00 0.347 166.4 3.71 72.0 0.146 70.7 0.153 - 56.9
1.20 0.358 159.7 3.13 67.2 0.173 69.1 0.141 - 59.5
1.40 0.359 152.7 2.73 62.5 0.200 67.2 0.136 - 62.5
1.50 0.359 149.4 2.57 60.2 0.213 66.3 0.138 - 64.8
1.60 0.361 147.5 2.43 58.0 0.227 65.2 0.139 - 67.5
1.80 0.362 142.8 2.20 53.5 0.253 62.9 0.138 - 74.1
2.00 0.380 139.3 2.01 49.5 0.278 60.6 0.131 - 81.9
2.50 0.419 128.7 1.68 40.5 0.340 55.1 0.117 -105.4
3.00 0.431 118.8 1.47 31.6 0.398 49.3 0.125 -122.4
622 Siemens
BFR 193
Ic = 5 mA, VCE = 5 V, Zo = 50 n
f $11 5.<1 $12 5.<2
0.10 0.762 - 45.7 13.63 148.8 0.036 68.4 0.885 ~20.5
0.15 0.698 - 64.3 12.06 136.9 0.048 61.1 0.798 -27.3
0.20 0.643 - 80.1 10.57 127.4 0.056 56.1 0.716 -32.0
0.25 0.597 - 93.2 9.26 119.9 0.063 53.0 0.649 -35.1
0.30 0.560 -104.4 8.18 113.8 0.068 51.1 0.594 -37.0
0.40 0.515 -122.1 6.56 104.5 0.076 49.6 0.516 -39.0
0.50 0.485 -135.6 5.44 97.5 0.083 50.0 0.468 -40.0
0.60 0.470 -146.3 4.65 91.7 0.090 51.3 0.436 -40.7
0.70 0.460 -155.3 4.06 86.8 0.097 52.7 0.415 -41.4
0.80 0.456 -162.4 3.60 82.5 0.104 54.1 0.399 -42.0
0.90 0.454 -169.4 3.24 78.4 0.112 55.6 0.386 -43.0
1.00 0.454 -175.5 2.94 74.7 0.120 57.0 0.375 -43.9
1.20 0.458 174.0 2.50 68.2 0.137 59.4 0.360 -46.3
1.40 0.461 164.5 2.18 62.4 0.155 61.1 0.351 -49.4
1.50 0.458 160.4 2.05 59.7 0.166 61.9 0.350 -51.1
1.60 0.461 156.9 1.95 56.9 0.176 62.3 0.351 -53.1
1.80 0.466 149.9 1.77 51.8 0.199 62.7 0.349 -57.4
2.00 0.479 143.8 1.62 46.9 0.221 62.4 0.341 -62.4
2.50 0.519 129.6 1.35 36.9 0.284 61.0 0.320 -77.1
3.00 0.539 117.5 1.18 27.5 0.353 57.1 0.324 -91.7
5", Sz. =f If} 5,2, 5.>, =f If)

Ie = 5 rnA, VeE = 5 V. Zo =50 n Ie = 5 rnA, VeE = 5 V. Zo = 50 n
+j50 900
-j50 -90 0
Siemens 623
BFR 193
Ic = 10 rnA, VCE = 5 V. Zo = 50 n
f 5.1 ~1 5 12 ~2
0.10 0.620 - 61.0 20.54 139.2 0.031 65.2 0.787 -29.7
0.15 0.547 - 82.5 16.91 126.6 0.040 60.0 0.664 -37.2
0.20 0.497 - 99.3 14.07 117.6 0.046 57.7 0.568 -41.4
0.25 0.459 -112.3 11.90 111.0 0.051 57.0 0.498 -43.6
0.30 0.434 -122.8 10.25 105.9 0.057 57.3 0.446 -44.7
0.40' 0.407 -138.9 7.99 98.3 0.066 58.8 0.379 -45.4
0.50 0.390 -150.4 6.53 92.6 0.076 60.5 0.339 -45.4
0.60 0.384 -159.4 5.52 87.9 0.087 62.0 0.315 -45.4
0.70 0.379 -166.9 4.79 83.9 0.098 63.1 0.299 -45.7
0.80 0.379 -172.8 4.23 80.2 0.109 63.7 0.286 -46.1
0.90 0.382 -178.6 3.79 76.7 0.120 64.4 0.276 -46.8
1.00 0.385 176.2 3.44 73.5 0.131 64.7 0.267 -47.4
1.20 0.391 167.2 2.91 67.9 0.154 64.7 0.253 -49.5
1.40 0.393 158.5 2.53 62.7 0.177 64.4 0.245 -52.3
1.50 0.392 154.9 2.38 60.2 0.189 64.1 0.246 -53.9
1.60 0.395 152.0 2.26 57.6 0.201 63.6 0.246 -55.9
1.80 0.402 145.9 2.05 52.9 0.226 62.3 0.244 -60.5
2.00 0.415 140.9 1.87 48.4 0.249 60.8 0.236 -65.8
2.50 0.457 128.0 1.56 38.6 0.310 57.0 0.213 -81.2
3.00 0.477 117.6 1.37 29.3 ·0.370 52.1 0.217 -96.3
8", s..:. =f (f) 8,2' 8.2, =f (f)

Ic =10 rnA, VCE =S V; Zo= son Ic =10 rnA, VCE = SV; Zo=son
-j50 -900
624 Siemens
BFR 193
Ic = 30 rnA, VCE = 5 V. zo = 50 n
f 8" 8;;, 8 '2 8;;2
0.10 0.403 - 93.0 29.73 124.4 0.023 65.7 0.588 - 44.1
0.15 0.363 -115.9 22.16 113.1 0.030 65.3 0.452 - 50.1
0.20 0.346 -131.4 17.44 106.0 0.036 66.8 0.368 - 52.4
0.25 0.335 -142.0 14.29 101.2 0.043 68.3 0.314 - 53.1
0.30 0.327 -150.2 12.07 97.5 0.049 69.5 0.277 - 53.0
0.40 0.324 -161.7 9.21 92.0 0.063 70.9 0.232 - 52.1
0.50 0.319 -169.8 7.44 87.7 0.076 71.7 0.208 - 51.4
0.60 0.320 -176.2 6.25 84.1 0.090 72.0 0.194 - 51.2
0.70 0.321 178.8 5.40 80.8 0.104 71.8 0.184 - 51.6
0.80 0.323 174.5 4.76 77.8 0.117 71.3 0.176 - 52.1
0.90 0.327 170.2 4.25 74.9 0.131 70.7 0.170 - 53.0
1.00 0.332 166.2 3.85 72.2 0.144 70.0 0.163 - 53.9
1.20 0.340 158.8 3.25 67.3 0.171 68.4 0.152 - 56.4
1.40 0.346 151.3 2.83 62.6 0.197 66.5 0.145 - 59.5
1.50 0.344 148.5 2.66 60.4 0.211 65.6 0.147 - 61.2
1.60 0.347 146.0 2.52 58.1 0.224 64.4 0.148 - 63.6
1.80 0.351 141.1 2.28 53.7 0.250 62.1 0.147 - 69.5
2.00 0.367 137.1 2.08 49.4 0.275 59.8 0.140 - 77.0
2.50 0.408 125.9 1.74 40.4 0.335 54.3 0.120 - 98.2
3.00 0.431 116.6 1.52 31.1 0.392 48.5 0.129 -115.6
s", s", = f (f) =

S,2' s", f (f)
Ie = 30 rnA, VeE = 5 V, Zo = 50 n Ie = 30 rnA, VeE = 5 V, Zo = 50 n
-j 50 -90 0
Siemens 625
BFR 193
Ic = 50 rnA, VCE = 5 V, Zo = 50 Q
f ~1 5.11 512 5.12

0.10 0.358 -106.3 31.26 120.1 0.022 66.9 0.518 - 48.1
0.15 0.337 -128.1 22.75 109.7 0.028 67.9 0.390 - 53.3
0.20 0.330 -141.8 17.72 103.3 0.035 69.9 0.314 - 54.9
0.25 0.325 -151.1 14.43 98.9 0.042 71.4 0.268 - 55.2
0.30 0.322 -158.2 12.16 95.5 0.049 72.4 0.236 - 54.8
0.40 0.322 -167.9 9.25 90.5 0.063 73.5 0.198 - 53.8
0.50 0.318 -174.8 7.46 86.4 0.077 73.7 0.178 - 53.0
0.60 0.321 179.8 6.25 83.0 0.091 73.7 0.166 - 52.9
0.70 0.322 175.0 5.40 79.9 0.106 73.2 0.158 - 53.6
0.80 0.325 171.4 4.76 77.0 0.120 72.4 0.152 - 54.2
0.90 0.330 167.4 4.25 74.2 0.134 71.7 0.146 - 55.4
1.00 0.335 163.9 3.84 71.5 0.148 70.8 0.140 - 56.6
1.20 0.344 156.8 3.24 66.8 0.175 68.9 0.130 - 59.5
1.40 0.348 149.6 2.82 62.1 0.202 66.8 0.124 - 63.0
1.50 0.346 146.7 2.65 59.9 0.216 65.7 0.125 - 64.8
1.60 0.349 144.6 2.51 57.6 0.230 64.4 0.127 - 67.4
1.80 0.355 140.0 2.27 53.3 0.256 62.0 0.128 - 73.9
2.00 0.368 135.9 2.08 49.1 0.281 59.5 0.121 - 82.5
2.50 0.411 125.0 1.73 40.0 0.341 53.8 0.105 -107.0
3.00 0.432 116.2 1.52 31.0 0.398 47.7 0.117 -124.8
$", Sn =f (f) $,2' ~, =f (f)

Ic =50 mA, VCE = 5 V. Zo= 50n I c =50mA, VcE =5V,Zo=50n
+j50
-j50 -90 0
626 Siemens
BFR 193
Ic = 5 mA, VCE = 8 V, Zo = 50 Q
f 8 11 ~, 8 '2 ~2
0.10 0.774 - 44.4 13.63 149.3 0.035 68.7 0.889 -20.0
0.15 0.709 - 62.6 12.11 137.5 0.047 61.5 0.804 -26.7
0.20 0.652 - 78.1 10.64 128.1 0.056 56.6 0.724 -31.3
0.25 0.602 - 91.0 9.35 120.6 0.062 53.3 0.657 -34.4
0.30 0.565 -102.0 8.26 114.5 0.067 51.3 0.602 -36.3
0.40 0.515 -119.9 6.65 105.1 0.075 49.9 0.525 -38.4
0.50 0.482 -133.3 5.52 98.0 0.082 50.1 0.476 -39.4
0.60 0.465 -144.3 4.72 92.3 0.089 51.3 0.444 -40.0
0.70 0.454 -153.5 4.12 87.4 0.096 52.8 0.422 -40.7
0.80 0.448 -160.9 3.66 83.0 0.103 54.1 0.407 -41.3
0.90 0.447 -167.9 3.29 78.9 0.111 55.6 0.394 -42.2
1.00 0.447 -174.3 2.99 75.2 0.119 57.0 0.382 -43.0
1.20 0.449 175.0 2.54 68.7 0.135 59.3 0.367 -45.3
1.40 0.450 165.4 2.22 62.9 0.154 61.0 0.358 -48.3
1.50 0.448 161.3 2.08 60.2 0.164 61.9 0.357 -50.0
1.60 0.453 157.5 1.98 57.4 0.174 62.3 0.357 -51.8
1.80 0.458 150.5 1.80 52.3 0.196 62.8 0.356 -56.1
2.00 0.468 144.4 1.64 47.4 0.219 62.5 0.347 -60.9
2.50 0.512 130.1 1.37 37.3 0.281 61.2 0.326 -75.2
3.00 0.529 117.9 1.20 28.0 0.348 57.5 0.329 -89.5
5",5.z:,=flf) 5,2. S:!, = f If)

Ic = 5 rnA, VCE = 8 V, Zo = 50 n Tc = 5 rnA, VCE = 8 V, Zo= 50n
+j50 900
-j50 -90 0
Siemens 627
BFR 193
Ic = 10 rnA, VCE = 8 V, Zo = 50 n
f 811 S:!, 8'2 S:!2
0.10 0.642 - 58.2 20.47 140.2 0.031 65.6 0.796 -28.8
0.15 0.564 - 79.1 16.98 127.6 0.040 60.3 0.676 -36.2
0.20 0.507 - 95.6 14.19 118.5 0.046 57.9 0.580 -40.4
0.25 0.466 -108.4 12.03 111.9 0.052 57.1 0.510 -42.7
0.30 0.437 -119.1 10.39 106.7 0.057 57.3 0.457 -43.8
0.40 0.405 -135.6 8.11 99.0 0.066 58.5 0.389 -44.5
0.50 0.384 -147.3 6.63 93.2 0.076 60.1 0.349 -44.6
0.60 0.375 -156.9 5.61 88.5 0.087 61.7 0.324 -44.5
0.70 0.371 -164.5 4.87 84.4 0.097 62.8 0.307 -44.8
0.80 0.369 -170.7 4.30 80.7 0.108 63.5 0.295 -45.2
0.90 0.371 -176.8 3.86 77.3 0.119 64.0 0.284 -45.8
1.00 0.372 177.7 3.50 74.0 0.130 64.4 0.275 -46.5
1.20 0.378 168.5 2.96 68.4 0.152 64.6 0.261 -48.4
1.40 0.383 159.6 2.58 63.2 0.175 64.2 0.252 -51.0
1.50 0.381 156.1 2.42 60.7 0.187 63.9 0.252 -52.6
1.60 0.385 152.9 2.30 58.2 0.199 63.4 0.253 -54.4
1.80 0.390 146.8 2.08 53.5 0.223 62.3 0.251 -58.9
2.00 0.404 141.7 1.90 48.9 0.246 60.8 0.242 --64.0
2.50 0.446 128.8 1.59 39.1 0.306 57.1 0.218 -78.8
3.00 0.466 117.9 1.39 29.8 0.366 52.4 0.220 -93.4
5 11 , Sz, = f (f) 5,2,50, = f (f)

Ic=10mA, VCE=8I/,Zo=50n Ic = 10 mA, VCE = 8 I/, Zo = 50 n
90 0
-j50
628 Siemens
BFR 193
Ic = 20 rnA, VCE = 8 V, Zo = 50 Q
f 8 11 ~, 8 '2 ~2
0.10 0.491 - 75.9 27.10 130.2 0.026 64.7 0.669 - 38.2
0.15 0.426 - 98.2 20.95 118.2 0.033 62.5 0.531 - 44.9
0.20 0.386 -114.3 16.78 110.4 0.039 63.0 0.440 - 47.8
0.25 0.358 -126.7 13.87 104.8 0.045 64.0 0.379 - 49.1
0.30 0.343 -136.0 11.79 100.7 0.051 65.2 0.336 - 49.3
0.40 0.329 -149.9 9.06 94.4 0.063 67.3 0.284 - 48.6
0.50 0.321 -159.5 7.35 89.8 0.075 68.5 0.255 - 48.1
0.60 0.314 -167.1 6.18 85.9 0.088 69.3 0.237 - 47.7
0.70 0.314 -173.5 5.34 82.5 0.100 69.6 0.224 - 47.9
0.80 0.316 -178.2 4.72 79.3 0.113 69.5 0.215 - 48.5
0.90 0.320 176.9 4.22 76.4 0.126 69.3 0.206 - 49.1
1.00 0.322 173.0 3.82 73.6 0.139 69.0 0.199 - 49.9
1.20 0.330 165.1 3.22 68.7 0.164 67.9 0.186 - 51.6
1.40 0.330 157.0 2.81 64.0 0.189 66.5 0.180 - 53.9
1.50 0.330 153.6 2.64 61.7 0.202 65.8 0.181 - 55.9
1.60 0.333 151.2 2.50 59.4 0.215 65.0 0.181 - 58.2
1.80 0.336 146.0 2.26 55.0 0.241 63.0 0.179 - 63.5
2.00 0.353 142.4 2.06 50.9 0.265 61.0 0.170 - 69.4
2.50 0.394 130.9 1.73 41.6 0.324 56.2 0.147 - 87.5
3.00 0.408 120.7 1.51 32.9 0.382 50.8 0.149 -102.8
S",~=f(f) 5,2, ~, = f (f)

Ic =20 rnA, VCE = 8 V, Zo = 50 n Ic =20 rnA, VCE = 8 V, Zo = 50 n
+j50
-j50 -90 0
Siemens 629
BFR 193
Ic = 40 rnA, VCE = 8 V, Zo = 50 n
f 8 11 ~1 8 12 ~2
0.10 0.395 - 92.9 31.23 122.5 0.023 65.6 0.553 - 45.3
0.15 0.351 -115.2 23.03 111.6 0.029 66.2 0.422 - 50.5
0.20 0.327 -130.1 18.02 105.0 0.036 68.1 0.343 - 52.3
0.25 0.313 -141.2 14.70 100.3 0.042 69.6 0.293 - 52.7
0.30 0.306 -149.0 12.41 96.8 0.049 70.6 0.259 - 52.2
0.40 0.300 -160.6 9.46 91.6 0.062 72.3 0.219 - 50.9
0.50 0.297 -168.5 7.65 87.5 0.076 72.7 0.198 - 50.1
0.60 0.293 -174.7 6.42 84.1 0.090 72.9 0.184 - 49.7
0.70 0.295 179.9 5.54 81.0 0.104 72.6 0.175 - 50.1
0.80 0.296 176.0 4.89 78.1 0.117 72.1 0.169 - 50.9
0.90 0.302 172.1 4.37 75.3 0.131 71.4 0.161 - 51.7
1.00 0.306 168.5 3.95 72.8 0.145 70.8 0.155 - 52.8
1.20 0.314 161.3 3.33 68.3 0.172 69.1 0.143 - 54.8
1.40 0.318 153.8 2.90 63.7 0.198 67.2 0.139 - 57.5
1.50 0.315 150.5 2.73 61.5 0.211 66.2 0.140 - 59.6
1.60 0.317 148.7 2.58 59.3 0.225 65.2 0.141 - 62.3
1.80 0.321 143.9 2.33 54.9 0.251 62.9 0.139 - 68.5
2.00 0.337 140.9 2.13 51.0 0.275 60.6 0.131 - 75.8
2.50 0.378 129.8 1.78 42.0 0.335 55.2 0.112 - 98.3
3.00 0.392 120.2 1.56 33.3 0.392 49.4 0.117 -115.1
$11' 5..2 = f (f) S.2, 5..1 = f (f)

Ic =40 rnA, VCE=8V, Zo= 50n Ic=40rnA, VCE=8\1,Zo=50n
+j 50 90 0
-j50
630 Siemens
NPN Silicon RF Transistor BFS 17P
• For broadband amplifiers up to 1 GHz at collector

currents from 1 to 20 mA.

(tape and reel)
BFS 17P MC Q 62702 - F940 SOT-23
Maximum Ratings
Emitter-base voltage VEBO 2.5 V
Peak collector current, fO? 10 MHz ICM 50 mA
Total power dissipation, TA:s 25 °C 2) Ptot 280 mW
Thermal Resistance
Junction - ambient 1) IRthJA I :s450 IKIW
Siemens 631
BFS 17P
DC characteristics
min typ max
Collector-emitter breakdown voltage \t(BR)CEO 15 - - V
Ic=1 mA,IB=O
Collector-base cutoff current ICBo I!A
VcB =15V,IE=0 - - 0.05
VCB = 25 V, h = 0 - - 10
Emitter-base cutoff current lEBO - - 100 I!A
VEB = 2.5 V, Ic = 0
DC current gain fl.,E -
lc= 2 mA, VCE = 1 V, 20 - 150
Ic=25mA, VCE=1 V 20 70 -
Ic=10mA,IB=1 mA
632 Siemens
BFS 17P
AC characteristics
min typ max
Ic= 2 rnA, VCE = 5 V, f= 200 MHz 1 1.4 -
Ic = 25 rnA, VCE = 5 V, f= 200 MHz 1.3 2.5 -
Collector-base capacitance G eb - 0.55 0.8 pF
Vce = 5 V, VeE = vbe = 0, f= 1 MHz
VcE =5V, VeE = Vbe=O, f=1 MHz
VEe = 0.5 V, Ic = ie = 0, f= 1.MHz
Output capacitance Gobs - - 1.5 pF
VcE =10V, VeE = Vbe = O,f= 1 MHz
Noise figure F - 3.5 5 dB
Ic = 2 rnA, VCE = 5 V, f= 800 MHz, Zs = 50n
Ic = 20 rnA, VCE = 5 V, f= 500 MHz, Zo = 50n
Ic = 14 rnA, VCE = 5 V, diM = 60 dB
f, = 806 MHz, f2 = 810 MHz, Zs =ZL = 50 n
Ic = 14 rnA, VCE = 5 V, f= 800 MHz
Siemens 633
BFS 17P
Total power dissipation Ptot = f (TAl Transition frequency fT =f (Icl

Package mounted on alumina VCE ~ 5 V, t~ 200 MHz
rnW GHz
400 3
Prot
,...
r 300
f 2
V
1"\ /
200
"I\.
r\.
I
100
"
o
o 50 100
+-
~"150 0(
o
o 10 20 30 rnA
-~ -Ie
Collector-base capacitance CCb = f (VCB)

VBE~ Vbe~O. f~1 MHz
pF
to
1
\.
0.5
~ i'-.
-- -- r-
o
o 10 20 V
-VcB'
634 Siemens
BFS17P

Ic = 2 rnA, VCE =; 5 V, Zo = 50 Q
f 8 11 ~1 8 12 ~2
0.1 0.83 - 30 5.96 147 0.03 73 0.95 - 7
0.3 0.58 ....: 76 3.69 118 0.07 53 0.82 -19
0.5 0.45 -106 2.69 100 0.08 49 0.74 -21
0.8 0.35 -142 1.84 79 0.10 51 0.71 -27
1.0 ·0.34 -160 1.53 71 0.11 54 0.70 -31
1.2 0.34 -175 1.33 64 0.12 57 0.69 -35
1.5 0.36 165 1.13 52 0.14 62 0.67 -43
1.8 0.37 147 0.97 44 0.17 66 0.67 -50
2.0 0.41 137 0.91 39 0.19 68 0.67 -54
5 11 • 5z! = f (f) ~2. 5,,1 = f If)

Ie = 2 rnA, VeE = 5 V. Zo = 50 n Ie =2 rnA, VeE = 5 V, Zo = 50 n
+j50 90 0
-j50 -90 0
Siemens 635
BFS 17P
Ic = 5 mA, VCE = 5 V, Zo = 50 Q
f 8" 8.2, 8 '2 8.22

0.1 0.63 - 44 10.78 134 0.03 69 0.87 -11
0.3 0.38 - 98 5.37 107 0.05 57 0.70 -20
0.5 0.32 -130 3.59 92 0.07 60 0.64 -21
0.8 0.28 -161 2.39 74 0.09 63 0.62 -25
1.0 0.29 -177 1.94 68 0.11 65 0.62 -29
1.2 0.30 170 1.67 61 0.13 66 0.60 -33
1.5 0.33 155 1.40 50 0.15 67 0.59 -41
1.8 0.35 140 1.18 43 0.19 69 0.60 -47
2.0 0.39 132 1.11 38 0.21 69 0.59 -51
5", $,,2 = f (f) 5'2, $", = f (f)

Ie = 5 mA, VeE = 5 \/, 20 = 50 Q Ie = 5 mA, VeE = 5 \/, Zo = 50 Q
90 0
-j50 -90 0
636 Siemens
BFS 17P
Ic = 10 rnA, VCE = 5 V. Zo = 50 Q
f 8 11 5.!1 8 12 5.!2

0.1 0.44 - 60 14.21 125 0.02 69 0.79 -14
0.3 0.29 -117 6.35 100 0.04 64 0.63 -19
0.5 0.27 -148 4.10 88 0.06 68 0.58 -19
0.8 0.26 -176 2.69 72 0.09 69 0.57 -23
1.0 0.28 173 2.18 66 0.12 70 0.57 -27
1.2 0.30 163 1.86 60 0.13 70 0.56 -31
1.5 0.32 150 1.55 49 0.16 69 0.55 -38
1.8 0.35 136 1.30 42 0.20 69 0.56 -45
2.0 0.38 128 1.22 37 0.22 69 0.56 -49
5,1. s.", =f (f) 5,2, 8,,1 =f (f)

Ic=10mA, VCE=s\l,Zo=son Ic = 10 rnA, VCE =S \I, Zo = son
90 0
-j50 -90 0
Siemens 637
BFS 17P
Ic = 15 mA, VCE = 5 V, Zo = 50 Q
f S11 8.21 S12 8.22

0.1 0.34 - 69 15.94 120 0.02 69 0.75 -15
0.3 0.26 -130 6.76 98 0.04 68 0.60 -19
0.5 0.26 -156 4.29 86 0.06 71 0.56 -19
0.8 0.26 179 2.80 70 0.09 71 0.55 -22
1.0 0.28 169 2.25 65 0.12 71 0.55 -27
1.2 0.30 160 1.92 59 0.14 71 0.55 -31
1.5 0.33 147 1.58 49 0.16 70 0.54 -38
1.8 0.36 135 1.34 41 0.20 70 0.54 -44
2.0 0.39 128 1.25 36 0.22 69 0.54 -48
S.h~=f(f) S.2, S:!1 =f (f)

Ic = 15 mA, VCE = 5 V. Zo = son Ic = 15 mA, VcE =5 V. Zo= son
-jSO -90 0
638 Siemens
BFS 17P
Ic = 20 mA, VCE = 5 V. Zo = 50 Q
f S11 ~1 S12 ~2
0.1 0.27 -77 16.69 117 0.02 70 0.72 -14
0.3 0.25 -138 6.88 96 0.04 69 0.58 -17
0.5 0.26 -161 4.34 84 0.06 72 0.54 -18
0.8 0.27 175 2.82 69 0.09 71 0.54 -22
1.0 0.29 166 2.26 64 0.12 72 0.54 -26
1.2 0.31 157 1.93 58 0.14 71 0.53 -29
1.5 0.34 146 1.59 48 0.16 70 0.53 -37
1.8 0.36 133 1.34 40 0.20 70 0.54 -44
2.0 0.40 125 1.26 35 0.22 70 0.53 -47
5". ~=f(f) 5,2. ~, = f (f)

Ie = 20 mA, VeE = 5 V, Zo = 50n Ie = 20 mA, VeE = 5 V, Zo = 50n
Siemens 639
PNP Silicon RF Transistor BFT92
• For broadband amplifiers up to 2 GHz at collector

currents up to 20 mA.
• Complementary type: BFR 92P (NPN).

(tape and reel)
BFT92 W1 Q 62702 - F1 062 SOT-23
Maximum Ratings
Peak collector current, f~ 10 MHz ICM 35 mA
Total power dissipation, TA :5 60 °C2 ) Ptat 200 mW
Thermal Resistance
Junction - ambient 1) I RthJA I :5440 IKIW
640 Siemens
BFT92
DC characteristics
min typ max
Collector-emitter breakdown voltage V(eR)CEO 15 - - V
Ic = 1 rnA, Ie = 0
Collector-base cutoff current Iceo - - 50 nA
Vce = 10 V. IE = 0
DC current gain ~E 20 50 - -
Ic = 14 rnA, VCE = 10 V
Siemens 641
BFT92
AC characteristics
min typ max
Transition frequency ~ - 5 - GHz
Ic = 14 rnA, VCE = 10V, f= 500 MHz
Collector-base capacitance Ccb - 0.6 - pF
VcB =10V, VBE=Vbe=0,f=1 MHz
VEB = 0.5 V,Ic = ic = 0, f= 1 MHz
Ic = 2 rnA, VCE = 10 V, f= 500 MHz
Ic = 14 rnA, VCE = 10 V, f= 500 MHz
642 Siemens
BFT92
Total power dissipation p.o. = f (TtJ Transition frequency fT = f (Iel

Package mounted on alumina VeE = 10V, f= 500 MHz
mW GHz
300 6
I-
5
/ r--.,
200 4
1\
i\
3
II
\
100 2
\
\
\
o 1\ o
o 50 100 150 0 ( o 10 20 30mA
-Ic
Collector-base capacitance Cob = f (VcBI

VBE = vbe=0,f=1 MHz
pF
1.5
1.0
0.5
~
.........
-
o
o 10 20 V
-VCB
Siemens 643
PNP Silicon RF Transistor BFT93
• For low-distortion broadband amplifiers up to 1 GHz at

collector currents from 2 to 30 rnA.
• Complementary type: BFR 93P (NPN).

(tape and reeQ
BFT93 X1 Q 62702 - F1 063 SOT-23
Maximum Ratings
Peak collector current, f?:: 10 MHz [CM 50 mA
Total power dissipation, TA :5 60 Dc;2) Ptot 200 mW
Thermal Resistance
Junction - ambient1) I RthJA I :5440 IKIW
644 Siemens
BFT93
DC characteristics
min typ max
Ic = 1 mA, Is = 0
Vcs= 5\1, IE=O
Ic=30mA, VcE =5V
Siemens 645
BFT93
AC characteristics
min typ max
Transition frequency fr - 5 - GHz
Ic = 30 mA, VCE = 5 V, f= 500 MHz
VCB = 5 V, VBE = vbe = 0, f= 1 MHz
VEB = 0.5 v,/c = ic = 0, f= 1 MHz
Ic = 2 rnA, VCE = 5 V, f= 500 MHz, Zs = ZSopt

Ic = 30 rnA, VCE = 5 V, f= 500 MHz,
Zs = ZSOPb ZL = ZLopt
646 Siemens
BFT93
Total power dissipation p.o. = f IT,.) Transition frequency fT = f (lei

mW GHz
300 6
V .......
/
200 4
/
1\ V
r\
\
/
100
\
\
o \ o
o 50 100 o 10 20 30 40 mA
-Ic
Collector-base capacitance COb = f (VCB)

VSE = Vbe=O, f= 1 MHz
pF
1.5
\
!\.
1.0
0.5
"- ..........
........
---
o
o 10 20 V
-VCB
Siemens 647
NPN Silicon Darlington Transistors BSP 50 ••• BSP 52

• Complementary types: SSP 60... SSP 62 (PNP)
E
c
B

BSP 50 BSP 50 062702 - Pl163 SOT-223
BSP 51 BSP 51 062702 - Pl164 SOT-223
BSP 52 BSP 52 062702 - Pl165 SOT-223
Maximum Ratings
Parameter Symbol BSPSO BSPSl BSPS2 Unit
Collector-emitter voltage VCER 45 60 80 V
Sase current IB 0.1 A
Total power disSipation, TA ~ 25·C I, Plo1 1.5 W
Junction temperature TI 150 ·C
Storage temperature range T" g -65 to + 150 ·C
Thermal Resistance
Junction - ambient 1) ~83.3 IKMI
.) Package mounted on an epoxy printed circuit board 40mm x 40mm x I.Smm
1 For detailed dimensions see chapter Package Outlines
648 Siemens
BSP 50 ... BSP 52
Characteristics
at TA = 25 'C, unless otherwise specified.
Parameter Unit
DC Characteristics
Collector-emitter breakdown voltage 1) V(BR)CER
Ic = 10mA, RBE = 4.5Mn SSP 50 45 - - V
SSP 51 60 - - V
SSP 52 80 - - V
Ic = 1OOIlA, 18 = 0 SSP 50 60 - - V
SSP 51 80 - - V
SSP 52 100 - - V
Emiller-base breakdown voltage V(BR)EBO

IE = 100IlA, IB = 0 5 - - V
Collector-emiller cutoff current ICES
VCE = VCERmax,VBE = 0 - - 10 llA
Emiller-base cutoff current lEBO
VEB =4 V, Ie =0 - - 10 Il A
Ic=150mA, VcE =10V 1000 - - -
Ie = 500 m~, VCE = 10 V 2000 - - -
Collector-emitter saturation voltage 2) VCEsal
Ic = 500 rnA, Ie =0.5 rnA - - 1.3 V
Ic = 1 A'/B =1 rnA - - 1.8 V
Base-emiller saturation voltage 2) VBEsal
Ic =500 rnA, 18 =0.5 rnA - - 1.9 V
Ic = 1 A'/B = 1 rnA - - 2.2 V
AC Characteristics
Ie = 100 rnA, VCE = 5 V, f= 100 MHz 'T - 200 - MHz
Switching times
Ic = 500 mA,IBI = 182 = 0.5 rnA ton . 400 - ns
(see Fig. 2 and 3) toll - 1500 - ns
1) Compare RBE for thermal stability

2) Pulse test conditions: t ~ 300115; D = 2%
Siemens 649
BSP 50 ... BSP 52
-2.2V +10V
18n
ljlS 9kn D.U.T.
-1r-
1S38~1
I Osc.
tr<Sns lpF ! tr<Sns
v<O.Ol ! Ze;;; 100kn
Rj = son
I
I
j
j
i
'-'-'-'-'-'-'-'-'-'- -.-.-.- ....
ICon = SOOmA.
-/Bon =IBoff =O.SmA
Fig.2 Switching time test circuit
OV --.----'~'--
10%
t
Fig.3 Switching time waveform
650 Siemens
BSP50 """ BSP52
Total power dissipation PIOI = f(TA) External resistance RaE = f(T,.)'

VCB = VCEma •
2.0 r-r--,--,-r--,--,-r.-'rr-....-,....,.-,
W -1- - - -- I- - -l-+-+--I- ~
--1-
I- -1-1-1-- - -1-+-1--1--4-+-1
\
- - -1--1-- '-t---t--t--f--l
h -1- --+--I--I---+-\-·H·- I- -~ I-
-1-"\ -I--r---- \
[\iI-I- f--I-
\
t---t--t-t-t- [S
-H-t-t-t---t--l---I---4
1\
1.0 f-- r-- f-- ~ -\-·H-I---l-l-
_.r-- -1\ - -- --j-t-t---t-t
-I-- - -r-- "\ I\,
- r-- .--f-- - \ -r- 5
f-- - I- -- --H-++-l
0.5 - - -1-- - -~l--
-- - - .--.- -- ..- - --1\ _. 1\
- - - 1 - - 1 - - . - -- -\--
--- - -- 1-1- -t--j-H---t---t-"f'd---t 1\
-- \
50 °C 150
-T,.
DC current gain hFE = f(le) Transition frequency fT = f (I c)

VCE = 10 V VCE = 5V
B( 87\ 811 819
10 1 r--_-r_--.--l""""_ .
=
-
1-- MHz ==1= -: =. - - r-4-l-l++l-H
- --
't
l
'" - 1 - - .- - .
-1-----
--
- . - --
-
5 h--
/
10~ 'i
r---- f----
5 i----- -
10~ rnA
-Ie
"RBE mo. for thermal stability
Siemens 651
BSP50 ... BSP52
Base-emitter saturation voltage Collector-emitter saturation voltage

Ie = ((VBE sal), IB-parameter Ie = ((VeE ••1), IB-parameter
mA
..
Be 87S 111m
10 1
Be !7S !77 879
Ie 5 Ie
5
'/
I I =0,5 mA-/
4mA!J
I IB =O,SmA
4mA
1/
r-
5 5
- f---
101 101
o 2V o 2 3V
-VCE!ot - VSEso '
652 Siemens
PNP Silicon Darlington Transistors SSP 60 ... SSP 62

• Complementary types: BSP 50 ... BSP 52 (NPN)
E
c
B

BSP60 BSP 60 062702 - P1166 SOT-223
BSP 61 BSP 61 062702 - P1167 SOT-223
BSP 62 BSP62 062702 - P1168 SOT-223
Maximum Ratings
Parameter Symbol BSP60 BSP61 BSP62 Unit
Collector-emitter voltage VCER 45 60 80 V
Base current IB 0.1 A
Total power dissipation, TA:s 25 ° C \) P IOI 1.5 IN
Storage temperature range Toig -65 to + 150 ·C
Thermal Resistance
Junction - ambient I) IRU1JA :s83.3 IKMt
\) Package mounled on an epoxy prinled circuil board 40mm x 40mm x 1.5mm
Mounling pad for Ihe colleclor lead min 6cm 2
.) For delailed dimensions see chapler Package Oullines
Siemens 653
BSP 60 .. , BSP 62
Characteristics
at TA = 25 'C, unless otherwise specified.
Parameter Unit
DC Characteristics
Collector-emitter breakdown voltage 1) V(BR)CER
Ic = 10mA, RBE = 4.SM Q BSP 60 45 - - V
BSP 61 60 - - V
BSP 62 80 - - V
Collector-base breakdown voltage V(BRlCBO
Ic = 100llA, IB = 0 BSP 60 60 - - V
BSP 61 80 - - V
BSP 62 100 - - V

IE = lOOIlA, 18 = 0 5 - - V
Collector-emitter cutoff current ICES
VCE = VCERmax , VBE = 0 - - 10 llA
VEB = 4 V, Ic = 0 - - 10 llA
Ic = lS0 mA, VCE = 10 V 1000 - - -
Ic = SOO mA, VCE = 10 V 2000 - - -
Ic = SOO mA, IB = O,S mA - - 1.3 V
Ic = 1 A,IB = 1 mA - - 1.8 V
Base-emitter saturation voltage 2) VBEsal
Ic = SOO mA, Ic = 0,5 mA - - 1.9 V
Ic = 1 A,/B = 1 mA - - 2.2 V
AC Characteristics
Ic = 100 mA, VCE =S V, f= 100 MHz - 200 - MHz
Switching times
Ic = SOO mA,IBl = IB2 = 0.5 mA ton - 400 - ns
(see Fig. 2 and 3) to" - 1500 - ns
1) Compare RBE for thermal stability

2) Pulse test conditions: t ;:;; 300llS; D = 2%
654 Siemens
BSP 60 ... BSP 62
+2.2V -10V
18Q
lps 9kQ D.U.T.
._._._._._._._._._._._._.- _....
-t~
U8~1 i
Osc.
i
t r <5ns lpF i t r <5ns
v<O.Ol !I Ze~ 100kQ
Rj =50Q i
i
i
_._._._._._._._._._.- _._._._ ...
I
Fig.2 Switching time test circuit
OV -~--:-:-':-
10%
t
Fig.3 Switching time waveform
Siemens 655
BSP60 ... BSP62
Total power dissipation Plol = ((TA ) External resistance RBE = ((TA)"

VCB = VCE max
2.0 ~~ r- ·-r-r-ro--Y-'---'-r-r-r-r.
W ~~4-j-4~-~f-
- -1- -1--H-4---!--c
P.o, H--I-+--l--- -1-
\
~ ~ - - ~ --1-1--1'-+-+-1--1-1
1.5 H+.!--t-+-+H---t-+-I-+--I---H I-
1\
-f\,
1
1\
1\ f\,
1.0 H-++--l---+-I[\-\I t-- t-- -1-4-1-1--
. -1\ 5
O. 5 ~i-l-i-l-j,--t---jf-+-_I-I\'1.-t--t--f--"
- ++-H-t--H-l---I---H\J-+-i \.
- - --- ~ - ·++--H-I--bM--l 1\
~ -- _. -[-1- .. -I--I---I-f--I--tl;\rl
o .- L. • -L-L_L-'---'----''-'---'----'--'' 1\
o 50 100 °C 150 50 °C 150
DC current gain hFE = ((I cl Transition frequency fr = ((lc)

VcE =10V VCE = 5 V
I,
1 'r--
: /
1---
10 1 L......J.....J....LU.J..lli.--l---LJL.ll1l.lL........L...LJ..J.J..I.llJ 10'L--L-L~UUliL__~~LLLUD
10' 10 1 10) 10~ mA 10 I 5 10 1 5 mA 10 I
-Ie -Ie
"RBE m" for Ihermal stability
656 Siemens
BSP60 ... BSP62
Collector-emitter saturation voltage Base-emitter saturation voltage

Ie = '(Vee ••,), Ie-parameter Ie = '(Vee 88')' Ie-parameter
mA
BC !7Smm B(81Smm
101
IC 5 'I Ie
'I 5 --
I :0,5 mA
t 4mA
t 10 :O,SmA
4mA
5 5
1- -
1--1- ~
- r- -
10
,
2V o 3V
- VCE •at
Siemens 657
SIPMOS N Channel MOSFET BSP88
Preliminary Data
• SIPMOS - enhancement mode
• Drain-source voltage Vos = 240V 5
• Continuous drain current I D = 0.29A
• Drain-source on-resistance RDS(on) = 8.00
• Total power dissipation PD = 1.5W

SSP 88 SSP 88 Q67000-S070 SOT 223
Maximum Ratings
Parameter Symbol Ratings Unit Conditions

Drain-gate voltage l.i>GR 240 V ~s =20kO
Continuous drain current ID 0.29 A TA =29°C
Pulsed drain current I Dpul. 1.16 A TA =25°C
Peak gate-source voltage V•• ±20 V aperiodic
Power dissipation PD 1.5 W TA =25°C
Operating and storage 7j
temperature range T.t. -55... +150 ·C
Climatic category 55... 150... 56 DIN IEC 68 part 1
Thermal resistance
Chip - air RthJA :583.3 KJIN
Chip - substrate rear side
658 Siemens
BSP88
Condition
Static characteristics
Drain-source V(BA)DSS 240 - - V Vas =OV
breakdown vottage ID =0.25 rnA
Gate threshold vottage VaS(th) 0.6 0.8 1.2 V VDS = Vas; ID =lmA
Zero gate vottage IDSS 1.0 20.0 JlA 1j =25°C; VDS =240V
drain current Vas =OV
IDSS - 10.0 200 JlA 1j =125°C;VDS =240V

Vas =OV
IDSS - - 100 nA 1j =25°C; VDS =100V

Vas =OV
Gate-source leakage current I ass - 10.0 100 nA Vas =20V, VDS =0V
Vas =4.5V
Drain-source on-state RDS(on) - 6.0 8.0 0 I D =0.29A
resistance
RDS(on) - 6.0 0 Vas =10V
I D =O.29A
Dynamic characteristics
Forward transconductance gl. 0.14 0.32 - S VDS 2:2" I D * R DSon max
ID =0.29A
Input capacitance CI •• - 90 140 pF Vas =OV

VDS =25V
Output capacitance Co •• 20 30 f =lMHz
Reverse transfer Cr •• 6 9
capacitance
Turn-on time ton t d(on) - 5 8 ns Vee =30V

(t on =t d(on) +t,) t, - 10 15 Vas =10V
Turn-off time t off t d(olf) - 30 40 I D =0.28A
Ras =500
(t off =t d(ofl) +t I) tl - 25 30
Reverse diode
Continuous aource
current
Is - - 0.29 A
Pulsed source current ISM - - 1.16 A
Diode forward on-vottage VSD - 1.0 1.3 V Vas =OV

'/ F =0.58A
Reverse recovery time trr - - ns VA =l00V, IF = 'D A

dl F Idt = 100A/Jls
Reverse recovery charge Orr - - - JlC VA =100v, 'F = 'D A

dl F Idt = l00A/Jls
Siemens 659
BSP88
Permissible power dissipation PIOI == I(TA) Typ. output characteristics 10 == I (Vos)
aSP88 B5P88
1.6 .'-- 0.65~~
W f-I- h -- - I -I - - - - I - -- A f-~'---l
14 -I;- -f\ .- - -- -- -- I-t-
0.55
P.o.
12 1--- 1-1- IS
1\
1-1- f----- H- I- -I-
10 0.50 -·3V
1.0 t-t_ -
t-!- ~~~
0.35
0.8
f-tt-!- .--. --.- 2.5V
- - -----._-:-+
0.30
-.-r-- '--1-·- 1\--

-~~= ]\
0.6 f- 0.25
'- --- -f- 0.20
0.4 '\
---+1---
Li-~~~
-:.;;.oIf--t--t---t- 2V
02 f- t--
-- -1\ t- f-!- 0.10 -._-+
l- t- t-.
o' - ' - - _~-=_L -
-'-
--- i~t± :b=f==l==-+~+----=4~ 1.5 V
0100...-'-.--"'--'-- - - - -
o 20 40 60 60 100 120 140·( 160 o 23456V8
-TA - - - V05
Permissible operating area fo == f (Vos) Typ. transfer characteristic To == f (VGs)

parameter: 0 == 0.01, Tc == 25·C parameter: Vos == 25 V, tp == 80 lIS, TJ == 25 ·C
0.60 r-- - .---,- .!l..~!' .~~-- - ... -- - -.--~

A I-- ~- - - - - - --- . - .-- -.-.1--
I 0.50 1-- t- - --- - - -- --I -

o
1--1- -1-1------- - ---
t 0.40 ;--1---+-+1--+--1---1-- ----1--1--
0.301--1-- -j-I-- -.- -- -- - ·-i-
1-+--+-1-1--1-- --1-1--- - - -
0.201-1--" -1-1-- -f-
f--I---/---ii-I--I-- --1--1----
0.10 I/ --.--- - - 1 -
... - - _.. - .. _-- _.... ----

1--[7--
o'---"--'-_-'__.'-_ _____ L_ L_
o 4 6 8 V 10
_VGs·
660 Siemens
BSP88
Typ. drain-source on-state resistance Drain-source on-state resistance

ROS(on) = ((10) ROS(on) = ((TI)
parameter: VGS , TI = 25°C parameter: VGS = ~.5 V, 10 = 0.29 A, (spread)
26r-r-r-r-r-T_BrS~P66 20 BSP 88
(l
ROSlon) 22
ROSlon) 16 I-- - - I-
V
20
I
16
1/
16 12 ._- II
14 1.1 /
12
- \- - 1 - -98%;- /
/
10 8 ~/ v-
8 - -
I......
p- ~ ~~ I--
6r_~~~l 4- ...... V
po
-]f
1-
4
o o ~ '--- ----" - -- -- '---

o 0.10 0.20 0.30 0.40 0.50 A 0.65 -80 -40 o 40 80 120°C 160
-10
Typ. transconductance gls = ((10) Gate threshold voltage VGS(lh) = ((Tj)

parameter: Vos = 25 V, Ip = 80 liS, Tj = 25°C parameter: VGS = Vos, 10 = 1 rnA
(spread)
0.45 - - - -- ---asp 88
._-- -- - ... - ---- --7 30 SP'-'8:6;:- -----y-T---,----r--,
.---,---.----.---r_;Br:
S 1--1---1--1--1-1- --- -- -V-r-:

//
V 1---+-4--1-- ---1-+--1---+--+--1
2.6 t-+-+--l-+-+---+-t--t-t-t-i
~I-!=~V~=_~--·~
VG S (I h) 2.4 I--+--+---j--t--jl----t---I--t---t--jl---t
2.21--1--1f--11---:1---t--t--I-+--t---t---I
gr ::: - 2.0 1---1-+-- t --\----+-'I---+---I--t---t--1
0.25 - ------ ----- -- --

--VJ:~
1.8 I----+-+-+_+_+_ I--+--I-+-t----I
0.20 -7--1--- - -- .---. ---

0.15- - - - - 1 - - - - 1 - - -----
f
0.10 1--/--1+-+-11---1-+---1-- - ! - - - ----
o 05 H--+-+- t-+-+--j-- -- -- .- -
o '--- _l_-'---'--'__ L--'-_---.J'_-'-----'---'
o 0.10 0.20 0.30 0_40 A 0.55 o 20 40 60 80 100 120°C 160
10 ~
Siemens 661
BSP88
Continuous drain current 10 = f(TA) Drain-source breakdown voltage

VIBR)OSS (T,) = b X VIBR)OSS (25°C)
0.30 r---;-_.,-_.,--:B::..:S.:,P_;c:88--,-_-,-_-y--, asp 88 '0

1.20
A ==~.- --t--t---l--t--l A
0.26 '" . ---j---+-~--t--l 1.16
~:~
b 1.14
1
0 '\K---r--- .
1.12
020 --1--"\ t 1.10
o18 ~- - - r - -.- -.-.-'\- -1- 108
0.16 -1--1-----1
0.14 1---1----1--1--1---1,·- , - f -
0.12 f - --+--+--+-_. r - - \ I -
010 1--1--+--+--\--1-·-1--\ r---
0.08 1---1---+--.1--1-.-1--1-----1\--\-1
1
0061---I--+--~·-~---t~-I--+\·--t
004 f- -- - ---1---1--+---+-\11-1
0.02 ---. --- ---t---t-H
o L....._. _ _ _ _ .. _ _ . ._._._ . ___ • . __ ._. _ ._l 0.90 - -- - - - -----
o 20 40 60 80 100 120 O( 160 - 60 -40 -20 0 20 40 60 80 100 120 o( 160
_ T(
-TA
Typ. capacitance C = f(Vos) Forward characteristics of reverse diode

parameter: VGS = 0, f = 1 MHz IF = f(Vso)
parameter: Ip = 80 US, T, (spread)
~ ~~ u
A r- r-
5 . _ _. _ 5
10--+---1---·-- - --- - - --- - ._-1-
C ~~-'lr-t--+----ir--- -.+--t--I.--
110
2
E~~'\gEE~~~~·---~·--~C~s
~
..
f- f - -
- --
:/ ~Cc __ 1-1--- ~~
r>E
- f-
... ~!:.-I--I---
- --
=
.-=
-
- -c- -~
5 - 5
t-- -+---+--1 ~:: -1-1- -- I -
~:---
1--->t----f--t-===y--t--4-.-;;;!-Coss
- --
e- --
,lP -is. 25°( typo
- I - 150 0 ( typo
1-- -... l-
-~
FF ~~ ~ r.!25°((98%J
L1J--. -- I -1-
10 1 f--'-...
---- - c-"< ~ J -~-~-
--;:--
=r= -
~~om
5 I---I---r--t--~-+--- _ C'55 5 I-
f-f- f-
-1- - - I- -
c--I- -
10° L--'--_'----'-_-'- _-'-__'---'_..J
o 10 20 30 V 40 2 V 3
--- VOS --- V~o
662 Siemens
SIPMOS N Channel MOSFET BSP89
Preliminary Data
• 81PM08 - enhancement mode
• Drain-source voltage Vos = 240V s
• Continuous drain current 10 = 0.34A
• Drain-source on-resistance ROS(on) = 6.00
• Total power dissipation Po = 1.5W

versions on 12 mm-tt:pe
SSP 89 SSP 89 Q67002-8652 80T223
Maximum Ratings
Drain-source vOltage Vcs 240 V

Drain-gate voltage I4>GR 240 V Ros =20 kO
Continuous drain current 10 0.34 A TA =25°e
Pulsed drain current lopu,. 1.36 A TA =25°e
Peak gate-source voltage V•• :!:20 V aperiodic
Power dissipation Pc 1.5 W TA =25°e
temperature range T.ta -55 ... +150 °C
Climatic category 55 ... 150 ... 56 DIN lEe 68 part 1
Thermal resistance
Chip - air RthJA :583.3 K/W
Siemens 663
BSP89
Electrlcsl Characteristics
Condition
Drain-source VIBA)DSS 240 - V Vas =OV
breakdown voltage 'D =0.25mA
Gate threshold voltage VGSlth) 0.8 1.5 2.0 V VDI= Val; ID -1mA
Zero gate voltage 'DSS - 4.0 60.0 fAA 1j =25°C; VDS =240 v
'DSS - 8.0 200 /oI A 1j = 12SOC; VDS v

=240
VGS =OV
'DSS - 200 nA 1j =25°C; VDS =60V

VGS =OV
Gate-source leakage current I ass - 10.0 100 nA Vas =20V, VDS =OV
Vas=10V
Drain-source on-state RDSlo.) 5.5 6.0 Q I D =O.34A
resistance
RDSlo.) - 9.0 10.0 Q Val =4.5V
I D =0.34A
Oynamlc characteristics
Forward transconductance gl. 0.14 0.29 - S VD...2*/D * RDSo. max
ID =O.34A
Input capacHance C ••• - 90 140 pF VG' =OV
VD• =25V
Output capacitance Co •• - 20 30 f =IMHz
Reverse transfer
capacitance
Cr •• - 6 9
Tum-on time to. t dlo.) 5 8 ns Vcc =3OV

(t0.=t dlo.) +t.) t. - 8 12 Val =1OV
Tum-off time toll t d(oll) - 25 30 I D =0.28A
Rat =500
(t 011 =t d(oll) +t I) tl - 22 28
Reverse diode
Continuous source
current
Is - - 0.34 A
Diode forward on-voltage VSD - 1.1 1.4 V VGS =OV

'F =0.68A
Reverse recovery time t •• - - - ns VA =100v, IF = 'D A
di F /dt = 100A//oII
Reverse recovery charge Or. - - - /oIC VR =100v, IF = ID R
di F /dt = 100A//ols
664 Siemens
BSP89
Permissible power dissipation Pial = t(TA ) Typ. output characteristics 10 = t(Vos)
B~P 89
16 0.75 r-,--._-=-~:--:-::.:BS,PT.:.:69-'--r_-r--,-l
W l-I- f--- ' - - f--'-_I\~OI =15W___ --j-+--t
1\
14 --1- A Its = .~
"-~ I
Ptot 10 10V--
13 0.60 - 9V ---1---.--1---~"I
--i-
!
12 8V- .
11 I- - i - ~ .- -- .._--- 7V-
0.50 - 6V --=
1.0 "- 5V=-
09
040 t---t--+ ,I"
0.8 f-- I - i-. - \ -f-
07
0.6 S
--- -1-- - i - 030
05 - r\
0.4 -i- -- .-- -~ - - -I- 0.20
03 l - I- i - ---- --
.. --- - I -
- \I - - i -
02 l-I- -I- -1- -1-- -- - - I \ - i -
01 i- I- -- -- - -- _. - - 1--- - - ,\1- 1.--:j:::::::j::::::J==I==l==I==l= 25 V
o 0~±=±=±=~~=c=t=t=2V
o 20 40 60. 80 100 120 140°(160 o 3 4 5 6 7 8 V 10
--~TA -Vas
Permissible operating area 10 = t(Vos) Typ. transfer characteristic 1D = f (VGs )

parameter: 0 = 0_01, Tc = 25 DC parameter: Vos = 25 V, Ip = 80 jls, Tj = 25°C
BSP 69 4
0.70 - - --- - --- -- -- - - r - -
A ------i---------~
10 0.60 - - - - ---- -- -r--- ----- ---

t c--I-- - --. ---I- --- --- - I-
I 050 I - - ! - - I - - - - - - -- -- ---
0.40~~ ~~~~-_~~_-===--
__
030 - - - - -- - - - - - - -- - - - -
. - -- - - - --------
020 1----1---1-- - - - - ·-1--+-+---1
- - -1-- --------+--
---
0.10 f--+--l-/H--t---l-l-
o '--_'-L..L.---,_-,----,_-'--'_J - '--
o 2 3 4 5 6 7 V 10
Siemens 665
BSP89
Typ. drain-source on-state resistance Drain-source on-state rl!slstllnce

ROSlon} = ((10) ROSlon} =f(TI)
parameter: VGS' TJ = 25°C parameter: VGS = 10 V,lo = 0.34 A, (spread)
16 .--..--,-.,- ,-- .~~':-!!- --,- - ~- c -
R
OSloo}
1 14
Q
16
12
R
r" ~--- --~--- -/~~

Q -+--
10 - - - - 1- - -~;%./.V
--l--l-I~~-l
8- - .- .... -.- .. ~:LI--f--

6 ~
.,~
_ .. -- -- .. - ~ . typ.- - I-I-
4 ::~~~ ~~ :~i-- ~ -1-
o
o
L-I_.L~
0.1 0.2 OJ Q4 0.5 0.6 A 0.75

o ~~--.~ - -- j -._1_L-J~
- 80 -60 -40 -20 0 20 40 60 80 100 120 O( 160
-fA ---r.
Typ. transconductance g,. =

((10) Gate threshold voltage VaSl/h} '" f(1j)
parameter: Vos = 25 V, tp = 80 liS, TJ = 25 °C =
parameter: Vas Vos, 10 '" 1 mA
(spread)
5 r-~-.--"'_'r_8~~9 - .-- -- --
S - - - - - - - 1 - - - l.......-+--l--l--l--l
g~ /
t OJO - //
/ L __
025 -- - -- -. -J-J--lf-I--l--l 1-1--4-+-.-- ---- .-- .-- --- -
.
020 '-- -- / -- --. - - - - ..
0.15 --! ------- ---- -I-l-f--J
010 r7----- -- -. ---- - - --

0.051/- -.- - - - --- --1-- - - -I-
o '- '- -. --- .- -- __ '--.1_ o

o 0.1 0.2 03 04 05 A 0.65 -60 -40 -20 0 20 40 60 80 100 120 O( 160
- /0 -r.
666 Siemens
BSP89

V1BR)OSS (1j) = b X V(BR)OSS (25°C)
036r--r--r-~-_BS~P_69__r _ - r _ . - - ' BSP89 10

1.Z0 -
A f--~ . - - r - - -- r--
~:---.j--+--t--j---I---l A
10 0.3Z -- f-- -- - I -
I 10 - - I- - I -I--
OZ8 ~ 114 - -
-
l -I--I -I - - -- -- f-- f -
V-
OZ4 f---r---1- ---+~~.--1--1--+---1 t 1.10 I - - I -I - - - - -- -- V-
f--+---+--ji- -~ .---I~---j - I-- -- ,/ ,- I--
OZO~-+__~'---~-I~I __ ~~4-~ 1.06 I-- V- I - I--
o16 - ---- ----1---1\-- f-- r-- .L- r-- I--

1.0Z V- . - .-- ' - -
f- \
V-
--
O.IZ 1 - - - - - - - - 1 - - \ f--
0.98 --- ~ --.- --
V-
::: == -~-~ -~~= ~-==~
--- --- I- - --
0.94 /- 1--- - ' - 1-- f--
--- - --.- --+_.- --_.- - - .L c- ~
o -_. -- . ---- ---- --- .------ 090 ---- - - ' - -

o ZO 40 60 80 100 lZ0 .( 160 -60 - 40 -ZO 0 ZO 40 60 80 100 lZ0 • ( 160
---Ii. -T(
Typ. capacitance C = ((Vos) Forward characteristics of reverse diode

parameter: VGS = 0, (= 1 MHz IF = f(Vso)
parameter: tp = 80 liS, 1j (spread)
B5P89 101 BSP89
- 11
11
I-
f-- f=: ~ I- 1-1- ~ !-=:= - -I-
[ pF I--r- I-- A I- - I- f - 1-
i-- f - I- 1=
-l-
I-f-
t 10 2 ~\ -----
~~: ---
TJ =
25'(1 yp~ .--.. P-:= -- c =- __._-
1-::
~ V-r=- ----=.;= - --
- -- f--. -:~
1= IS00C t
~~
5 ~I-
I-- - , - - - --j---,I---t--;---{
5 r--I- - --
~
1-1-- T.J =
~ .....::::::::-+-:---11--1--+--1--1
t--
~~_
f-- 1-1---
::,.., 2SoC (98%)
1-1-- ---
r/~
150°C (98%)
1-: __
- -l-
5
I-
=f::
-I-
-
- -
I-
==
---
100 L - - - L _ - ' - - - ' _ - L _ . L - - - L .__- ' - - - '

o 5 10 15 ZO Z5 30 V 40 2 V 3
----Vos
Siemens 667
SIPMOS P Channel MOSFET BSP92
Preliminary Data
• Drain-source voltage Vos = -240V s
• Continuous drain current 10 = -0.18A
• Drain-source on-resistance Ros(on) = 200

versions on 12 mm-tepe
SSP 92 S8P 92 062702-8653 80T223
Maximum Ratings
Drain-source voltage Vos -240 V

Drain-gate voltage \i>GR -240 V Ros =20 kO
Continuous drain current 10 -0.18 A TA =33"G
Pulsed drain current I Cpuls -0.72 A TA =25°G
Power dissipation Po 1.5 W TA =25°G
temperature range T••• -55... +150 °G
Climatic category 55 ... 150... 56 DIN lEG 68 part 1
Thermal resistance
Chip - air R.hJA ~83.3 K/W
668 Siemens
BSP92
Electrical Characterlatlcs
Condition
Static characterlatlcs
Drain-source V(BR)OSS -240 - V VGs=OV
breakdown vo~age 10 =-0.25 rnA
Gate threshold vo~age VGS(th) -0.8 -1.5 -2.0 V Vos= VGS; 10 =-lmA
Zero gate vottage loss -4.0 -60.0 J.iA 1j =25°C; Vos =-24 OV
drain current VGS =OV
loss - -8.0 -200 J.iA 1j = 125°C; Vos =-24 OV

VGS =OV
loss - -200 nA 1j =25°C; Vos =-60v

VGS =OV
Gate-source leakage current I GSS - -10.0 -100 nA VGS =-20V, Vos =0 v

VGS =-10V
Drain-source on-state Ros(on) 12.0 20.0 0 10=-0.18A
resistance
Dynamic characterlatlcs
Forward transconductance g,. 0.06 0.13 - S Vos .,,2* I 0 * R OSon max
10 =-0.18A
Input capacitance CI.. 70 105 pF VGS =OV

Vos =-25V
Output capacitance Co •• 20 30 f =IMHz
Reverse trensfer Cr •• 8 12
capacitance
Turn-on time Ion I d(on) - 8 12 ns Vcc =-30V

(Ion =1 d(on) +t r) Ir 30 45 VGS =-10V
15 20 I D =-0.25A
Turn-off time loff I d(off)
(1011 =1 d(off) +1,) RGS =500
If 30 40
Reverae diode
Continuous source Is -0.18 A

current
Pulsed source current ISM -0.72 A
Diode forward on-vo~age VSD -0.9 -1_2 V VGS =OV

IF =-0.36A
Siemens 669
BSP92
Permissible power dissipation PIOI = ((TA) Typ. output characteristics 10 = f(Vos)
BSP92 BSP 91
1.6 -0.40
W f- f-
1.4 A
1\01 10
12
\ -5V
~ 1- 0.30 I
1.0 .--- -- --4.5V
""1\ I
0.8 -0.20
I___+-+-~-t-- 4V
1 - -1---
06
'\
~ ---4--
J..--I--I--t--t--t-- 3.5 V
04 -0.10
"" ~-+~--~+-+--r-3V
o 2 1--- .- - ·-'-0 - - -- _. -- -.
-f\ f- f- --- -- .- - --- -- .--- ---1--
"..-!--1r--t-+-+--t--t--t-- 2.5 V
r--
o' - 1\ o~+--t--t--t--+~~r-+-~-2V
---- --
o
---~.
20 40 60 80
_TA
~.
100 120 1400 ( 160 ° -1 -2 -3 -4 -5 -6 -7 -6 -9 V-ll

- Vos
Permissible operating area 10 = ((vos) Typ. transfer characteristic 10 = ((VGs )

parameter: 0 = 0.01, Tc = 25°C = =
parameter: Vos 25 V, Ip 80 lIS, 7j 25 °C =
A - - --- ----. --- - -.. - --. ..- ---
ItO--Oo:: ==- ==:1----: ~~--~~--~ =~

I-----I----l-- - , -1--.- --- -- - -- 1 -
- 0.20 -- - - --. -.-- --- --
I---- 1-. - - - - -.-- --.- - - -- .--
-0.161-1--- - ---- ----1--
-0.12 1-1--1---
II
1-- ----~. =~ =~
----1----
- 0.08 1--+--+-I/--1--j--- - - --I---- -
I---l----l--I.-j--t-t---t--i-- - - - -
- O. 04 I----t----l-/I-+--t.-t--+--t----t-- - -
I--+--bf-t-+--t--I---t--j·-- - -
O~~/'~_~J--L_~~ __ ' _ _ _
o -2 -4 -6 -8 V -10
670 Siemens
'ssp 92

ROS(on) = f (10) RoS(on) =f(~)
parameter: VGS , T, = 25 DC parameter: VGS = 10 V, 10 = 0.18 A, (spread)
BSP 91 BSP 91
65 50
~J"JI_
o -2.5V-3V I I
-3.5V-::W--4.5V - 5 V - -
ROSlonl 55 r-f ROSlonl

40
50 '---
45
40 30 1---1--1---1
35 I - - - f--. .- -- f -
30
/ 1-
/
25 -
:/ /- V- -/- - --6V
-- 20
- --- -.,.-
20 ...L ::::;;;:;;; ~
---: ~ V ~
15
10
10 -7V -6V-9V-l0V- - - f -
5-
o-
o
-i----i----tj---
---- -- -_..
- 0.10 -0.20
-- I -
-- ._._- - - - '
- 0.30 A -040
o
- 60 -1.0 o
____ .... 1--
40
1-
80 120 0 ( 160
-10 rJ
Typ. transconductance g,s = f(/o) Gate thre.hold voltege VGS(lh) = f(7j)

parameter: Vos = 25 V, tp = 80 liS, Tj = 25 DC parameter: VGS = Vos, 10 = 1 mA
(spread)
SP,..:.9.:.2- , - - - , - - - ,
0.20 ,---_,--__ r-_B:.::c BSP oZ 8
-5
- -
v ....
s ----1--
VGSllhl
9 Is 0.16 -4
t 0.12 -3
. t-
0.08 -2
-1
o --- - ----- - - o
o -005 -010 -0.15 -0.20 A -0.30 -60 -40-20 0 20 40 60 80 100120·( f60
- - - 10 -~
Siemens 671
BSP92
Continuous drain current 10 = l(rA) Drain-source breakdown voltage

VIBRIOSS (1j) =
b X VIBR/OSS (25 Oe)
aSP91 asp 92 10
-0.20 1 20
A
A
1.16 - --- ---, --- . --- ---
""-
-~-
10 -0.16 - b
~--~~-. 112
f -012 108
c--- ------~
I ~ 104
~-,--~1\-
- 008 f--
8-.]Jt:c:-
1.00
- 004 0.96
1]
i -I-
0.92
o L o ----- - - --
o 20 40 60 80 100 120 O( 160 - 60 -40-20 0 20 40 60 80 100120 O( 160
--_to . _. TA -T(
Typ. capacitance C = I(Vos ) Forward characteristics of reverse diode

parameter: VGS = 0, 1= 1 MHz IF = l(Vso)
10J asp 92 11 100 asp 92 12
pF ~==l==~=r==f~ A ~ =.}~:::
25°(1 yp. -izlT-~1i2
~-- = --: : ==-- - -
~~ t:: ~r-
'-1=
--.- . - - - 1 - - ---1-
5
__. . --- - - ~
~-t---! 5 1-
1500 ( tYr;/lI-v~~
c -~~ T; - -1------:--
I ~ '25°((98%)
r
5 5 r----
'" ",1= -c
--
, . -- I-
cO: , 150.~,"'J
- - - -
-- - -
1
----- _=, ~
" ·-1--
I- - --1--
:------
=
1-'- . - -- -- -.- ---
1-:- I- - --- c-
-r- . - - I-I---r-
-:-1:-= ~ -_. JJ--- =- ==1=:::
o
. :=+-1- --:-i=1=
5 I-:F-I-i==l=
1-1--
1--I- -
J _. ~-
-20 -30· V -40 -1 -2 V -3

- - - - <...
- Vos
672 Siemens
SIPMOS N Channel MOSFET BSP 125
Preliminary Data
• Drain-source voltage VOS = 600V s
• Continuous drain current /0 = .110A
• Drain-source on-resistance Ros(Dn) = 450

SSP 125 SSP 125 062702-S654 SOT 223
Maximum Ratings

Drain-gate voltage \.DOR 600 V RGS =20 kO
Continuous drain current /0 0.110 A TA =39DC
Pulsed drain current IOpuls 0.44 A TA =25°C
Peak gate-source voltage V.s :t20 V aperiodic
Power dissipation Po 1.5 W TA =25DC
temperature range Tat. -55... +150 DC
. Climatic category 55... 150... 56 DIN lEG 68 part 1
Thermal resistance
Chip - air RthJ' ::;83.3 K/W
Siemens 673
BSP 125
Condition
Drain-source VeBR)OSS 600 - V Vas =OV
breakdown vo~age 10 =0.25mA
Gate threshold vo~age VGSeth) 1.5 2.0 2.5 V Vos= Vas; 10 =lmA
Zero gate vo~age loss 10.0 100 nA TJ =25OC; Vos =600V

loss 8.0 50.0 JlA 1j =125°C;Vos =600V

Vas =OV
Gate-source leakage current I GSS 10.0 100 nA V GS =2OV, Vos =0V
V GS =10V
Drain-source on-state AOSeon) 30.0 45.0 0 10=0.11A
resistance
Forward transconductance g'l 0.06 0.15 S VDS ",2*/0 • A DSo. max
10 =O.llA
Input capacftance CII. 110 170 pF Vas =OV

Vos =25V
Output capacftance Co •• 10 15 f =lMHz
Reverse transfer Cr •• B 10
capacftance
Turn-on time 10 • Ideo.) 5 8 ns Vee =30V

(Ion =1 dCo.) +t r) Ir 10 15 VGS =10V
18 25 10 =0.21A
Turn-off time loll I deolll
Aas =500
(loll =1 dColI) +t f) I, 20 25
Reverse diode
Continuous source
current
Is - 0.11 A
Pulsed source current ISM 0.44 A
Diode forward on-vo~age Vso 1.0 1.4 V VGS =OV

IF =0.22A
674 Siemens
BSP125
Permissible power dissipation P'ol = ((TA ) Typ. output characteristics 10 = t(Vos)
85P115 85P125
1.6 -r-r 0.26 I R
lo,=l5W
W 1-- t"\--
~o, 1.4 f - - I-I- --
1-\ - I -l- ;tv=+_--J'~-"..,~--r;~~~-~;:;-4tt-._-l
= V-V
ItO 0;2
I-- -- -
1.2 1-- f - -
[S~ -- 0.20 :~ ~LD-k::::'---il--t---I-+--l
7V--
f ~ - l -I - 0.18 I-- 6V - - IV7'l--I--+-'I--+--I-4
1.0 "\ 0.16 5.5V rJ''-),-~""",l---lI-t--+-+-+--1
1--1-
0.14 - 4~~: 'l'V-~I-V--I).--I-\-+--+--+- 35V
0.8 I- --1\ -J WI7 - ~,
1\
0.12 I-
Z:
0.6 I- -- f - - _.- - - I-
0.1.
f-I- -" "\.
- -I - -
0.10 I-- - ~
0.08 I--
0.06 ~- V- ,/
"I - I--
--t--i-il-"";;:;Ir--.--t-.-t--l
-- 3{ -
.......
'-- - - -\ - l - I -
0.2 f - - 1 - - - 0.04 V I
1-- 1 - -1 - - -- - l - I - -
- _.
-- -'I [S ,-
1--- 002 --
o r_-,---,-_.
_.1-- 1--- I-- --I- 2 5V
j
o ---- '--
o w ~ w 00 ~ ~ ~~~ o 2 4 6 8 10 12 14 16 18 V 22
- - - TA
Permissible operating area 10 = ((VOS) Typ. transfer characteristic 10 = {(VOS)

parameter: 0 =
0.01, Tc 25°C = parameter: Vos = 25 V, tp = 80 jJS, ~ = 25 °C
85P125 85P 115

l- - 014 --
I- -11U
,_
=r~~~- 'p=
rO.~
I- A
- -
0.01
- -.\<>~ - .. . \IS - -
- -. ~~~ r\. III
-
q.f\ -, 1100 - - 1--1- . -
~- --
~~~-: - \IS 0.16
=1- --
.~ '=::. .U
5 ~~=-~-.- --
- - -- 1- -'
- ~-
I
ms 0.12
1- --
~-:-
I-- -- 1---' ~
\
II
10
-
~
- _. -- - - ?C ~ ms
0.08
5 It . 'p
- -
-I--
.f--
-
---
- i~ms ....
-
D-!L~
--T_ T ,- - -
0.04
I
LillJJllll I II o I
o 2 3 4 5 6 7 8 V 10
---Vos -VGS
Siemens 675
BSP 125

ROSlon) = ((f0) ROSlon) = (Tj)
parameter: VGS , TI = 25°C parameter: VGS = 10 V,lo = 0.11 A, (spread)
B~P II~
-8SPl15
140
\l I-- - GS r
V. =3V -
l- r-l SV 4V
-
~r:::
f- -_.- - , - r-- -·1- - f-- -I-- -
-- " - -_. !.- - /
'- - 1- ._. -- - - . - 0-_- -.- -
1- -
I-- - 7
1-- f-- - l- .- - !- - ~
f-- I - I -
/
t --
/ 80
80 - -c 98%/ /
/
1- -
- I-
- - --
tI - I-
J V-- L -
- -- - - -
60
60
,..- ./
/
./
V / 7'V - i-
,/
~ ~
.?
I- ./
40 ,...--: ~ ~ 40
V ,;- typo
- V V
./
20 ~ __ 4SViL ssv 6V 7v'~V ~V 10V 20
o
o
==J=r±i±+ 004 008 012 016
J L JL
020 A 0.26
o
I- -
-80 -60 -40 -20 0 20 40 60 80 100 120·C 160

-~
Typ. transconductance g,. = ((/0) Gate threshold voltage VGSllh) = f(TI)

parameter: Vos = 25 V, Ip = 80 IlS, 1j = 25°C parameter: VGS = Vos, 10 = 1 mA
(spread)
ssP liS BSP11~
S.-r--r-.--.---i-"-r--r---,--,r-r--l
,/
9" S I-~ -- - -- - - ~V'L~ \{;SlIhl
Vr-+--~-r-+--l-~I-t---I----~
I--!--I---+--I--I--!--t---I- - 1 -
1 016 - --- --- ~~ - - ; ; ; r-~I-I--j--i 4t-+-~-r-+~-jl-+-~--j--r-1
1 I--I--+--+-+-I---I---I---/-- 1--
012
I-I----~--I---!-
r-!.--V- - --I---j-+-+---1
_. - r-
3 1-1- --I---!-+-+--t--I--!--j---j
~i== ~I:::::
=:2;<-8°",,1'°+--+-_1-_1_+-_1
1--1--+--+- .~ -- I-- - - -
1--1-) -- -- --j-I-t---!--+--j -I--t br-- --- - -
0.08 -1/1---- ---t--t-I-I-I-
2 _ - ::-- -
-;:;,-
f--t;::::~-..j.,~=
'{!:..
r-;;,,_
----
.:.:...~ %+-+--+=~-I:;:-i
-
0 0 4 / - --- - -- ---·--I--!--I--+--1
I--!--I-- - - - --- -
I--+--.f-. 1 - - -
.--1=.-
- - - ---..-- I -
I - r - - r - ' - - - - r - --1-1--
j--t-+-+--j--f---I---+-t-I- I--
o L - - L - _ _ L...- _ _ _ _ _ _-1--1-1--1--
________ .•. 1---
~
004 0.08 0.12 0.16 A 0.22 -60 -40 -20 0 20 40 60 80 100 120·C 160
-/0 -~
676 Siemens
BSP125
Continuous drain current /0 = ((TA ) Drain-source breakdown voltage

V(BAIDSS (7j) = b X V(BAIDSS (25°C)
asp 115 10
012 --- --- - --- -- 120
A A
10 b
010
009 1"4
r 006 110
007
106 - -- --.
006
005 102
004
003 098
002
001
094 -1-- -- ----
--- -
o -- ---- - 090 - --- --. ---
o 20 1.0 60 80 100 120 O( 160 -60 -40 -20 0 20 40 60 80 100 120 DC 160
-----r.,
Typ. capacitance C = ((Vos) Forward characteristics of reverse diode

parameter: VGS = 0, (= 1 MHz IF = ((Vso)
OSP 125 II o B,P 115 II
10 ~-=EE == .='1- '-r-
nF A
T
'25~(t p :-= ==___
--t=t:::-- - -- . -
:.....f:-.:.t=- =;=1=
[
1,., It::±=-±::-::-l=-
- ~=±=l I ---- -l./t-Zs. ~
I,
10 '
lS0 D C
----
t~~ ~ fl----I-~l""~+-·+--1.-+--4---1
-V~p
= ----_=e:=- ___
.- _. -- v: ,,- 2S D C (98%)·-=:' - - -==
5 S =~-:I/
==:.:-: . 'I---:- lS00e (96%) :~~+::--=
__ ~_-=--=~~,=
- --. .- --- -1-
- _. - --r-
Hjl == - -- -- - -- =-:t=t=*=F=l=t=l
5 S
=-== - ~~~~ ~~~ ~:=.= -=1::::=
= --r- -- -r- -.- - .. r----
_. _. -- _. --- _._. - -- _. .._--_.-:-
- - .- --.-. -.- -- -. -- - - 1 - - - -
_.
100 ~_L_
o 5 10 15 20 25 30 V 40 V 3
-Vso
Siemens 677
SIPMOS N Channel MOSFET SSP 129
Preliminary Data
• 81PM08 - depletion mode
• Drain-source voltage Ves = 240V S
• Continuous drain current Ie = 0.19A
• Drain-source on-resistance ReS(on) = 200
• Total power dissipation Pc =1.5W

versions on 12 mm-u:pe
B8P 129 B8P 129 062702-8510 80T223
Maximum Ratings
Drain-source voltage Ves 240 V

Drain-gate voltage \,bGR 240 V RGS =20 kO
Continuous drain current Ie 0.19 A TA =29°C
Pulsed drain current I Dpuls 0.57 A TA =25°C
Peak gate-source voltage V.' ±20 V aperiodic
Power dissipation Pc 1.5 W TA =25°C
temperature range T.t. -55 ... +150 °C
Climatic category 55 ... 150... 56 DIN IEC 68 part 1
Thermal resistance
Chip - air RthJA $83.3 K/W
678 Siemens
asp 129
Electrical Characterlatlca
Description Condition
Static characterlstlca
Drain-source V(BR)DSI 240 - - V Vas =-3V
breakdown voRage ID =0.25 rnA
Gate threshold voRage VaS(th) -1.8 - -0.7 V VDS= 3V; ID =1mA
Zero gate voRage I Dss 100 nA 1j =25'C; VDS =240V

drain current Ves =-3V
I Dss 200 IlA 1j = 125'C; VDS =240V
Ves =-3V
Gata-source leakage current I ass - 10.0 100 nA Vas =20V, Vos =OV
Ves =OV
Drain-source on-state RDS(on) 9.5 20 0 I D =.014A
resistance
Dynamic characterlstlca
Forward transconductance g'l 0.14 0.2 - S VDS .. 2* I D * R DSon max
I D =0.25A
Input capac Hance ClIO - 110 - pF Ves =OV

VDS =25V
Output capacRance Co •• 20 - f =1MHz
Reverse transfer Cr•• 5 -
capacHance
Tum-on time ton t d(on) - 10 ns VCC =30V

(t on =t d(Gn) +t ,) t, 15 - Ves =-2V... +5V
Turn-off time t olf t dColf) 80 - I D =0.25A
Ras =500
(t olf =t d(G'" +t I) tI - 150
Reverse diode
Continuous source
current
Is - 0.15 A
Diode forward on-voRage VSD - 0.7 1.4 V Vas =OV

IF =O.3A
Reverse recovery time trr - - ns VR =100v, IF = 10 R
d/ F Idt = 100A/lls
Reverse recovery charge Or, - IlC VR =100V, IF = ID R

dlF Idt = 100A/IlS
Siemens 679
Preliminary Data
• SIPMOS - depletion mode
• Drain-source voltage Vos = 600V S
• Drain-source on-resistance RDS(Dn) = 600

SSP 135 SSP 135 062702-S655 SOT 223
Maximum Ratings
Drain-source voltage Vo• 600 V

Drain-gate voltage YbGR 600 V RGS =20 kO
Continuous drain current 10 0.100 A TA =27"C
Pulsed drain current J Opul. 0.30 A TA =25 D C
Peak gate-source voltage V.a ±20 V aperiodic
Power dissipation Po 1.5 W TA =25"C

temperature range Tatg -55 ... +150 DC
Thermal resistance
Chip - air RthJA ::;83.3
680 Siemens
SSP 135
Electrical Characterlstlca
Condition
Drain-source V(BR)DaV 600 V Vas =-3V
breakdown voHage ID =0.25 rnA
Gate threshold voHage VaS(lh) -1.8 -1.2 -0.7 V VD.= 3V; ID =lrnA
Zero gate voHage I DSV - - 100 nA 1j =2S'C; VDS =600V
dreln current Vas =-3V
' DSV
- 200 /lA 1j = 12S'C; VDS =600V
Vas =-3V
Vas =OV
Drain-source on-state RDS(on) 45.0 60.0 Cl I D =10rnA
resistance
Forward transconductance 9," 0.01 0.04 S VDS ",2* I D * R DSon max
ID =10mA
Input capacnance CII I - 110 - pF Vas =-3V
VDS =2&1
Output capacHance Co •• - 20 - f =lMHz
Reverse transfer Cr •• 5 -
capacnance
Turn-on time ton t d(on) 10 - ns Vee =30V

(t on =t d(on) +t,) t, 10 - Vas =-3V... +5V
Turn-off time t off t dColf) - 15 - I D =0.2A
(t off =t d(olf) +t ,) t, - 25 - Ras =500
Revense diode
Continuous source Is 0.100 A

current
Pulsed source current ISM - 0.300 A
Diode forward on-voHage VSD - 0.90 1.30 V Vas =ov

IF =0.2A
Reverse recovery time trr - - - /ls VR =l00V, 'F = IDR
dl F Idl = l00A//ls
Reverse recovery charge Qrr - - - /lC VR =l00v,/ F = I DR

d/F Idl = 100A//ls
Siemens 681
Preliminary Data
• SIPMOS - depletion mode
• Drain-source voltage Vos = 200V S
• Continuous drain current 10 = .44A
• Drain-source on-resistance Ros(on) = 3.50

BSP 149 BSP 149 Q67000-S071 SOT 223
Maximum Ratings

Drain-gate voltage \.bGR 200 V RGS =20 kO
Pulsed drain current J Dpuls 1.32 A TA =25°C
Peak gate-source voltage VB. ±20 V aperiodic
Power dissipation Po 1.5 W TA =25°C
temperature range T.I. -55 ... +150 °C
Thermal resistance
Chip - air RlhJA ::;83.3
682 Siemens
BSP 149
electrical Characterlatlcs
CondItIon
StatIc characterIstIcs
Drain-source V(BR)DSV 200 - V Vas =-3V
breakdown vo~age ID =0.25mA
Gate threshold vo~age Vas(th) -1.8 - -0.7 V VD.= 3V; ID =1mA
Zero gate vo~age I DSV - 0.2 pA 1j =25'C; VDS =200V

drain current Vas =-3V
IDSV - 200 pA 1j = 125'C; VDS =200 v

Vas =-3V
Gate-source leakage current I ass 10.0 100 nA Vas =20V, Vos =0 v

Vas =OV
Drain-source on-stste RDS(on) 3.0 3.5 n I D =30mA
resistance
DynamIc characteristics
Forward transconductance gl. 0.4 1.0 S VOl :.:2' I D * R DSon max
10 =O.44A
Input capac~ance C ... - 400 - pF Vas =OV

VDI =25V
Output capac~ance Co •• 50 - f =1MHz
Reverse transfer Cr •• - 15 -
capac~ance
Turn-on time ton t d(on) 15 ns Vee =30V

(Ion =1 d(on) +t r) Ir 10 Vas =-2V... +SV
Turn-off time I off I d(off) - 100 - 10 =O.29A

(I off =1 d(off) +t I) II - 40
Ras =500
Reverse dIode
Continuous source
current
Is - 0.44 A
Pulsed source current ISM - - 1.32 A.
Diode forward on-voHage VSD 0.9 1.2 V Vas =OV

IF =0.88A
Reverse recovery time I rr ps VA =100v, IF = ID R
dlF Idt = 100Nps
Reverse recovery charge Q,.r - pC VA =100v, IF = I DR

dl" Idt = 100Nps
Siemens 683
Preliminary Data
• 81PMOS - enhancement mode
• Drain-source voltage VOS = 50V s
• Drain-source on-resistance Ros(on) = .30

SSP 295 S8P 295 067000-8066 80T223
Maximum Ratings

Drain-gate voltage ItbGR 50 V RGS =20 kO
Continuous drain current 10 1.7 A TA =25°C
Pulsed drain current I Cpula 6.8 A TA =25°C
Peak gate-source voltage V•• ±20 V ,aperiodic
temperature range T.,. -55 ... +150 °C
Climatic category 55 ... 150 ... 56 DIN lEG 68 part 1
Thermal resistance
Chip - air R'hJA ~83.3
684 Siemens
BSP295
Electrical Characterlstlca
Condition
Drsln-source V(BR)OSS 50 . V VGS =OV
breskdown voHage 10 =0.25 rnA
Gale threshold voHage VGS(th) 0.8 1.2 2.0 V Vos= VGS; 10 =1mA
Zero gate voHage loss · 0.1 1.0 pA TI =25'C; Vos =50V

1058 · 8.0 50.0 pA TI =125'C;Vos =50V

VGS =OV
Gate-source leakage current I GSS · 10.0 100 nA VGS =20V, Vos =0V
VGS =10V
Drain-source on-state ROS(on) · 0.2 0.3 0 10 =1.7A
resistance
ROS(on) 0.4 0.5 0 VGS =4.5V
10 =1.7A
Forward transconductance g,. 0.5 1.4 S Vos ",2* I 0 * R OSon max
10 =1.7A
Input capacHance CI.. 370 550 pF VGS =OV

Vos =25V
Output capac Hance Co •• 110 170
f =1MHz
capacHance
Turn-on time Ion 1 d(on) 8 12 ns Vce =30V

(Ion =1 d(on) +t r) Ir 15 25 VGS =10V
100 150 10 =O.29A
Turn-off time loll 1 d(olt)
(1011 =1 d(off) +t,) Ros =500
I, 75 110
Reverse diode
Continuous source Is · 1.7 A

current
Pulsed source current ISM · 6.8 A
Diode forward on-voHage Vso 1.0 1.5 V VGS =OV

IF =3.4A
Reversa recovery time Irr · ps VR =100V, IF = 10 R

diF /dt = lOONps
Reverse recovery charge Orr · . pC VR =1oov, IF = I OR

diF /dt = looNps
Siemens 685
BSP 295
Permissible power dissipation PIOI =f(TA ) Typ. output characteristics 10 = fIVes)
a~r 19,)
16
40 -- Fi'o; = i.~w - \{;s=10V
P.o.
W
14
A -- \ - ri - -: =i~
12 30 - (/-I--I---I--I--j.-I- 4 S V
"I/_-'5SV
10 2.5 ---- 'II .--- -~::::: ~y ---
4V
0.8 2.0 t-- ~- --I- - ---- --- -----
06 1.5 - rl--~- __________ .__ ._3~::'
04 1.0 _._-- -_.

-~
,:::: -. -.-- ----- .. --
3V
--- ._._-
1/ r--..
02 --
--r-
0 1
0 20 40 60 80 100 120 140 0 ( 160
0.5
o
o
'/
3
_____~1!v 4
2W
V 5
-- TA
- - - Vos
Permissible operating area /0 = fIVos) Typ. transfer characteristic Ie = fIVGs)

= =
parameter: 0 0.01. Tc 25 °c parameter: Ves = 25 V. Ip = 80 115. Tl = 25 OC
A --
10 4.5 --._-1----
:: ~~ ~- ---~~~j~{~~~--:~~~-~~- ~=
30 ----- ---~-I1-~ --- -- -----
2.5 -- ---1--.1-- - - - - - .--- -.- ---I--
2.0 1-1-- -
IS
~fl-- - _.--- --
-----------
:: ----/----~~= - - - - --~=
o~
o 1 2 3 4 5 6 1 8 V 10
- - -.. - Vos
686 Siemens
l3SP 295

ROS(onl = f (10) . ROS(onl = f{T,)
parameter: VGS , 7j = 25 °C parameter: VGS = 10 V,lo = 1.7 A, (spread)
Rc"r7q~,
09 Vus =25V- jv--- 3~t·.,i.v 4.5V 5V" 055
R~,.", 0"=/== .=- ~=-

11
Rn ... tofll 045
040
06
0.35
030
025
5.5V 6V BV 9V lOV 0.10
·-·~I
_.,
01 ---
005
0 o
0 A 4 -80 -60 -40 -20 0 20 40 60 80 100 120 O( 160
-------10 ------ "

Typ. transconductance 9,. = f(lo) Gata threshold voltage VGS(thl = f{T,)
. parameter: Vos = 25 V, Ip = 80 \1S, T, = 25 OC parameter: VGS = Vos, 10 = 1 rnA
(spread)
BSP 195
22
S
v
18
9"
16
14
1.2
lO
oB
0.6
04
02
0 o-
0 4 A 5 -60 -40 -20 0 20 40 60 80 100 120 °c 160
-r,
Siemens 687
BSP 295

VIBR)OSS (7j) = b X VIBR)OSS (25 °C)
1 8 r---"---r---'!~ l~~_-r--r--r---' --10

BSP19S
1.20
r-i"-.. A I - - I-- - - - --
1.16 I-- - - '-- ---- -- - --- I-- - ,.-
10
A "'"
1 4 I----+.---f---f--'"< +-+--+-+-j
10 114 - -. r-- - I-- - I -
'\ 1.12 I-- --- - V-
12 I - - ----.-- - - r----~--- .---I---i
1 1.08
110 I-- .- -
/
- 2 I--
1.0 t------+---1---+-+-.1\ 106 -- :-.- '-- -- /- - --- I -
:: I--r-------~_= _____ r\:= 104

102
100 I--I-- --- V
i-- e--- V-
~- : - -- - -- I--
-
-- I--
I-
"/V-
-
04 ----1--1\-
1----+--.. - - - - -
0.98 I--
0.96 I--
/
-- - f-- I--
1----
o2 I----+----f---f---- --- - - - rt- 0.94

092 L I-- - I -I-- -- 1---
o ____ ._______._1 0.90 -- -- - - --'- ._- '---- , - -- __ l - .
o 20 40 60 80 100 120 °( 160 -60 -40 -20 0 20 40 60 80 100 120 O( 160

-----.---. - TA
Typ. capacitance C = fWos)

parameter: VGS = 0, f = 1 MHz
10
1
o-:c_: -_::::c: .:-0 ..
asp 29')
--::_-= :-::-:-._ =-= .:::: __ .___"_
-----. ----- - - -
11"--!-"'--+__..:._--_.+-_-_-'_4_-__~c.,,-
-~---i
--- -_. -.. - j . .-~
. -.-
'I
-- -. - ._-
..
__ ~" ~~L:': _=-=-

c 150°(198%)
25°( (98%)
10'
_. -- ... -- -
10- 2 L-'C_Jl---'ILL...L..LJ-..L_L-JLJ--L-----L...L..J
5101~202530V 40 o 2 V
--.--..--- Vos ----VSO
688 Siemens

• Drain-source voltage VDS = 100V S
• Continuous drain current ID = 1.0A
• Drain-source on-resistance Ros(onl = 0.80

SSP 296 SSP 296 Q67000-S067 SOT 223
Maximum Ratings

Drain-gate voltage VDGR 100 V RGS =20 kO
Continuous drain current ID 1.0 A TA =25°C
Pulsed drain current I Dpuis 4.0 A TA =25°C
Peak gate-source voltage Vg. :!:20 V aperiodic
temperature range Totg -55 ... +150 °C
Climatic category 55 ... 150 ... 56 I DIN IEC 68 part 1
Thermal resistance
Chip - air RthJA :583.3
Siemens 689
BSP296
Condldo"
StatIc characteristics
Drain-source
breakdown voltage
V(BA)DSS 100 - - V Val=OV
'D =0.25 rnA
Gate threshold voltage Vas(th) 0.8 1.2 2.0 V VDI = Val; ID =1rnA
Zero gate voltage 0.1 1.0 /JA 7j =25"C; VDI =100V

drain current ' DSI Val =OV
I DIS - 8.0 SO.O /JA 7j = 12SOC;VD1 =100V

Val =OV
Gate-source leakage current I ass - 10.0 100 nA Val =2OV, VDS =0V
Val =1OV
Drain-source on-state
resistance
RDI(on) - 0.55 0.8 0 I D =1.OA
RDS(on) - 0.95 1.4 0 Val =4.5V
I D =1.OA
Forward transconductance g," 0.5 1.1 - S VDI ~2· ID * RDSon max
ID=1.0A
Input capacHance C," - 400 600 pF Val =OV

VDI =25V
Output capac Hance COli - 65 100
f =1MHz
Reverse transfer C rol - 20 30
capacitance
Turn-on time ton t d(on) 7 10 ns VCC =3OV

(t on =t d(on) +t ,) t, 10 15 Val =1OV
t d(off) 100 1SO ID =0.29A
Turn-off time t off
(t off =t d(ofl) +t,) t, - 50 75
Ral =500
Reverse diode
Continuous source
current 'I - - 1.0 A
Diode forward on-voltage VSD - 0.9 1.3 V Val =OV

I, =2.OA
Reverse recovery time trr - - /Js VII =100v, I, = IDII
dl, /dt = 100A//J.
Reverse recovery charge Or, - - - /JC VII =100v, I, = IDII
dl, /dt = 100A//J.
690 Siemens
asp 296
Permissible power dissipation P iol = ((TA ) Typ. output characteristics 10 = ((Vos)
P -'296
1.6 ,---,---,---,_-,--,--,,--iB:,:Si- -1 :,-,---"---,,,-; 2.4
W ~-+,~+-+4-+-1--~+-~-~~4~ A
1.4 r-t-t--t'\. - - - - - - -I--I---~+__I---I
H---t--t-I\-' - - --f- - -- -. ,-- - ---

\.
1.2 -- --- ----:--~-
r-:-----~. --------.. - -
10 :\ - - '-1--- - . - -
f--:-r---r-\--r-----~
0.8 -r-:-i- -- -1- - , - -- - --I-
0.6 ::::r:=~I::::==:::: -~ -~ \ - ~....~. - - :=

-I-I--~------~-I---I- 0.8
0.4 f--+-+-t- -. --. -- -- - -....-\ - -.. - -
H-I'--I--t- - . - - - - . -- t\1--- 0.4
0.2 -- - - - -- .\---
-_. -- --- --- _.- ---f\-
a- . a
a 20 40 60 80 100 120 .( 160 a
Permissible operating area 10 = ((Vos )

parameter: 0 = 0.01, Tc = 25 DC
-=tI-7'='"
== ,\'"
-- ,-\",'"
--
:-.- t=-
-- -
BSP 296
..
-
-
.
~-:
001)Js - -
36
A
32
Typ. transfer characteristic 10 ", f(VGs )
parameter: Vos = 25 V, tp - 80 IlS, ~ = 25 DC
___ BSP~ ________
=:--~-l-- ~-~ -~ ~~ ~-=- --

j'
- //
-«-"''X
V \.-
.'\
-
-1---
10)Jsr 10 28 - - - - -
1--+--+--+-- . -
-
-- -
--
---
~--
:
-
=-
j~ ~~:: ~
100)Js
=:1. -
-~-=- ---
5
:::::::' ~-
-
- ~~ "-, - -1'
-I.....,"
__
. . -- .. .
1ms - - -
-- -
'\
-- ,,--
~ .;~..:.. -
-t - .
16
12
-----
--- -- -
- --- --
-1--- --
.....
. -
.-
-
--I -
10ms.~- 0--- -- --
------ -
-- .
. I-+-+--I~-+--I-- .... -- --.
;~.
5 I-- t== p .
---.-~
100ms" -
-- . . . -
-
O=!!:..
T
_UWlllLilL
5
T
10 1
f
-i1
..
DC
-- I-...L--J-..J.-I-.-I--I-- -
--I-~-+---
5
- .. - --.. -
--- --"--
V 10
Siemens 691
BSP 296

ROSlon) = ((10) ROSlon) = ((TI)
parameter: VGs • TI = 25 "C parameter: VGS = 10 V. 10 = 1.0 A. (spread)
2.6 .--..-..--.---.----,"-"--r'-'--,------,-.--.-..,--', 1.8 - -- - - - - - ~SP!.2.6 - - - r _ -- -...!
n
n 1--1--1--1--1--- -.- ---- -- --J--If-l
22 h~+-+- /
R ---I--~I-/-1f-l
ost ~: f--t-l-I
ROSlon) 1.41-+---'1-1-1-- - --
1 . 2 - - - - - --- - ---17 /--- -

I 1.6 t
1.4 r--1'-T"-r---,- 10
.
-f------'-=- - / - - -
V--7~
98%
1.2 r-"C.:..o--l
O.S ~-r- -V-----
0.6 ~I-l-..,..g..'/.- - t~/ ~I-- - - - -
1.0
0.81~~~
0.6~
....................... - - - - - _.. ---
0.4 r....
_\S5V 6V 8V 9Vl0V
~: ~-1-j_-1-- -+-~t~j --t--t--+--I

0.21-+-+-+ 1-+-+--1--1--------
o '-- ___ .._ .__ - . 1 - . - - -... --
a 0.4 08 1.2 1.6 2.0 A 2.4 -80 -60-40 -20 0 20 40 60 60 100120 O( 160
10 _T)
Typ. transconductance g,. = ((10) Gate threshold voltage VGS(lh) = ((1j)

parameter: Vos = 25 V. Ip = 80 IlS. 1j = 25 °C parameter: VGS = Vos. 10 = 1 mA
(spread)
BSP 296 BSP 296 8
1.8 5 -'--r--
I-- - 1 - - - -
-- - -- --- - I -
..... ~ V 1--1-- --c-- 1 - - - - - - - ----I--
S 1-- --- 7 L - f-+-+--I-- I-- - --- - -- ---1-
""V - - - - 1 - - - - - - - 1 - - '-1-
q" 4 ----.--
1.4 Vk - - - - f - - - I - - -- --:- ---1-
../'" - - - - - 1 - - - --1--- - - ---1-
12 -- f--I- -,- - f-+--+---I--+---1--I--+---1-- ---I--
f-+-+--+--I--I--I-I- r - - -
I1 V 3 1-----
1.0 - - --1-- - f-+-+--+--+--I--I---II- -- - - -
==,=
f-+-'+--I--1--'-\- ---t-- -- -.--.-
i V ~f..--;-I-- -- - - --+-- - --:--
08
rl- Ir -- - - -- ._--- -- - 1-1--
.•:.::+-- !~6 %-=
t -fII
2
0.6 "-+-1- - 1- - -- .~ .- - l - f-+--+--+---l---+-I::::j::::; :::::- ~
I
!
1
i I - -r--.. ___ typ.- - - ":~i'--
0.4
i l- - - -- - f-f-I-
1- __ ':;'--I---~~,:::,-
I ,
02
I i ---- - -- ---I- ~ - -11-~--+--"'-'f-'-=r-'--/-_==--j--j
I--f-t---t-- I--I--I---t-----C- -=-1--
a
a
iI 2
- -- - - '--'--
3 A 3.4
o
f--f--I--~-- -
- 60-40·20
,
- --I-f---!--I-
a 20 40 60 80 100 120 0 ( 160
692 Siemens
BSP 296
Continuous drain current /0 = f(TA ) Drain-source breakdown voltage

V{BR)OSS (T)) =b x V{BR)OSS (25°C)
SSP 296 SSP 296 10

1.1 1.20 ,-,-,---,----- ---- --
A
A
1.16
[0
0.9 b 1.14
0.8 1.12
1.10
0.7
1.08
0.6 1.06
1.04
-I--
I
0.5
0.4
1.02
.. -....
-1----
. . j. -_. -
100
0.3 0.98 f--~-j"'--- -1- . i 1---
I ' i
0.2 0.96 -~- -~ i ~ --- -- --..-J
0.1
0
0 20 40 60 80 100 120 O( 160
0.94
0.92
0.90
I--V-t-_I I 1-1- i-I
- 60 - 40 -20 0
Fj
20 40 60 80 100 120 "C 160
_T~
Typ. capacitance C = f(Vos) Forward characteristics of rever•• diode

parameter: Vos = 0, f = 1 MHz lr = f(Vso)
parameter: tp = 80 115, T, (spread)
r&~i~;~'!~rm "
103 BSP 296 11
pF ~==-==_--.-:=~~
5 ~\:::, - - - - - - - - - - - - - [",-
~- - -1-----.-----
[ 1, '::
-1 1\ -
10 2 r-..... f-- =-:::::=:-- 10 1=!==::::II=rt~~ 25°((98%)= :,-

5 ~~-~ ---r--t---t--- --i~ 5 f=f= -- ~- t= ~~5?1~(9:~%) .
~ ·---'-~--r--4----
~_r--.t--... ['SS_ 1-1- - - I - -- .... - ..
105
1
~~~!~~I~t~~t~ 1--
i----f--
1--- --
__ ~-=
--
- '--- - - - 5 ~f=
~~ 1
10- 1 l=!==j:lItlll==l=i= t=-=j.=-
~I- --
1- - - - _. - - --
1-'-= --~ -:.: :::" =--
f--.-t--+--- - - - - --- ---1--- 1-1-- I - -- - -- --- .. ---
1--1--+---1-- - ---- - - 1 , - H-II-Hf-t-+--f- -. -- --
--._---
100 ' - - - - ' - - - " - - - ' - - ' - ' - - - - . _.._-- ---- -
o 10 20 30 V 40 2 v
---Vos
Siemens 693

• Drain-source voltage Vos =,200V S
• Drain-source on-resistance RoS(on) = 2.00

BSP 297 BSP 297 067000-S068 SOT 223
Maximum Ratings

Drain-gate voltage \-bGR 200 V Ros =20 kO
Pulsed drain current I Dpuis 2.4 A h =25°C
temperature range Tot. -55 ... +150 °C
Climatic category 55 ... 150 ... 56 DIN IEC 68 part 1
Thermal resistance
Chip - air RthJA :583.3
694 Siemens
BSP 297
Condition
Drain-source V(BR)DSS 200 - - V Vas =OV
breakdown vottage I D =0.25 rnA
Gate threshold vottage VaS(th) 0.8 1.2 2.0 V VDS = Vas; ID =lrnA
Zero gate vottage IDSS - 0.1 1.0 J.lA 1j =2SoC; VDS =200V
IDSS 8.0 50.0 J.lA 1j =12SoC;VDS =130V

Vas =OV
Vas =10V
Drain-source on-state RDS(on) - 1.6 2.0 0 I D =0.6A
resistance
RDS(on) 2.0 3.3 0 Vas =4.SV
I D =0.6A
Forward transconductance g,. 0.5 0.9 S VDS ;,,2* I D * RDSon max
I D =0.6A
input cepecttance ClIO 420 630 pF Vas =OV

VDS =2SV
Output capacHance Co •• 40 60
f =lMHz
Reverse transfer Or .. 10 15
capacHance
Turn-on time ton t d(on) 8 15 ns Vee =30V

(t on =t d(on) +t,) t, 10 15 Vas =10V
100 150 I D =0.29A
Turn-off time t olf t dColf)
Ras =500
(t olf =t d(olf) +t,) t, 40 60
Reverse diode

current
Diode forward on-vottage VSD - 0.85 1.1 V Vas =OV

IF =1.2A
Reverse recovery lime trr J.ls VR =100V, IF = ID R
diFIdt = 100NJ.ls
Reverse recovery charge Qrr J.lC VR =lOOV, IF = I DR
d/ F Idt = 100NJ.ls
Siemens 695
BSP297
Permissible power dissipation Ptot = (TA ) Typ. output characteristics J0 = (Vos)
SSP /97
1.6
W ...... -
~.t
14
,-,- - \
"'
1\
1.2 .r\.
i\
1.0 -'-
'-'-
0.8 '- .- f---,- ~-- '-'-
i\
06 \
:-..
~
0.4 1-"-1-- -e-- 1- -
1-- -- -- _._. H- -1- 1-1--
02 1-1- '-'-
1-'- --'- - -'- ---- 1 - -
o '- .. -- _-,- - - 1\
o 20 40 60 80 100 120 140 °C 160
- - - - TA ---Vos
Permissible operating area 10 = t(Vos) Typ. transfer characteristic 10 = (VGs )

parameter: 0 = 0.01, Tc = 25·C parameter: Vos = 25 V, tp = 80 liS, TI = 25 OC
SSP /97
2.6 ,-.-
A
2.2
10
2.0 I--1--
j
1.8
1.6
I
14
I
12
II
1.0 I-- I---
0.8
0.6
I
0.4
I
02
1/
o .J
o 2 3 4 5 6 7 8 V 10
-Vos
696 Siemens
BSP297
Typ. draill-source on-state resistance f.!reln-Iource on-Itete reliallhCe

ROSlon) ,,;, ([D) ROSIOn) - (T)
parameter: VGs • 1j = 25°C parameter: Vas - 10 V./o "" 0.6 A. (spread)
BSP 197 BSP 297
6.5 5.0 r - - --- -_. _. _.- .. - .. _- -- ----
I I I I
Q -- -- -Vijs=2.5V l- I- - 3V- --- - -
Q I - -- - -. --- .--- -- -_. _ . .. - --
5.5 - - - r- - - - .- -
/
ROSfonl
:/ ROSlonl 4.0 - ~-
- r- - 1- -
50 -
li
1-- - - .. - ._. --I-
7
4.5 -
7 l- I- --I 3S
V /
4.0 /- 30
/
98%
p...- ~
35V
- - - -- V V
It
3.5
3.0 - .;.;;.. i..- ~
I---" i/ ~
v 2.5 I - -- I -
/
~I- {yp
2.5
2.0 -.
-- 1-= l- I-
I-
.::;:~
-- -I-
4V
2.0
1.5
","
"'/
,/
/"
/"
V
1.5 --_. ...- .' .....-

V
10V 9V 8V 6V 55V 5V4.~V 1.0
1.0 - --. ---- - .- - I-
05 ,-
o
-EI-t=
~ -=_.
t-- t--
os
o
o 0.2 0.4 0.6 =1=1=
0.8 1.0
~- L-. 1 _
1.2 A 1.4 -80 -60 -40 -20 0 20 40 60 80 100 120 °C 160
Typ. transconductance gr, = f(lo) Gate threshold voltage VaS(lh) = f(1j1

parameter: Vos = 25 V. tp = 80 liS. TJ = 25°C parameter: Vas = Vos. 10 = 1 rnA
(spread)
1.5 . ,- SSP 191
-,--- 5
BSP 291
S - r- - l-i- --I - V I- - - l-
/7 v I - f--
1.3
g" 1.2 -- -. _. /
1.1 ,-- - --
/
V
~
1.0 '.- - -
0.9 r- r-
I
Z 1- - 1- - - l- l- .
-. ,...-
0.8
V-- I - r- -
0.7 1-- -- - - r ;;;;:-
0.6 I -
t 98%
0.5
0.4
--
- .- - p,.
- -- ~ typ
r-
- '- -
r-.
~
I- ~
OJ - I- ~- -'" t- - 2%
02
0.1 -
:- -
-- --
- - -- I -
._- -- -~
- --- - - --
r- -
I- -
'- r--,.
o ,- .- _.- ' - - .-- - --

_L- ____
o
o 04 0.8 12 1.6 20 A 2.4 -60 -40 -20 0 20 40 60 80 100 120·C 160
-----10
Siemens 697
SSP 297
Continuous drain current to = '(TA ) Drain-source breakdown voltage

V(BRIOSS (7j) = b X V'BRIOSS (25°C)
BSP 297 SSP 191 10

065 120
A - A
I-- 1---- -- c - - I---I---
1.16
0.55
10
"""""
- - - - f-~
b 1.14
0.50
K 1.12 '-- - I--- v-
I 0.45
040
035
--
--
"" \
1.10 c- .- 1 - -
1 08
106
- --I -I -
I---I--- -
/
i-
/
_. V- I---
/
0.30 1. 04 '---
025 1\ 102
/
V- i-- - -- I -
0.20 ~f - 1.00 e-- --
0.98 I--- l2 1-
- -- /
015
010
:\ 0.96
0.94 /-
c_
-I---
0.05 0.92
--;/ i--
o- ------ , -. - - -- .-l 0.90 - _. - - - - - - ' -

o 20 40 60 80 100 120 O( 160 -60 -40 -20 0 20 40 60 80. 100 120 O( 160
-----r,.
Typ. capacitance C = f(Vos) Forward characteristics of reverse diode
parameter: VGS = O. 1 MHz ,= h= f(Vso)
parameter: tp = 80 Ils. 7j (spread)
SSP 197 11 sSP lq7 11
- 10 '
-1---
tT- .- -I--. 1---- e-- .-. -
c
pF ,\-\.
\1
-
[ISS
A .. __- .- - - --
- --
_.
I -=:\ -- = :-= - - --- - - = === £( ~=
7
= == --=c = = =
--I- s -.....;
-.; =--. 5 === - i. ~ =
---
--
--~
--
[ oss - - f -/>- 2S 0 ( typo
10 '
..........
---- Crss 10" - -

--
==
""-150 0 ( typo -
- ~Jl-ll
. .::. I .
5 =-=-
---
I- -
I- -
L-LJ _
-
.-
-.
- --,---
. -::--25°((98%)
_'::150 O( (98%)
i - -.
'-- L_
f-~~
f--I-c--
I--
10 0 L._
o 5 10 15 20 25 30 V 40 2 V 3
698 Siemens
SIPMOS N Channel MOSFET ssp 315

• Drain-source voltage Vos = -50V s
• Drain-source on-resistance ROSCon) = .950
• Total power dissipation p.o. = 1.5W

versions on 12 mm-tr.pe
BSP 315 B8P 315 067000-8027 SOT 223
Maximum Ratings

Drain-gate voltage I.ilGR -50 V RGS =20 kO
Continuous drain current 10 -1.0 A TA =25°C
Pulsed drain current IOPuIs -4.0 A TA =25°C
Gate-source voltage V.c ~20 V aperiodic
Power dissipation p.o. 1.5 W TA =25°C
Climatic category 55 ... 150... 56 DIN IEC 68 part 1 ,
Thermal resistance
Chip - air R.hJA :$83.3 KNJ
Chip - substrate rear side R.h JSR :$10
Siemens 699
BSP 315
ElectrIcal CharacterIstIcs
at TJ =25'C, unless otherwise specified.
Parameter Condition
Drain-source V(BR)OSS -50 V Vas =0

breakdown voHage 10 =0.25 rnA
Vas = Vos
Gate threshold voHage VaS(th) -0.8 -1.2 -2.0 V 10 =1 rnA
Zero gate voHage loss - -0.1 -1 Jl.A 1j =25'C

drain current -8 -50 Jl.A 1j =125'C
Vas =0
Vos =-5OV
Gate-source leakage I ass -10 -100 nA VGS =-20V, Vos =0

current
Drain-source on-state ROSeon) - .95 0 Vas =-10V

resistance 10 =-1.0A
DynamIc characterIstics
Forward transconductance g,. 0.25 .5 S Vos =-25V

10 =-1.0A
Input capacHance 400 Vas =0

CI•• pF
Vos =25V
f =lMHz
Output capacHance Co•• - 50
Reverse transfer Co•• 15

capac Hance
Turn-on time Ion 1 deon) 15 20 ns Vec =-3OV

(Ion =1 dCon) +t,) I, 10 15 VGS =-lOV
Turn-off time loll I dColf) - 100 130 10 =..().29A
Ras =500
(loll =1 deolf) +t f) If 40 55
Reverse dIode
Continuous reverse drain Is -1.0 A Te =25'C

current
Pulsed reverse drain

current
ISM - -4.0 A
Diode forward on-voHage Vso - -1 -1.5 V TJ =25'C, VGS =0

IF =-2.0A
700 Siemens
NPN Silicon Switching Transistors BSS79
BSS81
• High DC current gain

• Complementary types: BSS 80, BSS 82 (PNP)

for versions in bulk versions on 8-mm tape
BSS 79 B CE Q62702-S403 Q62702-S503 SOT 23
BSS 79 C CF Q62702-S402 Q62702-S501 SOT 23
BSS 81 B CD Q62702-S420 Q62702-S555 SOT 23
BSS 81 C CG Q62702-S419 Q62702-S559 SOT 23
Maximum ratings
Parameter Symbol BSS79 BSS81 Unit
Base current Is 100 rnA
Peak base current ISM 200 rnA
TA = 25 DC
Thermal resistance RthJA :::; 375 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 701
BSS79
BSS81

Ic = 10 mA
BSS79 40 - - V
BSS 81 35 - - V
Ic=10fiA
IE = 10 fiA
VCB=60V - - 10 nA
VCB =60V, TA= 150°C - - 10 fiA
VEB = 3 V
DC current gain hFE
Ic=100fiA, VCE=10V
BSS 79 B/81 B 20 - - -
BSS 79 C/81 C 35 - - -
Ic = 1mA,VCE=10V
BSS 79 B/81 B 25 - - -
BSS 79 C/81 C 50 - - -
Ic= 10mA, VCE=10V')
BSS 79 B/81 B 35 - - -
BSS 79 C/81 C 75 - - -
Ic = 150 mA, VCE = 10 V')
BSS 79 B/81 B 40 - 120 -
BSS 79 C/81 C 100 - 300 -
Ic = 500 mA, VCE = 10 V')
BSS 79 B/81 B 25 - - -
BSS 79 C/81 C 40 - - -
Ic = 150 mA, IB = 15 mA - - 0,3 V
I c = 500 mA, I B = 50 mA - - 1,3 V
Ic = 150 mA, IB = 15 mA - - 1,2 V
I c = 500 mA, I B = 50 mA - - 2,0 V
') Pulse test: t::s; 300 fis, D = 20;0.
702 Siemens
BSS79
BSS81
AC chararacterlstics Symbol min typ max Unit

Ic = 20 rnA, VCE = 20 V, f= 100 MHz
Open-circuit output capacitance Cob - 6 - pF
Vcs = 10V, f=1 MHz
Vcc = 30V, Ic = 150 rnA,
IS1 = IS2 = 15 rnA, VSE = 0,5 V
Delay time td - - 10 ns
Rise time tr - - 25 ns
Storage time tstg - - 250 ns
Fall time tf - - 60 ns
Test circuits
Delay and rise time Storage and fall time
30V 30V
"'100~s
200n
Osz.
Oscilloscope: R > 100 kn

C < 12 pF
tr < 5 ns
Siemens 703
BSS79
BSS81
Total power dissipation P tot = f (TA) Collector-base capacitance Ccb = f(VeB)

f= 1 MHz
mW pF
400 10'
"iO\ 5
r-
t 300
\.
-r-.
200 10'
I\,
5 r....
100
\
\.
\.
o .\
o so 100 5 10'
-7",. -VC8
Pulse handling capability rth = fIt) Transition frequency fT = f (I e)

K
'Vi
10 0
,
II '0.5
0,2
"
1 / ....
'\
0,1
0,05
, 0,02
/
0,01
0,005
2 000 1111
--' tpl--
t.
0= .E. J-Ln..
T I-- T-i
10- 3
10- 6 10,5 10- 4 10- 3 10- 2 10- 1 10 0 10' s 5 10'
-t
704 Siemens
BSS79
BSS81
Saturation voltage VeE sat = f (I el DC current gain hFE = f (I el

hFE = 10 VCEsat = f(Iel VCE = 10V
mA
103
5
V /
/VCE I VeE
175°C
I
~
- 2~.lcl \
-55°C
5
'If
5
10-1
o 0.2 0,4 0.6 0.8 1.0 1.2 V
- VIE ••"Vce ••,
Delay time td = f(Ie) Storage time tstg = f (I e)

Rise time t, = f(Iel Fall time tf = f (1 e)
--
\ '\ stg
\ \r-- bc.h FE-1O
5 hFE -20
1\ tf
h FE -l0
~
'->
I
5 5
-Ic -Ic
Siemens 705
PNP Silicon Switching Transistors BSS80
BSS82

• Complementary types: BSS 79, BSS 81 (NPN)

for versions in bulk versions on 8-mm tape
BSS 80 B CH Q62702-S398 Q62702-S557 SOT 23
BSS 80 C CJ Q62702-S399 Q62702-S492 SOT 23
BSS 82 B CL Q62702-S409 Q62702-S560 SOT 23
BSS 82 C CM Q62702-S408 Q62702-S482 SOT 23
Maximum ratings
Parameter Symbol BSS80 BSS82 Unit
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
706 Siemens
BSS80
BSS82

Collector-emitter breakdown voltage V(eR) CEO
Ic= 10 mA
BSS80 40 - - V
BSS82 60 - - V
Collector-base breakdown voltage V(eR) ceo 60 - - V
Ic=10llA
Emitter-base breakdown voltage VIeR) Eeo 6 - - V
lE = 10 itA
Collector cutoff current IceD
Vee = 50V - - 10 nA
Vee = 50 V, TA = 150 DC - - 10 llA
Emitter cutoff current lEeo - - 10 nA
VEe = 3V
DC current gain hFE
Ie = 100 itA, VeE = 10 V
BSS 80 B/82 B 40 - - -
BSS80 C/82 C 75 - - -
Ie= 1 mA, VCE =10V
BSS 80 B/82 B 40 - - -
BSS 80 C/82 C 100 - - -
Ic= 10 mA, VeE = 10 V')
BSS 80 B/82 B 40 - - -
BSS 80C/82 C 100 - - -
Ic = 150 mA, VeE = 10 V')
BSS 80B/82 B 40 - 120 -
BSS80 C/82 C 100 - 300 -
Ie = 500 mA, VCE = 10 V')
BSS80 B/82 B 40 - - -
BSS80 C/82 C 50 - - -
Ie = 150 rnA, Ie = 15 mA - - 0,4 V
Ie = 500 rnA, Ie = 50 rnA - - 1,6 V
Base-emitter saturation voltage') VeEsat
Ie = 150 rnA, Ie = 15 rnA - - 1,3 V
Ie = 500 rnA, Ie = 50 rnA - - 2,6 V
') Pulse test: ts; 300 Its, D = 20/0.
Siemens 707
BSS80
BSS82

Ic = 20 mA, VCE = 20 V, f= 100 MHz
Open-circuit output capacitance Cob - 6 - pF
Vcs = 10V, f=1 MHz
Vcc = 30 V, Ic = 150 mA, IS1 = 150 mA
Vcc = 6 V, Ic = 150 mA,
IS1 = IS2 = 15 mA
Storage time tSlg - - 80 ns
Test circuits

-30V -6V
+15V 3711
Eingang Eingang OSlo
Zo=5011 Zo=5011
tr < 2ns tr <: 2ns 1k
-~0-[
-~0-[
<>-.,.-{=:J----i-l
501/
200ns 200ns
708 Siemens
BSS80
BSS82
Total power dissipation Ptot = f( TA) COllector-base capacitance C cb = f ( Vce)

f= 1 MHz
rnW pF
400 10 2
5
-':'1
r-h
r 300
\.
-
200
i"..
I\,
5
100
"
\.
r-..
o '\
o 50 100 150 'C
-7;. -lice
Pulse handling capability rth = f(t) Transition frequency fT = f (/c)

(standardized) Vce=20V
K
W
10°
1 M'
'" I
'0,5
0,2
0,1
0,05
, 0,Q2
0,01
0,005
2
V
v~
10- 2 0=0 IIII
~
tp 2
0=-
T
f--- T---r
10-3 '" '" "'
10- 10- 10- 10- 10- 2 10- 1 10°
6 5 4 3 10' s 5 10 ' 5 10 2 5 10 3 rnA
-t -Ie
Siemens 709
BSS80
BSS82
Saturation voltage Ie = f(VeEsat. VeEsat! Delay time td = f(le)

hFE = 10 Rise time t, = f(le)
ns
'"
5
~ ....
103
f--
111111
VBE-OV, Vee·l0V ~
VI!( r- ~-- VBE -20V,Vcc -30V
i.I' VeE /
~
~
f--
II
111 f-- td ~.
5
\
5
,\
1)' 1\
5 \
i\ ""'~-
1)'"
o 01 0.4 0,6 0.& 1.0 11 lit 1.6 V 5 10'
- VSEmt' veE lOt -Ic
Storage time t stg = f (l cl Fall time tf = f (I e)
tst9 5
Vcc ·30V
r I \{7fE=20
"
hFE =1 .\\
5 :-- FE- 1 ...

jI'
y
iIlFE= 20
~
r, "1'-0
'-
5 10' 5 10 1 5 103 mA 5 10'

-Ie
710 Siemens
BSS80
BSS82
DC current gain hFE = f (l c)

VeE = 10V
10 3
- -
175 ·C
;'
]J "
25 ·C
-5 ·C
-Ie
Siemens 711
SIPMOS P Channel MOSFET BSS84

• Drain-source voltage I.b. = -50V
• Continuous drain current =
10 -0.13A
• Drain-source on-resistance RoSConl = 10.00
• Total power dissipation =
Po 0.36W

BSS84 SP Q62702-5568 SOT 23
Maximum Ratings

Drain-gate voltage IoiIOR -50 V Ros =20kO
Continuous drain current ID -0.13 A TA =30"C
Pulsed drain current 1Dpul. -0.52 A TA =2SOC
Peak gate-source voltage V•• :!:20 V aperiodic
temperature range T.I. -55... +150 °C
Thermal resistance
Chip - air RlhJA s350 KfIN Mounted on
Chip - substrate RlhJSR s285 Ceramic substrate
rear side 2.5cm2
712 Siemens
BSS84
at TJ =25°C, unless otherwise specHied.
DescrIption I Symbol Characteristics Unit Condition
min. I typo I max.
Static characterlattca
Draln·source V(BR)DSS ·50 V VGS =OV
breakdown vottage ID =·0.25 rnA
Gate threshold vottage VGS(lh) ·0.8 ·1.5 ·2.0 V VDS = VGS;/D =·lmA
Zero gate vottage I DSS . ·1.0 ·15.0 JiA TJ =25°C; VDS =·50V
·2.0 ·60.0 JiA 7j =125°C;VDS =·50V
Dss
' VGS =OV
I DSS 0.1 JiA 7j =25°C; VDS =·25V
VGS =OV
Gate-source leakage current I GSS ·1.0 ·10.0 nA VGS =·20V, VDS =OV
V GS =·10V
Draln·source on·state RDS(on) 5.0 10.0 0
' D =0.13A
resistance
Forward transconductance 9,. 0.05 0.08 S VDS =·25V
ID =·0.13A
Input capac~ance CI.. 30 45 pF VGS =OV

VDS =·25V
Output capacHance Co .. 17 25
f =1MHz
capacHance
Turn·on time Ion t d(on) 8 12 ns Vec =-30V

(Ion =1 d(on) +t,) I, 35 50 VGS =·10V
8 10 I D =-0.27A
Turn·off time I off I d(off)
RGS =500
(I off =1 d(off) +1,) I, 20 25
Reverse diode
Continuous source Is ·0.13 A

current
Pulsed source current ISM -0.52 A
Diode forward on-vottage VSD ·0.9 ·1.2 V VGS =OV

IF =·0.26A
Reverse recovery time trr - ns VR =-30V, 'F

= ID R
diF Idt = ·100NJis
Reverse recovery charge Or, JiC VR =-30V, IF = ID R

diF Idt = -100NJis
Siemens 713
BSS84
Switching Time Measurement
Test circuit Switching tim••
Vee
V VDS
90%
I Vas
90%
Permissible power dissipation versus temperatura Typical output characteristic

PD =fTA ID =fVD1
X Axis: TA I'e X Axis: VDS IV
YAxis: P D IW YAxls: 1 D IA
.. -,0 , p. 0.36
"VV
p. IOV
I-
[\ ::~~
,
-1V if!IJ II
[\
rtII
1(/ 5V
f/ '\
1\ -4 v
2
f\ 'J ,
1\ v
-, 0
f\ 'j .....
, -3~V-
/
1\ V
\ -2 !IV
1\ 2V
0 0
-, -2 -3 -4 -&
--TA - - - - " Vos
714 Siemens
BSS84
Safe operatIng area TypIcal transfer characteristIc

10 =fVOS ID =fVGS
X Axis: Vos I V X Axis: VGS IV
Y Axis: 10 I A YAxis: lolA
Parameter: D = 0.01, D =t pIT; Tc = 25'C Parameter: Vos = -25V; t p = BOps; 1j = 25'C
Rcs(on)'" VDs/lo
'I-Frf1_
__ T D t
II
'p' i,
20ps
I.
L, 1.-<
"
, 1m.
r' /
/
10ms
-5 I
r-: 1/
"
100m.
f',
II
-5
J
/
V
_10 1 V _'0 2
----vas
- - - v. s
TypIcal transconductance DraIn to source on resIstance (spread)
g,.= flo Roso.= fTj
X Axis: ID IA X Axis: T j I'C
Y Axis: g,. IS Y Axis: Roso. I0
Parameter: Vos = -25V; t p = BOiLs; T j = 25'C Parameter: VGS = -10V; 10 = -0.13A
P
V i.-
V RCS(on ) )
V
17
1/
1 /
17 1/ ""
J /v
rJ V V
",.
V /
V
/
-- . . . . v i-"" yp.
---_i,
-0.6
---_T, C 160
Siemens 715
BSS84
Typical capacitances
C=fV DS
X Axis: VDs/V
YAxls: C IpF
Parameter: VGS =0; f = 1MHz
~
~ I--
" ""'-'" "'" ,..

"'"
- I-
- Go ..
- - - VDS
Drain currant Gate thrashhold voltage (spread)

I D = fTA VGSlh =fT1
X Axis: TA I'C X Axis: TJ I'C
Y Axis: I D I A Y Axis: VGSlh I V
Parameter: VGs= VDS ; I D = -1mA
V
'D A
V GSUb )
,
" '\ [- 4
r'\:
· \
· ,
\
I-
- .-- - "
t--
-
· \ - - ." - r-.
i--
0
- -
100 c·
--TA - - TJ
716 Siemens
BSS84
Typical drain-source on-stale resistance

RDSO" = fI D
X Axis: I D I A
Y Axis: R DSo" I 0
Parametar: VGS ; 1j = 2SoC
Vc. ==
'JV _35 .v ,v ·W
n
-2SV
"
Rcs(on )
V
V / 1/ I;
v ,/
I.....:' t.-- V 1---'"
V ,-- I- I-f.- '-f.- ~ -8\1
_9V ·lQV
'0
Typical ravarse diode forward voltage (spread)
IF=fVSD
X Axis: VSD IV
Y Axis: I F I A
Parameter: t p =BD!Is; TI
,,'
" . 2S : p.
F 1ft
, 'C typo 7r7 IA O-C 98
" II 25 :9 %
I
J
-,
---v"
Siemens 717
SIPMOS N Channel MOSFET BSS87

• Drain-source voltage Vos = 240V s

BSS87 KA Q62702-S506 SOT 89
Maximum Ratings

Drain-gate voltage \!baR 240 V RGS =20 kO
Pulsed drain current IDpUIS 1.16 A TA =2SoC
Power dissipation Po 1.0 W TA =2SoC
Thermal resistance
Chip - air RthJA $125 K/VV
718 Siemens
BSS87
Condition
Static chsracterlstlcs
Drsln-source V(BR)DSS 240 V Vas =OV
breskdown vonage ID =0.25mA
Gate threshold vonage Vas(th) O.B 1.5 2.0 V Vos = Vas;/o =1mA
Zero gate vottage loss 4.0 60.0 }.IA 1j =25'C; Vos =240V
IDSS B.O 200 }.IA 1j =125'C;Vos =240V

Vas =OV
IDSS 200 nA 1j = 25'C; Vos =60V

Vas =OV
Gate-source leakage current I ass 10.0 100 nA Vas =20V, Vos =OV
Vas =10V
Drain-source on-state ROS(on) 4.0 6.0 0 I D =0.29A
resistance 0 Vas =4.5V
5.7 10.0
10 =0.29A
Forward transconductance g,. 0.14 0.29 S Vos =25V
10 =0.29A
Input capacitance C, •• 90 140 pF Vas =OV

Vos =25V
Output capacitance Co •• 20 30 f =IMHz
Reverse transfer Cr •• 6.0 9.0
capacitance
Turn-on time ton t d(on) 5 B ns Vee =3QV

(t on =t d(on) +t,) I, B 12 Vas =10V
25 30 10 =0.2BA
Turn-off time t off I dlo'!)
(I off =1 d(olf) +t ,) Ras =500
I, 22 2B
Reverse diode
Continuous source Is - 0.29 A
current
Diode forward on-vonage Vso 0.B5 1.4 V Vas =OV

IF =0.5BA
Reverse recovery lime Irr - ns VR =30V, IF = 10 R

diFIdt = 100N}.Is
Reverse recovery charge Orr - }.IC VR =3OV, IF = 10 R
diFIdt = 100N}.Is
Siemens 719
BSS87
Test circuit Switching times
Vcc
Permissible power dissipation versus temperature Typical output characteristic

PD = fTA tD =fVDS
X Axis: TAloe X Axis: VDS IV
YAxis: PD IW YAxls: tD fA
... p "f'i
v,
rt!J /4.8 Ii
i\
,v, '1/, I I
--
10
\
1\
\
l' 1"'- ,/1 ".-
, v
Ix
v
[II
rl ., l -I - •. v
1\ .. V
I-'"
r-. ....,
fj
\
1\
\
'I
'1
.
V
1/1
.
•. v
I~
o 1\ V 8.5
o
--T. ---~Vo.
720 Siemens
BSS87
Safe operating area TypIcal transfer characterIstic

10 =tVos 10 =tVas
X Axis: vos f V X Axis: Vas IV
Y Axis: 10 I A YAxls: 10 fA
Parameter: 0 = 0.01, 0 =tp IT; TC = 25°e Parameter: VDS = 2SV; t p = SO/ls; 1j = 25°e
ROS(on) = VDI /lp It_~-
10'
-y P-t'
A I
r:
I.
I
~ N
I
I
I" I !I
I
I
II
J
'0' a 10' 5 10 2
- - V••
5 V10 l
----VG. "
Typical transconductance DraIn to source on resIstance (spread)

g,. = flo RDson = tTl
X Axis: lolA X Axis: TI loe
YAxls: g,./S Y Axis: RDSon I 0
Parameter: VDS = 2SV; t p = SO/Is; TJ = 25°e Parameter: Vas = 10V; 1D = O.29A
v~
VV
n
VV )
17 V
1/ 1/
1/
I) V .. 1/
V l/
II V
V
V
V
typo
I ,. ./
...-
1 .... f-'"
0
C· 1&0
----'. ---_T,
Siemens 721
BSS87
C = fV DS
X Axis: VDS I V
y Axis: C IpF
Parameter: VGs=O; f =lMHz
,,'
pF
~
I~\
"-
r- r-
"'- Co••
u r••
-Vos
Drain current Gate threshhold voltage (spread)

f D = fTA VGSlh = fT J
X Axis: T A I"C X Axis: TJ I"C
Y Axis: f D I A Y Axis: VGSlh I V
Parameter: VGs= VDS ; f D = lmA
I- r--.
'. "- VGS(th )
I\.
"\
'\
\
\
\
\ .." -
\
- .;,:,::"
r-
- -
1\
-- ."-- r-
.....
o
o
--TA -_T,
100 c· 180
722 Siemens
BSS87
Typical drain-source on-state resistance

RDson =fl D
X Axis: ID fA
Y Axis: R DSon f n
Parameter: VelS ; 1j = 25"C
Va -
v
I--"Y v
I-- I-- -- '"
I
--'. .<
Typical reverse diode forward voHage (spread)

IF=fVSD
X Axis: VsD/V
YAxls: IF fA
Paramater: t p = BOps; TJ
150 ~P'
"'~~m
~ 25:
!SO ;111
fj
Ii
".'~/~m
,
--~Vs.
Siemens 723
SIPMOS N Channel MOSFET BSS 119

• Drain-source voltage ~S = 100V
• Drain-source on-resistance RoS(on)= 6.00

BSS 119 SH Q62702-8631 SOT 23
Maximum Ratings

Drain-gate voltage \obGR 100 V Ra. =20kO
Continuous drain current /0 0.17 A TA =28"C
Pulsed drain current I Opul. 0.68 A Tc =25°C
Peak gate-source voltage V•• :t20 V aperiodic
Thermal resistance
Chip - air RthJA 0$350
Chip - substrate rear side Rth JSR 0$285
Ceramic substrate
15mm x 16.7mm x 0.7mm
724 Siemens
BSS 119
Condition
Drain-source V(BR)D.S 100 - V Ves =OV
breakdown vottage 'D =0.2SmA
Gate threshold vottage VeSUh) 1.6 2.0 2.6 V Vos = VeB;/D =lmA
Zero gate vottage loss - O.S tJ A 1j =2S·C; VDS =100V

drain current Ves =OV
loss - S.O tJA 1j = 12S·C;VDS =100V

Ves =OV
'DSS - 100 nA 1j =2S·C; VDS =60V

Ves =OV
Gate-source leakage current less 10.0 100 nA Ves =20V, VDS =OV
Vas =10V
Drain-source on-state RDS(on) 3.2 6.0 0 10 =0.17A
resistance
- 4.7 10.0 0 Vas =4.5V
I D =0.17A
DynamiC characteristics
Forward transconductance g,. 0.10 0.20 - S VDS =25V
ID =0.17A
Input capacttance C ••• - 40 60 pF Vas =OV
VDS =25V
Output capacitance Co •• 10 IS f =IMHz
Reverse transfer Cr•• 4.0 6.0
capacitance
Turn-on time ton t d(on) - S 8 ns Vcc =30V

(t on =t d(on) +t r) tr - 8 12 Vas =10V
t 12 16 I D =0.2BA
Turn-oft time t off cl(off)
Ras =SOO
(t off =t d(off) +t ,) t, - 17 22
Reverse diode
Continuous source
current
Is - 0.17 A
Puised source current ISM - 0.68 A
Diode forward on-yottage Vso 0.8S 1.4 V Vas =OV

IF =O.34A
Reverse recovery time t rr - - ns VR =30V, 'F = 10 R
diF Idt = looAltJs
Reverse recovery charge Orr - tJC VR =30V, 'F = 10 R

dl F Idt = 100AltJs
Siemens 725
ass 119
Vcc
VDS
90%
90%
VGS
90%

PD =fTA ID =fVDS
X Axis: TA lOG X Axis: VDS I V
Y Axis: P D IW YAxis: 1 D IA
.4
I. I PD 0.36
'"
8V
'0
(., "'~ ~ ~
OV
.ov
\ 8V
0
\
\
7V
'""'- rl/1 / 4V
, \ /
\
\
r/J/ \
\
VI/'
"
\ .ov
I .1
"- .....
7 ........ ,-
1\
'v
1\ f
0
C
1\
HIO
o
o
.ov
-_T, ----Vos
726 Siemens
BSS 119
Safe operating area Typical transfer characteristic

ID =fVDS ID =fV as
X Axis: VDs/V X Axis: Vas IV
V Axis: ID IA V Axis: I D IA
Parameter: D = 0.01, D =tp IT;· Tc = 25'C Parameter: VDS = 2SV; t p = 80jls; 7j = 25'C
ROB' ..)- VOB/lo / t-~-n ...
-T I-t
'0'
A
I.
'p-
20111
/0
1..
'\
1,0" 'm.
I
\
10m.
I
'\
100mi
I
/
II
'0' a 10 J 5 V10'
o
o
V 10
-VDS Va,
Typical transconductance Drain to source on resistance (lipread)

g,"=f/ D Rglon = fT)
X Axis: ID IA X Axis: T) I'C
V Axis: g,"IS V Axis: RDSon 10
Parameter: VDS = 25V; t p = 80jls; TJ = 25'C Parameter: Vas = 10V; I D = O.17A
k
n
g"
/'
I
./
/ V
0.' / I
V /
/ V ..
V /
II ./,/
L
.// V
I V typo
I
-,..,.,
.. ----10
A 0.5 -eo
---_.TI
c· '80
Siemens 727
BSS 119
Typical capacltancaa
O=IV DS
X Axis: VDI/V
YAxls: O/pF
Parameter: Val =0; I = 1MHz
1.'
pF
1.'
\\
Jl CIII
\
\"
--- ~
- _ c,..
1.'
•• v
---v.s

ID =ITA VOlth =IT J
Y Axis: I D I A YAxis: VeSth IV
Parameter: Vos= VDS ; I D = 1mA
.11
r-- t""""'\ V
'. A Va'Uh )
"\
'\
\
\
\
-'- -- - -,...,... ...
...,
...
- ... ...
'"
• . .. 100
--TA
c· 1110 100
- TJ
c·
728 Siemens
BSS 119

RDlo" =f'D
X Axis: 'D
fA
Y Axis: R Dlo" f 0
Parameter: Vas; 1j = 2S0C
..
n
RDS(on ,
Vas""
, ., . .
1
/
/
...... V
V /
::t::: - 1--''"'
V
-
.i. I), ,
I-'v
=.'"
'"
--'. •3 A
Typical reverse diode forward voltage (spread)

'F=fVSD
X Axis: VsDfV
YAxis: , F fA
Parameter: t p =80J,rs; TJ
,.,
.,
. ,,~.
'01 P"
c--" "" .
"" "
Ij
I
'II
10"
---v,.
2
Siemens 729

• Drain-source voltage lIba = 100V
• Drain-source on-resistance RoSlon) = 6.00

BSS 123 SA Q62702-S512 SOT 23
Maximum Ratings

Drain-gate voltage \<baR 100 V Raa =20kO
Pulsed drain current 1Dpulo 0.68 A TA =2SOC
Peak gate-source voltage VIO ±20 V aperiodic
Power dissipation Po 0.36 W TA =2SOC
temperature range TOil -55... +150 ·C
Thermal resistance
Chip - air RlhJA s350 KNJ Mounted on
Chip - substrate Rlh JaR s28S Ceramic substrate
rear side 2.5cm2
730 Siemens
ass 123
Electrical Characteristic.
Condition
Drain-source VCBA)DSS 100 - V VOl =OV
breakdown vottaga 'D =0.25mA
Gate threshold vottage Vas(th) 0.8 1.5 2.0 V YD. = VOI;/D =lmA
Zero gate vottage

drain current '
Dss
- 0.1 1.0 j.lA 1j =25'C; VDI =100v
VOl =OV
2.0 60.0 j.lA 1j =125'C;VDI =100V

Dss
' Vos =OV
I Dss 10.0 nA 1j -2S'C; VDS -2OV

Vas =OV
Gale-source leakege current I GSS 10.0 SO.O nA Vos =20V, VDS =OV
VOl =10V
Drain-source on-stale RDICon) 3.0 6.0 n I D =0.17A
resistance
4.1 10.0 n Val =4.5V
I D =0.17A
Dynemlc characteristics
Forward transconductance g,. 0.08 0.17 S VD. =25V
ID =0.17A
Input capac~ance C, .. 40 60 pF Val =OV
VDI =25V
Output capacttance Co .. 10 15
f =lMHz
Reversa transfer Cr•• 4.0 6.0
capac~ance
Tum-on time Ion 1 dCon) - 5 8 ns Vcc =3OV

(Ion =1 dCon) +t ,) t, - 8 12 VOl =lOV
Turn-off time toll t dCoII) - 12 16 I D =0.2BA

Ral =500
(t oil =t dColll +t,) t, - 17 22
Revenae diode
Continuous sou rca

current
Is - - 0.17 A
Diode forward on-vottage VSD 0.85 1.3 V Vas =OV

IF =O.34A
Reverse recovery time trr - ns VA =3OV, 'F = 'D A
dl F /dt = looA/j.ls
Reverse recovery charge 0" j.lC VA =30V, 'F = 'D R
dl F /dt = 100A/j.ls
Siemens 731
ass 123
Vcc

PD =fTA ID =fVDS
X Axis: TA I"e X Axis: V DS I V
Y Axis: PD IW YAxls: 1 D IA
.4
I p. 0.36
10
"",I sv
r--- .v
""'~ ~ r:-
f.
1\ av 4.5V
1\ 1· 7~
~
4V
\ V,
1\ - .sv
\ V \
1\ f/ \
\ I ,
.v
1
•1 /" .....
1\
1\
..... ro-
'-
. •v
~
-_T. \
2V
0
C 1110 o
----v.s•
o
732 Siemens
BSS 123

'D=fVDS 'D =fV as
X Axis: VDS I V X Axis: Vas IV
YAxls: 'D
IA YAxls: IA 'D
Parameter: D = 0.01, D = t piT; Tc = 25'C Parameter: Vos = 2SV; t p = SOils; 7j = 25'C
...
'D'A
" 1'4
1,.·,
II
\ 100mf
1\
/
1/
/
V
15 10\
VGS "
Typical transconductance Drain to aource on resistance (spread)
g,.= flD Roso.= fT J
XAxis: 'o/A X Axis: TJ I'C
Y Axis: gr. IS Y Axis: RDso• I n
Parameter: VDS = 2SV; t p = SOils; TJ = 25'C Parameter: Vas = 10V; 'D = O.HA
I- n
,./
./ RDS(onJ
/'
/ /
/ I'D /
/ /
V ..
/
II V
/'
, L.......v V
/ /'
typo
(
_1--"""
A O.S
----'. ---_T,
Siemens 733
BSS 123
Typical capacltancllS
C = 'VDI
X AxIs: VDs/V
Y Axis: C IpF
Parameter: VGI =0; , = 1MHz
'0'
p-
01 ..
\\
\'
\ , """-
-
~
Crl •
• 0
-Vos
Drain current Gate threahhold voltage (spread)

I D = tTA Valth = tTl
X Axis: TA 1°C X Axis: Tl 1°C
YAxls: I D IA Y Axis: VaSth I V
Parameter: Vas VDS ; I D = = lmA
...
I. •
- 1\ ValUb )
'\
'\
\
\
.... ...
\
,
r-.
- . -... '::::' ...
-- -- , -t-..-
I
~
-
0
.0
-_T.
100 180
o
-eo 104
- TJ
C 180
734 Siemens
ass 123

RDSon = fI D
X Axis: ID fA
YAxis: R DSon f n
Parameter: VGS ; 1j = 2S'C
n
VOl'"
. ,. .. ." <V .
)
I
/
V
/' /
--
./
/'
/
~ ::::.-
/1
V
".
/
>V
_I--"
"
~"
,
, •• A
--I,
IF=fVSD
X Axis: VsDfV
YAxls: I F fA
Parameter: t p =8D1Js; TJ
1SO : !9
'rJ II ~ '0"."
'CI~II
-,,,,,, ""
1!J'r
2
---v,o
Siemens 735

• Drain-source voltage ~s = 240V
• Continuous drain current Ic = 0.10A
• Drain-source on-resistance Ro8(on) = 16.00
• Total power dissipation Pc = 0.36W

BSS 131 SR Q62702-8565 SOT 23
Maximum Ratings
Drain-source voltage Vcs 240 V

Drain-gate voltage \,bGR 240 V ROI =20kO
Continuous drain current Ic 0.10 A TA =26"C
Pulsed drain current I Cpul. 0.40 A TA =25"C
Peak gate-source voltage Va. :!:20 V aperiodic
Power dissipation Pc 0.36 W TA =25°C
temperature range T.ta -55 ... +150 °C
Thermal resistance
Chip - air RthJA :s350
Chip - substrate rear side RthJSR :s285
Ceramic substrate
25mm x 25mm x 0.7mm
736 Siemens
BSS 131
Condition
Static characterlatlcs
Drain-source V(BR)OSS 240 V Va8 =OV
breakdown vottage 10 =0.25mA
Gate threshold vottage Va8(th) 0.8 1.4 2.0 V VOl = Val;lo =1mA
Zero gate vottage 'DSS 1.0 15.0 flA 1j =25°C; VOl =240V
drain current Val =OV
'DSS 2.0 60.0 flA 1j = 125°C; VDS =240V

Val =OV
'DSS 30.0 nA 1j -25°C; VDS =130V

Vas =OV
Gate-source leakage current I ass 1.0 10_0 nA Vas =20V. VDS =OV
Val =10V
Drain-source on-state RDS(on) 12.0 16.0 n I D =0.1A
resistance n Val =4.5V
15.0 26.0
10 =0.1A
Forward transconductance g,. 0.06 0.14 S VOl =25V
ID =0.1A
Input capacHance C,.. 60 90 pF Val =OV
VOl =25V
Output capacHanee Co•• 8 12 f =1MHz
Reverse transfer Cr •• 2.5 5.0
capacHance
Turn-on time ton t d(o.) 5 8 ns Vec =3OV

(Ion =1 d(on) +t,) I, 8 12 Val =IOV
Turn-off time lolf t d(o") . 12 16 10 =0.2BA
(1 0 " =1 d(ofl) +1,) t, . 15 20

Raa =500
Reverse diode

current
Diode forward on-vottage Vso 0.8 1.2 V Va. =OV

I, =0.2A
Reverse recovery time trr ns VR =3OV. IF = 10R

dl, Idt = 100A/fl8
Reverse recovery charge Orr flC VR =3OV. IF = 10R

dl F Idt = 100A/fls
Siemens 737
BSS 131
Test circuit Switching tl_
Vee
Pulse
Generator V.ut
f·····························l

Pc =fTA Ie =fVes
XAxis: TA I'e X Axis: Ves IV
V Axis: Pc IW V Axis: I c I A
.Z4
p - 3
p.
\ 'v
I.v.
1\ TYrJ, 4.'
f\ .
8Vf-:
Y/II t'\
v
4V
rA
3V
1--'1-
1-1- y
, 1\ r~ 1/
f\ I)
1\ 1
IW,II
f\ "- .,
1 ~
1\
1\ j
".
..
,
100
\ ,II V 7.6
--TA ----1'00
738 Siemens
BSS 131
Safe operating range Typical transfer characteristic

/0 =fVos /0 = fV GS
X Axis: Vos I V X Axis: VGS IV
YAxis: /o/A Y Axis: /0 I A
Perameter: D = 0.01. D = t pIT; Tc = 2S'C Psrameter: Vos = 2SV; t p = BOils; 1j = 2S'C
Ros"., ~vostlo It_~- 0

-T 1_,
,,'
A
10
'p.
2 0 11'
I, I'
, ~
1
110'
1\ \
:\
I
I
II
\1
(> 10' 5 10'
n (> V 10'
I 10
V" V"
Typical transconductance Drain to source on resistance (spread)
gh = flo Ros."= fTI

X Axis: /0 I A X Axis: TI I'C
Y Axis: gh IS Y Axis: Ros." I 0
Parameter: Vos = 2SV; t p = BOils; TI = 2S'C Parameter: VGS 10V; /0 = = 0.1 A
n
g" v~
ROs(on)
j"
VV
V
V L /
V
/
/ .
/
V "L
/
/ V /
V V typo
V
./
VV V
::: ........
,., C 160
---_I, ---_Tj
Siemens 739
BSS 131
C = (V es
X Axis: Ves I V
Y Axis: C IpF
,,'
pF
to'
",
\ ....... ' -
r--
-"""k,
- - Cns
- - - VDS
Drain currant Gata threshhold voltage (spread)

Ie = (TA VGllh = (TI
X Axis: TA 1°C X Axis: TI 1°C
Y Axis: Ie IA Y Alds: VGllh I V
Parameter: VGs= Ves; Ie = 1mA
V
'D • V CSUh )
" ~
1 4
r\.
"-
\
\ .... ...
\
r- - -
\
1\
r-
..
'- - ,--
typo
- -k,
t-
r-
0
-_T. -_T,
100 C
740 Siemens
BSS 131
Typical draln-sourca on-atata raslstanca

RDlon = fI D
X Axis; Ip fA
Y Axis; R Dlon f 0
Paramater: VGS ; 1j = 25"C
"I v.,
I", I·v
R.",~)
,.. I
.. J
J
I'"
II
..
....... /'
-- L..-- V
I- r.,,,
Ifll~rev~
"
Ir
1""
" r;ov~--.v7V
. .1 .2 A.24
--'.
Typical ravarsa dloda forward voItaga (apraad)
IF=fVSD
X Axis; VIDfV
YAxis; I F fA
Parameter; t p =80/1s; T,
",
, ,~ , %
l' ])
f2i ;
10 "'
11 t- h Fc ..
""
"'
--v,. .
Siemens 741

• Drain-source voltage "bs = SOV
• Drain-source on-resistance ~S(onl = 3.50
• Total power dissipation fb = 0.36W

B55138 55 Q62702-S566 50T23
Maximum Ratings

Drain-gate voltage IobGR 50 V Rcs =20kO
Pulsed drain current I Dpul. 0.88 A TA =25°C
Peak gate-source voltage Vg• ±20 V aperiodic
temperature range T.tg -55 ... +150 °C
Thermal resistance
Chip - air RthJA ~3S0 K/W
Chip - substrate rear side Rth JSR ~285
Ceramic substrate
2Smm x 25mm x 0.7mm
742 Siemens
BSS 138
Condition
Drain-source V (BR)DSS 50 V Vas =OV
breakdown vo~age ID =0.25 rnA
Gate threshold vo~age VaS(th) 0.8 1.2 1.6 V VDS = Vas JD =lrnA
Zero gate vo~age loss 0.5 J1A TI =25'C; Vos =50V

loss - 5.0 J1A ~ =125'C;VD8 =50V

Vas =QV
IDSS 100 nA ~ =25'C; Vos =30V

Vas =OV
Gate-source leakage current I ass 10.0 100 nA Vas =20V. VDS =OV
Vas=10V
Drain-source on-state RDS(on) 1.8 3.5 0 I D =0.22A
resistance 0 Vas =4.5V
2.8 5.8
I D =0.22A
Forward transconductance gr. 0.12 0.20 - S VDI =25V
ID =D.22A
Input capacitance CI •• 40 60 pF Val =DV
VDI =25V
Output capacitance Co .. 15 25 f =lMHz
capacitance
Turn-on time ton I d(on) 5 8 ns Vce =3OV

(Ion =1 d(on) +1,) I, 8 12 Vas =10V
12 16 I D =D.29A
Turn-off time tOil I dColI)
(/011 =1 d(olll +t r)
Ras =500
If 17 22
Reverse diode

current
Diode forward on-vo~age VSD 0.9 1.4 V Vas =OV

IF =O.44A
Reverse recovery time Irr ns VR =30V. IF = ID R
diF Idt = lDOA/J18
Reverse recovery charge Orr J1C VR =3OV. IF = ID R

dl F Idt = 100A/J1s
Siemens 743
ass 138
SwItchIng TIme Measurement
Vec

PD =fTA ID =fVDS
X Axis: TA I'C X Axis: VDS IV
YAxls: P D IW YAxis: ID IA
P,
.4 .8
1DV
I
, P,~ 0.36
\
8V
'v ~ 'l 4.8V
ev
j1
\ '/,\
4V
.3
\
\ Ii \
,\
.. 1// , 3.8V
\
Y ., .....
\
\
., / -- 3V
2.6V
1\
2V
o
o
\J ,,
4 V •
v,s
744 Siemens
ess 138
Safe operating area Typical tranafer characteristic

'D =fVDS 'D =fVas
X Axis: vDs/V X Axis: Vas IV
YAxis: IA 'D YAxis: 'D
IA
Parameter: D = 0.01, D =t pIT; Tc = 2S'C Parameter: VDS = 2SV; tp = 80jJs; TI = 2S'C
D_~
t
T
'1-~-I-t
0
__ T
'0'
Ip'
30".
'D
100".
'D
" ,,.,
1··
I
"
"
10m.
I
"'- 100m.
~ I
II
/
10' 5 V 10 2
----vas
---VDS

g,.="D RDSon = fT J
X Axis: 'D IA X Axis: TJ I'C
Y Axis: g,. IS Y Axis: RDSon I Q
Parameter: VDS = 2SV; t p = 80jJs; TJ = 25'C Parameter: Vas = 10V; 'D = 0.22A
gf,
n
i--"'"
[,
ROS(on)
[ /1-" /
V /
/
/ ""
/ V //
II
/
V ,/
,/
I ,; V typ_
II
I
-- ..,. ..,. i--"'"
----'. ----TJ
Siemens 745
BSS 138
C = fV DS
X Axis: Vos I V
Y Axis: C I pF
Parameter: VGS =0; f = lMHz
10'
,F
CI..
1\
\
\
r--...
- Co ..
n'
---v"

10 = fTA VGSlh = fT J
X Axis: TA I'C X Axis: T J I'C
Y Axis: 10 I A Y Axis: VGSlh I V
Parameter: VGs= Vos; 10 = lmA
...
I
'. A VCS(th )
.2
""'I'..
""'\
,
.~ ..... 98%
"'-\ t--.. ,
..... ,
r---~
\
typo
, ,
...... .... ,
\ '- '" ........
-I- ......
\
'-
. - - TJ
c
746 Siemens
BSS 138

ROSon = f1 0
XAxis: lolA
Y Axis: R OSon I 0
11
.,
n
.,$V
"'" .35V ~, ~5V
/
J.
/ ./
V ./
V J
-- ---
",.-
.....- ..... V f-""'" I--' I--"
L--' .$V
:: .,
7V
~ l
"
--10
Typical reversa diode forward voltage (spread)

IF =fVso
X Axis: VSD IV
Y Axis: I F I A
Parameter: t p =8~s; TI
,,'
IF' 150 ;
rJ
''C:~.
'-"1-- " : "
r-- .,. re: "
XI
,
- - - vso
Siemens 747
SIPMOS N Channel MOSFET SSS 139
• 51PMOS - depletion mode

• Drain-source voltage 'i.bs = 250V
• Drain-source on-resistance ~S(on) = 1000

B55139 5T Q62702-5612 SOT 23
Maximum Ratings

Drain-gate voltage 'i.bGR 250 V RGS =20 kO
Pulsed drain current 10Pul. 0.12 A TA =25°C
temperature range T.,s -55... +150 °C
Thermal resistance
Chip - air RlhJA ::;350
Chip - substrate rear side RthJSR ::;285
Ceramic substrate
25mm x 25mm x 0.7mm
748 Siemens
BSS 139
CondHlon
Drain-source V(BR)OSV 2S0 - - V Vas =-3V
breakdown vottege '0=0.2SmA
Gate threshold vo~age VaS(th) -1.B -1.0 -0.7 V VOl = 3V; '0 =lmA
Zero gate vo~age 'osv - 100 nA 7j =2SoC; Vos =2S0v
drain current Val =-3V
'osv 200 jJA 7j =12SoC;Vos =2S0V

Vas =-3V
'osv - r, =2SoC; Vos =-V

Vas =OV
Gate-source leakage current , ass - 10.0 100 nA Vas =±20V,VDS =0V
Vas =OV
Drain-source on-state ROS(on) - - 100 0
'0 =14mA
resistance
Forward transconductance gt. O.OS 0.07 - S VOl =25V
'0 =O.04A
Input capac~ance C ••• SO pF Val =OV
Vos =2SV
Output capac~ance Co •• 10 - f =IMHz
Reverse transfer Cr •• - 3 -
capacitance
Turn-on time ton t d(on) 10 - ns Vee =30V

(t on =t d(on) +t r J tr - 20 - Vas =-2V... +5V
Turn-off time t olf t d(olf) - 70 '0 =O.ISA

(tolf =t d(olf) +t tJ Ras = SOD
If 120 -
Reverse diode
Continuous source
current
's 0.04 A
Pulsed source current ISM - 0.12 A
Diode forward on-vo~age Vso 0.9 1.2 V Vas =OV

'F =O.OBA
Reverse recovery time Irr - ns VR =100V, 'F =
d/ F Idt = 100A/jJs
10 R
Reverse recovery charge Orr jJC VA =looV, IF = 10 A

dl F Idt = 100A/jJs
Siemens 749
BSS 139
Vec
v 90%
VOS
I VGS
90%
90%
Permissible power dissipation versus temperature Safe operating area

Po =fTA '0 =fVDS
X Axis: TA loe X Axis: VDs/V
V Axis: PD IW V Axis: 'D IA
Parameter: 0 = 0.01. 0 = t pIT; Te = 25°e
ROS(on) :: vos 110
,,'
A
\
10
\ lr -I"
110"
[\
\ \ \
1\
\ ,o·~
\
1\ I
o ~
o
", 5 10'
- - v..
5 V10 3
750 Siemens
BSS 139
Drain to source on resistance (spread) Drain current

RDso • = fT J I D = fTA
X Axis: TJ I·e X Axis: TA I·e
Y Axis: RDso • I (l Y Axis: I D I A
Parameter: Vas =0; I D = 14rnA
240
n '. A
/
.03 ""1"'- \
/ ..., \
// .02
1\
100
V
I/'
---_.T)
C 180
.. --TA
Gate threshhold voltage (spread) Typical reverse diode forward voltage (spread)
VaSlh = fT J IF =fVSD
X Axis: T j I·e X Axis: V.D/V
YAxis: VaSlh IV YAxls: IF IA
Parameter: Vas = 3V; I D = 1rnA Parameter: t p =8Ops; Tj
",
VCSUh ) " .
I
-- - - ""
=
'--
T
; j-li
I'" "C;98
....... l[r-- ''''1'''

r-.
r--...
, typo
".
1_"
.... r- ........
~~ ........,
"
-...
_T, 100 C 180 2

---Vso
Siemens 751
SIPMOS P Channel MOSFET BSS 192

• Drain-source voltage Vos = -240V S
• Drain-source on-resistance Ros(o.) = 20.00
• Total power dissipation Po =1.0W

BSS 192 KB Q62702-8602 80T89
Maximum Ratings

Drain-gate voltage ~GR -240 V Rca =20 kO
9ontinuous drain current 10 -0.15 A TA =23"C
Pulsed drain current I Dpuls -.6 A TA =25°C
Peak gate-source voltage V., ±20 V aperiodic
temperature range T,t. -55 ... +150 °C
Thermal resistance
Chip - air RthJA :;;125 K!W
752 Siemens
BSS 192
Electrical Charllcterlatlc.
Condltlon
Drain-source V (BR)DSI -240 - V Vas =OV
breakdown vobage ID =-0.25 rnA
Gate threshold vobage Val(th) -0.8 -1.5 -2.0 V VDI = Val;lD =-1 rnA
Zero gate vobage I DSI - -4.0 -60.0 IlA 7j =2S·C; VDS =-24OV
drain current Val =OV
IDBI -8.0 -200 IlA 7j =125"C; VDI =-24OV

Val =OV
I DSS - - -0.2 IlA 7j =2S·C; VDS =-60V
Vas =OV
Gate-source leakage current I GSI -10.0 -100 nA Vas =-2OV, VD• =OV
Drain-source on-state RDS(on) 10.0 20.0 0 Val =-1OV

resistance I D =-O.15A
Forward transconductance g,. 0.06 0.12 - S VDI =-2~
ID =-0.15A
Input capacitance C. oo - 70 10S pF Va.=OV
VDI =-2~
Output capacitance Ca •• - 20 30 f =1MHz
Reverse transfer C roo - 8.0 12.0
capacitance
Tum-on time 1on 1d(on) - 8 12 ns Vcc =..3(N

(Ion =1 d(on) +t ,) I, 30 4S Val =-1OV
15 20 I D =-O.25A
Tum-off time 1off t c[~f!)
Ral =500
(t orr =t d(o'!) +t ,) t, - 30 45
Reverse diode
Continuous source
current
Is - - -0.15 A
Pulsed source current ISM - - -0.60 A
Diode forward on-voltage VSD - -0.85 -1.2 V Val =OV

IF =-O.3A
Reverse recovery time t rr - 130 - ns VR =-100v,1, =0. 5A
dl F Idt = -100A/lls
Reverse recovery charge Orr 300 - nC VR =-100V,/ F =0. 5A
dl" Idt = -100A/lls
Siemens 753
ass 192
Teat circuit Switching tlmea
Vcc
v Vos

PD =fTA 'D =fVD1
X Axis: TA loe X Axis: VDI IV
V Axis: Po IW V Axis: 'D IA
t.t
p ~1fv
p. w
-.3
-.-. lh -, -. .v
'. I"'.W V ~
-to
IlI.'111 1/
1\
r\
\
I W
U r<v
r/v II'
V __ f- 4.0
'/
/ V
, 4V
1\ J. .. ~-
\ ~jI, /'
1\ rl.
,.
,/
H"
I.
2.'
o \ 2V
o
----v"
754 Siemens
BSS 192

ID=fVDI ID =fV ol
X Axis: vDS I V X Axis: Vos IV
YAxis: JD IA YAxls: J D IA
Parameter: D = 0.01, D =Ip IT; Tc = 2SoC Parameter: VDS = ·25V; I p = BClIls; 1j = 2SoC
ROS(on) =VDsllo It_~- -.32
_T P-t
10'
A
ID
'D
l,D'
,
tp·
20jl'
I .. ' I
I
10m,
'I 100ml
11 '.1
I
I
/
10·'
",
.. /
----Vas "
Typical tranaconductance Drain to source on resistance (spread)
g,.=fI D RDSoft fT J =
X Axis: ID IA X AxIs: T J 1°C
Y Axis: g,. I S Y Axis: RDSOft / 0
Parsmeter: VDI = ·25V; t p =BClIls; TJ = 2SOC Parameter: Vos= -10V; ID = ·0.15A
•..
9,s • n
I /
ROS(on )
/
/
./
L /
/ / " .
/
/ V
/
V /'
/ V /'
I
/
/ ' typo
V
I - I-' I-'
I-"'"
•• '.1
----tD
... ---_T, 100 C 160
Siemens 755
BSS 192
C =fV ol
X Axis: vos/v
Y Axls: C I pF
Parameter: VG8=O; f =1MHz
10'
oF
10' "-F': 0..

\
""-
Co ..
10' I\,
".
- - - v•.

10 = fTA VGllh =fTI
YAxls: I D IA Y Axis: VGSlh I V
Parameter: VGs= VDS ; I D = ·1mA
-.11 -s
'. V
'" '\
v asCth )
1 -4
1'\
\
1'\ -.
\
'\..
~
... .... ...
\ ...
\ ~
r-
-- --
,.::::"
... .. ... -r-.

...
...
I -
° 40
--T. -'0 -_T,c

100
756 Siemens
BSS 192

ROlon = fI 0
X Axis: 10 fA
Y Axis: R 080n f 0
Parameter: VGS ; 1j = 2SoC
Va =
n 3V , 4V S ·sv
)
.. /
I
V
",,/ ",
f-"f-"
~~0I.9V -ov J,
-.3 A .34
-"
IF =fVSD
X Axis: VsofV
YAxis: I F fA
Parameter: t p =8~s; TI
'0'
'F •
1 "C;~.
1"11 i--",. ~; .%
2 "C;
'IV " ;;. %
10"
o
---v" -.
Siemens 757
NPN Silicon Switching Transistors PZT 2222;PZT 2222A
• High DC current gain: 0.1 to 500 mA

• Complementary types: PZT 2907 (PNP)
PZT 2907A (PNP) E
C

PZT 2222 ZT 2222 Q62702 - Z2026 SOT-223
PZT 2222A ZT 2222A Q62702 - Z2027 50T-223
Maximum Ratings
Parameter Symbol PZT2222 PZT2222A Unit
Collector-emitter voltage VeEo 30 40 V
Collector-base voltage VeBo 60 75 V
Total power dissipation. TA s25°C1) PIOI 1.5 W
Thermal Resistance
Junction -ambient 1) s83.3 IKIW
1) Package mounted on an epoxy printed circuit board 40mm x 40mm x 1.Smm.
1 For detailed dimensions see chapter Package Outlines.
758 Siemens
PZT 2222;PZT 2222A
Characteristics
at TA =25 °C, unless otherwise specified.
Imax• .I
Parameter / SymbOl/ Values UnIt
min. Ityp.
DC Characteristics
Collector-emitter breakdown voltage V(ElR)CEO V
Ic = 10 rnA, IB = 0 PZT 2222 30 - -
PZT 2222A 40 - -
Collector-base breakdown voltage V(BR)CBO V
Ic = 10 pA, IB = 0 PZT 2222 60 - -
PZT 2222A 75 - -
Ie = 10 pA, Ie = 0 PZT 2222 5 - - V
PZT 2222A 6 - -
VCB=50V,/e=0 PZT 2222 - - 20 nA
PZT 2222A - - 10 nA
VCB = 50 V, Ie =0, TA = 150°C PZT
PZT
2222
2222A
-
-
-- 20
10
pA
pA
Emitter-base cutoff current leBo nA
VeB =3 V, Ic=O - - 10
Collector-emitter cutoff current Icev nA
VCE = 30 V,-VSE = 0.5 V - - 50
Emitter-base cutoff current IEBv nA
VCE = 30 V,-VBE = 0.5 V - - 50
Ic=0.1 rnA, VcE =10V 35 - - -
Ic = 1 rnA, VcE =10V
Ic= 10 rnA, VCE = 10 V
50
75
-- -
-
-
-
fc=150mA, VCE=10V 100 -- 300 -
Ic=500 mA, VCE ::; 10 V PZT 2222 30 - -
PZT 2222A 40 - - -
Collector-emitter saturation voltage 1) VCEsat V
Ic = 150 mA, IB = 15 rnA PZT 2222 - - 0.4
PZT 2222A - - 0.3
Ic = 500 mA'/B = 50 mA PZT
PZT
2222
2222A
-
-
-- 1.6
1.0
Base-emitter saturation voltage 1) VBEsat V
Ic = 150 mA, IB = 15 mA PZT 2222 - - 1.3
PZT2222A -- - 1.2
Ic = 500 mA'/B = 50 rnA PZT 2222 - 2.6
PZT2222A - 2.0
1) Pulse test conditions: t ;;;; 300ps; D = 2%
Siemens 759
PZT 2222;PZT 2222A

Transition frequency fT 300 - - MHz
I C = 50 rnA. VCE= 20 V, f = 100 MHz
Output capacitance Cabo - - 8 pF
VCB = 10 V, f = 1 MHz
Input capacitance C ibo - - 25 pF
VEB = 2 V, f = 1 MHz
Input impedance hi. kO
I C = 1 rnA; VCE = 10 V, f = 1 kHz 2 - 8
I C = 10 rnA; VCE = 10 V, f = 1 kHz 0.25 - 1.25
Voltage feedback ratio hr. X1Q- 4
Ie = 1 rnA; VCE = 10 V, f = 1 kHz - - 8
Ie = 10 rnA; VCE = 10 V, f = 1 kHz - - 4
Small-signal current gain h fe -
I C = 1 rnA; VCE = 10 V, f = 1 kHz 50 - 300
Ie = 10 rnA; VCE = 10 V, f = 1 kHz 75 - 375
Output admittance hoe (.lS
Ic = 1 rnA; VCE = 10 V, f = 1 kHz 5 - 35
Ie = 10 rnA; VCE = 10 V, f = 1 kHz 25 - 200
Collector-base time constant rb'Cc - - 150 ps
IE = 20 rnA, VCB = 20 V, f = 31.8 MHz
Noise figure NF - - 4 dB
Ic=100 (.lA, VcE =10 V,Rs=1 kO,f=l kHz
Switching times
Vcc = 30 V, VBE = 0.5 V, Ic = 150 rnA, td - - 10 ns
IB1 = 15 rnA tr - - 25 ns
Switching times ts - - 225 ns
Vcc = 30 V,Ic = 150 mA.IB1 = IB2 = 15 rnA tf - - 60 ns
760 Siemens
PZT 2222;PZT 2222A
Turn-on time (see Fig.2) when switched to ICon = 1SOmA;/Bon = 1SmA
+10AV-
n _
J I Vi
j tp L
Fig.2 Input waveform and test circuit for
determining delay,rise and turn-on time
Turn-off time (see Fig.3) when switched to ICon =1SOmA;/Bon = 15mA
to cut-off with -/Boff = 1SmA
+30Vn~
j tp
L
determining storage,fall and turn-off time
Pulse generator (see Fig.2 and 3) Oscilloscope (see Fig.2 and 3)
frequency f= 150Hz rise time tr~ Sns

pulse duration tp=200ns output impedance Zi = 10Mn
rise time tr~ 2ns
output impedance Zo = son
Siemens 761
PZT 2222; PZT 2222A
Total power dissipation P'ol = (TA) Transition frequency IT = I (lc)

MHz'VeE = 20 V, (= 100 MHz
2.0 r-r-....,-,-,--r-r-r-r--.--.-.---r-,.-, 10 J RR=l=!llTlr_=r-=n,nnr-o-Trrr, m
P,ot
W t-t--t-'H-t--t--'I- -f-
fl
=
5 t--t-++tttllt--t--H·tHlIIt-+-++ttttH
t 1.5 ~ ~ '-I--t-IH--r-t-t-t-+-"I-+-i 1 - _.-.

/~
1- -
2 f--IH-l-HUlI-1H-!HIlIIIt->.:
-
1. 0 1-f--I--I--I-I-+'>.I-t-+-iH--t-H-l 101 =tIL -
l-~
'--
5 -_.
\ - 1--'
05 f-+-t-H-I-+-+-I-+-I~'I.-IH--I-I
. r-r-f- -.- ·-t--IH-+-+-I~I-~-++-I
21-1-1-1-+-It
o
o
....-
50
- '- .-.. - ,,-.- -
100 °C
- -, ISO
-
10' L-.L-l..l..LLlllL._
100 5 10'
-TA
Saturation voltage Ie - (VBES.t. VeE ..,) DC current gain hFE - f (/ e)

hFE - 10 VeE - 10V .•
mA
IO J
5 -=t= ':" --
/
VV C(
Ii VI(= '=
-
- . - f-
t-
~
II
zJJCI ~
10' .. - ~ ....
5 'L --- ~-
.=-c .-- ... -
:= ..::. -55'C
!-- - -- - 1 - " -
--. _. - f - ' -. -f- 1-
-f-. -
f- : -
5
r!
5
-
f-+-
10'
, ,
o 0.2 0.4 0,6 OJ to 1l V 10'
- VR.lt,VCl.ot -/c
762 Siemens
PNP Silicon Switching Transistors PZT 2907;PZT 2907A

• Complementary types: PZT 2222 (NPN)
PZT 2222A (NPN)
E
c

PZT 2907 ZT 2907 Q62702 - Z2028 SOT-223
PZT 2907A ZT2907A Q62702 - Z2025 SOT-223
Maximum Ratings
Parameter Symbol PZT 2907 PZT 2907A Unit
Total power dissipation, TA:525'Cl) P IOI 1.5 W
Junction temperature Tj 150 'c
Storage temperature range Ts1g -65 to + 150 'c
Thermal Resistance
Junction - ambient 1) IR tl1JA :5 83.3 IKtW
1) Package mounted on an epoKy printed circuit board 40mm K 40mm K 1,5mm
0) For detailed dimensions see chapter Package Outlines
Siemens 763
PZT 2907;PZT 2907 A
Characteristics
Parameter Unit
DC Characteristics
Collector-emitter breakdown voltage V(SR)CEO
Ic = 10 rnA, IB = 0 PZT 2907 40 - - V
PZT 2907A 60 - - V
Collector-base breakdown voltage V(SR)CSO
Ic = 10 pA, Is = 0 PZT 2907 60 - - V
PZT 2907A 60 - - V
Emitter-base breakdown voltage V(SR)ESO

IE = 10 pA, Ie = 0 5 - - V
Collector-base cutoff current 'CBO
VCS = 50 V, IE = 0 PZT 2907 - - 20 nA
PZT 2907A - - 10 nA
Vcs=50 V, Ie =0, TA = 150°C PZT 2907 - - 20 llA
PZT 2907A - - 10 pA
Emitter-base cutoff current leBo
VEs =3 V, Ic=O
,cEv
- - 10 nA
VcE =30 V,+VBE=0.5 V - - 50 nA
Collector-base cutoff current lesv
Vce =30 V, +VBE =0.5 V - - 50 nA
Ic=0.1 rnA, VcE =10V PZT 2907 35 - - -
-
---
PZT 2907A 75 -
Ic= 1 rnA, VcE =10V PZT 2907
PZT 2907A
50
100
-
--
--
Ic= 10 rnA, Vce=10V PZT 2907 75 - -
PZT 2907A 100 - - -
Ic=150mA, VcE =10V PZT 2907 100 - 300 -
PZT 2907A 100 - 300 -
Ic=500 rnA, VcE =10V PZT 2907
PZT 2907A
30
50 -
- -
-
-
-
Ie = 150 rnA, Is = 15 mA - - 0.4 V
=
Ic 500 mA,/s = 50 rnA - - 1.6 V
Base-emitter saturation voltage 1) VSEsat
Ie = 150 rnA, Is = 15 mA - - 1.3 V
=
Ie 500 mA,Is = 50 rnA - - 2.6 V
1) Pulse test conditions: t ~ 30°115; D =2%
764 Siemens.
PZT 2907;PZT 2907A
AC Characteristics
Ic=20mA, VcE =20V, f=100 MHz 200 - - MHz
VCB = 10 V,f= 1 MHz - - 8 pF
Input capacitance C,b
VEB = 0.5 V,f = 1 MHz - - 30 pF
Vcc =30 V, Ic = 150 mA, IBI = 15 mA
(see Fig.2)
Rise time t, - - 40 ns
Vcc = 6 V, Ic = 150 mA, IBI =/ B2 = 15 mA
(see Fig.3)
Storage time tsig - - 80 ns
Siemens 765
PZT 2907;PZT 2907 A
Turn-on time (see Fig.2)

when switched to-Icon =150mA;-/Bon =15mA -30V
...---( I Va

determining delay,rise and turn-on time
Turn-off time (see Fig.3)

when switched to-Icon = 150mA;-/Bon = 15mA
to cut-off with + IBoff = 15mA +15V -6V

determining storage,fall and turn-offtime
Pulse generator (see Fig.2 and 3) Oscilloscope (see Fig.2 and 3)
frequency f=150Hz rise time tr~ 5ns

pulse duration tp=200ns output impedance Zj: 10MQ
rise time tr~2ns
output impedance Zo=50Q
766 Siemens
PZT 2907; PZT 2907A
Total power dissipation PIOI = I (TA ) Transition frequency IT = I (l c)

HHz'VCE = 20 V. 1= 100 MHz
2.0 10 1 ,-- - .
1-- -
Wf-
t-- -
1--
~ot fr
5 t-- f--
-f- . 1- 1-1-- f---
1.5 1--
1
t f-f\ I-f--
V
-1--
1'\ 2
r-
P\--1\
l"\_
1.0 I- f'\ ~- ,:::- - -
~
10 1
I- ~-
I- r- - . f-.-
f-~ 5 1--- -
H - -- --.- - --1\ - 1-1-
0.5 t---
-- -f- - -- 1- -!\,-H-
f- - --- - - - -- -t-I\'I-f- 2 t-- -
1-1-+--1-1--1-+-1-1--1-1-+-+-+....1-1 !-+-
- -1- -1-1-I-+1--f--jH-I-i-f\
o 1-'._-'-..L...I--L...l_L..J..-L..L1-1_-'-LJI 10'
o 50 100 ·C 150 10° 5 la' 5 10 1 5 10 1 rnA
----Ie
Saturallon voltaga Ie = ((VBE,al. VCE.a,) DC current gain hFE = l(lel

hFE = 10 =
VCE 10 V
W
5 - -- - --- 1=-
Ic 1- . I-
t-
1~ 1.1 Vcr 1.1 VII[ r-
5 175°(
r-
10'
II
10 21=
I.--
1-- 1U
25°C
t'\
r-:
5 -
l- I- ~~, DC
~
5
t- 1-
'I)'
5
1--
10-1
o 01 0.4 0,6 O.~ 1.0 11 1/. 1.6 V
_ Vir",,' VcrIGt
-/c
Siemens 767
NPN Silicon SWitching Transistor PZT 3904
• High DC current gain 0.1 to 100 mA

• Complementary type: PZT 3906 (PNP)
E

PZT 3904 ZT 3904 Q62702 - Z2029 SOT-223
Maximum Ratings
Parameter Symbol PZT 3904 Unit
Total power dissipation, TA:s 25°C I) P 101 1.5 W
Storage temperature range TSIg -65 to + 150 °C
Thermal Resistance
Junction - ambient 1) :s83.3 IKIW
.) Package mounted on an epoxy printed circuit board 40mm x 40mm x 1.Smm
Mounting pad for the colleclor lead min 6cm 2
'J For detailed dimensions see chapter Package Outlines
768 Siemens
PZT 3904
Characteristics
Parameter I I
Symbol Values
min. Ityp. Imax. .I
Unit
DC Characteristics
= =
Ic 1 rnA, IB 0 40 - - V
Ic = 10 pA, IB = 0 60 - - V

IE = 10 pA, Ic = 0 6 - - V
Collector-base cutoff current ICB~
VcB =30 V,/E=O - - 50 nA
Collector -emitter cutoff current ,CEV
VCE = 30 V,-VBE = 0,5 V - - 50 nA
Base-emitter cutoff current
=
VCE 30 V,-VBE = 0,5 V '
BEV - - 50 nA
Ic = 0.1 rnA, Vce = 1 V 40 - - --
le= 1 rnA, VCE = 1 V 70 - -
=
Ic = 10 rnA, VCE 1 V 100 - 300 -
Ic=50 rnA, VCE = 1 V 60 -- - -
=
Ic = 100 rnA, VCE 1 V 30 - -
=
Ie = 10 rnA, IB 1 rnA - - 0.2 V
le=50 mA,IB=5 rnA - - 0.3 V
=
Ie = 10 rnA, Ic 1 rnA - - 0.85 V
le=50 mA,le=5 rnA - - 0.95 V
1) Pulse test conditions: t ;;; 300ps; D =2%
Siemens 769
PZT 3904
AC Characteristics
Ic = 10 rnA, VCE =20 V, f= 100 MHz 300 - - MHz
Collector-base cpacitance Cob
VCB = 5 V,f= 1 MHz - - 4 pF
VEB = 0.5 V,f = 1 MHz - - 8 pF
Noise figure F
Ic = 100 lIA,vCE = 5 V,Rs = 1kn, - - 5 dB
f= 10 Hz to 15.7 kHz
Input impedance h lle
Ic = 1 rnA, VCE = 10 V, f = 1 kHz 1 - 10 kn
Open-circuit reverse voltage transfer ratio h '2a
Ic = 1 mA,VCE = 10 V, f= 1 kHz 0.5 - 8 10-4
Short-circuit forward current transfer ratio h 21e
Ie = 1 mA,vCE = 10 V, f= 1 kHz 100 - 400 -
Open circuit output admittance h 22e
Ic = 1 mA,VeE = 10 V, f= 1 kHz 1 - 40 \lS
Vcc=3 V, Ie = 10 rnA, IBI = 1 rnA
VBEIOIf) = 0.5 V
Vce =3 V,/c = 10 rnA,
'B' = 'B2 = 1 rnA
Storage time t. ,g - - 200 ns
Fall time t, - - 50 ns
770 Siemens
PZT 3904
Switching times
Turn-on time (see Figs 2 and 3 ) when switched from
-VSEoft=0.5Vto ICon = 10mA;/s on = 1mA
Vi (V)
+ 10.6
+3V
--"""-~Vo
I
I
=t=Cs
I
I
Ol--~+-~----------~r-~ I
I
-0.5
Fig.2 Input waveform;tr < 1ns;tp = 300ns Fig.3 Delay and rise time test circuit;total
Ii = 0.02 shunt capacitance of test jig and
connectors Cs <4pF;
scope impedance ~ 10MCl
Turn-off time (see Figs 4 and 5 )

ICon =1OmA; Ison =-/soft =1mA
Vi (V)
+3V
+ 10.91----,...------...
O~~------~--------~~
.C
",-......-vVo
I
I
I
I
s
-..
I
I
-9. 11--~------t--+'-----../
Fig.4lnput waveform; tr< 1ns; Fig. 5 Storage and fall time test circuit;total
lOjls<tp< =500jls;5 =0.02 shunt capacitance of test jig and
connectors Cs <4pF;
scope impedance III 10MCl
Siemens 771
PZT 3904
Total power dlsslpatlpn Plot = f( TA) Saturation voltage Ie = {(VBE S8" VCE .a')
hFE =10
2.0 r- - 2 /
We- I- mA
= '=.-= = ~1=1==-'=-
c- ---
-~-
-_.- 1 - - - /
Ie 107 /
P.ot I- 1-1- - - i - --
I- - ---- -- 1=l - f-
r- - ---
:1
;-
1.5 --- I -
1 c- - \ t 5 I-
I--I--
H-I--I-I'\ - -
c- - _. -- '\ - 1-
r-r- - --- - -- --r-
- -t--t--I-t--H
-c- - -
I-
-
~f -I -
1_0 I-I--l-I-I--~-
I--c-----
'-1-+--11-1--+--+--11-+-1
--f\-
i'c:E
I VaE
--iF -
f- -- -- -- --- - -- -- \-- -+- --I-r-
1-1- - ' - 1 - -
+-1-1--1--11-1-
--\
-!-)l\,---_H++-l 5
= -- - '-- - --. 1=
0.5 1-
1--- - --- -- -- --I-f--'\ - c-
-- - -1- - -- -- -c--'\ r-
-1- - f-- -- - --1- -i--HI'd--j
o _ _ _-:: t::-- _~ ~ 1-::::l::- IS 10° _L _ _ _ ! ~_. ___ ~
o SO 100 D( 1')0 o 0,2 0,4 0,6 0,8 1,0 V 1,2
DC current gain hFE = , (I cl

VCE = 10 V, normalized
10'
)EJ 25°( f"\

/.
_55°(
5
V
V ~
, ~
772 Siemens
PNP Silicon Switching Transistor PZT 3906

• Complementary type: PZT 3904 (NPN)

PZT 3906 ZT 3906 Q62702 - Z2030 50T-223
Maximum Ratings
Parameter Symbol PZT 3906 Unit
Collector-emiller voltage VCEO 40 V
Total power dissipation, TA !': 25·C 1) Pial 1.5 IN
Storage temperature range T'19 -65 to + 150 ·C
Thermal Resistance
Junction - ambient I) !':83.3 IKIW
I) Package mounted on an epoxy printed circuit board 40mm x 40mm x 1.5mm
Siemens 773
PZT 3906
Characteristics
at TA = 25 0 C, unless otherwise specified.
Parameter Unit
DC Characteristics
Collector-emitter breakdown voltage V(8R)CEO
Ic = 1 mA, IB = 0 40 - - V
Collector-base breakdown voltage V(8R)CBO
Ic = 10 IlA, 18 = 0 40 - - V
Emitter-base breakdown voltage V(BR)eBO

Ie = 10 IlA, Ic = 0 5 - - V
VcB =30 V, le=O - - 50 nA
Collector-emitter cutoff current Icev
Vce =30 V, + VBe =0.5 V - - 50 nA
Collector~base cutoff current
VeE = 30 V; + VBE = 0.5 V '
Bev
- - 50 nA
Ie =0.1 mA, VeE = 1 V 60 - -
-
--
Ic = 1 mA, Vce = 1 V 80 ·
Ic = 10 mA, Vce = 1 V 100 · 300
. ·
Ic=50 mA, VeE = 1 V 60 · . ·
Ic = 100 mA, VeE = 1 V 30 · ·
Collector-emitter saturation voltage 1) VCesa '
Ic = 10 mA,le = 1 mA . · 0.25 V
Ic = 50 mA,le = 5 mA . · 0.4 V
Base-emitter saturation voltage 1) VeEsa'
Ic = 10 mA,Ic = 1 mA - · 0.85 V
Ic = 50 mA,/c = 5 mA - · 0.95 V
1) Pulse test conditions: t ? 30011S; D = 2%
774 Siemens
PZT 3906
AC Characteristics
Ic = 10 rnA, VCE = 20 V, f = 100 MHz 250 - - MHz
Vcs=5V,f=1 MHz - - 4.5 pF
VES = 0.5 V,f= 1 MHz - - 10 pF
Noise figure F
Ic = 100 pA,VCE = 5 V,Rs = 1kU, - - 4 dB
f= 10 Hz to 15.7 kHz
Input impedance h l1e
Ic = 1 mA,VCE = 10 V, f= 1 kHz 2 - 12 kU
Open-circuit reverse voltage transfer ratio h 120
Ic = 1 mA,VCE = 10 V, f= 1 kHz 0.1 - 10 10.4
Short-circuit forward current transfer ratio h210
Ic = 1 mA,VCE = 10 V, f= 1 kHz 100 - 400 -
Open circuit output admittance h220
Ic = 1 mA,VCE = 10 V, f= 1 kHz 3 - 60 pS
Vcc = 3 V, Ic = 10 rnA, la 1 = 1 rnA
VaE(off) = 0.5 V
Vcc =3 V,/c = 10 rnA,
101 = IS2 = 1 rnA
Storage time tslg - -- 225 ns
Fall time t, - 75 ns
Siemens 775
PZT 3906
Switching times
Turn-on time (see Figs 2 and 3) when switched from
+ VBEoff = 0.5V to -Icon = lOmA;-IBon = lmA
(V)
-3V
275n
·-~{'Vo
Fig.2 Input waveform;tr < 1ns;tp = 300ns Fig.3 Delay and rise time test circuit;total
6 = 0.02 shunt capacitance of test jig and
connectors Cs<4pF;
scope impedance =10Mn
Turn-off time (see Figs 4 and 5 )

-ICon =1OmA;-IBon =IBoff =1mA
Vi (V)
+ 9.1
O~--------~~------~-
-10.91---+'---
Fig.4lnput waveform;tf < lns; Fig. 5 Storage and fall time test circuit;total
10115< tp< = 50011S;6 = 0.02 shunt capacitance of test jig and
connectors Cs <4pF;
scope impedance = 10Mn
776 Siemens
PZT3906
Total power dlsslpat10n PIOI - '( T~) Saturation voltage Ie = (VeE salo VCE sal)
hFE =10
2,0 ...-r-r-r-r.-r-r,-'T"--'-'-'-'-' 2
W r- -I- I- -1-- rnA
-I-e- Ie
P.ot -I- f--- --, - l- 10 2 I=R~=I==J:=l==l==I==l:::.=l
--- 1-1----
1,5 h
f -I- t 5 I---'I-I--jf--l- --- ---
-I- 1\'-1-
e-
~
to 1\ -I-
--r- - - I-
'- -- - - I-
- I-
i\ -1- 5
0,5 K_ 1-
--- e- -- -- -\
- - -1- -,\ I-
- \-
r- --- 1--1- 1-- -
o ---'-- ---- -~ 0,2
-
0,4 0,6 0,8 V 1,0
0 50 100 DC 150
----- VSlsOI ,VUlal
DC current gain hFE = ((Ie)

VCE = 1 V, normalized
.-- i- I-
'=r-
5 -
-
-
- mw\
125°(
~
V ...
I-
_SSD( -
5
......
,
5 10' rnA 10 2
~
-Ie
Siemens 777
NPN Silicon Darlington Transistors PZTA 13; PZTA 14

• Complementary types: PZTA 63 164 (PNP)
E
c

PZTA 13 PZTA 13 Q62702 - Z2033 SOT-223
PZTA 14 PZTA 14 Q62702 - Z2034 SOT-223
Maximum Ratings
Parameter Symbol PZTA 13 PZTA 14 Unit
Collector-emitter voltage VCES 30 30 V
Base current la 100 mA
Total power dissipation, TA:S 25· C I} Ptot 1.5 W
Storage temperature range T. ,g -65 to + 150 ·C
Thermal Resistance
Junction - ambient 1)
IR 'hJA :s83.3 IKIW
1) Package mounted on an epoxy printed circuit board 40mm x 40mm x 1.5mm
Mounling pad for the collector lead min 6cm 2
'} For detailed dimensions see chapter Pa.ckage Outlines
778 Siemens
PZTA 13; PZTA 14
Characteristics
Parameter I I
Symbol Values
min. Ityp. Imax. I
_
Unit
DC Characteristics
Collector-emitte~ breakdown voltage V(BR)CES
Ic = 100 11A 30 - - V
= =
Ie 100 11A, Is 0 30 - - V
=
IE 10 pA, Ie 0 = 10 - - V
Collector-base cutoff current Icso
VCE = 30 V, IE = 0 - - 100 nA
VeE =30 V,/E=O,TA = 150·C 10 llA
VEB = 10 V,/e =0 - - 100 nA
DC current gain hFE
Ic =10mA, VcE =5V PZTA 13 5000 - - -
PZTA 14 10000 - - -
Ie = 100 rnA,VeE = 5 V PZTA 13 10000 - - --
PZTA 14 20000 - -
Collector-emitter saturation voltage VCEsal
Ic = 100 rnA, IB = 0.1 mA - - 1.5 V
Base-emitter saturation voltage VBEsal
Ic = 100 rnA, Is = 0.1 rnA - - 2.0 V
AC Characteristics
Ic = 50 rnA, VCE = 5 V, f= 100 MHz MHz
1) Pulse test conditions t ~ 300115,0 = 2 %
Siemens 779
PZTA 13; PZTA 14
Total power dissipation P 'O' = ((TAl Transition frequency 'T = ((lcl

VcE =5 V
MHz
2.0
VI
~ ,- ._,- -~ - -··-r~~-~~T~
-I--/--- -/---1-1--+--1-1-1-
10 1 r-= _~. ,- -
I-- _. I---- -
H--+-+--1·-1-- -. - -+--I-+-+---+-J.-..-j I--
I-- 1---·
~ot -1- - -- -- - - - .. - --1-1-1- f, 5
t
1.5
-[-- - -I- -- - - -+·-I-I-f--J.-..-j
.--1--- _. - - -I- -1-1-
f...,
1--1--1--1\ I- - -+--+-+--+--+-I-+-+--l----1
1--1-- \ .
I 1--
.--
-lS-H-+-+--H--t---+-H
H-+--H-~~~++-~~~+4~
1.0 H-l---l-i-l-t-'\l-1-J-l-\-l---+-1-l
1-~-I--I-\---+-1-lHt"I--·-+--H--l----1
I---- --
I----
5 I--
1\ I----
0.5 H--+--l--;I---t---j--f-i-+-I\I--,\--I-+-I--i I---- 1- -
1-+- -H-I-- . - - ~I-
I-- - -- - .-1-- - - - - r-I\ 2 ---
1-1- -I- --. - -
1-- -1--:---· -·---1- '"
o L-- _ l_,--_ _ , 10'
o 50 100 °C 150 10° 5 10' 5 10 1 5 10lmA
-r. ·_·--'-1,
Collector cutoff current ICBO = f (TAl DC current gain hFE = '(lei

nA VCE = 30 V VCE = 5 V
10' ~~-r-r_- r::<:::: _._1-'='::: 106 ..
F- 1-·'
5 I=~I= ~ 1=
l- I-
I'BO l-
I-
1 10
l
= •/ I~I
lb--l• I--
E
~
125 DC
i-+':t
15°1. ~
~
~
'11 \-
-
I... max. ~ _55°( I-- F
101~.mII
~-+-f-
1/ 10' i..-' -.
1~'.Bm
fll--
I/typ.
••
100 LL....L..L..L....L..L..L....L...L.J.-L.L.J.-L..J
5
-
10 1
o 50 100 150 DC 10-' 5 10° 5 10' 5 10 1 5 10 1 mA
--T,. -Ie
780 Siemens
PZTA 13; PZTA 14
Base-emiHer saturation voltage Ie = ((VSE .B')

hFE = 1000
10' 1=1==11--8_=_1-= -- - _ FI:=- 10' --

-.-
t= I ~- ~= 1--1--
~~ ~ 7~ ::~- ~ ~ =:~~ =
1--
5 f-
I-- -f- - f-f-
-
I-- - - - -- - - 1- -- - - - -1-
'- -~--
1.0 V 1.5 V
-V(Esot --VBEsot
Siemens 781
NPN Silicon High-Voltage Transistors PZTA 42; PZTA 43

• Complementary types: PZT A 92/93 (PNP) E

PZTA 42 PZTA42 Q62702 - Z2035 SOT-223
PZTA43 PZTA43 Q62702 - Z2036 SOT-223
Maximum Ratings
Parameter Symbol PZTA42 PZTA43 Unit
Collector-base voltage Vceo 300 200 V
Emitter-base voltage VEeo 6 6 V
Total power dissipation, TA S 25°C I) PIOI 1.5 W
Junction temperature I Tj 150 °C
Thermal Resistance
Junction - ambient I) s83.3 IKIW
1) Package mounted on an epoxy printed circuit board 40mm x 40mm x 1.Smm
, For detailed dimensions see chapter Package Outlines
782 Siemens
PZT A 42; PZTA 43
Characteristics
at TA =25°C, unless otherwise specified.
Parameter Values Unit
min. Ityp.
DC Characteristics
Ic=l mA,/B=O PZTA42 300 - - V
PZTA 43 200 - - V
Ic = 100 llA, IB = 0 PZTA 42 300 - - V
PZTA 43 200 - - V

IE = 100 llA, Ic = 0 6 - - V
VCB = 160 V PZTA 42 - - 100 nA
VCB =200 V PZTA 43 - - 100 nA
VCB = 160 V, TA = 150°C PZTA 42 - 20 liA
VcB =200 V, TA=150°C PZTA 43 - 20 liA
Emitter-base cutoff current leBo
VEB = 3 V,Ic = 0 - - 100 nA
Ie = 1 mA, Vce = 10 V 25 - - -
Ie = 10 mA, VCE = 10 V 40 - - -
=
Ic = 30 mA, VCE 10 V 40 - - -
Collector-emitter saturation voltage ~ VCEsal
Ic=20 mA, IB=2 mA P TA 42 - - 0.5 V
PZTA 43 - - 0.4 V
8ase-emitter saturation voltage VBE•al
Ic = 20 mA, IB = 2 mA - - 0.9 V
AC Characteristics
Ic =20 mA, VCE = 10 V, f = 100 MHz - 70 - MHz
VCB =20 V, f= 1 MHz PZTA 42 - - 3 pF
PZTA 43 - - 4 pF
1) Pulse test conditions: t ~ 30011S; D = 2%
Siemens 783
PZTA 42; PZTA 43
Total powar dissipation P,o' = ((TA) ,Transition frequency fT file) =

MHz VeE = 10 V, f = 100 MHz
2.0 r- - r- -,---.-r- - ~-'-r-r--.--,....., 103 1_
W f- - - -1-- - - -.. - -- -- - -I-
- I- -1-1-1- -f-I- I-
~Ol 1--- I-
" 5
t
1.5
I-+-l-H-I-I- 1-1-- -1---1-1-+-1
h -. _ .. 1-- - H-t-+-\-+-H
H\ H -I- - - -+-+--+-++..-1
---f\ --
I r-- -
f-- --
r--
- -- - -
f- -
H-+-~-\--tsl- -I--+--+-I--~-HH
H-+--+-JI-I--_-.j~~-_-..j---+---!--+-'-_I--
1--1-1-
1.0 1011=:l:::t:~tl:UI\::=t::I::j:~HI\l:I_=t:I::j_:\tjffi
1-1--1-1-1--1- --1\ --1-- --I- '- -
I- -
I----~-
-;.
I- -I-- -.. -f\ --H·-H-l...J
1-[\ 5 1-+-+Hjlllr-++-H·IHIJ-lc...I-J4-IH~
1-+--1---\-1-1- l- -+-I\ I-
0.5 1--1-1-
I- - -I- -'1.1\-+-1-+..-1
1---- 1/
... --- --t\,f-
-\ t- tf -- 1---1-- f--. -
--- - - - - - -- f-[\
o 10' L_LL..llJlWl_.1....l.JUllllL-L..LLillllJ
o 50 100 O( 150 10° 5 10' 5 10 1 5 10) rnA
--T,. -Ie
DC current gain h FE = f II cl
VeE = 10V
PZTA41.4l
10)
l- I- ::::E'
hF£
5
1
I
10 1 I- .-
1-
I-- f\~
5 I--
f- --- --
10' '-
f-
10-' 5 100
j 5 10' 5 10 1 mAlO)
-Ie
784 Siemens
PZTA 42; PZTA 43
Collector current Ie = f (Vee)

mA Vee = 10V
10 J
5
V
5
10'
5
10- ,
o 0,5 1,5 V
Siemens 785
PNP Silicon Darlington Transistors PZTA 63; PZTA 64

• Complementary types: PZTA 13/14 (NPN) E

PZTA 63 PZTA 63 Q62702 - Z2031 SOT-223
PZTA 64 PZTA 64 Q62702 - Z2032 SOT-223
Maximum Ratings
Parameter Symbol PZTA63 PZTA64 Unit
Collector-emitter voltage VCES 30 30 V
Collector current 'c 500 mA
Peak collector current 'CM 800 mA
Total power dissipation, TA:s 25 ° C 1) Ptot 1.5 W
Storage temperature range TSIg -65 to + 150 °C
Thermal Resistance
Junction - ambient I) I RIhJA :583.3 IKIW
., For detailed dimensions see chapter Package Outlines
786 Siemens
PZT A 63; PZT A 64
Characteristics
Parameter Unit
DC Characteristics
Collector-emitter ~reakdown voltage V(BR)CES
Ic = 100 llA 30 - - V
Ic = 100 llA, IB = 0 30 - - V
IE = 10 llA, Ic = 0 10 - - V
VcE =30 V,/E=O
VcE =30 V, IE =O,TA = 150°C
- - 100
10
nA
11A
VEB = 10 V,/c = 0 - - 100 nA
DC current gain hFE
Ic = 10 mA, VCE = 5 V PZTA63 5000 - - -
PZTA64 10000 -- - -
Ic = 100 mA,VCE = 5 V PZTA63 10000 - -
PZTA64 20000 - - -
Collector-emitter saturation voltage VCEsa!
Ic = 100 rnA, IB = 0.1 rnA - - 1.5 V
Base-emitter saturation voltage VBE ",,!
Ic = 100 rnA, 's = 0.1 rnA - - 2.0 V
AC CharacterIstics
Ic =50 rnA, VCE =5 V, f= 100 MHz MHz
1) Pulse test conditions t ~ 300118, D = 2 %
Siemens 787
PZTA 63; PZTA 64
Total power dissipation P 'o, = '(TAl Transition frequency 'r = '(Ie)

Vce=5V
2.0 ro-r-r-r--.-r-r-,.,r-r"",-,
W H-I--HI-I-+-H-I-+-II-+-t-H
P.o' t, 5 I--J.-I--HIIHI--H-Hlflllf--+-I+H-HII
f 1.5 H-hJ.-+-H-+-I-+-H-H·--H
I
1\
1.0 H--H'-l--H-I\."II-1H-++--+-1--H
S 1-.f-+-H+IIlI--+-f-HHlII---l
1\
0.5 H-+-+-+-I-+++-+-II\..ll-l--l-lI-
I-I--I-IH--I- - '~-H-
-f-- -.- -+--11-1-+'\.1-1--1
1- ._- - .- - --I-~-+-I-+'~-I - --
O~L~LL_~J~_~LL~~LL~i\~ 10' L-..L.L.LJ.J.lliL-'-~J.J.UJI'--.L.I.~JJ1I
o SO 100 O( 150 10° ') 10 1. ') 10 1 ') 10 1 mA
- TA -'-'-/(
Collector cutoff current ICBO = I(TA) DC current gain hFE = {(Ie)

nA VCE =30 V VcE =5V
10' 10'
r= F=
s 5
1= 'r-=
f--
~
r '~
'-,,,-or
l-
I-
l.- max.
5
-55°C.
t-
-- t- ..
10' ~
IItyp. l-
t-
5 1-H1tHt-
l-
5 e- l-
~ !-
e- l-
100 10I
o so 100 ISO °c 10-' 5 10° S 10' 5 101 5 101 mA
-71 -Ie
788 Siemens
PZTA 63; PZTA 64
Collector-emitter saturation voltage Base-emitter saturation voltage Ie = ((VeE sa')

Ie = ((VeE sal) hFE = 1000
hFE = 100
10'
5 ~~tf~~ I~:.~~~:f-t~_+-_-!=f-+~- -j
,- -.- - -1- --- I-c---
10 0 '-'-...L..LJJ--'----L-LlL_-'-.-'--ILL_L
o 0.0; 1.0 V 1.5 V
- - - VUsot - - - VBEsot
Siemens 789
PNP Silicon High-Voltage Transistors PZT A 92; PZTA 93

• Complementary types: PZTA 42/43 (NPN) E

PZTA 92 PZTA 92 Q62702 - Z2037 SOT-223
PZTA 93 PZTA 93 Q62702 - Z2038 SOT-223
Maximum Ratings
Parameter Symbol PZTA 92 PZTA 93 Unit
Emitter-base voltage. VEBO 5 5 V
Total power dissipation, fA:S 25°C I) PIOI 1.5 W
Thermal Resistance
Junction - ambient 1) :S 83.3 IKIW
·l For detailed dimensions see chapter Package Outlines
790 Siemens
PZTA 92; PZTA 93
Characteristics
Parameter Uhlt
typo Imax.
DC Characteristics
Ic = 1 mA, IB = 0 PZT A 92 300 - - V
PZTA 93 200 - - V
Ic = 100 pA, IB = 0 PZTA 92 300 - - V
PZTA 93 200 - - V

IE = 100 \lA, Ic = 0 5 - - V
Vce=160V PZTA 92 - - 250 nA
Vce =200 V PZTA 93 - - 250 nA
VCB = 160 V, TA =150'C PZTA 92 - 20 pA
Vce =200 V, TA = 150°C PZTA 93 - 20 pA
Emitter-base cutoff current leeo
VEe = 3 V,/c = 0 - - 100 nA
Ic=1 rnA, VcE =10V 25 - - -
Ic =10mA, VcE =10V 40 - - -
Ic = 30 rnA, VCE = 10 V 25 - - -
Ic = 20 rnA, IB = 2 rnA PZTA 92 - - 0.5 V
PZTA 93 0.4 V
Base-emitter saturation voltage 1) VBESA1
Ic = 20 mA, Ie = 2 mA - - 0.9 V
AC Characteristics
'c =20mA, VcE =10V,f=100MHz - 100 - MHz
Collector-base capacitance COb

VCB = 20 V, f= 1 MHz PZTA 92 - - 6 pF
PZTA 93 - - 8 pF
1) Pulse test conditions: t ~ 300ps; D = 2%
Siemens 791
PZTA 92; PZTA 93
Total power dissipation P.o. = , (TAl Transition frequency fT = , (Ie)

MHz VeE = 10 V, f = 100 MHz
2.0 r-T-,-..,--',,-,--r-,,-,.-,-,,-,-, 10}
VI -1-1- --
1-+-1-·+-+-1-1- -1- ·-+--1I-+-I--·H
f-I- - l-
f-. 1-- +-
h-r'1-r-l-l-1-11--1-1--1-I
-1\ _. f- f- -I-H--+-I-1
- f- -I---!-I-+-I
f- --f- 1\
1.0 I- 1-- - ~ ~.+'++++-+-+--1
1-1-1- - .I\-f-I-f--
H-++-+-I~j-I\f-I---!-+++~
5
1\
-I- 1\
0.5 -+-'1.1\..-1-+-+-1
1--1-1------1- '-1\ -·
1
o L.l.-L-'-L.I.-L. .L..L...L_L-'-L.J.-L." -----

o so 100 ·C 150 5 10' 5 101mA
-TA
DC curren! gain hFE = f(/el

VeE = lOV
10)
f- l- .
l-
I-
I-
10'
5 ~
-- -
- I- -
100 - .- -
10-' 5 YJo 5 10' 5 YJI S 10} A
-Ie
792 Siemens
PZTA 92; PZTA 93
Collector cutoff current ICBO = 'ITA) Collector current Ie = f I VBE)

VeB 160 V = PZlA92 PITA93
rnA VCE = 10V
10 4 _. 103
nA f..-:. S
~t
1-1- - I- -, .
i=-
feeo mcx i?-
1-1- - l - - 1- II
10 3 - -
~t= F~F
C; I- -1= ---- - 1=
f 1-1- =1- - 1-- s
f..-:b ~'- V
I.....
10 2 _. _. -
C;
1= :
--
FF-
.l/- I==F-
E .. I- 10'
typ f..-:
5
10' -
~ -t.=;: .
C; I-
10° 5
<; 1= .J-?I~ 1=
I-
f..-:f..-:
10·' 1/ 111I
o 50 °C 100 150 o o,s 1,0 1,5 V
- TA -\f,[
Siemens 793
NPN Silicon Switching Transistors 5MBT 2222
5MBT 2222 A

• Complementary types: 8MST 2907, 8MST 2907 A (PNP)

8MST 2222 81S Q68000-A4335 Q68000-A6481 80T23
8MST 2222 A 81 P Q68000-A4334 Q68000-A6473 SOT 23
Maximum ratings
Parameter Symbol 5MBT2222 5MBT 2222 A Unit
TA = 25°C
Thermal resistance RthJA :;:: 375 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm xO.7 mm
794 Siemens
5MBT2222
5MBT2222 A

Ic = 10 rnA 5MBT 2222 30 - - V
5MBT 2222 A 40 - - V
Ic = 10 ~ 5MBT2222 60 - - V
5MBT2222 A 75 - - V
IE = 10 ~ 5MBT2222 5 - - V
5MBT 2222 A 6 - - V
VCB = 50V 5MBT2222 - - 10 nA
VCB = 60V 5MBT2222 A - - 10 nA
VCB=50V, TA=150°C 5MBT2222 - - 10 IlA
VCB = 60 V, TA = 150°C 5MBT 2222 A - - 10 IlA
VEB = 3V
DC current gain hFE
Ic = 100~, VCE = 10 V 35 - - -
Ic= 1 rnA, VCE = 10V 50 - - -
Ic= 10 rnA, VCE = 10 V') 75 - - -
Ic = 150 rnA, VCE = 1 V') 50 - - -
Ic = 150 rnA, VCE = 10 V') 100. - 300 -
Ic = 500 rnA, VCE = 10 V') 5MBT2222 30 - - -
5MBT 2222 A 40 - - -
Ic= 10 rnA, VCE = 10 V,
TA = 55°C 5MBT 2222 A 35 - - -
Ic = 150 rnA, IB = 15 mA 5MBT 2222 - - 0,4 V
5MBT 2222 A - - 0,3 V
Ic = 500 rnA, IB = 50 mA 5MBT 2222 - - 1,6 V
5MBT 2222 A - - 1,0 V
Ic = 150 mA, IB = 15 rnA 5MBT 2222 - - 1,3 V
5MBT 2222 A 0,6 - 1,2 V
Ie = 500 mA, I B = 50 rnA 5MBT 2222 - - 2,6 V
SMST 2222 A - - 2,0 V
') Pulse test: ts. 300 Ils, D = 20/0.
Siemens 795
5MBT 2222
5MBT 2222 A

Transition fr.equency fT
Ic = 20 mA, VCE = 20 V, f= 100 MHz
5MBT2222 250 - - MHz
5MBT2222 A 300 - - MHz
Output capacitance Cob - - 8 pF
VCB = 10V, f=1 MHz
Input capacitance Cib
VEB = 0,5 V, f= 1 MHz
5MBT 2222 - - 30 pF
5MBT2222 A - - 25 pF
Short-circuit input impedance hl1e
Ic = 1 mA, VCE = 10V, f=1 kHz
5MBT 2222 A 2 - 8 kQ
Ic = 10 mA, VCE = 10V, f= 1 kHz
5MBT 2222 A 0,25 - 1,25 kQ
Ic = 1 mA, VCE = 10 V, f= 1 kHz
5MBT2222 A - - 8,0 10--
Ic = 10 mA, VCE = 10V, f= 1 kHz
5MBT 2222 A - - 4,0 10--
I c = 1 mA, VCE = 10 V, f = 1 kHz
5MBT 2222 A 50 - 300 -
Ic = 10 mA, VCE = 10V, f= 1 kHz
5MBT 2222 A 75 - 375 -
Ic = 1 mA, VCE = 10 V, f= 1 kHz
5MBT2222 5 - 35 flS
Ic = 10 mA, VCE = 10 \L, f= 1 kHz
5MBT2222 A 25 - 200 flS
Collector-base time constant (b'CC - - 150 ps
IE = 20 mA, VCB = 10 V, f= 31,8 MHz
5MBT2222 A
Noise figure F - - 4,0 dB
Ic = 100 flA, VCE = 10V, Rs = 1 kQ
f=1 kHz
5MBT 2222 A
796 Siemens
5MBT2222
5MBT2222A

Vcc = 30 V, Ic = 150 mA, IB1 = 15 mA
VBE(off) = 0,5 V
Vcc = 30 V, Ic = 150 mA,
IB1 = IB2 = 15 mA
Test circuits
30V 30V
~100~s
200Q
<5ns
Osz.
16,2V
99V 619Q lk
o
O~nO,5V -13,6 V
~500~s -3V
Oscilloscope: R > 100 kQ

C < 12 pF
tr < 5 ns
Siemens 797
5MBT2222
5MBT 2222 A
Total power dissipation Ptot = f (TA) Collactor-base capacitance

Cob = f(Vce)
f= 1 MHz
mW pF
400 102
"lot 5
r-b
t 300
i
I\,
-I"-
200
\
\.
5 r-...
100
1\
o \
o 50 100 150°C
-~
Pulse handling capability 'th = fIt) Transition frequency fT = f (1 0 )

K
W
10°
10-
5
, II "~,5
0,2
0,1
0,05
0,02
2
I
v ...
'\
0,01 II
0,005
10- 2 0=0 1111 5
~
tp
D=r T
10-3 '" '"
10-6 10-5 10- 4 10- 3 10- 2 10-' 10° 10' s 5 10'
-t
798 Siemens
5MBT 2222
5MBT 2222 A
Saturation voltage Ie = f(VBEsat, VCEsatl DC current gain h FE = f (Ie)

hFE = 10 VCE = 10V
rnA
103
5
IL
VVeE / VBE
l?E:£
r-
I
II
2~.lcl 1\
10'
5 -55°C
5
vi
5
10-' '-:-
o 0.2 0.4 0,6 0.8 1.0 1.2 V
- VeE sat- VeE sat
Delay time t d = If (I e) Storage time tst9 = f(Ie)

Risetime tr= f(Iel Fall time tf = f (l e)
--
~
'" s,
\ \ ...,hFE -l0
5 hFE -20
i\ tl
r
hFEI- 1
I'"
r'-.... ).
I
5 5
-Ie
Siemens 799
PNP Silicon Switching Transistors 5MBT2907
5MBT 2907 A

• Complementary types: 5MBT 2222, 5MBT 2222 A (NPN)
Type . Marking Ordering code Ordering code for Package

5MBT 2907 S2B Q68000-A4336 Q68000-A6501 SOT 23
5MBT 2907 A S2F Q68000-A4337 Q68000-A6474 SOT 23
Maximum ratings
Parameter Symbol 5MBT 2907 5MBT2907 A Unit
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
800 Siemens
5MBT2907
5MBT2907 A

Ic = 10 rnA 5MBT2907 40 - - V
5MBT2907 A 60 - - V
Ic=10~A 5MBT2907 60 - - V
5MBT2907 A 60 - - V
Ie = 10 ~A
VCB = 50V 5MBT2907 - - 20 nA
VCB = 50V 5MBT 2907 A - - 10 nA
VCB = 50 V, TA = 150°C 5MBT 2907 - - 20 ~A
VCB = 50 V, TA = 150°C 5MBT2907 A - - 10 ~A
Emitter .::utoff current leBO - - 10 nA
VEB = 3V
DC current gain hFE
Ic=100~A, VCE=10V 5MBT2907 35 - - -
5MBT2907 A 75 - - -
Ic= 1 rnA, VCE = 10V 5MBT2907 50 - - -
5MBT2907 A 100 - - -
Ic= 10 rnA, VCE = 10 V') 5MBT2907 75 - - -
5MBT2907 A 100 - - -
Ic = 150 rnA, VCE = 10 V') 5MBT 2907 100 - 300 -
5MBT2907 A 100 - 300 -
Ic = 500 rnA, VCE = 10 V') 5MBT2907 30 - - -
5MBT2907 A 50 - - -
Ic = 150 rnA, IB = 15 rnA - - 0,4 V
Ic = 500 rnA, IB = 50 rnA - - 1,6 V
Base-emitter saturation voltage ') VB Esat
Ic= 150 rnA, IB= 15mA - - 1,3 V
Ic = 500 rnA, IB = 50 rnA - - 2,6 V
1) Pulse test: t:5 300 ~s, D = 20/0.
Siemens 801
5MBT 2907
5MBT2907 A

Ic = 20 mA, VCE = 20 V, f= 100 MHz
Vcs = 10V, f=1 MHz
Input capacitance Cib - - 30 pF
VES = 0,5 V, f= 1 MHz
Vcc = 30 V, Ie = 150 mA, IS1 = 15 mA
Vcc = 6 V, Ie = 150 mA,
IS1 = IS2 = 15 mA
Storage time t519 - - 80 ns
Fall time tl - - 30 ns
Test circuits
-30V -6V
200n .1SV 37n

Eingang Osz. Eingang Osz.
zo=son Zo =50 n
tr < 2ns 1k t, < 2ns 1k
-~0-[ o--rlso=n=:J-+I -~0-{ son
200ns 200ns
802 Siemens
5MBT2907
5MBT2907 A
Total power dissipation P tot = f (TA) Collector-base capacltanca

Ccb = f(Vcs)
f= 1 MHz
mW pF
400 102
~.t 5
'-~~
t 300
\. 1- ..
200 ~
I\.
5
100
\.
""
I\,
o
o 50 100 150 ·C 5 1~
-~
Pulse handling capability 'th = f(t) Transition frequency fT = f (Ic)

(standardized) Vce=20V
K
iii
100
lih
f
5
10·
, ut
l1li '0,5
0,2 2
vi---
'\
0,1
5 0,05
0,02 II
0,01 17
0,005
0:0 1111
5
10·2
D=~
T 1tn..
~T7.!
2
10" 3 10
I
0
10.6 10. 5 10. 4 10.3 10. 2 10·' 10° 10' s 10 5 10' 5 10 3 mA
-t
Siemens 803
5MBT2907
5MBT2907 A
Saturation voltage Ie = f ( VeE sat, V CE sat) Delay time td = f(Ie)

hFE = 10 Rise time tr = f(Ie)
hFE = 10
ns
'II 103
5 TIlT
f- H VBE ;;ov,Vcc -lovl
VI[ I-- - - - VBE -20V,Vcc -30V
~ VCE ~ II
f-
I~
rl
If ~.
" I-- td
5
1\
5
\1\
1\
"5 \
'I r"
1f'
o 01 0.4 0.6 0.& 1.0 1.2 1/+ 1.6 V
- VaEsaI' VCEIGt -Ic
Storage time tstg = f(Ie) Fall time tl = f (I cl
ns
103
tstg 5 ..
i
Vcc -30V
~fFE=20
"
hFE. =1 ~ \
5 f- FE- 1
lY' ~
1]/ "
fhFE= 20
'-
5 10'
-Ic -Ic
804 Siemens
5MBT 2907
5MBT2907 A
DC current gain h FE = f (I c)
175°C
, ]J
25 ·C
t'\
-55 ·C
--Ie
Siemens 805
NPN Silicon Switching Transistor 5MBT3904

• Complementary type: 5MBT 3906 (PNP)

5MBT3904 S1A Q68000-A4340 Q68000-A4416 SOT 23
Maximum ratings
Total power dissipation PIOI 330 mW
TA"= 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
806 Siemens
5MBT3904

Ic = 1 mA
Ie = 10 !lA
h= 1O !lA
VCB = 30V
DC current gain hFE
Ic = 100 !lA, VCE = 1V 40 - - -
Ic = 1 mA, VCE = 1V 70 - - -
Ic = 10 mA, VCE = 1 V') 100 - 300 -
Ic = 50 mA, VCE = 1 V') 60 - - -
Ic = 100 mA, VCE = 1 V') 30 - - -
I C = 10 mA, Ie = 1 mA - - 0,2 V
I C = 50 mA, Ie = 5 mA - - 0,3 V
Base-emitter saturation voltage') VeEsat
I C = 10 mA, I B = 1 mA 0,65 - 0,85 V
I C = 50 mA, I B = 5 mA - - 0,95 V
') Pulse test: t::;:; 300 !ls, D = 20/0.
Siemens 807
5MBT3904

Ic = 10 rnA, VCE = 20 V, f= 100 MHz
Output capacitance Gob - - 4 pF
VCB=5V,f=1 MHz
Input capacitance Gib - - 8 pF
VEB = 0,5 V, f= 1 MHz
Input impedance h11e 1 - 10 kQ
Ic = 1 rnA, VCE = 10V, f= 1 kHz
Open-circuit reverse voltage transfer ratio h12e 0,5 - 8 10- 4
Ic = 1 rnA, VCE = 10V, f=1 kHz
Short-circuit forward current transfer ratio h21e 100 - 400 -
Open-circuit output admittance h22e 1 - 40 /lS
Noise figure F - - 5 dB
Ic = 100 /lA, VCE = 5 V, Rs = 1 kQ
f= 1 kHz
Vcc = 3V, Ic = 10mA, IB1 = 1 rnA
VBE (off) = 0,5 V
Vcc=3V,Ic=10mA,
IB1 = IB2 = 1 rnA
Test circuits
:g
+3.0V
OOns 0=2% 275!l
-+10.9 V
10 k!l I
o cr-C::J-H J£
-0.5V
T<4.0pF lI
I
<1.0ns -~
< tOns
808 Siemens
5MBT3904
Total power dissipation P'o' = f (TA) Saturation voltage Ie = f (VeE sa', VeE sa')
rnW
400
rnA V
~ot
// /
r 300
""
I I
1\ I
200
1'\
VeE
I VBE
5
100
\
o '\ 10 0 I
o 50 100 150·( o 0,2 0,4 0,6 0,8 1,0 V 1,2
--~ --VSfsat I VCEsat
Input impedance Open-circuit reverse voltage

hll. = f(Ie) transfer ratio h = f (I e) ,2.
VeE = 10V, f= 1 kHz VeE = 10V, f= 1 kHz
10 2 10'
kfl
h". 5 "\.
5
1", "
\.
r'-.. r'\
5
......... ....- V"'"
" i"'.,
5
,
-Ie
Siemens 809
5MBT3904
Short-circuit forward current Open-circuit output admittance h22e = f (I e)

transfer ratio h21e = f(Iel VCE = 10V, f= 1 MHz
VCE = 10V, f= 1 MHz
10 3
5
-- f-
5
/
V
/'
-Ie
Delay time td = f(Ie) Storage time tstg = f(Ie)

Rise time tr = f(Ie)
3
C:::=!=!=fffi:m=~ffi~R
10 f.-
ns
5
~f=
~~
- - td-=f= =
hFE= 10
- - I ; --t--t--m"tttt---1 5
-
-.
-.
2S 0 (
125°(
hFE = 20 I--
I'\'[\ v 10
::= F"' ---== :""..:f::
5 hFE=2
1 ~~
5 102 rnA
-Ie
810 Siemens
5MBT 3904
Fall time If = f (l c) Rise time I, = f(Ie)
no
t=:: =. 25°( ns
1---
~
--125°( = I'ce= 40V = t, 5
"- \ICe =40V ~
I--
.~
" " '\ ~

hFE =10
~
~ 1250( ~ 25°(
hFE= 20 r=
~
5 I'\.~ ~
5
~ ,I" '"'\.
hFE=10
~ f--
~ ;1
~
I--
5 102 mA 5 102 mA
-Ie -Ie
DC current gain h FE = f (l c)
VeE = 10 V
lJfflC
25°C ~
_55°(
5 v
1/ ~
10- 1
10-1 5 10 0
111111
5 101 rnA 10 2
III~
_Ie
Siemens 811
PNP Silicon Switching Transistor 5MBT3906

• Complementary type: 5MBT 3904 (NPN)

5MBT3906 S2A Q68000-A4341 Q68000-A4417 SOT 23
Maximum ratings
TA = 25 DC

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
812 Siemens
5MBT 3906

Ic = 1 rnA
Ic=10[.lA
lE=10[.lA
VCB = 30V
DC current gain hFE

I C = 100 [.lA, VCE = 1V 60 - - -
Ic = 1 mA, VCE = 1V 80 - - -
Ic = 10 rnA, VCE = 1 V') 100 - 300 -
Ic = 50 mA, VCE = 1 V') 60 - - -
Ic = 100 mA, VCE = 1 V') 30 - - -
Ic=10mA,IB=1mA - - 0,25 V
I C = 50 mA, I B = 5 mA - - 0,4 V
Ic=10mA,IB=1mA 0,65 - 0,85 V
I C = 50 mA, I B = 5 mA - - 0,95 V
') Pulse test: t:5 300 I1s, D = 20/0.
Siemens 813
5MBT3906

Ic = 10 rnA, VCE = 20 V, f= 100 MHz
Output capacitance Gob - - 4,5 pF
VCB = 5V, f=1 MHz
Input capacitance Gib - - 10 pF
VEB = 0,5 V, f= 1 MHz
Short-circuit input impedance h11e 2 - 12 kO
I c = 1 rnA, V CE = 10 V, f = 1 kHz
Open-circuit reverse voltage transfer ratio h12e 0,1 - 10 10-'
Short-circuit forward current transfer ratio h21e 100 - 400 -
Ic = 1 rnA, VCE= 10V, f=1 kHz
Open-circuit output admittance h22e 3 - 60 !lS
Noise figure F - - 4 dB
Ic = 100 !lA, VCE = 5 V, Rs = 1 kO
f=1 kHz
Vcc = 3 V, Ic = 10 rnA, IB1 = 1 rnA
VBE (off) = 0,5 Vdc
Vcc = 3 V, Ic = 10 rnA,
IB1 = IB2 = 1 rnA
Storage time fstg - - 225 ns
Test circuits
<1.0ns
-lOV
275Q 275Q
<1.0ns
~_~::()ov-[10=k:JQ-+-[ ~----hf----O O---£::::J--_+-r
-1d=O:2%
814 Siemens
5MBT 3906
Total power dissipation Ptot = (( TA) Saturation voltage I c = (( VSEsat, VCEsat)
mW
~ot
400
//
,/"
:;
-
i 300 5
II
I\,
200
Y(E {VBE
I\,
5 L
100
I\,
o \.
o 50 100 150 0 ( 0,2 0,4 0,6 0,8 V 1,0
--T;, - VSEsat IVCEsat
Short-circuit input impedance h11. = ((le) Open-circuit reverse voltage

VCE = 10V, (= 1 kHz transfer ratio h '2.
= ((l c)
102
kQ
hI,. 5 -"
",
""
5
'\.. 1- ....
'\
'\
5
" 5
-Ie -Ie
Siemens 815
5MBT3906
Short-circuit forward current Open-circuit output admittance h22e = f (I e)

transfer ratio h 21 e = f (I el VCE"; 10V, f= 1 MHz
VCE = 10V, f= 1 MHz
103
h 22e
5
/
/
/
- /
5 5
-Ie -Ie
Delay time td = f(le) Fall time tf = f(le)

Rise time tr = f(lel
ns
3
~~~~~~~ijml~
= ,-- -
10 -
td _ _" _ 25°(
td.tr 5 ~-- tr --hFE=10 - 5 ~ --125°( - Vee=40V -
r ~\~~~ttm~~ttm~ "\ , \.
10 2 \ ,~ ~AhFE=20 -
5 5
,.. ~
-"
h FE =10
" ~ .....
t:::
5 ~~~~llL-J-L~WW~
10° 5 10' 5 10 2 mA
-Ie
816 Siemens
5MBT3906
DC current gain hFE = f(lel
Siemens 817
NPN Silicon Switching Transistor 5MBT 4124
• High current gain: 0.1 to 100 mA


5MBT 4124 SCZ upon request upon request SOT 23
Maximum ratings

TA = 25°C
Thermal resistance
Junction-ambient RthJA :5 375 K/W
Package mounted on
,
alumina "
15 mm x 16.7 mm x 0.7 mm
818 Siemens
5MBT 4124
DC characteristics min typ max Unit

Collector-emitter breakdown voltage V(BRICEO 25 - - V
Ie = 1 mA
Collector-base breakdown voltage V(BRICBO 30 - - V
Ie = 10 fJA
Emitter-base breakdown voltage V(BRIEBO 5 - - V
IE = 10 fJA
Collector cutoff current IeBO - - 50 nA

V CB = 20 V, IE = 0

VEe = 3 V. Ie = 0
DC current gain hFE
Ie = 2 mA, VCE = 1 V 120 - 360 -
Ie = 50 mA, VCE = 1 V 60 - -
Collector-emitter saturation voltage 1) VCEsat - - 0.3 V
Ie = 50 mA; I B = 5 mA
Base-emitter saturation voltage 1) VBEsat - - 0.95 V
Ie = 50 mA; I B = 5 rnA

Transition frequency fr 300 - - MHz
Ic = 10 mA, VCE = 20 V, f= 100 MHz
Output capacitance Cobo - - 4 pF
V CB = 5 V, f = 1 MHz

V EB = 0.5 V, f = 1 MHz
Small-signal current gain hIe 120 - 480 -

Ie = 1 rnA;V CE = 5 V, f = 1 kHz
Ie = 0.1 rnA, VCE = 5 V, f= 10 Hz to 15 kHz
Rs = 1 kG
1) Pulse test: t:S 300 IJs, D :S 2 %
Siemens 819
5MBT 4124
Total power dissipation Plot = f( TA ) Saturation voltage Ie = f(V."", Ve",,)

mW
400
~ot
// II
i 300
r-I"\.
I II
I
\. I
I
I
200 \t(E VeE

I
\
1,\
r\
5
100
1,\ I
---
1\
o ~ 100 I
o 50 100 150 DC o 0,2 0,4 0,6 0,6 1,0 V 1,2
-~ --VBEsat , VCEsat
Small-signal current gain hr. = f(Id DC current gain hFE = f(Id

VeE = 10 V, f = 1 MHz VeE = 10 V (standardized)
f.-- - ~ 1'\
125°(
-55°(
5 5 V !
V \\
5 10' mA
~
10 2
-Ie
820 Siemens
PNP Silicon Switching Transistor 5MBT 4126
• High current gain: 0.1 to 100 rnA


5MBT 4126 SC3 upon request upon request SOT 23
Maximum ratings

Emitter-base voltage V EBO 4 V
Total power dissipation P'o' 330 mW
TA = 25°C
Storage temperature range Ts,g -65 ... +150 °C
Thermal resistance
Junction-ambient R'hJA :::; 375 K/W
Package mounted on
alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 821
5MBT 4126

Ie = 1 mA
I c =10iJA
IE= 10 iJA
Collector cutoff current I cBo - - 50 nA
VCB = 20 V, h = 0
VEB = 3 V, Ie = 0
DC current gain hFE
Ie =2 mA, VCE = 1 V 120 360 -
Ie =50 mA, VCE = 1 V 60 -
Collector-emitter saturation voltage 1 ) VCEsat - - 0.4 V
Ic = 50 mA; IB = 5 mA
Ie =50 mA; IB = 5 mA

Ie = 10 mA, VCE = 20 V, f= 100 MHz
Output capacitance Cobo - - 4.5 pF
VCB = 5 V, f = 1 MHz
Input capacitance Cibo - - 10 pF
VEB = 0.5 V, f= 1 MHz
Small-signal current gain hIe 120 - 480 -
Ie = 1 mA; VCE = 5 V, f = 1 kHz
Ic=0.1 mA, VcE =5 V. f=10 Hz to 15 kHz
Rs = 1 kQ
1) Pulse test: t';; 300 I-is, D';; 2 %
822 Siemens
5MBT 4126
Total power dissipation PIo ' = f(TA ) Saturation voltage Ie = f( VBE ,,,. VeE ",)
mW
400 2
~ot /
vV V
I-f- '"
t 300 I
I
I
\.
200
VcE IV SE
\.
5
100
I\,
o '\
o 50 100 0,2 0,4 0,6 0,8 V 1,0
--~ - ~Es.t ,vCE ..,
Small-signal currant gain h,. = f(le! DC current gain hFE = f(le!

VeE = 10 V, f = 1 MHz (standardized), VeE = 1 V
SH-H-t-tWIt-t-HI+tt1-tt-+-t-t+ffi1tt----1
-
5
10-1
10-1
L--L..Lu.wW--'-l..LW-LW--L-L.LL'-"'-'-~-,,"
5 100 5 101 rnA 102
-Ie -Ie
Siemens 823
PNP Silicon Transistors 5MBT 5086
5MBT 5087


versions in bulk versions on a-mm tape
5MBT 5086 S2P upon request upon request SOT 23
5MBT 5087 S20 upon request upon request SOT 23
Maximum ratings

TA = 25°C

Thermal resistance
Junction-ambient R thJA :5 375 K/W
Package mounted on
alumina
15 mm x 16.7 mm x 0.7 mm
824 Siemens
5MBT 5086
5MBT 5087

Collector-emitter breakdown voltage VIBRICEO 50 - - V
Ie = 1 mA
Collector-base breakdown voltage VIBRICBO
50 - - V
Ic = 100 IlA
Emitter-base breakdown voltage VIBRIEBO 3 - - V
IE = 10 IlA
Collector cutoff current I CBO
VCB = 10 V, h = 0 - - 10 nA
VCB = 35 V, h = 0 - - 50 nA
VCB = 35 V, h = 0, TA = 150 DC - - 20 IlA
DC current gain hFE
Ie = 1 00 1lA, VCE = 5 V 5MBT 5086 150 - 500 -
5MBT 5087 250 - 800 -
Ic = 1 mA, VCE = 5 V 5MBT 5086 150 - - -
5MBT 5087 250 - - -
Ie = 10 mA, VCE = 5 V 5MBT 5086 150 - - -
5MBT 5087 250 - - -
Collector-emitter saturation voltage 1) VCEsat - - 0.3 V
I C = 10 mA; I B = 1 mA
Base-emitter saturation voltage.) VBEsat - - 0.85 V
Ie= 10 mA; IB = 1 mA

Ie = 0.5 mA, VCE = 5 V, f= 100 MHz
Small-signal current gain hfe
Ic = 1 mA; VCE = 5 V, f= 1 kHz 5MBT 5086 150 - 600 -
I C = 1 mA; VCE = 5 V, f = 1 kHz 5MBT 5087 250 - 900 -
Noise figure NF
Ie = 100 IlA, VCE = 5 V, f= 1 kHz,
Rs = 3 kO 5MBT 5086 - - 3 dB
5MBl' 5087 - - 2 dB
Ic = 2 mA, VCE = 5 V, f = 10 Hz to 15 kHz,
Rs = 10 kO 5MBT 5086 - - 3 dB
5MBT 5087 - - 2 dB
1) Pulse test: t $;300 j.Js, D $;2 %
Siemens 825
5MBT 5086
5MBT 5087
Total power dissipation P'o' = f(TA ) Collector-base capacitance CeBo = f(VeBo)

Emitter-base capacitance CEBO = f( VEBO)
mW pF
400 12
~.t I\.
i 300
~~
I\.
,
~
~ 8
'"
I\. I/CCBO
~
200 6
i'
I\.
4
~
./ f"".r-,
C EBO
100
1\
2
I\.
o
o 50 100 150·(
-~
Pulse handling capability r'h = fIt) Transition frequency fT = f(Id

K (standardized) VeE = 5 V
W MHz
10° 103
5 -u.o fr
r 1
j...~
!:;;
~
ITll
1'-0.5
0.2
I
t
2
5
l-
5
III 0.1
0.05
0.02
0.01
V
t,..
0.005
1'-0=0
2 5
O=.l. t~
T T
3 1
10"" 10 10-1
10-6 10-5 10-4 10-3 10-2 10- 1 10° S 5 10'
-t -Ie
826 Siemens
5MBT 5086
5MBT 5087
Base-emitter saturation voltage Ie ; f( VB' ",) Collector-emitter saturation voltage

hFE = 40 Ie = t(Ve, ",)
hFE = 40
rnA
10 2
Ie 5 Ie 5
100 0( 1/ I I // -SOO(
r 2so~8
_50°(1 II 1/ t 25°(
If, V V l00 0(
5 5
'"
5 5
10-1 11)"1
o 0,2 0,4 0,6 0,8 1,0 1,2 V o 0,1 0,2 0,3 0,4 0,5 V
- VBfsat -VcEsa'
Collector current Ie = f(VB') DC current gain hFE = f(lel

Ve, = 1 V Ve, = 1 V
1QD
l00 0 ( I 25°( _50 0 (
5
,
I
lO- 1
S
I 100 l-L...llLLWL.--'-'--'-lllllL..L.LlJ..WlJL.....L.J.J.J.J.JJlJ
0.5 I,O-V 10-2 5 10-1 5 100 5 101 5 10 2 rnA
-Ie
Siemens 827
5MBT 5086
5MBT 5087
Collector cutoff current IeBO = f( TA ) Noise figure NF = fWe,)

Ie = 0.2 rnA, Rs = 2 kO, f = 1 kHz
dB
20 ~"nTIm-.-~n=-'~T'=
NF
1 15 ~~~~~H+Hm-4-H~
max. V
i7
1/
typo
1.1
, 1.1 OL-LLLUlliL-L~Ull~~~~
50 150 DC 10-' 5 100 5 10' 5 102 V

-VcE
Noise figure NF = f(f) Noise figure NF = f(Iel

Ie= 0.2 rnA. Rs = 2 kO, VeE =5 V VeE = 5V,f= 120Hz
dB dB
20 20 II'
m
IIII i
I'
I Ii! I
,
~ IRs=1Mn 100kn 10kn/
111I
,
!I I~ !
II
10
1\ , 10
i
,
j 5oon
i
l
i'!
I
, il
I
~
I
5 5
·i!l!
IY\ ~ lkQ
11111
11111
n---;; 11111
101 rnA
828 Siemens
5MBT 5086
5MBT 5087
Noise figure NF = f(lel Noise figure NF = f(lel

VeE = 5 V, f = 1 kHz VeE = 5 V, f=10 kHz
dB dB
20 20
I
NF
I Rs=lMIl
Rs =lMIl 100 k if 10k11,
\ I fl00k
IV I II I I
10 1\ 10
I II
II i
lkll , 0011 10kll
17
5
/ II 5
I\,
,
I
1\
'\. 11'50011 lkll\. /
I III 11111 V-
~ III I III III~
o -
10-3
,/
III I III o
10-3
jJ5j.,..
'"
-Ie --Ie
Siemens 829
NPN Silicon Darlington Transistor 5MBT 6427
• For general amplifier applications


5MBT 6427 S1V upon request upon request SOT 23
Maximum ratings

.TA = 25°C

Storage temperature range Tst9 -65 ... +150 °C
Thermal resistance
Junction-ambient RthJA =::; 350 K/W
Package mounted on
alumina
15 mm x 16.7 mm x 0.7 mm
830 Siemens
5MBT 6427

1e=10mA
Collector-base breakdown voltage V(BR)CBO . 40 - - V
Ic = 100 I1A
IE = 10 I1A
Collector cutoff current leBO
VeB = 30 V, h = 0 - - 50 nA
VeB = 30 V, h = 0, TA = 150°C - - 10 I1A
Collector cutoff current ICED - - 1 I1A
VCE = 30 V, IB = 0

V EB = 10 V. Ic = 0
DC current gain hFE

Ie = 10 mA, VeE = 5 V 10000 100000 -
Ic = 100 mA, VeE = 5 V 20000 200000 -
Ie = 500 mA, VeE = 5 V 14000 140000
Ie= 50 mA; IB = 0.5 mA - - 1.2 .V
Ie= 500 mA; IB = 0.5 mA - - 1.5 V
Base-emitter saturation voltage 1) VB Esat - - 2.0 V
Ie= 500 mA; IB = 0.5 mA
Base-emitter voltage VBE(on) - - 1.75 V
I C = 50 mA; VeE = 5 V

Ic = 50 mA, VCE = 5V, f = 100 MHz
VeB = 10 V, f = 1 MHz
V EB =0.5V,f= 1 MHz
Noise figure NF
1e=1 mA, VcE =5 V, Rs=100 kQ - - 10 dB
f = 1 kHz to 15kHz
1) Pulse test: t'; 300 fls. D'; 2 %
Siemens 831
5MBT 6427
Total power dissipation p.o. = f(TA ) COllector-base capacitance CeBo = f(VeBo)

mW pF
400 10
CEBO
~Dt , ICcBo)
1
1 300
200
, 1\
"r\ 5
"'" " .....
..... ~BO
11'-....
. . . . r-
I"EB .......
,
100
I'\.
o
o 50 100 "
150 DC 5 10°
~
5 101 V
VEBO (VCBO )
-~
Pulse handling capability r'h = f(t) Transition frequency fT = f(Iel

.K (standardized) VeE = 5 V
W MHz
10° 10 3
r
5
1
M
II f',1
I' 0,5
0,2
fr
t
5
2
I
0,1 ,
5 0,05 V
0,02 102
0.01
0,005
, D:O 1111
I
10- 2 5
~
2
D:1
T T
10-3 1
'"' 'III III'
10-6 10-5 10-4 10- 3 10- 2 10- 1 10° 101 S 10 10 ° 5 101
-f
832 Siemens
5MBT 6427
Base-emitter saturation voltage Ie = f( VB' ,,,) Collector-emitter saturation voltage

h" = 1000 Ie = f We",,)
h" = 1 000
mA
103
Ie 5
'/
1/11
t I /7
5
I
IL.
125°C
t---2~oC
-55°C 1=
5
100
2 3 V o 0,2 0,4 0,6 0,8 1,0 1,2 V
VeE sat --VcE sat
Collector cutoff current leBO = f(TA ) DC current gain h" = f(lel

VeB = VeE max VeE = 5 V
'" r ....
1~OC
25°C
i
III
i
I
I
I
l. . 5
max. ~ -55°C II
.,
I
V
f7 I..- !
Vtyp.
5
5
!
103 i
50 100 150 DC 10-1 5 100 5 10 1 5 10 2 5 103 mA
-7;. -Ie
Siemens 833
NPN Silicon Transistors 5MBT6428
5MBT 6429


5MBT 6428 S1 K upon request upon request SOT 23
5MBT 6429 S1 L upon request upon request SOT 23
Maximum ratings
Parameter Symbol 5MBT 6428 5MBT6429 Unit

Emitter-b~se voltage VEBO 6 V
TA = 25°C

Thermal resistance
Junction-ambient RthJA :s; 375 K/W
Package mounted on
alumina
15 mm x 16.7 mm x 0.7 mm
834 Siemens
5MBT 6428
5MBT 6429

Collector-emitter breakdown voltage VIBRICED
le= 1 mA 5MBT 6428 50 - - V
5MBT 6429 45 - - V
Collector-base breakdown voltage VIBRICBO
le= 10 fJA 5MBT 6428 60 - - V
5MBT 6429 55 - - V
IE= 1 fJA
Collector cutoff current leBO
VCB = 30 V, IE = 0 - - 10 nA
VCB = 30 V, h = 0, TA = 150 °C - - 10 ~A
Collector cutoff current leED - - 100 nA
VcE =30V,I B =0
Emitter cutoff current lEBo - - 10 nA
VEB = 5 V, Ic = 0
DC current gain hFE
le= 10 fJA, VCE = 5 V 5MBT 6428 250 -
5MBT 6429 500 -
IC = 100 fJA, VCE = 5 V 5MBT 6428 250 650 -
5MBT 6429 500 1250 -
le = 1 mA, VCE = 5 V 5MBT 6428 250 -
5MBT 6429 500 -
le = 1 0 mA, VCE = 5 V 5MBT 6428 250 -
5MBT 6429 500 -
Collector-emitter saturation voltage 1} VCEs,t
le= 10 mA; IB = 0.5 mA - - 0.2 V
IC= 1 00 mA; I B = 5 mA - - 0.6 V
Base-emitter voltage VBElonl 0.56 - 0.66 V
IC= 1 rnA; VCE = 5 V

Transition frequency fT 100 - 700 MHz
le = 5 rnA, VCE = 5 V. f = 100 MHz

VCB = 10 V, f = 1 MHz
VEB = 0.5 V, f= 1 MHz
I) Pulse test: t:5 300 fjs, D:5 2 %
Siemens 835
5MBT 6428
5MBT 6429
Total power dissipation p.o. = f( TA ) Collector-base capacitance CeBo = f(VeBo)

mW PF
400 12
-':01
I 300
~b.
8
"" ......
1\
""- "- /CCBO
200 \
1\
1\
6
4
1'0
"""
"'-
....
, / 1' ....
\ C EBO
100
\
1\ 2
o 1\
o 50 100 150°C 5 10 0 5 10' V
- VCBO (VEBO)
-~
Pulse handling capability r'h = f(t) Transition frequency fT = f(lel

Iii
100
1 tR
11 t'O,5
0,2
~r-
0,1
5 0,05
I
/V'
0,Q2
0,01 Ii
0,005
0=0 1111 5
10-2
10-3
0=1
T1t::f1-
,to,
T
10-6 10- 5 10- 4 10- 3 10- 2 10-1 100 10' s 5 10'
~f -I(
836 Siemens
5MBT 6428
5MBT 6429
Base-emitter saturation voltage Collector-emitter saturation voltage

Ie= fW"",) [e = fWeE "tl
h" = 40 h" = 40
mA
10 2
Ie Ie 5
100·( IT 77 II
) >->-
>- 25.~8J t
-SO·C
- 50 .(1 I II II
I A
VV 2S·C
l00·C
10-
, 10- ,
o 0,2 0,4 0,6 0,8 1,0 1,2 V o 0,1 0,2 0,3 0,4 0,5 V
VeE sat -VcEsat
Collector current Ie = f(VB ,) DC current gain h" = f(Iel

VeE = 1 V VeE = 1 V
7
f-l00 .( f-
a 1=
1=
~
-50·(
I-
J II
100·C I 2S·C -so·c 5
lO-
,
5
S
2 I
10°
0,5 1,0 V 10-2 5 10-' 5 10° 5 10' 5 10 2 mA
-Ie
Siemens 837
5MBT 6428
5MBT 6429
Collector cutoff current leBO = f( TA )
ma~I' 1/
10'
1.1
5
typo
, /
50 100 150 0 (
-7A
838 Siemens
NPN Silicon AF Transistors 5MBTA 05
5MBTA06
• High break down voltage

• Complementary types: 5MBTA 55, 5MBTA 56 (PNP)

5MBTA05 S1H Q68000-A6402 Q68000-A3430 SOT 23
5MBTA06 S1G Q68000-A6403 Q68000-A3428 SOT 23
Maximum ratings
Parameter Symbol 5MBTA05 5MBTA06 Unit
TA = 25°C
Storage temperature Tstg -65 .. ·+150 °C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 839
5MBTA05
5MBTA06

Ic = 1 rnA 5MBTA05 60 - - V
5MBTA06 80 - - V
Ic = 100 IJ.A 5MBTA05 60 - - V
5MBTA06 80 - - V
IE = 10 IJ.A
VCB = 60V 5MBTA05 - - 100 nA
VCB = 80V 5MBTA06 - - 100 nA
VCB = 60 V, TA = 150°C 5MBTA05 - - 20 IJ.A
VCB = 80 V, TA = 150°C 5MBTA06 - - 20 IJ.A
Collector cutoff current ICEO - - 100 nA
VCE = 60V
Ic = 10 rnA, VCE = 1 V 50 - - -
Ic = 100 rnA, VCE = 1 V 50 - - -
Ic = 100 rnA, VCE = 1 V

Ic = 20 rnA, VCE = 5 V, f= 20 MHz
VCB = 10V, f= 1 MHz
840 Siemens
5MBTA05
5MBTA06
Total power dissipation P,o' = ((TA) Collector current Ie = f (VeE sat)
mW rnA
400 10 J
~ot 1-"- I-l00 0 (

1---1--- I--- 25°(,
t 300
-50 O( '1.'1
\.
200 10' II
I\,
100
\ I
i".
o I\, lO-
, II
o 50 100 150 O( a 0,5 1,0 1,5 V
-7;. -Val
Pulse handling capability r'h = f (t) Transition frequency fT = f (l c)

K
Iii
10°
R
-
lih 5
f ,
I
"0,5
0,2
0,1
5 0,05
0,02
0,01
0,005
2 0=0 IIII 5
/
5 V
~
tp
O=y I--- T
10- J "'
10-6 10- 5 10- 4 10- J 10- 2 10-' 10° 10' S 5 101
-t
Siemens 841
5MBTAOS
5MBTA 06
Base-emitter saturation voltage I c = f (VBE sad Collector-emitter saturation voltage

hFE = 10 Ie = f( VeE sat)
hFE = 10
mA
10 3
Ie
100 °c' ./ 100 "C
I-
H- 25 o~"
_ 50 °c, il/I/ // / /,25 °c
1 //~ ~ :::: -50 o C
II
5
10' I II
,
0,5 1,0 1.5 V 0,2 0,4 0,6 0,8 V
-~VBEsat -~VcEsat
Collector cutoff current I CBO = f ( TA) DC current gain h FE = f (l c)

VCB = VCEmax VCE = 1 V
nA
10 4
5
1/
max ~/
-100 °c
125 °c i""-
f..... / =50 0
5 ;;;
-
-
typ,
10'
5 10'
, /
10°
50 100 150 °c 10-1 5 1fP 5 10' 5 10 2 5 103 mA
-TA -Ie
842 Siemens
NPN Silicon Darlington Transistors 5MBTA 13
5MBTA 14

• Collector-emitter saturation voltage

5MBTA 13 S1M Q68000--A4331 Q68000--A6475 SOT 23
5MBTA 14 S1N Q68000--A4332 Q68000--A6476 SOT 23
Maximum ratings
TA = 25 DC

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 843
5MBTA 13
5MBTA 14

Ie = 10 flA
Ic=10flA
Ie = 10 flA
Collector cutoff current ICBO - - 100 nA
VCB = 30V
VEB = 10V
DC current gain hFE
Ic = 10 mA, VCE = 5V')
5MBTA 13 5000 - - -
5MBTA 14 10000 - - -
Ic = 100 mA, VCE = 5 V')
5MBTA 13 10000 - - -
5MBTA 14 20000 - - -
Ic = 100 mA, IB = 0,1 mA
Ic = 100 mA, IB = 0,1 mA

Ic = 50 mA, VCE = 5 V, f= 20 MHz
844 Siemens
5MBTA 13
5MBTA 14
Total power dissipation P tot = f( TA) Capacitance Gcso = f(Vcso)

Geso = f (Veso)
f= 1 MHz
mW pF
400 10
[ EBO
~ot I[ CBO)
-
t t
300
200
\.
5
'"
"'- ",, .
~BO
I\, h'-.... I'-.... ....
[EBO
\
100
\
o I\,
o 50 100 150 0 ( 5 10 0 5 10 ' V
-7;, - - - VEBO ( VcBol
Pulse handling capability rth = f(f) Transition frequency fr = f (I cl

(standardized) VCE = 5 V, f= 20 MHz
K
W
10 0
10-
, ~
l1li '0,5
0,2
I
0,1
5 0,05 /'
, 0,02
0,01
0,005
I D=O 1111 5
o=f1tn-
10-1
i--- r-i ,
~~ w· ~ WI
'" ''''~ ~ ~s 5 10'
-t
Siemens 845
5MBTA 13
5MBTA 14
Base-emitter saturation voltage VSE sa' = '(l el Collector-emitter saturation voltage

hFE = 1000 VCEsa, = f(Iel
hFE = 1000
mA mA
1Ql 10l
5
150°C4i 25 OC
Ie I
10 2 /I -50°C /1/
r
5 L11
5
I
IL
125°C
1--25°C
10'
-55°C
==
10-' L-JLJL...L---'-_-'--_--'-_...L...----' 10°

o 2 3 V o 0.2 0,4 0,6 0,8 1,0 1.2 V
-VCE sat
Collector cutoff current I cso = '( TA) DC current gain hFE = '(Ic)
Vcs=30V VCE = 5V
;'
125°(
~~ °
5
~.1 max.
_55°(
1/ ..... r-
Vtyp.
10' 5
103
50 100 150°C 10-' 5 10° 5 10' 5 10 2 5 10 l rnA
--7;. -Ie
846 Siemens
NPN Silicon AF Transistor 5MBTA20

• Low coliector-emitter saturation voltage

5MBTA20 S1C 068000-A4333 068000-A6477 SOT 23
Maximum ratings
Coliector-emitter voltage VCEO 40 V
Coliector current Ic 100 mA
Peak coliector current ICM 200 mA
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 847
5MBTA20

Ic = 1 mA
le = 100 ~A
VCB=30V - - 100 nA
VCB = 30 V, TA = 150°C - - 20 ~A
VEB = 4 V
Ic=5mA, VCE= 10V
I C = 10 mA, I B = 1 mA

Ic = 20 mA, VCE = 5 V, f= 100 MHz
VCB = 10V, f= 1 MHz
848 Siemens
5MBTA20
Total power dissipation Ptot = t( TA) Collector-base capacltence CeBo = t(VeBo)

Emitter-base capacitance CEBO = t(VEBO)
t= 1 MHz
mW pF
400 12
T) "-
( eso
~ot (C 10
r-I-\.
t 300
" '\
8
\.
"'- r"- jeso
200
I\,
6
r-. "'"
..........
....
4
\ CE-;;: 1'- ....
100
1\
1\
o ~
o 50 100 150 0 (
--7;.
Pulse handling capability rth = t (t) Transition frequency tT = f (I c)

(standardized) VeE = 5 V, f= 100 MHz
K
'Vi MHz
10° 101
10-1
~
III 1'0,5
0,2
'r
t
5
-
0,1 /
0,05
0,02 V
0,01
0,005
0=0 IIII 5
10-I
~
tp
D=r I-- T-
10-1 '" '" 10'
~~ ~ W1 Wi ~ ~ ~s 10-' 5 10 ' 5 10 1 rnA
-t -Ie
Siemens 849
5MBTA20
Base-emitter saturation Yoltage Ie = f (VBE sat) Collector-emitter saturation Yoltage

hFE = 20 Ie = f(VeE5.t)
hFE = 20
~ ~
10 2 10 2
125°( 'f II " -50 0(

25°( I /
f _50°(,
t;~ f [r /100 0 (
25°(
II
5 5
10-
, II ,
o 0,2 0,4 0,6 0,8 1,0 1,2 V 0,1 0,2 0,3 0,4 0,5 V
----- VBE sat , - - - VCEsat
Collector cutoff current leBO = f (TA) DC current gain hFE = f (l c)

VeB = 30V VeE = 1 V
nA
10·
max. V
1/ r-100 O(
~
_50 0(
-
IL
k
typ.
10'
5 10'
, / 10°
50 100 150 O( 10- 2 5 10-' 5 10° 5 10' 5 10 2 mA
-JA -Ie
850 Siemens
NPN Silicon Transistors for High Voltages 5MBTA42
5MBTA43

• Complementary types: 5MBTA 92. 5MBTA 93 (PNP)

5MBTA42 SlO 068000-A4329 068000-A6478 SOT 23
5MBTA43 S1E 068000-A4330 068000-A6482 SOT 23
Maximum ratings
TA= 25°C
Thermal resistance RthJA :S; 350 K/W

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 851
5MBTA42
5MBTA43

Collector-emitter breakdown voltage VCBR) CEO
Ic = 1 rnA
5MBTA42 300 - - V
5MBTA43 200 - - V
Collector-base breakdown voltage VCBR)CBO
Ic = 100 ~A
5MBTA42 300 - - V
5MBTA43 200 - - V
Emitter-base breakdown voltage VCBR) EBO 6 - - V
iE = 100 ~A
VCB = 200 V 5MBTA42 - - 100 nA
VCB = 160V 5MBTA43 - - 100 nA
VCB = 200 V, TA = 150°C 5MBTA42 - - 20 ~A
VCB = 160 V, TA = 150°C 5MBTA43 - - 20 ~A
Emitter cutoff current iEBo - - 100 nA
VEB = 3 V
DC current gain hFE
Ic = 1 rnA, VCE = 10V 25 - - -
Ic = 10 rnA, VCE = 10 V') 40 - - -
Ic = 30 rnA, VCE = 10 V') 5MBTA42 40 - - -
5MBTA43 40 - - -
5MBTA42 - - 0,5 V
5MBTA43 - - 0,4 V
I c = 20 rnA, I B = 2 rnA

Ic = 10 rnA, VCE = 20 V, f= 100 MHz
VCB =20V, f= 1 MHz
5MBTA42 - - 3 pF
5MBTA43 - - 4 pF
') Pulse test: t ~ 300 ~s, D = 20/0.
852 Siemens
5MBTA42
5MBTA43
Total power dissipation P tot = t(TA) Transition frequency tT = t (l e)

VCE = 10 V, t= 100 MHz
mW MHz
400 103
Ptot
fr 5
1\
1 300
\
I
1\
200 1\
\
5
\.
100
I\.
V
/
o \
o 50 100 150°C 5 10'
-~
Pulse handling capability rth = t(t) Operating range Ie = tWCEO)

(standardized) TA=25°C,D=0
..
K
iii rnA
10° 103
5
'i.
I ,
IIIJ
'0,5
0,2
I'
10~s
0,1
5 0,05
, 0,02 10'
\\ 100 ~s
1m s
0,01
0,005 5 lOOms
2 0=0 1111
SOOms
DC
fp I--
0=.1
T
.fi.:.-rL.
--i
i-- T-,
10- 3 tiL UH ,
10- 6 10- 5 10- 4 10- 3 10- 2 10-' 10° 10' s 5 10'
-t
Siemens 853
5MBTA42
5MBTA43
Collector cutoff current I ceo = '( TA) Collector current Ic = '(VeE)

Vce = 160V VCE = 10V
nA mA
10 4 10 3
5 5
1"-
max. ."
je 10 2
5
k /
10 1
f-
typo 5
101
5
1 / 1
,
50 100 150 0( 0,5 1,0 1,5 V
-TA -VaE
DC current gain hFE = '(le)

VCE = 10V
F
1=
i=!
,--'
'-;
--
5
2
~
i
10 1
,
5
-!
,
--
100
10- 1 5' 100 5 10 1 5 10 2 5 10 3 mA
-Ie
854 Siemens
PNP Silicon AF Transistors 5MBTA 55
5MBTA 56

• Complementary types: 5MBTA 05, 5MBTA 06 (NPN)

5MBTA55 S2H Q68000-A7420 Q68000-A3386 SOT 23
5MBTA56 S2G Q68000-A7421 Q68000-A2882 SOT 23
Maximum ratings
Collector-base voltage VCBO, 60 80 V
TA = 25°C

Junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 855
5MBTA55
5MBTA56

Collector-emitter breakdown voltage V(eR) CEO
Ic = 1 mA
5MBTA55 60 - - V
5MBTA56 80 - - V
Collector-base breakdown voltage V(eR) ceo
Ic = 100 itA
5MBTA55 60 - - V
5MBTA56 80 - - V
IE = 10 ItA
Vce = 60V 5MBTA55 - - 100 nA
Vce = 80V 5MBTA56 - - 100 nA
VCB=60V, TA= 150°C 5MBTA55 - - 20 itA
Vce = 80 V, TA = 150°C 5MBTA56 - - 20 ItA
Collector cutoff current ICEO - - 100 nA
VCE = 60V
Ic= 10 mA, VCE = 1 V 50 - - -
Ic = 100 mA, VCE = 1 V 50 - - -
Collector-emitter saturation voltage ') VCE(sat) - - 0,25 V
Ic = 100 mA, IB = 10 mA
Base-emitter saturation voltage ') VBE(sat) - - 1,2 V
Ic = 100 mA, VCE = 1 V

Ic = 20mA, VCE = 5V, f= 20 MHz
Vce = 10V, f= 1 MHz
') Pulse test: t~ 300 its, D = 20/0.
856 Siemens
5MBTA55
5MBTA 56
Total power dissipation Ptot = f (TA) Collector current Ie = f (VBE sat)

VCE = 1 V
rnW rnA
400 10 3
5
;:;,1 r-_ 1OOO(
"'\ 1-- 25 'C bL J
t 300
-50 o~'J Ii
1\
200 101
I
\
.'\
100 I
1\
o \ 10-1
o 50 100 150 ·C o 0,5 1,0 1,5 V
-VBE
Pulse handling capability rth = f (t) Transition frequency fT = f (l cl

K
W MHz
•
10° 10 3
1111
~Rll
I I
1 0,5
0,2
0,1
~ .....
0,05
, 0,02
v
0,01
0,005
2 0=0 1111 5
5
l"-
3
D=
T
1trr
!£.
1--- T _-j
10-
10-' 10- 5 10- 4 10- 3 10- 2 10-' 10°
'" 10' s 5 101
-t
Siemens 857
5MBTA55
5MBTA 56
Base-emitter saturation voltage VBE sat = '(l e) Collector-emitter saturation voltage

hFE = 10 VCE,at = '(le)
hFE = 10
mA
10 3
'=
100°C
f- 25 o~"
-S( °C f'll
Ie
t
5
'./
I' ,.,'" ~
{ V
100·C
25 ·C
-SO·C
I
5
I
,
0.5 1.0 1.5 V 0.5 1.0 V
----- VBE sat ~VcEsClt
Collector cutoff current I cao = '( TA) DC current gain hFE = '(l cl
VCB = VCEmax VCE = 1 V
If
max. V
'100°
25°C .....
..... -50°
5
typo
, / 10°
50 100 150°C '10-' 5 10° 5 10' 5 10 2 5 103 mA
-7i.. -Ie
858 Siemens
PNP Silicon Darlington transistors 5MBTA63
5MBTA64


5MBTA 63 S2U Q6800Q-A6419 Q6800Q-A2625 SOT 23
5MBTA 64 S2V Q6800Q-A6420 Q6800Q-A2485 SOT 23
Maximum ratings
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 859
5MBTA63
5MBTA64

Ic=10!lA
Ic=101lA
IE = 1O!lA
VCB = 30V
VEB=10V
Ic= 10mA, VCE=5V
5MBTA63 5000 - - -
5MBTA64 10000 - - -
Ic= 100mA, VCE=5V
5MBTA63 10000 - - -
5MBTA64 20000 - - -
Ic = 100 mA, IB = 0,1 mA
Ic = 100 mA, IB = 0,1 mA

Ic = 50 mA, VCE = 5 V, f= 20 MHz
') Pulse test: t:5, 300 !ls, D = 20/0.
860 Siemens
5MBTA 63
5MBTA64
Total power dissipation Ptot = f (TA) Collector-base capacitance C CBO = f ( V CBO)

f= 1 MHz
mW pF
400 10
[ EBO
I[ (BO)
Ptot
i 300
\
1\
I'" "I'-
~
I'- *BO
200 \ 5
't--
~ .....
[EBO
\
l"-
100
\.
o [\
o 50 100 150°C 10 0 5 10' V
-- VEBO I V(BO)
-~
Pulse handling capability rth = f (t) Transition frequency IT = f (I c)

( standardized) VeE = 5V
K
W MHz
10 0 10 3
'in
1 ,
It I
'0,5
0,2
0,1 I-"
5 0,05
, 0,02
0,01
0,005
1 D=O 1111 5
~
tp
D=y
f-- T ---J
10- 3 ""
10- 6 10- 5 10- 4 10- 3 10- 1 10- 1 10 0 101 S 5 10 1
-f
Siemens 861
5MBTA63
5MBTA64
Base-emitter saturation voltage Ie = ((VeE satl Collector-emitter saturation voltage

hFE = 1000 Ie = ((VeEsatl
hFE = 1000
mA
10l
Ie 5
III
t I //
5
I-
125°C
-25°C
101
-55°C ~
5
II
10-1 L..L.JL..I.---L_-.L_...L_-'-----1 10°

o 2 3 V o 0,2 0,1, 0,6 0,8 1,0 1,2 V
--\thSit
Collector cutoff current I ceo = ( TAl DC current gain hFE = f (I cl

nA
10' 106
V
125°C
·7<;0
l ... max.
-55°C
5
1.1 I......
10'
Dtyp.
5
10l
50 100 150°C 10-' 5 10° 5 10' 5 10 2 5 10l mA
--7;.. -Ie
862 Siemens
PNP Silicon Transistor 5MBT A 70


5MBT A 70 S2C upon request upon request SOT 23
Maximum ratings

Peak collector current IeM 200 rnA
TA = 25°C

Thermal resistance
Junction-ambient RthJA :5 375 K/W
Package mounted on
alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 863
5MBTA 70

Ie = 1 mA
h = 100 iJ A
Collector cutoff current I CBO
V CB = 30 V, IE = 0 - - 100 nA
VCB = 30 V. h = 0, TA = 1 50°C - - 20 iJA
Emitter cutoff current hBo - - 20 nA
V EB = 4 V, Ie = 0

Ie = 5mA, VCE = 10 V
Collector-emitter saturation voltage 1 ) VCEsat - - 0.25 V
Ie = 10 mA; IB = 1 mA

Ie = 5 mA, VCE = 10 V, f= 100 MHz
V eB = 10 V, f = 1 MHz
864 Siemens
5MBTA 70
Total power dissipation PIo1 = f( TA) Saturation voltage Ie = f( VB' "I, VC",')
rnW
400 2
~o,
/
v V
1/
1--"
t 300
, I L
I
i/
\.
200 , \.
VcE lVBE
100
, 5
1\
o 1\
o 50 100 150 D( 0,2 0,4 0,6 0,6 V 1,0
--T;,
Small-signal current gain h,. = f(lel DC current gain hFE = f(lel

VCE = 10 V, f = 1 MHz (standardized), Vc, = 1 V
101
1 125°(
- ....... 1--' ~Jl~~

_55°(
l-
5 5
I
,\
5 101 rnA 102

~
5 rnA 101
-Ie • Jc
Siemens 865
5MBT A 70
Total power dissipation P'o' = f(TA ) Saturation voltage Ie = f(V. E ,,,, VeE",)
rnW
400 2
V
~ol
r-
rnA
/
'/ if
t-- 300 J I
il
\.
200
\.
1'cE /V eE
\ 5
100
1\
o \
o 50 100 0,2 0,4 0,6 0,6 V 1,0
--~ - VeE.al ,VeE.al
Small·signal current gain h'e = f(lel DC current gain h" = f(lel

VeE = 10 V, f = 1 MHz (standardized), VeE = 1 V
5~f-+H++HI-+-t+ttttll--t-t-t+ttttt---1
-
5
10·'L-LLllllllL..Ll.LLlillL:-'-LLLWlL~.,w
10·' 5 100 5 10' rnA 102
-Ie -Ie
866 Siemens
PNP Silicon Transistors for High Voltages 5MBTA92
5MBTA93

• Complementary types: 5MBTA 42, 5MBTA 43 (NPN)

5MBTA92 S2D Q6800Q-A4338 Q6800Q-A6479 SOT 23
5MBTA93 S2E Q6800Q-A4339 Q6800Q-A6483 SOT 23
Maximum ratings
TA = 25°C

junction - ambient
package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
Siemens 867
5MBTA 92
5MBTA 93
DC characterl~tlcs Symbol min typ max Unit

Ic = 1 mA
5MBTA92 300 - - V
5MBTA93 200 - - V
Ic = 100 f.IA
5MBTA92 300 - - V
5MBTA93 200 - - V
Ie = 100 f.IA
VCB = 200 V 5MBTA92 - - 250 nA
VCB=160V 5MBTA93 - - 250 nA
VCB = 200 V, TA = 150°C 5MBTA92 - - 20 JlA
VCB = 160V, TA = 150°C 5MBTA93 - - 20 f.IA
Emitter cutoff current IeBO - - ,
100 nA
VEB = 3V
DC current gain hFE
Ic = 1 mA, VCE = 10V 25 - - -
Ic = 10 mA, VCE = 10V') 40 - - -
Ic = 30 mA, VCE = 10V') 5MBTA92 25 - - -
5MBTA93 25 - - -
Collector-emitter saturation voltage ') VCE,at
I C = 20 mA, I B = 2 mA
5MBTA92 - - 0,5 V
5MBTA93 - - 0,4 V
Base-emitter saturation voltage ') VBE,at - - 0,9 V
Ic = 20 mA, IB = 2 mA

Ic = 10 mA, VCE = 20 V, f= 100 MHz
5MBTA92 - - 6 pF
S~BTA93 - - 8 pF
') Pulse test: t:5. 300 Jls, D = 20/0.
868 Siemens
5MBTA92
5MBTA93
Total power dissipation Ptot = t (TA) Transition frequency tT = t (I cl

VCE = 20 V, t= 100 MHz
mW MHz
400 10 3
Ptot 1\
r 300
\
1\
200
\
1\
I\.
100 v
II\. /
o 1\
o 50 100 150°C 5 10' 5 10 2
-~ -Ie
Pulse handling capability rth = t (t) Operating range Ie = t(VCEO)

(standardized) TA = 25°C, D = 0
K
W
10°
lih 5
r ,
II 1'-,1 I
0,5
0,2
5
I".
10~s
0,1 ~
5 0,05
0,02 10'
\ \ 100 ~s
1ms
0,01
0,005 5 10ums
2 000 1111
500ms
DC
5
~
~
D=..E..
T
lLn- fpf---
10-3 '"
I- T-i
""
,
10-6 10- 5 10-' 10- 3 10- 2 10-' 100 10' s 5 10'
~f
Siemens 869
5MBTA 92
5MBTA 93
Collector cutoff current I CBO = f ( TA) Collector current I C = f (VBE)

VCB = 160V VeE = 10V
nA rnA
104 10 3
5
rnax;..'~ 1/
10'
typo
10'
5
, 1/ 10·
, I
50 100 150 .( a 0,5 1,0 1,5 V
-J.;. -----VSE
DC current gain hFE = f (I c)

VCE = 10 V
10
l
gUE• •
w. . . .
100 L....L...L.U.llllL.....L.L.Lll.ll!L--'...J.-'..LU.llL-.L..LJLlllllJ
10·' 5 10° 5 10' 5 10 2 5 10 3 rnA
-Ie
870 Siemens
SIPMOS N Channel MOSFET SN 7002

• Drain-source voltage '-bs = 60V
• Drain-source on-resistance ReS<on)= 5.00

SN 7002 SG Q67000-S063 SOT 23
Maximum Ratings

Drain-gate voltage \.bGR 60 V RGS =20 kO
Pulsed drain current I Dpulll 0.76 A TA =25°C
Peak gate-source voltage V.> ±20 V aperiodic
Thermal resistance
Chip - air RthJA :5350 KNV Mounted on
Chip - substrate rear side Rth JSR :5285 Ceramic substrate
2.5cm2
Siemens 871
SN 7002
CondlUon
Drain-source V(BA)DSS 60 - V Val =0

breakdown vottage 'D =0.25 rnA
Val = VDI
Gate threshold vottage 0.8 1.4 2.0 V
Vas(th) 'D =1 rnA
Zero gate voHage 0.1 1.0 jlA 1j =25"C
drain current Dsa
' Vas =0
VDI =60V
Gate-source leakage I ass - 1.0 10 nA Val =2OV, VDS = OV

current
Vas =10V
Drain-source on-state RDS(on) - 2.0 5.0 0 I D =O.SA
resistance - 3.0 7.5 0 Vas =4.5V
I D =O.OSA
Dynamic characterlBtlcs
Forward transconductance g,. 0.1 0.18 S VDI .,,2*/D * RDS(on)max

ID =0.2A
Input capacitance Vas =OV

C,•• 40 60 pF
VDI =25V
f =1MHz
Output capacitance Co •• - 15 25
Reverse transfer Cn • 5 10
capacitance
Tum-on time ton t d(on) 5 8 ns Vee =3OV

(ton =td(on) +t,) t, - 8 12 Val =1OV
Tum~off time t off t d(off) - 12 16 I D =-O.29A
(t off =t d(off) +t ,) ROl =500
t, 17 22
Reverse diode
Continuous source
current
Is - - 0.19 A
Diode forward on-voHage VSD 0.85 1.2 V Val =OV

IF =0.2BA
Reverse recovery time trr - - ns VA =100V, 'F = 'D A

diF /dt = 100A!jls
Reverse recovery charge Orr - - jlC VA =100v, 'F = ID A

dlF /dt = 100A!jl8
872 Siemens
SN 7002
Vee
V
90%
Pulse
Generator r Vas
90%
r····························1
Permissible power dissipation versus tempersture Typical output characteristic

PD = fTA 'D =fVD8
X AxIs: TA /'C X AxIs: VD• / V
V AxIs: PD /W V Alds: , D /A
p.
k lOV
\ e
p. 0.36
~
.V
\ '. IV
'-'v
3
\ 1..
eV
7V
r ){
4V
, \
\ f \
~ II ••V
\
\ V
1 "- 3V
\
1\
r-- -
2.5V
o
o 100
--TA
C
\
150
'/
----110.
'v
.
Siemens 873
SN 7002

'D =fVD1 1 D = fV ClI
X Axis: VDS I V X Axis: VClS IV
V Axis: 'D IA V Axis: 'D IA
Parameter: D = 0.01, D =tp IT; Tc = 25"C Paramater: VDS = 25V; t p = 80jJs; 1j = 25"C
D_2 II-~-n
T ...-1 1=,
'0'
'p' I. I
3051'
I
I.
1,0'
v
1"'- , ,
,
100111
'm.
l'.. II
10ml I
I
I
'"
100ml
10'~
1"'-
J
V
I
o
o
10 1 5 V 10 z
- - - Vos

g,. = tiD R DS_n = fT J
'D X Axis:
g,. IIS
X Axis: A T J 1°C
V Axis: V Axis: RDs _n I ()
Parameter: VDI .. 2· 1 D • R Da_n mox ; t p = 80jJs; Paramater: V CIS = 10V; 1D = O.SA
TJ =25"C
g,. ,..
.>~
V RDS(on ) /
1
/
1 /
V / .,,'
/
I
0.'
I V-
I/' "....-
"....-
1 '-' '-'
....... typo
-~
o
o A 0.7 C 180
---_I. ----TJ
874 Siemens
SN 7002
C = fV DS
X Axis: vDS I V
Y Axis: C I nF
Parameter: VGS =0; f = lMHz
,,'
c
\\
\\
,
Gial
\ I'--
Co ..
,,'
v, ..
---vos

f D = fTA VGSlh = fTI
X Axis: TAl 'C X Axis: Tj I 'C
Y Axis: I D I A Y Axis: VGSlh I V
Parameter: VGs= VDS ; I D = 1rnA
10 A
-
""'"
VaS(th )
'" '\
\
4
\
r\ ''''
....
\
1\
r-..
-- ,%--
r- ~.".
- ....
----
....
-
o
-
o
-_T, 100 C
Siemens 875
SN 7002

RDSon = "D
X Axis: 'D fA
Y Axis: R DSon f Q
VG•
,..,
.
"V
) '" '" '"
V /
./
; :::::: ~ -- 10V
",
9~
V
~
'v
V
7V
i--" ....
'v
;:;...
'0
, F =fVSD
X Axis: VsDfV
YAxis: , F fA
Parameter: t p =8~s; TJ
",
'F , 15<
:
"" W %
25 ; p.
J r- ,""
~
1/
2
- - - Vso
876 Siemens
SIPMOS P Channel MOSFET SP Q610T

• Drain-source voltage Vos = -60V
• Continuous drain current /0 = -0.13A

SP 0610T SF 067000-S065 SOT 23
Maximum Ratings
Drain-source voltage VDS -60 V

Drain-gate voltage ~GR -60 V RGS =20 kO
Continuous drain current /0 -0.13 A TA =36"C
Pulsed drain current J Opul. -0.52 A TA =25°C
Peak gate-source voltage V.s ±20 V aperiodic
Operating and storage Tj
temperature range Tst. -55 ... +150 °C
Thermal resistance
Chip - air RthJA :5350 K/W Mounted on
Chip - substrate rear side Rth JSR :5285 Ceramic substrate
2.5cm2
Siemens 877
SP 0610T
Condition
Drain-source V(BR)DSS -60 V Vas =0

breakdown vottage ID =0.25 rnA
VDS = Vas
Gate threshold vottage Vas(th) -1.0 -1.5 -2.0 V
ID =1 mA
Zero gate vottage IDSS -0.1 -1.0 IlA TJ =25°C
drain current VDS = -6OV
Vas = OV
Gate-source leakage I ass -1.0 -10 nA Vas =-20V, VDS =0V

current
Vas = -10V
Drain-source on-state RDS(on) 6.0 10.0 0 I D = -0.2A
resistance 9.0 0
12.5 Vas = -4.5V
I D = 0.025A
Forward transconductance gt. 0.06 0.075 - S VDS :<2*/D * RDS(on) max

ID=-O.5A
Input capacitance Vas =OV

CI.. 30 45 pF
VDS = -25V
f =IMHz
Output capacitance Co .. 17 25
Reverse transfer Cr •• a 12
capacitance
Turn-on time ton t ~(on) 8 12 ns Vcc =-SOV

(t on =t d(on) +t,) t, 35 50 Vas =-10V
a 10 I D =-0.27A
Turn-off time toll t d(oll)
Ras =500
(t oil =t d(olt) +t t) I, 20 25
Reverse diode
Continuous source Is -0.12 A

current
Pulsed source current ISM - -0.48 A
Diode forwerd on-vottage VSD -0.B5 -1.2 V Vas =OV

IF = -O.IBA
Reverse recovery time Irr ns VR = -SOV, IF = ID R

diF /dt = -100NIlS
Reverse recovery charge Orr Il C VR = -SOV, IF = ID R

di F /dt = -100NIlS
878 Siemens
SP 0610T
Vcc
v Vos

Po =fTA 'D =fVos
X Axis: TA I"e X Axis: Vos IV
YAxis: Po IW YAxis: '0 IA
-3' I Po 0.36 Iv
Po 10V I /
l-- -.v
'j. Tj II 1/
1\ -BV
-7V
tR 'J J
,
(If V II 1..-,""" 5V
1\
I (fj IV V
[\
/I (f v, V
2 1111 'J V -4 V
1\ fIJI II 1/ "",
1\
-1
• 'fill lP' "
4V
1\ rJ ~ ....
1
r~ ./
-3r-V'"
.\
rl
3V
1\
.
-25V
\ V
• -1 -3 -4
~---. Vos
Siemens 879
SP 0610T

'o=fVOS 'D =fVas
X Axis: Vos I V X Axis: Vas IV
Y Axis: IA '0 Y Axis: IA '0
Parameter: 0 = 0.01, 0 =t piT; Tc = 2S'C Parameter: Vos = -25V; t p = 80j.ls; 1j = 2S'C
RDS(on)"VDSIID
t
D ... -.!. It_~- 0
T ..... T 1_ t
10'
tp=
3011S
10 II
10°11_
10
, ,,,,.
1··· I
1/ /
" r
10ms
'\. 100ml
/
1'\
II
/
/
V
10 1 5 V 10 1
' - ' - ' - - Vos

g,.=fi o RoS.n= fT,
X Axis: '0 IA X Axis: T, I'C
Y Axis: g,. / s Y Axis: Ros.n / 0
Parameter: Vos "" 2· I 0 • R OS.n max ; t p = 80IlS; Parameter: Vas = -10V; 10 = 0.2A
T, = 2S'C
g t. .1'
1.-1-
" II
RaSCon )
V 1/
11 2
V
1/
0 1
/ '"''
· 17 0
V
V
V
/
· I
,,/
V
V
1/
typo
·/ ---- ---- ----

2
0
A ~O.EI
----I, ---_T)
880 Siemens
SP 0610T
C = fV DS
X Axis: VDs/V
y Axis: C InF
,,'
c
,,'
...... t-
"'- t--, ...... c...
j"-. "-
r--
'\ Co ..
,,'
---v,s
Drain curren1 Gate threshhold voltage (spread)

J D = fTA VGSlh = fT, .
X Axis: TA I·e X Axis: T, I·e
Y Axis: J D I A Y Axis: VGSlh I v
Parameter: VGs= VDS ; J D = -1mA
v~+-~-+--~+--r-1--+-~-+-1
v GS(th)~+-~-+--~+--r-1--+-~-+-1
'\
1 -4 f--+--+-+-+---+-+---+-+--t--H
"'- '\.
\
\
\
- typ. -r-
-- ---
!\ -..
\
o
o
I -100 C'
- - TJ
Siemens BB1
SP 0610T
TVplcal draln-source on-state resistance

RDSon = fI D
X Axis: I D fA
Y Axis: R DSon f 0
Parameter: VGS ; 1j = 25"C
Q
., V -3V -35 4V >V ·5V
II
II
/ /
1/
Vv V .<V
I--" ...........
..... """r- r- .
i.
0.2 A
--I,
IF =fVSD
X Axis: VsDfV
YAxls: I F fA
Parameter: t p =80/1s; TJ
",
IF •
'~"". I ~
I"- ~/II Ie " '0,,,,
,.o,~
II ~5 'C; 8%
.,
- - - vso
882 Siemens
NPN Silicon Switching Transistor SXT 2222 A

E

SXT 2222 A S2P upon request upon request SOT 89
Maximum ratings

Collector-base voltage V CBO 75 V
Total power dissipation Ptat 1 W
TA = 25°C
Thermal resistance
Junction-ambient RthJA ::; 125 KjW
Package mounted on
alumina
15 mm X 16.7 mm X 0.7 mm
Siemens 883
SXT 2222 A

Collector-emitter breakdown voltage V(BRICEO 40 - - V
Ie=10mA
Collector-base breakdown voltage V(BRICBO 75 - - V
Ie= 10 IJA
Emitter-base breakdown voltage V(BRIEBO 6 - - V
IE = 10 IJA
Collector cutoff current IeBO
VCE = 60 V. le=O - - 10 nA
VCE = 60 V. IE = 0, TA = 1 25°C - - 10 IJA
Collector cutoff current IeEx - - 10 nA
VeE = 30 V, V BE = 0.5 V

V EB = 3 V, Ie = 0
Base cutoff current IBL - - 20 nA

VCE = 30 V, V BE = - 3 V
DC current gain hFE

Ie = 100 IJA. VeE = 10 V 35 - - -
Ie = 1 rnA, VCE = 10 V 50 - - -
Ie= lOrnA. V cE =10V 75 - - -
Ie = lOrnA. VCE = 10 V, TA = - 55°C 35 - - -
Ie = 150 rnA, VCE = 10 V 100 - 300 -
Ie = 1 50 rnA, VeE = 1 V 50 - - -
Ie = 500 rnA, VeE = 10 V 40 - - -
Ie = 150 rnA; IB = 15 rnA - - 0.3 V
Ie= 500 rnA; I B = 50 rnA - - 1.0 V
Ie = 1 50 rnA; I B = 1 5 rnA 0.6 - 1.2 V
Ie = 500 rnA; IB = 50 rnA - - 2.0 V
1) Pulse test: t:5 300 f.is, D :5 2 %
884 Siemens
SXT 2222 A

I C = 50 mA, VCE = 20 V, f = 100 MHz
VCB = 10 V, f = 1 MHz
Input impedance hie kO
I C = 1 mA; VCE = 10 V, f = 1 kHz 2 - 8
I C = 10 mA; VCE = 10 V, f = 1 kHz 0.25 - 1.25
Voltage feedback ratio h re x1Q-
Ie= 1 mA; VCE = 10 V, f = 1 kHz - - 8
Ie= 1 0 mA; VCE = 1 0 V, f = 1 kHz - - 4
Small-signal current gain hIe -
Ic = 1 mA; VCE = 10 V, f = 1 kHz 50 - 300
Ie = 10 mA; VCE = 10 V, f = 1 kHz 75 - 375
Output admittance hoe iJS
Ie = 1 mA; VCE = 10 V, f = 1 kHz 5 - 35
I C = 10 mA; VCE = 10 V, f = 1 kHz 25 - 200
Collector-base time constant rb'ec - - 150 ps
IE = 20 mA, VCB = 20 V, f= 31.8 MHz
Ic = 100 iJA, VCE = 10 V, Rs = 1 kO,f= 1 kHz
Switching times
Vcc = 30 V, VBE = 0.5 V, Ie = 150 mA, td - - 10 ns
IB1 = 15 mA tr - - 25 . ns
Vcc = 30 V,Ic = 150 mA,IB1 = IB2 = 15 mA tl - - 60 ns
Test circuits
30V
~100~s
30V
Siemens 885
SXT 2222 A
Total power dissipation p.o. = f( TA ) Collector-base capacitance

Ccb = f(VeB)
f= 1 MHz
W pF
1,2 102
5
I\.
0,8
1\
1\
1'\ t-t--
0,6
I\. I
1\ 5
,...
0,4
1\
,0,2
I\.
f'\
°° 50 100
-7;:
150 0 (
--VCB
Pulse handling capability r'h = fIt) Transition frequency fT = f(lel

iii
10°
'ih 5 !.-
~
~ III
t ~
I
1 "0.5
0.2
0.1
[,..-'
,
5 ~~ 0.05
II
0.02
0.01
0.005
0=0
2 5
0=; t.~
T
1)"'3 1
10-6 10-5 10-4 10-3 10-2 10- 1 100 S 5 10'
-t
886 Siemens
SXT 2222 A
Saturation voltage Ie = fIV",,,, VeE,,,) DC current gain hFE = f(lel

hFE = 10 VeE = 10 V
1/
(VeE / VSE
175°(
2~J( \
f-
I
_55°(
5 ,....
10- o
1
0,2 0,4 0,6 0,8 1.0 1.2 V
- - VSE sat' Vu sat
Delay time td = f(Iel Storage time t, = f(lel

Rise time t, = f(lel Fall time t f = f (lcl
ns
103~!I~~ml
\
s,
\ '\ ",hFE =10

5 hFE =20
~ tf
'"
hFE -10
'- P>o
I
5 5
-Ie -Ie
Siemens 887
PNP Silicon Switching Transistor SXT 2907 A

E

SXT 2907 A S2F upon request upon request SOT 89
Maximum ratings
Pa~ameter Symbol Ratings Unit

TA = 25°C
Thermal resistance
Junction-ambient RthJA ::; 125 K/W
Package mounted on
alumina
15 mm x 16.7 mm x 0.7 mm
888 Siemens
SXT 2907 A

Collector-emitter breakdown voltage V{BR)CEO 60 - - V
Ie=10mA
Collector-base breakdown voltage V{BR)CBO 60 - - V
Ie = 10 IJA
Emitter-base breakdown voltage V{BR)EBO 5 - - V
h = 10 IJA
Collector cutoff current
VCB = 60 V, IE = °
VCB = 60 V, IE = 0, TA = 125°C
I cBo
-
-
-
-
10
10
nA
IJA
Collector cutoff current IeEX - - 50 nA
VCE = 30 V, V BE = 0.5 V

V EB = 3 V, I C = 0
Base cutoff current I BL - - 50 nA

VCE = 30 V, V BE = 3 V
DC current gain hFE

Ie = 100 IJA, VCE = 10 V 75 - - -
IC = 1 mA, VCE = 10 V 100 - - -
Ie = 10 mA, VCE = 10 V 100 - - -
Ie = 150 mA, VCE = 10 V 100 - 300 -
Ic = 500 mA, VCE = 10 V 50 - - -
Collector-emitter saturation voltage 1) VCE,at
Ie = 150 mA; IB = 15 mA - - 0.4 V
Ie = 500 mA; IB = 50 mA - - 1.6 V
Base-emitter saturation voltage 1 ) VBE,at
Ie = 150 mA; IB = 15 mA - - 1.3 V
Ie = 500 mA; I B = 50 mA - - 2.0 V
1) Pulse test: t:5 300 f.ls. D:5 2 %
Siemens 889
SXT 2907 A

Ie = 50 mA, VeE = 20 V, f= 100 MHz
VeB = 10 V, f = 1 MHz
Switching times
Vee = 30 V, VBE = 0.5 V, Ie = 150 mA, td - - 10 ns
IB1 = 15 mA tr - - 40 ns
Vee = 6 V, Ie = 150 mA, IB1=/B2 =15 mA t, - - 30 ns
Test circuits
-30V -6V
Input Input
Zo=5011 Zo =50 11
tr < 2ns tr <2ns 1k
-~0-{ <>--1r-C::J---H
-~0-{FOI1
200ns 200ns
890 Siemens
SXT 2907 A
Total power dissipation Ptot ~ f( TA ) Collector-base capacitance

Co. ~ f(VeB)
f ~ 1 MHz
W
1,2
r10
.
0,8
1\
f\
f\
1\
0,6
1\ I
0,4
1\
1\
1\
0,2
\
o i\
o 50 100 150 0(
--~ -lice
Pulse handling capability rth ~ fIt) Transition frequency fT ~ f(lel

K (standardized) VeE ~ 20 V
iii
MHz
100
II
10 3
5
'ih
t , II ~,50,2
2 V
0,1
5 0,05
"-
0,02 1/
0,01
0,005
2
0=0 1111
5
5
~
tp 2
O=r T
,,:
10-3
10-6 10-5 10-4 10- 3 10- 2 10-' 100 10' s
-t
Siemens 891
SXT 2907 A
Saturation voltage Ie = f(V.E,'" VeE"t) Delay time t, = f(lel

hFE = 10 Rise time t, = f (Iel
hFE = 10
ns
103
1111
~ ,,- - ~-- VBE-OV;Vcc-l0V~
- - - - VBE -2.0VYcc=30V
/ VCE 1/ VBE
- N
II
r----
i.~
td 1\
,\ .-
5 \
\1\
1\ r\
\
1\ r"1-
101
o 0.2 0.4 0.6 O.B to 11 11+ 1.6 V
- VBE,a!' VCEsa! - - - Ic
Storage time t, = f(lel Fall time tf = f (Iel
.~
ts 5 c-- ~ ,+1J.t
Vcc=30V
I !
I
c-
[\~FE=20 -
! \
I
I 1
hFE =1
~ \
-- ~
5 r---- FE- 1 5 -- .
~ ~
Iy'
1---
~,
1"\ f---- -
IhFE= 20
r---- r--...
---Ic -Ic
892 Siemens
SXT 2907 A
DC current gain h" = f(lel
175°C
,..
III
2S °C
~
5 -5 °C
Siemens 893
NPN Silicon Switching Transistor SXT 3904

E

SXT 3904 S 1A upon request upon request SOT 89
Maximum ratings
Collector-emitter voltage Vceo 40 V

Emitter-base voltage VeBo 6 V
TA = 25°C
Junction temperature 7i 150 °C
Thermal resistance
Junction-ambient RthJA :s; 125 KjW
Package mounted on
alumina
15 mm x 16.7 mm x 0.7 mm
894 Siemens
SXT 3904

Collector-emitter breakdown voltage V1BR)CEO 40 - - V
Ic = 1 mA
Collector-base breakdown voltage V1BR)CBO 60 - - V
Ie= 10 J.lA
Emitter-base breakdown voltage V1BR)EBO 6 - - V
I E =10J.lA
Base cutoff current IBL - - 50 nA
VCE = 30 V, V BE = - 3 V
Collector cutoff current I cEx - - 50 nA

VCE = 30 V, V BE = 3 V
DC current gain hFE

Ie = 1 00 J.lA, VCE = 1 V 40 - - -
Ie = 1 mA. VCE = 1 V 70 - - -
Ie = 10 mA. VCE = 1 V 100 - 300 -
Ie = 50 mA. VCE = 1 V 60 - - -
I C = 100 mA, VCE = 1 V 30 - - -
Collector-emitter saturation voltage 1 ) VCEsst
Ie = 1 0 mA; I B = 1 mA - - 0.2 V
Ic = 50 mA; IB = 5 mA - - 0.3 V
Base-emitter saturation voltage 1) VBEsst
I C = 1a mA; I B = 1 mA 0.65 - 0.85 V
Ie = 50 mA; IB = 5 mA - - 0.95 V
1) Pulse test: t $; 300 f./s, D $; 2%
Siemens 895
SXT 3904

Ic = 10 rnA, VCE = 20 V, f= 100 MHz
Vcs = 5 V, f = 1 MHz
VES = 0.5 V, f= 1 MHz
Input impedance hie 1 - 10 kO
IcE = 1 rnA; VCE = 10 V, f = 1 kHz
Voltage feedback ratio h re 0.5 - 8 Xl0-4
I C = 1 rnA; VCE = 10 V, f = 1 kHz
Sma"-signal current gain h fe 100 - 400 -
Ic= 1 rnA; VCE = 10 V, f = 1 kHz
Output admittance hoe 1 - 40 ~S
Ic = 1 rnA; VCE = 10 V, f = 1 kHz
Ic = 0.1rnA, VCE = 5 V, f= 10 Hz to 15 kHz
Rs = 1 kO
Switching times
Vcc = 3 V, VSE = 0.5 V, Ic = lOrnA. td - - 35 ns
lSI = 1 rnA tr - - 35 ns
Vee = 3 V, Ie = lOrnA. lSI = lB2 = 1 rnA tf - - 50 ns
Test circuits
1I 0ons
<tOns
0=2%
-+10.9 V
° 10 kS'!
o--c.:::J-+-l
-O.5V
I
J!:
+3.0V
275S'!
T<4.0pF'J
I
_oJ
.tL---t\-----,,-0 o-C:r-.-t--{
+3.0 V
< tOns
896 Siemens
SXT 3904
Total power dissipation P'o' = f(T.) Saturation voltage Ic = f(VBE "" VeE",)
W
1,2 2
r"
mA V
IC 10 2
)/ II
o r-..
0,8
1\ 15 I II
I
1\ I
1\
0,6
:\ I
VCE
I VSE
0,4
\
i\ 5
f'\
0,2
1\
o 1\ 100 I
o 50 100 150 DC o 0,2 0,4 0,6 0,8 1,0 V 1,2
-~ -VSEso! ,VCEso!
K Pulse handling capability r,. = f(t) Voltage feedback ratio h,e = f(lel
W (standardized) VCE = 10 V, f = 1 kHz
100 10'
5
,~ "
r ,
k
.~
~ III
I
0.5
0.2
" ....
1\
5 mE 0.1
0.05
.... J,.;y
0=0
0.02
0.01
0.005
10 °
"'"
2 5
10-3
10-6
O=f
10-5 10- 4 10-3
~
T
10-2 10-' 100 s
-I
-t -IC
Siemens 897.
SXT 3904
Small-signal current gain hi' = f([el Output admittance ho, = f(lel

VeE = 10 V, f = 1 MHz VeE = 10 V, f = 1 MHz
10 3 102
pS
II
5
-- :.-1-
5
/
I
---
-Ie
Delay time td = f(Iel Storage time t, = f(Iel

Rise time t, = f(Iel
103 103
ns ns
r--- f-
r- --td-=-= hFE =lO= r- 25°(
~\\l\
td. tr 5 f- ts 5
- - tr ~--125°(
r-
I ~\ ~~
~. r- --..::
hFE =
v
-~
20
10
r---
5 ,\. 5 hFE=2 O~
-\.\
\o[e=3,0 V-/-
,\, 1o F--
\' :\J JJIT~ II

\ ~ 15V' !
~ ~
I II
VSE=OV
2,OV
5 102 rnA
-ic
898 Siemens
SXT 3904
Fall time t f = f(lel Rise time t, = f(Iel
ns
==1=
- f-
.
--125°~
25°(
:::
.1, ,-
Vee = 40V_
'\. 5
I'
Vce =40V f!=
",
.-~
hFE =10
f--
1\ ~.
'~ 1250( ~ 25°(
hFE= 20 1=
'X'
5 1"'- ~ 5 ~
I~ 't- '\.
hFE=10
~ 1-- 1\ -'~
10
, t--
10
,
5 102 rnA
-Ie
DC current gain h" = f(lel

VeE = 1 V (standardized)
~ 25°( t'-.
-55°(
5 V
/
~
5 10' rnA 10 2
~
-Ie
Siemens 899
PNP Silicon Switching Transistor SXT 3906

E

SXT 3906 S2A upon request upon request SOT 89
Maximum ratings

TA = 25°C

Thermal resistance
Junction-ambient RthJA ::;; 125 K/W
Package mounted on
alumina
15 mm x 16.7 mm x 0.7 mm
900 Siemens
SXT 3906

Collector-emitter breakdown voltage VIBRICEO 40 - - V
Ie = 1 mA
Collector-base breakdown voltage VIBRICBO 40 - - V
Ie= 10 fJA
h = 10 fJA
Base cutoff current I BL - - 50 nA
VCE = 30 V, VBE = 3 V
Collector cutoff current IeEX - - 50 nA
VeE = 30 V, V BE = - 3 V ,
DC current gain hFE

Ie = 100 fJA. VCE = 1 V 60 - - -
Ie = 1 mA, VCE = 1 V 80 - - -
Ie = 10 mA. VeE = 1 V 100 - 300 -
Ie = 50 mA, VeE = 1 V 60 - - -
Ie = 100 mA, VeE = 1 V 30 - - -
Ie = 10 mA; I B = 1 mA - - 0.25 V
Ie= 50 mA; 18 = 5 mA - - 0.4 V
Base-emitter saturation voltage1) VB Esat
Ie= 10 mA; I B = 1 mA 0.65 - 0.85 V
Ie= 50 mA; Is = 5 mA - - 0.95 V
Siemens 901
SXT 3906

Ie = 10 rnA. VCE = 20 V, f= 100 MHz
Output capacitance Cabo - - 4.5 pF
VEB = 0.5 V, f= 1 MHz
Input impedance hie 2 - 12 kO
ICE = 1 rnA; VCE = 10V,f= 1 kHz
Voltage feedback ratio h,e 0.1 - 10 x 10-4
Ie = 1 rnA; VCE = 10 V, f = 1 kHz
Small-signal current gain hie 100 - 400 -
Ie= 1 rnA; VeE = 10 V, f = 1 kHz
Output admittance hoe 3 - 60 I-IS
Ie= 1 rnA; VCE = 10 V, f = 1 kHz
Ic = 0.1 rnA. VCE = 5 V, f= 10 Hz to 15 kHz,
Rs = 1 kO
Switching times td - - 35 ns
Vcc = 3 V, VBE = 0.5 V, Ie = 10 rnA, t, - - 35 ns
IB1 = 1 rnA
Vee = 3V,Ie= 10mA,IB1 = 1 rnA t, - - 75 ns
Test circuits
-3.0V <1.0 ns -3.0V

275Q 275Q .
<tOns
+--r_~:V().6v-[10=k:1Q-t--[ I
--1£
T<4.0pF 1J
-llO=2% I
_.J
902 Siemens
SXT 3906
Total power dissipation p.o. = f( TA) Saturation voltage Ie = f(VB"'" VeE ,,,I
W
1,2
V
,/
II
r
1,O
1\
f\
5
I
I
/
I
0,8 1/
f\
,\
0,6
1\ I 10
, ~h jVBE
0,4
r\
"- '\ 5 II
0,2
1\
o r\
o 50 100 150°C 0,2 0,4 0,6 0,8 V· 1,0
--~ - VeEsat'vCEsat
K Pulse handling capability r' h = f(t) Voltage feedback ratio h" = f(lel
Vi(standardized)
10° 10'
J..o!il
JIII
, ~. T
0.5
0.2
~ 'T- [..oj.-
0.1
5 0.05
0.02
r.- 0.01
10 °
0.005
0=0
2 5
,i I
5
II i
I
~
tp
O=r II '
10-3
T , I I1II
10-6 10-5 10- 4 10-3 10-2 10-' 10° s
-f -IC
Siemens 903
SXT 3906
Small-signal current gain h,. = f(Iel Output admittance ho, = f(le)

VCE = 10 V, f = 1 MHz VCE = 10 V, f = 1 MHz
103 102
)IS
1/
1/
/
/
- ~
5 5
II
5 rnA 10'
-Ie -Ie
Delay time t, = f (lel Fall time tf = f(lel

Rise time t, = f(le)
- - 25°(
~ ~
'\ ,
5 ~ ~ --125°( - Vee =40V
N I
. III
L hFE =20 .-
--
5 f--~-N-t-H\!It!'L.,,~l'ce =
\.
3,OV :=i
15V ~ 5
II V/'
~
"
;0..:
1\ 11'~ I I j) '-.. h FE =10 !~
... .;
t·./
~.~~ :::::..
10' §~~IV.~BE~=~OV~;>~~II~
2,OV
5
10° 5 10' 5 10 2 rnA 5 10' 5 102 rnA
-Ie ---Ie
904 Siemens
SXT 3906~
DC current gain h" = f(le!

VeE = 1 V (standardized)
Siemens 905
NPN Silicon High Voltage Transistors SXT A42
SXT A43

E

SXT A 42 SlD upon request upon request SOT 89
SXT A 43 SlE upon request upon request SOT 89
Maximum ratings
Parameter Symbol SXT A42 SXT A43 Unit

Collector-base voltage V CBO 300 200 V
Emitter-bas~ voltage VEBO 6 V
Total power dissipation P tot 1 W
TA = 25 DC

Storage temperature range T stg -65 ... +150 DC
Thermal resistance
Junction-ambient RthJA ::; 1 25 KjW
Package mounted on
alumina
15 mm X 16.7 mm X 0.7 mm
906 Siemens
SXT A42
SXT A43

Collector-emitter breakdown voltage V{BR)CEO
Ie = 1 rnA SXT A 42 300 - - V
SXT A43 200 - - V
Collector-base breakdown voltage V{BR)CBO
Ie= 100 IlA SXT A 42 300 - - V
SXT A 43 200 - - V
Emitter-base breakdown voltage V{BR)EBO 6 - - V
le = 100 IlA
VCB = 200V,le= 0 SXT A 42 - - 100 nA
VCB = 1 60 V. le = 0 SXT A 43 - - 100 nA
VcB =200V,lE=0. TA = 125°C SXT A 42 - - 10 Il A
VCB = 160V,lE=0. TA = 125°C SXT A 43 - - 10 Il A
VEB = 6 V. Ie = 0
DC current gain hFE
Ie = 1 rnA. VCE = 10 V 25 - - -
Ie = lOrnA. VCE = 10 V 40 - - -
Ie = 30 rnA. VeE = 10 V SXT A 42 40 - - -
SXT A 43 40 - - -
Ie = 20 rnA; I B = 2 rnA SXT A 42 - - 0.5 V
SXT A 43 - - 0.4 V
Ie= 20 rnA; IB = 2 rnA

Ie = 10 rnA. VCE = 20 V. f= 100 MHz
Output capacitance Cobo
VeB = 20 V. f = 1 MHz SXT A 42 - - 3 pF
SXT A 43 - - 4 pF
I) Pulse test: t:5 300 lis, D:5 2 %
Siemens 907
SXT A42
SXT A43
Total power dissipation P", = f(TA ) Transition frequency fT = f(lel

VeE = 10 V, f = 100 MHz
W MHz
1,2 103
5
1"1,0
I\.
0,8
f\ I.
1\
1\
0,6
I\. I
0,4
1\ 5
~
1\ \I
0,2
t\. V
o 1\
o 50 100 150°C 5 10' 5 10 3 rnA
-~
Pulse handling capability 'th = fIt) Operating range Ie = f(VeEQ)

K (standardized) TA = 25 °C, D = 0
'iii rnA
10° 10 3
~
5
r ,
I,..
~
, ~,I
0.5
0.2
I'
1\. r\
10~s
0.1 '\ 1111

5 0.05
~ 0.02 \~ 1001lS
10' 1rnsj
& 0.01
0.005 5 lOOms
1'0=0
2
SOOrns
DC
5 llr
10-3
10-6 10-5
o=~
'"
10-4
~ ;" r
10-3 10-2 10-' 10° s
-,
-f -VcEO
908 Siemens
SXT A42
SXT A43
Collector cutoff current le.o = f( TA ) Collector current le = f(VBE)

VeB = 160 V VeE = 10 V
nA rnA
104 10 3
5 5
max.•'" I
je 10 2
..-. 5
k' V
10'
typo 5
, 1/ , I
50 100 150 °C 0,5 1,0 1,5 V
-TA -VeE
DC current gain hFE = f(lol

VeE = 10 V
100 L...J....u.J..llUl.....L.L.J..U.1ill......J....l..J..llJ.I.II-.L..l.UilllJ
10-' 5 10° 5 10' 5 10 2 5 10 3rnA
-Ie
Siemens 909
PNP Silicon High-Voltage Transistors SXT A 92
SXT A 93

E

SXT A 92 S2D upon request upon request SOT 89
SXT A 93 S2E upon request upon request SOT 89
Maximum ratings
Parameter Symbol SXT A 92 SXT A93 Unit

Collector-base voltage V CBO 300 200 V
TA = 25°C
Thermal resistance
Junction-ambient RthJA :s; 125 K/W
Package mounted on
alumina
15 mm x 16.7 mm x 0.7 mm
910 Siemens
SXTA92
SXTA93

Ie = 1 rnA SXT A 92 300 - - V
SXT A 93 200 - - V
Ie = 100 IJA SXT A 92 300 - - V
SXT A 93 200 - - V
h=1001JA
VeB = 200V,IE=0 SXT A 92 - - 250 nA
VCB = 1 60 V, h = 0 SXT A 93 - - 250 nA
VeB = 200V,h =0, TA = 125°C SXT A 92 - - 20 IJA
VCB = 160V,h=O, TA = 25°C SXT A 93 - - 20 IJA
VEB = 4 V, Ie = 0
DC current gain hFE
Ic = 1 'rnA, VeE = 10 V 25 - - -
Ie = 10 rnA, VeE = 10 V 40 - - -
Ie = 30 rnA, VeE = 10 V SXT A 92 25 - - -
SXT A 93 25 - - -
Collector-emitter saturation voltage') VeE,at
Ie = 20 rnA; IB = 2 rnA SXT A 92 - - 0.5 V
SXT A 93 - - 0.4 V
Base-emitter saturation voltage') VBE,at - - 0.9 V
Ie = 20 rnA; IB = 2 rnA

Ie = 10 rnA, VeE = 20 V, f= 100 MHz
Output capacitance CObO
VeB = 20 V, f = 1 MHz SXT A 92 - - 6 pF
SXT A 93 - - 8 pF
1) Pulse test: t:5, 300 lis, D:5, 2 %
Siemens 911
SXT A 92
SXT A 93
Total power dissipation p.o. = f( TA) Transition frequency fT = f(Id

VeE = 20 V, f= 100 MHz
r
1,2
1,O
I\.
0,8 1\
\
\
0,6
1\ I
0,4 1\ 5
1\ v
\
0,2 2 /
l
o 1\
o 50 100 150 0(
-~
Pulse handling capability r'h = fIt) Operating range Ie = f(VeEO)

K (standardized) TA = 25 0 C, D = 0
W
10°
5
5
~
r
\
1
p
kl
, ~. III
II I
0.5
I' 1\
lOps
0.2 '\'
0.1
5 0.05
0.02 ~ 1\ 100 ps
1msj
0.01
0.005 5 lOOms
t'O=O III
2
L' 500
DC
msl
5
10-3
10-6 10-5
O=f
10- 4
~ 10-3
T
10- 2 10- 1 10° s

1
----t
912 Siemens
SXT A92
SXTA93
Collector cutoff current leBo = f( TA) Collector current Ie = f(VBE)

VeB = 160 V VeE = 10 V
ma~:.-17 II
1/ 17
typo
10°
5
1 1.1 1 I
so 100 1SO °c 0,5 1,5 V
-~
DC current gain hFE = f(le)

VcE =10V
1:3§1111(11~11
rZH--l+I-UllI-----l-1--I-l1llIl--!-++I-I+llI--+-I-+I+Hl
:2 _ _
100
10- 10° 10 10 10
Ll...lJJWJJJ.---.LLllJUllL-Ll..l.U.JWL..LLillJJJJ
1 5 5 1 5 2
-Ie
5 3 mA
Siemens 913
GaAs FETs GaAs-FET
Siemens 915
GaAs FET CF739
• N-channel dual-gate GaAs MES FET
~D
• Depletion mode transistor for tuned small-signal
applications up to 2 GHz, e. g. VHF, UHF, Sat-TV
tuners
G2
• Low noise
• High gain
• Low input capacitance
G1 ~S
(tape and reel)
CF739 MS Q 62702 - F1215 SOT-143
Maximum Ratings
Gate 1-source voltage -VG1S 6 V
Gate 2-source voltage -VG2S 6 V
Drain current lD 80 mA
Gate 1-source peak current +lG1SM 1 mA
Gate 2-source peak current +lG2SM 1 mA
Total power dissipation, TA:s 42 °C2 ) Ptot 240 mW
Channel temperature Tch 150 °c
Storage temperature range TSl9 -55 ... +125 °c
Thermal Resistance
Junction - ambient 1) IRthJA I :s450 KJW
Siemens 917
CF739
DC characteristics
Values
Parameter Symbol min typ max Unit
Drain-source breakdown voltage Ii(BR)OS 10 - - V
10 = 100 J.LA, -VG1S = -VG2S = 4 V
Gate 1 leakage current -IG1sS - - 20 J.LA
-VG1S = 5\/, VG2S = Vos=O
Gate 2 leakage current -IG2sS - - 20 J.LA
-VG2S = 5 \/, VG1S = Vos = 0
VG1S = 0, VG2S = 0, Vos = 3 V
Gate 1-source pinch-off voltage -VG1S (P) - - 4.5 V
VG2S = 0, Vos = 5 \/, 10 = 200 J.LA
Gate 2-source pinch-off voltage -VG2S(P) - - 4.5 V
VG1S = 0, Vos = 5 \/, 10 = 200 J.LA
AC characteristics
Forward transconductance flts - 25 - rnS
Vos = 5 \/, VG2S = 2 V, 10 = 10 rnA, f= 1 kHz
Gate 1 input capacitance Cg1ss - 0.95 - pF
VG2s =2V, Vos=5V,Io= 10 rnA, f=1 MHz
Output capacitance Cdss - 0.5 - pF
VG2S = 2 V, Vos = 5 V, 10= 10 mA, f= 1 MHz
VG2S = 2 V, Vos = 5 \/, 10 = 10 rnA, f= 1.75 GHz
Power gain Gps - 17 - dB
VG2S =2V, Vos = 5 \/, 10 = 10 rnA, f= 1.75 GHz
918 Siemens
CF739
Total power dissipation Ptot = f (T,.] Output characteristics Io = f (Vos)

package mounted on alumina VG2S = 2 V
mW rnA
300 50
VG1S =OV
1111
1\
40 i+H+ -I I
1\ O.2SV
1\
30
II
-O.SOV
20
100 - I I
-0.7SV
1\
10
-1.0V
o o
o 50 100 o 2 4 6 BV
~
- - - - I.. TA ----I-~VDS

91., = f (Vl;1S) 9ts1 = f (VG2s)
rnS Vas = 5 V, f= 1 kHz mS Vas = 5 V, f= 1 kHz
50 I I I I 50
l-
I- VG2S =2.0 Vi~ ~J-- 1-1-
1..
1-1---
f1
O.25V t1 ~1S=OV
T
II
- 30 I
30 1-, ,
O.SV 1---1--- r- ,--\- -.

l/o1'sv
20 20
10 OV +---1- I- 10
'I..
I~
-10V" ~-O.5V"""
1-1-
w
141 ~
o o
-2 -1 o 1V -2 -1 2V
Siemens 919
CF739
Drain current Io =f (VG1S) Drain current Io =f (VG2S)

Vos=5V Vos=5V
rnA rnA
80 80
TT 1 , .11
f- VG1S =O..5V li
Ib= 2V 'r/- f-
If
60 IT 'i
7 60
w- 1/
I OV,...F
40 I-'
} 40
II} ov- if
,I. 1,.-10-
III -o.SV
20 20
1-1'
II. I~ I
III
~ -1V_ -1.0V
I
o o
-2 -1 1V -2 -1 2V
Gate 1 input capacitance Cg1 •• f IIo) = Output capacitance CdS" = f (Vos)

VG2S = 2 \I, Vos=5 \I, f=0.1 -1 GHz VG2S =2 V, 10= 10 rnA, f= 0.1 -1 GHz
pF pF
1.5 3
[g1 •• l--
)...
\
,
I 1.0
V 2
17
0,5
\
\
I\....
o
o
o
10 20 30 rnA o 2 4 6 8 10V
- -........ 10
920 Siemens
CF739
Common Source Admittance Parameters, G2 RF grounded
Gate 1 input admittance Yl1s Gate 1 forward transfer admittance Y21s

Vos = 5 V, VG2S = 2 V;Io = 10 rnA Vos= 5V, VG2s =2V, 10= 10 rnA
mS mS
14
f=2000MHz IP
o
f=100 MHz
1BOOMHz,..,V 200 MHz
12 TT-:;pr I I I I I
400MHz
160~MI'%r I I I I I
10 600MHz
!A'1400MHz
BOOMHz
8'1200MHz
B
. IT l~OIO~~z
l-
IP l~O~MHz -20
6 1F~0~Hz
I) 800MHz
1406 ~~z I II
4 600JHz 111.1 1/
~ I I I -30 1600MHz If
«400MHz
2 lBO~~82:
200M Hz
o
100MHz
-40
200~~~zl tf
o 2 3 4 5 6 B mS o 10 20 30 40 mS
-g"s

Vos = 5 V, VG2S = 2 V.Io= 10 rnA
mS
7
mmDI
fl=m~7~z
6
~
5
" " III
1600MHz
1400MHz
4
l;m~~~
I11II1
3 1000MHz
I I r " I
BOOMHz
2
600MHz
400MHz
1200 MHz
T100MHz
o
o 0.1 0.2 OJ 0.4 0.5 mS
- - - - - <..
- gl2<
Siemens 921
CF739
Common Source S Parameters, G2 RF grounded
s" =
f (f), Z-plane S,2=f(f}
Vos =5 \I, VG2s=2\1, 10= 10 rnA, Zo= son Vos = 5 V, VG2S =2\1, 10 = 10 rnA, Zo= 50 n
180 0 1--I--I--I--I...ll,!-4.'~- o
-j50 -90 0
5.2, =f (f) 5.z2 =f (f), Z-plane

Vos =5\1, VG2S =2 V,lo = 10 rnA, Zo = son Vos = 5 \I, VG2S= 2\1, 10= 10 rnA, Zo= son
90 0
180 0
-900 -j 50
922 Siemens
GaAs FET CFY30
• Low noise (Fmin = 1.4 dB at 4 GHz)
S~D
• High gain (11.5 dB typo at 4 GHz)
• For oscillators up to 12 GHz
• For amplifiers up to 6 GHz
•
•
•
Ion-implanted planar structure
Chip all gold metallization
Chip nitride passivation
G~s
(tape and reel)
CFY30 A2 Q 62703-F97 SOT-143
Maximum Ratings
Drain voltage Vos 5 V
Drain-gate voltage VOG 7 V
Gate-source voltage VGS -4 ... +0.5 V
Total power dissipation, Tc :::::90 DC Ptot 250 mW
Thermal Resistance
Channel - case I RthchC :::::240 K/W
Siemens 923
CFY30
at TA = 25°C.
min typ max
Drain-source saturation current loss 20 50 80 mA
Vos = 3.5 V, VGS = 0
Pinch-off voltage Vp -0.5 -1.3 -4.0 V
10 = 1 mA, Vos =3.5 V
Transconductance gm 20 30 - mS
10 = 15 mA, Vos = 3.5 V
Gate leakage current IG - 0.1 2.0 !LA
10 = 15 mA, Vos = 3.5 V
Noise figure F dB
10 = 15 mA, Vos = 3.5 V, f= 4 GHz - 1.4 1.6
f=6GHz - 2.0 -
Associated gain Ga dB
10 = 15 mA, Vos = 3.5 V, f= 4 GHz 10 11.5 -
f=6GHz - 8.9 -
Maximum available gain MAG - 11.2 - dB
10 = 15 mA, Vos = 3.5 V, f= 6 GHz
Maximum stable gain MSG - 14.4 - dB
fo = 15 mA, Vos = 3.5 V, f= 4 GHz
Power output at 1 dB compression PldB - 16 - dBm
10 = 30 mA, Vos =4 V, f=6 GHz
Common Source Noise Parameters

10 = 15 mA, Vos = 3.5 V, Zo = 50 Q
f F min Ga r opt RN N FSOfl G(FSOfl)
GHz dB dB MAG ANG Q - dB dB

2 1.0 15.5 0.72 27 49 0.17 2.9 10.0
4 1.4 11.5 0.64 61 29 0.17 2.7 9.3
6 2.0 8.9 0.46 101 19 0.30 2.8 7.5
8 2.5 7.1 0.31 153 9 0.31 2.8 6.4
10 3.0 5.8 0.34 -133 14 0.38 3.4 4.2
12 3.5 5.0 0.41 - 93 28 0.42 4.1 2.9
924 Siemens
CFY30
Source impedance for min. noise figure

ID=15mA, VDs =3.5V
+j25
Of----
-j25
-j50
Circles of constant noise figure Circles of constant noise figure

ID = 15 mA, VDS = 3.5 V, f= 4 GHz ID = 15 mA, VDS = 3.5 V, f= 6 GHz
+j50 +j50
of---__\_-\
-j50 -j50
Siemens 925
CFY30
Characteristics at TA = 25°C
mA
Output characteristics 10 =f (Vos)
50
VGS .. OV - f---
/
1 -0.2V
:;;;;;
7 -0.4V- f-
30
c;;;;o
7
~ f-
c;;;:;;
20 1/
_-....
-0.8V f-
17
1/
I..--' - ~-
10
-~
l.- I--
]:...;... I - -1.1ii
2 4 5 V
-Vos
Minimum noise figure Fmin f (f) = Minimum noise figure Fmin = f (10)
Associated gain Ga = f (f) Associated gain G. = f (10 )
10 = 15 rnA, Vos = 3.5 V. ZSopt dB Vos = 3.5 V. ZSopt dB
dB dB
9
1 II 18 7 I,...."
1."...-...,..--,...,1...11
. . . . - - - r - T. . . 1'TTl 14
\:
1 11
-Fmin
--{j.
16
14
{j. Fmin - Pmin
6 1 - - - - (j.++1+f+-/---+C~4IGI~1
F=III
12 !
(j"
0;
1\
t t 5
_I- 6GHz
I II 10
6 12
\
5 10
r.
4 8
3
1/ 6
1""
2 4
V 2
01 o OL--L-LLLLLJJ.l.---L-L.L.LJ..J..LLJ
2 4 6 8 10 20 GHz 1 2
-f
926 Siemens
CFY30
Common Source S Parameters

ID = 15 mA, VDS = 3.5 V, Zo = 50 Q
f S11 Sz1 S12 Sz2

0.1 1.00 - 1 2.43 178 0.003 87 0.70 - 1
0.2 1.00 - 3 2.43 176 0.005 86 0.70 - 3
0.4 1.00 - 6 2.43 171 0.010 23 0.69 - 5
0.6 1.00 - 10 2.43 167 0.015 81 0.69 - 8
0.8 0.99 - 14 2.43 162 0.020 78 0.68 - 11
1.0 0.99 - 17 2.43 158 0.025 75 0.68 - 13
1.2 0.98 - 21 2.43 154 0.030 72 0.67 - 15
1.4 0.98 - 25 2.44 150 0.035 69 0.67 - 18
1.6 0.97 - 28 2.44 145 0.040 66 0.66 - 20
1.8 0.97 - 32 2.45 141 0.045 63 0.66 - 23
2.0 0.96 - 36 2.45 137 0.050 60 0.65 - 26
2.2 0.95 - 38 2.46 133 0.054 58 0.64 - 28
2.4 0.93 - 44 2.47 129 0.058 55 0.64 - 30
2.6 0.92 - 49 2.48 124 0.062 53 0.63 - 32
2.8 0.90 - 53 2.49 120 0.066 50 0.62 - 35
3.0 0.88 - 58 2.50 116 0.070 48 0.61 - 38
3.2 0.87 - 62 2.50 111 0.074 45 0.60 - 41
3.4 0.85 - 67 2.50 107 0.078 42 0.59 - 44
3.6 0.83 - 72 2.50 102 0.082 39 0.57 - 47
3.8 0.82 -77 2.50 98 0.086 36 0.55 - 51
4.0 0.80 - 82 2.50 93 0.090 32 0.54 - 54
4.2 0.79 - 87 2.50 88 0.094 29 0.52 - 58
4.4 0.77 - 92 2.51 83 0.097 25 0.50 - 61
4.6 0.76 - 98 2.50 78 0.100 22 0.48 - 64
4.8 0.74 -104 2.49 73 0.103 18 0.46 - 67
5.0 0.72 -110 2.47 68 0.106 15 0.45 - 70
5.2 0.70 -115 2.45 64 0.108 12 0.43 - 73
5.4 0.68 -121 2.43 59 0.110 9 0.42 - 76
5.6 0.66 -127 2.41 54 0.112 6 0.40 - 80
5.8 0.65 -133 2.39 50 0.113 3 0.38 - 84
6.0 0.63 -139 2.36 45 0.114 0 0.36 - 88
6.2 0.62 -144 2.33 41 0.114 - 3 0.33 - 93
6.4 0.60 -150 2.30 37 0.115 - 6 0.31 - 98
6.6 0.59 -156 2.27 32 0.115 - 9 0.29 -104
6.8 0.57 -162 2.24 27 0.116 -11 0.27 -110
7.0 0.56 -168 2.21 22 0.116 -14 0.25 -116
7.2 0.55 -174 2.19 17 0.116 -17 0.24 -122
7.4 0.54 179 2.16 12 0.116 -20 0.23 -129
7.6 0.54 172 2.14 8 0.116 -22 0.21 -137
7.8 0.53 166 2.11 3 0.116 -25 0.20 -145
8.0 0.53 160 2.08 - 2 0.115 -27 0.19 -154
8.2 0.54 153 2.04 - 7 0.114 -30 0.18 -163
8.4 0.54 147 2.00 -11 0.113 -32 0.18 ~173
8.6 0.55 141 1.96 -16 0.112 -34 0.17 179
8.8 0.55 135 1.92 -21 0.111 -37 0.18 171
Siemens 927
CFY30
10 = 15 rnA, Vos = 3.5 V, Zo = 50 n

f S.1 &.!1 8 12 &.!2
9.0 0.55 129 1.88 -25 0.110 -39 0.18 163
9.2 0.56 124 1.83 -30 0.109 -42 0.19 155
9.4 0.56 119 1.78 -35 0.108 -44 0.20 148
9.6 0.57 114 1.72 -40 0.107 -46 0.21 141
9.8 0.57 110 1.66 -44 0.105 -48 0.22 134
10.0 0.58 106 1.61 -48 0.104 -50 0.23 128
10.2 0.58 102 1.56 -52 0.103 -51 0.25 123
10.4 0.59 98 1.51 -56 0.102 -53 0.26 118
10.6 0.59 94 1.46 -59 0.101 -54 0.28 113
10.8 0.60 91 1.42 -62 0.101 -56 0.29 108
11.0 0.60 88 1.38 -65 0.100 -57 0.30 104
11.2 0.61 85 1.35 -69 0.099 -58 0.32 100
11.4 0.61 82 1.32 -72 0.099 59 0.33 96
11.6 0.62 79 1.30 -75 0.098 -60 0.34 93
11.8 0.62 77 1.27 -78 0.097 -62 0.35 89
12.0 0.62 74 1.25 -81 0.096 -63 0.36 85
928 Siemens
CFY30
10 = 15 rnA, Vos = 3.5 V. 20= 50 n
St1 "f (f)

90 0
5.!1 "f (f) ~"f(f)
-90 0
Siemens 929
CFY30
Common Source S Parameters

JD = 30 rnA, VDS = 3.5 V. Zo = 50 Q
f 5 11 ~1 5 12 ~2
0.1 1.00 - 2 3.23 178 0.002 85 0.71 - 1
0.2 1.00 - 4 3.22 176 0.004 82 0.71 - 3
0.4 1.00 - 8 3.21 171 0.009 79 0.70 - 6
0.6 0.99 - 12 3.20 167 0.013 76 0.69 - 9
0.8 0.99 - 16 3.19 162 0.017 73 0.69 - 11
1.0 0.98 - 20 3.18 157 0.021 73 0.68 - 14
1.2 0.97 - 24 3.18 153 0.025 70 0.67 - 16
1.4 0.96 - 28 3.18 148 0.030 67 0.67 - 19
1.6 0.95 - 32 3.17 143 0.034 65 0.66 - 21
1.8 0.94 - 38 3.17 139 0.038 63 0.66 - 24
2.0 0.92 - 40 3.17 135 0.042 61 0.65 - 26
2.2 0.91 - 44 3.17 131 0.046 58 0.64 - 28
2.4 0.90 - 48 3.17 127 0.051 56 0.63 - 31
2.6 0.89 - 53 3.17 123 0.055 53 0.62 - 33
2.8 0.87 - 58 3.17 119 0.059 50 0.61 - 36
3.0 0.85 - 63 3.17 114 0.063 48 0.60 - 39
3.2 0.83 - 68 3.16 109 0.067 45 0.58 - 42
3.4 0.81 - 73 3.14 104 0.070 42 0.56 ...: 45
3.6 0.79 - 79 3.12 99 0.073 40 0.55 - 48
3.8 0.77 - 85 3.10 94 0.076 37 0.54 - 51
4.0 0.75 - 91 3.08 88 0.079 34 0.52 - 54
4.2 0.73 - 96 3.06 83 0.082 31 0.51 - 57
4.4 0.71 -102 3.04 78 0.084 28 0.50 '- 60
4.6 0.69 -108 3.02 73 0.087 24 0.48 - 63
4.8 0.67 -114 3.00 68 0.089 21 0.47 - 66
5.0 0.65 -120 2.98 63 0.091 18 0.45 - 70
5.2 0.63 -126 2.95 58 0.092 15 0.43 - 73
5.4 0.62 -132 2.91 54 0.093 12 0.41 -77
5.6 0.60 -138 2.87 49 0.094 10 0.38 - 81
5.8 0.59 -144 2.82 44 0.095 7 0.36 - 85
6.0 0.57 -150 2.77 40 0.096 4 0.34 - 89
6.2 0.56 -156 2.73 35 0.097 2 0.32 - 94
6.4 0.54 -162 2.68 31 0.097 - 1 0.30 - 99
6.6 0.53 -168 2.63 27 0.098 -4 0.29 -104
6.8 0.52 -174 2.58 22 0.098 - 6 0.27 -109
7.0 0.51 179 2.54 18 0.099 - 9 0.26 -115
7.2 0.51 173 2.50 14 0.099 -11 0.24 -121
7.4 0.51 166 2.46 9 0.099 -13 0.22 -127
7.6 0.50 160 2.43 5 0.099 -16 0.21 -134
7.8 0.50 153 2.40 0 0.099 -18 0.19 -141
8.0 0.50 147 2.36 - 4 0.099 -20 0.18 -148
8.2 0.51 141 2.31 - 8 0.099 -22 0.17 -156
8.4 0.51 135 2.26 -13 0.099 -24 0.16 -164
8.6 0.52 130 2.21 -17 0.099 -27 0.16 -174
8.8 0.52 125 2.15 -22 0.099 -29 0.16 176
930 Siemens
CFY30
10 = 30 mA, Vos = 3.5 V, 4J = 50 .Q

f 8 11 ~1 8 12 ~2
9.0 0.53 120 2.09 -26 0.099 -31 0.16 167
9.2 0.54 115 2.04 -30 0.099 -33 0.17 158
9.4 0.55 111 1.98 -35 0.099 -35 0.18 150
9.6 0.55 107 1.93 -39 0.099 -37 0.19 142
9.8 0.56 103 1.87 -43 0.099 -39 0.21 135
10.0 0.57 99 1.82 -47 0.099 -41 0.22 128
10.2 0.58 95 1.76 -51 0.100 -42 0.23 123
10.4 0.59 91 1.71 -54 0.100 -44 0.25 118
10.6 0.60 88 1.65 -58 0.100 -45 0.26 114
10.8 0.60 85 1.60 -62 0.101 -47 0.27 109
11.0 0.61 82 1.55 -65 0.101 -48 0.29 104
11.2 0.61 79 1.51 -69 0.102 -49 0.30 100
11.4 0.61 76 1.47 -72 0.102 -51 0.31 96
11.6 0.62 73 1.44 -75 0.103 -52 0.32 92
11.8 0.62 71 1.41 -78 0.103 -53 0.33 89
12.0 0.62 68 1.38 -82 0.104 -55 0.34 85
Siemens 931
CFY30
10 = 30 mA, Vos = 3.5 V, Zo = 50 Q
5" =f(f) 5'2=f(f)

90° 90°
4
1BOo I---f--I-+-+-:--f--+-I--+-f-':';:"'--l 00 1BOo f--Lf--f--+-:--f--+---if---t--lt-;;--t---I 0°
-900 -90°
1BOO I---+-l--+-t--I---"'t=--'II-'-t--'-'F----j 0° 1BOo I---+-l--t---t+--+-l--r-h-r----j 0°
- 90°
932 Siemens
GaAs MMICs GaAs-MMIC
Siemens 933
GaAs MMIC CGY50
• Single-stage, monolithic microwave IC (MMIC amplifier)

•
•
•
Cascadable 50 n gain block
Application range: 100 MHz to 3 GHz
Third order intercept point 30 dBm typical at 1.8 GHz
317~2
•
•
•
Gain: 8.5 dB typical at 1.8 GHz
Low noise figure: 3.0 dB typical at 1.8 GHz
Gain control dynamic range 20 dB
4!Ig/;J 1
• Ion-implanted planar structure

• Chip all gold metallization
• Chip nitride passivation
Type Marking Ordering code Circuit diagram Package

CGY50 G2 Q 68000 - A8370 2 SOT-143
"
II
...r-1..
~
lOUT! D)
4
(IN!G)
)
I-
ty~kQ
~
1.3
(5)
Maximum Ratings
Drain voltage (DC) Vo 5.5 V
Peak drain voltage (DC + RF) Vop 7.5 V
Current control gate voltage VG -3 ... 0 V
Drain gate voltage VOG 7.5 V
Input power . PIN 16 dBm
Total power dissipation, Tc:51 00 °C Ptot 400 mW
Thermal Resistance
Channel- case I) I RthchC I :5125 IKIW
Note: exceeding any of the maximum ratings may cause permanent damage to the device. Appropriate handling is required to
protect the electrostatic-sensitive MMIC against degradation due to excess voltage or excess current spikes. Proper ground
connection of leads 1 and 3 (with minimum inductance) is required to achieve the guaranteed RF performance, stable operating
conditions and adequate cooling.
I) For application circuit see page 937.
Siemens 935
CGY50
DC Characteristics
at TA = 25°C, VG = 0 V, VD = 4.5 V, Rs = RL = 50 n, unless otherwise specified,
(for application circuit see next page).
min typ max
Drain current ID - 60 80 mA
Power gain G dB
f= 200 MHz - 10.0 -
f= 1800 MHz 7.5 8.5 -
Gain flatness L1G dB
f= 200 to 1000 MHz - 0.4 -
f= 800 to 1800 MHz - 1.1 2
Noise figure F - 3.0 4.0 dB
f= 200 to 1800 MHz
Input return loss RLJN 9.5 12 - dB
f= 200 to 1800 MHz
Output return loss RLouT 9.5 12 - dB
f= 200 to 1800 MHz
Third order intercept point, IP3 29 31 - dBm
f, = 806 MHz, f2 = 810 MHz,
Po = 10 dBm (both carriers)
1 dB gain compression P'dB - 16 - dBm
f= 200 to 1800 MHz
Gain control dynamic range L1G - 20 - dB
f= 200 to 1800 MHz
936 Siemens
CGY50
Application Circuit
f= 800 to 1800 MHz
r------------------,
~ ~ I
VG1 H H VD
I I
I 0, I
I L, L2 I
I I
'••"' soo 1: '--___________________ J
!i'"'."' soo
~ SOQ Microstripline
Summary of components
c1 , ~ Chip capacitors 100 pF
Cs, C4 Chip capacitors 1 nF
L1 , L2 Discrete inductor 1 f.lH or printed microstripline inductor
Dl Z diode 5.6 V (type BZW 22 C5V6)
Note: Operating conditions for AN max: RG = RL = 50 11. C, max = 220 pF, Vo = 4.5 V; VG current limited <2 rnA.
Siemens 937
CGY50
Total power dissipation Ptot =f (Tel
0.5
~ot W
t 0.4
i\
\
0.3
:\
0.2
\
0.1 1\
o
1\
o 50 100 O( 150
-7(
Drain currentlo = f (Vo) Drain current 10 = f (VG)

VG=OV Vo=4.5 V
100 100
1
60
V
..--I--- - 60
~~~
i~
40 I 40
~~~~
I
~~ ~~Y'
20 20
I~ ~~ ~1'
~§ ~~ ~~
o o ~~ §~ ~;>:>
o 2 4 6 V 8 -1.5 -1.0 -0.5 V 0
-VG
938 Siemens
CGY50
Noise figure F =f (f) Noise figure F=f(VG)1)

Vo = 4.5 V. VG = 0 V. Rs = RL = 50 n Vo = 4.5 V. Rs = RL = 50 n
f= 200 to 1800 MHz
-10
10 20 30 40 mA 60
I I I I I I
10 10
F dB
t 8
\
6
\
6
\
max \
-
,;',;'
4 ,. 4
"', r--..
... .........
-'
typo
2 2
2 3 GHz 4 " ~1.0 -0.8 -0.6 -0.4 -0.2 V 0

-f
1) See next page.
Siemens 939
CGY50
Power gain G= f (f) Power gain G=f(Poutl

Vo=4.5 V. VG = 0 V. Rs= RL = 50 n Vo = 4.5 V. VG = 0 V. Rs = RL = 50 n
(=800 MHz
12 12
dB dB
G 10
r-..... ......... '\
t f'. typo
~
8
min
..... , 8
\
6
" t', 6
4 4
2 2
2 36Hz 4 10 dB 20
-f --Pout
Power gain G f (VG)') = Power gain G=f(VG)')
VO = 4.5 V. Rs = RL = 50 n Vo = 4.5 V, Rs = RL = 50 n
-10 -10
o 1 3 20 mA60 3 10 20 30 40 mA 60
I I I I I I I I I I I I I
15 12
dB dB
f =0.2 6Hz,,-
-
6 10 6 10 - 0.8 6Hz~ -:: .....:
"-
t 5
J~ t 8
-
_
1.8 6Hz.",,-
4.0 6Hz
"'. ~r -'
jf=0.26Hz I Ij
r/.,;' IX ./'
I I b ./
-5
o
1
I
1l B6HZ I
1.66Hz
;4.0 6Hz
I I I I
6
4
A'/,
!IJ
JlI ./
"-
....... ......
/~ 0/
-10
/ 2
II
-15
,,~
, o
,J
-20 -2
I J
-25 -4
-3 -2 -1 v 0 -1.0 -0.8 -0.6 -0.4 -0.2 V 0
1) The gate voltage VG refers to a typical drain current loss of 60 rnA with the supplementaoy information of the 10 values.
940 Siemens
CGY50
Third order intercept point 1P3 = f (Vol

f= 800 MHz, VG = a V. Rs = RL = 50 n
34
r:
dB
V --
26 V
26 I
24 The intermodulation ratio d,M can easily be
I determined.
d,M = 2 (IP3 - Po)
22 I J
II IP3
diM
= Intercept point
= Intermodulation ratio
Po = Power level of each carrier in dBm
2 3 4 5 V 6
Siemens 941
CGY50
S Parameters
Vo = 4.5 V, VG = 0 v, Zo = 50 Q
f 8 11 5.!1 ~2 5.!2
0.2 0.25 - 31 3.30 164 0.14 5.0 0.05 -144
0.4 0.27 - 34 3.20 158 0.14 0.0 0.05 -133
0.6 0.21 - 44 3.17 150 0.13 -2.0 0.08 105
0.8 0.20 - 54 3.09 142 0.13 -3.0 0.01 91
1.0 0.19 - 65 3.00 134 0.13 -4.0 0.12 81
1.2 0.18 - 77 2.90 126 0.13 -5.0 0.14 74
1.4 0.18 - 93 2.81 118 0.13 -5.0 0.16 68
1.6 0.17 -103 2.70 111 0.13 -6.0 0.17 62
1.8 0.17 -119 2.60 103 0.13 -5.0 0.18 56
2.0 0.17 -130 2.50 96 0.12 -5.0 0.19 51
2.2 0.18 -141 2.42 94 0.12 '-4.0 0.20 46
2.4 0.18 -152 2.33 83 0.12 -4.0 0.21 42
2.6 0.19 -163 2.24 77 0.12 -3.0 0.21 39
2.8 0.20 -172 2.16 71 0.13 -3.0 0.21 36
3.0 0.21 179 2.07 65 0.13 -2.0 0.21 33
3.2 0.22 172 2.01 60 0.13 -2.0 0.21 30
3.4 0.23 162 1.94 54 0.13 -2.0 0.21 29
3.6 0.24 153 1.87 49 0.14 -1.0 0.21 28
3.8 0.26 148 1.81 43 0.14 -1.0 0.21 27
4.0 0.28 142 1.75 38 0.15 -1.0 0.20 27
942 Siemens
CGY50
S Parameters
VD = 4.5 V, VG = 0 V, Zo = 50 n
~, ~2
~. ~
8:.,
90·
180· 1---+--+----+-+--+-+----+-+----+---1 0 180· I---f--+----+-+----tl--+--+-+---l.----l 0
-90· -90·
Siemens 943
Sensors
Siemens 945
Position Sensor KSY13
GaAs Hall Sensor

• For digital speed and position measurement
• High sensitivity and operating temperature -CGNDi1j Hall
Voltage
• Low offset voltage
• Low TC of sensitivity and internal resistance Hall
Voltage +V

o KSY 13 S13 Q62705-K 142 SOT 143
Maximum ratings
Control current 11max 7 mA
Operating temperature TA -40···+150 °C
range
Thermal resistance Rth "" 375 K/W

package mounted
on alumina
15 mm x 16.7 mm x 0.7 mm
o Preferred type
Siemens 947
KSY13
Characteristics Symbol Ratings Unit

Rated control current I1N 5 mA
Open-circuit Hall voltage V20 95···145 mV
hN=5mA,B=0,1T
Ohmic offset voltage ') VRO :5 ±30 mV
11N = 5 mA, B = 0
Internal resistance
at the control side Rl0 900 ···1200 n
at the Hall side R20 900.··1200 n
Temperature coefficient of V20 TCV20 ~ -0,05 %/K
hN = 5 mA, B = 0,2 T
Temperature coefficient of Rl0, R20 TCR10fR20 ~0,08 O/o/K
11 = 1 mA, B = 0,2 T
Open-circuit Hall voltage Max. control current 11 = f ( TA)

V20(TA) = f(TA)
V20(25 'C)
mA
1.2 r-.,.-,--,-....-.--r--r---,,.-,--, 8
V20(TA)
V20(25 'C) I--+-+--t---+-+-+--t---lf-t--f
I 1.0 1-1r-IIT'f::i:::~::j::j \
0.8 I--+-+-+--+-+-+--t-f-t--f 4
0.6 f-f-t-t--t--+-++--+-+---1 2
0,4 1.--'---'----'-----'---'----'---'---'_'--' o
-40 o 40 80 120 160 0( -40 o 40 80 120 160 0(
-JA
') Grouping upon request.
948 Siemens
Temperature Sensors KTY13
NPN silicon planar epitaxial sensors

•
•
•
Suitable for measuring, controlling and regulating air,
non-aggressive gases and liquids
To be used as element for temperature compensation
High reliability due to multilayer gold contacts
Subst.
(J Elec.
Contact
Elec.
Contact
Type Marking Package

[lKTY13A TA Q62705-K13 SOT 23
KTY 13 B TB Q62705-K14
KTY 13 C TC Q62705-K15
KTY 13 D TD Q62705-K16
Maximum ratings
Max. DC control current I 3 rnA
Peak current i 7 mA
t= 10 ms
Ambient temperature range TA -50 .. · + 150 °C
Symbol min typ max Unit
Basic resistance ') R25
IN = 1 mA KTY 13 A 1980 2000 2020 0
KTY 13 B 1960 2000 2040 0
KTY 13 C 1900 2000 2100 0
KTY 13 D 1800 2000 2200 0
Tolerance of basic resistance R25 R25·!ol
R25 = 20000, IN = 1 mA KTY 13 A - ± 1 - a/a
KTY 13 B - ± 2 - 0/0
KTY 13 C - ± 5 - a/a
KTY 13 D - ±10 - a/a
Resistance unbalance M
at polarity change
IN = 3 mA - ::; 0,3 - a/a
IN = 1 mA - ::; 0,1 - 0/0
Thermal time constant 630/0 value
in still medium
in air TAir - 7 - s
in oil TOil - 1 - s
') An operating current of 0.1 mA is recommended for precision measurements, as the inherent temperature
rise is negligible and the unbalance decreases.
[I Preferred type
Siemens 949
KTY13
Limited charging current Temperature coefficient

versus ambient temperature j = '( TA) versus ambient temperature a. = '( TA)
Parameter: air, t s 10 ms
mA
10
I 1 dR
a a=-x-
Rr dT
t
8
i 1,0
6 i\ "-['..
\. ....... ~
4
2
'\
\
1\
0,5
r-.....
- r-....
o o
-50 o so 100 150 0 ( -50 o 50 100 150 ·C
Sensor resistance
R25 = '(IN)
dR
Sensor resistance RT =, (l N)
TA = 25 ... 100°C, IN = 1 mA
n %
2200 20
dR
RZ5 Rr
i 2100
II
II
10
/
v
l/ ..... 1-'"
V ~
,,- fo-'i"""
2000 o
1-1-1- r-
1900 -10
o 3 rnA o 3 rnA
-IN -IN
950 Siemens
KTY13
Analytic expression of the regression parabola for the median tempera-

ture factor (l N = 1 mAl
kT = RRT = [1 + a,(L'lT) + ~(L'lT)'l

25
Analytic expression for calculating the sensor temperature
T(OC) = 25 + fa,' - 4~ ~;~ . kT -a,
a, = 7,64 . 10- 3 (K-')

~ = 1,66 . 10- 5 (K-')
R25 = resistance value at TA = 25°C (e. g. 2000 0)
RT = resistance value at temperature T (OC)
TA = ambient temperature
L'l T = temperature difference between T25 and T
T = temperature ~ sensor package temperature ~ ambient temperature
Tolerance of the temperature factor
Temperature T Temperature factor kT
+150°C 2,214
+125°C 1,93
+100°C 1,666
+ 75°C 1,423
+ 50°C 1,201
+ 25°C 1,000
O°C 0,819
- 25°C 0,659
- 50°C 0,52
Siemens 951
KTY13
Sensor resistance Temperature lactor

RT= ((TAl
IN = 1 rnA
kT =.!!:!...
R25
= ((TAl
kQ
5 2,5
~
/
I
i
kT
2,0
I~
j
/
3 ./ 1,5 /
V
/ /
/ 1,0
V
V ,/
,/
1/" 0,5 V
o o
-SO o SO 100 150 0 ( -SO o 50 100 150 0 (
-7;. -7;.
952 Siemens
The information contained here has been carefully
reviewed and is believed to be accurate . However,
due to the possibility of unseen inaccuracies, no
responsibility is assumed .
This literature does not convey to the purchaser of
electronic devices any license under the patent
rights of the manufacturer.
Siemens Components , Inc .

Special Products Division
186 Wood Avenue South
Iselin , New Jersey 08830
•
Telephone (800) 888-7730
Fax (908) 632-2830
Telex 844891
Order Number B123-B6253-X-X-7600 CP4 20M 5/90 Printed in U.S A

1990 Siemens Discrete Semiconductors For Surface Mounting

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'"-m SIEMENS

Title Ordering code

Technical information ................................................................ .19

Type designation in accordance with Pro Electron ..............................................19

Terms and symbols (DIN 41785) .............................................................20

Maximum ratings ...........................................................................22

Thermal resistances ........................................................................22

Quality specifications ................................................................25

Definition of defects ........................................................................25

AQL values ................................................................................25

Sampling plan for normal inspection ..........................................................26

Package outlines ......................................................................28

Mounting instructions ................................................................29

Mode of delivery (packing) ..................................................................29

Blister tape ............................. '...................................................30

PCB layout ................................................................................35

Connecting methods .......................................................................36

Evaluation of solder joints ...................................................................38

Sensors ........................................... , .................................. .946

Schottky Diodes for General Purposes

High voltage transistors

AF transistors -Available in hFE sub groups.

'TYpe Maximum Ratings Characteristics (T.mb = 25°C) Package Page

AF transistors *Available in hFE sub groups.

Type Maximum Ratings =25°C)

SIPMOS'" small-signal transistors

Type designation in accordance with Pro Electron

The number of the basic type consists of:

A. Germanium or other material with a band gap of 0.6 .. ·1.0 eV

The three-digit code of the type designation consists of:

Terms and symbols (DIN 41785)

R thJL = Thermal resistance between junction

RthLS = Thermal resistance between terminals

RthSA = Thermal resistance between substrate

The Internal thermal resistance RthJL is

Groups according to total power dissipation

Group Package: SOT 23, SOT 143

Diodes, RF transistors, MOSFET tetrodes, sensors

Group Package: SOT 89

RF and AF transistors, SIPMOS small-signal transistors

Group Package: SOT 223

Diodes; AF, Darlington and high-voltage transistors; SIPMOS small-signal

SOT 89 I 20K/W 15K/W 90K/W 125K/W

SOT 223 I 10K/W 73.3 K/W 83.3 K/W

Package sg;r 89 Package SOT 23, SOT 143

Generally, these specifications sltffi termine the junction temperature 7j.

Methods for measuring the temperature at component connections

AQL values and definitions of defectives

The remaining defectives can be divided into:

Type of defectives AQL values

Sampling plan for normal inspection

1011 1415 2122

35001 to 150000 500

500001 and more

1011 1415 2122

SOT 23 (TO 236)

SOT 143 (TO 253)

~A_ SOT 89 (TO 243)

1-11 icr DIM.