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    PRV: 50 - 1000 Volts Io: 1.0 Ampere: Silicon Rectifier Diodes

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    Efren Hurtado Serna
    This document summarizes the specifications of silicon rectifier diodes produced by EIC Semiconductor. The diodes have peak reverse voltages ranging from 50 to 1000 volts and can handle currents up to 1 amp. They feature low forward voltage drop, low reverse current, and high reliability. The diodes come in molded plastic packages and have axial leads that are solderable.

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    PRV: 50 - 1000 Volts Io: 1.0 Ampere: Silicon Rectifier Diodes

    Uploaded by

    Efren Hurtado Serna
    97 views2 pages
    This document summarizes the specifications of silicon rectifier diodes produced by EIC Semiconductor. The diodes have peak reverse voltages ranging from 50 to 1000 volts and can handle currents up to 1 amp. They feature low forward voltage drop, low reverse current, and high reliability. The diodes come in molded plastic packages and have axial leads that are solderable.

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    1A1_7.pdf

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    This document summarizes the specifications of silicon rectifier diodes produced by EIC Semiconductor. The diodes have peak reverse voltages ranging from 50 to 1000 volts and can handle currents up to 1 amp. They feature low forward voltage drop, low reverse current, and high reliability. The diodes come in molded plastic packages and have axial leads that are solderable.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    97 views2 pages

    PRV: 50 - 1000 Volts Io: 1.0 Ampere: Silicon Rectifier Diodes

    Uploaded by

    Efren Hurtado Serna
    This document summarizes the specifications of silicon rectifier diodes produced by EIC Semiconductor. The diodes have peak reverse voltages ranging from 50 to 1000 volts and can handle currents up to 1 amp. They feature low forward voltage drop, low reverse current, and high reliability. The diodes come in molded plastic packages and have axial leads that are solderable.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 2

    www.eicsemi.

    com

    1A1 ~ 1A7 SILICON RECTIFIER DIODES


    R-1
    PRV : 50 - 1000 Volts
    Io : 1.0 Ampere
    1.00 (25.4)
    FEATURES : 0.099 (2.51) MIN.
    * High current capability 0.095 (2.42)
    * High reliability 0.138 (3.5)
    * Low reverse current 0.114 (2.9)
    * Low forward voltage drop
    * Pb / RoHS Free 1.00 (25.4)
    MIN.
    0.024 (0.6)
    MECHANICAL DATA : 0.020 (0.5)
    * Case : Molded plastic
    * Epoxy : UL94V-O rate flame retardant
    * Lead : Axial lead solderable per MIL-STD-202,
    Method 208 guaranteed Dimensions in inches and ( millimeters )
    * Polarity : Color band denotes cathode end
    * Mounting position : Any
    * Weight : 0.20 gram

    MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS


    Rating at 25 °C ambient temperature unless otherwise specifie.
    Single phase, half wave, 60 Hz, resistive or inductive load
    For capacitive load, derate current by 20%

    RATING SYMBOL 1A1 1A2 1A3 1A4 1A5 1A6 1A7 UNIT

    Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
    Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
    Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
    Maximum Average Forward Current
    IF(AV) 1.0 A
    0.375"(9.5mm) Lead Length Ta = 50 °C
    Peak Forward Surge Current
    8.3ms Single half sine wave Superimposed IFSM 30 A
    on rated load (JEDEC Method)
    Maximum Forward Voltage at I F = 1.0 A. VF 1.1 V
    Maximum DC Reverse Current Ta = 25 °C IR 5.0 μA
    at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 μA
    Typical Junction Capacitance (1) CJ 15 pF
    Typical Thermal Resistance (2) RθJA 50 °C/W
    Junction Temperature Range TJ - 65 to + 125 °C
    Storage Temperature Range TSTG - 65 to + 150 °C

    Notes :
    (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
    (2) Thermal Resistance from Junction to Ambient 0.375" (9.5mm) Lead Length

    Page 1 of 2 Rev. 03 : March 25, 2005


    www.eicsemi.com

    RATING AND CHARACTERISTIC CURVES ( 1A1 - 1A7 )

    FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK


    RECTIFIED CURRENT FORWARD SURGE CURRENT
    1.0 30
    AVERAGE FORWARD OUTPUT

    PEAK FORWARD SURGE


    Ta = 25 °C

    CURRENT, AMPERES
    CURRENT, AMPERES

    0.8 24

    0.6 18

    0.4 12

    0.2 6

    0 0
    0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100

    AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz

    FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS


    REVERSE CURRENT, MICROAMPERES
    FORWARD CURRENT, AMPERES

    10 10

    TJ = 100 °C

    1.0 1.0

    0.1 0.1
    TJ = 25 °C

    0.01 0.01
    0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140

    FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE


    VOLTAGE, (%)

    Page 2 of 2 Rev. 03 : March 25, 2005

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