Application: Silicon NPN Triple Diffused
Application: Silicon NPN Triple Diffused
Application: Silicon NPN Triple Diffused
Application TO–3PFM
Features
• High breakdown voltage
VCES = 1500 V
• Built–in damper diode type
• Isolated package
TO-3PFM
1. Base
2. Collector
1 3. Emitter
2
3
80 20
Pc (W)
16
60 For picture tube arcing
Collector Power Dissipation
12
Collector Current
40
8
20
4 (800 V, 4 A)
0.5 mA
10 100
2.0 A 1.4 A
1.8 A 1.6 A
V CE = 5 V
h FE
50
I C (A)
75°C
5 0.6 A 10
0.4 A
5 Tc = –25°C
0.2 A
2
Tc = 25°C IB = 0 1
0 5 10 0.1 0.2 0.5 1 2 5 10
Collector to Emitter Voltage V CE (V) Collector Current I C (A)
10 10
Base to Emitter Saturation Voltage
IC / IB = 5 IC / I B = 5
5 5
2
V CE(sat) (V)
V BE(sat) (V)
2
1 Tc = –25°C
1
0.5
0.5
Tc = –25°C 25°C
0.2 75°C
25°C
0.1 0.2
75°C
0.05
0.1 0.2 0.5 1 2 5 10 0.1 0.2 0.5 1 2 5 10
Collector Current I C (A) Collector Current I C (A)
2SC4927
10
Collector to Emitter Saturation Voltage
8
V CE(sat) (V)
IC = 4 A 6A 8A
6
0 Tc = 25°C
0.1 0.2 0.5 1 2 5
Base Current I B (A)