UTC 2SA1943 PNP EPITAXIAL SILICON TRANSISTOR

POWER AMPLIFIER APPLICATIONS

FEATURES
* Complementary to UTC 2SC5200
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.

TO-3PL

1:BASE 2:COLLECTOR 3:EMITTER

*Pb-free plating product number:2SA1943L

ABSOLUTE MAXIMUM RATINGS

(TC = 25℃)

PARAMETER SYMBOL RATINGS UNIT

Collector-Base Voltage VCBO -230 V
Collector-Emitter Voltage VCEO -230 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -15 A
Base Current IB -1.5 A
Collector Power Dissipation (Tc=25℃) PC 150 W
Junction Temperature TJ 0 ~ +125 ℃
Storage Temperature Range TSTG -65 ~ +125 ℃

ELECTRICAL CHARACTERISTICS

(Ta=25℃)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector Cut-off Current ICBO VCB = -230V, IE=0 -5.0 μA
Emitter Cut-off Current IEBO VEB= -5V, IC=0 -5.0 μA
Collector-Emitter Breakdown Voltage V(BR) CEO IC= -50mA, IB=0 -230 V
hFE (1) (Note) VCE= -5V, IC= -1A 55 160
DC Current Gain
hFE (2) VCE= -5V, IC= -7A 35 60
Collector-Emitter Saturation Voltage VCE (sat) IC= -8A, IB= -0.8A -1.5 -3.0 V
Base -Emitter Voltage VBE VCE= -5V, IC= -7A -1.0 -1.5 V
Transition Frequency fT VCE= -5V, IC= -1A 30 MHz
Collector Output Capacitance Cob VCB= -10V, IE=0, f=1MHz 360 pF
Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160

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UTC 2SA1943 PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
IC - VCE IC - V BE
-20 -20
COMMON EMITTER COMMON EMITTER
T C =25℃ VCE = -5V
COLLECTOR CURRENT, I C (A)

COLLECTOR CURRENT, I C (A)

-800
-16 -16
-600
-400
-250
-12 -200 -12
-150
-8 -100 -8
IB = -10mA
-50
-40 T C =100℃ 25
-4 -4
-30 -25
-20
0 0
0 -2 -4 -6 -8 -10 0 -0.4 -0.8 -1.2 -1.6 -2.0
COLLECTOR-EMITTER VOLTAGE, V CE (V) BASE-EMITTER VOLTAGE, V BE (V)

VCE(sat) - IC
COLLECTOR-EMITTER SATURATION

-3
hFE - I C
VOLTAGE, VCE(sat) (V)

-1
300
DC CURRENT GAIN, h FE

TC =100℃

-0.3 100
TC =100℃
-25
-0.1 25
30
25 -25
10
COMMON EMITTER COMMON EMITTER
IC / IB = 10 VCE = -5V
0
-0.01 -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 -100

COLLECTOR CURRENT, IC (A) COLLECTOR CURRENT, I C (A)

SAFE OPERATING AREA

-50
IC MAX. (PULSED)※
-30 1ms※
IC MAX.
(CONTINUOUS)
10ms※
-10
COLLECTOR CURRENT, I C (A)

100ms※
-5
-3 DC OPERATION
TC =100℃

-1

-0.5
-0.3
※ SINGLE NONREPETITIVE
PULSE TC = 25℃
-0.1 CURVES MUST BE
DERATED LINEARLY
-0.05 WITH INCREASE IN VCEO MAX.
TEMPERATURE.
-0.03
-3 -10 -30 -100 -300 -1000

COLLECTOR-EMITTER VOLTAGE, VCE (V)

UTC UNISONIC TECHNOLOGIES CO. LTD 2

www.unisonic.com.tw QW-R214-006,A
UTC 2SA1943 PNP EPITAXIAL SILICON TRANSISTOR

rth - t w

TRANSIENT THERMAL RESISTANCE

10
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)

, rth (℃/W) 1 INFINTE HEAT SINK

0.1

0.01
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH, t w (s)

U T C assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all U T C products described or contained
herein. U T C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably ex pected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.

UTC UNISONIC TECHNOLOGIES CO. LTD 3

www.unisonic.com.tw QW-R214-006,A