Sr. No. Index Page No: Thermoelectric Generator Using Peltier Module

THERMOELECTRIC GENERATOR USING PELTIER MODULE
CONTENTS
Sr. No. INDEX PAGE NO.
1 Introduction 3
2 Literature Survey 5
3 Material Required 7
4 Block Diagram 9
5 Circuit Diagram 11
6 PCB Layout and Making 14
7 Hardware Description 16
8 Working 34
`9 Testing and trouble shooting 38
10 Advantages , disadvantages and application 41
11 Conclusion 43
12 Time plan of activities and bill of material 45
13 Reference 48
MES’S MIT POLYTECHNIC, YEOLA Page 1

CHAPTER: 1
INTRODUCTION

INTRODUCTION
The “thermoelectric generator using peltier module” is specially designed for

to save electricity. It helps to avoid load shading. At the place of heating area we can
place peltier module and which produce energy and also it can be stored into battery.
It works on seebeck effect thermoelectric power generation is based on a
phenomenon called “seebeck effect” discovered by Thomas seebeck in 1821. When a
temperature difference is established between the hot and cold junction of dissimilar
materials (metals or semiconductors) a voltages is generated, i.e., seebeck voltage.

CHAPTER: 2
LITERAATURE SURVEY

LITERATURE SURVEY
Thermoelectric generator has taken lots of attentions and large number of

applications were already developed. The introduction of thermoelectric cooling, as
renewed technology, has made an impact in the field of alternative refrigeration. The
common principle is the presence of coupled electrical and thermal currents, so that it
is possible to use the effects to generate power from a temperature differential.
The basic principle behind thermoelectric effect is Peltier effect is occurs
whenever electric current flows between two dissimilar conductors, depending on the
direction of the current flow, the junction of the two conductors well either absorb or
release heat
Measures of research construct were developed and tested in several stages. In
the first stage, every measure was borrowed from the existing literatures. In the
second stage, whole measures and constructs were submitted to a group of academics
to establish content validity. In the third stage, a pre-test had been conducts in a small
group of respondents. In the main survey, data collection was proceeded by using
structured questionnaires.

CHAPTER: 3
MATERIAL REQUIRED

MATERIAL REQUIRED:-
Hard Ware Requirement:-

1. LM 317
2. HCF 4050
3. SG3524N
4. Lm339N
5. P55NF
6. Resistor
7. Capacitor
8. Transistor BC547
9. Transistor BC557
10. Diode
11. Potential transformer
12. Zener diode
13. Heat sink
14. Peltier module
15. Switch
16. Lamp
17. Lamp holder
18. Battery

CHAPTER: 4
BLOCK DIAGRAM

BLOCK DIAGRAM
Fig 4.a. Block diagram of thermoelectric generator
Description of circuit diagram:

When two ends of conductor are held at different temperatures electrons at the
hot junction at higher thermal velocities diffuse to the cold junction. Seeback
discovered that making work end of a metal bar hotter or colder than the other
produced and EMF between the two ends. He experimented with junctions (simple
mechanical connections) made between different conducting materials. He found that
if he created a temperature difference between two electrical connected junctions (e.g.
Heating one of the junction and cooling the other) the wire connecting the two
junction wound cause a compass needle to deflect .He thought that he had discovered
a way to transform thermal energy into magnetic field later it was show that a the
electron diffusion current produce magnetic field in the circuit a changing emf V
(lenz’s low).

CHAPTER: 5
CIRCUIT DIAGRAM

CIRCUIT DIAGRAM
Fig.5.a circuit diagram

Fig .5.b circuit diagram

CHAPTER: 6
PCB MAKING PROCESS

PCB MAKING PROCESS:-

Single sided PCB:-
The single sided PCB is used where the cost has to keep at a minimum.
However, single sided PCB should be used wherever a particular circuit can be
accommodated on such boards. If there is more jumper wires on the single sided then
the use of the double sided PCB should be considered.
PCB Artwork:-
 To make PCB design on computer with the help of software’s.

 To take printout of this design on trace paper.
Screen printing method:-

For the production of large number of identical commercial PCB screen
printing methods is well suited. Screen printing is well known method a printing in
industry; it has the capability of printing on any surface like glass, plastics, metals etc.
Hence it is easily used on the fabrication of the artwork in the PCB designing.
Drilling:-
The drilling can be done with the help of an electronic drilling machine or a
manual one. We drilled the holes using the electronic drilling machines it was fast and
more accurate than the manual one. The drilling has to be done very carefully because
one error can be making the whole PCB useless.
Etching:-
Etching is a process by which the unnecessary copper clad can be chemically
washed out. A copper clad with screen printed artwork is ready for etching as the
point used in screen printing acts as mask for the etching and when treated with the
chemicals like ferric chloride the copper which is not covered by the point get washed
away while the artwork remains on the PCB.

CHAPTER: 7
HARDWARE DISCRIPTION

HARDWARE DESCRIPTION
1) LM 317
Fig. 8.a. circuit diagram of LM317

Features:-
 Output Current in Excess of 1.5 A

 Output Adjustable between 1.2 V and 37 V
 Internal Thermal Overload Protection
 Internal Short Circuit Current Limiting Constant with Temperature
 Output Transistor Safe−Area Compensation
 Floating Operation for High Voltage Applications
 Eliminates Stocking many Fixed Voltages
 Available in Surface Mount D2PAK−3, and Standard 3−Lead
 Transistor Package
 NCV Prefix for Automotive and Other Applications Requiring
 Unique Site and Control Change Requirements; AEC−Q1

Description:-
The LM317 is an adjustable 3−terminal positive voltage regulator capable of
supplying in excess of 1.5 A over an output voltage range of1.2 V to 37 V. This
voltage regulator is exceptionally easy to use and requires only two external resistors
to set the output voltage. Further, it employs internal current limiting, thermal
shutdown and safe area compensation, making it essentially blow−out proof.
The LM317 serves a wide variety of applications including local, on card
regulation. This device can also be used to make a programmable output regulator, or
by connecting a fixed resistor between the adjustment and output, the LM317 can be
used as a precision current regulator.
2) HCF4050
Fig.8.b. circuit diagram of HCF40

Features:
 Propagation delay time :
 Tpd = 40ns (typ.) At vdd = 10v cl = 50pf
 N high to low level logic conversion
 N high "sink" and "source" current

Capability
 N quiescent current specified up to +20v
 N 5v, 10v and 15v parametric ratings
 N input leakage current
 Ii = 100na (max) at vdd = 18v ta = 25°c
 N 100% tested for quiescent current
 N meets all requirements of jedec
 Jesd13b " standard specifications
 For description of b series cmos
Devices.
Description
The HCF4050B is a monolithic integrated circuit fabricated in Metal Oxide
Semiconductor technology available in DIP and SOP packages. It is a non inverting
Hex Buffer/Converter and feature logic level conversions using only one supply
voltage (VDD).The input high level signal (VIH) can exceed the VDD supply voltage
when these devices are used for logic level conversions. This device is intended for
use as CMOS to DTL/TTL converters and can drive directly two DTL/TTL loads
(VDD=5V, VOL£0.4V and IOL£3.2mA.

3) SG3524N
Fig,8.c.pin diagram of SG3524N
Features:-
 Complete PWM power control circuitry

 Single ended or push-pull outputs
 Line and load regulation of 0.2%
 1% maximum temperature variation
 Total supply current is less than 10mA
 Operation beyond 100kHz
Description:-
This monolithic integrated circuit contains all the control circuitry fora
regulating power supply inverter or switching regulator. Included in a 16-pin dual-in-
line package is the voltage reference, error amplifier, oscillator, pulse-width
modulator, pulse steering flip-flop,
dual alternating output switches and current-limiting and shut-down circuitry. This
device can be used for switching regulators of either polarity, transformer-coupled
DC-to-DC converters, transformer less voltage doubles and polarity converters, as
well as other power control applications. The SG3524 is designed for commercial
applications of 0°C to +70°C.

4) LM 339N
Fig.8.d. pin diagram ofLM339N
Features:-
 Wide single supply voltage range or dual supplies for all devices: +2 to
+36 V or ±1 V to ±18 V
 Very low supply current (1.1 mA) independent of supply voltage
 Low input bias current: 25 n type
 Low input offset current: ±5 n type
 Low input offset voltage: ±1 mV type
 Input common-mode voltage range includes ground
 Low output saturation voltage: 250 mV type; (ISINK = 4 mA)
 Differential input voltage range equal to the supply voltage
 TTL, DTL, ECL, MOS, CMOS compatible outputs

Description:-
This family of devices consists of four independent precision-voltage comparators
with an offset voltage specification as low as 2 mV maximum for LM339A,
LM239A, and LM139A. Each comparator has been designed specifically to operate
from a single power supply over a wide range of voltages. Operation from split power
supplies is also possible. These comparators also have a unique characteristic in that
the input common mode voltage range includes ground even though operated from a
single power supply voltage.
5) P55NF
Fig.8.e. diagram of P55NF

Features:
 Typical rds(on) = 0.015 w
 exceptional dv/dt capability
 100% avalanche tested
 surface-mounting d2pak (to-263)
 Power package in tube (no suffix) or

 In tape & reel (suffix “t4”)

 through-hole i²pak (to-262) power
 Package in tube (suffix “-1")
 high current, high switching speed
 motor control, audio amplifiers
 dc-dc & dc-ac converters
 automotive
Description:
This Power MOSFET is the latest development of ST Microelectronic unique
"Single Feature Size™" strip based process. The resulting transistor shows
extremely high packing density for low on-resistance, rugged avalanche
characteristics and less critical alignment steps therefore a remarkable
manufacturing reproducibility.
6) BC 557
Fig.8.f.diagram of BC557

Features
 Low current (max. 100 mA)
 Low voltage (max. 65 V).
Applications
 · General purpose switching and amplification.
Description
 PNP transistor in a TO-92; SOT54 plastic package.
 NPN complements: BC546 and BC547.
7) BC 547:-
Fig.8.g. symbol and diagram of BC 547

Features:-
 Switching and Amplifier

 High Voltage VCEO = 45V
 Storage temperature range = -65 to +150

Description:-
Transistor is a device which transforms current flow from low resistance path
to high resistance path. It is capable of performing many functions of the vacuum tube
in electronic circuits, the transistor is the solid state device consisting of a tiny piece
of semi conducting material, usually germanium or silicon, to which three or more
electrical connections are made.
8) Diode (1N4007):-
Fig.8.h. symbolic diagram of diode
Features:-
 Diffused Junction.
 High Current Capability and Low Forward Voltage Drop.
 Surge Overload Rating to 30A Peak.
 Low Reverse Leakage Current.
Description:-
In electronics, a diode is a two terminal electronic component with

asymmetric conductance; it has low (ideally zero) resistance to current in one

direction, and high (ideally infinite) resistance in the other. A semiconductor diode,
the most common type today, is a crystalline piece of semiconductor material with
a p–n junction connected to two electrical terminals. A vacuum tube diode has
two electrodes, palate (anode) and a heated cathode. Semiconductor diodes were the
first semiconductor electronic devices. Today, most diodes are made of silicon, but
other semiconductors such as selenium or germanium are sometimes used. It is also
used for rectifying purpose.
9) Relay SPDT:-
Fig.8.i. shows symbol of Relay pin out.

Features:
• Subminiature “sugar cube” relay with universal terminal footprint.
• Conforms to VDE0435 (VDE approval: B250Insulation grade), UL508,
CSA22.2.
• Tracking resistance: CTI>250 (-VD type).
• UL class-F coil insulation model available (UL class-B coil insulation for
standard model).
• High switching power: 10 A.
• Two types of seal available; flux protection and fully sealed.
• Withstands impulse of up to 4,500 V.
• 400-mW and 360-mW coil power consumption types available.
• Pre-soldered terminals.
Description:-
These are high quality Single Pole - Double Throw (SPDT) sealed 12V Sugar
Cube relays. Use them to switch high voltage (240AC), and/or high current devices
(7A).This relay's coil is rated up to 14V, with a minimum switching voltage of 10V.
When current starts flowing through the control coil, the electromagnet starts
energizing and thus intensifies the magnetic field. Thus the upper contact arm starts to
be attracted to the lower fixed arm and thus closes the contacts causing a short circuit
for the power to the load. On the other hand, if the relay was already de-energized
when the contacts were closed, then the contact move oppositely and make an open
circuit.
As soon as the coil current is off, the movable armature will be returned by a
force back to its initial position. This force will be almost equal to half the strength of
the magnetic force. This force is mainly provided by two factors. They are the spring
and also gravity.

10) Resistor:-
Fig.8.j. shows diagram of Resistor.
Description:-
Resistor is a component that resists the flow of direct or alternating electric
current. Resistors can limit or divide the current, reduce the voltage, protect an
electric circuit, or provide large amounts of heat or light. An electric current is the
movement of charged particles called electrons from one region to another. Resistors
are usually placed in electric circuits. They are often color coded by three or four
color bands that indicate the specific value of resistance. Resistors obey ohm’s law,
which states that the current density is directly proportional to the electric field when
the temperature is constant.
Potentiometer is a device which has tendency to change the resistance as per
requirement. It has variable resistance. There is a one knob which is movable to
change the resistance. It works as a rheostat.
11) Peltier module
Fig.8.k. diagram of peltier module

Description
Thermoelectric module
A thermoelectric module is a circuit containing thermoelectric materials that

generate electricity from heat directly. A thermoelectric module consists of two
dissimilar thermoelectric materials joining in their ends: an n-type (negatively
charged); and a p-type (positively charged) semiconductors. A direct electric current
will flow in the circuit when there is a temperature difference between the two
materials. Generally, the current magnitude has a proportional relationship with the
temperature difference. (i.e., the more the temperature difference, the higher the
current.)
In application, thermoelectric modules in power generation work in very tough
mechanical and thermal conditions. Because they operate in very high temperature
gradient, the modules are subject to large thermally induced stresses and strains for
long periods of time. They also are subject to mechanical fatigue caused by large
number of thermal cycles.
Thus, the junctions and materials must be selected so that they survive these tough
mechanical and thermal conditions. Also, the module must be designed such that the
two thermoelectric materials are thermally in parallel, but electrically in series. The
efficiency of thermoelectric modules are greatly affected by its geometrical design.
12) Zener diode
Fig.8.l. diagram and symbol of zener diode

13) Heat sink
Fig.8.m. diagram of heat sink
14) Battery:-
A battery is a source of electrical energy. These are the devices which maintain an
electrical current by a transferring chemical energy into electrical energy. This
electrical current is maintained by an EMF inside the battery is equal to the potential
difference between its terminals where there is no current flow, because there is no
voltage drop. The essential difference between cell and battery is that the cell is a
single unit which converts chemical energy into electrical energy while battery is
combination of these cells.

Fig.8.n. diagram of battery
SOME DEFINATION:-
 ELECTROLYTE:-
It is chemical substance in solution which has the property of
conducting current.
e.g. CuSO4, H2SO4 etc.
 ELECTROLYSIS:-
It is defined as the chemical change in an electrolyte when current is
allows to flow through it.
 ELECTRODE:-
It is an electrically conducting material, which forms the two terminals
of cell. The anode means +ve electrode and cathode means –ve
electrode.
 ANODE:-

It is either metallic plate or rod through which current enters the

solution.
 CATHODE:-
It is either metallic case as in a dry cell or rod as in a leclanche cells
through current leaves the solution.
 ION:-
When current is passed through an electrolyte, the decomposed product
of electrolyte is an ION.
 ANION:-
These are the negative charged ions.
 CATIONS:-
These are positively charged ions.
DRY CELL:-
This is modified form of leclanche cell in compact form. In this the zinc
container the internal forms the negative pole carbon positive pole and manganese
dioxide used as a depolarizer is contained in bag of canvass, which acts as a porous
pot. The space between container and bag is field with a paste of ammonium-chloride,
zinc chloride, flour and gum. The top of cell is sealed with pitch material.
LEAD ACID CELL:-

It consists of Bakelite having dil. H2SO4 as a electrolyte. The +ve electrode is
made of lead peroxide and +ve electrode of pure lead.
DISCHARGING:-
When a cell is fully charge, the color of +ve plate Pbo2 is chocolate brown
and –ve sulphuric acid dissociate into hydrogen and sulphate iron. The hydrogen iron
traveled towards Pbo2 and sulphate ion towards Pb plate let Pb is grey. During the
process of discharging.
CHARGING:-

A discharged cell charged by passing dc current into it. In direction from +ve plate to
–ve plate. This direction of current is opposite to direction of current maintained by
discharged cell.
During the charging process hydrogen ion travelled toward the cathode and
sulphate ion towards anode provided on the projected portion of the carbon rod. Body
of cell that is container is put in card board to insulate it from the circuit.
The EMF of cell varies from 1.4 to 1.5 volt and its internal resistance varies
from 0.2 to 0.3 ohm.
These are widely used in electronic equipment such as transistor, radio, tape, player
etc.
CHARACTERICTICS OF CELL:-
1) The cells ones discharge can be recharged.

2) Internal voltage is low as internal resistance is very less.
3) EMF is constant for long period.
4) Its storage capacity is high.
5) It is durable.
6) Cost is less.
7) Has good mechanical strength.
15) Capacitor:-
Fig.8.o. shows capacitor structure

Description:-
Capacitor or electric condenser is a device for storing an electric
charge. The simplest form of capacitor consists of two metal plates separated
by a non-touching layer called the dielectric. When one plate is charged with
electricity from a direct current or electrostatic source, the other plate have
induced in it a charge of the opposite sign; that is, positive if the original

charge is negative and negative if the original charge is positive. The electrical
size of the capacitor is its capacitance. Capacitors are limited in the amount of
electric charge they can absorb; they can conduct direct current for only
instances but function well as conductors in alternating current circuits. Fixed
capacity and variable capacity capacitors are used in conjunction with coils as
resonant circuits in radios and other electronic equipment. Capacitors are
produced in a wide variety of forms. Air, Mica, Ceramics, Paper, Oil, and
Vacuums are used as dielectrics depending on the purpose for which the
device is intended.
The relationship between the charge on a capacitor and the voltage across
the capacitor is linear with a constant, C, called the capacitance.
Q = C V.
16) Potential transformer:-
Fig.8.p.Potential transformer
Description:-
Potential transformer mainly consists of two windings primary and secondary.
The number of turns of primary winding is less as compared to secondary. Potential
transformer is mainly used for the step up voltage at12v/ 230 volt.

CHAPTER: 8
WORKING

WORKING
Peltier module Unit:-
Fig.9.a. construction diagram of Peltier module
A thermoelectric generator consists of two thermoelectric semiconductors (n-type and

p-type) subjected to a temperature difference, Thot − Tcold, and electrically connected in
series through conducting plates on the top and bottom. In the n-type semiconductor,
most charge carriers are negatively charged electrons, whereas in the other one most
of the carriers are positively charged holes. In a temperature gradient, electrons and
holes tend to accumulate on the cold side. An electric field E develops between the
cold side and the hot side of each material, which gives a voltage when integrated
over the length of each. The voltages of the n- and p-type semiconductors add up and
drive an electrical current through an electrical load, here an electrical resistor. The
product of the voltage and the current is the electrical power output of the generator.
Inverter :-
The battery output is connected to inverter which is convert dc into ac with the
help of Power MOSFET.

PWM Unit:-
By using IC SG3524 we can increase a pulse width and given to the step up
transformer.
Step up unit:-
By using step up transformer we can increase a voltage level up to 220 volt ac.

CHAPTER: 09
TESTING AND TROUBLE SHOOTING

Testing and Troubleshooting

Testing and troubleshooting is one of the main activities in project development. In
the testing each module is tested individually. If any problem arises during testing we
have to rectify it, which is called as troubleshooting.
In this activity, we have followed following steps:-
Steps:-
1. We have tested all the PCB connection. In some PCB’S we found some point
were shorted. We have disconnected that point and check the continuity
according To circuit diagram and layouts some points found disconnected the
disconnected point were joined got continuity.
2. We faced the problem during making of the program for project.
3. Also we faced the problem of reconstructing our whole project due to our
small mistake of using velvet paper on plywood and then constructing the
equipment on it. By doing so it may have caused sparking if any problem
occurred.
Thus we had faced numbers of problem and we troubleshoot this problem with great
efforts and completed our project.

Image of project
Fig.10.a Image of project

CHAPTER: 10
ADVANTAGE, DISADVANTAGE AND APPLICATION

ADVANTAGE
 Environmentally friendly
 Recycles wasted heat energy.
 Scalability, meaning that the device can be applied to any size heat
source from a water heater to a manufacturer equipment.
 Reliable source of energy.
 Lower energy production cost.
DISADVANTAGE
 Low energy conversion efficiency rate
 Limited application
 Requires relatively constant heat source
 Cost of peltier module is high.
APPLICATION
 In solar water heater
 Near to heated boiler
 Near to IC engines
 It is applicable for every domestic customer.
 It is applicable for commercial purpose.
 It is used for industrial purpose.
 It is used for emergency lighting system.

CHAPTER: 11
CONCLUSION

CONCLUSION
By this we have concluded that it is very useful to save electricity, to save
money, to avoid wastage of electricity. It is possible to prevent the fossil fuels. By this
project we learned following things:-
 Importance of project.
 How to make circuit diagram.
 To make PCB layout on the copper clad.
 Component mounting and soldering.
 How to troubleshoot the fault and clear it.

CHAPTER: 12
TIME PLAN OF ACTIVITIES AND BILL OF MATERIAL
REQUIRED

TIME REQUIREMENT TO COMPLETE PROJECT
Table no 13.1
sr.no. Task or operation Approx. time

required
1 Collection of data sheets and document 3 weeks
2 Searching and availability of components 2 weeks
3 PCB designing 2 weeks
4 PCB making(drilling and etching) 2 weeks
5 Component mounting and soldering 2 weeks
6 Testing and trouble shooting 3 weeks
7 Project report preparation 2 weeks
Total time required for Project 15 weeks

BILL OF MATERIAL REQUIRED:-
Table no 13.2
Components Quantity Rate Price
LM 317 01 5 5
Resistor 12 1 12
Transistor 03 2 6
Peltier module 01 4300 4300
Relay SPDT 02 18 36
Electrolytic Capacitor 1000 µf 01 8 8
Electrolytic Capacitor 33 µf 01 3 3
Electrolytic capacitor 100 µf 01 3 3
LED 3mm 01 5 5
Potential Transformer 01 250 250
Connector Strip Black 02 25 50
Nut Bolt 05 2 10
IR transmitter and receiver 05 12 60
LDR 01 18 18
Push On Switch 01 12 12
ULN 2003 01 15 15
Op-Amp LM358 01 18 18
Wire 0.55mm 2 mtr Rs.9/mtr 18
IN4007 Diode 04 2 8
LM7805 01 20 20
PCB 01 100 100
Buzzer 01 50 50
Bulb 1 10 10
Preset 06 3 18
Bulb Holder 1 12 12
TOTAL RS.910

CHAPTER: 13
REFEREENCE

REFERENCE
Books:
1. Power electronics- S.K.Khanchandani
2. R. S. Khandpur – Trouble Shooting Electronic Equipment’s – Tata McGraw
Hill Publishing Company Limited – Second Edition – 2008.
Websites:
 http://www.engineersgarage.com
 http://www.amozone.com/book education
 http://www.yahooanswers.com
 http://www.wiki.answers.com
 http://www.rososhop.com
 http://www.smartengineers.com
 http://www.webstored.ansi.com/electronic
Software Used:
 Express PCB
 Proteus simulation

Sr. No. Index Page No: Thermoelectric Generator Using Peltier Module

Uploaded by

Copyright:

Available Formats

Sr. No. Index Page No: Thermoelectric Generator Using Peltier Module

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Sr. No. Index Page No: Thermoelectric Generator Using Peltier Module

Uploaded by

Copyright:

Available Formats

THERMOELECTRIC GENERATOR USING PELTIER MODULE

Sr. No. INDEX PAGE NO.

6 PCB Layout and Making 14

`9 Testing and trouble shooting 38

10 Advantages , disadvantages and application 41

12 Time plan of activities and bill of material 45

MES’S MIT POLYTECHNIC, YEOLA Page 1

MES’S MIT POLYTECHNIC, YEOLA Page 2

The “thermoelectric generator using peltier module” is specially designed for

MES’S MIT POLYTECHNIC, YEOLA Page 3

MES’S MIT POLYTECHNIC, YEOLA Page 4

Thermoelectric generator has taken lots of attentions and large number of

MES’S MIT POLYTECHNIC, YEOLA Page 5

MES’S MIT POLYTECHNIC, YEOLA Page 6

Hard Ware Requirement:-

MES’S MIT POLYTECHNIC, YEOLA Page 7

MES’S MIT POLYTECHNIC, YEOLA Page 8

Fig 4.a. Block diagram of thermoelectric generator

Description of circuit diagram:

MES’S MIT POLYTECHNIC, YEOLA Page 9

MES’S MIT POLYTECHNIC, YEOLA Page 10

Fig.5.a circuit diagram

MES’S MIT POLYTECHNIC, YEOLA Page 11

Fig .5.b circuit diagram

MES’S MIT POLYTECHNIC, YEOLA Page 12

MES’S MIT POLYTECHNIC, YEOLA Page 13

PCB MAKING PROCESS:-

 To make PCB design on computer with the help of software’s.

Screen printing method:-

MES’S MIT POLYTECHNIC, YEOLA Page 14

MES’S MIT POLYTECHNIC, YEOLA Page 15

Fig. 8.a. circuit diagram of LM317

 Output Current in Excess of 1.5 A

MES’S MIT POLYTECHNIC, YEOLA Page 16

Fig.8.b. circuit diagram of HCF40

MES’S MIT POLYTECHNIC, YEOLA Page 17

 N high "sink" and "source" current

MES’S MIT POLYTECHNIC, YEOLA Page 18

Fig,8.c.pin diagram of SG3524N

 Complete PWM power control circuitry

MES’S MIT POLYTECHNIC, YEOLA Page 19

Fig.8.d. pin diagram ofLM339N

MES’S MIT POLYTECHNIC, YEOLA Page 20

Fig.8.e. diagram of P55NF

MES’S MIT POLYTECHNIC, YEOLA Page 21

 In tape & reel (suffix “t4”)

MES’S MIT POLYTECHNIC, YEOLA Page 22

Fig.8.g. symbol and diagram of BC 547

 Switching and Amplifier

MES’S MIT POLYTECHNIC, YEOLA Page 23

Fig.8.h. symbolic diagram of diode

In electronics, a diode is a two terminal electronic component with

MES’S MIT POLYTECHNIC, YEOLA Page 24

Fig.8.i. shows symbol of Relay pin out.

MES’S MIT POLYTECHNIC, YEOLA Page 25

MES’S MIT POLYTECHNIC, YEOLA Page 26

Fig.8.j. shows diagram of Resistor.

11) Peltier module

Fig.8.k. diagram of peltier module