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    9 N 90 e

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    Marcelo Lopes Nunes
    This document summarizes the specifications and characteristics of an N-channel MOSFET semiconductor made by KIA Semiconductors. The MOSFET has a drain-source voltage rating of 900V, an on-state resistance of 1.12 ohms, and is well-suited for applications like switched mode power supplies. The document provides details on maximum ratings, electrical characteristics, thermal characteristics, and test circuits.

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    9 N 90 e

    Uploaded by

    Marcelo Lopes Nunes
    203 views7 pages
    This document summarizes the specifications and characteristics of an N-channel MOSFET semiconductor made by KIA Semiconductors. The MOSFET has a drain-source voltage rating of 900V, an on-state resistance of 1.12 ohms, and is well-suited for applications like switched mode power supplies. The document provides details on maximum ratings, electrical characteristics, thermal characteristics, and test circuits.

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    This document summarizes the specifications and characteristics of an N-channel MOSFET semiconductor made by KIA Semiconductors. The MOSFET has a drain-source voltage rating of 900V, an on-state resistance of 1.12 ohms, and is well-suited for applications like switched mode power supplies. The document provides details on maximum ratings, electrical characteristics, thermal characteristics, and test circuits.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    203 views7 pages

    9 N 90 e

    Uploaded by

    Marcelo Lopes Nunes
    This document summarizes the specifications and characteristics of an N-channel MOSFET semiconductor made by KIA Semiconductors. The MOSFET has a drain-source voltage rating of 900V, an on-state resistance of 1.12 ohms, and is well-suited for applications like switched mode power supplies. The document provides details on maximum ratings, electrical characteristics, thermal characteristics, and test circuits.

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    9A 900V

    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 9N90H

    1.Description

    These N-Channel enhancement mode power field effect transistors are produced using
    Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially
    tailored to minimize on-state resistance, provide superior switching performance, and withstand high
    energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient
    switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge
    to pology.

    2. Features

    n 9A, 900V, RDS(on)=1.12Ω @ VGS=10 V


    n Low gate charge ( typical 70 nC)
    n Low Crss ( typical 14pF)
    n Fast switching
    n 100% avalanche tested
    n Improved dv/dt capability
    n RoHS compliant

    3. Pin configuration

    Pin Function

    1 Gate

    2 Drain

    3 Source

    1 of 7 Rev 1.1 JAN 2014


    9A 900V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 9N90H

    4. Absolute maximum ratings

    (TC= 25 ºC , unless otherwise specified)


    Parameter Symbol Ratings Units
    Drain-source voltage VDSS 900 V
    TC=25°C 9.0 A
    Drain current ID
    TC=100°C 5.7 A
    Drain current (note1) IDM 36 A
    Gate-source Voltage VGSS ± 30 V
    Single pulsed avalanche energy (note2) EAS 900 mJ
    Avalanche current (note1) IAR 9.0 A
    Repetitive avalanche energy (note1) EAR 28 mJ
    Peak diode recovery dv/dt (note 3) dv/dt 4.0 V/ns
    TC=25°C 280 W
    Power dissipation PD
    Derate above 25°C 2.22 W/°C
    Operating and storage temperature range TJ, TSTG -55 to +150 °C
    Maximum lead temperature for soldering purposes,
    TL 300 °C
    1/8" from case for 5 seconds

    5. Thermal characteristics

    Parameter Symbol Typ Max Units


    Thermal resistance, junction-to-case RθJC - 0.45 °C/W
    Thermal resistance, case-to-sink RθCS 0.24 - °C/W
    Thermal resistance, junction-to-ambient RθJA - 40 °C/W

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    9A 900V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 9N90H

    6. Electrical characteristics
    (TC=25°C,unless otherwise notes)
    Parameter Symbol Test Conditions Min Typ Max Units
    Off characteristics
    Drain-source breakdown voltage BVDSS VGS=0V,ID=250μA 900 - - V
    VDS=900V,VGS=0V - - 10 μA
    Zero gate voltage drain current IDSS
    VDS=720V,TC=125°C - - 100 μA
    Gate-body leakage Forward VGS=30V,VDS=0V - - 100 nA
    IGSS
    current Reverse VGS=-30V,VDS=0V - - -100 nA
    Breakdown voltage temperature ID=250μA
    △BVDSS/△TJ - 0.9 - V/°C
    coefficient Referenced to 25°C
    On characteristics
    Gate threshold voltage VGS(th) VDS=VGS, ID=250μA 3.0 - 5.0 V
    Static drain-source on-resistance RDS(on) VGS=10V,ID=4.5A - 1.12 1.4 Ω
    VDS=40V,ID=4.5A
    Forward transconductance gFS - 9.0 - S
    (note4)
    Dynamic characteristics
    Input capacitance CISS - 2780 pF
    VDS=25V,VGS=0V,
    Output capacitance COSS - 228 pF
    f=1MH Z
    Reverse transfer capacitance CRSS - 28 pF
    Switching characteristics
    Turn-on delay time tD(ON) - 55 ns
    Rise time tR VDD=450V,ID=9.0A, - 130 ns
    Turn-off delay time tD(OFF) RG=25Ω (note4, 5) - 110 ns
    Fall time tF - 80 ns
    Total gate charge QG - 70 nC
    VDS=720V, ID=9.0A,
    Gate-source charge QGS - 13.5 - nC
    VGS=10V (note4, 5)
    Gate-drain charge QGD - 27 - nC
    Drain-source diode characteristics and maximum ratings
    Maximum continuous drain-source
    diode forward current IS - - 9.0 A
    Maximum pulsed drain-source diode
    forward current ISM - - 36.0 A

    Drain-source diode forward voltage VSD VGS=0V,IS=9.0A - - 1.4 V


    Reverse recovery time tRR VGS=0V,IS=9.0A, - 850 - ns
    dIF/dt=100A/μs
    Reverse recovery charge QRR (note 4) - 10 - μC
    Note：1. Repetitive rating : pulse width limited by maximum junction temperature
    2. L=21mH, IAS= 9.0A, VDD=50V, RG=25Ω, starting TJ=25°C
    3. ISD≤9.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C
    4. Pulse test : pulse width≤300μs, duty cycle≤2%
    5. Essentially independent of operating temperature

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    9A 900V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 9N90H

    7.Test circuits and waveforms

    4 of 7 Rev 1.1 JAN 2014


    900V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 9N90H

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    900V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 9N90H

    6 of 7 Rev 1.1 JAN 2014


    900V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 9N90H

    7 of 7 Rev 1.1 JAN 2014

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