SMD Type Transistors

NPN Transistors
TIP41 Series (KIP41 Series)

TO-252 Unit: mm

6.50-0.15
+0.15

+0.15
1.50 -0.15
■ Features 2.30 -0.1
+0.1

5.30-0.2
+0.2
0.50 -0.7
+0.8

● Medium Power Linear Switching Applications

● Complement to TIP42/42A/42B/42C

3 .8 0
+0.15
5.55 -0.15
+0.2
9.70 -0.2
0.127

+0.15
0.50 -0.15
0.80-0.1
+0.1
max

+0.25
2.65 -0.1
+0.28
1.50 -0.1
2.3 0.60-+ 0.1
0.1 1 Base
4 .60 -0.15
+0.15
2 Collector
3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol TIP41 TIP41A TIP41B TIP41C Unit
Collector - Base Voltage VCBO 40 60 80 100
Collector - Emitter Voltage VCEO 40 60 80 100 V
Emitter - Base Voltage VEBO 5
Collector Current - Continuous IC 6
Collector Current - Pulse ICP 10 A
Base Current IB 2
Collector Power Dissipation Tc=25°C 20
PC W
Ta=25°C 2
Junction Temperature TJ 150
℃
Storage Temperature range Tstg -65 to 150

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 SMD Type Transistors

NPN Transistors
TIP41 Series (KIP41 Series)
■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit

TIP41 40
TIP41A 60
Collector- base breakdown voltage VCBO Ic= 100 μA， IE=0
TIP41B 80
TIP41C 100
TIP41 40 V
TIP41A 60
Collector-emitter sustaining voltage VCEO(SUS) Ic= 30 mA， IB=0
TIP41B 80
TIP41C 100
Emitter - base breakdown voltage VEBO IE= 100μA， IC=0 5
TIP41 VCB= 40 V , IE=0
TIP41A VCB= 60 V , IE=0
Collector-base cut-off current ICBO 0.1 uA
TIP41B VCB= 80 V , IE=0
TIP41C VCB= 100 V , IE=0
TIP41/41A VCE= 30 V , IE=0
Collector- emittercut-off current ICEO 0.7 mA
TIP41B/41C VCE= 60 V , IE=0
TIP41 VCE= 40 V , IE=0
TIP41A VCE= 60 V , IE=0
Collector- emittercut-off current ICES 400 uA
TIP41B VCE= 80 V , IE=0
TIP41C VCE= 100 V , IE=0
Emitter cut-off current IEBO VEB= 5V , IC=0 1 mA
Collector-emitter saturation voltage VCE(sat) IC= 6 A, IB=-600mA 1.5
V
Base - emitter saturation voltage VBE(sat) VCE= 4V, IC= 6 A 2
hFE(1) VCE= 4V, IC= 300 mA 30
DC current gain
hFE(2) VCE= 4V, IC= 3 A 15 75
Transition frequency fT VCE= 10V, IC= 500mA 3 MHz

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SMD Type Transistors

NPN Transistors
TIP41 Series (KIP41 Series)
■ Typical Characterisitics

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

1000 10000
VCE = 4V IC /IB = 10
hFE, DC CURRENT GAIN

100 1000 V BE(sat)

10 100

V CE(sat)

1 10
1 10 100 1000 10000 1 10 100 1000 10000

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100 25

20
IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

IC(MAX) (PULSE)
10
0. 5

15
1m

IC(MAX) (DC)
ms
5m

s
s

10
1

TIP41 V CEO MAX. 5

TIP41A VCEO MAX.
TIP41B VCEO MAX.
TIP41C VCEO MAX.
0.1 0
1 10 1 00 0 25 50 75 100 125 150 175

o
VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE

Figure 3. Safe Operating Area Figure 4. Power Derating

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