Silicon NPN Power Transistors: Savantic Semiconductor Product Specification
Silicon NPN Power Transistors: Savantic Semiconductor Product Specification
Silicon NPN Power Transistors: Savantic Semiconductor Product Specification
Product Specification
2SC4242
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
450
VCEO
Collector-emitter voltage
Open base
400
VEBO
Emitter-base voltage
Open collector
IC
ICM
Collector current-Peak
14
IB
Base current
PC
Collector dissipation
40
Tj
Junction temperature
150
Tstg
Storage temperature
-50~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
VALUE
3.125
UNIT
/W
SavantIC Semiconductor
Product Specification
2SC4242
CHARACTERISTICS
Tj=25
SYMBOL
PARAMETER
VCEO(SUS)
IC=0.1A ;IB=0
400
V(BR)CBO
IC=1mA ;IE=0
450
V(BR)EBO
IE=1mA; IC=0
VCEsat
IC=4A; IB=0.8A
0.8
VBEsat
IC=4A; IB=0.8A
1.2
ICBO
VCB=450V ;IE=0
100
IEBO
VEB=8V; IC=0
100
hFE
DC current gain
IC=4A ; VCE=5V
Transition frequency
IC=0.4A ; VCE=10V
20
MHz
f=1MHz ; VCB=10V
50
pF
fT
Cob
CONDITIONS
MIN
TYP.
MAX
UNIT
10
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A, IB1=1A
IB2=-1A; VCC=150V
RL=30B
1.0
2.5
0.5
SavantIC Semiconductor
Product Specification
PACKAGE OUTLINE
2SC4242
SavantIC Semiconductor
Product Specification
2SC4242