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    VN10KM

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    johnnys
    This document provides specifications for two N-Channel Enhancement Mode MOSPOWER transistors, the VN10KM and VN2222KM. It lists absolute maximum ratings, electrical characteristics, and thermal properties. Key specifications include a breakdown voltage of 60V, continuous drain currents of 0.3A and 0.25A, and on-state resistances of 4-9 ohms and 6-13.5 ohms respectively.

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    © All Rights Reserved
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    VN10KM

    Uploaded by

    johnnys
    74 views3 pages
    This document provides specifications for two N-Channel Enhancement Mode MOSPOWER transistors, the VN10KM and VN2222KM. It lists absolute maximum ratings, electrical characteristics, and thermal properties. Key specifications include a breakdown voltage of 60V, continuous drain currents of 0.3A and 0.25A, and on-state resistances of 4-9 ohms and 6-13.5 ohms respectively.

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    This document provides specifications for two N-Channel Enhancement Mode MOSPOWER transistors, the VN10KM and VN2222KM. It lists absolute maximum ratings, electrical characteristics, and thermal properties. Key specifications include a breakdown voltage of 60V, continuous drain currents of 0.3A and 0.25A, and on-state resistances of 4-9 ohms and 6-13.5 ohms respectively.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    74 views3 pages

    VN10KM

    Uploaded by

    johnnys
    This document provides specifications for two N-Channel Enhancement Mode MOSPOWER transistors, the VN10KM and VN2222KM. It lists absolute maximum ratings, electrical characteristics, and thermal properties. Key specifications include a breakdown voltage of 60V, continuous drain currents of 0.3A and 0.25A, and on-state resistances of 4-9 ohms and 6-13.5 ohms respectively.

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    J. U I/ roaucti, One..

    20 STERN AVE. TELEPHONE: (973) 376-2922


    SPRINGFIELD. NEW JERSEY 07081 (212)227-6005
    USA FAX: (973) 376-8960
    VN2222KM
    N-Channel Enhancement Mode
    MOSPOWER
    APPLICATIONS PRODUCT SUMMARY
    • Switching Regulators BVDSS
    Part rDS(ON)
    Package
    • Converters Number Volts (ohms)
    • Motor Drivers VN10KM 60 5 TO- 237
    VN2222KM 60 7.5 TO- 237

    PIN 1 - Source
    PIN 2 - Gate
    PIN 3 & TAB - Drain

    TO-237
    1 2 3

    ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)


    Parameter VN10KM VN2222KM Units

    VDS Drain-Source Voltage 60 60 V

    VDGR Drain-Gate Voltage (RQS = 1 Mn> 60 60 V

    I D @ T C = 25° C Continuous Drain Current ±0.3 ±0.25 A

    I D @TC = 100° c Continuous Drain Current ±0.2 ±0.16 A

    'DM Pulsed Drain Current1 ±1 ±1 A

    VGS Gate-Source Voltage + 15, -0.3 + 15, -0.3 V

    PD Max Continuous Power Dissipation 1 1

    PD Max Pulse^ Power Dissipation 3.9 3.9 W

    Junction to Case Linear Derating Factor 0.031 0.031 W/° C

    Junction to
    Ambient Linear Derating Factor 0.008 0.008 W/° C

    Tj Operating and
    -55 To +150 -55 To +150 °C
    Tstg Storage Temperature Range
    Lead Temperature 11 /1 6" from case for 1 0 sees.} 300 300 ° c
    1 Pulse Test: Pulsewidth < 300Msec, Duty Cycle < 2%
    2 1 Sec Continuous Power Single Pulse

    Power Derating
    4.8

    3.2

    5 2.4
    32°C/W

    1.6

    0.8

    <IK • 0 25 50 75 100 125 150 175

    Tc - CASE TEMPERATURE (°C)

    Downloaded from: http://www.datasheetcatalog.com/


    ELECTRICAL CHARACTERISTICS (Tc - 25° C unless otherwise noted)
    STATIC
    Parameter Type Min. Typ. Max. Units Test Conditions

    All 60 120 V
    B^DSS Drain-Source Breakdown v GS = °
    Voltage ID = 100 MA

    VN10KM 0.8 1.5 2.5


    ^GS(lh) Gate-Threshold Voltage VN2222KM V VDS = VGS. ID = 1 mA
    0.6 1.5 2.5
    'GSSF Gate-Body Leakage Forward All 1 100 nA V GS = 15V,V DS = 0

    All 0.1 10 ^A VDS=45V ,VGS=0


    'OSS Zero Gate Voltage Drain
    Current

    All 0.75 1.5


    A V DS^2V DS(ON) , V GS = 10V
    'D(on) On-State Drain Current^

    All 1.2 1.5 V


    v DS(on) Static Drain-Source On-State v GS = 5v ,i D =°- 2 A
    Voltage 1 VN10KM 2 2.5 V VGS = IOV ,iD = °-5A
    VN2222KM 3 3.75

    R0S(on) Static Drain-Source On-State


    All 6 7.5 n V GS = 5V , ID = 0.2A
    Resistance 1 VN10KM 4 5 n V G S =10V , | D =0.5A
    VN2222KM 6 7.5

    R DS(on) Static Drain-Source On-State


    VN10KM 7.2 9 n V GS =10V. ID =°-5A. TC =125°C
    Resistance 1 VN2222KM 10.8 13.5 n
    VGS=10V, ID-0.5A, Tc=125rC

    DYNAMIC
    gfs Forward Transductance^ All 100 200 mS V D S>2V DS(ON) ,I D = 0.5A
    Ciss Input Capacitance All 40 60 pF
    All 17 25 VGs-0 ,Vos- 2 5 v
    C oss Output Capacitance pF
    f - 1 MHz
    Crss Reverse Transfer Capacitance All 3 5 pF
    tQjsj Turn-On Time ime All 7 10 ns V D D =15V , | D s 0.6A
    ns R g = 25fi , R L = 23n
    tQFF Turn-Off Time Time All 7 10 ns (MOSFET switching times are
    essentially independent of
    ns operating temperature.}

    THERMAL RESISTANCE
    FithJC Junction-to-Case All 26 32 °C/W
    R thJA Junction-to-Ambient All 125 °C/W Free Air Operation

    BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS


    Modified MOSPOWER symbol
    VN10KM -0.3 A showing the integral P-N
    Ig Continuous Source Current Junction rectifier
    (Body Diodel
    VN2222KM -0.25 A ?°

    ISM Source Current' All -1 A


    (Body Diode)
    VN10KM -0.85 V TC=25°C, IS=-0.3A, VGS = 0
    VSD Diode Forward Voltage 1 VN2222KM -0.85 V TC=25°C, IS=-0.25A, VGS = 0

    1 Pulse Test: Pulse Width < 300 MSBC, Duty Cycle < 2%

    Downloaded from: http://www.datasheetcatalog.com/


    This datasheet has been downloaded from:

    www.DatasheetCatalog.com

    Datasheets for electronic components.

    Downloaded from: http://www.datasheetcatalog.com/

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