2/10/2018 MADE EASY ONLINE TEST SERIES

Chetan Kapoor 
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ELECTRONIC DEVICES-2 - REPORTS

OVERALL ANALYSIS COMPARISON REPORT SOLUTION REPORT

ALL(16) CORRECT(0) INCORRECT(0) SKIPPED(16)

Chetan Kapoor
Course: GATE+ESE
Electronics Engineering(EC)
Q. 1

For a BJT, ICBO = 1 μA and ICEO = 0.1 mA. The common emitter mode current gain is
HOME FAQ Have any Doubt ?

MY TEST
A
99
BOOKMARKS Correct Option

MY PROFILE Solution :
(a)
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ASK AN EXPERT

B
100

C
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C
0.99

QUESTION ANALYTICS

Q. 2

Consider a MOSFET in saturation mode. If the drain voltage is decreased, then effective channel length of
the device
FAQ Have any Doubt ?

A
increases
Correct Option

Solution :
(a)
When drain voltage increases ; the channel becomes tampered and hence length reduces and vice-
versa.

B
decreases

C
remains unaltered

D
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increases exponentially

QUESTION ANALYTICS

Q. 3

In IC fabrication process etching is used for

FAQ Have any Doubt ?

A
selective removal of unwanted surface
Correct Option

Solution :
(a)
In fabrication process etching is used for removal of unwanted surface.

B
cleaning

C
interconnection

D
none of these

QUESTION ANALYTICS

Q. 4
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A BJT has α = 0.99, IB = 25 μA and ICBO = 200 nA. The percentage error in collector current, when leakage
current is neglected in the calculation is
FAQ Have any Doubt ?

A
less than 1%
Correct Option

Solution :
(a)

B
greater than 1% but less than 2%

C
greater than 2%

D
can’t be calculated

QUESTION ANALYTICS

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Q. 5

For a n-channel enhancement MOSFET the parameter are

the transistor is biased in saturation region with ID  = 0.5 mA. The required is

FAQ Have any Doubt ?

78.125 (78.00 - 78.25)

Correct Option

Solution :
78.125 (78.00 - 78.25)

QUESTION ANALYTICS

Q. 6

The Si transistor shown in figure is biased for constant base current. If VBEQ = 0.7 V, β = 80, VCEQ = 9 V, RC =
3 kΩ and VCC = 15 V, then the required value of RB is __________ kΩ.
(Assume the effect of the leakage current and base width modulation is negligible).

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FAQ Have any Doubt ?

572 (571 - 573)

Correct Option

Solution :
572 (571 - 573)

QUESTION ANALYTICS

Q. 7

In an n -channel enhancement mode MOSFET, parameters are

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p

If VGS = 5 V and VDS = 6 V, then the current ID is ___________

mA.
(Assume the effect of channel length modulation is negligible).
FAQ Have any Doubt ?

4.9 (4.80 - 5.00)

Correct Option

Solution :
4.9 (4.80 - 5.00)

QUESTION ANALYTICS

Q. 8

A pnp BJT is operated in active region with an emitter injection efficiency of 0.98. Out of 99 mA of hole
current injected into base 1.98 mA recombines in base. The current gain in common base configuration for
the BJT is
FAQ Have any Doubt ?

A
0.9604
Correct Option

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Solution :
(a)

B
0.9900

C
0.0198

D
0.0196

QUESTION ANALYTICS

Q. 9

Epitaxial growth in I.C chip

FAQ Have any Doubt ?

A
Involves growth from liquid phase

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B
Involves growth from gas phase

C
May be p - type only

D
All of the above
Correct Option

Solution :
(d)

QUESTION ANALYTICS

Q. 10

Consider the MOS device as shown in the figure. When drain voltage is varied from 5 volt to 1 volt, the
current ID changes from 2 mA to 1 mA. Then the channel length modulation parameter λ is

FAQ Have any Doubt ?

A
0.33 V–1
Correct Option
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Solution :
(a)

B
0.66 V–1

C
1 V–1

D
2 V–1

QUESTION ANALYTICS

Q. 11

Consider series circuit shown below, the LED shown has a constant forward voltage drop of VD = 1.5 V and
its luminous intensity (I ) varies directly with forward current and is described by
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its luminous intensity (IV) varies directly with forward current and is described by
                        IV = 40 iD mcd (millicandela)
If the limiting resistor R = 100 Ω, then the luminous intensity of the LED is

FAQ Have any Doubt ?

A
1.2 mcd

B
1.4 mcd
Correct Option

Solution :
(b)

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C
2.0 mcd

D
None of these

QUESTION ANALYTICS

Q. 12

Consider a p-n-p bipolar junction transistor, the device is biased in forward active mode thus the Emitter-
base junction is forward biased and base-collector junction is reverse biased. The emitter injects holes into
the base region and the holes variation in n - type base region is illustrated in figure. The base doping is NB =
1017 cm-3. The minority carrier lifetime and the hole mobility in base region is 10-4 s and 640 cm2/V-s
respectively. The cross section area of the device is 10-4 cm2. The recombination current inside the base
region will be

FAQ Have any Doubt ?

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A
8 nA
Correct Option

Solution :
(a)

B
40 pA

C
2.6 nA

D
80 pA

QUESTION ANALYTICS

Q. 13
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In a MOS capacitor, the gate voltage exceeds the threshold voltage by 1 V. If the oxide thickness is 25 nm,
then the inversion charge density of the channel is ________× 10-8 C/cm2.

FAQ Have any Doubt ?

13.8 (13.00 - 15.00)

Correct Option

Solution :
13.8 (13.00 - 15.00)

QUESTION ANALYTICS

Q. 14

Consider n-type silicon in MOS structure at T = 300 K. The surface potential that results in maximum space
change width is -0.518 V. The semiconductor doping is _______ × 1013 cm-3.
(Assume ni = 1.5 × 1010 cm-3, VT = 25.9 milli Volts.)
FAQ Have any Doubt ?

33.03 (32.00 - 35.00)

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Correct Option

Solution :
33.03 (32.00 - 35.00)

QUESTION ANALYTICS

Q. 15

In Avalanche photo diode assume the saturation velocity of charge carriers generated by impact ionization
by photon absorbtion be equal to 107 cm/sec in a depletion region that is 10 μm wider then the transition
time will be ____________ psec
FAQ Have any Doubt ?

100
Correct Option
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Correct Option

Solution :
100

QUESTION ANALYTICS

Q. 16

Assuming is the voltage developed at the metal

semiconductor junction interface at zero bias, then the value of for
MOS capacitor will be _____ V?
FAQ Have any Doubt ?

0.67 (0.55 - 0.75)

Correct Option

Solution :
0.67 (0.55 - 0.75)

QUESTION ANALYTICS

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