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    12N06

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    ahonk wijaya
    Fet

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    © All Rights Reserved
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    12N06

    Uploaded by

    ahonk wijaya
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    Fet

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    97 views5 pages

    12N06

    Uploaded by

    ahonk wijaya
    Fet

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 5

    UNISONIC TECHNOLOGIES CO.

    , LTD
    12N06 Preliminary Power MOSFET

    12 Amps, 60 Volts
    N-CHANNEL POWER MOSFET

    „ DESCRIPTION
    1
    The UTC UT12N06 is an N-channel mode Power MOSFET using
    UTC’s advanced technology to provide customers with minimum TO-252
    on-state resistance with extremely high dense cell design, rugged
    avalanche characteristics and less critical alignment steps .
    „ FEATURES
    * VDS(V)= 60V
    * ID =12A
    * RDS(on) < 0.10Ω @VGS = 10 V
    * RDS(on) < 0.12Ω @VGS = 5.0 V
    * High switching speed
    * Low gate charge
    „ SYMBOL
    2.Drain

    1.Gate

    3.Source

    „ ORDERING INFORMATION
    Ordering Number Pin Assignment
    Package Packing
    Lead Free Halogen Free 1 2 3
    12N06L-TN3-R 12N06G-TN3-R TO-252 G D S Tape Reel

    www.unisonic.com.tw 1 of 5
    Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-561.a
    12N06 Preliminary Power MOSFET
    „ ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)
    PARAMETER SYMBOL RATINGS UNIT
    Drain-Source Voltage (VGS=0) VDSS 60 V
    Drain-Gate Voltage (RGS=20KΩ)) VDGR 60 V
    Gate-Source Voltage VGSS ±20 V
    TC = 25°C 12 A
    Continuous ID
    Drain Current TC = 100°C 8.5 A
    Pulsed (Note 2) IDM 48 A
    Power Dissipation PD 30 W
    Derating Factor 0.2 W/°C
    Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns
    Avalanche Energy (Note 4) EAS 100 mJ
    Junction Temperature TJ +150 °C
    Storage Temperature TSTG -55~+150 °C
    Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged.
    Absolute maximum ratings are stress ratings only and functional device operation is not implied.
    2. Pulse width limited by safe operating area
    3. ISD ≤ 12A, di/dt ≤ 200A/µs, VDS ≤ 40V, TJ ≤ TJMAX
    4. Starting TJ = 25°C, ID = 6A, VDD = 30V
    „ THERMAL CHARACTERISTICS
    PARAMETER SYMBOL RATINGS UNIT
    Junction to Ambient θJA 100 °C/W
    Junction to Case θJC 5 °C/W

    UNISONIC TECHNOLOGIES CO., LTD 2 of 5


    www.unisonic.com.tw QW-R502-561.a
    12N06 Preliminary Power MOSFET
    „ ELECTRICAL CHARACTERISTICS (TCASE=25°C, unless otherwise specified)
    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    OFF CHARACTERISTICS
    Drain-Source Breakdown Voltage BVDSS ID=25mA, VGS=0V 60 V
    Drain-Source Leakage Current IDSS VDS=Max rating, VGS=0V 1 µA
    Forward VGS=+20V, VDS=0V +100 nA
    Gate- Source Leakage Current IGSS
    Reverse VGS=-20V, VDS=0V -100 nA
    ON CHARACTERISTICS
    Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1 3 V
    VGS=10V, ID=6A 0.08 0.10 Ω
    Static Drain-Source On-State Resistance RDS(ON)
    VGS=5V, ID=6A 0.10 0.12 Ω
    DYNAMIC PARAMETERS
    Input Capacitance CISS 350 pF
    Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz 75 pF
    Reverse Transfer Capacitance CRSS 30 pF
    SWITCHING PARAMETERS (Note 1,2)
    Total Gate Charge QG 7.5 10 nC
    Gate to Source Charge QGS VGS=5V, VDD=48V, ID=12A 2.5 nC
    Gate to Drain Charge QGD 3.0 nC
    Turn-ON Delay Time tD(ON) 10 ns
    Rise Time tR VDD=30V, ID=6A, RG=4.7Ω, 35 ns
    Turn-OFF Delay Time tD(OFF) VGS=4.5V (Figure 1.) 20 ns
    Fall-Time tF 13 ns
    SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
    Maximum Body-Diode Continuous Current IS 12 A
    Maximum Body-Diode Pulsed Current ISM 48 A
    Drain-Source Diode Forward Voltage
    VSD IS=12A, VGS=0V 1.5 V
    (Note 1)
    Body Diode Reverse Recovery Time tRR 50 ns
    IS=12A, VDD=16V, di/dt=100A/µs
    Body Diode Reverse Recovery Charge QRR 65 µC
    TJ=150°C (Figure 3.)
    Body Diode Reverse Recovery Current IRRM 2.5 A
    Notes: 1. Pulsed: pulse duration=300µs, duty cycle 1.5%
    2. Essentially independent of operating temperature

    UNISONIC TECHNOLOGIES CO., LTD 3 of 5


    www.unisonic.com.tw QW-R502-561.a
    12N06 Preliminary Power MOSFET
    „ TEST CIRCUITS AND WAVEFORMS

    VDD
    A A A VDD
    D 1000µF
    FAST L=100µH
    G D. U. T 3.3µF
    DIODE L
    S B
    B B VD
    25Ω D 3.3µF
    2200µF
    RG G D. U. T ID

    + S VI D. U. T
    -
    PW

    Figure 3. Test Circuit for Inductive Load Switching and Diode Recovery Times Figure 4. Unclamped Inductive Load Test Circuit

    UNISONIC TECHNOLOGIES CO., LTD 4 of 5


    www.unisonic.com.tw QW-R502-561.a
    12N06 Preliminary Power MOSFET

    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
    other parameters) listed in products specifications of any and all UTC products described or contained
    herein. UTC products are not designed for use in life support appliances, devices or systems where
    malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
    whole or in part is prohibited without the prior written consent of the copyright owner. The information
    presented in this document does not form part of any quotation or contract, is believed to be accurate
    and reliable and may be changed without notice.

    UNISONIC TECHNOLOGIES CO., LTD 5 of 5


    www.unisonic.com.tw QW-R502-561.a

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