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    MMSF60R280QTH

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    doug alb
    The document is a datasheet for the MMSF60R280Q 600V 0.28Ω N-channel MOSFET from Magnachip. It provides key parameters, features, applications, ordering information, and detailed electrical and thermal characteristics for the device. The MOSFET uses Magnachip's advanced super junction technology to realize very low on-resistance and gate charge for high efficiency power applications.

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    MMSF60R280QTH

    Uploaded by

    doug alb
    16 views10 pages
    The document is a datasheet for the MMSF60R280Q 600V 0.28Ω N-channel MOSFET from Magnachip. It provides key parameters, features, applications, ordering information, and detailed electrical and thermal characteristics for the device. The MOSFET uses Magnachip's advanced super junction technology to realize very low on-resistance and gate charge for high efficiency power applications.

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    The document is a datasheet for the MMSF60R280Q 600V 0.28Ω N-channel MOSFET from Magnachip. It provides key parameters, features, applications, ordering information, and detailed electrical and thermal characteristics for the device. The MOSFET uses Magnachip's advanced super junction technology to realize very low on-resistance and gate charge for high efficiency power applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    16 views10 pages

    MMSF60R280QTH

    Uploaded by

    doug alb
    The document is a datasheet for the MMSF60R280Q 600V 0.28Ω N-channel MOSFET from Magnachip. It provides key parameters, features, applications, ordering information, and detailed electrical and thermal characteristics for the device. The MOSFET uses Magnachip's advanced super junction technology to realize very low on-resistance and gate charge for high efficiency power applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 10

    MMSF60R280Q Datasheet

    MMSF60R280Q
    600V 0.28Ω N-channel MOSFET

     Description
    MMSF60R280Q is power MOSFET using Magnachip’s advanced super junction technology that
    can realize very low on-resistance and gate charge. It will provide much high efficiency by using
    optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
    designers as well as low switching loss.

     Key Parameters  Package & Internal Circuit

    Parameter Value Unit D


    VDS @ Tj,max 650 V
    RDS(on),max 0.28 Ω
    VTH,typ 3 V G
    ID 13.8 A G
    D
    Qg,typ 25 nC S
    S

     Features
     Low Power Loss by High Speed Switching and Low On-Resistance

     100% Avalanche Tested

     Green Package – Pb Free Plating, Halogen Free

     Applications
     PFC Power Supply Stages

     Switching Applications

     Adapter

     Ordering Information
    Order Code Marking Temp. Range Package Packing RoHS Status
    MMSF60R280QTH 60R280QS -55 ~ 150℃ TO-220SF Tube Halogen Free

    Jan. 2021. Revision 1.2 1 Magnachip Semiconductor Ltd.


    MMSF60R280Q Datasheet

     Absolute Maximum Rating (Tc=25℃ unless otherwise specified)

    Parameter Symbol Rating Unit Note

    Drain – Source voltage VDSS 600 V

    Gate – Source voltage VGSS ±30 V

    13.8 A TC=25℃
    Continuous drain current(1) ID
    8.7 A TC=100℃

    Pulsed drain current(2) IDM 41.4 A

    Power dissipation PD 31 W

    Single - pulse avalanche energy EAS 290 mJ

    MOSFET dv/dt ruggedness dv/dt 50 V/ns

    Diode dv/dt ruggedness(3) dv/dt 15 V/ns

    Storage temperature Tstg -55 ~150 ℃


    Maximum operating junction
    Tj 150 ℃
    temperature
    1) Id limited by maximum junction temperature
    2) Pulse width tP limited by Tj,max
    3) ISD ≤ ID, VDS peak ≤ V(BR)DSS

     Thermal Characteristics

    Parameter Symbol Value Unit

    Thermal resistance, junction-case max Rthjc 4.05 ℃/W

    Thermal resistance, junction-ambient max Rthja 75 ℃/W

    Jan. 2021. Revision 1.2 2 Magnachip Semiconductor Ltd.


    MMSF60R280Q Datasheet

     Static Characteristics (Tc=25℃ unless otherwise specified)

    Parameter Symbol Min. Typ. Max. Unit Test Condition


    Drain – Source
    V(BR)DSS 600 - - V VGS = 0V, ID = 0.25mA
    Breakdown voltage
    Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 0.25mA
    Zero Gate Voltage
    IDSS - - 1 μA VDS = 600V, VGS = 0V
    Drain Current
    Gate Leakage Current IGSS - - 100 nA VGS = ±30V, VDS =0V
    Drain-Source On
    RDS(ON) - 0.25 0.28 Ω VGS = 10V, ID = 6.5A
    State Resistance

     Dynamic Characteristics (Tc=25℃ unless otherwise specified)

    Parameter Symbol Min. Typ. Max. Unit Test Condition

    Input Capacitance Ciss - 941 -


    VDS = 25V, VGS = 0V,
    Output Capacitance Coss - 927 -
    f = 1.0MHz
    pF
    Reverse Transfer Capacitance Crss - 42 -
    Effective Output Capacitance VDS = 0V to 480V,
    Co(er) - 30 -
    Energy Related (4) VGS = 0V, f = 1.0MHz
    Turn On Delay Time td(on) - 20 -

    Rise Time tr - 43 -
    VGS = 10V, RG = 25Ω,
    ns
    VDS = 300V, ID = 13.8A
    Turn Off Delay Time td(off) - 91 -

    Fall Time tf - 42 -

    Total Gate Charge Qg - 25 -


    VGS = 10V, VDS = 480V,
    Gate – Source Charge Qgs - 7 - nC
    ID = 13.8A
    Gate – Drain Charge Qgd - 9 -

    Gate Resistance RG - 7 - Ω VGS = 0V, f = 1.0MHz


    4) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS

    Jan. 2021. Revision 1.2 3 Magnachip Semiconductor Ltd.


    MMSF60R280Q Datasheet

     Reverse Diode Characteristics (Tc=25℃ unless otherwise specified)

    Parameter Symbol Min. Typ. Max. Unit Test Condition


    Continuous Diode Forward
    ISD - - 13.8 A
    Current
    Pulsed Diode Forward Current(2) ISD,pulse - - 41.4 A

    Diode Forward Voltage VSD - - 1.4 V ISD = 13.8A, VGS = 0V

    Reverse Recovery Time trr - 364 - ns


    ISD = 13.8A
    Reverse Recovery Charge Qrr - 4.7 - μC di/dt = 100A/μs
    VDD = 100V
    Reverse Recovery Current Irrm - 26 - A

    Jan. 2021. Revision 1.2 4 Magnachip Semiconductor Ltd.


    MMSF60R280Q Datasheet
     Characteristic Graph

    Jan. 2021. Revision 1.2 5 Magnachip Semiconductor Ltd.


    MMSF60R280Q Datasheet

    Jan. 2021. Revision 1.2 6 Magnachip Semiconductor Ltd.


    MMSF60R280Q Datasheet

    Jan. 2021. Revision 1.2 7 Magnachip Semiconductor Ltd.


    MMSF60R280Q Datasheet

     Test Circuit

    Jan. 2021. Revision 1.2 8 Magnachip Semiconductor Ltd.


    MMSF60R280Q Datasheet

     Physical Dimension

    TO-220SF(3L)

    Note : Package body size, length and width do not include mold flash, protrusions and gate burrs .

    Jan. 2021. Revision 1.2 9 Magnachip Semiconductor Ltd.


    MMSF60R280Q Datasheet

    DISCLAIMER:

    The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
    generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
    expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
    applications do so at their own risk and agree to fully defend and indemnify Seller.

    Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility
    for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip
    Semiconductor Ltd.

    Jan. 2021. Revision 1.2 10 Magnachip Semiconductor Ltd.

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