ILD74 Datasheet
ILD74 Datasheet
ILD74 Datasheet
A 1 8 E
Agency Approvals
C 2 7 C
• UL - File No. E52744 System Code H or J
C 3 6 C
• CSA 93751
• BSI IEC60950 IEC60965 A 4 5 E
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
A 1 16 E
Available with Option 1, X001 Suffix Quad Channel
C 2 15 C
• FIMKO
C 3 14 C
A 4 13 E
Description A 5 12 E
The IL74/ ILD74/ ILQ74 is an optically coupled pair C 6 11 C
with a GaAIAs infrared LED and a silicon NPN pho- C 7 10 C
totransistor. Signal information, including a DC level, A 8 9 E
can be transmitted by the device while maintaining a i179015
Input
(each channel)
Parameter Test condition Symbol Value Unit
Peak reverse voltage VR 3.0 V
Forward continuous current IF 60 mA
Power dissipation Pdiss 100 mW
Derate linearly from 55 % 1.33 mW/°C
Output
Parameter Test condition Symbol Value Unit
Collector-emitter breakdown voltage BVCEO 20 V
Emitter-collector breakdown voltage BVECO 5.0 V
Collector-base breakdown voltage BVCBO 70 V
Power dissipation Pdiss 150 mW
Derate linearly from 25 °C 2.0 mW/°C
Coupler
Parameter Test condition Part Symbol Value Unit
Isolation test voltage t = 1.0 sec. VISO 5300 VRMS
Isolation resistance VIO = 500 V, TA = 25 °C RIO ≥ 1012 Ω
VIO = 500 V, TA = 100 °C RIO ≥ 10 11 Ω
Total package dissipation IL74 Ptot 200 mW
ILD74 Ptot 400 mW
ILQ74 Ptot 500 mW
Derate linearly from 25 °C IL74 2.7 mW/°C
ILD74 5.33 mW/°C
ILQ74 6.67 mW/°C
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Lead soldering time at 260 °C 10 sec.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 20 mA VF 1.3 1.5 V
Reverse current VR = 3.0 V IR 0.1 100 µA
Capacitance VR = 0 V CO 25 pF
Output
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter breakdown IC = 1.0 mA BVCEO 20 50 V
voltage
Collector-emitter leakage VCE = 5.0 V, IF = 0 ICEO 5.0 500 nA
current
Collector-emitter capacitance VCE = 0, f = 1.0 MHz CCE 10.0 pF
Coupler
Parameter Test condition Symbol Min Typ. Max Unit
Saturation voltage collector- IC = 2.0 mA, IF = 16 mA VCEsat 0.3 0.5 V
emitter
Resistance, input to output RIO 100 GΩ
Capacitance (input-output) CIO 0.5 pF
Switching Characteristics
Parameter Test condition Symbol Min Typ. Max Unit
Switching times RL = 100 Ω, VCE = 10 V, ton, toff 3.0 µs
IC = 2.0 mA
1.4 1.5
Normalized to:
1. 3 VCE = 10 V, IF = 10 mA, TA= 25°C
Ta = –55°C ˇ
VF - Forward Voltage - V
1.0
0.5
0.9
Ta = 85°C NCTR(SAT)
0.8 NCTR
0.7 0.0
.1 1 10 100 .1 1 10 100
IF - Forward Current - mA I F - LED Current - mA
iil74_01 iil74_03
Fig. 1 Forward Voltage vs. Forward Current Fig. 3 Normalized Non-Saturated and Saturated CTR vs. LED
Current
1.5 1.5
Normalized to:
Normalized to:
NCTR - Normalized CTR
VCE = 10 V, IF = 10 mA VCE = 10 V, IF = 10 mA
NCTR - Normalized CTR
0.5 0.5
NCTR(SAT)
NCTR NCTR(SAT)
NCTR
0.0 0.0
.1 1 10 100 .1 1 10 100
I F - LED Current - mA I F - LED Current - mA
iil74_02 iil74_04
Fig. 2 Normalized Non-Saturated and Saturated CTR vs. LED Fig. 4 Normalized Non-Saturated and Saturated CTR vs. LED
Current Current
1.5 1.5
Normalized to: Normalized to:
IF =10 mA
CTRce(sat) VCE = 0.4 V
Vcb = 9.3 V
1.0 1.0
TA = 85°C Ta = 25°C
0.5
0.5
25°C
NCTR(SAT)
50°C
NCTR
0.0 70°C
.1 1 10 100 0.0
IF - LED Current - mA
.1 1 10 100
iil74_05 iil74_08
IF - LED Current - mA
Fig. 5 Normalized Non-Saturated and Saturated CTR vs. LED Fig. 8 Normalized CTRcb vs. LED Current and Temp.
Current
35 1000
Ta = 25°C
ICE - Collector Current - mA
30
100
Icb = 1.0357 *IF ^1.3631
Icb - Collector Base
25
Photocurrent - µA
50°C
20 10
70°C
15 25°C
1
85°C
10
.1
5
0
.01
0 10 20 30 40 50 60 .1 1 10 100
IF - LED Current - mA iil74_09 IF - LED Current - mA
iil74_06
Fig. 6 Collector-Emitter Current vs. Temperature and LED Fig. 9 Collector Base Photocurrent vs. LED Current
Current
10 5 10
ICEO - Collector-Emitter - nA
Normalized Photocurrent
10 4 Normalized to:
If = 10 mA, Ta = 25°C
10 3 1
10 2
Vce = 10 V
10 1
.1
Typical
10 0 NIB-Ta=-20°C
NIb,Ta=25°C
10 -1 NIb,Ta=50°C
.01 NIb,Ta=70°C
10 -2
-20 0 20 40 60 80 100 .1 1 10 100
TA - Ambient Temperature - °C
IF - LED Current - mA
iil74_07 iil74_10
Fig. 7 Collector-Emitter Leakage Current vs.Temp. Fig. 10 Normalized Photocurrent vs. IF and Temp.
1.2
70°C Normalized to:
50°C Ib = 20 µA
NHFE - Normalized HFE
0.6
0.4
1 10 100 1000
Ib - Base Current - µA
iil74_11
1.5
Normalized to:
VCE = 10 V
IB = 20 µA
70°C 50°C
TA = 25°C
1.0
25°C
- 20°C
0.5
Vce=0.4 V
0.0
1 10 100 1000
iil74_12
Ib - Base Current - µA
1000 2.5
Ta = 25°C, IF = 10 mA
tpLH - Propagation Delay µs
10 1.5
tpLH
1 1.0
.1 1 10 100
RL - Collector Load Resistor - kΩ
iil74_13
Package Dimensions in mm
14770
pin one ID
4 3 2 1
.255 (6.48)
.268 (6.81)
5 6 7 8
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14) .300 (7.62)
.031 (0.79) typ.
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.050 (1.27) 10° .110 (2.79) .250(6.35)
.020 (.51 ) .130 (3.30)
.018 (.46) .035 (.89 ) 3°–9°
.022 (.56) .100 (2.54) typ. .008 (.20)
i178006 .012 (.30)
pin one ID
8 7 6 5 4 3 2 1
.255 (6.48)
.265 (6.81)
9 10 11 12 13 14 15 16 ISO Method A
.779 (19.77 )
.790 (20.07)
i178007
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