DS2436

Battery ID/Monitor Chip

www.maxim-ic.com
FEATURES PACKAGE OUTLINE
ƒ Unique 1-Wire® interface requires only one
port pin for communication DALLAS
ƒ Provides unique 64-bit identification number DS2436 1 2 3
to battery packs
ƒ On-board A/D converter monitors battery BOTTOM
voltage for end-of-charge and end-of-
discharge determination
ƒ Eliminates thermistors by sensing battery
temperature on-chip NC 1 8 VDD
ƒ 256-bit nonvolatile user memory available NC 2 7 NC
for storage of data such as fuel gauge and DQ 3 6 NC
manufacturing information GND 4 5 NC
ƒ 2-byte cycle counter
ƒ Operating range of -40°C to +85°C DS2436Z+
DQ
GND

VDD

ƒ Applications include portable computers, 150-mil, 8-Pin SOIC

portable/ cellular phones, consumer DS2436B+
TO-92 PACKAGE
electronics, and handheld instrumentation

PIN DESCRIPTION
GND - Ground
DQ - Data In/Out
VDD - Supply/Battery Connection

DESCRIPTION
The DS2436 Battery Identification/Monitor Chip provides a convenient method of tagging and
identifying battery packs by manufacturer, chemistry, or other identifying parameters. The DS2436
allows the battery pack to be coded with a unique 64-Bit ROM ID and a 16-Bit Manufacturer ID, and also
store information regarding the battery life and charge/ discharge characteristics in its nonvolatile
memory.
The DS2436 also performs the essential function of monitoring battery temperature, without the need for
a thermistor in the battery pack.
A cycle counter assists to determine the remaining cycle life of the battery.
Finally, the DS2436 measures battery voltage and sends that measured value to a host CPU for use in
end-of-charge or end-of-discharge determination or basic fuel gauge operation.

Information is sent to/from the DS2436 over a 1-Wire interface, so that battery packs need only have
three output connectors: power, ground, and the 1-Wire interface.
1-Wire is a registered trademark of Dallas Semiconductor.

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 DS2436

ORDERING INFORMATION
PART MARKING PACKAGE INFORMATION
DS2436B+ DS2436 TO-92
DS2436B+T&R DS2436 DS2436B+ on Tape-and-Reel
DS2436Z+ DS2436 SOIC
DS2436Z+T&R DS2436 DS2436Z+ on Tape-and-Reel
DS2436B DS2436 TO-92
DS2436B/T&R DS2436 DS2436B on Tape-and-Reel
DS2436Z DS2436 SOIC
DS2436Z/T&R DS2436 DS2436Z on Tape-and-Reel
+ denotes lead-free package.

DETAILED PIN DESCRIPTION

SYMBOL DESCRIPTION
GND Ground pin
DQ Data input/output pin for 1-Wire communication port
VDD Supply Pin- input power supply (battery connection)
NC No Connect

OVERVIEW
The block diagram of Figure 1 shows the major components of the DS2436. The DS2436 has seven
major data components: 1) 64-bit lasered ROM ID, 2) Scratchpad Memory, 3) Nonvolatile Memory, 4)
On-board SRAM, 5) Temperature sensor, 6) Battery voltage A/D converter, and 7) 16-bit Manufacturer
ID Register.

Communication to the DS2436 is via a 1-Wire port. With the 1-Wire port, the memory and control
functions will not be available until the ROM function protocol has been established. The master must
first provide one of four ROM function commands: 1) Read ROM, 2) Match ROM, 3) Search ROM, or 4)
Skip ROM. These commands operate on the 64-bit ROM ID portion of each device and can identify a
specific device if many are present on the 1-Wire line as well as indicate to the bus master how many and
what types of devices are present. After a ROM function sequence has been successfully executed, the
memory and control functions are accessible. The master may then provide any one of the fifteen memory
and control function commands.

Access to the DS2436 memory is through the 1-Wire interface and scratchpad memory. Charging
parameters and other data such as battery chemistry, fuel gauge information, and other user data may be
stored in the DS2436, allowing this information to be permanently stored in the battery pack.

PARASITE POWER
The ID ROM registers and memory of the DS2436 can be read even when the battery is completely
discharged by using parasite-powered operation. When parasite powered, the DS2436 “steals” power
from the DQ line whenever it is high. DQ will provide sufficient power for read operations as long as
specified timing and voltage requirements are met (see the section titled “1-Wire Bus System”).

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 DS2436
DS2436 BLOCK DIAGRAM Figure 1

TEMPERATURE TEMPERATURE REGISTER

MEASURING
CIRCUITRY

STATUS REGISTER
CONTROL LOGIC AND
MEMORY FUNCTION
CONTROL

VOLTAGE REGISTER
VDD A/D CONVERTER

CYCLE COUNTER

MANUFACTURER ID
64-BIT ROM ID AND
DQ 1-WIRE PORT

GDD

256-BIT SCRATCHPAD 256-BIT

NONVOLATILE RAM

64-BIT SCRATCHPAD 64-BIT

RAM

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 DS2436
DS2436 MEMORY PARTITIONING Figure 2

LSB

MSB

LSB

MSB

LSB

MSB

LSB

MSB

LSB

MSB

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 DS2436
DS2436 MEMORY MAP Figure 3

BYTE ADDRESS
PAGE 1 USER BYTE 0 00h
USER BYTE 1 01h
USER BYTE 2 02h
USER BYTE 3 03h
SP1 USER BYTE 4 04h
OR USER BYTE 5 05h
NV1 USER BYTE 6 06h
USER BYTE 7 07h
USER BYTE 8 08h
USER BYTE 9 09h
USER BYTE 10 0Ah
USER BYTE 11 0Bh
USER BYTE 12 0Ch
USER BYTE 13 0Dh
USER BYTE 14 0Eh
USER BYTE 15 0Fh
USER BYTE 16 10h
USER BYTE 17 11h
USER BYTE 18 12h
USER BYTE 19 13h
USER BYTE 20 14h
USER BYTE 21 15h
USER BYTE 22 16h
USER BYTE 23 17h
24 18h
RESERVED
ADDRESS
SPACE
31 1Fh

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 DS2436
DS2436 MEMORY MAP (cont’d) Figure 3

BYTE ADDRESS
PAGE 2 USER BYTE 0 20h
USER BYTE 1 21h
USER BYTE 2 22h
USER BYTE 3 23h
SP2 USER BYTE 4 24h
OR USER BYTE 5 25h
NV2 USER BYTE 6 26h
USER BYTE 7 27h
8 28h

RESERVED
ADDRESS
SPACE

31 3Fh

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 DS2436

DS2436 MEMORY MAP (cont’d) Figure 3

BYTE ADDRESS
PAGE 3 USER BYTE 0 40h
USER BYTE 1 41h
USER BYTE 2 42h
USER BYTE 3 43h
SP3 USER BYTE 4 44h
OR USER BYTE 5 45h
SRAM USER BYTE 6 46h
USER BYTE 7 47h

RESERVED
ADDRESS
SPACE

31 5Fh

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 DS2436

DS2436 MEMORY MAP (cont’d) Figure 3

BYTE ADDRESS
PAGE 4 TEMPERATURE LSB 0 60h
TEMPERATURE MSB 1 61h
STATUS LSB 2 62h
REGISTERS STATUS MSB 3 63h
4 64h
5 65h
6 66h
7 67h
8 68h
9 69h
10 6Ah
11 6Bh
RESERVED 12 6Ch
ADDRESS 13 6Dh
SPACE 14 6Eh
15 6Fh
16 70h
17 71h
18 72h
19 73h
20 74h
21 75h
22 76h
VOLTAGE LSB 23 77h
VOLTAGE MSB 24 78h

RESERVED
ADDRESS
SPACE
31 7Fh

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 DS2436

DS2436 MEMORY MAP (cont’d) Figure 3

BYTE ADDRESS
PAGE 5 MFG ID LSB 0 80h
MFG ID MSB 1 81h
CYCLE CTR LSB 2 82h
REGISTERS CYCLE CTR MSB 3 83h

RESERVED
ADDRESS
SPACE

31 9Fh

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 DS2436
MEMORY
The DS2436’s memory is divided into five pages, each page filling 32 bytes of address space. Not all of
the available addresses are used, however. Refer to the memory map of Figure 3 to see actual addresses
which are available.

The first three pages of memory consist of a scratchpad RAM and either EEPROM (pages 1 and 2) or
SRAM (page 3). The scratchpads help insure data integrity when communicating over the 1-Wire bus.
Data is first written to the scratchpad where it can be read back. After the data has been verified, a copy
scratchpad command will transfer the data to the EEPROM or SRAM. This process insures data integrity
when modifying the memory.

The fourth page of memory consists of registers which contain the Temperature, Voltage, and Status
registers. These registers are made from SRAM cells, except for the lock bit in the status register which is
implemented in EEPROM.

The fifth page of memory holds the Manufacturer ID, implemented in laser ROM, and the Cycle Counter,
implemented in EEPROM.

PAGE 1
The first page of memory has 24 bytes. It consists of scratchpad RAM and nonvolatile EEPROM
memory. These 24 bytes may be used to store any data, such as: battery chemistry descriptors,
manufacturing lot codes, etc.

This page may be locked to prevent data stored here from being changed inadvertently.

The nonvolatile and the scratchpad portions of this page are organized identically, as shown in Figure 3.
In this page, these two portions are referred to as NV1 and SP1, respectively.

PAGE 2
The second page of memory has 8 bytes. It consists of a scratchpad RAM and a nonvolatile EEPROM
memory. These 8 bytes may be used to store additional data. In contrast to Page 1 memory, the Lock
function is not available for Page 2.

PAGE 3
The third page of memory has 8 bytes. It consists of a scratchpad RAM and an SRAM memory. This
address space may be used to store additional data, provided that, should the battery discharge completely
and power to the DS2436 is lost, this data may also be lost without serious repercussions. Data which
must remain even if power to the DS2436 is lost should be placed in either Page 1 or Page 2.

Prefer this section of memory to store fuel gauge and self discharge information. If the battery dies and
this information is lost, no serious consequences will result since the user can easily determine that the
battery is dead.

PAGE 4
The fourth page of memory is used by the DS2436 to store the battery temperature and voltage. A 2-byte
Status Register informs of conversion progress and memory lock state.

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 DS2436
TEMPERATURE REGISTERS (60h-61h)
The DS2436 can measure temperature without external components. The resulting temperature
measurement is placed in a two-byte Temperature Register. This register is implemented in SRAM, and
therefore will hold data until the battery voltage falls below minimum VDD.

The temperature reading is provided in a 13-bit, two’s complement format, with 0.03125°C resolution.
Table 1 describes the exact relationship of output data to measured temperature. The data is transmitted
serially over the 1-Wire interface. The DS2436 can measure temperature over the range of -40°C to
+85°C in 0.03125°C increments. For Fahrenheit usage, a lookup table or conversion factor must be used.

Note that temperature is represented in the DS2436 in terms of a 0.03125°C LSB, yielding the following
13-bit format:
MSB LSB
S 26 25 24 23 22 21 20 2-1 2-2 2-3 2-4 2-5 0 0 0

Unit =1°C
The MSB of the Temperature Register contains the integer portion of the temperature valve.

TEMPERATURE/DATA RELATIONSHIPS Table 1

TEMPERATURE DIGITAL OUTPUT (Binary) DIGITAL OUTPUT (Hex)
+125 °C 01111101 00000000 7B00
+25.0625°C 00011001 00010000 1910
+1/2°C 00000000 10000000 0080
0°C 00000000 00000000 0000
-1/2°C 11111111 10000000 FF80
-25.0625°C 11100110 11110000 E6F0
-55°C 11001001 00000000 C900

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 DS2436
STATUS REGISTER (62h-63h)
The Status Register is a two-byte read only register at addresses 62h and 63h. Address 62h is the least
significant byte of the Status Register and is currently the only address with defined status bits; the other
byte at address 63h is reserved for future use. The Status Register is formatted as follows:
MSB LSB
0 0 0 0 ADB LOCK NVB TB 62h

1 1 1 1 1 1 1 1 63h

where
TB = Temperature Busy flag. “1” = temperature conversion in progress; “0” = temperature
conversion complete, valid data in temperature register.
NVB = Nonvolatile memory busy flag. “1” = Copy from scratchpad to EEPROM in progress, “0”
= nonvolatile memory is not busy. A copy to EEPROM may take from 2 ms to 10 ms
(taking longer at lower supply voltages).
LOCK = “1” indicates that NV1 is locked; “0” indicates that NV1 is unlocked. This status bit is
implemented in EEPROM in order to preserve its state even when the battery is
completely discharged.
ADB = A/D converter busy flag. “1” = analog-to-digital conversion in progress on battery voltage;
“0” = conversion complete, no measurement being made. An A/D conversion takes
approximately 10 ms.

VOLTAGE REGISTER (77h-78h)

The onboard analog-to-digital converter (ADC) has 10 bits of resolution and will perform a conversion
when the DS2436 receives the command protocol (Convert V) [B4h]. The result of this measurement is
placed in the 2-byte Voltage Register (see Memory Map). The range for the DS2436 ADC is 0V to 10V;
this range is suitable for NiCd or NiMH battery packs up to six cells, and for lithium ion battery packs of
two cells. The full-scale range of the ADC is scaled to 10.24V, resulting in a resolution of 10 mV.

While the ADC has a range that extends to 0V, it is important to note that the battery voltage is also the
supply voltage to the DS2436. As such, the accuracy of the ADC begins to degrade below battery
voltages of 2.4 volts, and the ability to make conversions is limited by the operating voltage range of the
DS2436.

Voltage is expressed in this register in straight binary format, as outlined in Table 2. Note that while
codes exits for values below 2.4 volts, accuracy of the ADC and the limitation on the DS2436’s supply
voltage make it unlikely that these values would be used in actual practice.

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 DS2436
VOLTAGE/DATA RELATIONSHIP Table 2
TEMPERATURE DIGITAL OUTPUT (Binary) DIGITAL OUTPUT (Hex)
0.010V 0000 0000 0000 0001 0001
2.4V 0000 0001 1111 0000 00F0
3.6V 0000 0001 0110 1000 0168
5V 0000 0001 1111 0100 01F4
7.2V 0000 0010 1101 0000 02D0
9.99V 0000 0011 1110 0111 03E7
10V 0000 0011 1110 1000 03E8

PAGE 5
The fifth page of memory holds the Manufacturer ID number, as well as a 2-byte counter for counting the
number of battery charge/discharge cycles.

MANUFACTURER ID REGISTER (80h and 81h)

The Manufacturer ID Register is a 16-bit laser ROM register that can contain a unique identification code
if purchased from Dallas Semiconductor. This ID number is programmed by Dallas Semiconductor, is
unchangeable, and is unique to each customer. This ID number may be used to assure that batteries
containing a DS2436 have the same manufacturer ID number as a charger configured to operate with that
battery pack. This feature may be used to prevent charging of batteries for which the charging circuit has
not been designed.

CYCLE COUNTER (82h and 83h)

The Cycle Counter gives an indication of the number of charge/discharge cycles the battery pack has
been through. This nonvolatile register is incremented by the user through the use of a protocol to the
DS2436 and is reset by another protocol. The counter is a straight binary counter, formatted as follows:

CYCLE COUNTER
MSB
27 26 25 24 23 22 21 20 82h

215 214 213 212 211 210 29 28 83h

The Cycle Counter does not roll over when it reaches its maximum value (FFFFh).

MEMORY FUNCTION COMMANDS 64-BIT LASERED ROM

Each DS2436 contains a unique ROM code that is 64 bits long. The first 8 bits are a 1-Wire family code
(DS2436 code is 1Bh). The next 48 bits are a unique serial number. The last 8 bits are a Cyclic
Redundancy Check (CRC) of the first 56 bits. (See Figure 4.) The 64-bit ROM and ROM Function
Control section allow the DS2436 to operate as a 1-Wire device and follow the 1-Wire protocol detailed
in the section “1-Wire Bus System.”

The functions required to control sections of the DS2436 are not accessible until the ROM function
protocol has been satisfied. This protocol is described in the ROM Function Protocol Flow Chart (Figure
5). The 1-Wire bus master must first provide one of four ROM function commands: 1) Read ROM, 2)
Match ROM, 3) Search ROM, or 4) Skip ROM. After a ROM function sequence has been successfully
executed, the functions specific to the DS2436 are accessible. The bus master may then provide one of
the 15 memory and control function commands.
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 DS2436
CRC GENERATION
The DS2436 has an 8-bit CRC stored in the most significant byte of the 64-bit ROM. The bus master can
compute a CRC value from the first 56 bits of the 64-bit ROM and compare it to the value stored within
the DS2436 to determine if the ROM data has been received error-free by the bus master. Additionally,
each page read appends one CRC byte. The equivalent polynomial function of this CRC is:
CRC = X8 + X5 + X4 + 1
Xn = bit at the n-th stage
+ = "exclusive-or" function

The DS2436 also generates an 8-bit CRC value using the same polynomial function shown above and
provides this value to the bus master to validate the transfer of data bytes. In each case where a CRC is
used for data transfer validation, the bus master must calculate a CRC value using the polynomial
function given above and compare the calculated value to either the 8-bit CRC value stored in the 64-bit
ROM portion of the DS2436 (for ROM reads) or the 8-bit CRC value computed within the DS2436
scratchpad (which is read as a 33rd byte when the scratchpad is read). The comparison of CRC values and
decision to continue with an operation are determined entirely by the bus master. There is no circuitry
inside the DS2436 that prevents a command sequence from proceeding if the CRC stored in or calculated
by the DS2436 does not match the value generated by the bus master. Proper use of the CRC can result in
a communication channel with a very high level of integrity.

The 1-Wire CRC can be generated using a polynomial generator consisting of a shift register and XOR
gates as shown in Figure 6. Additional information about the Dallas 1-Wire CRC is available in an
application note entitled “Understanding and Using Cyclic Redundancy Checks with Dallas
Semiconductor Touch Memory Products” (App Note #27).

In the circuit in Figure 6, the shift register bits are initialized to 0. Then, starting with the least significant
bit of the family code, 1 bit at a time is shifted in. After the 8th bit of the family code has been entered,
the serial number is entered. After the 48th bit of the serial number has been entered, the shift register
contains the CRC value. Shifting in the 8 bits of CRC should return the shift register to all 0s.

64-BIT LASERED ROM Figure 4

8-BIT CRC CODE 48-BIT SERIAL NUMBER 8-BIT FAMILY CODE (1B)
MSB LSB MSB LSB MSB LSB

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 DS2436
ROM FUNCTIONS FLOW CHART Figure 5

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 DS2436
1-WIRE CRC CODE Figure 6

1-WIRE BUS SYSTEM

The 1-Wire bus is a system which has a single bus master and one or more slaves. The DS2436 behaves
as a slave. All data is communicated LSB first. The discussion of this bus system is broken down into
three topics: hardware configuration, transaction sequence, and 1-Wire signaling (signal types and
timing).

HARDWARE CONFIGURATION
The 1-Wire bus has only a single line by definition; it is important that each device on the bus be able to
drive it at the appropriate time. To facilitate this, each device attached to the 1-Wire bus must have open
drain or three-state outputs. The 1-Wire port of the DS2436 (DQ pin) is open drain with an internal circuit
equivalent to that shown in Figure 7. A multidrop bus consists of a 1-Wire bus with multiple slaves
attached. The 1-Wire bus requires a pullup resistor of approximately 5 kΩ.

The idle state for the 1-Wire bus is high. If for any reason a transaction needs to be suspended, the bus
MUST be left in the idle state for the transaction to resume. Infinite recovery time can occur between bits
so long as the 1-Wire bus is in the inactive (HIGH) state during the recovery period. If this does not occur
and the bus is left low for more than 480 μs, all components on the bus will be reset.

TRANSACTION SEQUENCE
The protocol for accessing the DS2436 via the 1-Wire port is as follows:
ƒ Initialization

ƒ ROM Function Command

ƒ Memory Function Command

ƒ Transaction/Data

INITIALIZATION
All transactions on the 1-Wire bus begin with an initialization sequence. The initialization sequence
consists of a reset pulse transmitted by the bus master followed by presence pulse(s) transmitted by the
slave(s).

The presence pulse lets the bus master know that the DS2436 is on the bus and is ready to operate. For
more details, see the “1-Wire Signaling” section.

ROM FUNCTION COMMANDS

Once the bus master has detected a presence, it can issue one of the four ROM function commands. All
ROM function commands are 8 bits long. A list of these commands follows (refer to flowchart in Figure
5).

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 DS2436
HARDWARE CONFIGURATION Figure 7

Read ROM [33h]

This command allows the bus master to read the DS2436’s 8-bit family code, unique 48-bit serial
number, and 8-bit CRC. This command can only be used if there is a single DS2436 on the bus. If more
than one slave is present on the bus, a data collision will occur when all slaves try to transmit at the same
time (open drain will produce a wired-AND result).

Match ROM [55h]

The match ROM command followed by a 64-bit ROM sequence allows the bus master to address a
specific DS2436 on a multidrop bus. Only the DS2436 that exactly matches the 64-bit ROM sequence
will respond to the following memory function command. All slaves that do not match the 64-bit ROM
sequence will wait for a reset pulse. This command can be used with a single or multiple devices on the
bus.

Skip ROM [CCh]

This command can save time in a single drop bus system by allowing the bus master to access the
memory functions without providing the 64-bit ROM code. If more than one slave is present on the bus
and a read command is issued following the Skip ROM command, data collision will occur on the bus as
multiple slaves transmit simultaneously (open drain pulldowns will produce a wired-AND result).

Search ROM [F0h]

When a system is initially brought up, the bus master might not know the number of devices on the 1-
Wire bus or their 64-bit ROM codes. The Search ROM command allows the bus master to use a process
of elimination to identify the 64-bit ROM codes of all slave devices on the bus.

Example of a ROM Search

The ROM search process is the repetition of a simple, three-step routine: read a bit, read the complement
of the bit, then write the desired value of that bit. The bus master performs this simple, three-step routine
on each bit of the ROM. After one complete pass, the bus master knows the contents of the ROM in one
device. The remaining number of devices and their ROM codes may be identified by additional passes.

The following example of the ROM search process assumes four different devices are connected to the
same 1-Wire bus. The ROM data of the four devices is as shown:

ROM1 00110101...
ROM2 10101010...
ROM3 11110101...
ROM4 00010001...
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 DS2436
The search process is as follows:

1. The bus master begins the initialization sequence by issuing a reset pulse. The slave devices respond
by issuing simultaneous presence pulses.

2. The bus master will then issue the search ROM command on the 1-Wire bus.

3. The bus master reads a bit from the 1-Wire bus. Each device will respond by placing the value of the
first bit of their respective ROM data onto the 1-Wire bus. ROM1 and ROM4 will place a 0 onto the
1-Wire bus, i.e., pull it low. ROM2 and ROM3 will place a one onto the 1-Wire bus by allowing the
line to stay high. The result is a logical AND of all devices on the line, therefore the bus master sees a
0. The bus master reads another bit. Since the search ROM data command is being executed, all of the
devices on the 1-Wire bus respond to this second read by placing the complement of the first bit of
their respective ROM data onto the 1-Wire bus. ROM1 and ROM4 will place a 1 onto the 1-Wire,
allowing the line to stay high. ROM2 and ROM3 will place a 0 onto the 1-Wire; thus it will be pulled
low. The bus master again observes a 0 for the complement of the first ROM data bit. The bus master
has determined that there are some devices on the 1-Wire bus that have a 0 in the first position and
others that have a 1.

The data obtained from the two reads of the three-step routine have the following interpretations:

00 There are still devices attached which have conflicting bits in this position.

01 All devices still coupled have a 0 bit in this bit position.

10 All devices still coupled have a 1 bit in this bit position.

11 There are no devices attached to the 1-Wire bus.

4. The bus master writes a 0. This deselects ROM2 and ROM3 for the remainder of this search pass,
leaving only ROM1 and ROM4 connected to the 1-Wire bus.

5. The bus master performs two more reads and receives a 0 bit followed by a 1-bit. This indicates that
all devices still coupled to the bus have 0s as their second ROM data bit.

6. The bus master then writes a 0 to keep both ROM1 and ROM4 coupled.

7. The bus master executes two reads and receives two 0-bits. This indicates that both 1-bits and 0-bits
exist as the third bit of the ROM data of the attached devices.

8. The bus master writes a 0 bit. This deselects ROM1 leaving ROM4 as the only device still connected.

9. The bus master reads the remainder of the ROM bits for ROM4 and continues to access the part if
desired. This completes the first pass and uniquely identifies one part on the 1-Wire bus.

10. The bus master starts a new ROM search sequence by repeating steps 1 through 7.

11. The bus master writes a 1 bit. This deselects ROM4, leaving only ROM1 still coupled.

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 DS2436
12. The bus master reads the remainder of the ROM bits for ROM1 and communicates to the underlying
logic if desired. This completes the second ROM search pass, in which another of the ROMs was
found.

13. The bus master starts a new ROM search by repeating steps 1 through 3.

14. The bus master writes a 1 bit. This deselects ROM1 and ROM4 for the remainder of this search pass,
leaving only ROM2 and ROM3 coupled to the system.

15. The bus master executes two read time slots and receives two 0s.

16. The bus master writes a 0-bit. This deselects ROM3, and leaving only ROM2.

17. The bus master reads the remainder of the ROM bits for ROM2 and communicates to the underlying
logic if desired. This completes the third ROM search pass, in which another of the ROMs was found.

18. The bus master starts a new ROM search by repeating steps 13 through 15.

19. The bus master writes a 1 bit. This deselects ROM2, leaving only ROM3.

20. The bus master reads the remainder of the ROM bits for ROM3 and communicates to the underlying
logic if desired. This completes the fourth ROM search pass, in which the last of the ROMs was
found.

Note the following:

The bus master learns the unique ID number (ROM data pattern) of one 1-Wire device on each ROM
Search operation. The time required to derive the part’s unique ROM code is:

960 μs + (8 + 3 x 64) 61 μs = 13.16 ms

The bus master is therefore capable of identifying 75 different 1-Wire devices per second.

MEMORY FUNCTION COMMANDS

The following command protocols are summarized in Table 3.

PAGE 1 THROUGH PAGE 3 COMMANDS

Read Scratchpad [11h]
This command reads the contents of the scratchpad RAM on the DS2436. This command is followed by a
start byte address. After issuing this command and providing the start address, the user may begin reading
the data. The user may read 32 bytes of data through the end of each scratchpad space, with any reserved
data bits reading all logic 1s. If reading occurs through the end of a page, the Bus Master may issue eight
additional read time slots and the DS2436 will respond with an 8-bit CRC of all data bytes read from the
initial starting byte through the last byte of the page. After the CRC is received by the Bus Master, any
subsequent read time slots will appear as logical 1s until a reset pulse is issued.

Write Scratchpad [17h]

This command writes to the scratchpad RAM on the DS2436. This command is followed by a start byte
address. After issuing this command and providing the start address, the user may begin writing data to
the DS2436 scratchpad at the starting byte address through the end of the 32-byte scratchpad space.

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 DS2436
Copy SP1 to NV1 [22h]
This command copies the entire contents (24 bytes) of Scratchpad 1 (SP1) to its corresponding
nonvolatile memory (NV1). The EEPROM memory of the DS2436 cannot be written to directly by the
bus master; however, the scratchpad RAM may be copied to the EEPROM. This prevents accidental
overwriting of the EEPROM and allows the data to be written first to the scratchpad, where it can be read
back and verified before copying to the EEPROM. This command does not use a start address; the entire
contents of the scratchpad will be copied to the EEPROM. The NVB bit will be set when the copy is in
progress. NV1 is made with EEPROM type memory cells that will accept at least 50,000 changes.

Copy SP2 to NV2 [25h]

This command copies the entire contents (8 bytes) of SP2 (user bytes) to its corresponding nonvolatile
memory (NV2). This command does not use a start address; the entire contents of SP2 will be copied to
NV2. The NVB bit will be set when the copy is in progress. NV2 is made with EEPROM type memory
cells that will accept at least 50,000 changes.

Copy SP3 to SRAM [28h]

This command copies the entire contents (8 bytes) of SP3 to its corresponding SRAM. This command
does not use a start address; the entire contents of SP3 will be copied to the SRAM.

Copy NV1 to SP1 [71h]

This command copies the entire contents (24 bytes) of NV1 to its corresponding scratchpad RAM (SP1).
This command does not use a start address; the entire contents of NV1 will be copied to SP1. The
EEPROM of the DS2436 cannot be read directly by the bus master; however, the EEPROM may be
copied to the scratchpad RAM.

Copy NV2 to SP2 [77h]

This command copies the entire contents (8 bytes) of NV2 (user bytes) to its corresponding scratchpad
RAM (SP2). This command does not use a start address; the entire contents of NV2 will be copied to
SP2. The EEPROM of the DS2436 cannot be read directly by the bus master; however, the EEPROM
may be copied to the scratchpad RAM.

Copy SRAM to SP3 [7Ah]

This command copies the entire contents (8 bytes) of SRAM to its corresponding scratchpad RAM (SP3).
This command does not use a start address; the entire contents of SRAM will be copied to SP3. The
SRAM of the DS2436 cannot be read directly by the bus master; however, the SRAM may be copied to
the scratchpad RAM.

Lock NV1 [43h]

This command prevents copying SP1 to NV1. This is done as an added measure of data security,
preventing data from being changed inadvertently. NV1 may still be copied into SP1 while the part is
locked. This allows NV1 to be read at any time. However, NV1 cannot be written to through a Copy SP1
to NV1 command without first unlocking it .

Unlock NV1 [44h]

This command unlocks NV1, to allow copying SP1 into NV1. This is done as an added measure of data
security, preventing data from being changed inadvertently.

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 DS2436
PAGE 4 AND 5 COMMANDS
Convert T [D2h]
This command instructs the DS2436 to initiate a temperature conversion cycle. This sets the TB flag.
When the temperature conversion is done, the TB flag is reset and the temperature value is placed in the
Temperature Register. While a temperature conversion is taking place, all other memory functions are
still available for use, but the Temperature Register should not be read until the TB flag has been reset.

Convert V [B4h]
This command instructs the DS2436 to initiate a battery voltage analog-to-digital conversion cycle. This
sets the ADB flag. When the A/D conversion is done, the ADB flag is reset and the voltage value is
placed in the Voltage Register. While an A/D conversion is taking place, all other memory functions are
still available for use, but the Voltage Register should not be read until the ADB flag has been reset.

Read Registers [B2h]

This command reads the contents of the registers in Page 4 and 5. This command is followed by a start
byte address. After issuing this command and providing the start address, the user may begin reading the
data. The user may read data through the end of the register space (through address 78h in Page 4, address
83h in Page 5), after which the data read will be all logic 1s.

Increment Cycle [B5h]

This command increments the value in the Cycle Counter. This command does not use a start address; no
further data is required. Time between increments of the cycle counter should not be less than 10 ms.

Reset Cycle Counter [B8h]

This command is used to reset the Cycle Counter to 0, if desired.

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 DS2436
DS2436 COMMAND SET Table 3
1-WIRE BUS 1-WIRE BUS DATA
MASTER STATUS
AFTER ISSUING AFTER ISSUING
INSTRUCTION DESCRIPTION PROTOCOL PROTOCOL PROTOCOL

Reads bytes from 11<addr <read data>

Read Scratchpad RX
DS2436 Scratchpad (00h-5Fh)>
Writes bytes to DS2436 17h<addr
Write Scratchpad TX <write data>
Scratchpad 00h-5Fh)>
Copies entire contents of {NVB bit in Status
Copy SP1 to NV1 SP1 to NV1 22h Idle Register=1 until copy
complete(2-5 ms,typ)}
Copies entire contents of {NVB bit in Status
Copy to SP2 to NV2 SP2 to NV2 25h Idle Register=1 until copy
complete(2-5 ms,typ)}
Copies entire contents
Copy SP3 to SRAM 28h Idle Idle
to SP3 to SRAM
Copies entire contents
Copy NV1 to SP1 71h Idle Idle
of NV1 to SP1
Copies entire contents
Copy NV2 to SP2 77h Idle Idle
to NV2 to SP2
Copies entire contents
Copy SRAM to SP3 7Ah Idle Idle
of SRAM to SP3
Locks 24 bytes of SP1 {NVB bit in Status
Lock NV1 and NV1 from writing 43h Idle Register=1 until lock
complete(2-5 ms,typ)}
Unlocks 24 {NVB bit in Status
bytes of SP1 and NV1 Register=1 until
Unlock NV1 44h Idle
for writing unlock complete(2-5
ms,typ)}

Reads bytes from B2<addr

Temperature, Voltage, (60h-63h,
Read Registers RX <read data>
Status and ID Registers 77h-78h,
80h-83h)>
Resets cycle counter {NVB bit in Status
Reset Cycle Counter register to 0 B8h Idle Register=1 until reset
complete(2-5 ms,typ)}
Increments the value in {NVB bit in Status
Increment Cycle the cycle counter register Register=1 until
B5h Idle
Counter increment complete(2-
5 ms,typ)}
Initiates battery voltage {ADB bit in Status
Convert V A/D conversion B4h Idle Register = 1 until
conversion complete}
Initiates temperature {TB bit in Status
Convert T conversion D2h Idle Register = 1 until
conversion complete}

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 DS2436
NOTES:
1. Temperature conversion takes up to 10 ms.

2. A/D conversion takes up to 10 ms.

3. Temperature and A/D conversions cannot take place simultaneously.

I/O SIGNALING
The DS2436 requires strict protocols to insure data integrity. The protocol consists of several types of
signaling on one line: reset pulse, presence pulse, write 0, write 1, read 0, and read 1. All of these signals,
with the exception of the presence pulse, are initiated by the bus master.

The initialization sequence required to begin any communication with the DS2436 is shown in Figure 8.
A reset pulse followed by a presence pulse indicates the DS2436 is ready to send or receive data given the
correct ROM command and memory function command.

The bus master transmits (TX) a reset pulse (a low signal for a minimum of 480 μs). The bus master then
releases the line and goes into a receive mode (RX). The 1-Wire bus is pulled to a high state via the 5k
pullup resistor. After detecting the rising edge on the I/O pin, the DS2436 waits 15-60 μs and then
transmits the presence pulse (a low signal for 60-240 μs).

READ/WRITE TIME SLOTS

DS2436 data is read and written through the use of time slots to manipulate bits and a command word to
specify the transaction.

Write Time Slots

A write time slot is initiated when the host pulls the data line from a high logic level to a low logic level.
There are two types of write time slots: Write 1 time slots and Write 0 time slots. All write time slots
must be a minimum of 60 μs in duration with a minimum of a 1 μs recovery time between individual
write cycles.

The DS2436 samples the I/O line in a window from 15 μs to 60 μs after the I/O line falls. If the line is
high, a Write 1 occurs. If the line is low, a Write 0 occurs (see Figure 9).

For the host to generate a Write 1 time slot, the data line must be pulled to a logic low level and then
released, allowing the data line to pull up to a high level within 15 μs after the start of the write time slot.

For the host to generate a Write 0 time slot, the data line must be pulled to a logic low level and remain
low for the duration of the write time slot.

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 DS2436
Read Time Slots
The host generates read time slots when data is to be read from the DS2436. A read time slot is initiated
when the host pulls the data line from a logic high level to logic low level. The data line must remain at a
low logic level for a minimum of 1 μs; output data from the DS2436 is then valid for the next 14 μs
maximum. The host therefore must stop driving the I/O pin low in order to read its state 15 μs from the
start of the read slot (see Figure 9). By the end of the read time slot, the I/O pin will pull back high via the
external pullup resistor. All read time slots must be a minimum of 60 μs in duration with a minimum
recovery time of 1 μs between individual read slots.

Figure 10 shows that the sum of TINIT, TRC, and TSAMPLE must be less than 15 μs. Figure 11 shows that
system timing margin is maximized by keeping TINIT and TRC as small as possible and by locating the
master sample time towards the end of the 15 μs period.

INITIALIZATION PROCEDURE “RESET AND PRESENCE PULSES” Figure 8

LINE TYPE LEGEND:

Bus master active low DS2436 active low

Both bus master and

DS2436 active low Resistor pullup

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 DS2436
READ/WRITE TIMING DIAGRAM Figure 9

LINE TYPE LEGEND:

Bus master active low DS2436 active low

Both bus master and

DS2436 active low Resistor pullup

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 DS2436
DETAILED MASTER READ “1” TIMING Figure 10

RECOMMENDED MASTER READ “1” TIMING Figure 11

LINE TYPE LEGEND:

Bus master active low DS2436 active low

Both bus master and

DS2436 active low Resistor pullup

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 DS2436
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD, Relative to Ground -0.3V to +12V
Voltage on any other pin relative to Ground -0.3V to +7V
Operating Temperature -40°C to +85°C
Storage Temperature -55°C to +125°C
Soldering Temperature 260°C for 10 seconds

∗ This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS

(-40°C to +85°C; VDD =2.4V to 10.0V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Supply Voltage VDD 2.4 10 V
Data Pin DQ -0.3 +5.5 V

DC ELECTRICAL CHARACTERISTICS (-40°C to +85°C; VDD =2.4V to 10.0V)

PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Temperature Accuracy
±2 °C
(=TACTUAL -TMEASURED)
Input Logic High VIH 2.0 5.5 V
Input Logic Low VIL -0.3 +0.5 V 3
Output Sink Current IL VDQ=0.4V -4.0 mA
Standby Current Standby 5 μA
Active
(Temperature,
100 μA 1
Voltage
IDD
Conversions)
Active
(EEPROM 1 mA
writes)
Input Resistance DQ line in a
RI high impedance 500 kΩ
state and IDQ =0

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 DS2436
BATTERY VOLTAGE MONITOR (-40°C to +85°C; VDD =2.4V to 10.0V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Resolution 10 bits
Input Voltage Range 0 10.0 V 2
Total Error 2.4V≤ VDD ≤
±10 ±50 mV
6V
Conversion Time 10 ms
No Missing Code
-40 +85 °C
Temperature Range
Monotonicity Guaranteed

AC ELECTRICAL CHARACTERISTICS:
1-WIRE INTERFACE (-40°C to +85°C; VDD =2.4V to 10.0V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Temperature Conversion Time tCONV 5 10 ms
Time Slot tSLOT 60 120 μs
Recovery Time tREC 1 μs
Write 0 Low Time tLOW0 60 120 μs
Write 1 Low Time tLOW1 1 15 μs
Read Data Valid tRDV 15 μs
Reset Time High tRSTH 480 μs
Reset Time Low tRSTL 480 960 μs
Presence Detect High tPDHIGH 15 60 μs
Presence Detect Low tPDLOW 60 240 μs
Capacitance CIN/OUT 25 pF

NOTES:
1. Voltage A/D conversions and temperature conversions may not take place simultaneously.

2. Voltage may be measured below 2.4 volts, but accuracy degrades in a manner to be determined by
characterization.

3. VIL_MAX = 0.45V when VDD < 3.3V and TA ≤ +25°C

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 DS2436
1-WIRE WRITE 1 TIME SLOT

1-WIRE WRITE 0 TIME SLOT

1-WIRE READ 0 TIME SLOT

1-WIRE RESET PULSE

1-WIRE PRESENCE DETECT

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