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    WWW - Iscsemi.cn: Isc 2SA1441

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    che-ahmad-majdi-7191
    The 2SA1441 is an isc Silicon PNP Power Transistor with the following key specifications: - Collector-Emitter sustaining voltage of -60V minimum. - High DC current gain of 100 minimum at -1A collector current and -2V collector-emitter voltage. - Low saturation voltage of 0.3V maximum at -3A collector current and -0.15A base current. It is ideal for use as a driver in DC/DC converters and actuators due to its high hFE at low saturation voltage.

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    WWW - Iscsemi.cn: Isc 2SA1441

    Uploaded by

    che-ahmad-majdi-7191
    149 views2 pages
    The 2SA1441 is an isc Silicon PNP Power Transistor with the following key specifications: - Collector-Emitter sustaining voltage of -60V minimum. - High DC current gain of 100 minimum at -1A collector current and -2V collector-emitter voltage. - Low saturation voltage of 0.3V maximum at -3A collector current and -0.15A base current. It is ideal for use as a driver in DC/DC converters and actuators due to its high hFE at low saturation voltage.

    Original Title

    A1441-INCHANGE

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    The 2SA1441 is an isc Silicon PNP Power Transistor with the following key specifications: - Collector-Emitter sustaining voltage of -60V minimum. - High DC current gain of 100 minimum at -1A collector current and -2V collector-emitter voltage. - Low saturation voltage of 0.3V maximum at -3A collector current and -0.15A base current. It is ideal for use as a driver in DC/DC converters and actuators due to its high hFE at low saturation voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    149 views2 pages

    WWW - Iscsemi.cn: Isc 2SA1441

    Uploaded by

    che-ahmad-majdi-7191
    The 2SA1441 is an isc Silicon PNP Power Transistor with the following key specifications: - Collector-Emitter sustaining voltage of -60V minimum. - High DC current gain of 100 minimum at -1A collector current and -2V collector-emitter voltage. - Low saturation voltage of 0.3V maximum at -3A collector current and -0.15A base current. It is ideal for use as a driver in DC/DC converters and actuators due to its high hFE at low saturation voltage.

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    INCHANGE Semiconductor isc Product Specification

    isc Silicon PNP Power Transistor 2SA1441

    DESCRIPTION
    ·Collector-Emitter Sustaining Voltage-
    : VCEO(SUS)= -60V(Min)
    ·High DC Current Gain-
    : hFE= 100(Min)@ (VCE= -2V , IC= -1A)
    ·Low Saturation Voltage-
    : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)
    B

    APPLICATIONS
    ·This type of power transistor is developed for high-speed
    switching and features a high hFE at low VCE(sat),which is

    n
    ideal for use as a driver in DC/DC converters and actuators.

    m i. c
    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    s c s e
    .i
    ww
    SYMBOL PARAMETER VALUE UNIT

    w
    VCBO Collector-Base Voltage -100 V

    VCEO Collector-Emitter Voltage -60 V

    VEBO Emitter-Base Voltage -7.0 V

    IC Collector Current-Continuous -5.0 A

    ICM Collector Current-Pulse -10 A

    IB B Base Current-Continuous -2.5 A

    Total Power Dissipation @TC=25℃ 25


    PT W
    Total Power Dissipation @Ta=25℃ 2.0

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature -55~150 ℃

    isc Website：www.iscsemi.cn
    INCHANGE Semiconductor isc Product Specification

    isc Silicon PNP Power Transistor 2SA1441

    ELECTRICAL CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -3.0A ; IB= -0.3A, L= 1mH -60 V

    IC= -3.0A ; IB1=-IB2= -0.3A,


    VCEX(SUS) Collector-Emitter Sustaining Voltage -60 V
    VBE(OFF)=1.5V, L=180μH,clamped

    VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A


    B -0.3 V

    VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.2A


    B -0.5 V

    VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A


    B -1.2 V

    VBE(sat)-2 Base-Emitter Saturation Voltage IC= -4A; IB= -0.2A


    B -1.5 V

    ICBO Collector Cutoff Current VCB= -60V ; IE=0 -10 μA

    ICER Collector Cutoff Current

    i. c n
    VCE= -60V ; RBE= 50Ω,Ta=125℃ -1.0 mA

    s em
    VCE= -60V; VBE(off)= -1.5V -10 μA

    c
    ICEX Collector Cutoff Current

    s
    VCE= -60V; VBE(off)= -1.5V,Ta=125℃ -1.0 mA

    .i
    μA

    w
    IEBO Emitter Cutoff Current VEB= -5V; IC=0 -10

    w w
    hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V 100

    hFE-2 DC Current Gain IC= -1.0A ; VCE= -2V 100 400

    hFE-3 DC Current Gain IC= -3.0A ; VCE= -2V 60

    COB Output Capacitance IE=0; VCB= -10V;f= 1.0MHz 130 pF

    fT Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V 80 MHz

    Switching times

    ton Turn-on Time 0.3 μs

    IC= -3.0A ,RL= 17Ω,


    tstg Storage Time 1.5 μs
    IB1= -IB2= -0.15A,VCC≈-50V

    tf Fall Time 0.3 μs

    ‹ hFE-2 Classifications
    M L K

    100-200 150-300 200-400

    isc Website：www.iscsemi.cn 2

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