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    2SA1746

    Uploaded by

    Alessandro José Silva
    The document describes the INCHANGE Semiconductor 2SA1746 silicon PNP power transistor. It has a low collector saturation voltage of -0.5V max at -5A collector current and good linearity of hFE. It is designed for applications such as chopper regulators, switches, and general purpose use. The document lists the transistor's absolute maximum ratings including collector-emitter breakdown voltage of -50V, collector current of -12A continuous and -20A peak, and junction temperature of 150°C. It also provides typical electrical characteristics including collector-emitter saturation voltage, DC current gain, output capacitance, and switching times.

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    2SA1746

    Uploaded by

    Alessandro José Silva
    16 views2 pages
    The document describes the INCHANGE Semiconductor 2SA1746 silicon PNP power transistor. It has a low collector saturation voltage of -0.5V max at -5A collector current and good linearity of hFE. It is designed for applications such as chopper regulators, switches, and general purpose use. The document lists the transistor's absolute maximum ratings including collector-emitter breakdown voltage of -50V, collector current of -12A continuous and -20A peak, and junction temperature of 150°C. It also provides typical electrical characteristics including collector-emitter saturation voltage, DC current gain, output capacitance, and switching times.

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    The document describes the INCHANGE Semiconductor 2SA1746 silicon PNP power transistor. It has a low collector saturation voltage of -0.5V max at -5A collector current and good linearity of hFE. It is designed for applications such as chopper regulators, switches, and general purpose use. The document lists the transistor's absolute maximum ratings including collector-emitter breakdown voltage of -50V, collector current of -12A continuous and -20A peak, and junction temperature of 150°C. It also provides typical electrical characteristics including collector-emitter saturation voltage, DC current gain, output capacitance, and switching times.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    16 views2 pages

    2SA1746

    Uploaded by

    Alessandro José Silva
    The document describes the INCHANGE Semiconductor 2SA1746 silicon PNP power transistor. It has a low collector saturation voltage of -0.5V max at -5A collector current and good linearity of hFE. It is designed for applications such as chopper regulators, switches, and general purpose use. The document lists the transistor's absolute maximum ratings including collector-emitter breakdown voltage of -50V, collector current of -12A continuous and -20A peak, and junction temperature of 150°C. It also provides typical electrical characteristics including collector-emitter saturation voltage, DC current gain, output capacitance, and switching times.

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    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
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    INCHANGE Semiconductor Product Specification

    Silicon PNP Power Transistor 2SA1746

    DESCRIPTION
    ·Low Collector Saturation Voltage
    :VCE(sat)= -0.5(V)(Max)@IC= -5A
    ·Good Linearity of hFE

    APPLICATIONS
    ·Designed for chopper regulator, switch and general
    purpose applications

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    SYMBOL PARAMETER VALUE UNIT

    VCBO
    Collector-Base Voltage -70 V

    VCEO
    Collector-Emitter Voltage -50 V

    VEBO
    Emitter-Base Voltage -6 V

    IC Collector Current-Continuous -12 A

    ICM
    Collector Current-Peak -20 A

    IB B Base Current-Continuous -4 A

    Collector Power Dissipation


    PC 60 W
    @ TC=25℃

    TJ Junction Temperature 150 ℃

    Storage Temperature Range -55~150 ℃


    Tstg
    INCHANGE Semiconductor Product Specification

    Silicon PNP Power Transistor 2SA1746

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO
    Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -50 V

    Collector-Emitter Saturation Voltage IC= -5A; IB= -80mA -0.5 V


    VCE(sat)
    B

    Base-Emitter Saturation Voltage IC= -5A; IB= -80mA -1.2 V


    VBE(sat)
    B

    ICBO
    Collector Cutoff Current VCB= -70V ; IE= 0 -10 μA

    IEBO
    Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA

    hFE
    DC Current Gain IC= -5A ; VCE= -1V 50

    COB
    Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 400 pF

    fT Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V 25 MHz

    Switching Times

    Turn-on Time 0.5 μs


    ton

    IC= -5A , RL= 4Ω,


    Storage Time IB1= -IB2= -80mA,VCC= -20V 0.6 μs
    tstg

    tf Fall Time 0.3 μs

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