MULTIPREP 200

ADHESION PROMOTION

November 2016, rev 2

Methods of Copper Preparation

Brush Hydrogen Peroxide/Acid

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Mechanism of Etching

 Etch Attack of Persulfate/Acid Solutions.

 Etch Attack of Hydrogen Peroxide/Acid Solutions

 Etch Attack of a non peroxide etch

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Preclean Options

 Coreclean AT – sulfuric acid based with antitarnish, widely used for non-
etching applications such as reverse treat inner layer

 MacGleam AT – peroxide sulfuric acid based microetch with very wide

processing speed and stabilized etch rate

 MultiPrep – a non-peroxide etch designed to produce a very rough surface

for superior solder mask adhesion even through aggressive final finish
plating such as ENIG. Impervious to plated crystal structure

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 What is MULTIPREP 200?

• MacDermid Enthone MultiPrep 200 process is a uniquely formulated system

providing excellent adhesion to solder mask through HASL, and all other
alternative final finishes (ENIG, ENEPIG, Immersion Tin, Immersion Silver, and
OSP).
• Adhesion is achieved through deeply etching the copper resulting in an
intergranular modified topography.
• The resulting surface provides a uniform etched appearance on all types of
copper surfaces, including electrolytic pulse plated panels (PPR).

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Functions MULTIPREP 200?

 Removes oxides from the surface.

 Etches copper at reliable and steady rate.

 Creates an adherent micro-etched topography of the copper surface.

 Provides an adhesion bonding mechanism for solder mask.

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Process Sequence

Module # Process Time (sec) Temp

1 Load

2 Peroxide/sulfuric acid or Acid 20 (30oC)

Cleaner (Optional)
3 (3) Cascade Water Rinse 15 Ambient

4 MULTIPREP 200 60 (30oC)

5 Water Rinse 15 Ambient

6 Hydrochloric Acid Post Treat 20 (27oC)

7 (3) Cascade Rinse 20 Ambient

(1) DI Rinse
8 Dryer (60oC)

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Operating Conditions

 Solutions Function
• MAKE UP 100% by vol. Start up process solution
• REPLENISHER 100% by vol. Replenishing solution
• ACID REPLENISHER 100% by vol. Acid adjustment solution

 Component Range Optimum

• Acidity: 2-6% by vol. 3%
• Anion Solubilizer 30-55 g/L 35g/L
• Copper: 20 - 40 g/L 30 g/L
• Temperature: 25 - 35 C 30 C
• Time: 30 - 90 sec. 60 sec.
• Specific Gravity: 1.122-1.142 1.135
• Etch rate: 0.375 – 1.25 µm 0.625 µm
• HCl post rinse 9-11% by vol. 10%

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Specific Gravity

Correlation when setting the specific gravity

• Setpoint with the operating copper capacity for feed-and-bleed
• Control with specific gravity controller

MultiPrep 200
1.16
Specific Gravity
1.155
1.15
1.145
1.14
1.135
1.13
1.125
1.12
1.115
1.11

10 20 30 40 50
g/L Copper

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Usage Guide

Etch Rate Cu Capacity Surf Ft2 Repl.

(µ”) (g/L) (Cu/Gal) (mL/Surf Ft2 Cu)
0.50 20 180 21.0
0.50 30 270 14.0
0.50 40 360 10.5
0.75 20 120 31.5
0.75 30 180 21.0
0.75 40 240 16.0

Formula :
ssft copper / gal. Repl. = Copper Capacity (g/L) X 180
Rate (µm) x 40

Replenisher mL / ssft Cu = 3785 mL

ssft Cu / gal. Repl.
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Microetch Rate

Etch Rate vs. Copper Concentration at 28 ºC, Dwell Time at 36s

1.3

Micro etch amount (micrometer)

1.2

1.1

0.9

0.8

0.7

0.6
20 22 24 26 28 30

Copper concentration (g/L)

With Feed/Bleed, as copper concentration increases, anion concentration decreases,

which balances the micro etch rate of MULTIPREP 200.

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Microetch Rate

 Bath Temperature has a linear DESIGN-EXPERT Plot etch rate

effect on micro etch rate etch rate
2.30

X = A: Temperature
Y = C: M4

 Higher temperatures result in Design Points

2.05 1.18417

higher micro etch rate Actual Factor

B: M3 = 1.80


3

C: M4
0.849044 0.932826 1.01661 1.10039
Spray pressure (M3 and M4, 1.80

bar) had less effect on micro

etch rate 1.55

 Dwell time was held constant

at 35 seconds 1.30
25.00 27.50 30.00 32.50 35.00

A: T emperature

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MULTIPREP 200 Surface Roughness

 30°C  25°C
• Etch amount at 0.93 µm • Etch amount at 0.735 µm
• Ra = 0.31 µm. • Ra = 0.331 µm.

Panels processed in lab scale, DC plated copper surface

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MULTIPREP 200: Customer Results

 Dryfilm:
• Initial test, 55 of Dry Film test panels processed through the MULTIPREP 200
• Total of 28 defects (10 opens, 10 shorts and 8 nicks)
• All Open defects were caused by scratches due to handling
• All Short defects were caused by poor vacuum during exposure
• No MutiPrep 200 related defects
• The panels processed by chemicals from supplier A could not be scanned by AOI due to
too many false defects

 Two lines are using MultiPrep 200 for dryfilm production

 The yield was improved more than 10% (FPY)

 Allowed customer to increase capability from 4 mil to 3 mil work

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MULTIPREP 200: Customer Results

 30 panels processed through solder mask, then immersion tin process

• There were no SM adhesion failure or plating issues
• All samples passed adhesion tape testing
• HASL New and HASL rework panels were processed successfully through SM
and HASL

Sample Bath Temp. Conveyor Speed Etch Rate Roughness

(C) (m/min.) (µm) (RA, µm)
1 26 2.50 0.867 0.356
2 25.5 2.75 0.751 0.338
2B 26 2.20 0.931 0.355
3 25.5 2.75 0.766 0.338
3B 25.5 3.25 0.641 0.331

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MULTIPREP 200: Customer Results

 SEM: Sample 1  SEM: Sample 2

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MULTIPREP 200: Customer Results

Hole plug applications

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 MULTIPREP 200: Customer Results

Sample Test SPEC MULTIPREP 200 Supplier A Supplier B

1 Ra (nm) 300≤ 227.1 274.0 181.0

2 Rz (µm) ≥5 3.3 3.6 2.8

Peel Strength
≥0.4 0.69 0.63 0.62
(Kg/cm2) As Is
3
Peel Strength
≥0.4 0.74 0.71 0.67
(Kg/cm2) 6X Reflow

Etch amount at 0.8µm

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MULTIPREP 200 SUMMARY

 High copper capacity - Copper 20-40 g/L

 Wide operation window - Etching rate could be easily controlled
 Uniform etched surface for both DC and pulse plate - Cosmetically
desired matte pink color, a deeply etched copper intergranular modified
topography.
 Excellent adhesion - High reliable bond to solder mask through all final
finish applications
 Non-chelated Chemistry - Low waste treatment cost
 Feed & Bleed, automatic control capability - Stable process, uniform
application

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