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    2N2219 PDF

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    OMAR RAMIREZ GUERRERO
    These transistors are designed for high-speed switching applications with collector currents up to 500 mA. They feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in TO-39 and TO-18 metal cases. Absolute maximum ratings and electrical characteristics are provided.

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    2N2219 PDF

    Uploaded by

    OMAR RAMIREZ GUERRERO
    34 views5 pages
    These transistors are designed for high-speed switching applications with collector currents up to 500 mA. They feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in TO-39 and TO-18 metal cases. Absolute maximum ratings and electrical characteristics are provided.

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    These transistors are designed for high-speed switching applications with collector currents up to 500 mA. They feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in TO-39 and TO-18 metal cases. Absolute maximum ratings and electrical characteristics are provided.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    34 views5 pages

    2N2219 PDF

    Uploaded by

    OMAR RAMIREZ GUERRERO
    These transistors are designed for high-speed switching applications with collector currents up to 500 mA. They feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in TO-39 and TO-18 metal cases. Absolute maximum ratings and electrical characteristics are provided.

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    2N2218-2N2219

    2N2221-2N2222

    HIGH-SPEED SWITCHES

    DESCRIPTION
    The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
    con planar epitaxial NPN transistors in Jedec
    TO-39 (for 2N2218 and 2N2219) and in Jedec
    TO-18 (for 2N2221 and 2N2222) metal cases. They
    are designed for high-speed switching applications
    at collector currents up to 500 mA, and feature use-
    ful current gain over a wide range of collector cur-
    rent, low leakage currents and low saturation volt-
    ages.
    2N2218/2N2219 approved to CECC 50002-
    TO-39 TO-18
    100, 2N2221/2N2222 approved to CECC
    50002-101 available on request.

    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    V CBO Collector-base Voltage (I E = 0) 60 V
    V CEO Collector-emitter Voltage (I B = 0) 30 V
    V EBO Emitter-base Voltage (I C = 0) 5 V
    IC Collector Current 0.8 A
    Pt o t Total Power Dissipation at T amb ≤ 25 °C
    for 2N2 21 8 and 2 N22 19 0.8 W
    for 2N2 22 1 and 2 N22 22 0.5 W
    at T c as e ≤ 25 °C
    for 2N2 21 8 and 2 N22 19 3 W
    for 2N2 22 1 and 2 N22 22 1.8 W
    T st g Storage Temperature – 65 to 200 °C
    Tj Junction Temperature 175 °C

    January 1989 1/5


    2N2218-2N2219-2N2221-2N2222

    THERMAL DATA
    2 N22 18 2N 222 1
    2 N22 19 2N 222 2
    R t h j- cas e Thermal Resistance Junction-case Max 50 °C/W 83.3 °C/W
    R t h j-amb Thermal Resistance Junction-ambient Max 187.5 °C/W 300 °C/W

    ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    I CBO Collector Cutoff Current V CB = 50 V 10 nA
    (I E = 0) V CB = 50 V T am b = 150 °C 10 µA
    I E BO Emitter Cutoff Current
    VE B = 3 V 10 nA
    (I C = 0)
    V ( BR) Colllector-base Breakdown
    CBO
    I C = 10 µA 60 V
    Voltage (I E = 0)
    V (BR)CE O * Collector-emitter Breakdown
    I C = 10 mA 30 V
    Voltage (I B = 0)
    V ( BR) Emittter-base Breakdown
    EBO
    I E = 10 µA 5 V
    Voltage (I C = 0)
    V CE (s at )* Collector-emitter Saturation I C = 150 mA I B = 15 mA 0.4 V
    Voltage I C = 500 mA I B = 50 mA 1.6 V
    VB E (s at )* Base-emitter Saturation I C = 150 mA I B = 15 mA 1.3 V
    Voltage I C = 500 mA I B = 50 mA 2.6 V
    h F E* DC Current Gain for 2N 221 8 and 2N 22 21
    I C = 0.1 mA V CE = 10 V 20
    I C = 1 mA V CE = 10 V 25
    I C = 10 mA V CE = 10 V 35
    I C = 150 mA V CE = 10 V 40 120
    I C = 500 mA V CE = 10 V 20
    I C = 150 mA V CE = 1 V 20
    for 2N 221 9 and 2N 22 22
    I C = 0.1 mA V CE = 10 V 35
    I C = 1 mA V CE = 10 V 50
    I C = 10 mA V CE = 10 V 75
    I C = 150 mA V CE = 10 V 100 300
    I C = 500 mA V CE = 10 V 30
    I C = 150 mA V CE = 1 V 50
    fT Transition Frequency I C = 20 mA
    V CE = 20 V 250 MHz
    f = 100 MHz
    C CBO Collector-base Capacitance IE = 0
    V CB = 10 V 8 pF
    f = 100 kHz
    R e (h ie ) Real Part of Input I C = 20 mA
    V CE = 20 V 60 Ω
    Impedance f = 300 MHz
    * Pulsed : pulse duration = 300 µs, duty cycle = 1 %.

    2/5
    2N2218-2N2219-2N2221-2N2222

    TO-18 MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.

    A 12.7 0.500

    B 0.49 0.019

    D 5.3 0.208

    E 4.9 0.193

    F 5.8 0.228

    G 2.54 0.100

    H 1.2 0.047

    I 1.16 0.045

    L 45o 45o

    D A
    G

    I
    H
    E
    F

    L
    B

    0016043

    3/5
    2N2218-2N2219-2N2221-2N2222

    TO39 MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.

    A 12.7 0.500

    B 0.49 0.019

    D 6.6 0.260

    E 8.5 0.334

    F 9.4 0.370

    G 5.08 0.200

    H 1.2 0.047

    I 0.9 0.035

    L 45o (typ.)

    D A
    G

    I
    H
    E
    F

    L
    B

    P008B

    4/5
    2N2218-2N2219-2N2221-2N2222

    Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
    consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
    license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
    in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
    SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
    written approval of SGS-THOMSON Microelectonics.

     1994 SGS-THOMSON Microelectronics - All Rights Reserved

    SGS-THOMSON Microelectronics GROUP OF COMPANIES


    Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
    Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

    5/5

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