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    2N2219A 2N2222A: High Speed Switches

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    Gabriel Barbosa Paganini
    This document provides specifications for the 2N2219A and 2N2222A silicon planar epitaxial NPN transistors. These transistors are designed for high-speed switching applications up to 500mA of collector current. The document includes maximum ratings, thermal characteristics, electrical characteristics tables with parameters like current gain, breakdown voltages, saturation voltages, and switching times.

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    © All Rights Reserved
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    2N2219A 2N2222A: High Speed Switches

    Uploaded by

    Gabriel Barbosa Paganini
    55 views4 pages
    This document provides specifications for the 2N2219A and 2N2222A silicon planar epitaxial NPN transistors. These transistors are designed for high-speed switching applications up to 500mA of collector current. The document includes maximum ratings, thermal characteristics, electrical characteristics tables with parameters like current gain, breakdown voltages, saturation voltages, and switching times.

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    2N2222

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    This document provides specifications for the 2N2219A and 2N2222A silicon planar epitaxial NPN transistors. These transistors are designed for high-speed switching applications up to 500mA of collector current. The document includes maximum ratings, thermal characteristics, electrical characteristics tables with parameters like current gain, breakdown voltages, saturation voltages, and switching times.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    55 views4 pages

    2N2219A 2N2222A: High Speed Switches

    Uploaded by

    Gabriel Barbosa Paganini
    This document provides specifications for the 2N2219A and 2N2222A silicon planar epitaxial NPN transistors. These transistors are designed for high-speed switching applications up to 500mA of collector current. The document includes maximum ratings, thermal characteristics, electrical characteristics tables with parameters like current gain, breakdown voltages, saturation voltages, and switching times.

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    © All Rights Reserved
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    2N2219A

     2N2222A

    HIGH SPEED SWITCHES

    DESCRIPTION
    The 2N2219A and 2N2222A are silicon planar
    epitaxial NPN transistors in Jedec TO-39 (for
    2N2219A) and in Jedec TO-18 (for 2N2222A)
    metal case. They are designed for high speed
    switching application at collector current up to
    500mA, and feature useful current gain over a
    wide range of collector current, low leakage
    currents and low saturation voltage.

    2N2219A approved to CECC 50002-100,


    2N2222A approved to CECC 50002-101 TO-18 TO-39
    available on request.

    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symb ol Parameter Value Un it
    V CBO Collector-Base Voltage (IE = 0) 75 V
    V CEO Collector-Emitter Voltage (IB = 0) 40 V
    V EBO Emitter-Base Voltage (I C = 0) 6 V
    IC Collector Current 0.8 A
    P tot T otal Dissipation at Tamb ≤ 25 C o

    for 2N2219A 0.8 W


    for 2N2222A 0.5 W
    at T ca se ≤ 25 oC
    for 2N2219A 3 W
    for 2N2222A 1.8 W
    o
    T s tg Storage T emperature -65 to 200 C
    o
    Tj Max. Operating Junction Temperature 175 C

    June 1999 1/8


    2N2219A/2N2222A

    THERMAL DATA
    TO-39 T O-18
    o
    R thj -case Thermal Resistance Junction-Case Max 50 83.3 C/W
    o
    R thj -amb Thermal Resistance Junction-Ambient Max 187.5 300 C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
    I CBO Collector Cut-off V CB = 60 V 10 nA
    Current (IE = 0) V CB = 60 V T case = 150 o C 10 µA
    I CEX Collector Cut-off V CE = 60 V 10 nA
    Current (VBE = -3V)
    I BEX Base Cut-off Current V CE = 60 V 20 nA
    (V BE = -3V)
    IEBO Emitter Cut-off Current V EB = 3 V 10 nA
    (I C = 0)
    V (BR) CBO ∗ Collector-Base I C = 10 µA 75 V
    Breakdown Voltage
    (I E = 0)
    V (BR) CEO ∗ Collector-Emitt er I C = 10 mA 40 V
    Breakdown Voltage
    (I B = 0)
    V (BR) EBO ∗ Emitter-Base I E = 10 µA 6 V
    Breakdown Voltage
    (I C = 0)
    V CE(sat) ∗ Collector-Emitt er I C = 150 mA I B = 15 mA 0.3 V
    Saturation Voltage I C = 500 mA I B = 50 mA 1 V
    V BE(sat) ∗ Base-Emitter I C = 150 mA I B = 15 mA 0.6 1.2 V
    Saturation Voltage I C = 500 mA I B = 50 mA 2 V
    h FE∗ DC Current G ain I C = 0.1 mA V CE = 10 V 35
    I C = 1 mA V CE = 10 V 50
    I C = 10 mA V CE = 10 V 75
    I C = 150 mA V CE = 10 V 100 300
    I C = 500 mA V CE = 10 V 40
    I C = 150 mA V CE =1V 50
    I C = 10 mA V CE = 10 V
    T amb = -55 oC 35
    h fe ∗ Small Signal Current I C = 1 mA V CE = 10 V f = 1KHz 50 300
    Gain I C = 10 mA V CE = 10 V f = 1KHz 75 375
    fT Transition Frequency I C = 20 mA V CE = 20 V 300 MHz
    f = 100 MHz
    C EBO Emitter Base IC = 0 V EB = 0.5 V f = 100KHz 25 pF
    Capacitance
    C CBO Collector Base IE = 0 VCB = 10 V f = 100 KHz 8 pF
    Capacitance
    R e (hie) Real Part of Input I C = 20 mA V CE = 20 V 60 Ω
    Impedance f = 300MHz
    ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %

    2/8
    2N2219A/2N2222A

    ELECTRICAL CHARACTERISTICS (continued)


    Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
    NF Noise Figure I C = 0.1 mA V CE = 10 V 4 dB
    f = 1KHz R g = 1KΩ
    hie Input Impedance I C = 1 mA V CE = 10 V 2 8 kΩ
    I C = 10 mA VCE = 10 V 0.25 1.25 kΩ
    h re Reverse Voltage Ratio I C = 1 mA V CE = 10 V 8 10 -4
    I C = 10 mA VCE = 10 V 4 10 -4
    h oe Output Admittance I C = 1 mA V CE = 10 V 5 35 µS
    I C = 10 mA VCE = 10 V 25 200 µS
    t d ∗∗ Delay Time V CC = 30 V IC = 150 mA 10 ns
    I B1 = 15 mA VBB = -0.5 V
    t r∗∗ Rise Time V CC = 30 V IC = 150 mA 25 ns
    I B1 = 15 mA VBB = -0.5 V
    t s ∗∗ Storage T ime V CC = 30 V I C = 150 mA 225 ns
    I B1 = -IB2 = 15 mA
    t f ∗∗ Fall T ime V CC = 30 V I C = 150 mA 60 ns
    I B1 = -IB2 = 15 mA
    r bb ’ C b’ c Feedback Time I C = 20 mA VCE = 20 V 150 ps
    Constant f = 31.8MHz
    ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
    ∗∗ See test circuit

    3/8
    2N2219A/2N2222A

    Normalized DC Current Gain. Collector-emitter Saturation Voltage.

    Contours of Constant Narrow Band Noise Figure. Switching Time vs. Collector Current.

    4/8

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