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    ST2001HI: High Voltage Fast-Switching NPN Power Transistor

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    gilberto gutierrez
    This document provides information on the ST2001HI high voltage fast-switching NPN power transistor. Key details include that it uses diffused collector technology for stable operation, has a fully insulated package for easy mounting, high voltage and switching speed capabilities, tighter hfe control, and improved ruggedness. Electrical and thermal characteristics and maximum ratings are provided along with mechanical dimensions and test circuits.

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    © All Rights Reserved
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    ST2001HI: High Voltage Fast-Switching NPN Power Transistor

    Uploaded by

    gilberto gutierrez
    355 views6 pages
    This document provides information on the ST2001HI high voltage fast-switching NPN power transistor. Key details include that it uses diffused collector technology for stable operation, has a fully insulated package for easy mounting, high voltage and switching speed capabilities, tighter hfe control, and improved ruggedness. Electrical and thermal characteristics and maximum ratings are provided along with mechanical dimensions and test circuits.

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    This document provides information on the ST2001HI high voltage fast-switching NPN power transistor. Key details include that it uses diffused collector technology for stable operation, has a fully insulated package for easy mounting, high voltage and switching speed capabilities, tighter hfe control, and improved ruggedness. Electrical and thermal characteristics and maximum ratings are provided along with mechanical dimensions and test circuits.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    355 views6 pages

    ST2001HI: High Voltage Fast-Switching NPN Power Transistor

    Uploaded by

    gilberto gutierrez
    This document provides information on the ST2001HI high voltage fast-switching NPN power transistor. Key details include that it uses diffused collector technology for stable operation, has a fully insulated package for easy mounting, high voltage and switching speed capabilities, tighter hfe control, and improved ruggedness. Electrical and thermal characteristics and maximum ratings are provided along with mechanical dimensions and test circuits.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    You are on page 1of 6

    www.DataSheet4U.

    com

     ST2001HI
    HIGH VOLTAGE FAST-SWITCHING
    NPN POWER TRANSISTOR
    ■ NEW SERIES, ENHANCHED
    PERFORMANCE
    ■ FULLY INSULATED PACKAGE FOR EASY
    MOUNTING
    ■ HIGH VOLTAGE CAPABILITY
    ■ HIGH SWITCHING SPEED
    ■ TIGTHER hfe CONTROL
    ■ IMPROVED RUGGEDNESS
    3
    2
    APPLICATIONS: 1
    ■ HORIZONTAL DEFLECTION FOR COLOR
    TV AND MONITOR
    ISOWATT218
    DESCRIPTION
    The ST2001HI is manufactured using Diffused
    Collector technology for more stable operation
    Vs base drive circuit variations resulting in very
    low worst case dissipation.
    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Uni t
    V CBO Collector-Base Voltage (I E = 0) 1500 V
    V CEO Collector-Emitter Voltage (IB = 0) 600 V
    V EBO Emitter-Base Voltage (IC = 0) 7 V
    IC Collector Current 10 A
    I CM Collector Peak Current (tp < 5 ms) 20 A
    IB Base Current 7 A
    P t ot Total Dissipation at Tc = 25 o C 55 W
    o
    T stg St orage Temperature -65 to 150 C
    o
    Tj Max. Operating Junction Temperature 150 C

    November 1999 1/6


    www.DataSheet4U.com

    ST2001HI

    THERMAL DATA
    o
    R t hj-ca se Thermal Resistance Junction-case Max 2.3 C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
    I CES Collector Cut-off V CE = 1500 V 1 mA
    o
    Current (V BE = 0) V CE = 1500 V T j = 125 C 2 mA
    I EBO Emitter Cut-off Current V EB = 7 V 1 mA
    (I C = 0)
    V CEO(sus )∗ Collector-Emitter I C = 100 mA L = 25 mH 600 V
    Sustaining Voltage
    (I B = 0)
    V CE(sat )∗ Collector-Emitter IC = 5 A IB = 1.25 A 1.5 V
    Saturation Voltage
    V BE(s at)∗ Base-Emitt er IC = 5 A IB = 1.25 A 1.2 V
    Saturation Voltage
    h F E∗ DC Current Gain IC = 6 A V CE = 5 V 5 10
    INDUCTIVE LO AD IC = 5 A IBon (END) =1 A
    ts Storage Time L B = 1 µH V BB = -2.5 V 2.5 3.5 µs
    tf Fall Time f = 64 KHz 0.3 0.45 µs
    ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

    Safe Operating Area Thermal Impedance

    2/6
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    ST2001HI

    Derating Curve DC Current Gain

    Collector Emitter Saturation Voltage Base Emitter Saturation Voltage

    Power Losses Switching Time Inductive Load

    3/6
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    ST2001HI

    RBSOA

    Inductive Load Switching Test Circuits.

    4/6
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    ST2001HI

    ISOWATT218 NARROW LEADS MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.
    A 5.35 5.65 0.211 0.222
    C 3.30 3.80 0.130 0.150
    D 2.90 3.10 0.114 0.122
    D1 1.88 2.08 0.074 0.082
    E 0.75 0.95 0.030 0.037
    F 0.75 0.95 0.030 0.037
    F2 1.50 1.70 0.059 0.067
    F3 1.90 2.10 0.075 0.083
    F5 1.10 0.043
    G 10.80 11.20 0.425 0.441
    H 15.80 16.20 0.622 0.638
    L 9 0.354
    L1 20.80 21.20 0.819 0.835
    L2 19.10 19.90 0.752 0.783
    L3 22.80 23.60 0.898 0.929
    L4 40.50 42.50 1.594 1.673
    L5 4.85 5.25 0.191 0.207
    L6 20.25 20.75 0.797 0.817
    N 2.1 2.3 0.083 0.091
    R 4.6 0.181
    DIA 3.5 3.7 0.138 0.146

    - Weight : 4.9 g (typ.)


    - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
    - The side of the dissipator must be flat within 80 µm P025C/B

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    ST2001HI

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
    granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
    subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
    are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
    The ST logo is a trademark of STMicroelectronics

     1999 STMicroelectronics – Printed in Italy – All Rights Reserved


    STMicroelectronics GROUP OF COMPANIES
    Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
    Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

    http://www.st.com
    .

    6/6

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