High Voltage Fast-Switching NPN Power Transistor: Applications TO-220

 BUL310
HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR
■ STMicroelectronics PREFERRED
SALESTYPE
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ FULLY CHARACTERISED AT 125oC 3
■ LARGE RBSOA 2
1
APPLICATIONS
■ ELECTRONIC BALLASTS FOR TO-220
FLUORESCENT LIGHTING
■ FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage INTERNAL SCHEMATIC DIAGRAM
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t
V CES Collector-Emitter Voltage (VBE = 0) 1000 V
V CEO Collector-Emitter Voltage (IB = 0) 500 V
V EBO Emitter-Base Voltage (IC = 0) 9 V
IC Collector Current 5 V
I CM Collector Peak Current (tp <5 ms) 10 A
IB Base Current 3 A
I BM Base Peak Current (t p <5 ms) 4 A
o
P t ot Total Dissipation at Tc = 25 C 75 W
o
T stg Storage T emperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
January 1999 1/6

BUL310
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-Case Max 1.65 C/W
o
R t hj- amb Thermal Resistance Junction-Ambient Max 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 1000 V 100 µA
Current (V BE = 0) V CE = 1000 V T j = 125 oC 500 µA
I CEO Collector Cut-off V EC = 400 V 250 µA
Current (I B = 0)
V CEO(sus) Collector-Emitter I C = 100 mA L= 25 mH 500 V
Sustaining Voltage
V EBO Emitter-Base Voltage I E = 10 mA 9 V
(I C = 0)
V CE(sat )∗ Collector-Emitter IC = 1 A IB = 0.2 A 0.5 V
Saturation Voltage IC = 2 A IB = 0.4 A 0.7 V
IC = 3 A IB = 0.6 A 1.1 V
V BE(s at)∗ Base-Emitt er IC = 1 A IB = 0.2 A 1 V
Saturation Voltage IC = 2 A IB = 0.4 A 1.1 V
IC = 3 A IB = 0.6 A 1.2 V
h F E∗ DC Current Gain I C = 10 mA VCE = 5 V 10
IC = 3 A VCE = 2.5 V 10
INDUCTIVE LO AD IC = 2 A IB1 = 0.4 A
ts Storage Time V BE(of f) = -5 V R BB = 0 Ω 1.2 1.9 µs
tf Fall Time V CL = 250 V L = 200 µH 80 160 ns
INDUCTIVE LO AD IC = 2 A IB1 = 0.4 A
ts Storage Time V BE(of f) = -5V R BB = 0 Ω 1.8 µs
tf Fall Time V CL = 250 V L = 200 µH 150 ns
o
T j = 125 C
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas Derating Curve
2/6
BUL310
DC Current Gain DC Current Gain
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
Inductive Fall Time Inductive Storage Time
3/6
BUL310
Reverse Biased SOA RBSOA and Inductive Load Switching Test

Circuit
(1) Fast electronic switch

(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
BUL310
TO-220 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
5/6
BUL310
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1998 STMicroelectronics – Printed in Italy – All Rights Reserved

STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://www.st.com
.
6/6
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.

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 BUL310

HIGH VOLTAGE FAST-SWITCHING

ABSOLUTE MAXIMUM RATINGS

January 1999 1/6

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Safe Operating Areas Derating Curve

DC Current Gain DC Current Gain

Collector Emitter Saturation Voltage Base Emitter Saturation Voltage

Inductive Fall Time Inductive Storage Time

Reverse Biased SOA RBSOA and Inductive Load Switching Test

(1) Fast electronic switch

TO-220 MECHANICAL DATA

 1998 STMicroelectronics – Printed in Italy – All Rights Reserved

Datasheets for electronics components.

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